CN102361035A - Structure of RF-LDMOS (radio frequency laterally double-diffused metal oxide semiconductor) device without epitaxial layer - Google Patents
Structure of RF-LDMOS (radio frequency laterally double-diffused metal oxide semiconductor) device without epitaxial layer Download PDFInfo
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- CN102361035A CN102361035A CN2011103222861A CN201110322286A CN102361035A CN 102361035 A CN102361035 A CN 102361035A CN 2011103222861 A CN2011103222861 A CN 2011103222861A CN 201110322286 A CN201110322286 A CN 201110322286A CN 102361035 A CN102361035 A CN 102361035A
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Abstract
The invention discloses a structure of RF-LDMOS (radio frequency laterally double-diffused metal oxide semiconductor) device without an epitaxial layer, which comprises a source electrode, a drain electrode and a substrate. The source electrode is connected with the drain electrode through a channel, a grid is arranged above the channel, the grid and the channel are partitioned by an oxide layer, the oxide layer and the grid are covered by an insulating layer, a field plate is arranged outside the insulating layer, the source electrode and the drain electrode are connected with a source metallic lead and a drain metallic lead respectively, and the substrate is made of low-impurity high-resistance semiconductor materials. The RF-LDMOS device needs no epitaxial layer, so that the process for the epitaxial layer is omitted, and cost of the device is reduced. Since the substrate is not used as a conductive passage any more, the substrate can be made of low-impurity high-resistance materials, capacitance of an anti-deviation PN junction of the drain electrode and the substrate can be reduced, parasitic capacitance from the metallic leads to the substrate is reduced, loss caused by vortex current of the substrate generated by alternating current in the metallic leads is reduced, and efficiency of the device is improved.
Description
Technical field
The present invention relates to a kind of RF-LDMOS device architecture, be specifically related to a kind of RF-LDMOS device architecture that does not have epitaxial loayer, belong to technical field of semiconductors.
Background technology
RF-LDMOS (lateral double-diffused metal-oxide semiconductor, LDMOS) can realize high-gain and high puncture voltage, is widely used in the power amplifier of radio frequency, microwave regime.The substrate of RF-LDMOS is usually as conductive layer, and the source end is drawn from the metal backing at the back side through substrate.Usually use highly doped substrate, can realize high conductivity, thereby reduce the connection resistances of source end, improve device gain.But highly doped substrate also can bring corresponding problem simultaneously, and at first, highly doped substrate can reduce the drain electrode of RF-LDMOS and the puncture voltage of substrate; Secondly, be difficult to make the N trap above the highly doped substrate; Once more, for the RF-LDMOS power device, in order to provide high-power, normally a lot of interdigital parallel connections need non-constant width and very long metal wire to connect together them like this.Adopt traditional highly doped substrate, can bring very big parasitic capacitance.Therefore take the certain thickness low-doped epitaxial loayer 3 of deposition one deck on highly doped substrate 2 in the prior art usually, as shown in Figure 1, still, introduce the cost of manufacture that epitaxial loayer has improved RF-LDMOS technology.
Summary of the invention
Technical problem to be solved by this invention is to overcome defective of the prior art, and a kind of RF-LDMOS device architecture that does not have epitaxial loayer is provided, and is easy to technology and realizes, reduces the device production cost; Can adopt simultaneously the substrate of low-doped highly resistant material, improve the efficient of device.
For solving the problems of the technologies described above, the present invention adopts following technical scheme:
A kind of RF-LDMOS device architecture that does not have epitaxial loayer comprises source electrode, drain electrode, and source electrode connects together through raceway groove with drain electrode; Be provided with grid above the raceway groove, across layer of oxide layer, oxide layer and grid are covered by insulating barrier between grid and raceway groove; Insulating barrier also is provided with field plate outward; Source electrode is connected with the leakage metal lead wire with the source metal lead wire respectively with drain electrode, it is characterized in that, also comprises the substrate of the low-doped high-resistance semi-conductor material of an employing.Substrate also can adopt insulating material, and said source electrode, drain electrode directly are formed at a side of said substrate.
The semi-conducting material resistivity of low-doped high resistant is generally 10-100 Ω cm, and the semi-conducting material resistivity of highly doped low-resistance is generally 0.005-0.05 Ω cm, and doping content is different because of material different.
Also comprise one be formed at said substrate opposite side metal backing.
Said source electrode is drawn from said metal backing.
Said substrate is provided with through hole, and said source electrode passes said through hole and is connected with said metal backing.
Said source electrode and metal backing are partly led a material or metal material is connected by heavily doped.
Said metal material is tungsten or other high conductivity metal.
Said source electrode is drawn through the metal connecting line of establishing above the said substrate as an independent exit.
Said source electrode is drawn above said substrate through bonding line or flip chip bonding.
Said substrate is provided with N trap or P trap.
The beneficial effect that the present invention reached:
1, RF-LDMOS device of the present invention need not use epitaxial loayer, has reduced this road technology of epitaxial loayer, has reduced device cost.
2, substrate no longer is as conductive path; Therefore can use substrate low-doped, highly resistant material; The high resistant substrate can bring following benefit: at first, the high resistant substrate anti-junction capacitance of PN junction partially with substrate that can reduce to drain, this is because doping content is low more; Width of depletion region is big more, and capacitance is more little so.The electric capacity that reduces drain terminal can improve the efficient of RF-LDMOS.Secondly, adopt low-doped substrate can reduce the parasitic capacitance of substrate, the efficient of raising device.The equivalent electric circuit of substrate can be thought a R, C parallel network under the situation less than 10GHz.When substrate doping is high, can think a resistance.When substrate doping is low, can think an electric capacity.Two capacitances in series have reduced the parasitic capacitance of metal connecting line to substrate.Once more, adopt the high resistant substrate can reduce the loss that causes because of vortex current, improve the efficient of device.
Description of drawings
Fig. 1 is a prior art RF-LDMOS device architecture generalized section;
Fig. 2 is the generalized section of a preferred embodiment of the RF-LDMOS device architecture of no epitaxial loayer of the present invention;
Fig. 3 is the generalized section of another preferred embodiment of the RF-LDMOS device architecture of no epitaxial loayer of the present invention;
Among the figure,
1, metal backing, 2, substrate, 3, epitaxial loayer, 4, tungsten, 5, the drift region, 6, drain electrode, 7, the source region, 8, source electrode, 9, raceway groove, 10, oxide layer, 11, field plate, 12, leak metal lead wire, 13, the source metal lead wire, 14, grid, 15, the N trap, 16, insulating barrier.
Embodiment
Below in conjunction with accompanying drawing the present invention is further described.Following examples only are used for technical scheme of the present invention more clearly is described, and can not limit protection scope of the present invention with this.
Embodiment 1
As shown in Figure 2, the present invention is that example is introduced with the RF-LDMOS device architecture of N type, and corresponding P type RF-LDMOS device architecture can be derived according to present embodiment.
The RF-LDMOS device architecture of N type of the present invention comprises: directly be formed at heavily doped source electrode 8 of N type and the heavily doped drain electrode 6 of N type on the substrate 2.Source electrode 8 and drain electrode 6 connect together through raceway groove 9.Be provided with grid 14 above the raceway groove 9, its interval layer of oxide layer 10.Drain electrode 6 is made up of contact hole and one section drift region 5 of leaking.Substrate 2 below the drain electrode 6 is provided with N trap 15, and N trap 15 can reduce conducting resistance.
What is connected with drain electrode 6 with source electrode 8 is respectively source metal lead wire 13 and leakage metal lead wire 12.
The heavily doped source region 7 of P type below the source metal lead wire 13 is to be used for and its formation good Ohmic contact.
The lead-out mode of source electrode 8 adopts source electrode 8 is connected with substrate back metal backing 1 in the present embodiment; The mode that source electrode 8 is drawn by metal backing 1 is provided with through hole on substrate 2, through hole and the metal backing 1 at substrate 2 back sides that source electrode 8 ends are passed on the substrate 2 link together; Source electrode 8 is drawn by metal backing 1; Source electrode 8 directly is connected by tungsten 4 with the metal backing 1 at substrate 2 back sides, and in other embodiments, tungsten 4 also can adopt other heavily doped P types or metal to form.
Substrate adopts low-doped highly resistant material in the present embodiment.Substrate 2 no longer is as electric conducting material, therefore can use low-doped highly resistant material as substrate, has avoided the extra epitaxial loayer of needs because use the highly doped substrate of low-resistance.The use of high resistant substrate can reduce the loss of parasitic capacitance and line simultaneously, improves the efficient of device.Compare with traditional structure and can realize low source end series inductance and low series resistance equally, can when output is powerful, can guarantee high gain and efficient equally like this.This structure needing to be very suitable for the powerful application of output, as is used for the power amplifier of base station or radar.
As shown in Figure 3, present embodiment provides the lead-out mode of another kind of source electrode 8, and is different with source electrode 8 lead-out modes of embodiment 1 and Fig. 2; Source electrode 8 no longer is to draw through the metal backing 1 at substrate 2 back sides, but with source electrode 8 as an independent exit, through methods such as bonding line or flip chip bondings; Above silicon chip, draw; Source metal lead wire 13 through above the substrate 2 is drawn, and has cancelled metal backing 1, and all the other structures are identical with embodiment 1.
The low-doped highly resistant material of substrate 2 same employings has been avoided the use of epitaxial loayer in the present embodiment.
Adopt this infrastructure cost of present embodiment very low; But source electrode 8 drawn usually above substrate 2 can bring bigger stray inductance; Inductance value about 1nH, adopts many technology with the line parallel connection can reduce series inductance usually, and the series inductance value can drop to 0.1-0.5nH.Work as g
mω L>>Can seriously reduce gain in the time of 1, thereby influence its efficient.Wherein, g
mBe the mutual conductance of RF-LDMOS, ω=2 π f, f is the frequency of device work, L is the inductance value of series connection.Big series inductance has limited the mutual conductance g of RF-LDMOS
mThereby, limited the size of pipe.Therefore this structure is highly suitable for exporting the situation of lower-wattage, as is used for mobile terminal device such as mobile phone.
The above only is a preferred implementation of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from know-why of the present invention; Can also make some improvement and distortion, these improvement and distortion also should be regarded as protection scope of the present invention.
Claims (9)
1. a RF-LDMOS device architecture that does not have epitaxial loayer comprises source electrode, drain electrode, and source electrode connects together through raceway groove with drain electrode; Be provided with grid above the raceway groove, across layer of oxide layer, oxide layer and grid are covered by insulating barrier between grid and raceway groove; Insulating barrier also is provided with field plate outward; Source electrode is connected with the leakage metal lead wire with the source metal lead wire respectively with drain electrode, it is characterized in that, also comprises the substrate of the low-doped high-resistance semi-conductor material of an employing.
2. a kind of RF-LDMOS device architecture that does not have epitaxial loayer according to claim 1 is characterized in that, also comprise one be formed at said substrate opposite side metal backing.
3. a kind of RF-LDMOS device architecture that does not have epitaxial loayer according to claim 2 is characterized in that said source electrode is drawn from said metal backing.
4. according to claim 2 or 3 described a kind of RF-LDMOS device architectures that do not have epitaxial loayer, it is characterized in that said substrate is provided with through hole, said source electrode passes said through hole and is connected with said metal backing.
5. a kind of RF-LDMOS device architecture that does not have epitaxial loayer according to claim 4 is characterized in that said source electrode is connected by heavily doped semi-conducting material or metal material with metal backing.
6. a kind of RF-LDMOS device architecture that does not have epitaxial loayer according to claim 5 is characterized in that said metal material is tungsten or other high conductivity metal.
7. a kind of RF-LDMOS device architecture that does not have epitaxial loayer according to claim 1 is characterized in that said source electrode is drawn through the metal connecting line of establishing above the said substrate as an independent exit.
8. a kind of RF-LDMOS device architecture that does not have epitaxial loayer according to claim 7 is characterized in that said source electrode is drawn above said substrate through bonding line or flip chip bonding.
9. a kind of RF-LDMOS device architecture that does not have epitaxial loayer according to claim 1 is characterized in that said substrate is provided with N trap or P trap.
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| CN2011103222861A CN102361035A (en) | 2011-10-21 | 2011-10-21 | Structure of RF-LDMOS (radio frequency laterally double-diffused metal oxide semiconductor) device without epitaxial layer |
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| CN2011103222861A CN102361035A (en) | 2011-10-21 | 2011-10-21 | Structure of RF-LDMOS (radio frequency laterally double-diffused metal oxide semiconductor) device without epitaxial layer |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102790088A (en) * | 2012-07-20 | 2012-11-21 | 昆山华太电子技术有限公司 | Breakdown voltage-adjustable RF-LDMOS device |
| CN103855209A (en) * | 2012-11-28 | 2014-06-11 | 北大方正集团有限公司 | High-side lateral double diffused metal oxide semiconductor device and manufacturing method thereof |
| CN104183632A (en) * | 2014-08-13 | 2014-12-03 | 昆山华太电子技术有限公司 | RF-LDMOS (radio frequency laterally diffused metal oxide semiconductor) self-alignment drain terminal field plate structure and fabrication method thereof |
| CN107611031A (en) * | 2017-08-15 | 2018-01-19 | 上海华虹宏力半导体制造有限公司 | Improve the method for faraday's loop resistance |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102790088A (en) * | 2012-07-20 | 2012-11-21 | 昆山华太电子技术有限公司 | Breakdown voltage-adjustable RF-LDMOS device |
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| CN104183632A (en) * | 2014-08-13 | 2014-12-03 | 昆山华太电子技术有限公司 | RF-LDMOS (radio frequency laterally diffused metal oxide semiconductor) self-alignment drain terminal field plate structure and fabrication method thereof |
| CN104183632B (en) * | 2014-08-13 | 2017-08-29 | 昆山华太电子技术有限公司 | The self aligned drain terminal field plate structures of RF LDMOS and preparation method |
| CN107611031A (en) * | 2017-08-15 | 2018-01-19 | 上海华虹宏力半导体制造有限公司 | Improve the method for faraday's loop resistance |
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Application publication date: 20120222 |