CN102315164A - Method for improving performance of RF-LDMOS (Radio Frequency-Laterally Diffused Metal Oxide Semiconductor) device and integrated circuit thereof - Google Patents
Method for improving performance of RF-LDMOS (Radio Frequency-Laterally Diffused Metal Oxide Semiconductor) device and integrated circuit thereof Download PDFInfo
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- CN102315164A CN102315164A CN201110322256A CN201110322256A CN102315164A CN 102315164 A CN102315164 A CN 102315164A CN 201110322256 A CN201110322256 A CN 201110322256A CN 201110322256 A CN201110322256 A CN 201110322256A CN 102315164 A CN102315164 A CN 102315164A
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Abstract
The invention discloses a method for improving the performance of an RF-LDMOS (Radio Frequency-Laterally Diffused Metal Oxide Semiconductor) device and an integrated circuit thereof, which comprises the following steps of: manufacturing the RF-LDMOS device and a substrate in the integrated circuit based on an RF-LDMOS process by adopting a TSV (Through Silicon Vias) process method, and carving a deep slot which does not penetrate through the substrate on the substrate; filling a conducting material into the deep slot; and thinning the substrate until the deep slot penetrates through the substrate. In the invention, the source end of the RF-LDMOS substrate can be connected with a conducting backplate on the back surface of the substrate by a TSV method by adopting a low-doped high-resistance material. Not only can the performance of the RF-LDMOS device be improved, but also the performance of a passive device contained in the integrated circuit based on an RF-LDMOS can be improved; as for capacitance, the parasitic capacitance from a metal connecting wire to the substrate can be reduced by adopting a high-resistance substrate; and as for inductance, the parasitic capacitance can be reduced by adopting the high-resistance substrate, and the self-resonance frequency and the quality factor are improved.
Description
Technical field
The present invention relates to the method for a kind of RF-LDMOS of raising device and performance of integrated circuits thereof, relate in particular to a kind of method that improves RF-LDMOS device and performance of integrated circuits thereof based on TSV (Through Silicon Via passes the silicon chip passage) technology.
Background technology
RF-LDMOS (lateral double-diffused metal-oxide semiconductor, LDMOS) is widely used in the power amplifier of radio frequency, microwave regime.Wherein, The integrated circuit of employing RF-LDMOS can be realized the coupling of 50 ohm of input and output in sheet; Also can realize multistage amplifier easily, and not need discrete inductance and electric capacity or on pcb board, make transmission line to realize mating, can greatly reduce cost.
But most at present RF-LDMOS power amplifiers all is based on discrete device.Main cause is that the source electrode of main flow RF-LDMOS chip is in the market drawn from substrate back; The purpose of doing like this is for fear of using source end needed bonding line when draw on the surface; And bonding line can be introduced source end inductance; The scheme that adopts is to utilize highly doped substrate as conductive layer, source end and substrate back metal is connected together, thereby can draw source electrode from back metal.But the problem that this scheme is brought is, though highly doped substrate has very high conductivity, but can introduce the source electrode connection resistances; In addition; Because substrate doping is higher, leakage and substrate are anti-, and the junction capacitance of PN junction can be bigger partially, and this two aspect all can reduce the efficient of RF-LDMOS device.
Based on the integrated circuit of RF-LDMOS, except the needs transistor, also need some passive devices, realize the separated straight of impedance matching and input and output like inductance, electric capacity.For electric capacity, no matter be metal-insulator medium-metal (MIM) electric capacity or Metal-oxide-semicondutor (MOS) electric capacity, hope that all its parasitic capacitance to substrate is more little good more, high parasitic capacitance can cause the loss of signal.For inductance, its self-resonant frequency depends on inductance value and parasitic capacitance.Parasitic capacitance is big more, and self-resonant frequency is low more.Use is generally all lower based on the quality factor of the passive device that existing RF-LDMOS technology highly doped, the high conductivity substrat structure is made, and self-resonant frequency is also lower.
Therefore, existing structure has seriously restricted the performance based on the device and the integrated circuit thereof of RF-LDMOS technology.
Summary of the invention
Technical problem to be solved by this invention is to overcome defective of the prior art; The method of a kind of RF-LDMOS of raising device and performance of integrated circuits thereof is provided; Not only can improve the performance of RF-LDMOS device, equally also can improve the performance of the passive device that comprises in the integrated circuit based on RF-LDMOS.
For solving the problems of the technologies described above the technical scheme that employing of the present invention is following:
A kind of method that improves RF-LDMOS device and performance of integrated circuits thereof; It is characterized in that; Adopt TSV (Through Silicon Via wears the silicon through hole) process to make the RF-LDMOS device and reach based on the substrate in the integrated circuit of RF-LDMOS technology, TSV process step comprises:
A, on substrate, carve a deep trouth that does not run through said substrate;
B, in said deep trouth, insert electric conducting material;
C, to substrate carry out attenuate until said deep trouth through said substrate.
Also be included in the processing step on additional one deck barrier layer on the said deep trouth inwall.
The back side that also is included in substrate is provided with the processing step of metal backing.
The depth-to-width ratio of said deep trouth is 10:1.
The width of said deep trouth is between 6-10 μ m.
Said electric conducting material is a metal material.
Said electric conducting material is a tungsten.
Said substrate adopts low-doped high-resistance semi-conductor material.
Said substrate adopts insulating material.
The beneficial effect that the present invention reached:
The present invention can adopt low-doped highly resistant material through TSV method RF-LDMOS substrate, and the conductive backings of source end and substrate back is connected, and replaces traditional highly doped substrate and as conductive layer the source end is drawn by the electric conducting material at the back side.Not only can improve the performance of RF-LDMOS device, equally also can improve the performance of the passive device that comprises in the integrated circuit based on RF-LDMOS, as improving the quality factor and the self-resonant frequency of inductance, electric capacity.
1, electric conducting material metal normally in the TSV method, the conductivity of metal can reduce the source region connection resistances far above heavily doped substrate;
2, the high resistant substrate can reduce drain region and the anti-junction capacitance of PN junction partially of substrate, and this is that width of depletion region is big more because doping content is low more, and capacitance is more little, reduces the efficient that drain terminal electric capacity has improved the RF-LDMOS pipe;
3, RF-LDMOS is a power device, and the power of a generation part is through load output, and another part power is turned round by autophage and changed into heat, need shed heat as early as possible since the thermal conductivity of metal the thermal conductivity than silicon is much high usually.Employing can improve radiating efficiency based on the TSV technology of metal material, reduces the temperature of device work;
4,,, adopt the high resistant substrate can reduce the parasitic capacitance of metal connecting line to substrate for electric capacity to based on the passive device in the integrated circuit of RF-LDMOS; For inductance, adopt the high resistant substrate can reduce parasitic capacitance, improve self-resonant frequency, can also improve the quality factor q value of inductance;
5, can produce magnetic field through alternating current in the metal connecting line, this magnetic field can produce AC field at substrate, and this electric field can produce vortex current at substrate; The conductivity of substrate is high more, and eddy current is big more, and the loss of generation is also big more; Adopt the high resistant substrate can lower the loss that causes because of vortex current.
Description of drawings
Fig. 1 the present invention adopts the TSV process to make the schematic flow sheet of RF-LDMOS substrate;
Fig. 2 is the generalized section of a preferred version of the RF-LDMOS device architecture of employing of the present invention TSV method;
Fig. 3 is the profile that adopts inductance in the TSV method RF-LDMOS integrated circuit;
Fig. 4 is the profile of inductance in traditional RF-LDMOS integrated circuit;
Fig. 5 is the induction quality factor Q analogous diagram to Fig. 3, Fig. 4 substrat structure;
Among the figure,
1, metal backing, 2, substrate, 3, epitaxial loayer, 4, tungsten, 5, the drift region, 6, drain electrode; 7, source region, 8, source electrode, 9, raceway groove, 10, oxide layer, 11, field plate, 12, leak metal lead wire; 13, source metal lead wire, 14, grid, 15, the N trap, 16, insulating barrier, A, deep trouth, B, substrate; C, barrier layer, D, electric conducting material, E, metal backing, 4a, dielectric layer, 5a, heavily doped P type substrate.
Embodiment
Below in conjunction with accompanying drawing the present invention is further described.Following examples only are used for technical scheme of the present invention more clearly is described, and can not limit protection scope of the present invention with this.
Embodiment 1
As shown in Figure 1, the method for raising RF-LDMOS device of the present invention and performance of integrated circuits thereof is to adopt the TSV process to make the RF-LDMOS device substrate.
TSV process concrete steps comprise:
A, on substrate B, carve a deep trouth A, this deep trouth A does not carve and wears entire substrate B.As a kind of preferred version, the depth-to-width ratio of this deep trouth A is 10:1, and its width is between 6-10 μ m.Can realize bigger source end.The source end bigger for common CMOS technology can take a large amount of areas, but for the RF-LDMOS that is used to provide high-power output, larger area source end can make its heat-sinking capability better.
B, in deep trouth A, insert electric conducting material D, electric conducting material is metal material normally; As a kind of preferred version, electric conducting material D selects tungsten.
C, for the electric conducting material D that prevents to add in the deep trouth A gets among the substrate B, on this deep trouth A inwall, can add one deck barrier layer C.
D, accomplish other processing steps being carved with on the substrate B of deep trouth A according to the common process flow process; Promptly accomplishing substrate B goes up such as source region, the isostructural processing step in drain region.
E, to substrate B carry out attenuate until above-mentioned deep trouth A through entire substrate, electric conducting material D exposes from the substrate another side.
F, carry on the back gold process, metal backing E is set at the back side of substrate B.
RF-LDMOS device architecture as shown in Figure 2, as to be to have adopted the TSV method to make is that example describes with the RF-LDMOS device architecture of N type, and corresponding P type RF-LDMOS device architecture can be derived according to present embodiment.
The RF-LDMOS device architecture of N type comprises: directly be formed at heavily doped source electrode 8 of N type and the heavily doped drain electrode 6 of N type on the substrate 2.Source electrode 8 and drain electrode 6 connect together through raceway groove 9.Be provided with grid 14 above the raceway groove 9, its interval layer of oxide layer 10.Drain electrode 6 is made up of contact hole and one section drift region 5 of leaking.Substrate 2 below the drain electrode 6 is provided with N trap 15.
What is connected with drain electrode 6 with source electrode 8 is respectively source metal lead wire 13 and leakage metal lead wire 12.
Be provided with the heavily doped source region 7 of P type below the source metal lead wire 13.
Tungsten 4 is used for connecting metal backing 1 and source electrode 8, and in other embodiments, tungsten 4 also can adopt other metals to replace.Substrate adopts the semi-conducting material of high resistant.
For the performance that adopts the TSV method to improve passive device in the RF-LDMOS integrated circuit is described; Present embodiment realizes that to adopt the TSV method substrat structure of inductance in the RF-LDMOS integrated circuit is shown in Figure 3 for for example; And, can find out that through Fig. 5 simulation result this method has improved inductance self-resonant frequency and quality factor q value through carrying out the emulation contrast with the substrat structure of traditional LDMOS such as the inductance of Fig. 4.
As shown in Figure 3, the high resistant substrate layer of substrate 2 for adopting the TSV method to realize, dielectric layer 4a is connected with metal backing 1 through substrate 2.
As shown in Figure 4, the inductance of the substrat structure of traditional LDMOS, metal backing 1 is connected with dielectric layer 4a through the epitaxial loayer 3 of heavily doped P type substrate 5a, high resistant.
On two kinds of different substrat structures, carry out emulation with the Momentum of EM simulation software.The data that adopt during emulation are following: the conductivity of heavily doped P type substrate 5a is 10
4S/m, thickness are 90 μ m, and the conductivity of epitaxial loayer 3 is 1S/m, and thickness is 8 μ m, and dielectric layer 4a is an insulating barrier, and conductivity is 0, and its thickness is 6.3 μ m.What substrate 2 adopted is the silicon substrate of high resistant, and its conductivity is the same with the conductivity of epitaxial loayer 3, is 1S/m, and thickness is the thickness sum 98 μ m of heavily doped P type substrate 5a and epitaxial loayer 3.
The result of emulation is as shown in Figure 5, and dotted line is quality factor and the frequency simulation curve after employing this method, and solid line is traditional structure quality factor and frequency simulation curve.The inductance value of inductance under the situation of different substrates all is 1.2nH under the situation of low frequency.Adopted after the silicon substrate of high resistant, the quality factor q value of inductance has improved.The highest Q value of inductance brings up to 27 from 22, has improved 22%.If the operating frequency of inductance is with Q>15 as criterion, the operating frequency of inductance is 0.7GHz-2.8GHz under traditional substrate, and has adopted the substrat structure after the TSV method, the operating frequency of inductance is 0.8GHz-8GHz.Adopt the high resistant substrate to reduce the parasitic capacitance of inductance to substrate, inductance can be operated in wideer frequency range.
The above only is a preferred implementation of the present invention; Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from know-why of the present invention; Can also make some improvement and distortion, these improvement and distortion also should be regarded as protection scope of the present invention.
Claims (9)
1. a method that improves RF-LDMOS device and performance of integrated circuits thereof is characterized in that, adopts the TSV process to make the RF-LDMOS device and reaches based on the substrate in the integrated circuit of RF-LDMOS technology, and TSV process step comprises:
A, on substrate, carve a deep trouth that does not run through said substrate;
B, in said deep trouth, insert electric conducting material;
C, to substrate carry out attenuate until said deep trouth through said substrate.
2. a kind of method that improves RF-LDMOS device and performance of integrated circuits thereof according to claim 1 is characterized in that, also is included in the processing step on additional one deck barrier layer on the said deep trouth inwall.
3. a kind of method that improves RF-LDMOS device and performance of integrated circuits thereof according to claim 1 and 2 is characterized in that the back side that also is included in substrate is provided with the processing step of metal backing.
4. a kind of method that improves RF-LDMOS device and performance of integrated circuits thereof according to claim 1 is characterized in that the depth-to-width ratio of said deep trouth is 10:1.
5. according to claim 1 or 4 described a kind of methods that improve RF-LDMOS device and performance of integrated circuits thereof, it is characterized in that the width of said deep trouth is between 6-10 μ m.
6. a kind of method that improves RF-LDMOS device and performance of integrated circuits thereof according to claim 1 is characterized in that said electric conducting material is a metal material.
7. according to claim 1 or 6 described a kind of methods that improve RF-LDMOS device and performance of integrated circuits thereof, it is characterized in that said electric conducting material is a tungsten.
8. a kind of method that improves RF-LDMOS device and performance of integrated circuits thereof according to claim 1 is characterized in that, said substrate adopts low-doped high-resistance semi-conductor material.
9. according to claim 1 or 8 described a kind of methods that improve RF-LDMOS device and performance of integrated circuits thereof, it is characterized in that said substrate adopts insulating material.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820286A (en) * | 2012-07-16 | 2012-12-12 | 昆山华太电子技术有限公司 | Structure for improving performance of passive device of power integrated circuit |
| CN104183632A (en) * | 2014-08-13 | 2014-12-03 | 昆山华太电子技术有限公司 | RF-LDMOS (radio frequency laterally diffused metal oxide semiconductor) self-alignment drain terminal field plate structure and fabrication method thereof |
| CN104183499A (en) * | 2014-08-13 | 2014-12-03 | 武汉新芯集成电路制造有限公司 | Semiconductor device and preparation method thereof |
| CN104392993A (en) * | 2014-12-08 | 2015-03-04 | 江苏博普电子科技有限责任公司 | High-resistance silicon substrate based LDMOS MMIC chip |
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| CN101582407A (en) * | 2008-05-14 | 2009-11-18 | 台湾积体电路制造股份有限公司 | System, structure and method of manufacturing semiconductor substrate stack |
| US20100314758A1 (en) * | 2009-06-12 | 2010-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-silicon via structure and a process for forming the same |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101582407A (en) * | 2008-05-14 | 2009-11-18 | 台湾积体电路制造股份有限公司 | System, structure and method of manufacturing semiconductor substrate stack |
| US20100314758A1 (en) * | 2009-06-12 | 2010-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Through-silicon via structure and a process for forming the same |
| CN101924096A (en) * | 2009-06-12 | 2010-12-22 | 台湾积体电路制造股份有限公司 | Through-silicon via structure and formation technology thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820286A (en) * | 2012-07-16 | 2012-12-12 | 昆山华太电子技术有限公司 | Structure for improving performance of passive device of power integrated circuit |
| CN104183632A (en) * | 2014-08-13 | 2014-12-03 | 昆山华太电子技术有限公司 | RF-LDMOS (radio frequency laterally diffused metal oxide semiconductor) self-alignment drain terminal field plate structure and fabrication method thereof |
| CN104183499A (en) * | 2014-08-13 | 2014-12-03 | 武汉新芯集成电路制造有限公司 | Semiconductor device and preparation method thereof |
| CN104183499B (en) * | 2014-08-13 | 2017-06-16 | 武汉新芯集成电路制造有限公司 | Semiconductor devices and preparation method thereof |
| CN104183632B (en) * | 2014-08-13 | 2017-08-29 | 昆山华太电子技术有限公司 | The self aligned drain terminal field plate structures of RF LDMOS and preparation method |
| CN104392993A (en) * | 2014-12-08 | 2015-03-04 | 江苏博普电子科技有限责任公司 | High-resistance silicon substrate based LDMOS MMIC chip |
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Application publication date: 20120111 |