CN102361013A - 一种适用于晶圆级倒装芯片的金凸点制作方法 - Google Patents
一种适用于晶圆级倒装芯片的金凸点制作方法 Download PDFInfo
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Abstract
本发明公开一种晶圆级倒装芯片的金凸点制作方法，直接利用金纳米颗粒溶液通过模具压印的方法制备倒装芯片的金凸点，将金纳米颗粒有机溶液涂覆在晶圆片上，然后利用制备好的模具与晶圆片精确对齐，在一定的条件下，给模具以压力使得溶胶在模具空腔内完全填充，蒸发溶液再冷却脱模，加温使分散的金纳米颗粒熔融固化成连续金凸点。模具的图形部分由空腔和突出部分组成，空腔形状即为凸点形状，且与晶圆片上凸点分布一致，本方法利用金纳米颗粒溶液的粘度小，通过模具压印实现其流动，并且在低温低压下就可以熔化凝结成连续的块金。通过机械的方式在晶圆上实现凸点的生成，工艺简单，无高温过程，应力小，可靠性高，凸点形状可灵活控制。
Description
技术领域
本发明涉及晶圆级芯片封装技术，尤其涉及一种适用于晶圆级倒装芯片的金凸点制作方法。
背景技术
电子封装的发展趋势是体积更小、重量更轻，倒装芯片技术正是为了顺应这一发展趋势而产生的。与传统的引线连接和载带连接相比，倒装芯片技术具有封装密度高，电和热性能优良，可靠性好，成本低等优势。倒装芯片技术是将芯片直接倒扣在基板上，基板和芯片的焊盘成镜像对称，中间通过焊点相连，实现电气和机械连接，有时还包括热连接等。因此凸点制成是一个关键工序。
常见倒装芯片的凸点制作技术有引线键合法、电镀法、模板印刷法、蒸发法、Tachy-dots粘点转移法和SB2-Jet等方法。其中引线键合法使用标准线连接形成凸点，钎料丝的选择要求与UBM要匹配；电镀法可以实现较小的凸点间距，缺点是比较费时，而且对焊料有选择；模板印刷法通过涂刷器和模板将钎料涂刷在焊盘上，可以实现同时印刷数以千记的凸点，工艺简单，操作方便适用于各种焊料，但是在小间距凸点制作中受到限制；蒸发法采用金属掩模或光刻胶来形成凸点，凸点的高度取决于蒸发钎料量、掩模高度及其开口尺寸；Tachy-dots粘点转移法是有TI和DuPont联合开发的一项专利技术，利用紫外线曝光光敏粘性薄膜使其失去粘性，而在特定位置被遮挡保持了粘性，用它粘上钎料球，然后与芯片上的焊垫对齐通过再回流实现钎料球转移。
发明内容
本发明的目的在于针对现有技术的不足，提供一种适用于晶圆级倒转芯片的金凸点的制备方法，具有工艺简单、可大批量生产和灵活可靠的优点。
本发明的目的是通过以下技术方案来实现的：
一种适用于晶圆级倒装芯片的金凸点制作方法，其特征在于，包括以下步骤：
A、在经过初步加工的晶圆片上制备黏附层、扩散阻挡层和润湿层；
B、按要求制备压印模具；
C、在晶圆片上涂覆金纳米颗粒有机溶液；
D、把模具与晶圆片精确对齐，挤压溶液使其填满模具空腔；
E、蒸发溶液，然后冷却脱模；
F、加热分散的金纳米颗粒，使颗粒熔化形成固态连续的金凸点；
G、除去凸点外的下金属层，保证凸点之间的电气绝缘。
其中，步骤A所述制备黏附层、扩散阻挡层和润湿层的方法为真空溅射沉积、电镀中的一种。
其中，步骤B所述的按要求压制模具为，所制模具空腔应与晶圆片上待制凸点的形状及分布一致。
其中，步骤D所述挤压溶液使其填满模具空腔能在低温、低压下进行，具体为低温80℃，低压＜40Kpa。
其中，步骤F所述加热分散的金纳米颗粒，其温度根据金纳米颗粒的尺寸决定，选定的金纳米颗粒尺寸在2nm～10nm之间，则相应需要加热的温度将是130℃～940℃之间。
其中，步骤G所述除去凸点外的下金属层，为化学腐蚀法逐层去除、光刻刻蚀中的一种。
本发明的有益效果为：本发明的方法具有可批量生产，无高温过程的优点，由于使用的原料是金纳米颗粒，所以凸点的参数可以自由设定，甚至在同一晶圆上制备不同形状和大小的凸点，而且金纳米颗粒的熔点与体金的熔点完全不同，所以可以在低温下制成金凸点，适合于某些特殊器件的封装。同时制成的模具可以清洗后重复使用，降低成本。
附图说明
下面根据附图和实施例对本发明作进一步详细说明。
图1是经过初步加工过的晶圆级芯片的局部侧视图。
图2是淀积下金属层后的芯片侧视图。
图3是涂覆一定量的金纳米颗粒有机溶液之后的芯片侧视图。
图4是模具与芯片精确对齐的示意图。
图5是对齐后挤压溶液而使其填满模腔的示意图。
图6是金纳米颗粒熔化后形成连续块金的示意图。
图7是凸点以外下金属层除去后的芯片侧视图。
图中：10、晶圆片；11、硅衬底；12、电极片；13、钝化层；20、黏附层；21、扩散阻挡层；22、润湿层；23、金纳米颗粒有机溶液；24、金纳米颗粒；30、模具；30、金凸点。
具体实施方式
如图1～7所示，本发明所述的一种适用于晶圆级倒装芯片的金凸点制作方法为：经过初步加工的晶圆片10，包括硅衬底11、电极片12和钝化层13。电极片12上要制作相应的金凸点31实现芯片与外界的电气、机械甚至是热互连。金凸点31与电极片12之间设有黏附层20和扩散阻挡层21。在制作之前首先清洗晶圆片10，保证裸露的金属电极片12表面洁净，不会有氧化物出现。利用真空溅射、淀积或电镀的方法分别制作黏附层20、扩散阻挡层21和润湿层22，黏附层20要求具有足够的黏附强度，低机械应力和低接触电阻等性能，膨胀系数也要求接近，使用的材料为Cr、Ti、TiW或Al中的一种，厚度约为100nm；扩散阻挡层21使用的材料为Ti、Ni或TiW中的一种，厚度约为100nm。
接下来制作金凸点31，使用金纳米颗粒有机溶液23作为凸点原料，将金纳米有机溶液23涂覆在晶圆片10上，将按照要求制备完成的模具30与晶圆片10上的焊点精确对齐，然后挤压金纳米颗粒有机溶液23。在这种溶液里金纳米颗粒24悬浮在其中，由于溶液的粘性系数较低，最终会被挤压进入模具30的空腔里实现完全填充，因此可以实现高质量无残留的压印成型，并且压印成型过程能够在低压(＜40kPa)、低温(80℃)下完成。
当溶剂蒸发以后，进行冷却脱模，脱模后将结构加温至140℃，并保持十分钟，使分散、孤立的金纳米颗粒24熔化形成连续的金导体，这种金导体就是所要制作的金凸点31。最后利用化学腐蚀法逐层去除凸点以外的下金属层，保证金凸点31之间电绝缘。
本发明在晶圆上实现金凸点31的制作，模具30可以重复使用降低成本，产量高，无高温过程，应力小，可靠性高，金凸点31形状灵活可控。另外通过压印的方式制作金凸点31可以实现纳米尺度的金凸点节距。
Claims (6)
1.一种适用于晶圆级倒装芯片的金凸点制作方法，其特征在于，包括以下步骤：
A、在经过初步加工的晶圆片上制备黏附层、扩散阻挡层和润湿层；
B、按要求制备压印模具；
C、在晶圆片上涂覆金纳米颗粒有机溶液；
D、把模具与晶圆片精确对齐，挤压溶液使其填满模具空腔；
E、蒸发溶液，然后冷却脱模；
F、加热分散的金纳米颗粒，使颗粒熔化形成固态连续的金凸点；
G、除去凸点外的下金属层，保证凸点之间的电气绝缘。
2.根据权利要求1所述的一种适用于晶圆级倒装芯片的金凸点制作方法，其特征在于：步骤A所述制备黏附层、扩散阻挡层和润湿层的方法为真空溅射沉积、电镀中的一种。
3.根据权利要求1所述的一种适用于晶圆级倒装芯片的金凸点制作方法，其特征在于：步骤B所述的按要求压制模具为，所制模具空腔应与晶圆片上待制凸点的形状及分布一致。
4.根据权利要求1所述的一种适用于晶圆级倒装芯片的金凸点制作方法，其特征在于：步骤D所述挤压溶液使其填满模具空腔能在低温、低压下进行，具体为低温80℃、低压＜40Kpa。
5.根据权利要求1所述的一种适用于晶圆级倒装芯片的金凸点制作方法，其特征在于：步骤F所述加热分散的金纳米颗粒，其温度根据金纳米颗粒的尺寸决定，选定的金纳米颗粒尺寸在2nm～10nm之间，则相应需要加热的温度将是130℃～940℃之间。
6.根据权利要求1所述的一种适用于晶圆级倒装芯片的金凸点制作方法，其特征在于：步骤G所述除去凸点外的下金属层，为化学腐蚀法逐层去除、光刻刻蚀中的一种。
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