CN102347736B - Integrated nano microcavity current amplifier - Google Patents
Integrated nano microcavity current amplifier Download PDFInfo
- Publication number
- CN102347736B CN102347736B CN201110129792.9A CN201110129792A CN102347736B CN 102347736 B CN102347736 B CN 102347736B CN 201110129792 A CN201110129792 A CN 201110129792A CN 102347736 B CN102347736 B CN 102347736B
- Authority
- CN
- China
- Prior art keywords
- integrated
- electrode
- current
- type doped
- waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention relates to an integrated nano cavity current amplifier, belonging to current amplifiers of a new structure, and comprising a current amplifying electrode, a signal electrode, a total current electrode, an n type doped waveguide, a p type doped waveguide, an electroluminescent material and a substrate, wherein the electroluminescent material and the p type doped waveguide are integrated on the substrate; the n type doped waveguide is integrated on the p type doped waveguide structure; the top surfaces of the n type doped waveguide, the p type doped waveguide and the electroluminescent material are at the same level, and the roughness is less than 2 nanometers; the current amplifying electrode is integrated at the top of the n type doped waveguide; the signal electrode is integrated at the top of the p type doped waveguide; and the total current electrode is integrated at the top of the electroluminescent material. The current amplifier disclosed by the invention has a small size, quick reaction speed and better high frequency characteristic than that of the current commercial triode devices, can provide a current amplification effect similar to a triode, and also can be used as a nano microcavity luminescent device, so that the current amplifier has a wide application range and is not limited to the working range of the triode.
Description
Technical field
The invention belongs to the current amplifier of new construction, relate to a kind of integrated nano microcavity current amplifier.
Background technology
Society, opto-electronic device is just playing more and more important effect.Computer operation speed is more at a high speed required people and all trades and professions are just causing the miniaturization of opto-electronic device size to the increasing demand of opto-electronic device, and will have good high speed response characteristic and high frequency characteristics.Along with development and the maturation of nanometer micro-processing technology, opto-electronic device is also development at full speed in miniaturization.In many decades in the past, the size of opto-electronic device continues to reduce, and this trend also can continue.
Due to reducing of device size, the theory of traditional devices is faced with quantum-mechanical challenge.The charge carrier fermi-distribution of bringing due to the quantum mechanical effects such as band structure, Pauli's exclusion principle will replace the Boltzmann in classical meaning to distribute.In order to break through the quantum theory limitation of traditional devices, emerging nano photoelectronic devices is more and more by international concern.Carbon nano-tube, nano wire, quantum dot etc. are widely studied and learn.
In traditional photoelectric device, although have good response speed and high frequency characteristics, due to the restriction of optical wavelength and the impact of diffraction effect, be difficult to device size to accomplish even nanometer scale of sub-wavelength.Although and traditional electronic device can be accomplished size nanometer scale, again because it too relies on electron drift velocity, make response speed and high frequency characteristics lower, often face the difficult problem that cannot work in high frequency region.Take the fet on ordinary meaning as example, in order to obtain higher response speed, that has to base width to be done is very narrow, then wears and the impact of base width modulation effect but be faced with again in theory the narrow quantum causing of base width.
Surface plasma excimer refers to that the free electron in photon and conductor interacts and is captured, and charge density fluctuation in the metal that external electric field excitation causes, produces collective oscillation, the electromagnetic mode giving off.This electromagnetic mode meets Maxwell equation group, and all exponentially decay on the both direction on vertical conductor surface, energy can not be escaped from surface, thereby the continuation that free electron and light wave produce resonance is propagated at conductive surface by local thereby the wave vector of light is changed.
In view of the characteristic of surface plasma excimer, it can be limited in energy of electromagnetic field even nanometer scale of sub-wavelength, and its reaction speed is far away higher than traditional electronic device, be a kind of solution that simultaneously realizes high reaction speed and small size opto-electronic device, and widely studied in the world.
Summary of the invention
To achieve these goals, the invention provides a kind of integrated nano microcavity current amplifier based on surface plasmons effect, size nanometer scale with sound response speed and high frequency characteristics.
The integrated cavity current amplifier of receiving, comprise electric current magnifying electrode, signal electrode, total current electrode, N-shaped doping waveguide, p-type doping waveguide, electroluminescent material and substrate, on substrate, be integrated with electroluminescent material and p-type doping waveguide, on p-type doping waveguiding structure, be integrated with N-shaped doping waveguide, N-shaped doping waveguide, p-type doping waveguide, the end face of electroluminescent material at grade, and roughness is less than 2 nanometers, be integrated with electric current magnifying electrode at N-shaped doping waveguide top, p-type doping waveguide top is integrated with signal electrode, electroluminescent material top is integrated with total current electrode.
Current amplifier of the present invention has that size is little, reaction speed is fast, high frequency characteristics is better than the triode device of current commercialization, and except the similar electric current amplification effect of triode is provided, can also be used as nanometer tiny cavity light-emitting device.It is widely used, and is not limited to the working range of triode own.
Accompanying drawing explanation
Fig. 1 is the stereogram of integrated nano microcavity current amplifier of the present invention.
Fig. 2 is the plane graph of integrated nano microcavity current amplifier section of the present invention.
Fig. 3 is that signal electrode electric current altogether of the present invention amplifies connection.
Fig. 4 is that total current electrode current altogether of the present invention amplifies connection.
Fig. 5 is the luminous connection of positively biased nanometers light of the present invention.
In figure: 1, electric current magnifying electrode, 2, signal electrode, 3, total current electrode, 4, N-shaped doping waveguide, 5, p-type doping waveguide, 6, electroluminescent material, 7, substrate.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is elaborated.
As shown in Fig. 1 Fig. 2, the integrated cavity current amplifier of receiving, comprise electric current magnifying electrode 1, signal electrode 2, total current electrode 3, N-shaped doping waveguide 4, p-type doping waveguide 5, electroluminescent material 6 and substrate 7, on substrate 7, be integrated with electroluminescent material 6 and p-type doping waveguide 5, in p-type doping waveguide 5 structures, be integrated with N-shaped doping waveguide 4, N-shaped doping waveguide 4, p-type doping waveguide 5, the end face of electroluminescent material 6 at grade, and roughness is less than 2 nanometers, be integrated with electric current magnifying electrode 1 at N-shaped doping waveguide 4 tops, p-type doping waveguide 5 tops are integrated with signal electrode 2, electroluminescent material 6 tops are integrated with total current electrode 3.
Described N-shaped doping waveguide 4, p-type doping waveguide 5, electroluminescent material 6, the thickness structure of these 3 structures is less than the half of electroluminescent material 6 emission wavelength in energising situation, forms the fiber waveguide micro-cavity structure of sub-wavelength.
Between described electric current magnifying electrode 1 and signal electrode 2, distance between signal electrode 2 and total current electrode 3 is all very little, can not be electrically shocked on the basis of wearing guaranteeing after electrifying electrodes, in theory calculating, will make to spill energy outside device as much as possible little, all be less than or equal to 100 nanometers.
In the time that electric current amplifies working method, adopt signal electrode connection or altogether total current electrode connection altogether, the wherein reverse-biased formation photoelectric diode structure of voltage between electric current magnifying electrode and signal electrode, total current electrode relative signal electrode is reverse-biased, in the time of electric current magnifying electrode relative signal electrode positively biased, device, can be as the light source of nanometer scale in light-emitting mode work.
In the present invention, substrate 7 is GaAs material, and electroluminescent material 6 is by growth technology, on GaAs substrate, makes multi-quantum pit structure, and wherein the upper lower waveguide layer of quantum well adopts Al
0.1ga
0.9as material, the quantum well structure of active layer adopts In
0.2ga
0.8as or GaAs material.The gross thickness of electroluminescent material 6 is 200nm, diameter 200nm.
After producing the structure of electroluminescent material 6, then by the method for etching, secondary epitaxy growth, magnetron sputtering, the photoelectric diode structure that making N-shaped doping waveguide 4, p-type doping waveguide 5 form, the selection of material is: N is taked in N-shaped doping waveguide 4
+-InP, P-InGaAs is taked in p-type doping waveguide 5.The thickness that guarantees N-shaped doping waveguide 4, p-type doping waveguide 5 equates with the thickness of electroluminescent material 6 or is similar to.The thickness of N-shaped doping waveguide 4, p-type doping waveguide 5 and the circular ring structure that electroluminescent material 6 forms, interior ring diameter is 200nm, is connected with electroluminescent material 6, outer ring diameter is 400nm.
Finally by vacuum coating technology at the thick golden film of device integral surface plating one deck 200nm, and etching and carry out electrode preparation, makes electric current magnifying electrode 1, signal electrode 2, total current electrode 3.Require golden film thickness preparation smooth as far as possible even.Etching will be carved and be worn golden membranous layer, and etching gap is as far as possible little, guaranteeing that gap covers on the basis of the contact structures between N-shaped doping waveguide 4, p-type doping waveguide 5, electroluminescent material 6 completely, by theory calculate make Lou as far as possible little to extraneous energy of electromagnetic field.The gap width using in present case is 50nm.
The photon being ejected by quantum-well materials in electric current amplification mode connection (Fig. 3, Fig. 4), the photoelectric diode structure being formed by N-shaped doping waveguide 4, p-type doping waveguide 5 absorbs, and inspires electron-hole pair in photodiode.Under the effect of reverse-biased electric field, electronics is swept to electric current magnifying electrode, and hole is swept to signal electrode, the electron recombination of coming with total current drift electrode at signal electrode, thus reduce signal electrode electric current.
Internal quantum efficiency in quantum well reaches 100%, and when the internal quantum efficiency of the photoelectric diode structure that N-shaped doping waveguide 4, p-type doping waveguide 5 form reaches 99%, the electric current of electric current magnifying electrode is 99 times of signal electrode electric current, has realized electric current amplification.
In light-emitting mode connection (Fig. 5), due to PN junction positively biased, even if the photon being ejected by quantum-well materials, the photoelectric diode structure being formed by N-shaped doping waveguide 4, p-type doping waveguide 5 absorbs, and in photodiode, inspire electron-hole pair, under the effect of positively biased electric field, electronics still injects to quantum-well materials, quantum efficiency is very little, the photon great majority coupling now ejecting becomes surface plasma excimer and in device boundaries outgoing, realizes electroluminescent nanometers light.
The present invention is simple in structure, material is common, technique is comparatively ripe, easily promote, can as triode, play electric current amplification, but take different connections can realize again lighting function, be not limited to triode effect itself, and volume is little, reaction speed is fast, high frequency property is good, will be more widely used.
Claims (2)
1. the integrated cavity current amplifier of receiving, it is characterized in that, this amplifier comprises electric current magnifying electrode (1), signal electrode (2), total current electrode (3), N-shaped doping waveguide (4), p-type doping waveguide (5), electroluminescent material (6) and substrate (7), on substrate (7), be integrated with electroluminescent material (6) and p-type doping waveguide (5), in p-type doping waveguide (5) structure, be integrated with N-shaped doping waveguide (4), N-shaped doping waveguide (4), p-type doping waveguide (5), the end face of electroluminescent material (6) at grade, and roughness is less than 2 nanometers, be integrated with electric current magnifying electrode (1) at N-shaped doping waveguide (4) top, p-type doping waveguide (5) top is integrated with signal electrode (2), electroluminescent material (6) top is integrated with total current electrode (3), described N-shaped doping waveguide (4), p-type doping waveguide (5) and electroluminescent material (6), these 3 structures in vertical direction thickness are less than the half of electroluminescent material (6) emission wavelength in energising situation.
2. the integrated cavity current amplifier of receiving according to claim 1, is characterized in that, the distance between described electric current magnifying electrode (1) and signal electrode (2), signal electrode (2) and total current electrode (3) is all less than or equal to 100 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110129792.9A CN102347736B (en) | 2011-05-19 | 2011-05-19 | Integrated nano microcavity current amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110129792.9A CN102347736B (en) | 2011-05-19 | 2011-05-19 | Integrated nano microcavity current amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102347736A CN102347736A (en) | 2012-02-08 |
| CN102347736B true CN102347736B (en) | 2014-06-18 |
Family
ID=45546068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110129792.9A Expired - Fee Related CN102347736B (en) | 2011-05-19 | 2011-05-19 | Integrated nano microcavity current amplifier |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102347736B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1551503A (en) * | 2003-04-25 | 2004-12-01 | 夏普株式会社 | Decoder circuit, light-receiving amplifier circuit and optical adapter |
| CN1578127A (en) * | 2003-06-27 | 2005-02-09 | 株式会社瑞萨科技 | High frequency power amplifier circuit, high frequency power amplifier electronic component and method thereof |
| CN101017875A (en) * | 2007-02-15 | 2007-08-15 | 华南师范大学 | High brightness lighting transistor and its preparing method |
-
2011
- 2011-05-19 CN CN201110129792.9A patent/CN102347736B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1551503A (en) * | 2003-04-25 | 2004-12-01 | 夏普株式会社 | Decoder circuit, light-receiving amplifier circuit and optical adapter |
| CN1578127A (en) * | 2003-06-27 | 2005-02-09 | 株式会社瑞萨科技 | High frequency power amplifier circuit, high frequency power amplifier electronic component and method thereof |
| CN101017875A (en) * | 2007-02-15 | 2007-08-15 | 华南师范大学 | High brightness lighting transistor and its preparing method |
Non-Patent Citations (3)
| Title |
|---|
| 何自立.全对称光电耦合功率放大器.《韶关大学韶关师专学报（自然科学版）》.1991,(第44期), * |
| 碳纳米管场效应晶体管设计与应用;许高斌 等;《电子测量与仪器学报》;20101030;第24卷(第10期);全文 * |
| 许高斌 等.碳纳米管场效应晶体管设计与应用.《电子测量与仪器学报》.2010,第24卷(第10期), |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102347736A (en) | 2012-02-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7663202B2 (en) | Nanowire photodiodes and methods of making nanowire photodiodes | |
| JP4835837B2 (en) | Photodiode and manufacturing method thereof | |
| CN103050591B (en) | Surface plasmon electro excitation source and manufacture method thereof | |
| Chen et al. | Nanophotonic integrated circuits from nanoresonators grown on silicon | |
| CN101950785B (en) | Structure of P-type GaN layer of GaN-based light-emitting diode chip | |
| CN104269472A (en) | Surface plasmon excimer electrically-induced excitation source with medium-metal near field coupling structure and manufacturing method thereof | |
| CN102437511B (en) | Surface plasmon laser of semiconductor nanowire-metal film structure | |
| TWI548119B (en) | Light emitting diode | |
| CN102201483A (en) | Silicon nanowire grating resonant enhanced photoelectric detector and manufacturing method thereof | |
| Yang et al. | Electrically driven lasers from van der Waals heterostructures | |
| CN106784213B (en) | A kind of ring cavity nano wire electrical pumping single-photon source device | |
| CN101764353B (en) | Micro-nano semiconductor edge emission fp laser and manufacturing method thereof | |
| CN110535033A (en) | It is electrically excited photonic crystal surface emitting laser element | |
| CN106653957A (en) | Surface plasmon electro-excitation and electrical modulation integrated device and manufacturing method thereof | |
| Hsueh et al. | Enhancement in light output of InGaN-based microhole array light-emitting diodes | |
| CN111200043B (en) | Electrically pumped quantum dot single photon source and preparation method thereof | |
| JP2018182306A (en) | Optical semiconductor element and method for driving optical semiconductor element | |
| TW201351708A (en) | A method for making light emitting diode | |
| CN109687286A (en) | A kind of bidirectional output semiconductor laser | |
| CN102347736B (en) | Integrated nano microcavity current amplifier | |
| CN104332820A (en) | Communication wave band GaN-base quantum cascade high-speed laser | |
| CN202395303U (en) | Surface plasma excimer laser | |
| CN212136467U (en) | Electrically driven optical antenna light source | |
| CN109638648A (en) | Electrical pumping silicon substrate iii-v edge emitting nanowire lasers and preparation method thereof | |
| WO2010052967A1 (en) | Silicon light-emitting element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140618 Termination date: 20160519 |