CN102334180A - Techniques for independently controlling deflection, deceleration, and focus of an ion beam - Google Patents
Techniques for independently controlling deflection, deceleration, and focus of an ion beam Download PDFInfo
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- CN102334180A CN102334180A CN2009801575785A CN200980157578A CN102334180A CN 102334180 A CN102334180 A CN 102334180A CN 2009801575785 A CN2009801575785 A CN 2009801575785A CN 200980157578 A CN200980157578 A CN 200980157578A CN 102334180 A CN102334180 A CN 102334180A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1471—Arrangements for directing or deflecting the discharge along a desired path for centering, aligning or positioning of ray or beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/10—Lenses
- H01J37/12—Lenses electrostatic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Abstract
Techniques for independently controlling deflection, deceleration, and focus of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for independently controlling deflection, deceleration, and focus of an ion beam. The apparatus may comprise an electrode configuration comprising a set of upper electrodes disposed above an ion beam and a set of lower electrodes disposed below the ion beam. The set of upper electrodes and the set of lower electrodes may be positioned symmetrically about a central ray trajectory of the ion beam. A difference in potentials between the set of upper electrodes and the set of lower electrodes may also be varied a long the central ray trajectory to reflect an energy of the ion beam at each point along the central ray trajectory for independently controlling deflection, deceleration, and focus of an ion beam.
Description
Technical field
The present invention relates to a kind of ion implantation technique, relate in particular to a kind of technology of skew, deceleration and/or focusing of independent control ion beam.
Background technology
Ion implantor (ion implanter) is widely used in the semiconductor manufacturing optionally to change the conductivity of material.In a typical ion implantor, the ion that produces from an ion source is directed to through a series of beamline elements, and described beam-line components comprises one or more analyzing magnet (analyzing magnet) and a plurality of electrode.Analyzing magnet is selected desired ionic species, the ion that leaches contamination class (contaminant species) and do not have institute's energy requirement, and the beam quality at adjustment target wafer place.The electrode that suitably is shaped can be revised the energy and the shape of ion beam.
Fig. 1 shows existing ion implantor 100, and it comprises ion source 102, extracts 104,90 ° of magnet analyzers of electrode (magnet analyzer), 106, first deceleration (D1) level (first deceleration (D1) stage) 108, the 70 ° of magnet analyzers 110 and second deceleration (D2) level 112.D1 and D2 retarding stage (also being called " retarding lens (deceleration lens) ") are formed by having a plurality of electrode that defines the hole that allows ion beam to pass through respectively.By the voltage potential that applies various combination to a plurality of electrodes, but D1 and D2 retarding lens steer ions energy and make ion beam with wanted energy impact target workpiece.
Above-mentioned D1 or D2 retarding lens can be static triode (or tetrode) retarding lens.Fig. 2 shows the perspective view of existing static triode retarding lens 200.Static triode retarding lens 200 comprises three groups of electrodes: inlet electrode (entrance electrode) 202 (also being called " termination electrode "), inhibition electrode (suppression electrode) 204 (or " focusing electrodes ") and exit electrodes (exit electrode) 206 (also being called " grounding electrode ", although it may not be connected to ground connection).Existing static tetrode retarding lens is similar to static triode retarding lens 200, suppresses electrode (or focusing electrode) except the tetrode lens have in another group that suppresses between electrode 204 and the exit electrodes 206.
In static triode retarding lens 200, each group electrode can have allow ion beam 20 pass (for example, along the bunch direction+the z direction) space/gap.As shown in Figure 2, each group electrode can comprise two conducting strips that are electrically coupled to each other with shared identical voltage potential.Perhaps, each group electrode can be and has the single chip architecture that is used to make the aperture that ion beam 20 passes.Thus, each group electrode is effectively for having the single electrode of single voltage potential.For for simplicity, with each group electrode of odd number indication.That is, these inlet electrodes 202 are called one " inlet electrode 202 ", these are suppressed electrode 204 be called for one " suppressing electrode 204 ", and these exit electrodes 206 are called one " exit electrodes 206 ".
In operation, independently to inlet electrode 202, suppress electrode 204 and exit electrodes 206 applies bias voltage, the energy of steer ions bundle 20 and/or shape in the following manner by this.Ion beam 20 can get into static triode retarding lens 200 and can have primary power, for example 10-20keV via inlet electrode 202.Can and suppress the ion in the accelerated ion beam 20 between the electrode 204 at inlet electrode 202.Suppress electrode 204 in case arrive, ion beam 20 for example can have approximately 30keV or higher energy.Suppressing between electrode 204 and the exit electrodes 206, can be with the ion retardation in the ion beam 20 to the energy of ions of injecting near the ion that is used for target wafer usually.Therefore, when ion beam 20 left static triode retarding lens 200, it for example can have approximately 3-5keV or lower energy.
The marked change of the ion energy that in static triode retarding lens 200, takes place can have substantial effect to the shape of ion beam 20.For example, retarding lens 200 can provide common local offset (co-local deflection) to filter high-octane neutral ion, and it can face the challenge of control deviation angle and bunch focusing.May have different electric currents according to ion beam 20 in order to the voltage of control focusing of ion beam and change, decide but the needed voltage of control ion beam 20 skew is energy (for example input and output) by ion beam with height.If the position of ion beam 20 continues to change, owing to can't promptly adjust the size (focusing) of ion beam 20, thereby will to adjust ion beam 20 in this way be difficult.Existing systems and method also can't provide solution, make the skew lens of local coexistence and skew and/or the focusing that retarding lens can't be controlled ion beam independently.
In view of aforementioned content, can understand existing ion implantation technique and exist relevant prominent question and defective.
Summary of the invention
The present invention discloses a kind of skew of independent control ion beam, the technology of slowing down and focusing on.In a specific exemplary embodiments, said technology can be by the skew of an independent control ion beam, slow down and realize with the device of focusing.This device comprises an electrode structure, and electrode structure comprises one group of top electrode that is disposed at ion beam top and the one group of bottom electrode that is disposed at the ion beam below.This group top electrode is organized bottom electrode therewith and is all had fixed position and not removable.This potential difference of organizing therewith between the bottom electrode of group top electrode also can change along with the central ray track of ion beam, uses the ion beam energy of reflection every bit on the central ray track, to control the ion beam skew independently, slow down and/or to focus on.
Aspect other of this specific exemplary embodiments, it is to locate with the central ray track that is symmetrical in ion beam that this group top electrode is organized bottom electrode therewith.
Aspect other of this specific exemplary embodiments, along above-mentioned central ray track, the potential difference that this group top electrode is organized between the bottom electrode therewith can obtain a numerical value divided by the gap between the ion beam, and this numerical value is (V
Upper(z)-V
Lower(z))/gap (z), and have a fixed proportion between the energy of this numerical value and this ion beam, this fixed proportion is coefficient * E
Beam(z).
Aspect other of this specific exemplary embodiments, be the every pair of top electrode and the bottom electrode that is applied to ion beam top and below with the antisymmetry current potential in order to the current potential of skew ion beam.
Aspect other of this specific exemplary embodiments, be applied to every pair of top electrode and bottom electrode current potential with the skew ion beam, be with the twice current potential and only put on a side of ion beam.
Aspect other of this specific exemplary embodiments, electrode structure is a staged electrode structure, so that the gap that this group top electrode is organized between the bottom electrode therewith is all identical along ion beam central ray track.
Aspect other of this specific exemplary embodiments, electrode structure is a trumpet type electrode structure, so that the gap that this group top electrode is organized between the bottom electrode therewith increases along the central ray track of ion beam.
Aspect other of this specific exemplary embodiments, electrode structure is a parallel electrode structure, so that each electrode of this group top electrode is parallel, and each electrode of this group bottom electrode is parallel.
Aspect other of this specific exemplary embodiments, this group top electrode organize therewith bottom electrode be battery lead plate and rod-shaped electrode at least one of them.
Aspect other of this specific exemplary embodiments, this group top electrode organize therewith bottom electrode be by non-impurity material and material with relatively low thermel expansion coefficient one of them is made at least.
Aspect other of this specific exemplary embodiments, the electrode that this group top electrode is organized bottom electrode therewith is an arc, to focus on horizontal ion beam.
Aspect other of this specific exemplary embodiments, electrode structure also comprises one or more side member, to focus on horizontal bunch.
Aspect other of this specific exemplary embodiments, side member is installed at least one electrode that this group top electrode is organized bottom electrode therewith, and one or more collets support this group top electrode and organize bottom electrode therewith.
Aspect other of this specific exemplary embodiments, side member is kept and is organized top electrode and this group bottom electrode different potential therewith, so that extra horizontal beam line focus to be provided.
In another specific exemplary embodiments, said technology can realize by skew, deceleration and the method for focusing of an independent control ion beam.The method comprises, an electrode structure at first is provided, and electrode structure comprises one group of top electrode that is disposed at the ion beam top and the one group of bottom electrode that is disposed at the ion beam below, and this group top electrode is organized bottom electrode therewith and had fixed position and not removable; The method also can comprise the potential difference that changes this group top electrode and this group bottom electrode along a central ray track of this ion beam; With the ion beam energy of reflection every bit on this central ray track, with the skew of controlling this ion beam independently, slow down and focusing.
At present will be referring to coming to describe in more detail the present invention like the exemplary embodiments of the present invention that is showed in the accompanying drawing.Though followingly describe the present invention, should understand and the invention is not restricted to this referring to exemplary embodiments.Can understand the those of ordinary skill in affiliated field of the teaching of this paper and will recognize extra enforcement, modification and embodiment and other use fields, its be in as in the scope of the present invention described herein and the present invention can have remarkable effectiveness about it.
Description of drawings
For the more complete understanding of facility to this disclosure, at present please referring to accompanying drawing, wherein same numbers is indicated same components.Only should these accompanying drawings be interpreted as and limit this disclosure, but expect that it is merely exemplary.
Fig. 1 is a kind of existing ion implantor.
Fig. 2 is a kind of existing static triode lens.
Fig. 3 is the end view of a kind of staged lens arrangement of one embodiment of the invention.
Fig. 4 A to Fig. 4 D is the key diagram of skew in the staged lens arrangement of one embodiment of the invention, deceleration and/or focusing.
Fig. 5 is the end view of a kind of trumpet type lens arrangement of one embodiment of the invention.
Fig. 6 A to Fig. 6 C is the key diagram of skew in the trumpet type lens arrangement of one embodiment of the invention, deceleration and/or focusing.
Fig. 7 is the end view of a kind of parallel lens structure of one embodiment of the invention.
Fig. 8 is the key diagram of skew in the parallel lens structure of one embodiment of the invention, deceleration and/or focusing.
Fig. 9 is the end view of lens arrangement of the use rod-shaped electrode of one embodiment of the invention.
Figure 10 is skew in the lens arrangement of the use rod-shaped electrode of one embodiment of the invention, slows down and/or focusing, compared to the key diagram that in the parallel lens structure, squints, slows down and/or focus on.
Figure 11 A is the vertical view of lens arrangement of the use rod-shaped electrode of one embodiment of the invention.
Figure 11 B is the vertical view that the lens arrangement of formula rod-shaped electrode is scratched in the use of one embodiment of the invention.
Figure 11 C is the vertical view of lens arrangement of use rod-shaped electrode, arc-shaped end plate and a terminal electrode of one embodiment of the invention.
Figure 12 A is the use rod-shaped electrode of one embodiment of the invention and the vertical view of the lens arrangement of a terminal electrode.
Figure 12 B is the end view of lens arrangement of use rod-shaped electrode, terminal electrode and the side focusing electrode of one embodiment of the invention.
Figure 13 is the end view that uses the lens arrangement of assembling lining in a conduction terminal of one embodiment of the invention.
Embodiment
A kind of improvement pattern of embodiments of the invention explanation electrostatic lens structure, it has the inhibition/focusing electrode of one or more variable control.These electrodes can comprise various external forms, curvature, position, material and/or structure, and it can be relative to each other and independently or control or bias voltage dividually, thereby can be more flexibly and control the external form and the energy of ion beam efficiently.
Fig. 3 is the end view of a kind of staged lens arrangement of one embodiment of the invention.Staged lens arrangement 300 comprises multi-group electrode.For instance, staged lens arrangement 300 can comprise one group of inlet electrode 302, one or more groups inhibition/focusing electrode 304 and one group of exit electrodes 306.Every group of electrode can have space/gap (space/gap), so that ion beam 30 (for example being ribbon ion beam) passes through.In certain embodiments, these electrodes (for example inlet electrode 302, inhibition/focusing electrode 304 and exit electrodes 306) can be provided in a housing 308.One pumping 310 can be connected in housing (housing) 308 directly or indirectly.In one embodiment, pumping 310 can be a vacuum pump, so that a high vacuum environment or other controlled environments to be provided.In other embodiments, housing 308 can comprise one or more linings (bushings) 312.These linings 312 can be with making housing 308 and other member insulation.Also other various embodiments can be provided at this.
As shown in Figure 3, each organizes inlet electrode 302 can comprise two conducting strips of electric property coupling each other with exit electrodes 306, or can be and have an aperture so that the single chip architecture that ion beam 30 passes.In certain embodiments, the first half of inhibition/focusing electrode 304 can have different potential (conducting strip that for example separates has different potential) with Lower Half, with the ion beam 30 that squints and passed through.For for simplicity, represent each group electrode with odd number.In other words, these inlet electrodes 302 can be described as one " inlet electrode 302 ", and these suppress electrode 304 and can be described as for one " suppressing electrode 304 ", and these exit electrodes 306 are called one " exit electrodes 306 ".Though staged lens arrangement 300 is to be described to seven element lens structures (for example it has five groups of inhibition/focusing electrodes 304), should be appreciated that it can use any amount of element (or electrode).For example in certain embodiments, staged lens arrangement 300 can use three to ten combination of electrodes.Also other various embodiments can be provided at this.
In certain embodiments, the ion beam 30 through electrode can comprise boron or other elements.By using a plurality of thin electrodes (for example inhibition/focusing electrode 304) to control, can make ion beam 30 reach electrostatic focusing along " progression " of the current potential of beam path or beamline 30.In staged lens arrangement 300, high speed reducing ratio (high deceleration ratios) also can be provided under the state of avoiding overfocus (over-focusing).Therefore, use the input ion beam 30 in an energy range can form the higher quality bunch, even very low-energy output bunch also is like this.In one embodiment, when the electrode of ion beam 30 scioptics structures 300, ion beam 30 can be decelerated to 0.2keV from 6keV, and by 15 ° of the electrode of staged lens arrangement 300 skews.In this embodiment, the energy ratio can be 30/1.Also other various embodiments can be provided at this.
Should be appreciated that at this, separately and independently control slow down, skew and/or focus on and can reach by following manner: (1) keeps the symmetry (for example inlet electrode 302, inhibitions/focusing electrode 304 and exit electrodes 306) of electrode with respect to the central ray track of ion beam 30; And (2) are along the central ray track change offset voltage of ion beam 30, to be reflected in deviation angle 35 times, the bunch energy of the every bit on the central ray track.Should be appreciated that at this by the symmetry of electrode with respect to the central ray track of ion beam 30, near the top electrode of ion beam 30 and the end of bottom electrode, it can keep the vertical range that equates (or near equating) with the central ray track of ion beam 30.
For instance, be positioned at the electrode of ion beam 30 tops and below, its voltage difference (V for example
Defl(z)) can make Offset portion (the deflection component) ((V for example of electric field via setting
Upper(z)-V
Lower(z))/and gap (z)) have one fixed proportion/coefficient (coefficient * E for example between therewith the bunch energy (it can change along electrode or lens)
Beam(z)).Shown in following equation 1:
V
Defl(z)/gap (z)=coefficient * E
Beam(z)
In certain embodiments, this offset voltage can apply to reverse symmetry (for example+/-V
Defl(z)).In other embodiments, offset voltage for example is a side that applies and only be applied to ion beam 30 with the twice offset voltage.Should be appreciated that at this,, therefore just can this relation be implemented on circuit network or other similar network because the voltage relationship between the upper and lower electrode can be fixed into particular geometric relation.Therefore, even fail to eliminate fully in hardware for the power supply of twice and/or keep the demand of this relation, also can therefore reduce this demand.Also other various embodiments can be provided at this.
Fig. 4 A to Fig. 4 D is the key diagram 400A to 400D of skew in the staged lens arrangement of one embodiment of the invention, deceleration and/or focusing.In these key diagrams 400A to 400D, under each electrode that produces various focused conditions, ion beam 30 has distinct transmit rate and voltage/bias voltage.Should be appreciated that at this each illustrative figure can use 0.16 offset coefficient (like above-mentioned equation 1) and can produce same or similarly skew (for example squinting 15 °).
For example, Fig. 4 A is in the staged lens arrangement, the key diagram 400A of skew, deceleration and/or focusing that use zero emissivity ion beam causes.Fig. 4 B is in the staged lens arrangement, the key diagram 400B of skew, deceleration and/or focusing that use non-zero emissivity ion beam causes.Fig. 4 C is in the staged lens arrangement, the key diagram 400C of skew, deceleration and/or focusing that use convergence and non-zero emissivity ion beam cause.Fig. 4 D is in the staged lens arrangement, uses the key diagram 400D of skew, deceleration and/or focusing that different focus voltages cause.In most situation, the coefficient of equation 1 can be maintained 0.16.Also other various embodiments can be provided at this.
Fig. 5 is the end view of a kind of trumpet type (flared) lens arrangement 500 of one embodiment of the invention.Similar with the staged lens arrangement 300 of Fig. 3, trumpet type lens arrangement 500 also can comprise multi-group electrode, for example one group of inlet electrode 502, one or more groups inhibition/focusing electrode 504 and one group of exit electrodes 506.Every group of electrode can have an opening, so that an ion beam 50 passes through with deviation angle 55.Though trumpet type lens arrangement 500 is to be shown as seven element lens structures, right similar with Fig. 3, should be appreciated that at this it can use any amount of element (or electrode).For example in certain embodiments, trumpet type lens arrangement 500 can use three to ten groups of electrodes.Also other various embodiments can be provided at this.
Yet the different Yu Qike of being in Fig. 3 of the trumpet type lens arrangement 500 of Fig. 5 are oriented to the structure of " trumpet type ".For example, 50 openings that can be positioned at inlet electrode 502 places at the opening at exit electrodes 506 places of ion beam greater than ion beam 50.Therefore, the opening at each group inhibition/focusing electrode 504 place can increase or be horn-type opening gradually.Will be appreciated that at this electrode in this structure is trumpet type (for example in order to avoid bunch to impinge upon on the electrode), it still keeps symmetry on the central ray track of ion beam 50.Also other various embodiments can be provided at this.
Fig. 6 A is the key diagram 600A of skew in the trumpet type lens arrangement of one embodiment of the invention, deceleration and/or focusing.In this embodiment, electrode is trumpet type and distributes to avoid bunch to impinge upon on the electrode, and it maintains the symmetry at the central ray track place of ion beam 50.
Key diagram 600B, 600C that Fig. 6 B and Fig. 6 C are respectively skew in the trumpet type lens arrangement of one embodiment of the invention, slow down and/or focus on.Will be appreciated that,, can further control final deviation angle 55 with less adjustment or " fine setting " though deviation angle is to be defined by the offset coefficient in the equation 1.For instance, fine setting can be by locating to increase a little drift potential (voltage) at final electrode (last electrode) (for example finally inhibitions/focusing electrode 504) and reaching, and its adjustable ratio is put in order to a final energy.Please refer to Fig. 6 B, the key diagram 600B of the skew of trumpet type lens arrangement, deceleration and/or focusing has shown the effect of-0.2 fine setting.Please refer to Fig. 6 C, Figure 60 0C of the skew of trumpet type lens arrangement, deceleration and/or focusing shown+effect of 0.2 fine setting.Also other various embodiments can be provided at this.
Fig. 7 is the end view of a kind of parallel lens structure 700 of one embodiment of the invention.Similar with the trumpet type lens arrangement 500 of Fig. 5, parallel lens structure 700 can comprise multi-group electrode, for example one group of inlet electrode 702, one or more groups inhibition/focusing electrode 704 and one group of exit electrodes 706.Each group electrode can have one space/gap and ion is passed through with deviation angle 75 along the central ray track of ion beam 70.Though parallel lens structure 700 is shown as seven element lens structures, and is similar with Fig. 5, should be appreciated that it can use any amount of element (or electrode).For example in certain embodiments, parallel lens structure 700 can be used three to ten groups of electrodes.Also other various embodiments can be provided at this.
Also will be appreciated that at this electrode of parallel lens structure 700 can be similar and be trumpet type with the trumpet type lens arrangement of Fig. 5 500.For instance, ion beam 70 can be greater than the opening of ion beam 70 at inlet electrode 702 places at the opening at exit electrodes 706 places.Therefore, be positioned at each opening of organizing inhibition/focusing electrode 704 and can little by little increase or be the trumpet type expansion.Electrode is also kept symmetry with respect to the central ray track of ion beam 70, produces aberrations to avoid ion beam 70.Will be appreciated that at this,, the embodiment (for example stepped construction etc.) of other multiple different types so also can be provided though the electrode of parallel lens structure 700 is to be example with the horn-type structure.
Yet different with Fig. 5 is that the electrode of the parallel lens structure 700 of Fig. 7 is parallel.For example, be to make electrode edge have an angle to keep symmetry with respect to the trumpet type lens arrangement 500 of Fig. 5 with respect to the central ray track, the electrode of the parallel lens structure 700 of Fig. 7 is that the parallel edge of electrode that makes remains in similar position.
The parallel lens structure of Fig. 7 has many relevant advantages.For example, compared to trumpet type that needs higher accuracy and accuracy or stepped electrode, the electrode ratio in the parallel lens structure 700 is easier to the location.Therefore, as long as the maintenance of the electrode edge of parallel lens structure 700 is located similar in appearance to the electrode edge mode of the trumpet type lens arrangement 500 of Fig. 5, just can reduce to minimum because of the influence that structural change caused ion beam 70.At this other multiple embodiment also can be provided.
Fig. 8 is the key diagram 800 of skew in the parallel lens structure of one embodiment of the invention, deceleration and/or focusing.At this, battery lead plate is parallel and be trumpet type, control skew independently to be provided, to slow down and/or to focus on.
Fig. 9 is the end view of the lens arrangement 900 of one embodiment of the invention, and wherein lens arrangement 900 uses rod-shaped electrode.Similar with the trumpet type lens arrangement 500 of Fig. 5, use the lens arrangement 900 of rod-shaped electrode can comprise multi-group electrode, for example one group of inlet electrode 902, one or more groups inhibition/focusing electrode 904 and one group of exit electrodes 906.Every group of electrode can have one space/gap, so that ion passes through with a deviation angle 95 along the central ray track of ion beam 90.Though using the lens arrangement 900 of rod-shaped electrode is to be example with seven element lens structures, similar with Fig. 5, should be appreciated that at this any amount of element (or electrode) also can be used.For example in certain embodiments, use the lens arrangement 900 of rod-shaped electrode can use three to ten groups of electrodes.Also other various embodiments can be provided at this.
Also will be appreciated that at this, use the lens arrangement 900 of rod-shaped electrode to have similar horn-type structure equally with the trumpet type lens arrangement 500 of Fig. 5.For instance, ion beam 90 opening that is positioned at exit electrodes 906 places is positioned at the opening at inlet electrode 902 places greater than ion beam 90.Therefore, the opening at every group of inhibition/focusing electrode 904 places little by little increases or is trumpet type and launches.Electrode also can be with respect to the central ray track of ion beam 90 and is kept symmetry.Will be appreciated that at this, is to describe with horn-type structure though use the lens arrangement 900 of rod-shaped electrode, the right embodiment that other multiple different types also can be provided (for example stepped construction etc.).
Yet different with Fig. 5 is that the inhibition/focusing electrode 904 of the lens arrangement 900 of Fig. 9 can use rod-shaped electrode to replace battery lead plate.As long as the position of rod-shaped electrode remains on the similar position of electrode edge with the trumpet type lens arrangement 500 of Fig. 5, just can the influence to ion beam 90 be reduced to minimum.For example, Figure 10 is the comparative descriptions Figure 100 0 according to skew, deceleration and/or the focusing of the lens arrangement of the use pole shown in one embodiment of the invention and parallel lens structure.At this, according to one embodiment of the invention, the rod-shaped electrode bar can provide independently control skew effectively, slows down and/or focus on.
Rod-shaped electrode can be formed by non-impurity material (non-contaminating) manufacturing, for example graphite, glass graphite (glassy carbon) or other non-impurity materials.Will be appreciated that at this electrode also can be processed by the material with low thermal coefficient of expansion.Also other various embodiments can be provided at this.
Use rod-shaped electrode to have plurality of advantages.For example, the surf zone of rod-shaped electrode (or electrode stem) is in fact less than the surf zone of battery lead plate.Therefore, rod-shaped electrode helps to reduce the possibility of the spontaneous generation of discharge, fault and/or charged particle.Moreover, use rod-shaped electrode can allow more open geometry, thus, it allows the bigger effect of bleeding (for example by vacuum pump 310).Therefore, can reduce charge-exchange and dump energy pollution because of reducing pressure.
Figure 11 A is the vertical view of lens arrangement 1100A of the use rod-shaped electrode of one embodiment of the invention.In this embodiment, rod-shaped electrode 1104 can be installed on one or more collets 1114 by the hole (not shown), or has on the conductive plate of insulating bushing.Use collets 1114 or lining that the position of rod-shaped electrode is independent of in the temperature of change.
Figure 11 B is the vertical view that the lens arrangement 1100B of formula rod-shaped electrode is scratched in the use of one embodiment of the invention.By on one or more collets 1114 or lining, hole being set, rod-shaped electrode 1104 can be bending, arc and/or arch.Crooked rod-shaped electrode 1104 has an advantage, and promptly it can provide bigger horizontal focusing to ion beam.
Horizontal focusing also can be reached by other modes.For example, Figure 11 C is use rod-shaped electrode, the arc-shaped end plate (end plate) and the vertical view of the lens arrangement 1100C of terminal electrode (field termination eledtrodes) of one embodiment of the invention.At this, arc-shaped end plate (for example the arc exit electrodes 1106) can provide bigger horizontal focusing to ion beam.
Will be appreciated that at this, if the wide inadequately or collets 1114 of electrode 1104 are by electron gain in the ion beam, near collets 1114 or the lining electrostatic field may the interfering ion bundle then.Therefore, preferably can provide enough wide electrode 1104 to reduce the disturbing effect of collets or lining 1114 to lens arrangement.In order further to reduce the influence of collets or lining 1114, can utilize one or more terminal electrode 1116 at this.In certain embodiments, these terminal electrodes 1116 can be arranged on collets or the lining 1114, and are positioned at intermediate potential (intermediate potentials) zone of inhibition/focusing electrode 1104, to alleviate ion beam are caused any extra influence.
Figure 12 A is use rod-shaped electrode 1204 of one embodiment of the invention and the vertical view of the lens arrangement 1200A of a terminal electrode 1216.In this embodiment, one or more terminal electrode 1216 can directly or indirectly be installed up to rod-shaped electrode 1204 side with the influence of shield perimeter member effectively (for example assembled block or assembled plate).
Figure 12 B is use rod-shaped electrode 1204, terminal electrode 1216 of one embodiment of the invention and the end view of the lens arrangement 1200B of side focusing electrode 1218.In this embodiment, side focusing electrode 1218 can between last lower beam, keep an average and corrigendum to current potential, focus on to be up to the standard and the space charge of payment ion beam.
Will be appreciated that at this equation of controlling the electric current in these thin plates can be identical with the electromagnetic field in the vacuum.For instance, electric current (solution of current) can the Laplace's equation formula (Laplace ' s equation) adds upper boundary conditions and states with the current potential that generates an electromagnetic field.Therefore, the current potential on the thin plate can be the simulation current potential of the intermediate point between two rod-shaped electrodes.
Figure 13 is the end view of the lens arrangement 1300 of one embodiment of the invention, and this lens arrangement 1300 uses assembling lining (mount bushing) 1320 in a conduction terminal.Will be appreciated that at this one or more assembling lining 1320 can be used to resistance thin plate (a for example terminal electrode 1316) is connected to rod-shaped electrode 1304.These assembling linings 1320 can be processed by electric conducting material, and it for example is graphite, glass graphite and/or other electric conducting materials.Also side focusing electrode 1318 can be provided at this, it can be connected to collets 1314 or lining.In certain embodiments, terminal electrode 1316 can be processed by having high-resistance electric conducting material, its for example carborundum (silicon carbide, SiC) or other similar resistance materials (for example aluminium).The high voltage source that this measure helps to reduce from being connected with rod-shaped electrode 1304 draws too much electric current.Carborundum has the resistance less than 1E7ohm-cm.Collets 1314 or assembling lining 1320 can be processed by quartzy or other materials similar.Also other various embodiments can be provided at this.
The advantage of this kind structure is, the equipotential of its side focusing electrode 1218 (equipotentials) external form can be along with applying voltage and change on rod-shaped electrode 1204, and it can be contrast with the lateral terminal electrode 1216 with fixed geometric external form.
A plurality of embodiment of the present invention can provide independently control skew, slows down and/or focus on.This kind technology also can be in order to controllably to reduce the ribbon ion beam that ion beam energy and collimation one are dispersed.Type variable focuses on and can reach by adjusting the electrode of above-mentioned multiple lens arrangement independently and selectively.This technology not only provides required correction to the ion beam external form, and independent controlled electrode finally can provide a parallel ribbon ion beam that flows out from the electrostatic lens structure, injects to improve ion.
Will be appreciated that here, be applied to actual voltage potential on the independent bias electrode and can calculate definition according to Mathematical Modeling and come out, or can learn with the angle that measures respective function by adjusting bias voltage times without number.Perhaps, can integrate calculating and experimental technique simultaneously to obtain bias voltage.
Will be appreciated that here the external form of electrode (the for example external form of inhibition/focusing electrode) can not be a line style.For example, can use annular electrode with certain radius of curvature.In this embodiment, nonlinear curvature can be in order to proofread and correct because of space-charge force or second-order effects that other similar strength produced.
Also will be appreciated that here, the operation of electrostatic lens arrangement is not constrained in order to quicken or the decelerate ions bundle in the foregoing description.
Will be appreciated that, when these electrodes are when describing and illustrating, also can consider other shapes, its cross sectional shape, quantity and size with shaft-like here.
Also will be appreciated that here,, other multiple electrostatic lens structures also can be provided although embodiments of the invention are to be example with the electrostatic lens structure of using seven elements (lens).The electrostatic lens structure of the electrode (for example having single, a plurality of or segmented electrode) of lesser amt or a greater number for example, can be provided.
Also will be appreciated that at this although embodiments of the invention are to be applied in ion to inject, reach skew to control electrostatic lens independently, slow down and/or focus on, so this technology also can be used for other injections.The technology of the variable electrostatic lens that is disclosed for instance, also can be used for other and uses in the different kinds of ions injected system that static slows down and/or squint in magnetic field.Also other various embodiments can be provided at this.
Disclosed be not limited to described specific embodiment.In fact, the content of in this paper, describing, the those of ordinary skill in affiliated field will obvious other various embodiment of the present invention and to modification of the present invention from aforementioned description and accompanying drawing.Therefore, these other embodiment and modification are intended to be in the scope of the present invention.In addition; Though in specific environment, described the present invention under the background from the particular implementation of specific purpose among this paper; But the those of ordinary skill in affiliated field will be recognized its serviceability and be not limited to this, and the present invention can be implemented in many environment from many purposes valuably.Therefore, claim should be in view of explaining like of the present invention complete range and spirit described herein.
Claims (28)
1. device, in order to the skew of independent control ion beam, slow down and focusing, said device comprises:
One electrode structure; Comprise one group of top electrode that is disposed at ion beam top and the one group of bottom electrode that is disposed at this ion beam below; Wherein this group top electrode and this group bottom electrode have fixed position and not removable; And wherein the potential difference between this group top electrode and this group bottom electrode changes along with a central ray track of this ion beam, with the energy of reflection this ion beam of every bit on this central ray track, uses the skew of controlling this ion beam independently, slows down and focusing.
2. device according to claim 1, wherein this group top electrode and this group bottom electrode are to locate with this central ray track that is symmetrical in this ion beam.
3. device according to claim 1, wherein along this central ray track, the potential difference between this group top electrode and this group bottom electrode can obtain a numerical value divided by the gap between this ion beam, and this numerical value is (V
Upper(z)-V
Lower(z))/gap (z), and have a fixed proportion between the energy of this numerical value and this ion beam, this fixed proportion is coefficient * E
Beam(z).
4. device according to claim 1, wherein in order to the current potential of this ion beam that squints be applied to this ion beam top and below with the antisymmetry current potential this to top electrode and bottom electrode.
5. device according to claim 1 wherein is applied to every pair of top electrode and the bottom electrode current potential with this ion beam that squints, and is a side that also only puts on this ion beam with the twice current potential.
6. device according to claim 1, wherein this electrode structure is a staged electrode structure, so that it is all identical along this central ray track of this ion beam with the gap between this group bottom electrode to organize top electrode.
7. device according to claim 1, wherein this electrode structure is a trumpet type electrode structure, so that the gap between this group top electrode and this group bottom electrode is along this central ray track increase of this ion beam.
8. device according to claim 1, wherein this electrode structure is a parallel electrode structure, so that each electrode of this group top electrode is parallel, and each electrode of this group bottom electrode is parallel.
9. device according to claim 1, wherein the electrode of the electrode of this group top electrode and this group bottom electrode be battery lead plate and rod-shaped electrode at least one of them.
10. device according to claim 1, wherein the electrode of the electrode of this group top electrode and this group bottom electrode be by non-impurity material and material with relatively low thermel expansion coefficient one of them is made at least.
11. device according to claim 1, wherein the electrode of the electrode of this group top electrode and this group bottom electrode is an arc, to focus on horizontal ion beam.
12. device according to claim 1, wherein this electrode structure comprises that also one or more side member is to focus on horizontal bunch.
13. device according to claim 12, wherein this side member or those side member are installed at least one electrode of this group top electrode and this group bottom electrode, and one or more collets support should group top electrode and this group bottom electrode.
14. device according to claim 11, wherein this side member or those side member are kept and this group top electrode and this group bottom electrode different potential, so that extra horizontal beam line focus to be provided.
15. a method, in order to skew, deceleration and the focusing of independent control ion beam, said method comprises:
One electrode structure is provided, one group of bottom electrode that it comprises the one group of top electrode that is disposed at ion beam top and is disposed at this ion beam below, this group top electrode and this group bottom electrode are on fixing and immovable position; And
Change the potential difference of this group top electrode and this group bottom electrode along a central ray track of this ion beam, with the energy of reflection this ion beam of every bit on this central ray track, with the skew of controlling this ion beam independently, slow down and focusing.
16. method according to claim 15, wherein this group top electrode and this group bottom electrode are to locate with this central ray track that is symmetrical in this ion beam.
17. method according to claim 15, wherein along this central ray track, the potential difference between this group top electrode and this group bottom electrode can obtain a numerical value divided by the gap between this ion beam, and this numerical value is (V
Upper(z)-V
Lower(z))/gap (z), and have a fixed proportion between the energy of this numerical value and this ion beam, this fixed proportion is coefficient * E
Beam(z).
18. method according to claim 15, wherein in order to the current potential of this ion beam that squints be applied to this ion beam top and below with the antisymmetry current potential this to top electrode and bottom electrode.
19. method according to claim 15 wherein is applied to every pair of top electrode and the bottom electrode current potential with this ion beam that squints, and is a side that also only puts on this ion beam with the twice current potential.
20. method according to claim 15, wherein this electrode structure is a staged electrode structure, so that it is all identical along this central ray track of this ion beam with the gap between this group bottom electrode to organize top electrode.
21. method according to claim 15, wherein this electrode structure is a trumpet type electrode structure, so that the gap between this group top electrode and this group bottom electrode is along this central ray track increase of this ion beam.
22. method according to claim 15, wherein this electrode structure is a parallel electrode structure, makes that each electrode of this group top electrode is parallel, and each electrode of this group bottom electrode is parallel.
23. method according to claim 15, wherein the electrode of the electrode of this group top electrode and this group bottom electrode be battery lead plate and rod-shaped electrode at least one of them.
24. method according to claim 15, wherein the electrode of the electrode of this group top electrode and this group bottom electrode be by non-impurity material and material with relatively low thermel expansion coefficient one of them is made at least.
25. method according to claim 15, wherein the electrode of the electrode of this group top electrode and this group bottom electrode is an arc, to focus on horizontal ion beam.
26. method according to claim 15, wherein this electrode structure also comprises one or more side member, to focus on horizontal bunch.
27. method according to claim 26, wherein this side member or those side member are installed at least one electrode of this group top electrode and this group bottom electrode, and one or more collets support should group top electrode and this group bottom electrode.
28. method according to claim 26, wherein this side member or those side member are kept and this group top electrode and this group bottom electrode different potential, so that extra horizontal beam line focus to be provided.
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| US12/348,091 US7888653B2 (en) | 2009-01-02 | 2009-01-02 | Techniques for independently controlling deflection, deceleration and focus of an ion beam |
| US12/348,091 | 2009-01-02 | ||
| PCT/US2009/062031 WO2010077418A1 (en) | 2009-01-02 | 2009-10-26 | Techniques for independently controlling deflection, deceleration, and focus of an ion beam |
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| US (1) | US7888653B2 (en) |
| JP (1) | JP5592898B2 (en) |
| KR (1) | KR101426282B1 (en) |
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Also Published As
| Publication number | Publication date |
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| JP5592898B2 (en) | 2014-09-17 |
| KR101426282B1 (en) | 2014-08-05 |
| KR20110128805A (en) | 2011-11-30 |
| US7888653B2 (en) | 2011-02-15 |
| JP2012514836A (en) | 2012-06-28 |
| TW201027585A (en) | 2010-07-16 |
| WO2010077418A1 (en) | 2010-07-08 |
| TWI463518B (en) | 2014-12-01 |
| CN102334180B (en) | 2013-11-06 |
| US20100171042A1 (en) | 2010-07-08 |
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