CN102332045A - Double-gate structure MOSFET (metal-oxide semiconductor field-effect transistor) sub-threshold swing analytical model - Google Patents

Double-gate structure MOSFET (metal-oxide semiconductor field-effect transistor) sub-threshold swing analytical model Download PDF

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CN102332045A
CN102332045A CN201110282660A CN201110282660A CN102332045A CN 102332045 A CN102332045 A CN 102332045A CN 201110282660 A CN201110282660 A CN 201110282660A CN 201110282660 A CN201110282660 A CN 201110282660A CN 102332045 A CN102332045 A CN 102332045A
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double
gate structure
sub
mosfet
analytical model
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丁智浩
胡光喜
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Fudan University
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Fudan University
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Abstract

The invention belongs to the technical field of semiconductors and in particular relates to a double-gate structure MOSFET (metal-oxide semiconductor field-effect transistor) sub-threshold swing analytical model. The change situation of the electron concentration at the lowest point of the surface potential of an MOSFET along with gate voltage is figured out according to the potential distribution of the double-gate structure MOSFET, thereby getting the sub-threshold swing analytical model. The model is clear in physical conception, easy to calculate and high in calculation precision, thereby providing an effective method for theoretical simulation of a novel double-gate device.

Description

A kind of double-gate structure MOSFET subthreshold value amplitude of oscillation analytic model
Technical field
The invention belongs to technical field of semiconductors, be specifically related to the model that grid structural metal-oxide-semiconductor field effect transistor (MOSFET) subthreshold value amplitude of oscillation is enclosed in a kind of calculating.
Background technology
Along with the continuous development of integrated circuit technique, device size constantly reduces, and traditional MOSFET is faced with a series of many problems such as short-channel effect.Therefore the research of new device architecture just seems very necessary.Double grids MOSFET then is a kind of more satisfactory device architecture, and grid control ability is strong, can suppress short-channel effect, reduces the subthreshold value amplitude of oscillation, thereby lower power consumption is arranged.For this structure, carry out theoretical research, create analytic model, just seem very important.
Subthreshold value amplitude of oscillation S is one of of paramount importance parameter of MOSFET, is defined as: under the situation that source-drain voltage is fixed, and the change of ten times of pairing grid voltages of the every variation of electric current.Understand Devices Characteristics, setting up accurately, subthreshold value amplitude of oscillation model is very necessary.
Summary of the invention
The object of the present invention is to provide a kind of clear physics conception, be easy to calculate, and the high double-gate structure MOSFET subthreshold value amplitude of oscillation analytic model of computational accuracy.
The double-gate structure MOSFET threshold voltage analytic model that the present invention proposes is for the simulation of double-gate structure device provides a kind of quick Calculation Method.
For fully-depleted double grid MOSFET, when being operated in the subthreshold value zone, device does not also reach strong inversion, and this moment, Potential Distributing was determined that by fixed charge the influence of charge carrier can be ignored.For n type device, the Potential Distributing of raceway groove can be drawn by two-dimentional Poisson equation and boundary condition:
Figure 201110282660X100002DEST_PATH_IMAGE001
（1）
Figure 607029DEST_PATH_IMAGE002
，?
Figure 201110282660X100002DEST_PATH_IMAGE003
，
Figure 281724DEST_PATH_IMAGE004
，?
Figure 238398DEST_PATH_IMAGE006
（2）
Gate oxide electric capacity in the formula
Figure 201110282660X100002DEST_PATH_IMAGE007
;
Figure 605925DEST_PATH_IMAGE008
is gate oxide thickness,
Figure 201110282660X100002DEST_PATH_IMAGE009
and
Figure 785234DEST_PATH_IMAGE010
be respectively the specific inductive capacity of silicon and oxide layer; L is the channel length of double-gated devices;
Figure 201110282660X100002DEST_PATH_IMAGE011
is the thickness of device;
Figure 998040DEST_PATH_IMAGE012
is source voltage terminal, and is the voltage of drain terminal with respect to the source end. is the poor of grid voltage and flat-band voltage.
Electromotive force is become with series expression:
Figure 201110282660X100002DEST_PATH_IMAGE015
（3）
With this formula substitution Poisson equation, can get:
Figure 412896DEST_PATH_IMAGE016
（4）
Wherein,
Figure 201110282660X100002DEST_PATH_IMAGE017
,
Figure 79500DEST_PATH_IMAGE018
The general solution form of formula (4) is
Figure 201110282660X100002DEST_PATH_IMAGE019
; Substitution boundary condition formula (2), can be in the hope of
Figure 95998DEST_PATH_IMAGE020
and
Figure 201110282660X100002DEST_PATH_IMAGE021
:
Figure 531659DEST_PATH_IMAGE022
（5）
Figure 201110282660X100002DEST_PATH_IMAGE023
（6）
Wherein,
Figure 742453DEST_PATH_IMAGE024
（7）
The subthreshold value amplitude of oscillation is defined as:
Figure 201110282660X100002DEST_PATH_IMAGE025
（8）
In the subthreshold value zone; Electric current is main with dissufion current, has
Figure 630775DEST_PATH_IMAGE026
to be proportional to
Figure 201110282660X100002DEST_PATH_IMAGE027
Formula (8) is rewritten as so:
Figure 388647DEST_PATH_IMAGE028
（9）
Wherein
Figure 201110282660X100002DEST_PATH_IMAGE029
;
Figure 741131DEST_PATH_IMAGE030
is Boltzmann constant;
Figure 201110282660X100002DEST_PATH_IMAGE031
is temperature, and
Figure 119897DEST_PATH_IMAGE032
is electron charge.With the expression for electric potential substitution, can get:
Figure 201110282660X100002DEST_PATH_IMAGE033
Figure 370881DEST_PATH_IMAGE034
（10）
Get
Figure 201110282660X100002DEST_PATH_IMAGE035
; Be the coordinate of surface potential minimum point along channel direction; The equivalent barycenter of y power taking;
Figure 248224DEST_PATH_IMAGE036
can get:
Figure 201110282660X100002DEST_PATH_IMAGE037
Figure 658477DEST_PATH_IMAGE038
（11）
During calculating,, higher order term is exceedingly fast, as long as therefore calculate because decaying n=30, just enough.
Description of drawings
Fig. 1 is the double grids MOSFET structural drawing.
Fig. 2 is the variation of the double grids MOSFET subthreshold value amplitude of oscillation with device channel length.
The gate oxide subthreshold value amplitude of oscillation of Fig. 3 different-thickness is with the variation of channel length.
Fig. 4 is that double-gate structure MOSFET subthreshold value amplitude of oscillation analytic model of the present invention is derived flow process.
Embodiment
The present invention compares analytic model result calculated and TCAD simulation software The numerical results.Consider actual conditions, in Fig. 2, choose thickness of detector and be 15,20,25nm, device length is respectively 30,35, and 40,45,50,55,60,65,70,75,80,85,90 nanometers, oxidated layer thickness is 5nm, result of calculation is compared with simulation result.In Fig. 3, choosing device length is 60nm, and thickness is 15,20nm, oxidated layer thickness 3,3.5, and 4,4.5,5 nanometers, result of calculation is compared with simulation result.During calculating, progression is got preceding 30, calculates till the n=30, so can access enough accurately data, and it is fine to see that the result of model and software simulation coincide.

Claims (1)

1. double-gate structure MOSFET subthreshold value amplitude of oscillation model is characterized in that the analytical expression of this model is:
Figure 127067DEST_PATH_IMAGE004
Wherein, Gate oxide electric capacity
Figure 906804DEST_PATH_IMAGE006
;
Figure 364331DEST_PATH_IMAGE008
is gate oxide thickness,
Figure 178703DEST_PATH_IMAGE010
and
Figure 814215DEST_PATH_IMAGE012
be respectively the specific inductive capacity of silicon and oxide layer; L is the channel length of double-gated devices; Q is an electron charge;
Figure 143565DEST_PATH_IMAGE014
;
Figure 654049DEST_PATH_IMAGE016
is thermal voltage;
Figure 322928DEST_PATH_IMAGE018
is the coordinate of surface potential minimum point along channel direction;
Figure 378609DEST_PATH_IMAGE020
, is the thickness of device.
CN201110282660A 2011-09-22 2011-09-22 Double-gate structure MOSFET (metal-oxide semiconductor field-effect transistor) sub-threshold swing analytical model Pending CN102332045A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102779205A (en) * 2012-06-20 2012-11-14 上海华力微电子有限公司 Threshold voltage analytical model of short channel ring fence structure metal oxide semiconductor field effect transistor (MOSFET)
CN104076266A (en) * 2014-06-27 2014-10-01 复旦大学 Method for extracting subthreshold swing of MOSFET of double-material double-gate structure
CN104881520A (en) * 2015-05-04 2015-09-02 复旦大学 Tri-gate Fin FET (fin field effect transistor) potential and sub-threshold oscillation amplitude extracting method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102779205A (en) * 2012-06-20 2012-11-14 上海华力微电子有限公司 Threshold voltage analytical model of short channel ring fence structure metal oxide semiconductor field effect transistor (MOSFET)
CN104076266A (en) * 2014-06-27 2014-10-01 复旦大学 Method for extracting subthreshold swing of MOSFET of double-material double-gate structure
CN104881520A (en) * 2015-05-04 2015-09-02 复旦大学 Tri-gate Fin FET (fin field effect transistor) potential and sub-threshold oscillation amplitude extracting method
CN104881520B (en) * 2015-05-04 2017-12-01 复旦大学 A kind of extracting method of three gate FinFETs potential and subthreshold swing

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