CN102324895B - Pop噪声抑制电路及方法 - Google Patents
Pop噪声抑制电路及方法 Download PDFInfo
- Publication number
- CN102324895B CN102324895B CN 201110182734 CN201110182734A CN102324895B CN 102324895 B CN102324895 B CN 102324895B CN 201110182734 CN201110182734 CN 201110182734 CN 201110182734 A CN201110182734 A CN 201110182734A CN 102324895 B CN102324895 B CN 102324895B
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- CN
- China
- Prior art keywords
- field effect
- effect transistor
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- slowly
- smooth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000001629 suppression Effects 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 20
- 230000003321 amplification Effects 0.000 claims abstract description 23
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 23
- 238000007599 discharging Methods 0.000 claims abstract description 20
- 230000005669 field effect Effects 0.000 claims description 146
- 239000003990 capacitor Substances 0.000 claims description 24
- 230000000630 rising effect Effects 0.000 claims description 16
- 230000007423 decrease Effects 0.000 claims description 12
- 230000005236 sound signal Effects 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 abstract 4
- 238000010586 diagram Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/305—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in case of switching on or off of a power supply
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/181—Low frequency amplifiers, e.g. audio preamplifiers
- H03F3/183—Low frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only
- H03F3/185—Low frequency amplifiers, e.g. audio preamplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45183—Long tailed pairs
- H03F3/45192—Folded cascode stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45475—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using IC blocks as the active amplifying circuit
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110182734 CN102324895B (zh) | 2011-07-01 | 2011-07-01 | Pop噪声抑制电路及方法 |
US13/454,092 US8891787B2 (en) | 2011-07-01 | 2012-04-24 | POP noise suppressing circuit and its method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201110182734 CN102324895B (zh) | 2011-07-01 | 2011-07-01 | Pop噪声抑制电路及方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102324895A CN102324895A (zh) | 2012-01-18 |
CN102324895B true CN102324895B (zh) | 2013-07-31 |
Family
ID=45452578
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201110182734 Expired - Fee Related CN102324895B (zh) | 2011-07-01 | 2011-07-01 | Pop噪声抑制电路及方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8891787B2 (zh) |
CN (1) | CN102324895B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102547530B (zh) * | 2012-02-24 | 2014-07-30 | 四川和芯微电子股份有限公司 | 具有迟滞比较电路的音频静噪系统 |
CN103607681A (zh) * | 2013-11-15 | 2014-02-26 | 上海贝岭股份有限公司 | 一种音频功放启动充电电路及方法 |
CN104238668A (zh) * | 2014-08-29 | 2014-12-24 | 山东超越数控电子有限公司 | 一种消除计算机开关机噪音的方法 |
CN106160680B (zh) * | 2015-04-16 | 2019-04-26 | 展讯通信(上海)有限公司 | 复用的音频功率放大系统及便携式电子设备 |
CN105048980B (zh) | 2015-08-18 | 2018-09-18 | 矽力杰半导体技术(杭州)有限公司 | 一种d类音频放大器 |
US11223330B1 (en) * | 2020-07-10 | 2022-01-11 | Nuvoton Technology Corporation | Dynamic suppression of pop and click noise in an audio driver |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5363062A (en) * | 1992-05-22 | 1994-11-08 | Sgs-Thomson Microelectronics S.R.L. | Audio amplifier on-off control circuit |
US5642074A (en) * | 1995-10-13 | 1997-06-24 | National Semiconductor Corporation | Amplifier circuit with reduced turn-on and turn-off transients |
EP0809355A2 (de) * | 1996-05-22 | 1997-11-26 | BECKER GmbH | Verstärkerschaltung |
CN1934783A (zh) * | 2004-04-21 | 2007-03-21 | 罗姆股份有限公司 | 信号输出电路、使用其的音频信号输出装置、电子设备 |
CN202121759U (zh) * | 2011-07-01 | 2012-01-18 | 四川和芯微电子股份有限公司 | Pop噪声抑制电路 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101375534B (zh) * | 2005-06-29 | 2012-03-21 | 美国亚德诺半导体公司 | 用于音频设备的改进的充/放电控制电路 |
US7859332B2 (en) * | 2006-07-25 | 2010-12-28 | Semiconductor Components Industries, Llc | Amplification circuit and method therefor |
JP2009218822A (ja) * | 2008-03-10 | 2009-09-24 | Toshiba Corp | ミュート回路 |
-
2011
- 2011-07-01 CN CN 201110182734 patent/CN102324895B/zh not_active Expired - Fee Related
-
2012
- 2012-04-24 US US13/454,092 patent/US8891787B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5363062A (en) * | 1992-05-22 | 1994-11-08 | Sgs-Thomson Microelectronics S.R.L. | Audio amplifier on-off control circuit |
US5642074A (en) * | 1995-10-13 | 1997-06-24 | National Semiconductor Corporation | Amplifier circuit with reduced turn-on and turn-off transients |
EP0809355A2 (de) * | 1996-05-22 | 1997-11-26 | BECKER GmbH | Verstärkerschaltung |
CN1934783A (zh) * | 2004-04-21 | 2007-03-21 | 罗姆股份有限公司 | 信号输出电路、使用其的音频信号输出装置、电子设备 |
CN202121759U (zh) * | 2011-07-01 | 2012-01-18 | 四川和芯微电子股份有限公司 | Pop噪声抑制电路 |
Also Published As
Publication number | Publication date |
---|---|
US8891787B2 (en) | 2014-11-18 |
CN102324895A (zh) | 2012-01-18 |
US20130003988A1 (en) | 2013-01-03 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP02 | Change in the address of a patent holder |
Address after: 610041 Sichuan city of Chengdu province high tech Zone Kyrgyzstan Road 33 block A No. 9 Patentee after: IPGoal Microelectronics (Sichuan) Co., Ltd. Address before: 402 room 7, building 610041, incubator Park, hi tech Zone, Sichuan, Chengdu Patentee before: IPGoal Microelectronics (Sichuan) Co., Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201202 Address after: Room 705, building 2, No. 515, No. 2 street, Baiyang street, Qiantang New District, Hangzhou City, Zhejiang Province Patentee after: Zhejiang zhexin Technology Development Co., Ltd Address before: 610041 Sichuan city of Chengdu province high tech Zone Kyrgyzstan Road 33 block A No. 9 Patentee before: IPGoal Microelectronics (Sichuan) Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210420 Address after: 835221 Electronic Information Industrial Park, Horgos Industrial Park, Yili Kazak Autonomous Prefecture, Xinjiang Uygur Autonomous Region (West of Beijing Road and north of Suzhou Road) Patentee after: Xinjiang xintuan Technology Group Co.,Ltd. Address before: Room 705, building 2, No. 515, No. 2 street, Baiyang street, Qiantang New District, Hangzhou City, Zhejiang Province Patentee before: Zhejiang zhexin Technology Development Co., Ltd |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130731 Termination date: 20210701 |