CN102324388A - Method for forming photoresistance layer - Google Patents
Method for forming photoresistance layer Download PDFInfo
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- CN102324388A CN102324388A CN201110257355A CN201110257355A CN102324388A CN 102324388 A CN102324388 A CN 102324388A CN 201110257355 A CN201110257355 A CN 201110257355A CN 201110257355 A CN201110257355 A CN 201110257355A CN 102324388 A CN102324388 A CN 102324388A
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- layer
- silicon oxynitride
- photoresistance pattern
- photoresist layer
- conductive layer
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Abstract
The invention relates to a method for forming a photoresistance layer, which comprises the following steps: forming a conducting layer; forming a silicon oxynitride layer on the surface of the conducting layer; cleaning the surface of the silicon oxynitride layer by utilizing an organic solvent; and forming a photoresistance pattern on the surface of the silicon oxynitride layer. By using the method provided by the invention, the surface matching property of a silicon oxide layer and the photoresistance pattern can be improved, and the generation of a cavity defect of the photoresistance pattern is avoided.
Description
Technical field
The present invention relates to a kind of method that forms photoresist layer, relate in particular to the method that a kind of surface at silicon oxynitride (SION) layer forms photoresist layer.
Background technology
Prepare in the process at the conventional semiconductor device; In the step of etching sheet metal, form silicon oxynitride layer earlier on the surface of metal level usually, then form photoresist layer on the surface of silicon oxynitride layer; With said photoresist layer patterning, utilize the said metal level of photoresistance pattern etch then.Said silicon oxynitride layer is used to protect said metal level, thereby the metal level zone of avoiding needing to keep is etched away.
Yet; Form in the process of photoresist layer on the surface of silicon oxynitride layer; Because the surface characteristic mismatch (property mismatching) of said silicon oxynitride layer and said photoresist layer causes said photoresist layer to form cavity blemish (Void defeat) easily, like Fig. 1; The photoresistance pattern that is formed by the said photoresist layer that cavity blemish arranged also is easy to generate defective, and is shown in Figure 2.Because the existence in cavity on said photoresist layer and the photoresistance pattern, after said metal level is etched, be easy to generate distortion (deformation) with the metal level of said empty corresponding position, as shown in Figure 3, thus cause stability of semiconductor device decline.
Summary of the invention
The object of the present invention is to provide a kind of method that can avoid the formation photoresist layer of photoresist layer cavity blemish.
A kind of method that forms photoresist layer comprises the steps: to form conductive layer; Surface at said conductive layer forms silicon oxynitride layer; Utilize organic solvent to clean the surface of said silicon oxynitride layer; Surface at said silicon oxynitride layer forms the photoresistance pattern.
As the preferred technique scheme, said conductive layer is the composite bed of titanium/titanium nitride/aluminium/titanium/titanium nitride, and the thickness of aluminium is 2000 dusts in the composite bed of said titanium/titanium nitride/aluminium/titanium/titanium nitride, and the thickness of said silicon oxynitride layer is 320 dusts.
As the preferred technique scheme, said organic solvent is the EKC organic solvent.
As optional technical scheme, form said photoresistance pattern after, to the develop back inspection of said photoresistance pattern; Be mask then with said photoresistance pattern, the said conductive layer of dry etching; Then, adopt the EKC organic solvent to clean said photoresistance pattern and conductive layer; Said conductive layer after the etching is carried out checking after the etching.
Compared with prior art; The method of formation photoresist layer of the present invention; Before the surface of silicon oxynitride layer forms the photoresistance pattern, adopt the EKC organic solvent to clean said silicon oxynitride layer earlier, thereby change the surface characteristic of silicon oxynitride layer; Improve the surperficial matching of silicon oxynitride layer and photoresistance pattern, avoid the generation of photoresistance pattern cavity blemish.
Description of drawings
Fig. 1 is the sketch map that adopts the cavity blemish of the photoresist layer that the method for prior art forms.
Fig. 2 is the sketch map that adopts the photoresistance pattern of the described photoresist layer formation of Fig. 1.
Fig. 3 is the sketch map behind the employing photoresistance pattern etch metal level shown in Figure 2.
Fig. 4 is the flow chart of the method for formation photoresist layer of the present invention.
Fig. 5 is the sketch map of the photoresistance pattern of employing method formation of the present invention.
Fig. 6 is the sketch map behind the employing photoresistance pattern etch conductive layer shown in Figure 5.
Embodiment
The method of formation photoresist layer of the present invention; Before the surface of silicon oxynitride layer forms the photoresistance pattern; Adopt the EKC organic solvent to clean said silicon oxynitride layer earlier; Thereby change the surface characteristic of silicon oxynitride layer, improve the surperficial matching of silicon oxynitride layer and photoresistance pattern, avoid the generation of photoresistance pattern cavity blemish.For making the object of the invention, technical scheme and advantage clearer, the present invention is made further detailed description below in conjunction with accompanying drawing.
Fig. 4 is the flow chart of the method for formation photoresist layer of the present invention.The method of formation photoresist layer of the present invention comprises the steps:
Form conductive layer, preferred, the composite bed that said conductive layer can titanium (TI)/titanium nitride (TIN)/aluminium (AL)/titanium/titanium nitride.The thickness of aluminium can be 2000 dusts in the said composite bed.
Surface at said conductive layer forms silicon oxynitride layer.Preferably, the thickness of said silicon oxynitride layer is 320 dusts.Said nitrogen silicon oxynitride layer is used to protect said conductive layer, thereby the conductive layer area of avoiding needing to keep is etched away.
Utilize organic solvent to clean the surface of said silicon oxynitride layer.Preferably, adopt the EKC organic solvent to clean.The surface of said silicon oxynitride layer is after said organic solvent cleans, and surface characteristic changes, thus the surperficial matching of raising and photoresist layer.
Surface at said silicon oxynitride layer forms photoresist layer, then with said photoresist layer patterning.The step of said photoresist layer patterning can be adopted the method for prior art, repeat no more at this.
After forming said photoresistance pattern, to said photoresistance pattern develop back inspection (After-Develop Inspection, ADI).
With said photoresistance pattern is mask, the said conductive layer of dry etching.
Adopt the EKC organic solvent to clean (solvent clean) said photoresistance pattern and said conductive layer.
To said conductive layer carry out inspection after the etching (After-Etch Inspection, AEI).
Compared with prior art, the method for formation photoresist layer of the present invention is before the surface of silicon oxynitride layer forms the photoresistance pattern; Adopt the EKC organic solvent to clean said silicon oxynitride layer earlier; Thereby change the surface characteristic of silicon oxynitride layer, improve the surperficial matching of silicon oxynitride layer and photoresistance pattern, avoid the generation of photoresistance pattern cavity blemish; As 5, shown in Figure 6; Wherein, Fig. 5 is the sketch map behind the employing photoresistance pattern etch metal level shown in Figure 5 for the sketch map of the photoresistance pattern of employing method formation of the present invention, Fig. 6.
Under situation without departing from the spirit and scope of the present invention, can also constitute many very embodiment of big difference that have.Should be appreciated that except like enclosed claim limited, the invention is not restricted at the specific embodiment described in the specification.
Claims (9)
1. a method that forms photoresist layer is characterized in that, comprises the steps:
Form conductive layer;
Surface at said conductive layer forms silicon oxynitride layer;
Utilize organic solvent to clean the surface of said silicon oxynitride layer;
Surface at said silicon oxynitride layer forms the photoresistance pattern.
2. the method for formation photoresist layer according to claim 1 is characterized in that, said conductive layer is the composite bed of titanium/titanium nitride/aluminium/titanium/titanium nitride.
3. the method for formation photoresist layer according to claim 2 is characterized in that, the thickness of aluminium is 2000 dusts in the composite bed of said titanium/titanium nitride/aluminium/titanium/titanium nitride.
4. the method for formation photoresist layer according to claim 1 is characterized in that, the thickness of said silicon oxynitride layer is 320 dusts.
5. the method for formation photoresist layer according to claim 1 is characterized in that, said organic solvent is the EKC organic solvent.
6. the method for formation photoresist layer according to claim 1 is characterized in that, form said photoresistance pattern after, to the develop back inspection of said photoresistance pattern.
7. the method for formation photoresist layer according to claim 6 is characterized in that, develops after the inspection, and be mask with said photoresistance pattern, the said conductive layer of dry etching.
8. the method for formation photoresist layer according to claim 7 is characterized in that, behind the said conductive layer of etching, adopts the EKC organic solvent to clean said photoresistance pattern and conductive layer.
9. the method for formation photoresist layer according to claim 9 is characterized in that, the said conductive layer after the etching is carried out checking after the etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110257355.5A CN102324388B (en) | 2011-09-01 | 2011-09-01 | Method for forming photoresistance layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110257355.5A CN102324388B (en) | 2011-09-01 | 2011-09-01 | Method for forming photoresistance layer |
Publications (2)
| Publication Number | Publication Date |
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| CN102324388A true CN102324388A (en) | 2012-01-18 |
| CN102324388B CN102324388B (en) | 2017-02-08 |
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| CN201110257355.5A Active CN102324388B (en) | 2011-09-01 | 2011-09-01 | Method for forming photoresistance layer |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6303477B1 (en) * | 2001-04-04 | 2001-10-16 | Chartered Semiconductor Manufacturing Ltd | Removal of organic anti-reflection coatings in integrated circuits |
| CN1624882A (en) * | 2003-12-05 | 2005-06-08 | 中芯国际集成电路制造(上海)有限公司 | Method for improving foot defect defect in semiconductor manufacturing process |
| CN101908478A (en) * | 2009-06-05 | 2010-12-08 | 华映视讯（吴江）有限公司 | Manufacturing method of copper electrode structure and application thereof |
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2011
- 2011-09-01 CN CN201110257355.5A patent/CN102324388B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6303477B1 (en) * | 2001-04-04 | 2001-10-16 | Chartered Semiconductor Manufacturing Ltd | Removal of organic anti-reflection coatings in integrated circuits |
| CN1624882A (en) * | 2003-12-05 | 2005-06-08 | 中芯国际集成电路制造(上海)有限公司 | Method for improving foot defect defect in semiconductor manufacturing process |
| CN101908478A (en) * | 2009-06-05 | 2010-12-08 | 华映视讯（吴江）有限公司 | Manufacturing method of copper electrode structure and application thereof |
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| CN102324388B (en) | 2017-02-08 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140430 |
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Effective date of registration: 20140430 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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