CN102315196A

CN102315196A - Multigrain stack encapsulation structure

Info

Publication number: CN102315196A
Application number: CN2010102315101A
Authority: CN
Inventors: 王伟; 刘安鸿; 黄祥铭; 杨佳达; 李宜璋
Original assignee: Chipmos Technologies Inc
Current assignee: Chipmos Technologies Inc
Priority date: 2010-07-08
Filing date: 2010-07-08
Publication date: 2012-01-11
Anticipated expiration: 2030-07-08
Also published as: CN102315196B

Abstract

The invention discloses a multigrain stack encapsulation structure, which comprises a substrate, a first grain, a plurality of metal lead wires, a second grain and a sealing wax body, wherein a grain setting region is defined on the upper surface of the substrate and a plurality of connection points are arranged on the upper surface of the substrate; the first grain has an active face and a back face; the back face is formed on the grain setting region; a plurality of first bonding pads are arranged on the active face of the first grain; a first boss is formed on each first bonding pad; the plurality of metal lead wires are used for connecting the first bosses to the connection points; the second grain has an active face and a back face; a plurality of bonding pads are arranged on the active face of the second grain; a second boss is formed on each second bonding pad; the second grain is connected with the first grain in a manner that the active face of the second grain faces the active face of the first grain, so that the second bosses are correspondingly connected with the metal lead wires and the first bosses respectively; and the sealing wax body is used for covering the substrate, the first grain, the second grain and the metal lead wires.

Description

Polycrystalline grain stack package structure

[technical field]

The invention relates to a kind of polycrystalline grain stack package structure; Particularly relevant for a kind of wafer level stack encapsulating structure that uses plain conductor to connect projection.

[background technology]

In information-intensive society now; Successful exploitation along with portable product; The user pursues high-speed, high-quality, polyfunctional portable electronic product, for example: mobile computer (Note Book), 3G mobile, PDA(Personal Digital Assistant) and game machine (Video Game) etc.With regard to product appearance, the design of portable electronic product is to stride forward towards light, thin, short, little trend.In order to achieve the above object; Develop that polycrystalline grain stack architecture be necessary trend; And polycrystalline grain stack architecture promptly is under identical package body sizes, and a plurality of crystal grain are joined to merging with the mode of storehouse to be electrically connected, with capacity or the increase more function that increases internal memory.

Progress along with processing procedure; The intercrystalline bus of in the portable system each (Bus) necessary operations speed and frequency range are increasing; The speed of the bus of system and frequency range then are the technology that depends on encapsulation (Package), particularly at die package system in package (the System in Package together with multiple difference in functionality; SiP).Therefore; When design polycrystalline grain stack architecture; Have transmission speed faster, shorter transmission path and better electrical characteristic; And further dwindle the size and the area of die package structure, thereby make the crystal grain stack architecture be widely used in various electronic products in, and become following main product.

And in the manufacture process of implementing, the encapsulation of polycrystalline grain stack architecture but is faced with challenge.At first, also bigger along with the performance boost of various consumer products for the capacity requirement of internal memory, therefore, in the time will making jumbo Dram (DRAM), for example: the DRAM of 4Gb capacity; Just need four 1Gb DRAM be packaged together, shown in Figure 13 A; If will make the DRAM of 8Gb capacity; Just need eight 1Gb DRAM be packaged together.Increase along with number of die; When using traditional plain conductor to be used as intercrystalline connection lead (trace); Except the increase of meeting because of access path; Or the length that in manufacture process, make to connect lead is inconsistent, and can cause the signal transmission speed to reduce or effects such as generation time delay, and then causes system can't operate or cause outside the problem such as system access error in data; When using traditional plain conductor to be used as the connection lead of a plurality of crystal grain storehouses; Also face another problem; It is exactly the problem of package dimension; That is to say that the height of a plurality of crystal grain stack architectures and area are restricted, and this is to use also traditional plain conductor to be used as another problem of intercrystalline a plurality of crystal grain storehouses.

And in order to solve this problem, use the heavy Distribution Layer of circuit (RDL) to reach and shorten the access path between polycrystalline grain storehouse, also can overcome the problem of a plurality of crystal grain stack height simultaneously effectively, shown in Figure 13 B.Yet the high manufacturing cost of the heavy Distribution Layer of circuit (RDL) lets the stepping back of many high performance product news.

Therefore, in polycrystalline grain stack architecture, keep excellent electric characteristics and the righttest size before topic down, manufacture original completion as how minimum, be one important and need the subject under discussion that solves.

[summary of the invention]

In order to solve in the background technology; About the crystal grain in the polycrystalline grain stack architecture long and connect problems such as the length of lead is inconsistent with the intercrystalline lead that is connected; The present invention provides a kind of wafer level stack encapsulating structure that uses plain conductor to connect projection; Its main purpose is providing the encapsulation of polycrystalline grain storehouse, and it can be controlled crystal grain with stack architecture and be connected the isometric demand of lead with intercrystalline, makes the polycrystalline grain stack architecture of accomplishing after encapsulating can have preferable electrical characteristic and the reliability of getting.

Another main purpose of the present invention is providing a kind of connected mode that traditional metal lead and being connected of projection is used as polycrystalline grain stack architecture of using, and is used for replacing the heavy Distribution Layer (RDL) of circuit, to reduce the manufacturing cost of polycrystalline grain stack architecture.

Another main purpose of the present invention; A kind of use traditional metal lead and silicon through hole technology (Trough-Silicon-Vias is being provided; TSVs) connection is used as the connected mode of polycrystalline grain stack architecture; The integrated level of packaging height be can reduce effectively, and service speed and frequency range increased simultaneously with the increase storehouse.

A main purpose in addition of the present invention; Provide a kind of use the connected mode that traditional metal lead and being connected of projection is used as polycrystalline grain stack architecture or use traditional metal lead and silicon through hole technological be connected the connected mode that is used as polycrystalline grain stack architecture, to form system-level encapsulating structure.

According to above-mentioned purpose, the present invention at first provides a kind of polycrystalline grain stack package structure, comprises a substrate, has a upper surface and a lower surface, define a crystal grain setting area on its upper surface and dispose a plurality of contacts, and contact is positioned at outside the crystal grain setting area; One first crystal grain has the back side of an active face and relative active face, and first crystal grain is arranged at the crystal grain setting area with the back side, disposes on its active face and forms one first projection on a plurality of first weld pads and first weld pad; Many strip metals lead is in order to connect first projection to contact; One second crystal grain; Back side with an active face and relative active face; Dispose a plurality of second weld pads on its active face; Form one second projection on second weld pad, second crystal grain is to engage first crystal grain with active face in the face of the active face of first crystal grain, makes the corresponding respectively plain conductor and first projection of connecting of second projection; One adhesive body is in order to covered substrate, first crystal grain, second crystal grain and plain conductor.

The present invention then provides a kind of polycrystalline grain stack package structure, comprises a substrate, has a upper surface and a lower surface, defines a crystal grain setting area on its upper surface and disposes a plurality of contacts, and contact is positioned at outside the crystal grain setting area; One first crystal grain has the back side of an active face and relative active face, and first crystal grain is arranged at the crystal grain setting area with the back side, disposes on its active face and forms one first projection on a plurality of first weld pads and first weld pad; One second crystal grain; A back side and a plurality of straight-through silicon wafer embolism with an active face and relative active face; Straight-through silicon wafer embolism runs through second crystal grain so that electrically connect each other between the active face and the back side; Form a plurality of second projections on its active face and connect straight-through silicon wafer embolism respectively, wherein second crystal grain engages first crystal grain with the back side in the face of the active face of first crystal grain, makes corresponding respectively first projection that connects of straight-through silicon wafer embolism; Many strip metals lead is in order to connect second projection to contact; One the 3rd crystal grain; A back side and a plurality of straight-through silicon wafer embolism with an active face and relative active face; Straight-through silicon wafer embolism runs through the 3rd crystal grain so that electrically connect each other between the active face and the back side; Form a plurality of the 3rd projections on its active face and connect straight-through silicon wafer embolism respectively, wherein the 3rd crystal grain with active face in the face of the active face of second crystal grain to engage second crystal grain, make the corresponding respectively plain conductor and second projection of connecting of the 3rd projection; One the 4th crystal grain; Back side with an active face and relative active face; Dispose a plurality of second weld pads on its active face; And form one the 4th projection on second weld pad, the back side that the 4th crystal grain is faced the 3rd crystal grain with active face engages the 3rd crystal grain, makes the corresponding respectively straight-through silicon wafer embolism that connects the 3rd crystal grain of the 4th projection; One adhesive body is in order to covered substrate, first crystal grain, second crystal grain, the 3rd crystal grain, the 4th crystal grain and plain conductor.

The present invention provides a kind of polycrystalline grain stack package structure again; Comprise a substrate, have a upper surface and a lower surface, define a crystal grain setting area on its upper surface and dispose a plurality of contacts; Form a groove in the crystal grain setting area, and contact is positioned at outside the crystal grain setting area; One first crystal grain has the back side of an active face and relative active face, and first crystal grain is arranged in the groove with the back side, disposes on its active face and forms one first projection on a plurality of first weld pads and first weld pad; Many strip metals lead is in order to connect first projection to contact; One second crystal grain; Back side with an active face and relative active face; Dispose a plurality of second weld pads on its active face; Form one second projection on second weld pad, the active face that second crystal grain is faced first crystal grain with active face engages first crystal grain, makes the corresponding respectively plain conductor and first projection of connecting of second projection; One adhesive body is in order to covered substrate, first crystal grain, second crystal grain and plain conductor.

The present invention then provides a kind of polycrystalline grain stack package structure again; Comprise a substrate, have a upper surface and a lower surface, define a crystal grain setting area on its upper surface and dispose a plurality of contacts; Form a groove in the crystal grain setting area, contact is positioned at outside the crystal grain setting area; One first crystal grain has the back side of an active face and relative active face, and first crystal grain is arranged in the groove with the back side, disposes on its active face and forms one first projection on a plurality of first weld pads and first weld pad; One second crystal grain; A back side and a plurality of straight-through silicon wafer embolism with an active face and relative active face; Straight-through silicon wafer embolism runs through second crystal grain so that electrically connect each other between the active face and the back side; Form a plurality of second projections on its active face and connect straight-through silicon wafer embolism respectively, wherein second crystal grain engages first crystal grain with the back side in the face of the active face of first crystal grain, makes corresponding respectively first projection that connects of straight-through silicon wafer embolism; Many strip metals lead is in order to connect said second projection to contact; One the 3rd crystal grain; A back side and a plurality of straight-through silicon wafer embolism with an active face and relative active face; Straight-through silicon wafer embolism runs through the 3rd crystal grain so that electrically connect each other between the active face and the back side; Form a plurality of the 3rd projections on its active face and connect straight-through silicon wafer embolism respectively, wherein the 3rd crystal grain engages second crystal grain with active face in the face of the active face of second crystal grain, makes the corresponding respectively plain conductor and second projection of connecting of the 3rd projection; One the 4th crystal grain; Back side with an active face and relative active face; Dispose a plurality of second weld pads on its active face; And form one the 4th projection on second weld pad, the back side that the 4th crystal grain is faced the 3rd crystal grain with active face engages the 3rd crystal grain, makes the corresponding respectively straight-through silicon wafer embolism that connects the 3rd crystal grain of the 4th projection; One adhesive body is in order to covered substrate, first crystal grain, second crystal grain, the 3rd crystal grain, the 4th crystal grain and plain conductor.

The present invention then provides a kind of polycrystalline grain stack package structure again, comprises a substrate, has a upper surface and a lower surface, defines a crystal grain setting area on its upper surface and disposes a plurality of contacts, and contact is positioned at outside the crystal grain setting area; One first crystal grain has the back side of an active face and relative active face, and first crystal grain is arranged at the crystal grain setting area with the back side, disposes on the outer peripheral areas of its active face and forms one first projection on a plurality of first weld pads and first weld pad; Many strip metals lead is in order to connect said first projection to contact; One second crystal grain; A back side and a plurality of straight-through silicon wafer embolism with an active face and relative active face; Each straight-through silicon wafer embolism runs through second crystal grain so that electrically connect each other between the active face and the back side; And each straight-through silicon wafer embolism forms one first end and forms one second end in the back side in active face; And on second end of straight-through silicon wafer embolism at least partly, form one second projection respectively, wherein second crystal grain engages first crystal grain with the back side in the face of the active face of first crystal grain, makes the corresponding respectively plain conductor and first projection of connecting of second projection; One the 3rd crystal grain; A back side and a plurality of straight-through silicon wafer embolism with an active face and relative active face; Each straight-through silicon wafer embolism runs through the 3rd crystal grain so that electrically connect each other between the active face and the back side; And each straight-through silicon wafer embolism forms one first end and forms one second end in the back side in active face; And on second end of straight-through silicon wafer embolism at least partly, form one the 3rd projection respectively, wherein the 3rd crystal grain engages second crystal grain with the back side in the face of the active face of second crystal grain, makes corresponding respectively first end that connects the straight-through silicon wafer embolism of second crystal grain of the 3rd projection of the 3rd crystal grain; One adhesive body is in order to covered substrate, first crystal grain, second crystal grain, the 3rd crystal grain and plain conductor.

[description of drawings]

Fig. 1 is the wafer sketch map of a completion FEOL;

Fig. 2 A to Fig. 2 I is the generalized section of an embodiment of polycrystalline grain stack package structure of the present invention;

Fig. 3 is the generalized section of another embodiment of polycrystalline grain stack package structure of the present invention;

Fig. 4 is the generalized section of an embodiment again of polycrystalline grain stack package structure of the present invention;

Fig. 5 A to Fig. 5 F is the generalized section of an embodiment of the polycrystalline grain stack package structure with straight-through silicon wafer embolism of the present invention;

Fig. 6 is the generalized section of another embodiment of the polycrystalline grain stack package structure with straight-through silicon wafer embolism of the present invention;

Fig. 7 is the generalized section of an embodiment again with polycrystalline grain stack package structure of straight-through silicon wafer embolism of the present invention;

Fig. 8 A and Fig. 8 D are the generalized sections that polycrystalline grain stack package structure of the present invention forms system-in-package structure;

Fig. 9 is the generalized section of an embodiment again that polycrystalline grain stack package structure of the present invention forms system-in-package structure;

Figure 10 A to Figure 10 D is the generalized section of an embodiment again with polycrystalline grain stack package structure of straight-through silicon wafer embolism of the present invention;

Figure 11 is the generalized section of the another embodiment of the polycrystalline grain stack package structure with straight-through silicon wafer embolism of the present invention;

Figure 12 is the generalized section of an embodiment again that the polycrystalline grain stack package structure with straight-through silicon wafer embolism of the present invention forms system-in-package structure; And

Figure 13 A and Figure 13 B are the generalized sections that shows the prior art of polycrystalline grain stack package structure.

[primary clustering symbol description]

Wafer 10

Crystal grain 100,100a, 100b

Crystal grain active face 101

The crystal grain back side 103

Weld pad 110

Sealant 140

Projection

20,20a, 20b

Substrate 200

Upper surface of base plate 210

Base lower surface 220

The external connector 230 of base lower surface

Upper surface of base plate contact 240

Substrate upper groove 250

Tin ball 260

Cover layer 280

Plain conductor 30

Crystal grain 300,300a, 300b with straight-through silicon wafer embolism

The active face 301 of the crystal grain of straight-through silicon wafer embolism

The back side 303 of the crystal grain of straight-through silicon wafer embolism

Straight-through silicon wafer embolism 330

First end 331 of straight-through silicon wafer embolism

Second end 333 of straight-through silicon wafer embolism

Projection 40

Stack architecture 400A

Crystal grain 400,400a, 400b with straight-through silicon wafer embolism

The active face 401 of the crystal grain of straight-through silicon wafer embolism

The back side 403 of the crystal grain of straight-through silicon wafer embolism

Straight-through silicon wafer embolism 450

First end 451 of straight-through silicon wafer embolism

Second end 453 of straight-through silicon wafer embolism

The projection 455,457 of straight-through silicon wafer embolism

Projection

50,50a, 50b

Sealant 80

Adhesive body 90

Control crystal grain 500

The weld pad 510 of control crystal grain

Crystal grain 600

Weld pad 610

Projection 70

[embodiment]

The present invention is a kind of wafer level stack encapsulating structure that uses plain conductor to connect projection in this direction of inquiring into; Its main purpose is providing the encapsulation of polycrystalline grain storehouse to come the isometric demand of control connection lead with stack architecture, makes the polycrystalline grain stack architecture of accomplishing after encapsulating can have preferable electrical characteristic and the reliability of getting.In order to understand the present invention up hill and dale, detailed step and composition thereof will be proposed in following description.Apparently, on the one hand, execution of the present invention does not limit the mode of crystal grain storehouse, more particularly the various crystal grain storehouse modes had the knack of of this skill field person.On the other hand, the detailed step of back-end process such as well-known crystal grain generation type and crystal grain thinning is not described in the details, with the restriction of avoiding causing the present invention unnecessary.Yet, for preferred embodiment of the present invention, can describe in detail as follows, yet except these were described in detail, the present invention can also be implemented among other the embodiment widely, and scope of the present invention constrained not, its with after claim be as the criterion.

At first; Please refer to Fig. 1; In the semiconductor packing process in modern times; All be that a wafer 10 (wafer) of having accomplished FEOL (Front End Process) is cut processing procedure (sawingprocess) to form many crystal grain 100, wherein all dispose a plurality of weld pads 110 on the active face of each crystal grain; And in an embodiment of the present invention, a plurality of weld pads 110 that disposed on the active face of each crystal grain are positioned at the middle section of active face, and are as shown in Figure 1.

Then, please refer to Fig. 2 A～2H, is the generalized section of an embodiment of formation polycrystalline grain stack architecture process of the present invention.At first, shown in Fig. 2 A, crystal grain 100 has active face 101 and opposing backside surface 103, and disposes a plurality of weld pads 110 on the active face 101, and these a plurality of weld pads 110 are positioned at the middle section of crystal grain 100 active faces 101.Then, please refer to Fig. 2 B, on weld pad 110, form a projection 20, particularly a kind of tie lines projection (STUD BUMP), and this tie lines projection forms a projection on weld pad 110 with routing technology sintering.Will stress that at this projection 20 can be a kind of plated bumps, electroless plating projection, tie lines projection, conducting polymer projection or metal composite projection, to this, the present invention does not limit.And the material of projection 20 can be selected from following group: copper, gold, silver, indium, nickel/gold, nickel/palladium/gold, copper/nickel/gold, copper/gold, aluminium, conducting polymer composite and combination thereof etc.At this moment, formed the crystal grain 100 of plural number completion projection 20 processing procedure.Follow again; Please refer to Fig. 2 C; Be that the back side 103 like the first crystal grain 100a of Fig. 2 B is sticked in adhesion layer 120 on the upper surface 210 of substrate 200, wherein, definition has a crystal grain setting area (figure does not show) and disposes a plurality of contacts 240 on the upper surface 210 of substrate 200 of the present invention; These contacts 240 are positioned at outside the crystal grain setting area, and the first crystal grain 100a sticks in the crystal grain setting area of substrate 200 with adhesion layer 120.In addition, on the lower surface 220 of substrate 200, then dispose a plurality of external connector 230, and can further dispose the electric connection assembly on the external connector 230, for example: tin ball (being shown among Fig. 4), with usefulness as external electric connection.Moreover, please refer to Fig. 2 D, be that the first projection 20a on the first crystal grain 100a among Fig. 2 C is electrically connected on the contact 240 on the substrate 200 through many strip metals lead 30, shown in 2D and 2E figure (wherein, Fig. 2 D is the top view of Fig. 2 E).And form the mode of this plain conductor 30, can select backhander line processing procedure to carry out.Then, please refer to Fig. 2 F, be with second a crystal grain 100b like Fig. 2 B to cover the first crystal grain 100a of crystalline substance (flip chip) mode index map 2E, make the corresponding respectively first projection 20a that is connected to the plain conductor 30 and the first crystal grain 100a of the second projection 20b.Therefore, the first crystal grain 100a and the second crystal grain 100b form and electrically connect, and further are electrically connected to substrate 200 through plain conductor 30.

In addition; What specify is that the projection 20 of working as among the aforesaid embodiment is a kind of flexible metallic material; When gold for example, soft that can be through the flexible metal, high tenacity and the good copline characteristic (compliancy) of complying with make when carrying out polycrystalline grain vertical stack; Can get at the joint interface of electrode (being projection) to absorb because thermal coefficient of expansion does not match between metal electrode material; And, also can effectively go to overcome the problem of roughness between metal electrode material, so can increase the processing procedure of polycrystalline grain vertical stack and the reliability of product effectively in horizontal and vertical distortion that produces (Deformation).

Please refer to Fig. 2 G again; Optionally carry out the filling processing procedure of a macromolecular material; Make the space of macromolecular material filling between the active face 101 of two

crystal grain

100a, 100b, to form a sealant 80, with firm stack architecture and the electrical contact protective effect is provided.This filling processing procedure can after accomplishing Fig. 2 F, use the high pressure mode with the space of macromolecular material filling between

crystal grain

100a, 100b in, also can before the chip bonding second crystal grain 100b, be coated with earlier or be attached on the first crystal grain 100a of Fig. 2 E.And this sealant 80 can be selected from following group: non-conductive adhesive (non-conductive paste; NCP), non-conductive film (non-conductive film; NCF), anisotropic conductive (anisotropicconductive paste; ACP), anisotropy conducting film (anisotropic conductive film; ACF), underfill (underfill), non-current underfill (non-flow underfill), B rank glue (B-stage resin), molding compounds, FOW (film-over-wire) film etc.

At last, carry out a manufacture procedure of adhesive again, to form an adhesive body 90, in order to covered substrate 200, the first crystal grain 100a, the second crystal grain 100b and plain conductor 30.So far, promptly accomplish the polycrystalline grain stack package structure of present embodiment, shown in Fig. 2 H.

In the polycrystalline grain stack package structure of present embodiment; 100 uses of a plurality of crystal grain are covered crystal type a plurality of weld pads 110 on the active face 101 of each crystal grain 100 are linked together accordingly, and are connected to the contact 240 on substrate 200 upper surfaces 210 through plain conductor 30.Clearly; In the present embodiment; The identical length that connects each weld pad 110 pairing each the contact 240 employed plain conductor 30 to substrate 200 upper surfaces 210 on the active face 101 of each crystal grain 100 with; Therefore can overcome among Figure 13 A, different crystal grain use the plain conductor of different length to electrically connect and cause signal to transmit effects such as generation time delay, and then cause system can't operate or cause problems such as system access error in data.Also therefore, present embodiment has preferable electrical characteristic and reliability.

Then; Please refer to shown in Fig. 2 I; Be in the structure of substrate 200, to be embedded into into a control crystal grain 500; And will control crystal grain 500 and substrate 200 formation electric connections, the active face that makes control crystal grain 500 is through circuits in the substrate 200 and a plurality of external connector that are disposed at substrate 200 lower surfaces 220 230 electric connections; In addition, the mode that is embedded into of control crystal grain 500 can be in the multilayer circuit board forming process, be about to this control crystal grain 500 and be disposed in the substrate 200, and be to utilize known techniques to form owing to will control that crystal grain 500 is embedded in the substrate 200, so no longer detailed description.Clearly, the difference of Fig. 2 I and Fig. 2 H exists: the control crystal grain 500 that further configuration one is embedded in substrate 200 in Fig. 2 H, all the other connection procedures that form the first crystal grain 100a and the second crystal grain 100b are all identical with Fig. 2 C to Fig. 2 H, therefore repeat no more it.

Please refer to Fig. 3, it is the generalized section of another embodiment of polycrystalline grain stack architecture of the present invention.In present embodiment; After the structure of accomplishing aforesaid Fig. 2 E; Further form another tie lines projection 40 on the contact point of each strip metal lead 30 and first projection 20a electric connection; Tie lines projection 40 forms a projection and pressure welding on the tie point of plain conductor 30 and the first projection 20a with routing technology sintering, in order to the bond strength of enhancing plain conductor 30 and follow-up chip bonding buffering effect is provided; Then; Again second a crystal grain 100b like Fig. 2 B is engaged the first crystal grain 100a to cover crystal type; The second projection 20b that makes second crystal grain 100b correspondence respectively is connected to tie lines projection 40; Therefore, the first crystal grain 100a and the second crystal grain 100b form and electrically connect, and further are electrically connected to substrate 200 through plain conductor 30.Present embodiment does not limit the quantity that is arranged at the tie lines projection 40 on each plain conductor 30 and the first projection 20a tie point, and the visual height requirement that electrically reaches of its quantity adjusts.Identical with previous embodiment, optionally carry out the filling processing procedure of a macromolecular material, to form the space of a sealant 80 between the active face 101 of two crystal grain 100a, 100b.The formation method of this sealant 80 is identical with material and previous embodiment, so no longer repeat specification.At last, carry out manufacture procedure of adhesive, to form an adhesive body 90 in order to covered substrate 200, the first crystal grain 100a, the second crystal grain 100b and plain conductor 30.

In the crystal grain stack package structure of present embodiment; 100 uses of a plurality of crystal grain are covered crystal type a plurality of weld pads 110 on each crystal grain 100 active face 101 are linked together accordingly, and are connected to the contact 240 on substrate 200 upper surfaces 210 through plain conductor 30.Clearly; In the present embodiment; The identical length that connects each weld pad 110 pairing each the contact 240 employed plain conductor 30 to substrate 200 upper surfaces 210 on the active face 101 of each crystal grain 100 with; The plain conductor that therefore can overcome different crystal grain use different lengths electrically connects and causes signal to transmit effects such as generation time delay, and then causes system can't operate or cause problems such as system access error in data.Also therefore, present embodiment has preferable electrical characteristic and reliability.

Follow, please refer to Fig. 4, it is the generalized section of an embodiment again of polycrystalline grain stack package structure of the present invention.Identical ground; Definition has a crystal grain setting area (figure does not show) and disposes a plurality of contacts 240 on the upper surface 210 of the substrate 200 of present embodiment; Form a groove 250 (cavity) in the crystal grain setting area, and these contacts 240 are positioned at outside the crystal grain setting area, wherein; The length of this groove 250 and width are greater than the length and the width of crystal grain 100, so can use plant equipment that first a crystal grain 100a like Fig. 2 B is sticked in the groove 250 with its back side 103 and through adhesion layer 120.Then, can select backhander line processing procedure, the first projection 20a on the first crystal grain 100a active face 101 is electrically connected to the contact 240 on the substrate 200 with many strip metals lead 30.Clearly; The suitable design of groove 250 processes when substrate 200; For example: the depth design of groove 250 is become close with the thickness of the first crystal grain 100a; Therefore, when the first crystal grain 100a sticked in groove 250 with its back side 103, contact 240 on substrate 200 upper surfaces 210 and the first projection 20a on the first crystal grain 100a had close height; So make many strip metals lead 30 the first projection 20a on the contact on the substrate 200 240 and the first crystal grain 100a to be electrically connected, so can be so that this polycrystalline grain stack architecture has best electrical characteristic with the radian and the shortest length of minimum.Follow again; With second a crystal grain 100b identical with Fig. 2 B; Be connected to the plain conductor 30 and the first projection 20a on the first crystal grain 100a that is fixed in the groove 250 to cover crystal type with the second projection 20b is corresponding respectively, to form a polycrystalline grain stack architecture.Likewise, also can selectively carry out the filling processing procedure of a macromolecular material, to form the space of a sealant 80 between the active face 101 of two crystal grain 100a, 100b, with firm stack architecture.Moreover, carry out a manufacture procedure of adhesive, forming an adhesive body 90 in order to covered substrate 200, the first crystal grain 100a, the second crystal grain 100b and plain conductor 30, and the space of 250 of the first crystal grain 100a and grooves is also filled up by adhesive body 90 simultaneously.Because sealant filling processing procedure and manufacture procedure of adhesive and material thereof are all identical with aforesaid embodiment, so no longer repeat specification.At last, can also carry out planting the ball processing procedure, configuration tin ball 260 on a plurality of external connector 230 on the lower surface 220 of substrate 200 is with as external electric connection assembly.So when each crystal grain 100 in this stack architecture is a 1GbDRAM; Then the encapsulating structure of this polycrystalline grain storehouse promptly becomes the product of a 2Gb DRAM; Can it be applied in the portable electronic product, for example: mobile computer, 3G mobile, personal digital assistant and game machine.

Clearly, in the embodiment of Fig. 4, can use best plain conductor 30 length to connect the last projection 20a of two

crystal grain

100a, 100b, 20b contact 240, make present embodiment have preferable electrical characteristic and reliability to substrate 200.Moreover, via the configuration of substrate 200 upper grooves 250, make the height of whole polycrystalline grain stack package structure to reduce significantly.Into person is more arranged; Present embodiment also can similar Fig. 3; Behind the projection 20a that plain conductor 30 connects on the first crystal grain 100a; Other forms tie lines projection 40 on the tie point of each the strip metal lead 30 and the first projection 20a, in order to the bond strength that strengthens plain conductor 30 and follow-up chip bonding buffering effect is provided.So, can increase the reliability of packaging body so that polycrystalline grain stack package structure has the coupling of preferable thermal coefficient of expansion in electrode.

, be the generalized section with polycrystalline grain stack package structure embodiment of straight-through silicon wafer embolism of the present invention please more then with reference to figure 5A to Fig. 5 E.At first, shown in Fig. 5 A, be the generalized section with crystal grain 300 of straight-through silicon wafer embolism of the present invention.Crystal grain 300 tool active faces 301 and with respect to the back side 303 of active face 301 are formed with a plurality of vertical through holes that run through crystal grain 300 on the crystal grain 300.And the mode that forms through hole can select Laser drill (laser drilling), dry ecthing (dryetching) or Wet-type etching modes such as (wet etching) to form; Wherein the width of through hole can be between 1 micron (um) to 50 microns (um), and a preferable width is that 10 microns (um) are to 20 microns (um).In through hole, further form straight-through silicon wafer embolism 330 (TSV) so that 303 at the active face 301 and the back side electrically connect each other.The active face 301 of first end, 331 adjacent grains 300 of these straight-through silicon wafer embolisms 330, and the back side 303 of second opposed end 333 adjacent grains 300.The material of straight-through silicon wafer embolism 330 can be selected from following group: copper, tungsten, nickel, aluminium, gold, polysilicon (poly-silicon) and combination thereof.And in present embodiment, straight-through silicon wafer embolism 330 is arranged at the middle section of crystal grain 300.

Then; Please refer to Fig. 5 B; Be that second a crystal grain 300a like a plurality of straight-through silicon wafer embolisms 330 of having of Fig. 5 A is engaged with the first crystal grain 100a of Fig. 2 C; To form first stack architecture, wherein, this first stack architecture is corresponding respectively being electrically connected of the first projection 20a with second end 333 with the first crystal grain 100a of a plurality of straight-through silicon wafer embolism 330 of the second crystal grain 300a; And in a preferred embodiment, likewise, can between the first crystal grain 100a and the second crystal grain 300a, form a sealant 140, so that first stack architecture is more firm.Sealant 140 can be before the second crystal grain 300a engages the first crystal grain 100a; Be laid in earlier on the active face 101 of the first crystal grain 100a; Or, whole polycrystalline grain stack architecture carries out the sealant filling process again after accomplishing; And these sealant 140 filling processing procedures are identical with aforementioned sealant 80 with its material, so no longer repeat specification.

Follow, please refer to Fig. 5 C, lie on first end 331 of a plurality of straight-through silicon wafer embolism 330 of the second crystal grain 300a and form a plurality of second projection 50a, the pattern of this second projection 50a and material are identical with aforementioned projection 20.Follow again, the second projection 50a on the second crystal grain 300a among Fig. 5 C is electrically connected to the contact 240 on the substrate 200 through many strip metals lead 30, shown in Fig. 5 D.And form the mode of this plain conductor 30, can select backhander line processing procedure to carry out.

In addition; With same processing procedure mode; In addition the 3rd a crystal grain 300b and the 4th crystal grain 100b like Fig. 2 B like Fig. 5 A is electrically connected; To form one second stack architecture, wherein, this second stack architecture is corresponding respectively being electrically connected of the 4th projection 20b with second end 333 with the 4th crystal grain 100b of a plurality of straight-through silicon wafer embolism 330 of the 3rd crystal grain 300b; Likewise, a sealant 140 can between the 3rd crystal grain 300b and the 4th crystal grain 100b, be formed, to obtain the second firm stack architecture.Subsequently, on first end 331 of a plurality of straight-through silicon wafer embolism 330 of the 3rd crystal grain 300b of second stack architecture, form a plurality of second projection 50b.Then; Again with this second stack architecture to cover crystal type; With the corresponding respectively second projection 50a and the plain conductor 30 that is connected to the second crystal grain 300a of first stack architecture of the 3rd projection 50b on the 3rd crystal grain 300b of second stack architecture; To form a polycrystalline grain stack architecture that forms by four crystal grain 100a, 100b, 300a, 300b institute storehouse, shown in Fig. 5 E.In addition, present embodiment can also electrically connect the 3rd crystal grain 300b and the second crystal grain 300a earlier after the 3rd crystal grain 300b forms the 3rd projection 50b, makes the corresponding respectively second projection 50a that is connected to the plain conductor 30 and the second crystal grain 300a of the 3rd projection 50b; Then; Again the 4th crystal grain 100b is engaged the 3rd crystal grain 300b to cover crystal type; Make second end 333 of the straight-through silicon wafer embolism 330 of corresponding respectively connection the 3rd crystal grain 300b of the 4th projection 20b on the 4th crystal grain 100b, to form polycrystalline grain stack architecture like Fig. 5 E.

Likewise; Also can selectively carry out the filling processing procedure of a macromolecular material; Forming sealant 80 in the space between first stack architecture and second stack architecture and form sealant 140, with firm this polycrystalline grain stack architecture between the first crystal grain 100a and the second crystal grain 300a and between the 3rd crystal grain 300b and the 4th crystal grain 100b.Then, carry out a manufacture procedure of adhesive again, to form an adhesive body 90 in order to covered substrate 200, the first crystal grain 100a, the second crystal grain 300a, the 3rd crystal grain 300b, the 4th crystal grain 100b and plain conductor 30.Because sealant 80/140 filling processing procedure and manufacture procedure of adhesive and material thereof are all identical with aforesaid embodiment, so no longer repeat specification.At last, also can on a plurality of external connector 230 on the lower surface 220 of substrate 200, dispose tin ball (not being shown among Fig. 5 E), with as external electric connection assembly.Clearly; When each crystal grain 100,300 in this stack architecture is a 1Gb DRAM; Then this polycrystalline grain stack package structure promptly becomes the product of a 4Gb DRAM; Can it be applied in the portable electronic product, for example: mobile computer, 3G mobile, personal digital assistant and game machine.

Then; Please refer to shown in Fig. 5 F; Lie in and be embedded in the structure of substrate 200 into a control crystal grain 500; And will control crystal grain 500 and substrate 200 formation electric connections, the active face that makes control crystal grain 500 is through circuits in the substrate 200 and a plurality of external connector that are disposed at substrate 200 lower surfaces 220 230 electric connections; In addition, the mode that control crystal grain 500 is embedded into can be in the multilayer circuit board forming process, is about to this control crystal grain 500 and is disposed in the substrate 200, and it utilizes known techniques formation, and this is embedded into structure, so no longer specify.Clearly; The difference of Fig. 5 F and Fig. 5 E exists: the control crystal grain 500 that further configuration one is embedded in the substrate 200 in Fig. 5 E; All the other connection procedures that form the first crystal grain 100a, the second crystal grain 300a, the 3rd crystal grain 300b and the 4th crystal grain 100b are all identical with Fig. 5 B to Fig. 5 E, therefore repeat no more it.

Following, please refer to Fig. 6, is the generalized section that polycrystalline grain stack architecture of the present invention is formed at the embodiment of the substrate with groove.By shown in Figure 6, its polycrystalline grain stack architecture is identical with polycrystalline grain stack architecture among Fig. 5 E, and wherein difference is substrate 200.Substrate 200 in the present embodiment is identical with substrate 200 structures among Fig. 4; Definition has a crystal grain setting area (figure does not show) and disposes a plurality of contacts 240 on its upper surface 210; Form a groove 250 in the crystal grain setting area; These contacts 240 are positioned at outside the crystal grain setting area, and wherein, the length of this groove 250 and width are greater than the length and the width of crystal grain 100.After being formed at the groove 250 of substrate 200, be the second projection 50a on the second crystal grain 300a to be electrically connected to the contact 240 on the substrate 200 through the formed many strip metals lead 30 of for example backhander line processing procedure like first stack architecture among Fig. 5 C.Clearly; The suitable design of groove 250 processes when substrate 200; For example: the depth design of groove 250 is become close with the thickness of first stack architecture that comprises crystal grain 100a and 300a; Therefore; When first stack architecture sticks in the groove 250 of substrate 200 with the back side 103 of the first crystal grain 100a and through adhesion layer 120 after; Contact 240 on substrate 200 upper surfaces 210 and the second projection 50a on the second crystal grain 300a have close height, thus make many strip metals lead 30 the second projection 50a on the contact on the substrate 200 240 and the second crystal grain 300a to be electrically connected with the radian and the shortest length of minimum, so can be so that this polycrystalline grain stack architecture has best electrical characteristic.Because the process that polycrystalline grain stack architecture forms is identical with the process of previous embodiment, so no longer repeat specification.Likewise, present embodiment also can selectively carry out the filling processing procedure of a macromolecular material, to form the space of sealant 80/140 between each crystal grain 100a, 300a, 300b, 100b, with firm stack architecture.Simultaneously; Also can carry out a manufacture procedure of adhesive again; Forming an adhesive body 90 in order to covered substrate 200, the first crystal grain 100a, the second crystal grain 300a, the 3rd crystal grain 300b, the 4th crystal grain 100b and plain conductor 30, and the space of 250 of the first crystal grain 100a and the second crystal grain 300a and grooves is also filled up by adhesive body 90 simultaneously.Because sealant filling processing procedure and manufacture procedure of adhesive and material thereof are all identical with aforesaid embodiment, so no longer repeat specification.At last, can also on a plurality of external connector 230 on the lower surface 220 of substrate 200, dispose tin ball 260, with as external electric connection assembly.

Clearly, in the embodiment of Fig. 6, can use best plain conductor 30 length to connect the contact 240 of projection 50a/50b to the substrate 200 on the crystal grain 300a/300b, make present embodiment have preferable electrical characteristic and reliability.Moreover, via the configuration of the groove on the substrate 200 250, make the height of whole polycrystalline grain stack package structure to reduce significantly.Into person is more arranged; Present embodiment also can similar Fig. 3; Behind the second projection 50a that plain conductor 30 connects on the second crystal grain 300a; Other forms tie lines projection 40 on the tie point of each the strip metal lead 30 and the second projection 50a, in order to the bond strength that strengthens plain conductor 30 and follow-up chip bonding buffering effect is provided.So, can increase the reliability of packaging body so that polycrystalline grain stack architecture has the coupling of preferable thermal coefficient of expansion in electrode.

Following, please refer to Fig. 7, is the generalized section of an embodiment again of polycrystalline grain stack package structure of the present invention.As shown in Figure 7; At first; Crystal grain 300 vertical stacks of a plurality of straight-through silicon wafer embolisms 330 of having of three Fig. 5 A are integral, and its storehouse mode forms a projection 50 respectively accordingly on first end 331 of each straight-through silicon wafer embolism 330 of the crystal grain 300 of Fig. 5 A; And then with the straight-through silicon wafer embolism 330 second ends 333 corresponding electric connections respectively of the projection 50 of a crystal grain 300 with another crystal grain 300; Again the stack architecture of these three crystal grain 300 and the crystal grain 100 of Fig. 2 C are formed electric connection afterwards; To form first stack architecture; Wherein, this first stack architecture is projection 20 corresponding the linking together with second end 333 with the crystal grain 100 of the straight-through silicon wafer embolism 330 on the crystal grain 300.Follow again, the projection 50 that is positioned in first stack architecture on the uppermost crystal grain 300 is electrically connected to the contact 240 on the substrate 200 through many strip metals lead 30, and forms the mode of this plain conductor 30, can select backhander line processing procedure to carry out.

In addition; With same processing procedure mode; Crystal grain 300 vertical stacks with a plurality of straight-through silicon wafer embolisms 330 of having of three Fig. 5 A are integral in addition, and then the stack architecture of these three crystal grain 300 and the crystal grain 100 of Fig. 2 B are electrically connected, to form one second stack architecture; Because it forms this second stack architecture process is identical with the process that forms first stack architecture, so no longer repeat specification.Then; Again with this second stack architecture to cover crystal type; With the corresponding respectively a plurality of projections 50 that exposed to the open air on the plain conductor 30 and first stack architecture that are connected to of a plurality of projections 50 that exposed to the open air on second stack architecture; To form a polycrystalline grain stack architecture that forms by 100/300 storehouse of eight crystal grain, as shown in Figure 7.Likewise, also can selectively carry out the filling processing procedure of a macromolecular material, to form sealant 80/140 between space and each crystal grain 100/300 between first stack architecture and second stack architecture, with firm this polycrystalline grain stack architecture.Then, carry out a manufacture procedure of adhesive again, to form an adhesive body 90 in order to covered substrate 200, eight crystal grain 100/300 and plain conductors 30.Because sealant filling processing procedure and manufacture procedure of adhesive and material thereof are all identical with aforesaid embodiment, so no longer repeat specification.At last, can also on a plurality of external connector 230 on the lower surface 220 of substrate 200, dispose tin ball (not being shown among Fig. 7), with as external electric connection assembly.Clearly; When each crystal grain 100/300 in this stack architecture is 1Gb DRAM; Then this polycrystalline grain stack package structure promptly becomes the product of a 8GbDRAM; Can it be applied in the portable electronic product, for example: mobile computer, 3G mobile, personal digital assistant and game machine.

In addition; What specify is when the projection among the

aforesaid embodiment

20,50 uses a kind of flexible metal as material; Gold for example, soft that can be through the flexible metal, high tenacity and the good copline characteristic of complying with make when carrying out polycrystalline grain vertical stack; Can get at the joint interface of electrode (being projection) to absorb because thermal coefficient of expansion does not match between metal electrode material; And, also can effectively go to overcome the problem of roughness between metal electrode material, so can increase the processing procedure of polycrystalline grain vertical stack and the reliability of product effectively in horizontal and vertical distortion that produces.

Then, please refer to Fig. 8 A, is the generalized section that polycrystalline grain stack package structure of the present invention forms system-in-package structure.At first; Shown in Fig. 8 A, the structure of its substrate 200 is identical with substrate 200 among Fig. 4, and definition has a crystal grain setting area (figure shows) and disposes a plurality of contacts 240 on its upper surface 210; Form a groove 250 in the crystal grain setting area; And these contacts 240 are positioned at outside the crystal grain setting area, and wherein, the length of this groove 250 and width are greater than the length and the width of crystal grain 100.In the present embodiment; Earlier a control crystal grain 500 is arranged in the groove 250; And will control crystal grain 500 and substrate 200 formation electric connections; The mode that control crystal grain 500 and substrate 200 electrically connect can be with covering crystal type, and the active face of control crystal grain 500 is electrically connected in the face of substrate 200 and with a plurality of end points (not being shown among the figure) that substrate 200 is arranged at groove 250 bottoms.Also can select to control crystal grain 500 sticks in the groove 250 with the back side; And form lead with the routing mode and electrically connect the end points (not being shown among the figure) that weld pad to substrate 200 on control crystal grain 500 active faces is arranged at groove 250 bottoms; Then, on control crystal grain 500 active faces, lay FOW (Film-over-wire) film with coated wire (not being shown among the figure).Then, with the first crystal grain 100a of Fig. 2 B, with its back side 103 and through adhesion layer 120 stick in control crystal grain 500 the back side or directly stick on the FOW film with its back side 103.Then, can select backhander line processing procedure, the projection 20a on the first crystal grain 100a is electrically connected to the contact 240 on the substrate 200 with many strip metals lead 30.Clearly; The suitable design of groove 250 processes when substrate 200; For example: stick on the back side or the FOW film of control crystal grain 500 as the first crystal grain 100a after; Contact 240 on substrate 200 upper surfaces 210 and the projection 20a on the first crystal grain 100a have close height; So make many strip metals lead 30 the projection 20a on the contact on the substrate 200 240 and the first crystal grain 100a to be electrically connected, so can be so that this polycrystalline grain stack architecture has best electrical characteristic with the radian and the shortest length of minimum.Follow again,, the projection 20b correspondence on it is connected to plain conductor 30 and is fixed on the projection 20a on the first crystal grain 100a in the groove 250 to cover crystal type, to form a polycrystalline grain stack architecture with second a crystal grain 100b identical with Fig. 2 B.Likewise, also can selectively carry out the filling processing procedure of a macromolecular material, to form sealant 80 between two crystal grain 100a, 100b, with firm stack architecture.Then; Carry out a manufacture procedure of adhesive again; Forming an adhesive body 90 in order to covered substrate 200, the first crystal grain 100a, the second crystal grain 100b and plain conductor 30, and also the while is filled up by adhesive body 90 in the space of the control crystal grain 500 and the first crystal grain 100a and 250 of grooves.Because sealant filling processing procedure and manufacture procedure of adhesive and material thereof are all identical with aforesaid embodiment, so no longer repeat specification.At last, can also on a plurality of external connector 230 on the lower surface 220 of substrate 200, dispose tin ball 260, with as external electric connection assembly.Clearly; Configuration through control crystal grain 500; Make the polycrystalline grain stack package structure of present embodiment form a system in package (SiP); And when each crystal grain 100 was a 1Gb DRAM, the polycrystalline grain stack package structure of present embodiment can be controlled the access of 2Gb DRAM through control crystal grain 500, to reach the characteristic of larger capacity and higher service speed and big frequency range.So can it be applied in the portable electronic product, for example: mobile computer, 3G mobile, personal digital assistant and game machine.

Follow, please refer to Fig. 8 B, polycrystalline grain stack package structure of the present invention forms the generalized section of another embodiment of system-in-package structure.Clearly, the difference between Fig. 8 B and Fig. 8 A only is: Fig. 8 B is arranged in the groove 250 of substrate 200 at control crystal grain 500, and with substrate 200 form electrically connect after, again with four storehouse all-in-one-piece crystal grain 100/300 affixed being integral; Wherein control mode that crystal grain 500 and substrate 200 electrically connect and identical with Fig. 8 A with the affixed mode of crystal grain 100; In addition, the storehouse process and the structure of four crystal grain 100/300 of storehouse all-in-one-piece are identical with Fig. 5 E, so repeat no more.Clearly; Configuration through control crystal grain 500; Make the polycrystalline grain stack package structure of present embodiment form a system in package (SiP); And when each crystal grain was a 1Gb DRAM, the polycrystalline grain stack package structure of present embodiment can be controlled the access of 4Gb DRAM through control crystal grain 500, to reach the characteristic of larger capacity and higher service speed and big frequency range.So can it be applied in the portable electronic product, for example: mobile computer, 3G mobile, personal digital assistant and game machine.

Follow, please refer to Fig. 8 C, polycrystalline grain stack package structure of the present invention forms the generalized section of another embodiment of system-in-package structure.The identical ground of Fig. 8 C with Fig. 8 A; In the crystal grain setting area of substrate 200, form a groove 250; And a control crystal grain 500 is arranged in the groove 250, and control crystal grain 500 and substrate 200 formation electric connections, control crystal grain 500 is identical with earlier figures 8A with the mode that substrate 200 electrically connects; Then, use earlier a filler partly filling in groove 250, to form that a cover layer 280 will control that crystal grain 500 covers and the space of 250 of crystal grain 500 and grooves is controlled in filling.Afterwards, on cover layer 280, form again like the polycrystalline grain stack architecture among Fig. 8 A.Because the process that polycrystalline grain stack architecture forms is identical with the process of previous embodiment, so no longer repeat specification.

Follow, please refer to Fig. 8 D, polycrystalline grain stack package structure of the present invention forms the generalized section of an embodiment again of system-in-package structure.Clearly, Fig. 8 D is identical with the structure of Fig. 8 C, and control crystal grain 500 is arranged in the groove 250; Then, use a filler partly filling in groove 250, to form that a cover layer 280 will control that crystal grain 500 covers and the space of 250 of crystal grain 500 and grooves is controlled in filling; Then, on cover layer 280, form the stack architecture of four crystal grain 100/300 identical again with Fig. 8 B.Because control crystal grain 500 is identical with earlier figures 8A with the mode that substrate 200 electrically connects, and the process that polycrystalline grain stack architecture forms is also identical with the process of previous embodiment, so no longer repeat specification.

Clearly; Configuration through control crystal grain 500; Make the polycrystalline grain stack package structure of present embodiment form a system in package (SiP); And when each crystal grain was a 1Gb DRAM, the polycrystalline grain stack package structure of present embodiment can be controlled 2Gb DRAM (like the structure of Fig. 8 C) or the access that 4Gb is DRAM (structure of Fig. 8 D) through control crystal grain 500, to reach the characteristic of larger capacity and higher service speed and big frequency range.So can it be applied in the portable electronic product, for example: mobile computer, 3G mobile, personal digital assistant and game machine.

Follow, please refer to Fig. 9, polycrystalline grain stack package structure of the present invention forms the generalized section of an embodiment again of system-in-package structure.As shown in Figure 9; It is on the back side 103 of the superiors' crystal grain 100 of the polycrystalline grain stack architecture of Fig. 5 E (the 4th crystal grain 100b); Paste a control crystal grain 500 again; Then, will control the contact 240 that a plurality of weld pads 510 on the crystal grain 500 are electrically connected to the upper surface 210 of substrate 200 with another routing processing procedure again.Therefore, present embodiment also forms a kind of system in package, thus can control the access of 2Gb DRAM through control crystal grain 500, to reach the characteristic of larger capacity and higher service speed and big frequency range.

Then, please refer to Figure 10 A to Figure 10 D, is the generalized section of an embodiment again with polycrystalline grain stack architecture of a plurality of straight-through silicon wafer embolisms of the present invention.At first, shown in Figure 10 A, has the generalized section of the crystal grain 400 of a plurality of straight-through silicon wafer embolisms for of the present invention one.Crystal grain 400 has active face 401 and with respect to the back side 403 of active face 401; And on crystal grain 400, form a plurality of vertical through holes that run through the active face 401 and the back side 403; In each vertical through hole, further form straight-through silicon wafer embolism 450 so that 403 at active face 401 and the back side electrically connect each other, and form the mode of through hole and lead directly to the material of silicon wafer embolism 450 identical with Fig. 5 A.In the present embodiment; These a plurality of straight-through silicon wafer embolisms 450 form first end 451 and 403 formation, second end 453 in the back side in active face 401; And on second end 453 of these straight-through silicon wafer embolisms 450 of part, form the projection 457 that protrudes crystal grain 400 back sides 403, and partly first end 451 of these straight-through silicon wafer embolisms 450 also forms the projection 455 that protrudes crystal grain 400 active faces 401.And these projections 455 and projection 457 can be the part of straight-through silicon wafer embolism 450; Promptly one-body molded with straight-through silicon wafer embolism 450 same materials, also can be formed at respectively on first end 451 and second end 453 of straight-through silicon wafer embolism 450 with other electric conducting material in addition.Then, carry out vertical stack with a plurality of with crystal grain 400 Figure 10 A same structure, to form a stack architecture 400A, shown in Figure 10 B.And the storehouse mode of Figure 10 B is that the projection 455 on a plurality of straight-through silicon wafer embolism 450 first ends 451 of the projection on a plurality of straight-through silicon wafer embolism 450 second ends 453 of each upper strata crystal grain 400 457 and lower floor's crystal grain 400 is electrically connected respectively accordingly.Be the stack architecture 400A that four crystal grain 400 storehouses is formed a polycrystalline grain in the present embodiment.In addition, in another embodiment, can not form projection 455 on first end 451 of a plurality of straight-through silicon wafer embolism 450 of crystal grain 400; Therefore; In this embodiment; The storehouse mode of Figure 10 B then is that the projection on a plurality of straight-through silicon wafer embolism 450 second ends 453 of each upper strata crystal grain 400 457 is directly distinguished corresponding connections with first end 451 of a plurality of straight-through silicon wafer embolism 450 of lower floor crystal grain 400.

Then, with stack architecture 400A and 600 electric connections of the crystal grain on another active face 210 that is fixed in substrate 200 of Figure 10 B, shown in Figure 10 C; Wherein, crystal grain 600 has an active face and a relative back side, and is fixed in the crystal grain setting area (figure does not show) of substrate 200 with its back side, and a plurality of weld pads 610 are disposed on the outer peripheral areas of crystal grain 600 active faces, and form projection 70 on each weld pad 610; A plurality of contacts 240 that will be formed on the active face 210 of projection 70 and substrate 200 on the weld pad 610 through plain conductor 30 then electrically connect; Then; Stack architecture 400A and crystal grain 600 are formed electric connection; Its electric connection mode is with the corresponding respectively projection 70 that connects on plain conductor 30 and the crystal grain 600 of the projection on straight-through silicon wafer embolism 450 second ends 453 of the orlop crystal grain 400 of stack architecture 400A 457, can form the stack architecture of the polycrystalline grain of Figure 10 C.What specify is in the present embodiment; The a plurality of straight-through silicon wafer embolism 450 that is positioned at zone line in the crystal grain 400 is to be electrically connected to the straight-through silicon wafer embolism 450 that is positioned at outer peripheral areas through crystal grain 400 inner circuits (figure does not show), then again through the 457 corresponding projections 70 that connect on plain conductor 30 and the crystal grain 600 of the projection on the straight-through silicon wafer embolism 450 that is formed at outer peripheral areas.In the present embodiment, crystal grain 600 can be the crystal grain that has identical function with crystal grain 100/300, for example: DRAM; And crystal grain 600 also can be the crystal grain that has function inequality with crystal grain 100/300; For example: flash memory (Flash Memory) or a non-functional empty crystal grain (dummy die); Crystal grain 600 also can be control chip or other special purpose chip (ASIC) in addition; Like digital signal processor (DSP), central processing unit (CPU), MCU Microprocessor Control Unit (MCU) etc., to this, the present invention does not limit.

Then; Present embodiment also can selectively carry out the filling processing procedure of a macromolecular material; Forming sealant 140 between the crystal grain 400 of stack architecture 400A, and sealant 80 is between stack architecture 400A and crystal grain 600, with the firm stack architecture of this polycrystalline grain.Then, also can carry out a manufacture procedure of adhesive again, to form an adhesive body 90 in order to covered substrate 200, stack architecture 400A, crystal grain 600 and plain conductor 30.Because sealant filling processing procedure and manufacture procedure of adhesive and material thereof are all identical with aforesaid embodiment, so no longer repeat specification.At last, can also on a plurality of external connector 230 on the lower surface 220 of substrate 200, dispose tin ball 260, with as external electric connection assembly, shown in Figure 10 C.

In addition, the present invention can also be in the substrate 200 of Figure 10 C, further embed a control crystal grain 500, and shown in Figure 10 D, it is identical with Fig. 2 I wherein will to control the mode that crystal grain 500 is formed in the substrate 200, so no longer repeat specification.

, be the generalized section of an embodiment again with polycrystalline grain stack architecture of a plurality of straight-through silicon wafer embolisms of the present invention please again with reference to Figure 11.Shown in figure 11, its with Figure 10 C stack architecture 400A, crystal grain 600 and many strip metals lead 30 combine identically, and difference therebetween is substrate 200.Substrate 200 in the present embodiment is identical with substrate 200 structures among Fig. 4; Definition has a crystal grain setting area (figure does not show) and disposes a plurality of contacts 240 on its upper surface 210; Form a groove 250 in the crystal grain setting area; And these contacts 240 are positioned at outside the crystal grain setting area, and wherein, the length of this groove 250 and width are greater than the length and the width of crystal grain 600.Clearly; When the crystal grain among Figure 11 600 is fixed in the groove 250 of substrate 200 with its back side and through adhesion layer 120 after, be the projection 70 on the weld pad 610 of crystal grain 600 to be electrically connected to the contact 240 on the substrate 200 through the formed many strip metals lead 30 of for example backhander line processing procedure.Clearly; The suitable design of groove 250 processes when substrate 200; For example: the depth design of groove 250 is become close with the thickness of crystal grain 600; Therefore, be fixed in the groove 250 of substrate 200 when crystal grain 600 after, contact on substrate 200 upper surfaces 210 240 has close height with projection 70 on the crystal grain 600; So make many strip metals lead 30 projection 70 on contact on the substrate 200 240 and the crystal grain 600 to be electrically connected, so can be so that this polycrystalline grain stack architecture has best electrical characteristic with the radian of minimum and the shortest length.Because the process that polycrystalline grain stack architecture forms is identical with the process of previous embodiment, so no longer repeat specification.Likewise, present embodiment also can selectively carry out the filling processing procedure of a macromolecular material, to form sealant 140,80 between the crystal grain 400 of stack architecture 400A and between stack architecture 400A and the crystal grain 600, with the stack architecture of firm polycrystalline grain.Then, also can carry out a manufacture procedure of adhesive again, forming an adhesive body 90 in order to covered substrate 200, stack architecture 400A, crystal grain 600 and plain conductor 30, and the space of 250 of crystal grain 600 and grooves is also filled up by adhesive body 90 simultaneously.Because sealant filling processing procedure and manufacture procedure of adhesive and material thereof are all identical with aforesaid embodiment, so no longer repeat specification.At last, again with configuration tin ball 260 on a plurality of external connector 230 on the lower surface 220 of substrate 200, with as external electric connection assembly.

Moreover, please refer to Figure 12, be the generalized section of an embodiment again that polycrystalline grain stack package structure of the present invention forms system-in-package structure.Shown in figure 12, its crystal grain stack architecture is identical with Figure 11, and difference between the two is, a control crystal grain 500 further is set in the present embodiment in the groove 250 of substrate 200, and this control crystal grain 500 is to form with substrate 200 to electrically connect.This control crystal grain 500 can will be controlled the active face of crystal grain 500 and a plurality of end points (not being shown among the figure) electric connection of groove 250 bottoms that are disposed at substrate 200 to cover crystal type with the mode that substrate 200 electrically connects; Perhaps will control crystal grain 500 and stick in the groove 250, and form lead with the routing mode and electrically connect the end points (not being shown among the figure) that weld pad to substrate 200 on control crystal grain 500 active faces is arranged at groove 250 bottoms with the back side; Then, can optionally use a filler partly filling in groove 250, to form that a cover layer 280 will control that crystal grain 500 covers and the space of 250 of crystal grain 500 and grooves is controlled in filling; Then, on cover layer 280, form polycrystalline grain stack package structure again, to form a system-in-package structure like Figure 12.

The above is merely specific embodiment of the present invention, is not in order to limit claim of the present invention; All other do not break away from the equivalence of being accomplished under the disclosed spirit and changes or modification, all should be included in the following claim.

Claims

1. polycrystalline grain stack package structure comprises:

One substrate has a upper surface and a lower surface, defines a crystal grain setting area on this upper surface and disposes a plurality of contacts, and said contact is positioned at outside this crystal grain setting area;

One first crystal grain has an active face and reaches a back side of this active face relatively, and this first crystal grain is arranged at this crystal grain setting area with this back side, disposes on this active face and forms one first projection on a plurality of first weld pads and said first weld pad;

Many strip metals lead is in order to connect said first projection to said contact;

One second crystal grain; Back side with an active face and relative this active face; Dispose a plurality of second weld pads on this active face; Form one second projection on said second weld pad, this second crystal grain makes corresponding respectively said plain conductor and said first projection of connecting of said second projection with this active face this this first crystal grain of active face joint in the face of this first crystal grain;

One adhesive body is in order to cover this substrate, this first crystal grain, this second crystal grain and said plain conductor.

2. encapsulating structure according to claim 1 is characterized in that, said first weld pad is positioned at middle section and the middle section that said second weld pad is positioned at this active face of this second crystal grain of this active face of this first crystal grain.

3. encapsulating structure according to claim 1 is characterized in that, further disposes at least one the 3rd projection between said plain conductor and said second projection.

4. polycrystalline grain stack package structure comprises:

One second crystal grain; A back side and a plurality of straight-through silicon wafer embolism with an active face and relative this active face; Said straight-through silicon wafer embolism runs through this second crystal grain so that electrically connect each other between this active face and this back side; Form a plurality of second projections on this active face and connect said straight-through silicon wafer embolism respectively, wherein this second crystal grain makes said straight-through silicon wafer embolism difference correspondence connect said first projection with this back side this this first crystal grain of active face joint in the face of this first crystal grain;

Many strip metals lead is in order to connect said second projection to said contact;

One the 3rd crystal grain; A back side and a plurality of straight-through silicon wafer embolism with an active face and relative this active face; Said straight-through silicon wafer embolism runs through the 3rd crystal grain so that electrically connect each other between this active face and this back side; Form a plurality of the 3rd projections on this active face and connect said straight-through silicon wafer embolism respectively, wherein the 3rd crystal grain makes corresponding respectively said plain conductor and said second projection of connecting of said the 3rd projection with this active face this this second crystal grain of active face joint in the face of this second crystal grain;

One the 4th crystal grain; Back side with an active face and relative this active face; Dispose a plurality of second weld pads on this active face; And form one the 4th projection on said second weld pad, the 4th crystal grain makes the corresponding respectively said straight-through silicon wafer embolism that connects the 3rd crystal grain of said the 4th projection with this active face this back side joint the 3rd crystal grain in the face of the 3rd crystal grain;

One adhesive body is in order to cover this substrate, this first crystal grain, this second crystal grain, the 3rd crystal grain, the 4th crystal grain and said plain conductor.

5. encapsulating structure according to claim 4; It is characterized in that; Said first weld pad is positioned at middle section and the middle section that said second weld pad is positioned at this active face of the 4th crystal grain of this active face of this first crystal grain, and said straight-through silicon wafer embolism is arranged at the middle section of this second crystal grain and the 3rd crystal grain respectively.

6. encapsulating structure according to claim 4 is characterized in that, further disposes at least one the 5th projection between said plain conductor and said the 3rd projection.

7. polycrystalline grain stack package structure comprises:

One substrate has a upper surface and a lower surface, defines a crystal grain setting area on this upper surface and disposes a plurality of contacts, forms a groove in this crystal grain setting area, and said contact is positioned at outside this crystal grain setting area;

One first crystal grain has an active face and reaches a back side of this active face relatively, and this first crystal grain is arranged in this groove with this back side, disposes on this active face and forms one first projection on a plurality of first weld pads and said first weld pad;

8. encapsulating structure according to claim 7 is characterized in that said first weld pad is positioned at the middle section of this active face of this first crystal grain, and said second weld pad is positioned at the middle section of this active face of this second crystal grain.

9. encapsulating structure according to claim 7 is characterized in that, further disposes at least one the 3rd projection between said plain conductor and said second projection.

10. polycrystalline grain stack package structure comprises:

One substrate has a upper surface and a lower surface, defines a crystal grain setting area on this upper surface and disposes a plurality of contacts, forms a groove in this crystal grain setting area, and said first tip node is positioned at outside this crystal grain setting area;

One the 4th crystal grain; Back side with an active face and relative this active face; Dispose a plurality of second weld pads on this active face; Form one the 4th projection on said second weld pad, the 4th crystal grain makes the corresponding respectively said straight-through silicon wafer embolism that connects the 3rd crystal grain of said the 4th projection with this active face this back side joint the 3rd crystal grain in the face of the 3rd crystal grain;

11. encapsulating structure according to claim 10; It is characterized in that; Said first weld pad is positioned at the middle section of this active face of this first crystal grain; Said second weld pad is positioned at the middle section of this active face of the 4th crystal grain, and said straight-through silicon wafer embolism is arranged at the middle section of this second crystal grain and the 3rd crystal grain respectively.

12. according to claim 7 or 10 described encapsulating structures; It is characterized in that; It further comprises a control crystal grain and is arranged in this groove and between this first crystal grain and this substrate; This first crystal grain directly is fixed on this control crystal grain with this back side, and this control crystal grain and this substrate electrically connect.

13. according to claim 7 or 10 described encapsulating structures; It is characterized in that; It further comprises a control crystal grain and is arranged in this groove and between this first crystal grain and this substrate; This control crystal grain is coated by a cover layer, and this first crystal grain is fixed on this cover layer, and this control crystal grain and this substrate electrically connect.

14. encapsulating structure according to claim 10 is characterized in that, further disposes at least one the 5th projection between said plain conductor and said the 3rd projection.

15. a polycrystalline grain stack package structure comprises:

One first crystal grain has an active face and reaches a back side of this active face relatively, and this first crystal grain is arranged at this crystal grain setting area with this back side, disposes on the outer peripheral areas of this active face and forms one first projection on a plurality of first weld pads and said first weld pad;

One second crystal grain; A back side and a plurality of straight-through silicon wafer embolism with an active face and relative this active face; Each should run through this second crystal grain so that electrically connect each other between this active face and this back side by straight-through silicon wafer embolism; And each should straight-through silicon wafer embolism forms one first end and forms one second end in this back side in this active face; And on second end of said straight-through silicon wafer embolism at least partly, form one second projection respectively, wherein this second crystal grain engages this first crystal grain with this back side in the face of this active face of this first crystal grain, makes corresponding respectively said plain conductor and said first projection of connecting of said second projection;

One the 3rd crystal grain; A back side and a plurality of straight-through silicon wafer embolism with an active face and relative this active face; Each should run through the 3rd crystal grain so that electrically connect each other between this active face and this back side by straight-through silicon wafer embolism; And each should straight-through silicon wafer embolism forms one first end and forms one second end in this back side in this active face; And on second end of said straight-through silicon wafer embolism at least partly, form one the 3rd projection respectively, wherein the 3rd crystal grain engages this second crystal grain with this back side in the face of this active face of this second crystal grain, makes corresponding respectively first end that connects the said straight-through silicon wafer embolism of this second crystal grain of said the 3rd projection of the 3rd crystal grain;

One adhesive body is in order to cover this substrate, this first crystal grain, this second crystal grain, the 3rd crystal grain and said plain conductor.

16. encapsulating structure according to claim 15; It is characterized in that; This second crystal grain further comprises a plurality of the 4th projections; Each the 4th projection is formed at first end of the said straight-through silicon wafer embolism of this second crystal grain, and wherein said the 3rd projection of the 3rd crystal grain electrically connects said the 4th projection of this second crystal grain respectively.

17. encapsulating structure according to claim 15 is characterized in that, further disposes at least one the 5th projection between said plain conductor and said second projection.

18. encapsulating structure according to claim 15 is characterized in that, further forms a groove in this crystal grain setting area, this first crystal grain is arranged in this groove.

19. encapsulating structure according to claim 18; It is characterized in that; It further comprises a control crystal grain and is arranged in this groove and between this first crystal grain and this substrate, this first crystal grain directly is fixed on this control crystal grain with this back side, and this controls crystal grain and the electric connection of this substrate.

20. encapsulating structure according to claim 18; It is characterized in that; It further comprises a control crystal grain and is arranged in this groove and between this first crystal grain and this substrate; This control crystal grain is coated by a cover layer, and this first crystal grain is fixed on this cover layer, and this control crystal grain and this substrate electrically connect.