CN102315186A - Semiconductor device packaged with printing bonding materials and manufacturing method thereof - Google Patents
Semiconductor device packaged with printing bonding materials and manufacturing method thereof Download PDFInfo
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- CN102315186A CN102315186A CN201010226812XA CN201010226812A CN102315186A CN 102315186 A CN102315186 A CN 102315186A CN 201010226812X A CN201010226812X A CN 201010226812XA CN 201010226812 A CN201010226812 A CN 201010226812A CN 102315186 A CN102315186 A CN 102315186A
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The invention discloses a semiconductor device packaged with printing bonding materials. The semiconductor device is characterized by comprising a first lead framework, a semiconductor chip, and a third chip carrying platform, wherein the first lead framework is provided with a first chip carrying platform and a second chip carrying platform which are electrically isolated; the semiconductor chip is formed by printing a plurality of top electrodes on the top of the semiconductor chip; first electroconductive printing bonding materials are fixedly attached to the first chip carrying platform and the second chip carrying platform; the third chip carrying platform is arranged on a second lead framework and is formed by printing on the top of the third chip carrying platform; and a second electroconductive printing bonding material is fixedly attached onto a plurality of bottom electrodes at the bottom of the semiconductor chip. The size, shape and thickness of the printing bonding materials are determined as actually required or by a contact area between the semiconductor chip and the chip carrying platforms, wherein the semiconductor chip and the chip carrying platforms are connected in a bonding manner. In the semiconductor package provided by the invention, by utilizing the characteristics of forming the bonding materials through printing, the obvious defects in the prior art are overcome, the quality and the performance of a semiconductor product can be effectively improved, and the production efficiency is increased.
Description
Technical field
The present invention relates to a kind of semiconductor device and manufacturing approach thereof, particularly a kind of semiconductor device and manufacturing approach thereof through the encapsulation of printing adhesives.
Background technology
In the encapsulation of integrated circuit, generally use lead frame to come carries chips and be connected external devices at present.Lead frame is normally processed through punching press or etching method by the flat sheet of copper or alloy; Have that high strength, anticorrosive, anti-oxidant, high conductivity, high-termal conductivity, ductility are good, the characteristics of easy shaping; Also has fabulous coating performance; Bonding plastic-sealed body that can be good, and have and the hand-to-hand thermal coefficient of expansion of the thermal coefficient of expansion of said chip and plastic-sealed body.
Specify in the conventional semiconductor packages technology the concrete manufacture process of adhering chip and lead frame below in conjunction with accompanying drawing 1 to Fig. 5.
As shown in Figure 1, lead frame 100 comes carries chips 150 through the slide holder 110 that is provided with, and is provided with 2 pins 120,130 chip 150 is connected to external component.As shown in Figure 2, the method for adhering chip commonly used is to lay in the surface by utilizing point glue mode of slide holder 110 to form adhesives 140 at present; Wherein, described adhesives 140 can be an adhesive epoxy resin, comprises to utilize a conduction of glue formation or non-conductive epoxy resin; This adhesives 140 also can be soldering paste or the eutectic material that utilizes some glue to form.As shown in Figure 3, again chip 150 (for example IC) is placed on the adhesives 140, with slide holder 110 fixed bondings.As shown in Figure 4, utilize wire bond technology (WireBonding is commonly called as routing) that chip 150 is connected through number of metal lead-in wire 160 with pin 130 with pin 120 respectively.As shown in Figure 5, lead frame 100 is carried out the plastic packaging moulding, it is encapsulated in the plastic-sealed body 170, to accomplish canned program, make chip 150 being connected in this semiconductor packages through said pin 120 and 130 realizations and other devices of outside.
Said chip is connected with pin, also can be as shown in Figure 6, and use number of metal to connect dull and stereotyped 180 and chip 150 is connected with pin 130 with pin 120 respectively realizes.Wherein, to connect dull and stereotyped 180 be to utilize adhesives (for example soldering paste or epoxy resin) that some glue forms to combine to be connected with chip 150 and pin 120, pin 130 respectively for described metal.Subsequently, as shown in Figure 7, lead frame 100 is carried out the plastic packaging moulding, it is encapsulated in the plastic-sealed body 170, to accomplish canned program.
Said chip is connected with pin, can also be as shown in Figure 8, and use metal lead wire 160 that chip 150 is connected with pin 120, and use metal connection flat board 180 that chip 150 is connected with pin 130 simultaneously.Wherein, described metal lead wire 160 utilizes the wire bond technology to combine to be connected with chip 150 and pin 120 respectively; Described metal connects dull and stereotyped 180 and then utilizes the adhesives (for example soldering paste or epoxy resin) of some glue formation to combine to be connected with chip 150 and pin 130 respectively.Subsequently, as shown in Figure 9, lead frame 100 is carried out the plastic packaging moulding, it is encapsulated in the plastic-sealed body 170, to accomplish canned program.
But there are following shortcoming in adhesives adhering chip and lead frame that above-mentioned described utilization point glue mode forms:
1, in identical package dimension; Form adhesives (soldering paste or epoxy resin) owing to adopt some glue mode on slide holder, to lay earlier; Behind attaching and adhering chip on it; This adhesives can overflow around chip, based on this unavoidable effect of overflowing, will limit packed chip size size.
2, on slide holder, lay the adhesives (soldering paste or epoxy resin) that is formed for adhering chip through a glue; The thickness that this mode can cause formed adhesives is uniformity not, can make that thus attaching bonding chip above that produces the situation of inclination.
3, adopt soldering paste or epoxy resin as adhesives with after die bonding is to the slide holder, can produce very high stress, the as easy as rolling off a log chip that causes cracks, and influences chip reliability.
4, adopt soldering paste as adhesives with after die bonding is to the slide holder, also need under nitrogen or environment, carry out Reflow Soldering at the mist of nitrogen and hydrogen.
5, in the process of adhering chip, if adopt soldering paste or eutectic material, need higher technological operation temperature as adhesives, this can cause the quick oxidation of lead frame.
In view of above-mentioned, be necessary very much to propose a kind of new semiconductor packages and method, through improving the existing chip adhesive technology, overcoming described shortcoming, thereby improve the quality and the production efficiency of product.
Summary of the invention
The purpose of this invention is to provide a kind of semiconductor device and manufacturing approach thereof through the encapsulation of printing adhesives, it overcomes the existing in prior technology defective through improving the existing chip adhesive technology, makes the quality of product and production efficiency be improved.
In order to achieve the above object, technical scheme of the present invention provides a kind of semiconductor device through the encapsulation of printing adhesives, it is characterized in that, comprises:
First lead frame, it is provided with first slide holder, second slide holder of electrical isolation;
Semiconductor chip fixedly is attached on first slide holder and second slide holder through the first printing adhesives that form in printing on some top electrodes of its end face, conduction;
Be arranged on the 3rd slide holder on second lead frame, fixedly be attached on some bottom electrodes of above-mentioned semiconductor chip bottom surface through the second printing adhesives that form in its end face printing, conduction.
Be respectively equipped with number of pins on above-mentioned first slide holder, second slide holder, the some top electrodes that are adhesively fixed on the above-mentioned semiconductor chip on above-mentioned first slide holder, second slide holder are communicated with external component.
Above-mentioned the 3rd slide holder that is adhesively fixed on above-mentioned semiconductor chip bottom surface is provided with number of pins, and some bottom electrodes of above-mentioned semiconductor chip are communicated with external component.
Comprise above-mentioned first printing adhesives several regions, that pass through printing formation on some top electrodes of above-mentioned semiconductor chip respectively.
The above-mentioned above-mentioned first printing adhesives that forms in the printing of semiconductor chip end face has the shape identical or different with above-mentioned top electrodes.
Above-mentioned size of printing adhesives in above-mentioned first of semiconductor chip end face printing formation is equal to or less than the area of above-mentioned top electrodes.
The above-mentioned second printing adhesives size that above-mentioned the 3rd slide holder end face printing forms equates with above-mentioned semiconductor area.
Above-mentioned second printing adhesives size and above-mentioned semiconductor area that above-mentioned the 3rd slide holder end face printing forms are unequal.
Above-mentioned semiconductor device through the encapsulation of printing adhesives; Also comprise plastic-sealed body; It is encapsulated in its inside with above-mentioned first slide holder, second slide holder, semiconductor chip, the 3rd slide holder, and the number of pins that is respectively equipped with on above-mentioned first slide holder, second slide holder, the 3rd slide holder is exposed to outside the above-mentioned plastic-sealed body.
The bottom surface of above-mentioned the 3rd slide holder also is provided with the heat radiation pad, and above-mentioned heat radiation pad is exposed to outside the above-mentioned plastic-sealed body.
A kind of manufacturing approach of passing through the semiconductor device of printing adhesives encapsulation is characterized in that, comprises following steps:
The first printing adhesives of step 1.1 printing conductive on the wafer end face;
The step 1.2 hot setting first printing adhesives;
The second printing adhesives of step 2.1 printing conductive on the 3rd slide holder end face;
The step 2.2 hot setting second printing adhesives
Under step 3. high temperature semiconductor chip end face is printed adhesives through first, bond to simultaneously on first slide holder and second slide holder;
Under step 4. high temperature the 3rd slide holder is bonded to the semiconductor chip bottom surface through the second printing adhesives;
Under step 5. high temperature first printing adhesives, the second printing adhesives are carried out hot setting;
Step 6. is encapsulated in first slide holder, second slide holder, semiconductor chip, the 3rd slide holder in the plastic-sealed body.
Above-mentioned steps 1 is to utilize silk screen or screen printing technology that wafer is printed, and once accomplishes the printing of a wafer, specifically comprises following steps:
Step 1.1.1 offers some openings on silk screen or web plate;
Wherein, above-mentioned some number of openings and position are respectively to the quantity and the position of top electrodes that the first printing adhesives should the wafer end face need be set;
Step 1.1.2 prints in above-mentioned each opening and forms first adhesives;
Wherein, the thickness of above-mentioned first adhesives is the thickness decision by above-mentioned silk screen or web plate upper shed.
Some openings have the shape identical or different with above-mentioned top electrodes among the above-mentioned steps 1.1.1.
The size of some openings is equal to or less than the area of above-mentioned top electrodes among the above-mentioned steps 1.1.1.
Above-mentioned steps 1 also comprises divides and cutting operation wafer, forms some independently steps 1.3 of semiconductor chip.
Above-mentioned steps 2.1 is to utilize silk screen or screen printing technology that the 3rd slide holder end face on second lead frame is printed, and once accomplishes the printing of one second lead frame, specifically comprises following steps:
Step 2.1.1 offers some openings on silk screen or web plate;
Wherein, above-mentioned some number of openings and position are respectively to being provided with the quantity and the position of the 3rd slide holder of the second printing adhesives on should bar second lead frame;
Step 2.1.2 prints in above-mentioned each opening and forms second adhesives;
Wherein, the thickness of above-mentioned second adhesives is the thickness decision by above-mentioned silk screen or web plate upper shed.
The size of some openings is equal to or less than the area of the above-mentioned semiconductor chip that the 3rd slide holder attaches in above-mentioned steps 4 among the above-mentioned steps 2.1.1.
Above-mentioned curing temperature is 110 ℃～130 ℃ in above-mentioned steps 1.2 and the step 2.2;
In the above-mentioned steps 3 above-mentioned semiconductor chip is bonded in above-mentioned first slide holder and second slide holder, the above-mentioned steps 4 temperature when above-mentioned the 3rd slide holder bonded to above-mentioned semiconductor chip at 95 ℃～130 ℃;
Curing temperature to the first printing adhesives and the second printing adhesives in the above-mentioned steps 5 is 175 ℃.
Before the encapsulation, the step of film is pasted in the 3rd slide holder bottom surface that also is included in whole piece second lead frame in above-mentioned steps 6; Above-mentioned film is pasted on the above-mentioned heat radiation pad and on the number of pins that is respectively equipped with of above-mentioned first slide holder, second slide holder, the 3rd slide holder.
Semiconductor device and manufacturing approach thereof through the encapsulation of printing adhesives provided by the present invention; Through respectively on semiconductor chip and the 3rd slide holder the printing adhesives be connected, the size of this adhesives, shape, thickness decide according to the electrical property and the bonding region of required chip surface; And need not utilize conventional point glue or some scolding tin to connect, so semiconductor packages of the present invention has the following advantages:
1, in identical package dimension; Owing to adopted the method for printing adhesives on slide holder; After chip attaches and be bonding, the situation that adhesives overflows can not take place, so can realize the encapsulation of the chip (promptly the size of this chip is identical with slide holder) of maximum area around chip.
2, the adhesives that forms through mode of printing, the thickness uniformity effectively reduces the inclination after chip attaches, and rate of finished products is higher.
3, adopt the adhesives with printing characteristic, than adhesivess such as the soldering paste of available technology adopting or ordinary epoxy resins, after on die bonding to the slide holder, the stress that is produced is also relatively low, reduces the crackle of chip; And this adhesives with printing characteristic has favorable conductive rate and thermal conductivity.
4, adopt the adhesives with printing characteristic, in the process of adhering chip, than prior art, required technological operation temperature is low relatively, so the oxidizing process of lead frame is slow.
5, behind the printing adhesives, but direct-on-line solidifies adhesives, and production is continuous and quick, effectively enhances productivity.
To sum up, semiconductor packages provided by the invention and manufacturing approach thereof can effectively be improved the quality and the performance of semiconductor product, enhance productivity.
Description of drawings
Fig. 1 to Fig. 9 utilizes the gluing step sketch map that connects the mode encapsulated semiconductor device of point in the prior art;
Figure 10 a to Figure 14 a is the step of manufacturing sketch map that passes through the semiconductor device of printing adhesives encapsulation provided by the invention;
Figure 10 b to Figure 14 b is corresponding diagram 10a to Figure 14 a step of manufacturing end view that passes through the semiconductor device of printing adhesives encapsulation provided by the invention;
Figure 15 is the sketch map through MOSFET chip in the semiconductor device of printing adhesives encapsulation provided by the invention;
Figure 16 to Figure 19 is the some structural representations that on the MOSFET chip, apply the first printing adhesives in the manufacturing approach of the semiconductor device through printing adhesives encapsulation provided by the invention;
Figure 20 is the structural representation that on the 3rd slide holder, applies the second printing adhesives in the manufacturing approach of the semiconductor device through printing adhesives encapsulation provided by the invention;
Figure 21 is the schematic flow sheet of the manufacturing approach of the semiconductor device through printing adhesives encapsulation provided by the invention.
Embodiment
Below in conjunction with accompanying drawing,, specify the present invention through preferred specific embodiment.
Semiconductor packages provided by the present invention and manufacturing approach applicable to all semiconductor chips, comprise power MOSFET and IC chip or the like.In the detailed description of following each specific embodiment that provides, be that example specifies the method for packing of the present invention to power mosfet chip with the power mosfet chip; In addition; In described embodiment; With adhesives with printing characteristic (for background technology in the common adhesives that does not possess printing characteristic that adopted show difference, avoid confusion, hereinafter to be referred as " printing adhesives ") be example; As the adhesives that printing forms that passes through that is adopted in the method for packing of the present invention, thereby better understand each item advantage of the present invention and beneficial effect.But should be noted in the discussion above that these specific descriptions and instance are not to be used for limiting scope of the present invention.
Shown in figure 13; It is a kind of semiconductor device provided by the invention through the encapsulation of printing adhesives; It comprises first slide holder 11 and second slide holder 12 that is arranged on first lead frame 10; Be attached to the semiconductor chip 20 on first slide holder 11 and second slide holder 12 and second print the 3rd slide holder 13, the three slide holders 13 that adhesives 32 is attached on the semiconductor chip 20 and be arranged on second lead frame through the first printing adhesives 31 is set through what be provided with.
Wherein first slide holder 11 and second slide holder, 12 mutual electrical isolation are used for bearing semiconductor chip 20, also are respectively equipped with number of pins and extend to outside first lead frame 10, are used for being connected with external component as gate lead G or source lead S.Shown in figure 10, in the present embodiment, the pin of establishing first slide holder 11 is that the number of pins of gate lead G, second slide holder 12 is source lead S, and this gate lead G and source lead S extend in the same side of first lead frame, 10 lower surfaces.
Please cooperate referring to Figure 15 to shown in Figure 19, above-mentioned semiconductor chip 20 is MOSFET chips, and it comprises the top grid 21 and top source electrode 22 (shown in Figure 15) that is arranged on end face, and the bottom drain (not shown) that is arranged on its bottom surface.Semiconductor chip 20 is through printing the first printing adhesives 311,322 that forms conductivity type respectively on top grid 21 and top source electrode 22; Fixedly be attached on first slide holder 11 and second slide holder 12, top grid 21 can be connected with external component through the gate lead G of first slide holder 11, the source lead S of second slide holder 12 respectively with top source electrode 22.
The geomery and the thickness of the first printing adhesives 31 all can be confirmed as required.Print the first printing adhesives 311,312 in the single zone that forms on the top grid 21 of semiconductor chip 20 and the top source electrode 22 respectively; Can be to have (not shown) identical shaped with top grid 21 and top source electrode 22 and size dimension, also can be the first printing adhesives 311,312 (shown in figure 16) of printed dimensions less than top grid 21 or top source electrode 22 areas.
In another embodiment of the present invention; On the top grid 21 of semiconductor chip 20, comprise single zone that printing forms, identical shaped; Measure-alike or less than the first printing adhesives 311 of top grid 21, and printing forms the first printing adhesives 312 (shown in figure 17) of 2 or more a plurality of transverse areas on top source electrode 22; It also can be the first printing adhesives 312 (shown in figure 18) that on top source electrode 22, prints 2 of formation or more a plurality of longitudinal regions.
Or; In another embodiment of the present invention; Shown in figure 19; On the top grid 21 of semiconductor chip 20, formed circle and the size in single zone the first printing adhesives 311, and on top source electrode 22, be provided with the first printing adhesives 312 of circular or oval, the size in single zone less than top source electrode 22 less than top grid 21 through printing.
Like Figure 12 or shown in Figure 20, the end face of above-mentioned the 3rd slide holder 13 is provided with the second printing adhesives 32 of conductivity type, and fixedly is attached on the bottom drain of semiconductor chip 20 through this second printing adhesives 32.The printing area and the thickness of this second printing adhesives 32 are confirmed as required; Have the shape identical or different with semiconductor chip 20; And identical, slightly little or bigger slightly size; As long as the size and the thickness of this second printing adhesives 32 can guarantee to have enough bonding regions, with the 3rd slide holder 13 strong bond to semiconductor chip 20 and do not come off and get final product.
Also being provided with number of pins on the 3rd slide holder 13 extends to outside second lead frame; In the present embodiment; If this number of pins is drain lead D; Like Figure 12 and shown in Figure 13, above-mentioned some drain lead D extend in the second lead frame lower surface, with above-mentioned gate lead G, a side that source lead S is relative.The bottom drain of semiconductor chip 20 is connected with external component through the drain lead D of the 3rd slide holder 13.
Above-mentioned semiconductor device also comprises plastic-sealed body 40, is used for first slide holder 11, second slide holder 12, semiconductor chip 20, the 3rd slide holder 13 are encapsulated in its inside.Make gate lead G, source lead S be exposed to the same side, bottom surface of this plastic-sealed body 40 during encapsulation, and drain lead D is exposed to a relative side of bottom surface; The heat radiation pad 131 that the 3rd slide holder 13 is provided with is exposed to the bottom of plastic-sealed body 40, is used for semiconductor chip 20 is dispelled the heat.
Shown in figure 21; Introduced the above-mentioned manufacturing approach of passing through the semiconductor device of printing adhesives encapsulation in detail; Figure 10 a is the front view of the semiconductor device of corresponding above-mentioned encapsulation step to Figure 14 a, and Figure 10 b is the end view of the semiconductor device of corresponding above-mentioned each step to Figure 14 b.
Shown in figure 10; First slide holder 11 and second slide holder 12 of electrically insulated from one another are set on first lead frame 10, make some source lead S of gate lead G, second slide holder 12 of first slide holder 11 extend to first lead frame, 10 outer the same sides respectively and be connected with external devices.
Afterwards, printing forms the first printing adhesives 31 on semiconductor chip 20, specifically realizes through following steps:
At first on silk screen or web plate, offer some pairs of openings, several semiconductor chips 20 on its corresponding whole crystal column surface.The position of some pairs of openings and MOSFET end face need the position of top grid 21 and top source electrode 22 of the first printing adhesives 31 identical; Opening can be respectively with top grid 21 or top source electrode 22 identical or different shape to be arranged, and identical or smaller slightly size is arranged.
Subsequently, print the one side of whole wafer, in above-mentioned some pairs of openings, form the first printing adhesives 31.The thickness of the described first printing adhesives 31 is the thickness decisions by opening, and just by the thickness decision of silk screen or web plate, it has determined the electrical property and the bond strength of the semiconductor device that final manufacturing is accomplished; When the thickness of this first printing adhesives 31 when thin more; The resistance of semiconductor device is more little; Have good more electrical property, but when the thickness of this first printing adhesives 31 too approached, it also will be because of the not enough chipping situation easily of bond strength; So generally speaking; The thickness of this first printing adhesives 31 is about 25 μ m or be slightly less than 25 μ m, when guaranteeing that semiconductor device has better relatively electrical property, guarantees that also it has certain bond strength and (is about 2～3kg).
The hot setting that the more formed first printing adhesives 31 was carried out about 1 hour, curing temperature is 110 ℃～130 ℃.Cut at last whole wafer with form several independently, on its top grid 21 and top source electrode 22, be respectively equipped with first the printing adhesives 31 semiconductor chip 20.
Shown in figure 11, the top grid 21 and the top source electrode 22 of semiconductor chip 20 is downward, and upside-down mounting simultaneously makes top grid 21 be connected with second slide holder 12 with 11 fixed connections of first slide holder, top source electrode 22 on first slide holder 11 and second slide holder 12.
In the process of flip-chip 20; Need heat first slide holder 11 and second slide holder 12: under the high temperature of 95 ℃～130 ℃ (preferably 120 ℃) chip 20 is being pasted on first slide holder 11 and second slide holder 12 of first lead frame 10 through the first printing adhesives 31 simultaneously; Required time is approximately 200ms; Required pressure is relevant with the size of MOSFET chip 20, and the pressure on the general unit are is 85g/mm
2
Shown in figure 20, use the step similar with above-mentioned printed semiconductor chip 20, printing forms the second printing adhesives 32 on the 3rd slide holder 13.Promptly, corresponding with several the 3rd slide holder 13 positions on whole piece second lead frame through on silk screen or web plate, offering some openings; According to different needs, opening is made as has the shape identical or different, identical, slightly little or bigger slightly size with attaching the MOSFET chip that is connected 20 afterwards.Print whole piece second lead frame then; In above-mentioned some openings, form the thickness second printing adhesives 32 identical with opening thickness (being thickness on silk screen or the web plate); Carry out 1 hour, 110 ℃～130 ℃ hot setting again, obtain the 3rd slide holder 13 that one side is coated with the second printing adhesives 32.
Shown in figure 12, with heat the 3rd slide holder 13 of 95 ℃～130 ℃ (preferably 120 ℃), at unit are 85g/mm
2Pressure under; Behind the time 200ms; Can the 3rd slide holder 13 fixedly be attached on the bottom drain of semiconductor chip 20 through the second printing adhesives 32, the drain lead D that the 3rd slide holder 13 is provided with extends in the gate lead G outside second lead frame, with first slide holder 11, the relative side of source lead S of second slide holder 12.Subsequently in baking box with 175 ℃ of curing of carrying out 1 hour.
Shown in figure 13; And encapsulate through 40 pairs first slide holders of plastic-sealed body 11, second slide holder 12, semiconductor chip 20, the 3rd slide holder 13; Make gate lead G, second slide holder 12 of first slide holder 11 source lead S, be exposed to bottom surface one side of this plastic-sealed body 40, and the drain lead D of the 3rd slide holder 13 is exposed to a relative side of bottom surface.
Shown in figure 14; Since the 3rd slide holder 13 also need be through being exposed to plastic-sealed body 40 131 pairs of semiconductor chips 20 of heat radiation pad of bottom dispel the heat; This heat radiation pad 131 is arranged on the bottom surface of the 3rd slide holder 13, does not promptly apply the one side of the second printing adhesives 32.Therefore before encapsulation, need paste film in relevant position, the whole piece second lead frame back side, plastic-sealed body 40 flows on the gate lead G, source lead S, drain lead D of heat radiation pad 131 and the above-mentioned exposure of exposure when preventing to encapsulate.
First, second lead frame to whole piece cuts at last, to form several individual semiconductor device.Owing in the manufacture process of the semiconductor device that encapsulates through the printing adhesives, do not use any glue or some scolding tin to connect, avoided the existing defective of above-mentioned existing interconnection technique fully, make the quality of product and production efficiency be improved.
Although content of the present invention has been done detailed introduction through above-mentioned preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple modification of the present invention with to substitute all will be conspicuous.Therefore, protection scope of the present invention should be limited appended claim.
Claims (19)
1. the semiconductor device through the encapsulation of printing adhesives is characterized in that, comprises:
First lead frame (10), it is provided with first slide holder (11), second slide holder (12) of electrical isolation;
Semiconductor chip (20) fixedly is attached on first slide holder (11) and second slide holder (12) through the first printing adhesives (31) that form in printing on some top electrodes of its end face, conduction;
Be arranged on the 3rd slide holder (13) on second lead frame, fixedly be attached on some bottom electrodes of said semiconductor chip (20) bottom surface through the second printing adhesives (32) that form in its end face printing, conduction.
2. the semiconductor device that encapsulates through the printing adhesives according to claim 1; It is characterized in that; Said first slide holder (11), second slide holder are respectively equipped with number of pins on (12), and some top electrodes that will be adhesively fixed on the said semiconductor chip (20) on said first slide holder (11), second slide holder (12) are communicated with external component.
3. the semiconductor device that encapsulates through the printing adhesives according to claim 1; It is characterized in that; Said the 3rd slide holder (13) that is adhesively fixed on said semiconductor chip (20) bottom surface is provided with number of pins, and some bottom electrodes of said semiconductor chip (20) are communicated with external component.
4. pass through the semiconductor device of printing adhesives encapsulation according to claim 1, it is characterized in that, comprise the said first printing adhesives (31) several regions, that pass through printing formation on some top electrodes of said semiconductor chip (20) respectively.
5. according to claim 1 through the semiconductor device of printing adhesives encapsulation, it is characterized in that the said said first printing adhesives (31) that forms in semiconductor chip (20) end face printing has the shape identical or different with said top electrodes.
6. according to claim 1 through the semiconductor device of printing adhesives encapsulation, it is characterized in that said size of printing adhesives (31) in said first of semiconductor chip (20) end face printing formation is equal to or less than the area of said top electrodes.
7. according to claim 1 through the semiconductor device of printing adhesives encapsulation, it is characterized in that said second printing adhesives (32) size that said the 3rd slide holder (13) end face printing forms equates with said semiconductor chip (20) area.
8. according to claim 1 through the semiconductor device of printing adhesives encapsulation, it is characterized in that said second printing adhesives (32) size and said semiconductor chip (20) area that said the 3rd slide holder (13) end face printing forms are unequal.
9. the semiconductor device that encapsulates through the printing adhesives according to claim 1; It is characterized in that; Also comprise plastic-sealed body (40); It is encapsulated in its inside with said first slide holder (11), second slide holder (12), semiconductor chip (20), the 3rd slide holder (13), and the number of pins that is respectively equipped with on said first slide holder (11), second slide holder (12), the 3rd slide holder (13) is exposed to outside the said plastic-sealed body (40).
10. like the said semiconductor device through the encapsulation of printing adhesives of claim 9, it is characterized in that the bottom surface of said the 3rd slide holder (13) also is provided with heat radiation pad (131), said heat radiation pad (131) is exposed to outside the said plastic-sealed body (40).
11. the manufacturing approach through the semiconductor device of printing adhesives encapsulation is characterized in that, comprises following steps:
The first printing adhesives (31) of step 1.1 printing conductive on the wafer end face;
The step 1.2 hot setting first printing adhesives (31);
The second printing adhesives (32) of step 2.1 printing conductive on the 3rd slide holder (13) end face;
The step 2.2 hot setting second printing adhesives (32)
Under step 3. high temperature semiconductor chip (20) end face is printed adhesives (31) through first, bond to simultaneously on first slide holder (11) and second slide holder (12);
Under step 4. high temperature the 3rd slide holder (13) is bonded to semiconductor chip (20) bottom surface through the second printing adhesives (32);
Under step 5. high temperature first printing adhesives (31), the second printing adhesives (32) are carried out hot setting;
Step 6. is encapsulated in first slide holder (11), second slide holder (12), semiconductor chip (20), the 3rd slide holder (13) in the plastic-sealed body (40).
12. like the said manufacturing approach of passing through the semiconductor device of printing adhesives encapsulation of claim 11; It is characterized in that; Said step 1 is to utilize silk screen or screen printing technology that wafer is printed, and once accomplishes the printing of a wafer, specifically comprises following steps:
Step 1.1.1 offers some openings on silk screen or web plate;
Wherein, said some number of openings and position are respectively to the quantity and the position of top electrodes that the first printing adhesives (31) should the wafer end face need be set;
Step 1.1.2 prints in said each opening and forms first adhesives (31);
Wherein, the thickness of said first adhesives (31) is the thickness decision by said silk screen or web plate upper shed.
13., it is characterized in that some openings have the shape identical or different with said top electrodes among the said step 1.1.1 like the said manufacturing approach of passing through the semiconductor device of printing adhesives encapsulation of claim 12.
14., it is characterized in that the size of some openings is equal to or less than the area of said top electrodes among the said step 1.1.1 like the said manufacturing approach of passing through the semiconductor device of printing adhesives encapsulation of claim 12.
15., it is characterized in that said step 1 also comprises divides and cutting operation wafer, forms the step 1.3 of some independently semiconductor chips (20) like the said manufacturing approach of passing through the semiconductor device of printing adhesives encapsulation of claim 11.
16. like the said manufacturing approach of passing through the semiconductor device of printing adhesives encapsulation of claim 11; It is characterized in that; Said step 2.1 is to utilize silk screen or screen printing technology that the 3rd slide holder (13) end face on second lead frame is printed; Once accomplish the printing of one second lead frame, specifically comprise following steps:
Step 2.1.1 offers some openings on silk screen or web plate;
Wherein, said some number of openings and position are respectively to being provided with the quantity and the position of the 3rd slide holder (13) of the second printing adhesives (32) on should bar second lead frame;
Step 2.1.2 prints in said each opening and forms second adhesives (32);
Wherein, the thickness of said second adhesives (32) is the thickness decision by said silk screen or web plate upper shed.
17. like the said manufacturing approach of passing through the semiconductor device of printing adhesives encapsulation of claim 16; It is characterized in that the size of some openings is equal to or less than the area of the said semiconductor chip (20) that the 3rd slide holder (13) attaches in said step 4 among the said step 2.1.1.
18. like the said manufacturing approach of passing through the semiconductor device of printing adhesives encapsulation of claim 11, it is characterized in that,
Curing temperature described in said step 1.2 and the step 2.2 is 110 ℃～130 ℃;
In the said step 3 said semiconductor chip (20) is bonded in said first slide holder (11) and second slide holder (12), the said step 4 temperature of said the 3rd slide holder (13) when bonding to said semiconductor chip at 95 ℃～130 ℃;
Curing temperature to the first printing adhesives (31), the second printing adhesives (32) in the said step 5 is 175 ℃.
19., it is characterized in that before the encapsulation, the step of film is pasted in the 3rd slide holder (13) bottom surface that also is included in whole piece second lead frame in said step 6 like the said manufacturing approach of passing through the semiconductor device of printing adhesives encapsulation of claim 11; Said film is pasted on the number of pins that said heat radiation pad (131) is gone up and said first slide holder (11), second slide holder (12), the 3rd slide holder (13) are respectively equipped with.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010226812XA CN102315186A (en) | 2010-06-30 | 2010-06-30 | Semiconductor device packaged with printing bonding materials and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010226812XA CN102315186A (en) | 2010-06-30 | 2010-06-30 | Semiconductor device packaged with printing bonding materials and manufacturing method thereof |
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| CN102315186A true CN102315186A (en) | 2012-01-11 |
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Application publication date: 20120111 |