CN102315072A - 等离子体处理装置及等离子体处理方法 - Google Patents

等离子体处理装置及等离子体处理方法 Download PDF

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Publication number
CN102315072A
CN102315072A CN2011101892619A CN201110189261A CN102315072A CN 102315072 A CN102315072 A CN 102315072A CN 2011101892619 A CN2011101892619 A CN 2011101892619A CN 201110189261 A CN201110189261 A CN 201110189261A CN 102315072 A CN102315072 A CN 102315072A
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CN
China
Prior art keywords
electrode
plasma
interval
mentioned
processing apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011101892619A
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English (en)
Chinese (zh)
Inventor
深谷康太
大野茂
福田正行
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Instruments Co Ltd
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Hitachi High Tech Instruments Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2010262351A external-priority patent/JP2012033457A/ja
Application filed by Hitachi High Tech Instruments Co Ltd filed Critical Hitachi High Tech Instruments Co Ltd
Publication of CN102315072A publication Critical patent/CN102315072A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32128—Radio frequency generated discharge using particular waveforms, e.g. polarised waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
CN2011101892619A 2010-07-02 2011-06-30 等离子体处理装置及等离子体处理方法 Pending CN102315072A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2010-152166 2010-07-02
JP2010152166 2010-07-02
JP2010-262351 2010-11-25
JP2010262351A JP2012033457A (ja) 2010-07-02 2010-11-25 プラズマ処理装置

Publications (1)

Publication Number Publication Date
CN102315072A true CN102315072A (zh) 2012-01-11

Family

ID=45428123

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011101892619A Pending CN102315072A (zh) 2010-07-02 2011-06-30 等离子体处理装置及等离子体处理方法

Country Status (2)

Country Link
KR (1) KR101254902B1 (ko)
CN (1) CN102315072A (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107592855A (zh) * 2015-05-04 2018-01-16 金正镒 低温水中等离子体发生装置
CN109462930A (zh) * 2018-12-26 2019-03-12 哈尔滨工业大学 一种气体流动环境下利用双地电极强化等离子体放电的方法
CN109477220A (zh) * 2016-06-28 2019-03-15 东芝三菱电机产业系统株式会社 活性气体生成装置和成膜处理装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017191942A1 (ko) * 2016-05-02 2017-11-09 성균관대학교 산학협력단 플라즈마 프레스 장치 및 이를 이용한 접합방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001049441A (ja) * 1999-08-10 2001-02-20 Kanegafuchi Chem Ind Co Ltd プラズマｃｖｄ装置およびプラズマｃｖｄ装置を用いた薄膜堆積方法
US20060254717A1 (en) * 2005-05-11 2006-11-16 Hiroyuki Kobayashi Plasma processing apparatus
CN101170053A (zh) * 2006-10-27 2008-04-30 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法以及存储介质

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001049441A (ja) * 1999-08-10 2001-02-20 Kanegafuchi Chem Ind Co Ltd プラズマｃｖｄ装置およびプラズマｃｖｄ装置を用いた薄膜堆積方法
US20060254717A1 (en) * 2005-05-11 2006-11-16 Hiroyuki Kobayashi Plasma processing apparatus
CN101170053A (zh) * 2006-10-27 2008-04-30 东京毅力科创株式会社 等离子体处理装置和等离子体处理方法以及存储介质

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107592855A (zh) * 2015-05-04 2018-01-16 金正镒 低温水中等离子体发生装置
CN109477220A (zh) * 2016-06-28 2019-03-15 东芝三菱电机产业系统株式会社 活性气体生成装置和成膜处理装置
CN109477220B (zh) * 2016-06-28 2021-02-09 东芝三菱电机产业系统株式会社 活性气体生成装置和成膜处理装置
CN109462930A (zh) * 2018-12-26 2019-03-12 哈尔滨工业大学 一种气体流动环境下利用双地电极强化等离子体放电的方法

Also Published As

Publication number Publication date
KR101254902B1 (ko) 2013-04-18
KR20120003382A (ko) 2012-01-10

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Application publication date: 20120111