CN102315068B - Separation plate device for double-cavity structure plasma body soaking ion injection - Google Patents
Separation plate device for double-cavity structure plasma body soaking ion injection Download PDFInfo
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- CN102315068B CN102315068B CN201010219788.7A CN201010219788A CN102315068B CN 102315068 B CN102315068 B CN 102315068B CN 201010219788 A CN201010219788 A CN 201010219788A CN 102315068 B CN102315068 B CN 102315068B
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- dividing plate
- separation plate
- plasma
- ion injection
- plate device
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- 238000002347 injection Methods 0.000 title abstract description 14
- 239000007924 injection Substances 0.000 title abstract description 14
- 238000000926 separation method Methods 0.000 title abstract 12
- 238000002791 soaking Methods 0.000 title abstract 2
- 238000002513 implantation Methods 0.000 claims description 29
- 238000007654 immersion Methods 0.000 claims description 10
- 230000036461 convulsion Effects 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000009826 distribution Methods 0.000 abstract description 9
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 206010028347 Muscle twitching Diseases 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000006698 induction Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- LUTSRLYCMSCGCS-BWOMAWGNSA-N [(3s,8r,9s,10r,13s)-10,13-dimethyl-17-oxo-1,2,3,4,7,8,9,11,12,16-decahydrocyclopenta[a]phenanthren-3-yl] acetate Chemical compound C([C@@H]12)C[C@]3(C)C(=O)CC=C3[C@@H]1CC=C1[C@]2(C)CC[C@H](OC(=O)C)C1 LUTSRLYCMSCGCS-BWOMAWGNSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- Plasma Technology (AREA)
Abstract
The invention discloses a separation plate device for double-cavity structure plasma body soaking ion injection, which comprises a separation plate A and a separation plate B, wherein the separation plate A and the separation plate B are arranged between an ion injection cavity and a doping source cavity, the separation plate A and the separation plate B are identical and can be parallelly pulled, and a plurality of round holes are distributed on the separation plate A and the separation plate B. The size of coincident round holes can be changed through pulling the separation plate device, so the dispersing speed of plasma bodies from the doping source cavity to the ion injection cavity can be controlled, the distribution of the plasma bodies in the ion injection cavity can also be controlled through the distribution of the round holes, the plasma bodies can be uniformly dispersed into the ion injection cavity through regulating the separation plate device, and the uniform ion injection of a large-area substrate can be finally realized.
Description
Technical field
The present invention relates to plasma immersion ion and inject field, particularly a kind of baffle plate device injecting for double-cavity structure plasma immersion ion.
Background technology
Plasma immersion ion injects (Plasma Immersion Ion Implantation, PIII) technology be one for the manufacture of the doping techniques of super shallow junction and SOI (Silicon On Insulator) structure, it is that substrate is directly immersed in plasma, when chip bench adds negative pulse bias voltage, reciprocal in electron plasma frequency
time scale in, the electronics in substrate surface annex plasma is ostracised, the larger ion of remaining inertia forms ion parent sheath layer.Subsequently, in ion plasma frequency
time in ion is accelerated is injected in substrate, this causes border between plasma and sheath layer to the propelling of plasma region, the new ion exposing is extracted again, sheath layer is expanded along with the motion of ion.In longer time yardstick, sheath layer is stable at the Child-Langmuir equation sheath layer (motion of plasma intermediate ion meets Child-Langmuir equation) of stable state.
PIII compares and has many good qualities with traditional beamline ion implanters injection technique: first PIII does not have the devices such as traditional the ion extraction, focusing, scanning, and equipment is simple, and cost is low; Secondly PIII is non-scanning type doping, can realize large area and inject simultaneously, and injection efficiency is high; PIII is outline-of-sight process again, can realize the doping of 3 D complex structure workpiece; Also have PIII doping ion energy distribution very wide, the restriction of Implantation Energy gear shaper without theoretical, can realize high dose, low energy ion doping.
When middle and high-energy ion doping injects, there is a difficult problem in PIII.It is the problem of the difficult electric discharge of low pressure.When middle and high-energy ion doping injects, require electric discharge pressure lower, and gas is difficult to realize sparking electric discharge during low pressure.Reason is the Pelletier of University of California-Berkeley (Universityof Califomia at Berkeley), Jacques and Anders, and Andre provides chamber electric discharge pressure and the rule-of-thumb relation that injects bias voltage:
while being large bias voltage injection, need low pressure, as V
o=100kV, p < 10
-4torr, and low pressure discharge is difficult.Root is that electric discharge air pressure is lower, and the mean free path of Ionized by Electrons is just larger, as p=10
-4torr, λ=11.5m
During PIII, the implantation dosage of the implantation dosage compare Gao， edge at the injection substrate center place that during due to Implantation, the edge effect of chip bench makes is lower.The heterogeneity problem of injecting along with the increase (100mm is to 200mm to 300mm) of sizes of substrate is more obvious.How on large area substrates, to realize uniform Implantation urgently to be resolved hurrily.The uniformity of Implantation is to weigh the major parameter index of PIII system.During ICP PIII, the ion in the high-density plasma of generation is directly injected in substrate in the situation that injecting electrode adds pulsed bias, can not realize the injection of different plasma density under identical discharging condition.
Summary of the invention
One of object of the present invention is to provide a kind of baffle plate device of realizing even Implantation for plasma immersion ion implantation system.
According to an aspect of the present invention, a kind of baffle plate device injecting for double-cavity structure plasma immersion ion is provided, comprises dividing plate A and dividing plate B, described dividing plate A and dividing plate B are arranged between Implantation chamber and doped source chamber, described dividing plate A is identical with dividing plate B, and can parallelly twitch; Described dividing plate A and dividing plate B several circular holes that distributing.
Described circular hole is random or is evenly distributed on the centre of described dividing plate A and dividing plate B.
Described Circularhole diameter magnitude range be 0.1mm to 1mm, described circular hole area duty ratio is 5% to 30%.
The thickness range of described dividing plate A and dividing plate B is that 1mm is to 1cm.
Described dividing plate A and dividing plate B are made by polytetrafluoro or graphite.
By the baffle plate device injecting for double-cavity structure plasma immersion ion provided by the invention, size and the inhomogeneity control of Implantation chamber plasma density have been realized, make plasma be diffused into equably Implantation chamber, thereby finally realize the even Implantation of large area substrates.
Accompanying drawing explanation
Fig. 1 shows traditional IC P PIII system schematic;
Fig. 2 shows the double-cavity structure PIII schematic diagram that the embodiment of the present invention provides;
Fig. 3 shows the equally distributed dividing plate A of circular hole or B schematic diagram in the embodiment of the present invention;
Fig. 4 shows dividing plate A or the B schematic diagram of circular hole random distribution in the embodiment of the present invention;
Schematic diagram when Fig. 5 shows the twitch of embodiment of the present invention median septum;
Fig. 6 dividing plate hole when twitching changes schematic diagram.
Embodiment
Tradition comprises four most of compositions the such as vacuum system, power unit, injecting electrode part and cooling system with the PIII system of ICP discharge mode as shown in Figure 1.Wherein, vacuum system is comprised of nozzle of air supply 111, gas outlet 112 and Implantation chamber 114.Power unit comprises for gas discharge and produces the radio-frequency power supply of plasma and for the direct current pulse power source 125 of Implantation.Wherein, radio-frequency power supply is comprised of radio frequency generation source 122 and radio frequency L-type adaptation 123 again.Traditional IC P PIII first puts into print 181 to be injected on the chip bench 171 of Implantation chamber 114 during work, and the rear sundstrand pump (consisting of mechanical pump and molecular pump) that utilizes makes Implantation chamber 114 vacuum degrees reach rapidly the required vacuum of injection experiments (as 1 * 10
-4pa or 1 * 10
-5pa).Then by air inlet 111, pass into experimental gas (as PH
3, B
2h
6, AsH
3deng), experimental gas is under the effect of radio-frequency power supply, and the discharge mode by induction coil 151 with ICP is coupled in experimental gas, makes gas discharge partial ionization produce plasma.Ion in plasma accelerates to be injected in substrate 181 under the effect of pulsed bias that injecting electrode adds (being produced by direct current pulse power source 125), thereby realize ion doping, injects.Gas after injection is taken away by gas outlet 112 pump (consisting of mechanical pump and molecular pump) that is combined.The effect of radio frequency adaptation 123 is that the forward power that added radio-frequency power is added in plasma is maximum, reflection power minimum (being preferably zero); Cooling system is cooling for whole system when work, cooling as molecular pump, injecting electrode cooling etc.
As shown in Figure 2, the plasma immersion ion implantation device that the embodiment of the present invention proposes comprises four major parts such as vacuum system, power unit, injecting electrode part and cooling system.Vacuum system is comprised of nozzle of air supply 111, gas outlet 112, doped source chamber 213 and Implantation chamber 114.Power unit produces source 122, radio frequency adaptation 123, direct current pulse power source 125, doped source chamber 213, Implantation chamber 114, induction coil 151, baffle plate device 261, chip bench 171 and substrate 181 by nozzle of air supply 111, radio frequency.Experimental gas (comprising PH3, B2H6 or AsH3) enters doped source chamber 213 by nozzle of air supply 111.Radio frequency produces source 122 under radio frequency L-type adaptation regulates, and by induction coil 151, makes radio-frequency power supply power in inductive coupled mode, be coupled to the plasma of doped source chamber 213.Air pressure range in doped source chamber 213 be 0.1Pa to 10Pa, hyperbar gas is by ICP discharge mode discharge generation high-density plasma.Adopt high-pressure discharge to be because pressure is higher in the constant situation of other condition (as chamber structure, radio-frequency power size etc.), the mean free path of electronics is shorter, the highdensity plasma of the easier discharge generation of gas.
Plasma is diffused into Implantation chamber 114 by baffle plate device 261.Wherein, baffle plate device 261 have a plurality of evenly or the circular hole 262 (Fig. 3, Fig. 4) of random distribution, the size of circular hole 262, number and distribution had both affected the diffusion velocity of plasma from doped source chamber 213 to Implantation chamber 114, affected again density and the uniformity of Implantation chamber 114 ionic mediums.For example, circular hole 262 is large, and plasma is fast to the diffusion velocity of Implantation chamber 114 from doped source chamber 213, otherwise, slow.If circular hole 262 is evenly distributed, plasma diffusion is even.By changing the size in hole on baffle plate device 261 and distributing, can make plasma be diffused into equably Implantation chamber 114.The plasma that is diffused into Implantation chamber 114 is injected in the substrate 181 on chip bench 171 under substrate 181 adds the effect of DC pulse bias voltage of direct current pulse power source 125 products, thereby realize ion doping, injects.
With reference to Fig. 3,4, baffle plate device 261 is comprised of two identical dividing plates that can parallel twitch.Even or the several circular holes 262 of random distribution of every baffle surface, Circularhole diameter magnitude range be 0.1mm to 1mm, the circular hole area duty cycle range ratio of the disk gross area (the circular hole gross area with) is 5% to 30%.1mm is to 1cm for block board thickness scope.Separator material is polytetrafluoro or graphite.Circular hole even or random distribution can make the plasma of 213 li of doped source chambers more evenly be diffused into Implantation chamber 114, can control again density and the uniformity of the plasma of Implantation chamber 114.
Schematic diagram when the dividing plate B that is baffle plate device with reference to Fig. 5 twitches, Fig. 6 is the schematic top plan view in two dividing plates of baffle plate device 261 hole while twitching, and is 301 while not twitching, during different twitch dynamics, schematic diagram is respectively 302,303,304,305.Baffle plate device even or random distribution makes plasma more evenly be diffused into Implantation chamber 114 from doped source chamber 213, the twitch of dividing plate has realized the control of plasma from doped source chamber 213 to Implantation chamber diffusion velocity, thereby finally realizes the even Implantation of large area substrates.
Above-described embodiment is preferably execution mode of the present invention; but embodiments of the present invention are not restricted to the described embodiments; other any do not deviate from change, the modification done under Spirit Essence of the present invention and principle, substitutes, combination, simplify; all should be equivalent substitute mode, within being included in protection scope of the present invention.
Claims (5)
1. the baffle plate device injecting for double-cavity structure plasma immersion ion, is characterized in that, comprising:
Dividing plate A and dividing plate B, described dividing plate A and dividing plate B are arranged between Implantation chamber and doped source chamber, and described dividing plate A is identical with dividing plate B, and can parallelly twitch; Described dividing plate A and dividing plate B several circular holes that distributing.
2. baffle plate device according to claim 1, is characterized in that:
Described circular hole is random or is evenly distributed on the centre of described dividing plate A and dividing plate B.
3. baffle plate device according to claim 2, is characterized in that:
Described Circularhole diameter magnitude range be 0.1mm to 1mm, described circular hole area duty ratio is 5% to 30%.
4. baffle plate device according to claim 1, is characterized in that:
The thickness range of described dividing plate A and dividing plate B is that 1mm is to 1cm.
5. baffle plate device according to claim 1, is characterized in that:
Described dividing plate A and dividing plate B are made by polytetrafluoro or graphite.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010219788.7A CN102315068B (en) | 2010-07-07 | 2010-07-07 | Separation plate device for double-cavity structure plasma body soaking ion injection |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010219788.7A CN102315068B (en) | 2010-07-07 | 2010-07-07 | Separation plate device for double-cavity structure plasma body soaking ion injection |
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|---|---|
| CN102315068A CN102315068A (en) | 2012-01-11 |
| CN102315068B true CN102315068B (en) | 2014-01-29 |
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| JP4231417B2 (en) * | 2004-01-07 | 2009-02-25 | パナソニック株式会社 | Substrate processing apparatus and cleaning method thereof |
| US7531469B2 (en) * | 2004-10-23 | 2009-05-12 | Applied Materials, Inc. | Dosimetry using optical emission spectroscopy/residual gas analyzer in conjunction with ion current |
| DE102007063380A1 (en) * | 2007-12-20 | 2009-06-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Coating device for coating a substrate under atmospheric conditions |
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Effective date of registration: 20240409 Address after: Room 108, floor 1, building 4, No. 2 dacuodeng Hutong, Dongcheng District, Beijing 100010 Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd. Country or region after: China Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences Country or region before: China |
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