CN102315068A - Baffle plate device for plasma immersion ion implantation with double-chamber structure - Google Patents
Baffle plate device for plasma immersion ion implantation with double-chamber structure Download PDFInfo
- Publication number
- CN102315068A CN102315068A CN2010102197887A CN201010219788A CN102315068A CN 102315068 A CN102315068 A CN 102315068A CN 2010102197887 A CN2010102197887 A CN 2010102197887A CN 201010219788 A CN201010219788 A CN 201010219788A CN 102315068 A CN102315068 A CN 102315068A
- Authority
- CN
- China
- Prior art keywords
- dividing plate
- plasma
- ion
- chamber
- partition plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007654 immersion Methods 0.000 title claims abstract description 12
- 238000005468 ion implantation Methods 0.000 title abstract description 8
- 230000036461 convulsion Effects 0.000 claims description 7
- 230000009977 dual effect Effects 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000009792 diffusion process Methods 0.000 abstract description 5
- 238000005192 partition Methods 0.000 abstract 11
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 238000001816 cooling Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 206010028347 Muscle twitching Diseases 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 4
- 230000006698 induction Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Landscapes
- Electron Sources, Ion Sources (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
Abstract
The invention discloses a partition plate device for plasma immersion ion implantation with a double-chamber structure, which comprises a partition plate A and a partition plate B, wherein the partition plate A and the partition plate B are arranged between an ion implantation chamber and a doping source chamber, and the partition plate A and the partition plate B are identical and can be drawn in parallel; the partition board A and the partition board B are distributed with a plurality of round holes. The size of the coincident circular holes can be changed by pulling the partition plate device, so that the diffusion speed of the plasma from the doping source chamber to the ion implantation chamber is controlled, the distribution of the circular holes can also be controlled, the plasma can be uniformly diffused to the ion implantation chamber by adjusting the partition plate device, and the uniform ion implantation of the large-area substrate is finally realized.
Description
Technical field
The present invention relates to plasma immersion ion and inject the field, particularly a kind of baffle plate device that is used for the injection of dual cavity structure plasma immersion ion.
Background technology
Plasma immersion ion injects (Plasma Immersion Ion Implantation; PIII) technology is a doping techniques that is used to make ultra shallow junction and SOI (Silicon On Insulator) structure; It is directly to be immersed in substrate in the plasma; When chip bench adds the negative pulse bias voltage; In the time scale of electron plasma frequency
reciprocal; Electronics in the substrate surface annex plasma is ostracised, and the ion that remaining inertia is bigger forms ion parent sheath layer.Subsequently; Ion is accelerated and is injected in the substrate in the time of ion plasma frequency
; This causes the border between plasma and the sheath layer to advance to the plasma zone; The new ion that exposes is extracted out again, and promptly the sheath layer is expanded along with the motion of ion.In the longer time yardstick, the sheath layer is stable at the Child-Langmuir equation sheath layer (Child-Langmuir equation is satisfied in the motion of plasma intermediate ion) of stable state.
PIII compares with traditional beamline ion implanters injection technique and has many good qualities: at first PIII does not have devices such as traditional The ion extraction, focusing, scanning, and equipment is simple, and cost is low; Secondly PIII is that non-scanning type mixes, and can realize that large tracts of land injects simultaneously, and injection efficiency is high; PIII is the outline-of-sight process once more, can realize the doping of 3 D complex structure workpiece; Also have PIII dopant ion Energy distribution very wide, inject the restriction of energy gear shaper without theoretical, can realize that high dose, low energy ion mix.
There is a difficult problem in PIII when the middle and high-energy ion doping injects.It is the problem of the difficult discharge of low pressure.The middle and high-energy ion doping requires discharge pressure lower when injecting, and gas is difficult to realize the sparking discharge during low pressure.Reason is the Pelletier of University of California-Berkeley (Universityof Califomia at Berkeley), and Jacques and Anders, Andre provide chamber discharge pressure and the rule-of-thumb relation that injects bias voltage:
Be that big bias voltage needs low pressure when injecting, like V
o=100kV, p＜10
-4Torr, and low pressure discharge is difficult.Root is that discharge air pressure is low more, and the mean free path of electronics ionization is just big more, like p=10
-4Torr, λ=11.5m
During PIII, the implantation dosage at the injection substrate center place that the edge effect of chip bench makes when injecting owing to ion is higher, and the implantation dosage of edge is lower.The heterogeneity problem of injecting along with the increase (100mm is to 200mm to 300mm) of sizes of substrate is more obvious.How to realize on large area substrates that the uniform ion injection needs to be resolved hurrily.The uniformity that ion injects is to weigh the major parameter index of PIII system.During ICP PIII, the ion in the high-density plasma of generation directly is injected in the substrate under injecting electrode adds the situation of pulsed bias, and identical discharging condition can not be realized the injection of different plasma density down.
Summary of the invention
One of the object of the invention provides a kind of baffle plate device that the plasma immersion ion injected system realizes that even ion injects that is used for.
According to an aspect of the present invention; A kind of baffle plate device that dual cavity structure plasma immersion ion injects that is used for is provided, comprises dividing plate A and dividing plate B, said dividing plate A and dividing plate B are arranged between ion injecting chamber and the doped source chamber; Said dividing plate A is identical with dividing plate B, and can parallelly twitch; Said dividing plate A and dividing plate B several circular holes that distributing.
Said circular hole is at random or is evenly distributed on the centre of said dividing plate A and dividing plate B.
Said Circularhole diameter magnitude range be 0.1mm to 1mm, said circular hole area duty ratio is 5% to 30%.
The thickness range of said dividing plate A and dividing plate B is that 1mm is to 1cm.
Said dividing plate A and dividing plate B are by gathering tetrafluoro or graphite is processed.
Through the baffle plate device that is used for the injection of dual cavity structure plasma immersion ion provided by the invention; The size and the inhomogeneity control of ion injecting chamber plasma density have been realized; Make plasma be diffused into ion injecting chamber equably, thereby the even ion of finally realizing large area substrates inject.
Description of drawings
Fig. 1 shows traditional IC P PIII system schematic;
Fig. 2 shows the dual cavity structure PIII sketch map that the embodiment of the invention provides;
Fig. 3 shows equally distributed dividing plate A of circular hole or B sketch map in the embodiment of the invention;
Fig. 4 shows the dividing plate A or the B sketch map of circular hole random distribution in the embodiment of the invention;
Sketch map when Fig. 5 shows the twitch of embodiment of the invention median septum;
Fig. 6 dividing plate hole when twitching changes sketch map.
Embodiment
Tradition as shown in Figure 1 comprises four most of compositions such as vacuum system, power unit, injecting electrode part and cooling system with the PIII system of ICP discharge mode.Wherein, vacuum system is made up of nozzle of air supply 111, gas outlet 112 and ion injecting chamber 114.Power unit comprises that being used for gas discharge produces the radio-frequency power supply of plasma and be used for the direct current pulse power source 125 that ion injects.Wherein, radio-frequency power supply is made up of with radio frequency L type adaptation 123 radio frequency generation source 122 again.Traditional IC P PIII work the time will be waited to inject print 181 earlier and put on the chip bench 171 of ion injecting chamber 114, after utilize sundstrand pump (constituting) to make ion injecting chamber 114 vacuum degrees reach the required vacuum of injection experiments rapidly (as 1 * 10 by mechanical pump and molecular pump
-4Pa or 1 * 10
-5Pa).Then feed experimental gas (like PH through air inlet 111
3, B
2H
6, AsH
3Deng), experimental gas is coupled in the experimental gas through the discharge mode of induction coil 151 with ICP under the effect of radio-frequency power supply, makes the gas discharge partial ionization produce plasma.Ion in the plasma quickens to be injected in the substrate 181 under the effect of pulsed bias that injecting electrode adds (being produced by direct current pulse power source 125), thereby realizes that ion doping injects.Gas after the injection is taken away through gas outlet 112 pump (being made up of mechanical pump and molecular pump) that is combined.The effect of radio frequency adaptation 123 be make to add the forward power that radio-frequency power is added in the plasma maximum, reflection power minimum (being preferably zero); Cooling when cooling system is used for whole system work, like the cooling of molecular pump, the cooling of injecting electrode etc.
As shown in Figure 2, the plasma immersion ion implantation device that the embodiment of the invention proposes comprises four major parts such as vacuum system, power unit, injecting electrode part and cooling system.Vacuum system is made up of nozzle of air supply 111, gas outlet 112, doped source chamber 213 and ion injecting chamber 114.Power unit produces source 122, radio frequency adaptation 123, direct current pulse power source 125, doped source chamber 213, ion injecting chamber 114, induction coil 151, baffle plate device 261, chip bench 171 and substrate 181 by nozzle of air supply 111, radio frequency.Experimental gas (comprising PH3, B2H6 or AsH3) gets into doped source chamber 213 through nozzle of air supply 111.Radio frequency produces source 122 under radio frequency L type adaptation is regulated, and makes radio-frequency power supply power be coupled to the plasma of doped source chamber 213 with inductive coupled mode through induction coil 151.Air pressure range in the doped source chamber 213 be 0.1Pa to 10Pa, hyperbar gas is through ICP discharge mode discharge generation high-density plasma.Adopt high-pressure discharge to be because pressure is high more under the constant situation of other condition (like chamber structure, radio-frequency power size etc.), the mean free path of electronics is short more, and gas is the highdensity plasma of discharge generation more easily.
Plasma is diffused into ion injecting chamber 114 through baffle plate device 261.Wherein, Baffle plate device 261 have a plurality of evenly or the circular hole 262 (Fig. 3, Fig. 4) of random distribution; The size of circular hole 262, number and distribution had both influenced the diffusion velocity of plasma from doped source chamber 213 to ion injecting chamber 114, influenced the density and the uniformity of ion injecting chamber 114 ionic mediums again.For example, circular hole 262 is big, and then plasma is fast to the diffusion velocity of ion injecting chamber 114 from doped source chamber 213, otherwise, then slow.If circular hole 262 is evenly distributed, then plasma diffusion is even.Size through changing hole on the baffle plate device 261 can make plasma be diffused into ion injecting chamber 114 equably with distributing.The plasma that is diffused into ion injecting chamber 114 is injected in the substrate 181 on the chip bench 171 under substrate 181 adds the effect of DC pulse bias voltage of direct current pulse power source 125 products, thereby realizes that ion doping injects.
With reference to Fig. 3,4, baffle plate device 261 is made up of two identical dividing plates that can parallel twitch.Every baffle surface evenly or several circular holes 262 of random distribution, the Circularhole diameter magnitude range be 0.1mm to 1mm, the circular hole area duty cycle range ratio of the disk gross area (the circular hole gross area with) is 5% to 30%.1mm is to 1cm for the block board thickness scope.Separator material is for gathering tetrafluoro or graphite.Evenly or the circular hole of random distribution can make the plasma of 213 li of doped source chambers more evenly be diffused into ion injecting chamber 114, can control the density and the uniformity of the plasma of ion injecting chamber 114 again.
With reference to Fig. 5 be baffle plate device the sketch map of dividing plate B when twitching, the schematic top plan view in hole was 301 when not twitching when Fig. 6 be two dividing plates twitches of baffle plate device 261, sketch map is respectively 302,303,304,305 during different twitch dynamics.Baffle plate device even or random distribution makes plasma more evenly be diffused into ion injecting chamber 114 from doped source chamber 213; The twitch of dividing plate has realized plasma from the control of doped source chamber 213 to ion injecting chamber diffusion velocity, thereby the even ion of finally realizing large area substrates injects.
The foregoing description is a preferred implementation of the present invention; But execution mode of the present invention is not restricted to the described embodiments; Other any do not deviate from change, the modification done under spirit of the present invention and the principle, substitutes, combination, simplify; All should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (5)
1. one kind is used for the baffle plate device that dual cavity structure plasma immersion ion injects, and it is characterized in that, comprising:
Dividing plate A and dividing plate B, said dividing plate A and dividing plate B are arranged between ion injecting chamber and the doped source chamber, and said dividing plate A is identical with dividing plate B, and can parallelly twitch; Said dividing plate A and dividing plate B several circular holes that distributing.
2. baffle plate device according to claim 1 is characterized in that:
Said circular hole is at random or is evenly distributed on the centre of said dividing plate A and dividing plate B.
3. baffle plate device according to claim 2 is characterized in that:
Said Circularhole diameter magnitude range be 0.1mm to 1mm, said circular hole area duty ratio is 5% to 30%.
4. baffle plate device according to claim 1 is characterized in that:
The thickness range of said dividing plate A and dividing plate B is that 1mm is to 1cm.
5. baffle plate device according to claim 1 is characterized in that:
Said dividing plate A and dividing plate B are by gathering tetrafluoro or graphite is processed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010219788.7A CN102315068B (en) | 2010-07-07 | 2010-07-07 | Baffle plate device for plasma immersion ion implantation with double-chamber structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010219788.7A CN102315068B (en) | 2010-07-07 | 2010-07-07 | Baffle plate device for plasma immersion ion implantation with double-chamber structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102315068A true CN102315068A (en) | 2012-01-11 |
| CN102315068B CN102315068B (en) | 2014-01-29 |
Family
ID=45428121
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010219788.7A Active CN102315068B (en) | 2010-07-07 | 2010-07-07 | Baffle plate device for plasma immersion ion implantation with double-chamber structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102315068B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050145170A1 (en) * | 2004-01-07 | 2005-07-07 | Matsushita Electric Industrial Co., Ltd. | Substrate processing apparatus and cleaning method therefor |
| CN101256942A (en) * | 2007-03-02 | 2008-09-03 | 应用材料股份有限公司 | Dosimetry using optical emission spectroscopy/residual gas analyzer in conjunction with ion current |
| WO2009080010A1 (en) * | 2007-12-20 | 2009-07-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Coating device for coating a substrate under atmospheric conditions |
-
2010
- 2010-07-07 CN CN201010219788.7A patent/CN102315068B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050145170A1 (en) * | 2004-01-07 | 2005-07-07 | Matsushita Electric Industrial Co., Ltd. | Substrate processing apparatus and cleaning method therefor |
| CN101256942A (en) * | 2007-03-02 | 2008-09-03 | 应用材料股份有限公司 | Dosimetry using optical emission spectroscopy/residual gas analyzer in conjunction with ion current |
| WO2009080010A1 (en) * | 2007-12-20 | 2009-07-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Coating device for coating a substrate under atmospheric conditions |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102315068B (en) | 2014-01-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101409925B1 (en) | Method of manufacturing solar cell using substrate | |
| US9741894B2 (en) | Ion implant system having grid assembly | |
| US20150332893A1 (en) | Surface Treatment Apparatus | |
| JP5610543B2 (en) | Ion source | |
| TW509964B (en) | Plasma generating apparatus and semiconductor manufacturing method | |
| US7326937B2 (en) | Plasma ion implantation systems and methods using solid source of dopant material | |
| JP2012511104A (en) | Excitation gas injection for ion implantation control | |
| KR101919514B1 (en) | Interdigitated back contact solar cell and its method of processing a substrate | |
| CN102312210A (en) | Plasma immersion ion implantation system | |
| CN104900470A (en) | Plasma-based material modification using a plasma source with magnetic confinement | |
| CN102296275B (en) | Method for uniformly implanting ions into substrate | |
| CN201785484U (en) | Baffle plate device for plasma immersion ion implantation with double-chamber structure | |
| CN102296276A (en) | Plasma immersion ion implantation apparatus | |
| CN201785483U (en) | Plasma immersion ion implantation system | |
| CN201785482U (en) | Plasma immersion ion implantation apparatus | |
| CN102315068B (en) | Baffle plate device for plasma immersion ion implantation with double-chamber structure | |
| US12002852B2 (en) | System and technique for creating implanted regions using multiple tilt angles | |
| CN101922046B (en) | Plasma immersion injection device | |
| CN107267957A (en) | A kind of device and chemical gaseous phase depositing process for chemical vapor deposition | |
| US20240136144A1 (en) | Ion source structure of ion implanter and its operation method | |
| CN102021524B (en) | Device for separating ions with different masses in plasma immersion ion implantation | |
| KR20060115297A (en) | In-line plasma doping system for solar cells manufacturing | |
| KR101616304B1 (en) | Selective doping system for solar cell by using atmospheric plasma jet | |
| KR20100121981A (en) | Plasma doping method using frequency modulation | |
| KR101093714B1 (en) | A large current and large area ion beam extracting apparatus for generating and accelerating of various ions with a large uniform irradiation area |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20240409 Address after: Room 108, floor 1, building 4, No. 2 dacuodeng Hutong, Dongcheng District, Beijing 100010 Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd. Country or region after: China Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences Country or region before: China |