CN201785482U - Plasma immersion ion implantation device - Google Patents
Plasma immersion ion implantation device Download PDFInfo
- Publication number
- CN201785482U CN201785482U CN2010202380002U CN201020238000U CN201785482U CN 201785482 U CN201785482 U CN 201785482U CN 2010202380002 U CN2010202380002 U CN 2010202380002U CN 201020238000 U CN201020238000 U CN 201020238000U CN 201785482 U CN201785482 U CN 201785482U
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- liner
- ion implantation
- plasma immersion
- immersion ion
- silicon
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Abstract
The utility model discloses a plasma immersion ion implantation device, which comprises an ion implantation cavity, a power source portion, an implantation electrode portion and a vacuum portion. Detachable liners arranged on the inner peripheral wall of the ion implantation cavity include a top liner, two lateral wall liners and a bottom liner; the bottom liner is arranged at the bottom of the ion implantation cavity; the lateral wall liners are arranged above the bottom liner; and the top liner can be arranged above the lateral wall liners. The plasma immersion ion implantation device not only realizes easy detachment of the plasma immersion ion implantation cavity liners and facilitates cleaning of the cavity liners after implantation for a period of time, but also realizes isolation of the inner cavity walls from plasma in immersion ion implantation, thereby reducing pollution to the inner cavity walls in plasma immersion ion implantation. Simultaneously, the plasma immersion ion implantation device further enables gas entering a reaction cavity to be evener in distribution, decreases edge effects of implantation substrate tables, and accordingly improves evenness of plasma immersion ion implantation.
Description
Technical field
The utility model relates to semiconductor processing techniques, has the plasma immersion ion injection device of the double even device of air of detachable liner specifically.
Background technology
(Ion Beam Ion Implantation IBII) is widely used in material modification and semiconductor technology in traditional beamline ion implanters injection.It mainly is made up of several sections such as ion source, mass separator, accelerator, scanning equipment, vacuum section and cooling systems.Ion source partly produces plasma body, ion in the plasma body is extracted the ion that obtains single quality single energy through mass separator and accelerator, ion is injected in the substrate under scanning device auxiliary, vacuum tightness when vacuum section provides the system works better, cooling system is used for the cooling of total system.Along with the continuous increase and constantly the dwindling of cmos device characteristic dimension of sizes of substrate in the semiconductor technology makes IBII be faced with formidable challenges, because like charges repels the divergence of ion beam that causes mutually, scan-type is infused in the cost rising that sizes of substrate brings when big etc. when injecting as the low energy shallow junction.(Plasma Immersion Ion Implantation, PIII) technology is considered to substitute the new doping techniques that IBII makes super shallow junction in the plasma immersion ion injection.
PIII directly is immersed in substrate in the plasma body, when chip bench adds the negative pulse bias voltage, at the electron plasma frequency inverse
Time scale in, the electronics in the substrate surface annex plasma body is ostracised, the bigger ion of remaining inertia forms ion parent sheath layer.Subsequently, in ion plasma frequency
Time in ion be accelerated and be injected in the substrate, this causes the border between plasma body and the sheath layer to advance to the plasma body zone, the new ion that exposes is extracted out again, promptly the sheath layer moves along with ionic and expands.In the longer time yardstick, the sheath layer is stable at the Child-Langmuir equation sheath layer (Child-Langmuir equation is satisfied in the motion of plasma body intermediate ion) of stable state.
PIII compares with IBII and has many good qualities: at first PIII does not have the device such as The ion extraction, focusing, scanning of IBII, and equipment is simple, and cost is low; Secondly PIII is that non-scanning type mixes, and can realize that big area injects the injection efficiency height simultaneously; IBII is the line-of-sight process once more, and PIII is the outline-of-sight process, can realize the doping of 3 D complex structure workpiece; Also have PIII dopant ion energy distribution very wide, inject the restriction of energy gear shaper without theoretical, can realize that high dosage, low energy ion mix.
Have some shortcomings during PIII: (1) PIII does not have the mass separation device yet, all ions in the chamber all quicken to be injected in the substrate under the effect of bias voltage, elements such as the iron that chamber inner wall is sputtered out when comprising the immersion ion injection, aluminium, thus the very big Devices Characteristics that influence of meeting caused the injection pollution after it injected substrate; (2) during PIII, the plasma body self that the induction coupling produces not is even completely, the fringing effect of chip bench has aggravated the heterogeneity injected when ion implantation, and it is higher that the implantation dosage at substrate center place is promptly injected in the fringing effect of chip bench, and the implantation dosage of edge is lower.The heterogeneity problem of injecting along with the increase (100mm is to 200mm to 300mm) of sizes of substrate is more obvious.How to realize on large area substrates that the uniform ion injection needs to be resolved hurrily; (3) after repeatedly ion implantation, can on chamber inner wall, form one deck settled layer, as adopt the PH3 geseous discharge to realize to form at chamber inner wall after the P element injects the settling of one deck xanchromatic phosphorus, change when injecting other element and must be earlier the settling of chamber inner wall to be cleaned up, and the cleaning of chamber inner wall has increased the cost of injection when having great difficulty.
The utility model content
One of the purpose of this utility model provide a kind of reduce ion implantation chamber inner wall clean difficulty, when reducing plasma immersion ion and injecting chamber inner wall pollution and improve the inhomogeneity plasma immersion ion injection device that plasma immersion ion injects.
According to an aspect of the present utility model, a kind of plasma immersion ion injection device is provided, comprise ion implantation chamber, supplying unit, injecting electrode part and vacuum section, wall is provided with detachable liner in the described ion implantation chamber; Described liner comprises top liner, two side liner and bottom liner, and described bottom liner is arranged on described ion implantation cavity bottom, and described sidewall liner is arranged on the liner of described bottom, and described top liner can be arranged on the described sidewall liner.
Evenly offer a plurality of circular holes on described top liner and the bottom liner, described Circularhole diameter be 0.5mm to 5mm, circular hole area dutycycle is 5% to 50%.
The wall thickness of inner lining is 0.1mm to 20mm in the described ion implantation chamber.
Described liner is made by silicon single crystal, polysilicon, non-crystalline silicon, silicon-dioxide, graphite, stainless steel or aluminum.
The inner-wall spraying of the described liner of being made by graphite, stainless steel or aluminum has silicon single crystal, polysilicon, non-crystalline silicon or silicon-dioxide.
Described silicon single crystal, polysilicon, non-crystalline silicon or earth silicon material thickness model are that 10 μ m are to 1000 μ m.
The plasma immersion ion injection device that provides by the utility model, the cleaning by detachable liner has replaced the cleaning of repeatedly injecting rear chamber's inwall in the past, make clean simpler.Liner is made up of silicon materials such as silicon single crystal, polysilicon, non-crystalline silicon, silicon-dioxide, or the graphite, stainless steel, the aluminum that are sprayed materials such as silicon single crystal, polysilicon, non-crystalline silicon, silicon-dioxide by inside are formed, the feasible environment that directly contacts with discharge back generation plasma body is the silicon materials environment, the contaminating impurity when this has just reduced PIII dramatically.In addition, because top liner and bottom liner all evenly have the circular hole of diameter 0.5mm to 5mm, this makes that the plasma body of discharge generation is more even, and then improves ion implantation uniformity.
Description of drawings
Fig. 1 is the structural representation of traditional IC P PIII system.
Fig. 2 for the utility model embodiment provide the structural representation of ICP PIII system;
The synoptic diagram of the top liner that Fig. 3 provides for the utility model embodiment.
The synoptic diagram of the sidewall liner that Fig. 4 provides for the utility model embodiment.
The synoptic diagram of the bottom liner that Fig. 5 provides for the utility model embodiment.
The utility model purpose, function and advantage will be in conjunction with the embodiments, are described further with reference to accompanying drawing.
Embodiment
As shown in Figure 1, traditional IC P PIII system comprises four most of compositions such as vacuum section, supplying unit, injecting electrode part and cooling system.Wherein, vacuum section is made up of nozzle of air supply 111, air outlet 112, ion implantation chamber 114 and the sundstrand pump (comprising mechanical pump and molecular pump) that is connected with air outlet 112.Supplying unit comprises that being used for geseous discharge produces the radio-frequency power supply of plasma body and be used for ion implantation direct current pulse power source 125.Wherein, radio-frequency power supply is made up of radio frequency generation source 122 and radio frequency L type matching box 123 again.Traditional IC P PIII work the time will be waited to inject print 181 earlier and be put on the chip bench 171 of ion implantation chamber 114, after utilize vacuum section, make ICP PIII system vacuum degree reach the required vacuum of injection experiments rapidly (as 1 * 10
-4Pa or 1 * 10
-5Pa), then feed experimental gas (as PH by inlet mouth 111
3, B
2H
6, AsH
3Deng).Under the effect of radio-frequency power supply, experimental gas produces plasma body with the discharge mode of ICP.Ion in the plasma body quickens to be injected in the substrate 181 down in the effect of pulsed bias that injecting electrode adds (being produced by direct current pulse power source 125), thus the injection of realization ion doping, and the gas after the injection is taken away by air outlet 112 pump that is combined.The effect of radio frequency adaptation 123 be make add radio frequency power and be added to forward power maximum in the plasma body, reflective power minimum (being preferably zero); Cooling when cooling system is used for total system work, as the cooling of molecular pump, the cooling of injecting electrode etc.
As shown in Figure 2, embodiment of the invention wall in the ion implantation chamber 114 of traditional IC P PIII system is provided with detachable liner.Liner comprises dismountable top liner 230, two side liner 240 and bottom liner 250.Earlier bottom liner 250 is put into ion implantation chamber 114 bottom center when above-mentioned liner is installed, then sidewall liner 240 is placed on the liner 250 of bottom, top liner 230 is placed on the lateral lining 240.Wherein, need not any coupling device between the liner, only need last the getting final product of leaning on of nature.When dismantling, whole liner gets final product according to the inverted order dismounting of installing.The cleaning of detachable liner has replaced repeatedly injecting the cleaning of rear chamber's inwall, makes that cleaning is simpler, and cost is lower.
Evenly offer a plurality of circular holes (referring to Fig. 3 and Fig. 5) on top liner 230 and the bottom liner 250.Wherein, the Circularhole diameter in liner hole, top 231 and liner hole, bottom 251 is that 0.5mm is to 5mm, the area duty cycle range ratio of the disk total area (the circular hole total area with) is 5% to 50%, thereby makes that the plasma body of discharge generation is more even, and then improves ion implantation uniformity.The disk interstitial hole is that disk is by cut-out 252.
The foregoing description is the utility model preferred implementation; but embodiment of the present utility model is not restricted to the described embodiments; other any do not deviate from change, the modification done under spirit of the present utility model and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within the protection domain of the present utility model.
Claims (6)
1. a plasma immersion ion injection device comprises ion implantation chamber, supplying unit, injecting electrode part and vacuum section, it is characterized in that:
Wall is provided with detachable liner in the described ion implantation chamber; Described liner comprises top liner, two side liner and bottom liner, and described bottom liner is arranged on described ion implantation cavity bottom, and described sidewall liner is arranged on the liner of described bottom, and described top liner can be arranged on the described sidewall liner.
2. plasma immersion ion injection device according to claim 1 is characterized in that:
Evenly offer a plurality of circular holes on described top liner and the bottom liner, described Circularhole diameter be 0.5mm to 5mm, circular hole area dutycycle is 5% to 50%.
3. plasma immersion ion injection device according to claim 1 is characterized in that:
The wall thickness of inner lining is 0.1mm to 20mm in the described ion implantation chamber.
4. according to each described plasma immersion ion injection device of claim 1 to 3, it is characterized in that:
Described liner is made by silicon single crystal, polysilicon, non-crystalline silicon, silicon-dioxide, graphite, stainless steel or aluminum.
5. plasma immersion ion injection device according to claim 4 is characterized in that:
The inner-wall spraying of the described liner of being made by graphite, stainless steel or aluminum has silicon single crystal, polysilicon, non-crystalline silicon or silicon-dioxide.
6. plasma immersion ion injection device according to claim 5 is characterized in that:
Described silicon single crystal, polysilicon, non-crystalline silicon or earth silicon material thickness model are that 10 μ m are to 1000 μ m.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202380002U CN201785482U (en) | 2010-06-25 | 2010-06-25 | Plasma immersion ion implantation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010202380002U CN201785482U (en) | 2010-06-25 | 2010-06-25 | Plasma immersion ion implantation device |
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| Publication Number | Publication Date |
|---|---|
| CN201785482U true CN201785482U (en) | 2011-04-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010202380002U Expired - Lifetime CN201785482U (en) | 2010-06-25 | 2010-06-25 | Plasma immersion ion implantation device |
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|---|---|
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165376A (en) * | 2011-12-12 | 2013-06-19 | 中国科学院微电子研究所 | Plasma immersion injection structure |
| CN103695839A (en) * | 2013-12-07 | 2014-04-02 | 深圳市金凯新瑞光电有限公司 | Ion source cleaning device applied to coating equipment |
| CN107523798A (en) * | 2017-09-21 | 2017-12-29 | 北京大学 | A kind of plasma immersion and ion implantation doper and its application |
| CN107706079A (en) * | 2017-09-22 | 2018-02-16 | 深圳市创新维度科技有限公司 | A kind of plasma injecting chamber inner lining structure |
-
2010
- 2010-06-25 CN CN2010202380002U patent/CN201785482U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103165376A (en) * | 2011-12-12 | 2013-06-19 | 中国科学院微电子研究所 | Plasma immersion injection structure |
| CN103165376B (en) * | 2011-12-12 | 2016-09-14 | 中国科学院微电子研究所 | A kind of plasma immersion implantation device |
| CN103695839A (en) * | 2013-12-07 | 2014-04-02 | 深圳市金凯新瑞光电有限公司 | Ion source cleaning device applied to coating equipment |
| CN107523798A (en) * | 2017-09-21 | 2017-12-29 | 北京大学 | A kind of plasma immersion and ion implantation doper and its application |
| CN107523798B (en) * | 2017-09-21 | 2018-07-13 | 北京大学 | A kind of plasma immersion and ion implantation doper and its application |
| CN107706079A (en) * | 2017-09-22 | 2018-02-16 | 深圳市创新维度科技有限公司 | A kind of plasma injecting chamber inner lining structure |
| CN107706079B (en) * | 2017-09-22 | 2019-05-14 | 深圳市中科摩方科技有限公司 | A kind of plasma injecting chamber inner lining structure |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110406 |