CN102312282B - Two-stage feeding device for polysilicon ingot casting - Google Patents
Two-stage feeding device for polysilicon ingot casting Download PDFInfo
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- CN102312282B CN102312282B CN201110285445.5A CN201110285445A CN102312282B CN 102312282 B CN102312282 B CN 102312282B CN 201110285445 A CN201110285445 A CN 201110285445A CN 102312282 B CN102312282 B CN 102312282B
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- filling tube
- barrel
- tube
- assembly
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- 238000005266 casting Methods 0.000 title claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 18
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 15
- 239000010453 quartz Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 230000007306 turnover Effects 0.000 claims description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- 239000004809 Teflon Substances 0.000 claims description 2
- 229920006362 Teflon® Polymers 0.000 claims description 2
- 239000007770 graphite material Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000002210 silicon-based material Substances 0.000 description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 239000000155 melt Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000003245 working effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
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Abstract
The invention relates to a two-stage feeding device for polysilicon ingot casting. The two-stage feeding device comprises a material barrel assembly, a gas inlet/outlet assembly, a feeding pipe movement assembly and a feeding pipe assembly. The gas inlet/outlet assembly comprises a furnace chamber gas inlet/outlet (12) communicated with a furnace chamber of an ingot casting furnace, a material barrel gas inlet/outlet (14) communicated with a material barrel (2), and a gas inlet pipe (13) for connection of the furnace chamber gas inlet/outlet (12) and the material barrel gas inlet/outlet (14). The feeding pipe movement assembly comprises an upper bellows (5), a lower bellows (7), a flange for connection of the upper bellows (5) and the lower bellows (7), a guide rod (8) fixed on an ingot casting furnace platform, and a guide sleeve (6) fixed on the flange for connection of the upper bellows (5) and the lower bellows (7). The feeding pipe assembly comprises an upper feeding pipe (4), a lower feeding pipe (9) and a stop valve (3) arranged between the material barrel (2) and the upper feeding pipe (4). The two-stage feeding device can improve a utilization rate of a polysilicon ingot quartz crucible, and a production capacity of a single ingot casting furnace, guarantee a feeding pipe service life, and reduce a cost of ingot casting.
Description
Technical field
The present invention relates to a kind of two-stage feeding device for polysilicon ingot casting.Belong to the polycrystalline silicon ingot casting field in photovoltaic industry production process.
The mode that at present polycrystalline silicon ingot casting adopts is, packs silicon material in quartz crucible into, high temperature melting in ingot furnace, and then from bottom coohng, directional freeze forms ingot casting.Owing to packing the silicon material of crucible into, be bulk silicon material not of uniform size, have certain space between material, after silicon material melts, crucible top has certain surplus.If again add a certain amount of silicon material in crucible after silicon material melts, can improve the utilization ratio of ingot casting quartz crucible, improve the production capacity of separate unit ingot furnace, reduce ingot casting production cost.
Chinese patent (CN201624086) provides a kind of secondary charging device for polycrystalline furnace, and this device can again add a certain amount of silicon material after silicon material melts, and reaches the object of secondary charging.But this installs filling tube used will remain on original position all the time, half in thermal field half outside thermal field, the easy corrosion of rupturing and being subject to silicon steam in thermal field of the uneven filling tube that is heated, work-ing life is very short, and uses the filling tube of corrosion-and high-temp-resistant material, and price is very expensive again.
Summary of the invention
The object of the invention is to overcome above-mentioned deficiency, a kind of utilization ratio that can improve polycrystalline silicon ingot casting quartz crucible is provided, improve the production capacity of separate unit ingot furnace, can extend again the work-ing life of filling tube, reduce the two-stage feeding device for polysilicon ingot casting of ingot casting cost.
The object of the present invention is achieved like this: a kind of two-stage feeding device for polysilicon ingot casting, comprises that barrel assembly, turnover gas assembly, filling tube move assembly and filling tube assembly;
Described barrel assembly comprises: barrel and lid barrel upper cover thereon;
Described turnover gas assembly comprises: the furnace chamber air inlet/outlet communicating with ingot furnace furnace chamber, the barrel air inlet/outlet communicating with barrel and be connected furnace chamber air inlet/outlet and the inlet pipe of barrel air inlet/outlet;
Described filling tube moves assembly and comprises: upper corrugated tube, lower corrugated tube, connect upper and lower corrugated tube flange, be fixed on guide rod and the guide pin bushing being fixed on the flange that is connected upper and lower corrugated tube on ingot furnace table;
Described filling tube assembly comprises: be divided into upper and lower two joint upper filling tube and lower filling tubes and be arranged on barrel and upper filling tube between stopping valve;
Described barrel is positioned at the topmost of whole device;
The upper corrugated tube upper end that described filling tube moves assembly is fixedly connected with stopping valve by upper flange, and the lower end of lower corrugated tube is connected with the flange on ingot furnace bell;
The upper filling tube of described filling tube assembly and lower filling tube lay respectively in corrugated tube and lower corrugated tube, and the upper end of upper filling tube is fixed on the upper flange of corrugated tube, and the upper end of lower filling tube is fixed on the upper flange of lower corrugated tube.Insert in lower filling tube upper filling tube lower end, and lower filling tube lower end is through muff on ingot furnace thermal field.
The invention has the beneficial effects as follows:
1, use the present invention to realize the repeatedly reinforced of ingot casting process, after silicon material melts completely in crucible, again in crucible, add a certain amount of silicon material, fill up vacant space, crucible top, improved the utilization ratio of crucible, improved the production capacity of separate unit table.
2, silicon ingot height increases, and silicon ingot is subject to relative the reducing of impact of impurity back diffusion and crucible bottom diffusion of contaminants, thereby the good article rate of silicon ingot also can be improved.
3, filling tube can stretch into thermal field when reinforced, and non-feed time remains on thermal field outside, and the time of filling tube in thermal field shortens greatly, and be greatly improved the work-ing life of filling tube.
Accompanying drawing explanation
Fig. 1 is the non-reinforced status architecture schematic diagram of two-stage feeding device for polysilicon ingot casting of the present invention.
Fig. 2 is the reinforced status architecture schematic diagram of two-stage feeding device for polysilicon ingot casting of the present invention.
Reference numeral in figure:
Barrel upper cover 1, barrel 2, stopping valve 3, upper filling tube 4, upper corrugated tube 5, guide pin bushing 6, lower corrugated tube 7, guide rod 8, lower filling tube 9, muff 10, ingot furnace bell 11, furnace chamber air inlet/outlet 12, inlet pipe 13, barrel air inlet/outlet 14.
Embodiment
Referring to Fig. 1 ~ 2, Fig. 1 is the non-reinforced status architecture schematic diagram of two-stage feeding device for polysilicon ingot casting of the present invention.Fig. 2 is the reinforced status architecture schematic diagram of two-stage feeding device for polysilicon ingot casting of the present invention.By Fig. 1 and Fig. 2, can be found out, two-stage feeding device for polysilicon ingot casting of the present invention, by barrel assembly, turnover gas assembly, filling tube moves assembly and filling tube assembly forms.
Described barrel assembly comprises: the barrel 2 of charge and lid barrel upper cover 1 thereon.
Described turnover gas assembly comprises: the furnace chamber air inlet/outlet 12 communicating with ingot furnace furnace chamber, the barrel air inlet/outlet 14 communicating with barrel and inlet pipe 13.
Described filling tube moves assembly and comprises: upper corrugated tube 5, lower corrugated tube 7, connect upper and lower corrugated tube flange, be fixed on guide rod 8 and the guide pin bushing 6 being fixed on the flange that is connected upper and lower corrugated tube on ingot furnace table.
Described filling tube assembly comprises: be divided into upper and lower two upper filling tube 4 and the lower filling tubes 9 that save, be arranged on the stopping valve 3 between barrel 2 and upper filling tube 4.
Described barrel 2 is positioned at the topmost of whole device.Barrel 2 is stainless steel, and inwall is evenly coated with Teflon and processes.The barrel air inlet/outlet 14 communicating with barrel is located on barrel upper cover 1.
Between the furnace chamber air inlet/outlet 12 of described turnover gas assembly and barrel air inlet/outlet 14, by inlet pipe 13, be communicated with, keep in barrel and furnace chamber internal gas pressure equates.
Upper corrugated tube 5 upper ends that described filling tube moves assembly are fixedly connected with stopping valve 3 by upper flange, and the lower end of lower corrugated tube 7 is connected with the flange on ingot furnace bell 11.On ingot furnace table, fix a horizontal base, guide rod 8 is fixed on pedestal and perpendicular to pedestal.Guide pin bushing is fixed on the flange of upper and lower corrugated tube connection.Lower filling tube lower end lower limit is at silicon liquid level between muff bottom surface on ingot furnace thermal field, and upper limit is higher than muff end face on ingot furnace thermal field.When lower filling tube is positioned at lower limit, the low side of upper filling tube is still in lower filling tube.
The upper filling tube 4 of described filling tube assembly and lower filling tube 9 lay respectively in corrugated tube 5 and lower corrugated tube 7, and the upper end of upper filling tube 4 is fixed on the upper flange of corrugated tube 5, and the upper end of lower filling tube 9 is fixed on the upper flange of lower corrugated tube 7.Lower filling tube 9 lower ends are through muff 10 on ingot furnace thermal field.Reinforced filling tube at present puts in thermal field, as shown in Figure 2, after having fed in raw material, lower filling tube is proposed to thermal field, as shown in Figure 1.In order to prevent that silicon material from leaking and facilitating lower filling tube to move up and down, upper filling tube 4 external diameters are less than the internal diameter of lower filling tube 9, and insert in lower filling tube 9 upper filling tube 4 lower ends.Upper filling tube 4 is stainless steel, and lower filling tube 9 is quartz or graphite material.
Below in conjunction with preferred concrete embodiment, the present invention will be further described:
Use the present invention to carry out ingot casting, in crucible, a charging capacity is 280Kg, adds silicon material 150Kg in barrel.According to normal casting ingot process, heat material, after waiting the interior silicon material of crucible to melt completely, filling tube is moved, open stopping valve, feed in raw material, continue to feed in raw material after 10 minutes, close stopping valve.Silicon material feeds in raw material again according to above-mentioned steps after melting completely, so repeats, until the silicon material in barrel adds completely.After silicon material melts completely, enter long brilliant program, complete long brilliant process.Go out after ingot, silicon ingot is intact, silicon ingot the indistinction of silicon ingot check quality and normal ingot casting.
Detected result is as follows:
The same table secondary charging of table 1. silicon ingot and normal silicon ingot detect data
| Silicon ingot | Silicon ingot weight (kg) | Type (P/N) | Top resistivity (Ω cm) | End resistivity (Ω cm) | Average minority carrier lifetime (μ s) |
| Normal silicon ingot | 282.3 | P | 1.5 | 2.2 | 4.13 |
| Normal silicon ingot | 282.3 | P | 1.2 | 2.0 | 4.45 |
| Normal silicon ingot | 282.1 | P | 1.4 | 2.1 | 3.84 |
| Secondary charging ingot | 431.5 | P | 1.3 | 2.1 | 4.68 |
| Secondary charging ingot | 432.1 | P | 1.4 | 2.3 | 4.43 |
| Secondary charging ingot | 431.8 | P | 1.3 | 2.1 | 3.96 |
Table 2. separate unit polycrystalline furnace cost and benefit is adjusted as following table:
From comparing result, use the ingot furnace of this invention, separate unit monthly production capacity improves more than 20%, crucible cost savings 20%.
Claims (3)
1. a two-stage feeding device for polysilicon ingot casting, is characterized in that: described device comprises that barrel assembly, turnover gas assembly, filling tube move assembly and filling tube assembly;
Described barrel assembly comprises: barrel (2) and lid barrel upper cover (1) thereon;
Described turnover gas assembly comprises: the furnace chamber air inlet/outlet (12) communicating with ingot furnace furnace chamber, the barrel air inlet/outlet (14) communicating with barrel and be connected furnace chamber air inlet/outlet (12) and the inlet pipe (13) of barrel air inlet/outlet (14);
Described filling tube moves assembly and comprises: upper corrugated tube (5), lower corrugated tube (7), connect upper and lower corrugated tube flange, be fixed on guide rod (8) and the guide pin bushing (6) being fixed on the flange that is connected upper and lower corrugated tube on ingot furnace table;
Described filling tube assembly comprises: be divided into upper and lower two joint upper filling tube (4) and lower filling tubes (9) and be arranged on barrel (2) and upper filling tube (4) between stopping valve (3);
Described barrel (2) is positioned at the topmost of whole device;
Upper corrugated tube (5) upper end that described filling tube moves assembly is fixedly connected with stopping valve (3) by upper flange, and the lower end of lower corrugated tube (7) is connected with the flange on ingot furnace bell (11);
The upper filling tube (4) of described filling tube assembly and lower filling tube (9) lay respectively in corrugated tube (5) and lower corrugated tube (7), the upper end of upper filling tube (4) is fixed on the upper flange of corrugated tube (5), the upper end of lower filling tube (9) is fixed on the upper flange of lower corrugated tube (7), lower filling tube (9) lower end is through muff (10) on ingot furnace thermal field, and insert in lower filling tube (9) upper filling tube (4) lower end.
2. a kind of two-stage feeding device for polysilicon ingot casting according to claim 1, is characterized in that: described upper filling tube (4) is stainless steel, and lower filling tube (9) is quartz or graphite material.
3. a kind of two-stage feeding device for polysilicon ingot casting according to claim 1, it is characterized in that: described barrel (2) is stainless steel, barrel (2) inwall applies Teflon, and the barrel air inlet/outlet (14) communicating with barrel is located on barrel upper cover (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110285445.5A CN102312282B (en) | 2011-09-23 | 2011-09-23 | Two-stage feeding device for polysilicon ingot casting |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110285445.5A CN102312282B (en) | 2011-09-23 | 2011-09-23 | Two-stage feeding device for polysilicon ingot casting |
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| Publication Number | Publication Date |
|---|---|
| CN102312282A CN102312282A (en) | 2012-01-11 |
| CN102312282B true CN102312282B (en) | 2014-02-26 |
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| CN201110285445.5A Expired - Fee Related CN102312282B (en) | 2011-09-23 | 2011-09-23 | Two-stage feeding device for polysilicon ingot casting |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560654B (en) * | 2012-02-27 | 2015-07-08 | 浙江昀丰新能源科技有限公司 | Extracting device for floating impurity |
| CN104805499A (en) * | 2015-05-18 | 2015-07-29 | 王进 | N type polycrystalline ingot casting equipment and process for preparing N type polycrystalline ingot |
| CN110886015A (en) * | 2019-11-25 | 2020-03-17 | 大同新成新材料股份有限公司 | Thermal field crucible adjusting type heat preservation equipment for polycrystalline silicon |
| CN115125610A (en) * | 2022-08-01 | 2022-09-30 | 西安奕斯伟材料科技有限公司 | Feeding device for single crystal furnace |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5419462A (en) * | 1992-09-09 | 1995-05-30 | Albemarle Corporation | Apparatus for recharging a heated receptacle with particulate matter at a controlled velocity |
| CN201224781Y (en) * | 2008-06-24 | 2009-04-22 | 江西赛维Ldk太阳能高科技有限公司 | Directional Solidification Polysilicon Casting Furnace with Supplementary Feeding Device |
| CN202482489U (en) * | 2011-09-23 | 2012-10-10 | 海润光伏科技股份有限公司 | Secondary feeding device for polycrystalline silicon cast ingots |
-
2011
- 2011-09-23 CN CN201110285445.5A patent/CN102312282B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5419462A (en) * | 1992-09-09 | 1995-05-30 | Albemarle Corporation | Apparatus for recharging a heated receptacle with particulate matter at a controlled velocity |
| CN201224781Y (en) * | 2008-06-24 | 2009-04-22 | 江西赛维Ldk太阳能高科技有限公司 | Directional Solidification Polysilicon Casting Furnace with Supplementary Feeding Device |
| CN202482489U (en) * | 2011-09-23 | 2012-10-10 | 海润光伏科技股份有限公司 | Secondary feeding device for polycrystalline silicon cast ingots |
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| CN102312282A (en) | 2012-01-11 |
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Address after: 214407 Huang Tang Industrial Park, Xu Xiake Town, Jiangsu, Jiangyin Applicant after: Hareon Solar Technology Co., Ltd. Address before: Shen Zhen 214443 Jiangsu city in Jiangyin province Shen Wei Road Applicant before: Jiangsu Shenlong Hi-tech Group Co., Ltd. |
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