CN115125610A - Feeding device for single crystal furnace - Google Patents
Feeding device for single crystal furnace Download PDFInfo
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- CN115125610A CN115125610A CN202210915133.6A CN202210915133A CN115125610A CN 115125610 A CN115125610 A CN 115125610A CN 202210915133 A CN202210915133 A CN 202210915133A CN 115125610 A CN115125610 A CN 115125610A
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- crystal furnace
- charging device
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- 239000013078 crystal Substances 0.000 title claims abstract description 54
- 239000000463 material Substances 0.000 claims abstract description 54
- 239000012720 thermal barrier coating Substances 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 17
- 229920005591 polysilicon Polymers 0.000 description 9
- 239000002210 silicon-based material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000013386 optimize process Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present disclosure relates to a charging device for a single crystal furnace, comprising: a feed tube comprising a feed end and a discharge end; the material stopper is arranged at the discharge end of the feeding pipe; and a driving device configured to move the material stopper to open and close the orifice of the charging tube at the discharge end, wherein the charging tube includes a first charging tube and a second charging tube, one end of one of the first charging tube and the second charging tube being connectable to one end of the other at different positions thereof in an axial direction of the charging tube, so that the charging tube is retractable. By the telescopic structure, the charging tube has universality for different charging amounts and different thermal field structures.
Description
Technical Field
The disclosure relates to the technical field of semiconductor wafers, in particular to a feeding device for a single crystal furnace.
Background
With the continuous improvement of the quality of the wafer, the crystal defect of the crystal bar in the crystal pulling process has higher control requirements. One of the main factors influencing the crystal defects is crystal pulling process parameters, and crystal rods with better quality can be prepared by using the optimized process parameters for crystal pulling. The crystal pulling process usually comprises the processes of melting materials, secondary feeding, temperature stabilization, dipping, reducing diameter, shouldering, shoulder rotating, constant diameter, ending and the like. In the case of the secondary charging process, the polycrystalline silicon material charged into the crucible is required to be filled with the silicon solution by means of re-charging because the volume of the polycrystalline silicon material becomes smaller after melting due to the inverse expansion characteristic, i.e., the volume of the solid is larger than that of the liquid.
However, since the charging amount of different single crystal furnaces is different, and the thermal field structure of each single crystal furnace is different due to different requirements on the quality of the crystal bar and different requirements on the oxygen content, the charging is carried out by using charging pipes with different lengths. At present, aiming at the problems, each furnace is provided with a customized charging pipe, and the charging pipes cannot be used universally, so that the cost is wasted.
Furthermore, the lower part of the feed tube is subjected to thermal radiation from the molten silicon solution in the crucible, whereby thermal stresses are generated in the lower part of the feed tube, which greatly limit the service life of the feed tube.
Disclosure of Invention
This section provides a general summary of the disclosure, and is not a comprehensive disclosure of its full scope or all of its features.
An object of the present disclosure is to provide a charging device for a single crystal furnace having versatility that can be adapted to different charge amounts and different thermal field structures.
Another object of the present disclosure is to provide a charging device for a single crystal furnace that can have a relatively long service life.
To achieve one or more of the above objects, there is provided a charging device for a single crystal furnace, including:
a feed tube comprising a feed end and a discharge end;
the material stopper is arranged at the discharge end of the feeding pipe; and
a drive configured for moving the material stop to open and close a nozzle of the loading tube at the discharge end,
wherein, the filling tube includes first filling tube and second filling tube, and the one end of one in first filling tube and second filling tube can be connected with the one end of another at its different positions on the axial direction of filling tube to make the filling tube be the telescopic.
In the above charging device for a single crystal furnace, one end of the one may be provided on an outer surface thereof with at least two annular grooves extending around a circumferential direction of the one end and spaced apart from each other in an axial direction, and a chute extending through the at least two annular grooves to communicate the at least two annular grooves and extending to penetrate an end surface of the one end, and the other end may be provided on an inner surface thereof with a snap member, wherein the snap member is movable along the chute into any one of the at least two annular grooves and is snapped therein.
In the above charging device for a single crystal furnace, one end of the one may be provided with two sliding grooves on an outer surface thereof in a radially opposed manner, and one end of the other may be provided with two engaging pieces on an inner surface thereof in a radially opposed manner.
In the above charging device for a single crystal furnace, the other is a second charging pipe, the second charging pipe may include an upper end straight tube portion and a lower end involute portion, and the seizing piece is provided on an inner surface of the upper end straight tube portion.
In the above charging device for a single crystal furnace, the material stopper can be received in the lower involute portion of the second charging tube to close the mouth of the charging tube.
In the above charging device for a single crystal furnace, the upper surface of the material stopper, which is in contact with the material, may be in a convex shape.
In the above-described charging device for a single crystal furnace, the steepness of the shape of the projection can be configured differently according to different charge amounts and different thermal field configurations of the single crystal furnace.
In the above charging device for single crystal furnace, the surfaces of the material stopper and the second charging pipe may be coated with a nano thermal insulating coating.
In the above charging device for a single crystal furnace, the first charging pipe may be provided at the other end thereof with an engaging structure for engaging the charging pipe on the single crystal furnace so as not to move downward any more.
In the above-described charging device for a single crystal furnace, the driving device may be a charging rod extending in the charging tube through the charging end and connected to the material stopper at one end thereof.
According to the present disclosure, the charging tube is made telescopic by configuring the charging tube to include a first charging tube and a second charging tube, and enabling one end of one of the two to be connected to one end of the other at different positions thereof in the axial direction, thereby making the charging tube versatile for different charging amounts and different thermal field configurations. In addition, the nano heat insulating coating is coated on the surfaces of the material blocking part and the second feeding pipe to block the heat radiation from the molten silicon solution so as to avoid the feeding pipe from being influenced by thermal stress, thereby obtaining relatively long service life.
The above features and advantages and other features and advantages of the present disclosure will become more apparent from the following detailed description of exemplary embodiments thereof, which is to be read in connection with the accompanying drawings.
Drawings
The above and other objects, features and advantages of the present disclosure will be more readily understood by reference to the following detailed description of exemplary embodiments thereof taken in conjunction with the accompanying drawings. Throughout the drawings, identical or corresponding technical features or components will be denoted by identical or corresponding reference numerals. In the drawings:
FIG. 1 is a side cross-sectional view schematically illustrating a charging device for a single crystal furnace according to an embodiment of the present disclosure;
FIG. 2 is a side perspective view schematically illustrating a first fill tube, according to an embodiment of the present disclosure;
FIG. 3 is a top perspective view schematically illustrating a second fill tube, according to an embodiment of the present disclosure; and
fig. 4-6 are side perspective views each schematically illustrating a material stop having an upper surface with a different steepness.
Detailed Description
The disclosure is described in detail below with the aid of exemplary embodiments with reference to the accompanying drawings. It is to be noted that the following detailed description of the present disclosure is intended for purposes of illustration only and is not intended to limit the present disclosure in any way.
According to an embodiment of the present disclosure, as shown in fig. 1, there is provided a charging device 1 for a single crystal furnace, the charging device 1 including:
a feed tube 11 comprising a feed end 11a and a discharge end 11 b;
a material stopper 12 provided at the discharge end 11b of the feed pipe 11; and
a drive device 13 configured for moving the material stopper 12 to open and close the mouth of the filling tube 11 at the discharge end 11 b.
The feed tube 11 may, for example, be generally cylindrical in shape, or may be other shapes that pass up and down to allow the polysilicon material to pass through. In the secondary charging of the single crystal furnace, the charging tube 11 is extended into the furnace from the furnace mouth of the single crystal furnace, and the polysilicon material, which is usually lump material, can be fed into the charging tube 11 from the nozzle at the charging end 11a and exited from the charging tube 11 via the nozzle at the discharging end 11b to fall into the crucible in the single crystal furnace, thereby achieving the secondary charging of the single crystal furnace.
The material stop 12 can be moved by a drive device 13 to assist in the loading. Specifically, when the polysilicon material is to be fed into the feeding tube 11, the driving device 13 drives the material stopper 12 to move upward to close the nozzle at the discharging end 11b, so that when the polysilicon material is fed, the polysilicon material is blocked by the material stopper 12 and is accumulated and contained in the feeding tube 11; when a polycrystalline silicon material is to be charged into the crucible, the driving device 13 drives the material stopper 12 to move downward to open the nozzle at the discharge end 11b, so that the polycrystalline silicon material contained in the charging pipe 11 can exit from the nozzle at the discharge end 11b to fall into the crucible.
In the embodiment of the present disclosure, the feed tube 11 includes the first feed tube 111 and the second feed tube 112, and one end of one of the first feed tube 111 and the second feed tube 112 can be connected to one end of the other at different positions thereof in the axial direction of the feed tube 11, so that the feed tube 11 is retractable.
Specifically, the first filling pipe 111 has a first end portion, which is the feeding end 11a of the filling pipe 11, and a second end portion, which is an end portion connected to the second filling pipe 112. Similarly, the second filling pipe 112 also has a first end portion and a second end portion, wherein the first end portion is the end portion connected to the second end portion of the first filling pipe 111, and the second end portion is the discharge end 11b of the filling pipe 11.
In one embodiment, the second end of the first filling tube 111 can be connected to the first end of the second filling tube 112 at different positions in its axial direction. In this case, for these different positions in the axial direction, when the position where the first feeding tube 111 and the second feeding tube 112 are connected is relatively closer to the first end portion of the first feeding tube 111, i.e., the feeding end 11a, the total length of the feeding tube 11 formed by the connection is relatively shorter; and when the joining is located relatively closer to the second end portion of the first filling tube 111, the total length of the filling tube 11 formed by the joining is relatively longer.
It is contemplated that in another embodiment, the first end of the second filling tube 112 may be connected to the second end of the first filling tube 111 at different positions in the axial direction thereof. In this case, for these different positions in the axial direction, when the position where the first filling tube 111 is connected to the second filling tube 112 is relatively closer to the second end portion of the second filling tube 112, that is, the discharge end 11b, the total length of the filling tube 11 formed by the connection is relatively shorter; whereas the total length of the filling tube 11 formed by the connection is relatively long when the connection is located relatively closer to the first end of the second filling tube 111.
Thus, the length of the filling tube 11 can be changed by setting the connection position of the first filling tube 111 and the second filling tube 112, so that the filling tube 11 is telescopic.
With this configuration, it is possible to obtain the desired length of the feed tube 11 by adjusting the connection position of the first feed tube 111 and the second feed tube 112 according to the required charge amount of the single crystal furnace and the required thermal field configuration of the single crystal furnace. In this way, the charging tube 11 according to embodiments of the present disclosure has versatility for different charge amounts and different thermal field configurations, thereby avoiding cost waste that may result.
With respect to the connection structure of the first filling tube 111 and the second filling tube 112, fig. 2 and 3 illustrate an exemplary embodiment according to the present disclosure.
Specifically, the second end portion of the first filling pipe 111 for connection with the second filling pipe 112 is provided on the outer surface thereof with three annular grooves 111a and two slide grooves 111b, wherein the annular grooves 111a extend around the circumferential direction of the second end portion and are spaced apart from each other in the axial direction, the slide grooves 111b extend through the three annular grooves 111a to communicate the three annular grooves 111a and extend to penetrate the end surface of the second end portion, and the first end portion of the second filling pipe 112 for connection with the first filling pipe 111 is provided on the inner surface thereof with two snap members 112a, wherein the snap members 112a are movable along the slide grooves 111b into any one of the three annular grooves 111a and snap therein.
The three annular grooves 111a of the first filling tube 111 define three different positions in the axial direction at the second end, and the length of the filling tube 11 can be adjusted by adjusting the specific position of the snap-in member 112a of the second filling tube 112 at the second end of the first filling tube 111, i.e. by selecting one of the three different positions of the snap-in member.
Specifically, when the first feeding tube 111 is connected to the second feeding tube 112, the engaging member 112a of the second feeding tube 112 may first enter the sliding groove 111b of the first feeding tube 111. When it is desired to connect the second feed tube 112 to the first feed tube 111, for example, at the annular groove farthest from the second end of the first feed tube 111 among the three annular grooves 111a, the engaging member 112a can be moved upward along the chute 111b by moving the second feed tube 112 upward to reach the intersection of the chute 111b and the annular groove, and then the engaging member 112a can be moved into and engaged in the annular groove by rotating the second feed tube 112 about the central axis of the feed tube 11.
On the other hand, when it is necessary to adjust, for example, the length of the feed tube 11 according to a specific charge amount and thermal field configuration, it is possible to move the engaging member 112a to the intersection of the slide groove 111b and the annular groove by rotating the second feed tube 112, and then move the engaging member 112a to the intersection of the slide groove 111b and the desired annular groove along the slide groove 111b by moving the second feed tube 112 downward to disengage the engaging member 112a from the annular groove, and repeat the engaging process of the engaging member 112a in the desired annular groove.
On the other hand, when it is necessary to separate the second filling tube 112 from the first filling tube 111, the second filling tube 112 may be detached from the first filling tube 111 by rotating the second filling tube 112 to move the engaging member 112a to the intersection of the chute 111b and the previously engaged annular groove, and then by moving the second filling tube 112 downward to disengage the engaging member 112a from the annular groove into the chute 111b and continuing to move along the chute 111b to the end surface of the second end portion of the first filling tube 111 to disengage from the chute 111 b.
It is envisaged that the number of annular grooves 111a may be set according to the number of lengths of filler pipe that are desired to be set, but there are at least two annular grooves to allow adjustment of the length of the filler pipe 11. The intervals between the annular grooves 111a may be set according to the difference in the length of the charging pipes to be set, and may be set to be equal or unequal.
It is also contemplated that the number of chutes 111b and corresponding snaps 112a may be one or more, as long as the connection of the first filling tube 111 and the second filling tube 112 is possible. The number of the slide grooves 111b and the corresponding snap members 112a may preferably be two in view of convenience of operation and stability of connection.
In the present embodiment, the snap-in member 112a is a small protrusion extending radially inward from the inner surface of the second filling tube 112, the small protrusion being dimensioned such that it can be received in the chute 111b and can be received in the annular groove 111a and cannot be disengaged therefrom, i.e. snapped in the annular groove 111a, unless moved to the chute area. In addition, in order to enable the catching piece 112a to catch at the annular groove farthest from the second end portion of the first filling pipe 111, the chute 111b is further extended toward the first end portion side of the first filling pipe 111, as clearly shown in fig. 2.
It is understood that the chute 111b may be extended in a direction parallel to the axial direction in order to achieve smooth coupling of the second filling tube 112 with the first filling tube 111.
In the case of two runners and corresponding two engagement members, it is conceivable that these two runners are arranged diametrically opposite on the outer surface of the second end portion of the first filling pipe 111 and that these two snap-in members are arranged diametrically opposite on the inner surface of the first end portion of the second filling pipe 112. Thereby, the second feeding tube 112 can be smoothly and evenly connected to the first feeding tube 111, so that the inner passage of the feeding tube 11 has a straight path, and the polysilicon material can smoothly pass through the feeding tube 11.
With respect to the coupling structure of the first and second feeding pipes 111 and 112, it is contemplated that the annular groove and the slide groove may be provided on the outer surface of the first end portion of the second feeding pipe 112, and the snap-in fitting may be provided on the inner surface of the second end portion of the first feeding pipe 111.
It is also contemplated that the annular groove and the chute may be provided on the inner surface of the second end portion of the first filling tube 112 and the snap-fit member may be provided on the outer surface of the first end portion of the second filling tube 111; or the annular groove and the slide groove may be provided on the inner surface of the first end portion of the second filling tube 112, and the snap-fit member may be provided on the outer surface of the second end portion of the first filling tube 111.
It is also conceivable to realize other forms of connecting structures in which the first filling tube 111 and the second filling tube 112 can be connected at different positions in the axial direction.
According to an embodiment of the present disclosure, as shown in fig. 1 and 3, the second feeding tube 112 may include an upper end straight tube portion 1121 and a lower end involute portion 1122, and the snap 112a is provided on an inner surface of the upper end straight tube portion 1121.
When the second filling pipe 112 is connected to the first filling pipe 111, the upper end straight portion 1121 is connected to the second end portion of the first filling pipe 111 by engaging a catch member 112a provided thereon with an annular groove 111a provided on the first filling pipe 111.
The lower involute part 1122 is integrated with the upper straight tube part and has an involute form with a flared lower end so that the diameter of the nozzle at the second end of the second filling tube 112 is relatively larger, so that the polysilicon material can smoothly exit from the nozzle during the blanking of the polysilicon material from the filling tube 11, and the blockage of the block is avoided.
According to embodiments of the present disclosure, the material stopper 12 can be received within the lower involute 1122 of the second filling tube 112 to close the mouth of the filling tube 11.
As shown in fig. 1, the material stopper 12 closes the orifice of the charging tube 11 by contacting the inner wall of the lower involute 1122 inside the lower involute 1122 to prevent the silicon material in the charging tube 11 from moving downward. Therefore, the whole occupied space of the feeding pipe is smaller, and the heat damage caused by the exposure of the material stopper 12 in the high-temperature environment in the single crystal furnace is reduced to a certain extent.
As shown in fig. 4-6, the upper surface of the material-stop 12 that contacts the material is convex in shape.
The shape of the material stopper 12 allows silicon material to slide down along the upper surface to the periphery and fall into the crucible when the material stopper 12 moves to open the nozzle, so that the feeding process is smoother, and the polycrystalline silicon material is prevented from being accumulated on the nozzle to cause blockage.
The steepness of the convex shape can be configured differently for different feed rates and different thermal field configurations of the single crystal furnace.
Fig. 4 to 6 show a stopper 12 with a successively decreasing steepness of the upper surface. The steepness of the upper surface of the material stopper 12 is constructed to be smaller as the charged amount increases to lower the discharging speed, thereby preventing a larger amount of solution from splashing due to an excessively fast dropping speed of the polycrystalline silicon ingot during the charging process.
According to an embodiment of the present disclosure, the surfaces of the material stopper 12 and the second feed tube 112 are coated with a nano thermal barrier coating.
In the secondary charging of the single crystal furnace, the lower portion of the charging tube 11, specifically the material stopper 12 and the second charging tube 112, may be subjected to heat radiation from the molten silicon solution in the crucible, and may even contaminate the molten silicon solution splashed by the falling silicon mass, thereby possibly generating large thermal stress in the material stopper 12 and the second charging tube 112, and affecting the service life of the charging tube.
By applying a nano thermal barrier coating to the surfaces of the stopper 12 and the second feed tube 112, thermal radiation from the molten silicon solution in the crucible can be blocked, thereby avoiding excessive thermal stress and thus adverse effects on the feed tube service life.
It is contemplated that the surfaces of the material stop 12 and the second feed tube 112 may also be coated with other types of coatings capable of blocking thermal radiation.
In the embodiment of the present disclosure, the first feeding tube 111 may be provided at the other end thereof, i.e., at the feeding end 11a, with a coupling structure 113 for coupling the feeding tube to the single crystal furnace so as not to move downward any more.
As shown in FIGS. 1 and 2, the coupling structure 113 is in the form of a flange and provided at the outer tube wall at the feed end 11a of the first feeding tube 111 to overlap on the single crystal furnace so that the feeding tube 11 including the first and second feeding tubes is not moved downward any more, ensuring stability in the arrangement of the feeding tube 11. It is contemplated that the engagement structure may take other forms so long as the fill tube is no longer movable downwardly.
In an embodiment of the present disclosure, the drive device 13 may be a feed rod extending through the feed end in the feed tube 11 and connected at one end thereof to the material stop 12.
When the polysilicon material is to be added to the feeding tube 11, the feeding rod 13 can be moved upward so that the material stopper 12 is received in the lower involute 1122 of the second feeding tube 12 to close the mouth of the feeding tube 11; when the polycrystalline silicon material is to be charged into the crucible, the charging rod 13 may be moved downward to separate the material stopper 12 from the second charging pipe 112 to open the nozzle of the charging pipe 11, thereby allowing the polycrystalline silicon material to be uniformly scattered from the upper surface of the material stopper 12 all around into the crucible, thereby achieving charging.
In the disclosed embodiment, the charge rod 13 is threadably attached to the upper surface of the material stop 12. It is contemplated that the feed rod 13 can also be attached to the material stop 12 by welding. Other ways of connecting the filling rod 13 to the material stopper 12 are also conceivable.
It will be appreciated that the drive means 13 may take other forms than a feed rod, which can move the material barrier 12 to open and close the mouth of the feed tube 11.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present disclosure should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure should be subject to the protection scope of the claims.
Claims (10)
1. A charging device for a single crystal furnace, comprising:
a feed tube comprising a feed end and a discharge end;
a material stopper disposed at the discharge end of the feed tube; and
a drive configured for moving the material stop to open and close a nozzle of the charging tube at the discharge end,
wherein, the filling tube includes first filling tube and second filling tube, the one end of one of first filling tube and second filling tube can be connected with the one end of the other at its different positions on the axial direction of filling tube to make the filling tube is telescopic.
2. The charging device for the single crystal furnace according to claim 1, wherein the one end of the one is provided on an outer surface thereof with at least two annular grooves extending around a circumferential direction of the one end of the one and spaced apart from each other in the axial direction, and a chute extending through the at least two annular grooves to communicate the at least two annular grooves and extending to penetrate an end surface of the one end of the one, and the one end of the other is provided on an inner surface thereof with a snap member, wherein the snap member is movable along the chute into any one of the at least two annular grooves and is snapped therein.
3. The charging device for the single crystal furnace according to claim 2, wherein said one end of said one is provided with two of said chutes on an outer surface thereof in diametrically opposed relation, and said one end of said other is provided with two of said catches on an inner surface thereof in diametrically opposed relation.
4. The charging device for the single crystal furnace according to claim 2 or 3, wherein the other is the second charging pipe, the second charging pipe includes an upper end cylindrical portion and a lower end involute portion, and the seizing means is provided on an inner surface of the upper end cylindrical portion.
5. The charging device for a single crystal furnace according to claim 4, wherein said material stopper can be received in said lower involute portion of said second charging tube to close said orifice of said charging tube.
6. The charging device for the single crystal furnace according to any one of claims 1 to 3, wherein an upper surface of the material stopper which comes into contact with the material is convex.
7. The charging device for a single crystal furnace according to claim 6, wherein a steepness of the convex shape can be configured differently according to different charging amounts and different thermal field structures of the single crystal furnace.
8. The charging device for the single crystal furnace according to any one of claims 1 to 3, wherein surfaces of the material stopper and the second charging pipe are coated with a nano thermal barrier coating.
9. The charging device for a single crystal furnace according to any one of claims 1 to 3, wherein the first charging pipe is provided at the other end thereof with an engaging structure for engaging the charging pipe on the single crystal furnace so as not to move downward any more.
10. The charging device for a single crystal furnace according to any one of claims 1 to 3, wherein the driving device is a charging rod extending in the charging tube through the charging end and connected to the material stopper at one end thereof.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210915133.6A CN115125610A (en) | 2022-08-01 | 2022-08-01 | Feeding device for single crystal furnace |
| TW111140810A TW202311575A (en) | 2022-08-01 | 2022-10-27 | Feeding device for single crystal furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210915133.6A CN115125610A (en) | 2022-08-01 | 2022-08-01 | Feeding device for single crystal furnace |
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| CN115125610A true CN115125610A (en) | 2022-09-30 |
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| CN202210915133.6A Pending CN115125610A (en) | 2022-08-01 | 2022-08-01 | Feeding device for single crystal furnace |
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102312282A (en) * | 2011-09-23 | 2012-01-11 | 海润光伏科技股份有限公司 | Two-stage feeding device for polysilicon ingot casting |
| CN105151821A (en) * | 2015-07-01 | 2015-12-16 | 贵州顺安机电设备有限公司 | Novel compound feeding device |
| CN206458127U (en) * | 2017-01-24 | 2017-09-01 | 四川华帅建筑设计有限公司 | A kind of spatially-variable movable energy-saving building |
| CN107541770A (en) * | 2016-06-23 | 2018-01-05 | 扬州合晶科技有限公司 | A kind of feeder of monocrystalline silicon growing furnace |
| CN209043054U (en) * | 2018-09-18 | 2019-06-28 | 云南驰宏锌锗股份有限公司 | A kind of telescopic charging, smoke gas collecting apparatus |
| CN209871459U (en) * | 2019-05-16 | 2019-12-31 | 淮安长丰机电设备有限公司 | Loading attachment is used in rubber tire production |
| CN212474004U (en) * | 2020-06-15 | 2021-02-05 | 青岛帝保隆微碳农业技术有限公司 | Accurate metering and packaging machine for powdery fertilizer |
| CN215609218U (en) * | 2021-09-01 | 2022-01-25 | 郝冬花 | Length-adjustable badminton ball barrel |
| CN114381797A (en) * | 2021-12-29 | 2022-04-22 | 宁夏申和新材料科技有限公司 | Telescopic quartz feeding device, straight pulling single crystal furnace and method for improving pulling speed |
| CN216445500U (en) * | 2021-12-29 | 2022-05-06 | 西安奕斯伟材料科技有限公司 | Silicon material secondary feeding device and single crystal furnace |
| CN216952123U (en) * | 2021-12-09 | 2022-07-12 | 南亚新材料科技股份有限公司 | Copper-clad plate trade glue mixing prevents powder jam pipeline structure |
-
2022
- 2022-08-01 CN CN202210915133.6A patent/CN115125610A/en active Pending
- 2022-10-27 TW TW111140810A patent/TW202311575A/en unknown
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102312282A (en) * | 2011-09-23 | 2012-01-11 | 海润光伏科技股份有限公司 | Two-stage feeding device for polysilicon ingot casting |
| CN105151821A (en) * | 2015-07-01 | 2015-12-16 | 贵州顺安机电设备有限公司 | Novel compound feeding device |
| CN107541770A (en) * | 2016-06-23 | 2018-01-05 | 扬州合晶科技有限公司 | A kind of feeder of monocrystalline silicon growing furnace |
| CN206458127U (en) * | 2017-01-24 | 2017-09-01 | 四川华帅建筑设计有限公司 | A kind of spatially-variable movable energy-saving building |
| CN209043054U (en) * | 2018-09-18 | 2019-06-28 | 云南驰宏锌锗股份有限公司 | A kind of telescopic charging, smoke gas collecting apparatus |
| CN209871459U (en) * | 2019-05-16 | 2019-12-31 | 淮安长丰机电设备有限公司 | Loading attachment is used in rubber tire production |
| CN212474004U (en) * | 2020-06-15 | 2021-02-05 | 青岛帝保隆微碳农业技术有限公司 | Accurate metering and packaging machine for powdery fertilizer |
| CN215609218U (en) * | 2021-09-01 | 2022-01-25 | 郝冬花 | Length-adjustable badminton ball barrel |
| CN216952123U (en) * | 2021-12-09 | 2022-07-12 | 南亚新材料科技股份有限公司 | Copper-clad plate trade glue mixing prevents powder jam pipeline structure |
| CN114381797A (en) * | 2021-12-29 | 2022-04-22 | 宁夏申和新材料科技有限公司 | Telescopic quartz feeding device, straight pulling single crystal furnace and method for improving pulling speed |
| CN216445500U (en) * | 2021-12-29 | 2022-05-06 | 西安奕斯伟材料科技有限公司 | Silicon material secondary feeding device and single crystal furnace |
Also Published As
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|---|---|
| TW202311575A (en) | 2023-03-16 |
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