CN107541770A - A kind of feeder of monocrystalline silicon growing furnace - Google Patents
A kind of feeder of monocrystalline silicon growing furnace Download PDFInfo
- Publication number
- CN107541770A CN107541770A CN201610461028.4A CN201610461028A CN107541770A CN 107541770 A CN107541770 A CN 107541770A CN 201610461028 A CN201610461028 A CN 201610461028A CN 107541770 A CN107541770 A CN 107541770A
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- CN
- China
- Prior art keywords
- stock
- charge pipe
- feeder
- monocrystalline silicon
- growing furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 44
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 13
- 230000033001 locomotion Effects 0.000 claims abstract description 12
- 239000010453 quartz Substances 0.000 claims abstract description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910000831 Steel Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 239000010959 steel Substances 0.000 claims description 4
- 230000008602 contraction Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 22
- 229910052710 silicon Inorganic materials 0.000 abstract description 22
- 239000010703 silicon Substances 0.000 abstract description 22
- 239000002994 raw material Substances 0.000 abstract description 21
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 239000002210 silicon-based material Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention provides a kind of feeder of monocrystalline silicon growing furnace, including charge pipe and stock, the lower end of the charge pipe is placed in the growth furnace provided with dog-house, there is the siphunculus to be moved up and down for the stock inside the charge pipe at axial location, the charge pipe has the neck to contract in the top of the dog-house, the lower end of the stock has a cone-shaped portion of remaining silent, the portion of remaining silent be placed between the neck and the dog-house and can with the stock up and down motion and the neck clamping or separate.The present invention can add silicon raw material to increase the total amount of feeding of single blow-on, so as to substantially reduce production cost in the production process of monocrystalline silicon constantly into crucible.Meanwhile feeder of the invention uses quartz material with the part that single crystal silicon materials directly contact, and avoids the pollution of single crystal silicon materials.
Description
Technical field
The present invention relates to monocrystalline silicon preparing technical field, more particularly to a kind of charging of monocrystalline silicon growing furnace
Device.
Background technology
Monocrystalline silicon preparation method mainly has vertical pulling method and zone-melting process, has a kind of CZ again in vertical pulling method preparation technology
Monocrystalline growing process, it is necessary to use monocrystalline silicon in CZ monocrystalline growing process prepares the equipment of monocrystalline silicon
Growth furnace.Monocrystalline silicon growing furnace includes silica crucible.When preparing, first crucible is positioned in thermal field,
Silicon raw material is filled into crucible again, then directly the silicon raw material of the melting in crucible is evacuated, material,
The CZ monocrystalline production stages such as seeding, shouldering, isometrical.
In current CZ monocrystalline production technologies, silica crucible is the expendable vessel of drawn monocrystalline silicon, often
Producing a stove monocrystalline silicon will use up a silica crucible.Due to silicon raw material be mostly irregular shape (it is block,
Granular and sheet etc.), when variously-shaped silicon raw material is stacked in crucible, very big space can be produced,
In addition, the density of element silicon solid forms is less than the density of its liquid form, so when silicon raw material is melted completely
During change, 2/3rds of liquid level less than crucible total capacity in crucible so that can be made when burning stove every time
Standby monocrystalline silicon Yield comparison is low, causes production cost to remain high.
Therefore, it is intended that a kind of feeder of monocrystalline silicon growing furnace solves drawbacks described above.
The content of the invention
It is an object of the invention to provide a kind of list that can add raw material constantly into crucible in process of production
The feeder of crystal silicon growth furnace.
The technical scheme that the present invention solves above-mentioned technical problem is as follows：
A kind of feeder of monocrystalline silicon growing furnace, including charge pipe and stock, the lower end of the charge pipe are set
There is dog-house to be placed in the growth furnace, have inside the charge pipe at axial location and supply the stock
The siphunculus of up and down motion, the charge pipe have the neck to contract, institute in the top of the dog-house
The lower end for stating stock has a cone-shaped portion of remaining silent, and the portion of remaining silent is placed in the neck and fed intake with described
Between mouthful and it can stretch and the neck clamping or separate with the upper and lower of the stock.
On the basis of above-mentioned technical proposal, the present invention can also do following improvement：
Alternatively, the siphunculus is fixed on by multiple they sup-ports at the inwall of the charge pipe.
Further, the quantity of the support bar be three, three support bars same level and
The even periphery for being distributed in the siphunculus.
Alternatively, the upper end of the charge pipe stretches out provided with Access Division, the close upper end of the stock
Place is provided with the orthogonal cross bar of axis with the stock.
Alternatively, the length of the cross bar is more than the external diameter of the charge pipe.
Alternatively, the maximum gauge in the portion of remaining silent is more than the minimum diameter of the neck.
Alternatively, the horizontal plane where the portion of remaining silent is in the top of the horizontal plane where the dog-house.
Alternatively, the upper end of the stock is connected with disk, and the disk is by mechanical movement to drive
Stock is stated to be moved up and down.
Alternatively, the charge pipe and the portion of remaining silent use quartz material, and the stock uses molybdenum steel material
Material.
Beneficial effects of the present invention：
1. the present invention can add silicon raw material to increase in the production process of monocrystalline silicon constantly into crucible
The total amount of feeding of single blow-on, so as to substantially reduce production cost；
2. the present invention can realize clamping of the portion of remaining silent with neck with separating by the up and down motion of stock, from
And the amount to be fed intake into crucible can be controlled, and then realize the control of monocrystalline silicon yield in whole production process
System；
3. the feeder of the present invention uses quartz material with the part that single crystal silicon materials directly contact, avoid
The pollutions of single crystal silicon materials.
Brief description of the drawings
Fig. 1 is the front view of the feeder of the monocrystalline silicon growing furnace of the embodiment of the present invention；
Fig. 2 is the top view of the charge pipe of the feeder of monocrystalline silicon growing furnace shown in Fig. 1；
Fig. 3 is the front view of the charge pipe of the feeder of monocrystalline silicon growing furnace shown in Fig. 1；
Fig. 4 is the front view of the stock of the feeder of monocrystalline silicon growing furnace shown in Fig. 1.
Embodiment
The principle and feature of the present invention are described below in conjunction with accompanying drawing, example is served only for explaining this
Invention, is not intended to limit the scope of the present invention.
Fig. 1 is the front view of the feeder of the monocrystalline silicon growing furnace of the embodiment of the present invention.Referring to Fig. 1, sheet
Invention provides a kind of feeder of monocrystalline silicon growing furnace, including charge pipe 1 and stock 2, the charging
The lower end of pipe 1 is placed in the growth furnace (not shown) provided with dog-house 3, the charge pipe
There is the siphunculus 4 to be moved up and down for the stock 2, the charge pipe 1 is in institute at 1 inside axial location
The top for stating dog-house 3 is cone-shaped with one with the neck 5 to contract, the lower end of the stock 2
Portion 6 of remaining silent, the portion 6 of remaining silent is placed between the neck 5 and the dog-house 3 and can be with described
The up and down motion of stock 2 and the clamping of neck 5 separate.
During monocrystalline silicon growing, silicon raw material is from the upper end of the charge pipe 1 by the charge pipe 1
Inwall and the siphunculus 4 outer wall between cavity enter in charge pipe 1.When the lower end of stock 2
Portion 6 remain silent when being moved downwardly to the position close to dog-house 3, remaining silent, it is empty to be formed between portion 6 and neck 5
Chamber is for silicon raw material by the way that silicon raw material reaches dog-house 3 hence into crucible.If need not be again to earthenware
Fed intake in crucible, the portion 6 of remaining silent of the lower end of stock 2 is moved upward to the position away from dog-house 3,
Until clamping is remained silent between portion 6 and neck 5 so as to prevent silicon raw material from passing through.
The present invention can add silicon raw material to increase list in the production process of monocrystalline silicon constantly into crucible
The total amount of feeding of secondary blow-on, so as to substantially reduce production cost.
The present invention can realize clamping of the portion of remaining silent 6 with neck 5 with separating by the up and down motion of stock 2,
So as to control the amount to be fed intake into crucible, and then realize the control of monocrystalline silicon yield in whole production process
System.
Fig. 2 is the top view of the charge pipe 1 of the feeder of monocrystalline silicon growing furnace shown in Fig. 1.Referring to Fig. 2,
The siphunculus 4 is supported and fixed on by multiple support bars 7 at the inwall of the charge pipe 1.
Referring to Fig. 2, the quantity of the support bar 7 is preferably three, and three support bars 7 are same
Horizontal plane and the periphery for being evenly distributed on the siphunculus 4.The siphunculus inside charge pipe 1 can so be ensured
4 can stablize support.It is understood that three support bars 7 is one group of support bar groups and are arranged in institute
At the medium position for stating the axis of siphunculus 4, multigroup support bar group can also be set, and multigroup support bar group can
To be arranged at the upper end position of the axis of the siphunculus 4 or at lower end position.
Fig. 3 is the front view of the charge pipe 1 of the feeder of monocrystalline silicon growing furnace shown in Fig. 1.Referring to Fig. 3,
The outer wall of the charge pipe 1 is in the shape first shunk and recovered again from top to bottom, wherein, it is retracted to the limit
When form neck 5 of the present invention, the cross-sectional area of the neck 5 is minimum, therefore in neck 5
The silicon raw material passed through also obtains a definite limitation.Otherwise, if the outer wall of the charge pipe 1 is equal from top to bottom
For long tubular, then during stock 2 upwards motion, substantial amounts of silicon raw material is unrestricted directly
Enter in growth furnace, so easily cause charging during it is uncontrollable and cause charging overflow
Situation.And the neck 5 of the present invention can exactly avoid the situation that charging is overflowed, so neck 5 is transversal
Area also determines the speed of charging.
Referring to Fig. 3, the outer wall of the charge pipe 1 of the top of neck 5 can be the circular arc gradually tapered up,
The outer wall of the charge pipe 1 of the lower section of neck 5 can be the linear gradually recovered.It is understood that
The outer wall of the charge pipe 1 of the top of neck 5 can also be the linear gradually tapered up, the neck 5
The outer wall of the charge pipe 1 of lower section can also be the linear gradually recovered.The charging of the top of neck 5
The outer wall of pipe 1 can also be the circular arc gradually tapered up, the outer wall of the charge pipe 1 of the lower section of neck 5
Can also be the circular arc gradually recovered.The outer wall of the charge pipe 1 of the top of the neck 5 can also be by
The linear of contracting is tapered, the outer wall of the charge pipe 1 of the lower section of neck 5 can also be the circle gradually recovered
Arc.So it is provided to that the silicon raw material in the top of neck 5 and the lower section of neck 5 can be made all to have one
The movement velocity of individual buffering, it can preferably form the control to the process that feeds.
Referring to Fig. 3, the neck 5 is located at close to the top of the dog-house 3, so passes through neck 5
Silicon raw material by neck 5 and remain silent portion 6 cavity after can directly from dog-house 3 enter growth furnace in.
The diameter of the neck 5 can be the 40%-75% of the diameter of the charge pipe 1, and preferable scheme is neck
The 60% of a diameter of diameter of charge pipe 1 in portion 5.
Referring to Fig. 3, the upper end of the charge pipe 11 stretches out provided with Access Division 8.Referring to Fig. 1, institute
State the orthogonal cross bar 9 of axis being provided with by place near to the upper end with the stock 2 of stock 2.The card
The shape of socket part 8 is not limited to the shape in figure, can also be circular or square.It is described referring to Fig. 1
The length of cross bar 9 is more than the external diameter of the charge pipe 1.It can so prevent stock 2 from sliding to move downward
Until portion 6 of remaining silent is entered in the silica crucible of high temperature.
Also there is the siphunculus to be moved up and down for the stock 2 referring to Fig. 3, at the axial location of charge pipe 1
4, siphunculus 4 is not only the track that stock 2 provides up and down motion, while siphunculus 4 uses quartz material,
Stock 2 is avoided directly to contact with silicon raw material to cause the pollution to silicon raw material.
Referring to Fig. 1, the maximum gauge in the portion 6 of remaining silent is more than the minimum diameter of the neck 5.So,
In the case where silicon raw material need not be added into crucible again, can make the portion of remaining silent 6 and the clamping of neck 5 with
Silicon raw material is prevented to pass through.
Referring to Fig. 1, the horizontal plane where the portion 6 of remaining silent is in the horizontal plane where the dog-house 3
Top.
Fig. 4 is the front view of the stock of the feeder of monocrystalline silicon growing furnace shown in Fig. 1.Referring to Fig. 4, institute
Cross bar 9 is stated to divide the stock 2 for the 1st below the cross bar 9 and on the cross bar 9
The second segment 22 of side, the length of the length of the first paragraph 21 together with the portion 6 of remaining silent of the lower end of stock 2
Entire length of the degree less than the charge pipe 1.So, moved regardless of stock about 2, stock 2
The portion 6 of remaining silent of lower end is all the time all without the dog-house 3 for reaching charge pipe 1, so as to which the portion of remaining silent 6 can be kept away
Exempt from into the silica crucible of high temperature.
Referring to Fig. 1, the upper end of the stock 2 is connected with disk 10, and the disk 10 is transported by machinery
Move to drive the stock 2 to be moved up and down.The up and down motion of manual control stock 2 thus is avoided that,
It is time saving and energy saving.
In a preferred embodiment, the charge pipe 1 and the portion 6 of remaining silent use quartz material, institute
State stock 2 and use molybdenum steel material.
The feeder of the present invention uses quartz material with the part that single crystal silicon materials directly contact, and avoids
The pollution of single crystal silicon materials.And stock 2 is adapted to stone using the molybdenum steel material with higher thermal epistasis
Hot environment above English crucible.
Presently preferred embodiments of the present invention is the foregoing is only, is not intended to limit the invention, it is all in the present invention
Spirit and principle within, any modification, equivalent substitution and improvements made etc., should be included in this hair
Within bright protection domain.
Claims (9)
1. a kind of feeder of monocrystalline silicon growing furnace, it is characterised in that described including charge pipe and stock
The lower end of charge pipe is placed in the growth furnace provided with dog-house, inside the charge pipe at axial location
With the siphunculus to be moved up and down for the stock, the charge pipe has inside in the top of the dog-house
The neck of contraction, the lower end of the stock have a cone-shaped portion of remaining silent, and the portion of remaining silent is placed in described
Between neck and the dog-house and can with the stock up and down motion and the neck clamping or separate.
2. the feeder of monocrystalline silicon growing furnace according to claim 1, it is characterised in that described logical
Pipe is fixed on by multiple they sup-ports at the inwall of the charge pipe.
3. the feeder of monocrystalline silicon growing furnace according to claim 2, it is characterised in that the branch
The quantity of strut is three, and three support bars are in same level and are evenly distributed on the siphunculus
Periphery.
4. the feeder of the monocrystalline silicon growing furnace according to any one of claim 1-3, its feature exists
In, the upper end of the charge pipe stretches out provided with Access Division, the stock by place near to the upper end be provided with
The orthogonal cross bar of axis of the stock.
5. the feeder of monocrystalline silicon growing furnace according to claim 4, it is characterised in that the horizontal stroke
The length of bar is more than the external diameter of the charge pipe.
6. the feeder of the monocrystalline silicon growing furnace according to any one of claim 1-5, its feature exists
In the maximum gauge in the portion of remaining silent is more than the minimum diameter of the neck.
7. the feeder of the monocrystalline silicon growing furnace according to any one of claim 1-6, its feature exists
In the horizontal plane where the portion of remaining silent is in the top of the horizontal plane where the dog-house.
8. the feeder of the monocrystalline silicon growing furnace according to any one of claim 1-7, its feature exists
Disk is connected with the upper end of, the stock, and the disk is by mechanical movement to drive the stock to enter
Row moves up and down.
9. the feeder of the monocrystalline silicon growing furnace according to any one of claim 1-8, its feature exists
In the charge pipe and the portion of remaining silent use quartz material, and the stock uses molybdenum steel material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610461028.4A CN107541770A (en) | 2016-06-23 | 2016-06-23 | A kind of feeder of monocrystalline silicon growing furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610461028.4A CN107541770A (en) | 2016-06-23 | 2016-06-23 | A kind of feeder of monocrystalline silicon growing furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107541770A true CN107541770A (en) | 2018-01-05 |
Family
ID=60960246
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610461028.4A Withdrawn CN107541770A (en) | 2016-06-23 | 2016-06-23 | A kind of feeder of monocrystalline silicon growing furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107541770A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111733446A (en) * | 2020-07-03 | 2020-10-02 | 吴颖凯 | External charging mechanism of monocrystalline silicon growth furnace |
| CN114381797A (en) * | 2021-12-29 | 2022-04-22 | 宁夏申和新材料科技有限公司 | Telescopic quartz feeding device, straight pulling single crystal furnace and method for improving pulling speed |
| CN115125610A (en) * | 2022-08-01 | 2022-09-30 | 西安奕斯伟材料科技有限公司 | Feeding device for single crystal furnace |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003002779A (en) * | 2001-06-20 | 2003-01-08 | Komatsu Electronic Metals Co Ltd | Raw material feeding device for single crystal pulling vessel and method for feeding raw material |
| CN203668558U (en) * | 2014-04-25 | 2014-06-25 | 上海合晶硅材料有限公司 | Single crystal furnace feeder and single crystal furnace including single crystal furnace feeder |
| CN204849114U (en) * | 2015-07-31 | 2015-12-09 | 包头市山晟新能源有限责任公司 | A secondary feeding ware for monocrystalline silicon is grown |
-
2016
- 2016-06-23 CN CN201610461028.4A patent/CN107541770A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003002779A (en) * | 2001-06-20 | 2003-01-08 | Komatsu Electronic Metals Co Ltd | Raw material feeding device for single crystal pulling vessel and method for feeding raw material |
| CN203668558U (en) * | 2014-04-25 | 2014-06-25 | 上海合晶硅材料有限公司 | Single crystal furnace feeder and single crystal furnace including single crystal furnace feeder |
| CN204849114U (en) * | 2015-07-31 | 2015-12-09 | 包头市山晟新能源有限责任公司 | A secondary feeding ware for monocrystalline silicon is grown |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111733446A (en) * | 2020-07-03 | 2020-10-02 | 吴颖凯 | External charging mechanism of monocrystalline silicon growth furnace |
| CN114381797A (en) * | 2021-12-29 | 2022-04-22 | 宁夏申和新材料科技有限公司 | Telescopic quartz feeding device, straight pulling single crystal furnace and method for improving pulling speed |
| CN115125610A (en) * | 2022-08-01 | 2022-09-30 | 西安奕斯伟材料科技有限公司 | Feeding device for single crystal furnace |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20180105 |