CN102299265A - Illuminating device of organic light-emitting diode and heat radiation encapsulation layer thereof, and preparation methods thereof - Google Patents
Illuminating device of organic light-emitting diode and heat radiation encapsulation layer thereof, and preparation methods thereof Download PDFInfo
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Abstract
The invention discloses an illuminating device of an organic light-emitting diode and a heat radiation encapsulation layer thereof, and preparation methods thereof. A heat radiation encapsulation layer is utilized by a prepared an illuminating device of an organic light-emitting diode to carry out heat radiation during encapsulation. The heat radiation encapsulation layer is characterized in that: the heat radiation encapsulation layer comprises inorganic insulation layers and heat-conducting metal layers, wherein the inorganic insulation layers and the heat-conducting metal layers have high thermal conductivities and are alternatively overlapped with periodicity; the number of periods is n, which is greater than or equal to 1 and is less than or equal to 10. According to the heat radiation encapsulation layer that is prepared by the encapsulation method, a compact sealing layer is formed and a heat radiating performance of the illuminating device is effectively improved; meanwhile, sensitive problems to water and oxygen of the device are also solved, so that it is in favor of improvement of performances of the device and life of the device is prolonged.
Description
Technical field
The present invention relates to the photoelectron technology field, be specifically related to a kind of heat radiation encapsulated layer and preparation method of illuminating device of Organic Light Emitting Diode.
Background technology
Organic Light Emitting Diode (OLED) is considered to the optimal third generation Display Technique after lcd technology (LCD).Since 1987, through twenties years full-fledged gradually, and have widely in every field such as flat panel display, illumination, display backlight sources and to use, also created growing great market.
The organic material of OLED environment to external world has very strong sensitiveness, and the water in the atmospheric environment becomes branch to make the material severe exacerbation with oxygen etc., thereby can make device performance sharply reduce after packaged device is not placed in atmospheric environment, even loses performance fully.In order to prolong device lifetime, improve device stability, must encapsulate device.General way is to coat with glass comprising that the luminous component of electrode is whole.Yet, in this case,, must leave the slit for fear of OLED device and glass contact, heat is difficult to conduct, and what conduct heat mainly is the front surface glass part.Because glass is not allow transcalent material, so it is overheated easily after the concentrated energising, thereby damage device, the difficulty that has high brightness, high efficiency device for preparation can increase, this has also limited the application of OLED aspect the large tracts of land size simultaneously, even the thin-film package technology, also can because of the organic substance that wherein is used to seal be heat non-conductor and be unfavorable for the heat radiation.Based on above present situation, adopt which kind of encapsulating material and method for packing just to become a difficult problem that needs to be resolved hurrily.
Summary of the invention
The present invention is intended to the heat dissipation problem at existing OLED glass packaging existence, a kind of heat radiation encapsulation layer structure of Organic Light Emitting Diode illuminating device is proposed, adopt the present invention both to avoid the OLED material to contact with water, oxygen, solved the OLED device causes device failure because of the heat dispersion difference problem again, enhance device life-span effectively, improve device stability, reduce cost simultaneously, simplify technology.
For achieving the above object, the present invention is by the following technical solutions:
A kind of heat radiation encapsulated layer of Organic Light Emitting Diode illuminating device is characterized in that, the heat radiation encapsulated layer is overlapped by inorganic insulation layer with high heat conductance (21) and heat-conducting metal layer (22) alternate cycle.
Described material with inorganic insulation layer (21) of high heat conductance comprises that a kind of in diamond like carbon, aluminium nitride, boron nitride, silicon nitride, alundum (Al or the magnesium oxide, the material of described heat-conducting metal layer (22) comprise a kind of in silver, copper, gold or the aluminium.
Described inorganic insulation layer (21) and heat-conducting metal layer (22) alternate cycle overlap, and periodicity is n, 1≤n≤10.
The thickness of described inorganic insulation layer (21) is 50-500 nm, and the thickness of heat-conducting metal (22) is 50-500 nm.
A kind of Organic Light Emitting Diode illuminating device, include OLED (1), heat radiation encapsulated layer, Organic Light Emitting Diode (1) is by substrate (11), anode layer (12), organic power layer (13), metallic cathode layer (14) order builds up, and it is characterized in that: heat radiation encapsulated layer (2) is overlapped by inorganic insulation layer (21) material and heat-conducting metal layer (22) alternate cycle.
A kind of preparation method of Organic Light Emitting Diode illuminating device may further comprise the steps:
1. prepare each organic layer of Organic Light Emitting Diode successively, prepare metallic cathode then;
2. on the above-mentioned metallic cathode layer (14) for preparing, prepare inorganic insulation layer (21) and heat-conducting metal layer (22) successively, wherein, the thickness of inorganic insulation layer (21) is 50-500 nm, the thickness of heat-conducting metal layer (22) is 50-500 nm, it is n that inorganic insulation layer (21) and heat-conducting metal layer (22) replace overlapping periodicity, 1≤n≤10;
3. the life-span of device and other parameters after the test package.
Described inorganic encapsulated layer (21) and heat-conducting metal layer (22) can adopt vacuum evaporation, magnetron sputtering, ion plating, dc sputtering deposition, the radio frequency sputtering plated film, ion beam sputtering deposition, ion beam assisted depositing, plasma reinforced chemical vapour deposition, high density inductance coupling high formula plasma source chemical vapor deposition, ion cluster bundle deposition, Metalorganic Chemical Vapor Deposition, the catalyst chemical vapour deposition (CVD), the pulsed laser deposition method, pulsed plasma method, the pulse laser method, electron beam evaporation, sol-gel process, inkjet printing, one or several modes in the plating and forming.
Beneficial effect of the present invention:
1, heat radiation encapsulated layer of the present invention adopts inorganic insulating material and the overlapping composition structure of heat-conducting metal alternate cycle with high heat conductance, both avoided the OLED material to contact with water, oxygen, solved the OLED device causes device failure because of the heat dispersion difference problem again, enhance device life-span effectively, improve device stability, reduce cost simultaneously, simplify technology.
2, adopt various preferred proportions and the technological parameter that provides among the present invention, can obtain more excellent device performance.
Description of drawings
Fig. 1 is the encapsulating structure schematic diagram of organic light emitting diode device among the embodiment 1～14 provided by the invention;
Fig. 2 is the performance comparison that adopts the device lifetime of heat radiation encapsulated layer preparation in embodiment 1,5,7,9,11 and 13;
Wherein, the 1st, organic light emitting diode device, wherein, and the 11st, substrate, the 12nd, anode layer, the 13rd, organic function layer, the 14th, metallic cathode layer, the 2nd, heat radiation encapsulated layer of the present invention, overlap with certain periodicity n alternate cycle by 21 and 22, the 21st, inorganic insulation layer, the 22nd, heat-conducting metal.
Specific embodiments
The invention will be further described below in conjunction with drawings and Examples.
Substrate described in the present invention 11 is the support of electrode and organic thin film layer, it has the good light transmittance energy in the visible region, the ability that the infiltration of certain anti-steam and oxygen is arranged, profile pattern is preferably arranged, it can be glass or flexible substrate, and flexible substrate adopts a kind of material or the thin metal in polyesters, the poly-phthalimide compound.
The anode layer 12 of Organic Light Emitting Diode described in the present invention is as the articulamentum of Organic Light Emitting Diode forward voltage, and it requires to have electric conductivity, visible transparent and higher work function preferably.Usually adopt the metal material (as gold, copper, silver, platinum etc.) of inorganic, metal oxide (as tin indium oxide tin indium oxide (ITO), zinc oxide ZnO etc.), organic conductive polymer (as PEDOT:PSS, PANI etc.) or high work function.
The metallic cathode layer 14 of Organic Light Emitting Diode described in the present invention is as the articulamentum of device negative voltage, its requires to have electric conductivity and lower work function preferably, and metallic cathode is generally the alloy of the lower metal of work functions such as low workfunction metal material lithium, magnesium, calcium, strontium, aluminium, indium or they and copper, gold, silver layer by layer; Perhaps the buffer insulation layer that one deck is very thin is (as LiF, MgF
2Deng) and metal or alloy noted earlier.
The inorganic insulation layer material 21 with high heat conductance of Organic Light Emitting Diode described in the present invention comprises a kind of in diamond like carbon, aluminium nitride, boron nitride, silicon nitride, alundum (Al or the magnesium oxide.
The conductive coefficient of diamond like carbon described in the present invention (DLC) is six times of copper approximately, and diamond like carbon film is that a kind of performance is very similar to diamond thin but often contain a large amount of SP
3And SP
2The amorphous carbon-film of hybrid bond.Diamond like carbon film has the performance of many excellences than diamond thin, comprises high rigidity, low-friction coefficient, high-wearing feature, high elastic modulus and good chemical stability, thermal conductivity, electrical insulating property, photopermeability and biocompatibility.Simultaneously, the preparation environment gentleness of diamond-film-like does not need very high temperature, does not need the harsh conditions of diamond film preparations such as corrosivity working gas yet, mixes easily in preparation process.Yet the preparation of high-performance diamond-like carbon film but locks into inner big internal stress.In diamond like carbon film, mix a certain amount of metal and can reduce the internal stress of film effectively, enhanced film toughness, thus effectively improve the bond strength and the wear-out life of film.The metallic element that mixes can be divided into two big classes: a class is the metallic element that can form strong chemical bond with carbon, and as Ti, Mo and W etc., another kind of is the metallic element that forms weak chemical bond with carbon, as Al, Cu, Au and Ag etc.
The conductive coefficient of aluminium nitride described in the present invention (AlN) is about 270 W/mK, aluminium nitride is a kind of covalent crystal with hexagonal wurtzite structure, pure AlN is blue and white, be generally grey or canescence, the performance that many excellences are arranged is such as high heat conductance, low-expansion coefficient, high electric insulation character, high dielectric breakdown strength, excellent mechanical strength and chemical stability, low toxic, good optical performance etc.The preparation method of AlN film has a lot, comparative maturity mainly contain chemical vapour deposition technique, plasma auxiliary chemical vapor deposition method, laser chemical vapor deposition method, metallo-organic compound chemical vapour deposition technique, reaction molecular beam epitaxy method, pulsed laser deposition, ion implantation and reactive magnetron sputtering method, wherein chemical vapour deposition technique and reactive magnetron sputtering method are used more extensive.The AlN film of chemical vapour deposition technique preparation has the characteristics of high-purity, densification, and is easy to form the good crystal of crystal orientation.Major defect is at high temperature to react, the substrate temperature height, and deposition rate is lower, therefore is not suitable for preparation OLED as the insulating heat-conductive layer.The reactive magnetron sputtering method combines the advantage of magnetron sputtering and reactive sputtering, has low temperature, characteristics at a high speed, can prepare the AlN film of the little and compact structure of internal stress.Magnetron sputtering divides direct current and two kinds of methods of radio frequency.The dc magnetron reactive sputtering method is to be the magnetron sputtering power supply with the DC power supply, makes from target as sputter atom that comes out and the gas O that feeds vacuum chamber
2Or N
2(general in addition as ionogenic Ar gas) etc., compounds such as generating oxide, nitride reacts.Thereby realize the various oxides of preparation, nitride etc.Different its magnetron sputtering power supplys that are with the dc magnetron reactive sputtering method of radio frequency reaction magnetron sputtering are AC power.During preparation AlN film, be target, charge into a certain amount of nitrogen as reacting gas with the metallic aluminium.Studies show that along with the increase of stream of nitrogen gas amount, the target surface sputter carries out the transition to the nitrogenize attitude by metallic state, deposition rate obviously reduces thereupon; Deposition rate almost is linear with the increase of radio frequency power and increases, and reduces with the increase of target-substrate distance; Along with the increase of sputtering pressure, deposition rate constantly increases, but after certain air pressure is issued to maximum, reduces with the air pressure increase again.
The conductive coefficient of boron nitride described in the present invention (BN) is 100 ~ 250 W/mK, and boron nitride is a kind of two compounds of being made up of the nitrogen-atoms and the boron atom of equal number.Boron nitride and carbon are isoelectronic, and the same with carbon, and boron nitride is a multiform, and 5 kinds of isomers are arranged, and are respectively hexagonal boron nitride, buergerite boron nitride, tripartite boron nitride, cubic boron nitride and oblique side's boron nitride.Cubic boron nitride is extremely hard, although hardness still is lower than diamond and other similar substances.Similar with diamond, cubic boron nitride is a kind of insulator but a kind of splendid heat carrier.Similar also is the square boron nitride in the boron nitride form of diamond, and cubic boron nitride is because phonon has high thermal conductivity.Contact with oxygen in high temperature, boron nitride can form the passivation layer of a boron oxide.Boron nitride can with metal combination well, this is because boron or the crossbedded formation of nitrogen alloy.Square boron nitride crystal material often is used in the cutting head of cutting tool.The cubic boron nitride of sintering is a kind of nonconducting fin material, so potential using value is arranged in the microelectronics field.
The conductive coefficient of silicon nitride described in the present invention (SiN) is about 50 W/mK, silicon nitride is a kind of functional material of function admirable, it has good dielectric property (dielectric constant is low, loss is low), high-insulativity, and the silicon nitride of high compactness is to foreign ion, even the Na of small size very
+Good blocking capability is all arranged.Therefore, silicon nitride is used as a kind of layer of device surface passivation efficiently and is widely used in the semiconductor device technology.At present, utilize chemical gas-phase deposition method to prepare silicon nitride film and mainly contain plasma enhanced CVD (Chemical Vapor Deposition) method, low-pressure chemical vapor phase deposition method, radio frequency plasma enhanced chemical vapour deposition, photochemistry vapour deposition or the like.Advantages such as the plasma enhanced chemical vapor deposition is at present comparatively desirable and important silicon nitride film preparation method, and it has, and depositing temperature is low, the deposited film pin hole is little, good uniformity, step coverage are good.
(the Al of alundum (Al described in the present invention
2O
3) conductive coefficient be 25 ~ 40 W/mK, Al
2O
3Film has excellent dielectric properties, optical property, mechanical performance and high high-temp stability, is a kind of important inorganic functional ceramic material.Preparation Al
2O
3Film process has a lot, as anode oxidation method, sol-gel process, chemical vapour deposition technique and magnetron sputtering method etc.Dc magnetron reactive sputtering can adopt rafifinal target and high-purity O
2Reacting gas prepares high-purity Al
2O
3Film has been avoided the high-purity Al of preparation
2O
3Loaded down with trivial details and the application complexity of compound target, expensive rf magnetron sputtering equipment; Film composition is easy to control; Film forming speed is fast, temperature is low; Advantages such as non-environmental-pollution, thereby be widely used.
The conductive coefficient of magnesium oxide described in the present invention (MgO) is 25 ~ 50 W/mK, magnesium oxide is the solid insulation inorganic material that the sodium chloride crystal structure is arranged, presenting better chemical inertia, electrical insulating property, optical transparency, high-temperature stability and high thermal conductivity, is a kind of good cushioning layer material.Because the key property such as lattice constant of magnesium oxide and semiconductor substrate materials Si commonly used, electrode material Pt and ferroelectric and superconductor are very approaching, people introduce magnesia film and have prepared high-quality ferroelectric or superconducting thin film as resilient coating on semiconductor (mainly being Si and GaAs).Magnesia film still is a kind of important dielectric protective materials.The MgO film is because have good anti-sputter ability and high secondary electron yield, so extensively be used in the plasma scope (PDP) as diaphragm.At present, the Chang Yong method for preparing the MgO film has electron beam evaporation, pulsed laser deposition method, sputtering method, Metalorganic Chemical Vapor Deposition and sol-gel process etc.The present invention selects ion beam assisted depositing (IAD) preparation MgO film for use.
The heat-conducting metal 22 of OLED described in the present invention comprises a kind of in silver, copper, gold or the aluminium, wherein, the conductive coefficient of silver is 429 W/mK, and the conductive coefficient of copper is 401 W/mK, the conductive coefficient of gold is 317 W/mK, and the conductive coefficient of aluminium is 237 W/mK.
Below be specific embodiments of the invention:
As shown in Figure 1,1 is Organic Light Emitting Diode, and anode layer 12 is tin indium oxide (ITO), and metallic cathode layer 14 is the Mg:Ag alloy, and inorganic insulation layer 21 is a diamond like carbon, and thickness is 500 nm, and heat-conducting metal layer 22 is Al, and thickness is 50 nm, and periodicity n is 1.
The preparation method is as follows:
1. finish the preparation of anode, organic function layer, negative electrode in the OLED device architecture;
2. adopt vacuum magnetic filtering technique, substrate is applied the low frequencies periodic back bias voltage, the very smooth non-crystal diamond film of deposition surface on the substrate of room temperature, this film combine very desirable with substrate.This technical method has following characteristics: deposited particles is the ion of height ionization, and the deposit film densification is smooth, bonding force strong, the substrate combination is very desirable.In the filtered cathode arc plasma equipment of preparation non-crystal diamond film, adopt high purity graphite as negative electrode, the base vacuum of vacuum chamber is 10
-3About Pa, arc current 70 A, arc voltage 20 V; Filter field supply 20 A, the magnetic field that can produce 40 mT.The high-purity argon gas of use 99.999% is as working gas, and gas flow is controlled at 1.5 sccm.Substrate is for finishing the OLED device of metallic cathode processing procedure, and periodically bias voltage is (0 ,-50 V), and sedimentation time is 20 min, and substrate distance is 30 cm.The DLC film thickness of the method preparation is 500 nm, and surface compact is smooth, and surface roughness is less than 1 nm;
3. on diamond-film-like, prepare the high Al metal level of thermal conductivity of one deck densification again by magnetron sputtering, form sealant jointly, intercept of the infringement of water oxygen, can also increase the toughness of compound seal layer simultaneously the OLED device with diamond-film-like;
4. because high rigidity, the high-wearing feature of diamond-film-like in order to protect the metal level of step 3 preparation, can prepare one deck diamond-film-like again on metal level.In order to strengthen sealing effectiveness, step 3 and 4 can repeatedly repeat, and forms multilayer complex films sealing structure layer;
5. the life-span of test component and parameters thereof.
Embodiment 2
As shown in Figure 1,1 is Organic Light Emitting Diode, and anode layer 12 is tin indium oxide (ITO), and metallic cathode layer 14 is the Mg:Ag alloy, and inorganic insulation layer 21 is a diamond like carbon, and thickness is 50 nm, and heat-conducting metal layer 22 is Cu, and thickness is 50 nm, and periodicity n is 10.
The preparation method is similar to embodiment 1.
Embodiment 3
As shown in Figure 1,1 is Organic Light Emitting Diode, and anode layer 12 is a tin indium oxide (tin indium oxide (ITO), metallic cathode layer 14 is the Mg:Ag alloy, and inorganic insulation layer 21 is a diamond like carbon, and thickness is 100 nm, heat-conducting metal layer 22 is Au, and thickness is 100 nm, and periodicity n is 3.
The preparation method is similar to embodiment 1.
Embodiment 4
As shown in Figure 1,1 is Organic Light Emitting Diode, and anode layer 12 is tin indium oxide (ITO), and metallic cathode layer 14 is the Mg:Ag alloy, and inorganic insulation layer 21 is a diamond like carbon, and thickness is 50 nm, and heat-conducting metal layer 22 is Ag, and thickness is 80 nm, and periodicity n is 5.
The preparation method is similar to embodiment 1.
As shown in Figure 1,1 is Organic Light Emitting Diode, and anode layer 12 is tin indium oxide (ITO), and metallic cathode layer 14 is the Mg:Ag alloy, and inorganic insulation layer 21 is an aluminium nitride, and thickness is 100 nm, and heat-conducting metal layer 22 is Al, and thickness is 500 nm, and periodicity n is 2.
The preparation method is as follows:
1. finish the preparation of anode, organic function layer, negative electrode in the OLED device architecture;
2. adopt radio frequency reaction magnetron sputtering growing aluminum nitride film on the OLED device cathodes.Vacuum is 3 * 10 in the work chamber
-4Pa, sputtering target material are 99.99% Al target, and working gas is 99.99% Ar and 99.99% N
2, remain Ar and N in the experimentation
2Voltage ratio is 24:4, target-substrate distance 7.0 cm, and 20 ℃ of substrate temperatures (room temperature), power are 40 W, sputtering time is 45 min.Before the reactive sputter-deposition film, earlier with the power of 30 W to pre-sputter 15 min of target, to remove the impurity such as oxide of Al target material surface.
3. on aluminium nitride film, prepare the high Al metal level of thermal conductivity of one deck densification again by magnetron sputtering, form sealant jointly, intercept of the infringement of water oxygen, can also increase the toughness of compound seal layer simultaneously the OLED device with aluminium nitride film;
4. in order to strengthen sealing effectiveness, step 3 and 4 can repeatedly repeat, and forms multilayer complex films sealing structure layer;
5. the life-span of test component and parameters thereof.
Embodiment 6
As shown in Figure 1,1 is Organic Light Emitting Diode, and anode layer 12 is tin indium oxide (ITO), and metallic cathode layer 14 is the Mg:Ag alloy, and inorganic insulation layer 21 is an aluminium nitride, and thickness is 100 nm, and heat-conducting metal layer 22 is Ag, and thickness is 100 nm, and periodicity n is 6.
The preparation method is similar to embodiment 5.
As shown in Figure 1,1 is Organic Light Emitting Diode, and anode layer 12 is tin indium oxide (ITO), and metallic cathode layer 14 is the Mg:Ag alloy, and inorganic insulation layer 21 is a boron nitride, and thickness is 200 nm, and heat-conducting metal layer 22 is Au, and thickness is 300 nm, and periodicity n is 2.
The preparation method is as follows:
1. finish the preparation of anode, organic function layer, negative electrode in the OLED device architecture;
2. adopt radio frequency magnetron sputtering method, target is diameter 60 mm, and thick is the hot pressing hexagonal boron nitride (purity is greater than 99.9%) of 1 mm, and target-substrate distance 3 cm, working gas are the mist of argon gas and nitrogen (purity is 99.999%).To the pre-sputter of target 5 min, the base vacuum degree is less than 3 * 10 before the sputter
-4Pa.Power is 200 W, and bias voltage-150 V, the shared concentration ratio of nitrogen are 10%, and air pressure is 0.4 Pa, and underlayer temperature is a room temperature.
3. on boron nitride film, prepare the high Au metal level of thermal conductivity of one deck densification again by magnetron sputtering, form sealant jointly, intercept of the infringement of water oxygen, can also increase the toughness of compound seal layer simultaneously the OLED device with boron nitride film;
4. in order to strengthen sealing effectiveness, step 3 and 4 can repeatedly repeat, and forms multilayer complex films sealing structure layer;
5. the life-span of test component and parameters thereof.
As shown in Figure 1,1 is Organic Light Emitting Diode, and anode layer 12 is tin indium oxide (ITO), and metallic cathode layer 14 is the Mg:Ag alloy, and inorganic insulation layer 21 is a boron nitride, and thickness is 80 nm, and heat-conducting metal layer 22 is Cu, and thickness is 120 nm, and periodicity n is 6.
The preparation method is similar to embodiment 7.
As shown in Figure 1,1 is Organic Light Emitting Diode, and anode layer 12 is tin indium oxide (ITO), and metallic cathode layer 14 is the Mg:Ag alloy, and inorganic insulation layer 21 is a silicon nitride, and thickness is 100 nm, and heat-conducting metal layer 22 is Au, and thickness is 50 nm, and periodicity n is 5.
The preparation method is as follows:
1. finish the preparation of anode, organic function layer, negative electrode in the OLED device architecture;
2. adopt PECVD to prepare silicon nitride film: RF source frequencies 0.1 MHz, radio-frequency power 200 W, operating air pressure 200 Pa use SiH
4-NH
3(Ar) gas system, gas flow ratio R[SiH
4(ml/min)/NH
3(ml/min)]=1/10, adjust SiH according to operating air pressure
4, NH
3And protective gas Ar flow.Depositing temperature is a room temperature, and deposition rate is 2.0 nm/min, and the duration is 100 min.
3. on silicon nitride film, prepare the high Au metal level of thermal conductivity of one deck densification again by magnetron sputtering, form sealant jointly, intercept of the infringement of water oxygen, can also increase the toughness of compound seal layer simultaneously the OLED device with silicon nitride film;
4. in order to strengthen sealing effectiveness, step 3 and 4 can repeatedly repeat, and forms multilayer complex films sealing structure layer;
5. the life-span of test component and parameters thereof.
As shown in Figure 1,1 is Organic Light Emitting Diode, and anode layer 12 is tin indium oxide (ITO), and metallic cathode layer 14 is the Mg:Ag alloy, and inorganic insulation layer 21 is a silicon nitride, and thickness is 150 nm, and heat-conducting metal layer 22 is Ag, and thickness is 350 nm, and periodicity n is 2.
The preparation method is similar to embodiment 10.
As shown in Figure 1,1 is Organic Light Emitting Diode, and anode layer 12 is tin indium oxide (ITO), and metallic cathode layer 14 is the Mg:Ag alloy, and inorganic insulation layer 21 is a magnesium oxide, and thickness is 200 nm, and heat-conducting metal layer 22 is Ag, and thickness is 100 nm, and periodicity n is 1.
The preparation method is as follows:
1. finish the preparation of anode, organic function layer, negative electrode in the OLED device architecture;
2. adopt ion beam assisted depositing to prepare the MgO film: in the process of deposit film, obstructed oxygen, vacuum degree remains on 10
-4The Pa order of magnitude.Purity be 99.9% magnesia block material as evaporating materials, in evaporation, use the argon ion bombardment face, the incidence angle of ion beam becomes 45 to spend with the normal of substrate plane, 30 ℃ of substrate temperatures, deposition rate 5 nm/min, deposit film thickness are 200 nm.
3. on magnesium oxide films, prepare the high Ag metal level of thermal conductivity of one deck densification again by magnetron sputtering, form sealant jointly, intercept of the infringement of water oxygen, can also increase the toughness of compound seal layer simultaneously the OLED device with magnesium oxide;
4. in order to strengthen sealing effectiveness, step 3 and 4 can repeatedly repeat, and forms multilayer complex films sealing structure layer;
5. the life-span of test component and parameters thereof.
As shown in Figure 1,1 is Organic Light Emitting Diode, and anode layer 12 is tin indium oxide (ITO), and metallic cathode layer 14 is the Mg:Ag alloy, and inorganic insulation layer 21 is a magnesium oxide, and thickness is 160 nm, and heat-conducting metal layer 22 is Ag, and thickness is 140 nm, and periodicity n is 2.
The preparation method is similar to embodiment 11.
As shown in Figure 1,1 is Organic Light Emitting Diode, and anode layer 12 is tin indium oxide (ITO), and metallic cathode layer 14 is the Mg:Ag alloy, and inorganic insulation layer 21 is an alundum (Al, and thickness is 200 nm, and heat-conducting metal layer 22 is Al, and thickness is 300 nm, and periodicity n is 1.
The preparation method is as follows:
1. finish the preparation of anode, organic function layer, negative electrode in the OLED device architecture;
2. adopt dc magnetron reactive sputtering: with purity is that 99.99% metallic aluminium is done target, and target-substrate distance is 6 cm, and sputter gas is argon gas (99.999 %), and reacting gas is oxygen (99.999 %).Vacuum degree maintains 1 * 10
-5Pa, sputtering pressure are 1.0 Pa, and the Al target is pre-sputter 5 min in Ar atmosphere, to remove surface contaminant.The Ar throughput is 20 sccm, and oxygen flow is 5 sccm, and substrate temperature is a room temperature, and sputtering power is 230 W, and sputtering time is 60 min.
3. on di-aluminium trioxide film, prepare the high Al metal level of thermal conductivity of one deck densification again by magnetron sputtering, form sealant jointly, intercept of the infringement of water oxygen, can also increase the toughness of compound seal layer simultaneously the OLED device with alundum (Al;
4. in order to strengthen sealing effectiveness, step 3 and 4 can repeatedly repeat, and forms multilayer complex films sealing structure layer;
5. the life-span of test component and parameters thereof.
As shown in Figure 1,1 is Organic Light Emitting Diode, and anode layer 12 is tin indium oxide (ITO), and metallic cathode layer 14 is the Mg:Ag alloy, and inorganic insulation layer 21 is an alundum (Al, and thickness is 100 nm, and heat-conducting metal layer 22 is Ag, and thickness is 100 nm, and periodicity n is 3.
The preparation method is similar to embodiment 13.
Claims (8)
1. the heat radiation encapsulated layer of an Organic Light Emitting Diode illuminating device is characterized in that, heat radiation encapsulated layer (2) is overlapped by inorganic insulation layer with high heat conductance (21) and heat-conducting metal layer (22) alternate cycle.
2. the heat radiation encapsulated layer of Organic Light Emitting Diode according to claim 1, it is characterized in that: described material with inorganic insulation layer (21) of high heat conductance is diamond like carbon, aluminium nitride, boron nitride, silicon nitride, alundum (Al or magnesium oxide, and the material of described heat-conducting metal (22) is silver, copper, gold or aluminium.
3. the heat radiation encapsulated layer of Organic Light Emitting Diode according to claim 1 is characterized in that: described inorganic insulation layer (21) is n with heat-conducting metal layer (22) alternate cycle number, 1≤n≤10.
4. the heat radiation encapsulated layer of Organic Light Emitting Diode according to claim 1, it is characterized in that: the thickness of described inorganic insulation layer (21) is 50-500 nm, the thickness of heat-conducting metal layer (22) is 50-500 nm.
5. Organic Light Emitting Diode illuminating device that adopts the arbitrary described heat radiation encapsulated layer preparation of claim 1-4.
6. method for preparing the arbitrary described heat radiation encapsulated layer of claim 1-4, it is characterized in that: described inorganic encapsulated layer (21) and heat-conducting metal layer (22), adopt vacuum evaporation, magnetron sputtering, ion plating, dc sputtering deposition, the radio frequency sputtering plated film, ion beam sputtering deposition, ion beam assisted depositing, plasma reinforced chemical vapour deposition, high density inductance coupling high formula plasma source chemical vapor deposition, ion cluster bundle deposition, Metalorganic Chemical Vapor Deposition, the catalyst chemical vapour deposition (CVD), the pulsed laser deposition method, pulsed plasma method, the pulse laser method, electron beam evaporation, sol-gel process, inkjet printing, one or several modes in the plating are formed on the metallic cathode layer (14) of Organic Light Emitting Diode.
7. the preparation method of Organic Light Emitting Diode illuminating device heat radiation encapsulated layer according to claim 6, it is characterized in that: on the metallic cathode layer (14) of Organic Light Emitting Diode, prepare inorganic insulation layer (21) and heat-conducting metal layer (22) successively, wherein, the thickness of described inorganic insulation layer (21) is 50-500 nm, the thickness of heat-conducting metal layer (22) is 50-500 nm, and it is n that inorganic insulation layer (21) and heat-conducting metal layer (22) replace overlapping periodicity, 1≤n≤10.
8. method for preparing the described Organic Light Emitting Diode illuminating device of claim 5, it is characterized in that: described inorganic encapsulated layer (21) and heat-conducting metal layer (22), adopt vacuum evaporation, magnetron sputtering, ion plating, dc sputtering deposition, the radio frequency sputtering plated film, ion beam sputtering deposition, ion beam assisted depositing, plasma reinforced chemical vapour deposition, high density inductance coupling high formula plasma source chemical vapor deposition, ion cluster bundle deposition, Metalorganic Chemical Vapor Deposition, the catalyst chemical vapour deposition (CVD), the pulsed laser deposition method, pulsed plasma method, the pulse laser method, electron beam evaporation, sol-gel process, inkjet printing, one or several modes in the plating are formed on the metallic cathode layer (14) of Organic Light Emitting Diode, and step is as follows:
Prepare each organic layer of Organic Light Emitting Diode successively, prepare metallic cathode then;
On the above-mentioned metallic cathode layer (14) for preparing, prepare inorganic insulation layer (21) and heat-conducting metal layer (22) successively, wherein, the thickness of described inorganic insulation layer (21) is 50-500 nm, the thickness of heat-conducting metal layer (22) is 50-500 nm, it is n that inorganic insulation layer (21) and heat-conducting metal layer (22) replace overlapping periodicity, 1≤n≤10;
The life-span of device and other parameters after the test package.
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