CN202651212U - Light emitting device - Google Patents
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- CN202651212U CN202651212U CN 201220342359 CN201220342359U CN202651212U CN 202651212 U CN202651212 U CN 202651212U CN 201220342359 CN201220342359 CN 201220342359 CN 201220342359 U CN201220342359 U CN 201220342359U CN 202651212 U CN202651212 U CN 202651212U
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Abstract
The embodiment of the utility model provides a light emitting device, which belongs to the technical field of photoelectric technology, and effectively improves the heat dissipation performance of the light emitting device, thereby prolonging the service life of the light emitting device. The light emitting device comprises a substrate provided with a light emitting part, a semiconductor thermoelectric refrigeration device integrated in the light emitting part and arranged on the light emitting part; wherein the semiconductor refrigeration part comprises a cold end and a hot end, the cold end is closed to the light emitting part, and the hot end is far away from the light emitting part. The light emitting device is used for various light emitting devices.
Description
Technical field
The utility model relates to field of photoelectric technology, relates in particular to a kind of luminescent device.
Background technology
Organic electroluminescent LED OLED (Organic Light-Emitting Diode) is considered to the optimal third generation Display Technique after lcd technology, has widely in every field such as flat panel display, illumination, display backlight sources and uses.
Organic material among the OLED, is easy to react with oxygen in case touch oxygen to oxygen sensitive, thereby makes the performance of OLED produce deterioration.In order to prevent this from occurring, in the prior art, normal operation glass coats the whole luminous component of OLED.Can avoid the organic material among the OLED to contact with oxygen although use glass to coat, but, owing to leave the slit between the glass of OLED itself and coating, and, glass itself is not allow transcalent material, and therefore, the heat that OLED energising work produces is not easy to conduct, easily cause OLED to cross cause thermal damage, affect the useful life of OLED.
The utility model content
Main purpose of the present utility model is, a kind of luminescent device is provided, and can effectively improve the heat dispersion of luminescent device, thereby prolongs the useful life of luminescent device.
For achieving the above object, the utility model adopts following technical scheme:
The utility model embodiment provides a kind of luminescent device, comprises substrate, is provided with illuminating part on the described substrate; Also be integrated with semiconductor thermoelectric refrigeration section in the described luminescent device, described semiconductor thermoelectric refrigeration section is arranged on the described illuminating part.
Concrete, described semiconductor thermoelectric refrigeration section comprises the first thermal insulation layer, semiconductor thermoelectric module layer and the second thermal insulation layer, described the first thermal insulation layer is arranged on the described illuminating part, described semiconductor thermoelectric module layer is arranged on described the first thermal insulation layer, and described the second thermal insulation layer is arranged on the described conductor thermoelectric pile layer; Be distributed with at least one semiconductor refrigerating unit in the described semiconductor thermoelectric module layer, each semiconductor refrigerating unit comprises metal bottom electrode, P type semiconductor, N type semiconductor and electrode of metal; Described metal bottom electrode is arranged on described the first thermal insulation layer; Described P type semiconductor and N type semiconductor are arranged on the described metal bottom electrode, and the bottom of described P type semiconductor is connected by described metal bottom electrode with the bottom of N type semiconductor; Described electrode of metal is arranged on the top of described P type semiconductor and the top of described N type semiconductor.
Optionally, described semiconductor thermoelectric refrigeration section comprises a plurality of semiconductor refrigeratings unit, and described a plurality of semiconductor refrigeratings unit is connected in series, is connected in parallel by described electrode of metal or connection in series-parallel is connected.
Further, in an embodiment of the present utility model, between the P type semiconductor and N type semiconductor of same described semiconductor refrigerating unit, and be provided with the insulation isolation part between the adjacent described semiconductor refrigerating unit.
In an embodiment of the present utility model, described luminescent device is organic electroluminescent LED OLED; Described illuminating part comprises anode layer, organic function layer and metal electrode layer; Described anode layer is arranged on the substrate, and described organic function layer is arranged on the described anode layer, and described metal electrode layer is arranged on the described organic function layer; Described the first thermal insulation layer is arranged on the described metal electrode layer.
Optionally, in an embodiment of the present utility model, the material of described P type semiconductor is selected from one or more the combination in the following material: bismuth telluride binary solid solution Bi
2Te
3-Sb
2Te
3, bismuth telluride ternary solid solution Bi
2Te
3-Sb
2Te
3-Sb
2Se
3, P type Ag
(1-x)Cu
(x)TiTe, the YBaCuO superconductor; The material of described N type semiconductor is selected from one or more the combination in the following material: bismuth telluride binary solid solution Bi
2Te
3-Bi
2Se
3, bismuth telluride ternary solid solution Bi
2Te
3-Sb
2Te3-Sb
2Se
3, N-type Bi-Sb alloy, YBaCuO superconductor.
Optionally, in an embodiment of the present utility model, the material of described electrode of metal is selected from a kind of in the following material: silver, copper, gold and aluminium, and described electrode of metal thickness is the 50-1000 nanometer; The material of described metal bottom electrode is selected from a kind of in the following material: silver, copper, gold and aluminium, the thickness of described metal bottom electrode are the 50-1000 nanometer.
Optionally, in an embodiment of the present utility model, the material of described the first thermal insulation layer is selected from a kind of in diamond like carbon, aluminium nitride, boron nitride, silicon nitride, alundum (Al2O3), the magnesium oxide, and the thickness of described the first thermal insulation layer is the 100-5000 nanometer; The material of described the second thermal insulation layer is selected from a kind of in diamond like carbon, aluminium nitride, boron nitride, silicon nitride, alundum (Al2O3), the magnesium oxide, and the thickness of described the second thermal insulation layer is the 100-5000 nanometer.The luminescent device that the utility model embodiment provides, be integrated with semiconductor thermoelectric refrigeration section in this luminescent device, this semiconductor thermoelectric refrigeration section utilizes the thermoelectric effect principle, when illuminating part is worked, absorb and discharge the heat that illuminating part produces, the temperature when reducing illuminating part work, therefore, can effectively improve the heat dispersion of luminescent device, thereby prolong the useful life of luminescent device.
Description of drawings
In order to be illustrated more clearly in the technical scheme of the utility model embodiment, the accompanying drawing of required use was done to introduce simply during the below will describe embodiment, apparently, accompanying drawing in the following describes only is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
A kind of structural representation of the luminescent device that Fig. 1 provides for an embodiment of the present utility model;
A kind of structural representation of the luminescent device that Fig. 2 provides for an embodiment of the present utility model;
In the luminescent device that Fig. 3 (a)-(c) provides for the utility model, the principle schematic of the connected mode of semiconductor refrigerating unit;
The structural representation of the luminescent device that Fig. 4 provides for an embodiment of the present utility model, this luminescent device is OLED.
Embodiment
Below in conjunction with accompanying drawing, the technical solution of the utility model is clearly and completely described, obviously, described embodiment only is a part of embodiment of the present utility model, rather than whole embodiment.Based on the embodiment in the utility model, all other embodiment that those of ordinary skills obtain under the prerequisite of not making creative work belong to the scope that the utility model is protected.
The utility model provides a kind of luminescent device, and as shown in Figure 1, the luminescent device that the utility model provides comprises substrate 1, is provided with illuminating part 2 on the substrate 1; Also be integrated with semiconductor thermoelectric refrigeration section 3 in the described luminescent device, semiconductor thermoelectric refrigeration section 3 is arranged on the described illuminating part 2.
Wherein, semiconductor thermoelectric refrigeration section 3 is a kind of based on peltier effect (being thermoelectric effect) principle, the parts that utilize semi-conductor thermoelectric material to freeze, it comprises cold junction 31 and hot junction 32, cold junction 31 is near illuminating part 2, be used for absorbing the heat that illuminating part 2 produces, and hot junction 32 is away from illuminating part 2, is used for discharging the heat that cold junction 31 absorbs.
Need to prove, the luminescent device that the utility model provides, semiconductor thermoelectric refrigeration section 3 is integrated in the luminescent device, and it directly prepares on illuminating part 2, can obtain good refrigeration.
The luminescent device that the utility model provides, when illuminating part 2 work, utilize semiconductor thermoelectric refrigeration section 3 to absorb and discharge the heat that illuminating part 2 produces, thereby the temperature when reducing illuminating part 2 work, therefore, can effectively improve the heat dispersion of this luminescent device, thereby prolong the useful life of luminescent device.
Concrete, in an embodiment of the present utility model, as shown in Figure 2, semiconductor thermoelectric refrigeration section 3 comprises the first thermal insulation layer 301, semiconductor thermoelectric module layer 302 and the second thermal insulation layer 303; The first thermal insulation layer 301 is arranged on the illuminating part 2, and semiconductor thermoelectric module layer 302 is arranged on the first thermal insulation layer 301, and the second thermal insulation layer 303 is arranged on the semiconductor thermoelectric module layer 302;
Wherein, be distributed with at least one semiconductor refrigerating unit 304 (shown in the dotted line frame) in the semiconductor thermoelectric module layer 302, each semiconductor refrigerating unit 304 comprises metal bottom electrode 3041, P type semiconductor 3042, N type semiconductor 3043 and electrode of metal 3044; Metal bottom electrode 3041 is arranged on the first thermal insulation layer 301, and P type semiconductor 3042 and N type semiconductor 3043 are arranged on the metal bottom electrode 3041, and electrode of metal 3044 is arranged on the top of P type semiconductor and the top of N type semiconductor.
Among the embodiment shown in Figure 2, the bottom of the P type semiconductor 3042 of same semiconductor refrigerating unit 304 is connected by metal bottom electrode 3041 with the bottom of N type semiconductor 3043; When being distributed with a plurality of semiconductor refrigeratings unit 304 in the semiconductor thermoelectric module layer 302, the connection that electrode of metal 3044 is used between the adjacent semiconductor refrigeration unit 304.
When direct current flowed to P type semiconductor 3044 by N type semiconductor 3043, based on peltier effect theory, N type semiconductor 3043 and the position heat absorption that metal bottom electrode 3041 and P type semiconductor 3042 contact with metal bottom electrode 3041 were called cold junction.N type semiconductor 3043 and the position heat release that electrode of metal 3044 and P type semiconductor 3042 contact with electrode of metal 3044 are called the hot junction.When light-emitting component shown in Figure 2 is worked, the heat that illuminating part 2 produces passes the first thermal insulation layer 301 and is passed to cold junction, cold junction will absorb this heat, and the hot junction discharges the heat that cold junction absorbs, and the heat that discharges passes the second thermal insulation layer 303 and is passed to the light-emitting component outside.
Preferably, in an embodiment of the present utility model, for the Effective Raise refrigeration, be distributed with a plurality of (more than two or two) semiconductor refrigerating unit 304 in the semiconductor thermoelectric module layer 302.This a plurality of semiconductor refrigeratings unit 304 can be array-like and distribute, and such as Fig. 3 (a) to shown in Fig. 3 (c), a plurality of semiconductor refrigeratings unit 304 can be connected in series, be connected in parallel or connection in series-parallel is connected forms the Multi-stage heat pile, the Multi-stage heat pile has enlarged the area in cold junction and hot junction, and refrigeration is better.The connection that present embodiment is realized between a plurality of semiconductor refrigeratings unit 304 by electrode of metal 3044.
Understandable, referring to Fig. 3 (a), a plurality of semiconductor refrigerating cell distribution are two row, and two row semiconductor refrigerating units in series connect, electric current is not all shunted by each semiconductor refrigerating unit, and the electric current of each refrigeration unit of flowing through all is to flow to P type semiconductor by N type semiconductor.Referring to Fig. 3 (b), a plurality of semiconductor refrigeratings unit is divided into two row, two row semiconductor refrigerating unit are connected in parallel, the two row semiconductor refrigerating unit of flowing through respectively behind the current distributing, and the electric current of each refrigeration unit of flowing through all is to flow to P type semiconductor by N type semiconductor.Referring to Fig. 3 (c), connection in series-parallel is connected and refers to both comprise that row and row are connected in series, and also comprises being connected in parallel of row and row.
Need to prove, Fig. 3 (a) only is the principle schematic diagram of the connection between a plurality of semiconductor refrigeratings unit 304 to Fig. 3 (c), the number and the connection of being connected that do not represent the semiconductor refrigerating unit of present embodiment, for example, every row semiconductor refrigerating unit can comprise one or more semiconductor refrigeratings unit, can be distributed with multiple row semiconductor refrigerating unit in the semiconductor thermoelectric module layer 302.Those skilled in the art can be according to the catenation principle of Fig. 3 (a) to Fig. 3 (c), select number and/or the columns of semiconductor refrigerating unit, and realize that by electrode of metal 3044 series, parallel or the connection in series-parallel of a plurality of semiconductor refrigeratings unit are connected, and repeat no more here.
Further alternative, in the present embodiment, between the P type semiconductor 3042 and N type semiconductor 3043 of same semiconductor refrigerating unit 304, and can be provided with insulation isolation part 305 between the adjacent semiconductor refrigeration unit 304, with the electric property of effective assurance semiconductor refrigerating unit 304.
In the present embodiment, the material of the first thermal insulation layer 301 and the second thermal insulation layer 302 can be identical also can be different, because both are used for the conduction heat, therefore, both materials are preferably the inorganic material of high heat conductance, optionally, the material of the first thermal insulation layer 301 and the second thermal insulation layer 302 all can be selected from a kind of in diamond like carbon, aluminium nitride, boron nitride, silicon nitride, alundum (Al2O3), the magnesium oxide.In addition, the material of the first thermal insulation layer 301 and the second thermal insulation layer 302 can be identical also can be different, optional, the thickness of described the first thermal insulation layer and the second thermal insulation layer 302 is the 100-5000 nanometer.
In the present embodiment, the material of P type semiconductor 3042 can be selected from one or more the combination in the following material: bismuth telluride binary solid solution Bi
2Te
3-Sb
2Te
3, bismuth telluride ternary solid solution Bi
2Te
3-Sb
2Te
3-Sb
2Se
3, P type Ag (1-x) Cu (x) Ti Te, YBaCuO superconductor.
In the present embodiment, the material of N type semiconductor 3043 can be selected from one or more the combination in the following material: bismuth telluride binary solid solution Bi
2Te
3-Bi
2Se
3, bismuth telluride ternary solid solution Bi
2Te
3-Sb
2Te
3-Sb
2Se
3, N-type Bi-Sb alloy, YBaCuO superconductor.
The bismuth telluride ternary solid solution has improved the energy gap of solid-solution material with respect to the bismuth telluride binary solid solution, can further reduce lattice thermal conductivity.
In the present embodiment, the material of electrode of metal 3044 and metal bottom electrode 3041 can be identical also can be different, all can be selected from a kind of in silver, copper, gold and the aluminium in the following material, and both thickness can be identical also can be different, for example all can be the 50-1000 nanometer.
Need to prove, the luminescent device that the utility model provides can be OLED, inorganic light-emitting diode, organic solar batteries, inorganic solar cell, OTFT, inorganic thin-film transistors and photo-detector etc., and the utility model is not done restriction to this.
For the luminescent device that better explanation the utility model provides, the below is specifically described take luminescent device as OLED as example.
As shown in Figure 4, luminescent device OLED comprises substrate 1, is provided with illuminating part 2 on the substrate 1, is provided with semiconductor thermoelectric refrigeration section 3 on the illuminating part 2; Wherein, illuminating part 2 comprises anode layer 20, organic function layer 21 and metal electrode layer 22, and anode layer 20 is arranged on the substrate 1, and organic function layer 21 is arranged on the anode layer 20, and metal electrode layer 22 is arranged on the organic function layer 21; The structure of semiconductor thermoelectric refrigeration section 3 repeats no more here with embodiment illustrated in fig. 2 identical, and wherein the first thermal insulation layer 301 is arranged on the metal electrode layer 22.
Wherein, substrate 1 has good light transmission in the visible region, the ability of certain anti-steam and oxygen infiltration is arranged, and preferably profile pattern is arranged, it can be glass or flexible substrate, a kind of material in flexible substrate employing polyesters, the poly-phthalimide compound or thinner metal.
Embodiment 1
The OLED of present embodiment, as shown in Figure 4, anode layer 20 is the ITO layer, metal electrode layer 22 is the Mg:Ag alloy-layer, the first thermal insulation layer 301 and the second thermal insulation layer 303 are the diamond like carbon layer, and thickness is 500nm, and the material of electrode of metal 3044 and metal bottom electrode 3041 is Al, thickness is 1000nm, and P type semiconductor 3042 is Bi
2Te
3-Sb
2Te
3, N type semiconductor 3043 is Bi
2Te
3-Bi
2Se
3, thickness is 1500nm.
The manufacture method of this OLED may further comprise the steps:
1, on substrate 1, prepares successively anode layer 20, organic function layer 21 and metal electrode layer 22, to finish the preparation of illuminating part 2.
2, adopt the Vacuum Magnetic filtering technique, the substrate 1 that is prepared with anode layer 20, organic function layer 21 and metal electrode layer 22 is applied the low frequencies periodic back bias voltage, under the room temperature, depositing diamond-like film on metal electrode layer 22 (the first thermal insulation layer 301).
Concrete, prepare in the filtered cathode arc plasma equipment of this diamond like carbon film, adopt high purity graphite as negative electrode, the base vacuum of vacuum chamber is 10
-3About Pa, arc current 70A, arc voltage 20V filters field supply 20A, the magnetic field that can produce 40mT, the high-purity argon gas of use 99.999% is as working gas, gas flow is controlled at 1.5sccm, periodic bias be (0 ,-50V), sedimentation time is 60min, and substrate 1 is 30cm with the distance of high purity graphite negative electrode.
The thickness of the diamond like carbon film of this step preparation is 500nm, and surface compact is smooth, and surface roughness is less than 1nm.
3, on the diamond like carbon film of step 2 preparation, use the shade processing procedure, by the thermal conductivity high Al metal array (a plurality of metal bottom electrode 3041) of magnetron sputtering method in the densification of diamond like carbon film preparation one deck.
This Al metal array is used for connecting P type semiconductor and the N type semiconductor of each semiconductor refrigerating unit 304.
4, on the Al metal array of step 3 preparation, use the shade processing procedure, prepare P type semiconductor array (a plurality of P type semiconductor 3042) by radio-frequency magnetron sputter method.
Wherein, the target of rf magnetron sputtering is binary solid solution alloy B i
2Te
3-Sb
2Te
3, sputtering power is 100W, and sputtering pressure is 3Pa (Ar air pressure), and sputtering time is 60min, and thicknesses of layers is 1500nm.
5, on the Al metal array of step 3 preparation, use the shade processing procedure, prepare N type semiconductor array (a plurality of N type semiconductor 3042) by radio-frequency magnetron sputter method.
Wherein, the target of rf magnetron sputtering is binary solid solution alloy B i
2Te
3-Bi
2Se
3, sputtering power is 120W, and sputtering pressure is 2Pa (Ar air pressure), and sputtering time is 40min, and thicknesses of layers is 1500nm.
6, use the shade processing procedure and prepare the diamond-film-like matrix, with in the P type semiconductor of same semiconductor refrigerating unit 304 and N type semiconductor gap and form the isolation part of insulating between the adjacent semiconductor refrigeration unit 304.
In this step, the technological parameter that adopts can be identical with step 2, and those skilled in the art also can select other technological parameter certainly, repeat no more here.
7, use the shade processing procedure, prepare Al metal array (a plurality of electrode of metal 3044) by magnetron sputtering method at P type semiconductor array and N type semiconductor array.
This Al metal array is used for connecting the adjacent semiconductor of adjacent semiconductor refrigeration unit 304, so that a plurality of semiconductor refrigeratings unit 304 is connected in series, is connected in parallel or connection in series-parallel is connected.
8, on the Al metal array of step 7 preparation, preparation diamond like carbon film (the second thermal insulation layer 303).
In this step, the technological parameter that adopts is identical with step 2, repeats no more here.
Further, in order to strengthen sealing effectiveness, step 7 and 8 can repeatedly repeat, form multilayer complex films sealing structure layer, namely can continue on the diamond-film-like of step 8 preparation, to prepare by magnetron sputtering the higher Al metal level of thermal conductivity of one deck densification, jointly form sealant with diamond-film-like, intercept water oxygen to the infringement of OLED device, can also increase the toughness of compound seal layer simultaneously.In order to protect the metal level of preparation, on metal level, prepare again one deck diamond-film-like, circulate repeatedly with this, form multilayer complex films sealing structure layer.
The luminescent device OLED of present embodiment, as shown in Figure 4, anode layer 20 is the ITO layer, metal electrode layer 22 is the Mg:Ag alloy, the first thermal insulation layer 301 and the second thermal insulation layer 303 are aln layer, and thickness is 500nm, and the material of electrode of metal 3044 and metal bottom electrode 3041 is Al, thickness is 1000nm, and P type semiconductor 3042 is Bi
2Te
3-Sb
2Te
3, N type semiconductor 3043 is Bi
2Te
3-Bi
2Se
3, thickness is 1500nm.
The manufacture method of this OLED may further comprise the steps:
1, on substrate 1, prepares successively anode layer 20, organic function layer 21 and metal electrode layer 22, to finish the preparation of illuminating part 2.
2, adopt radio frequency reaction magnetron sputtering growing aluminum nitride film (the first thermal insulation layer 301) on metal electrode layer 22.
Concrete, in the magnetron sputtering apparatus, vacuum is 3 * 10 in the work chamber
-4Pa, sputtering target material are 99.99% Al target, and working gas is 99.99% Ar and 99.99% N
2, remain Ar and N in the technical process
2Voltage ratio is 24: 4, target-substrate distance 7.0cm, and 20 ℃ of the temperature of substrate 1 (room temperature), power is 40W, sputtering time is 60min.
In addition, preferred, before sputter-deposited thin films, first with the power of 30W to the pre-sputter 15min of target, to remove the impurity such as oxide of Al target material surface.
3, use the shade processing procedure, by the thermal conductivity high Al metal array (a plurality of metal bottom electrode 3041) of magnetron sputtering method in aluminium nitride film preparation one deck densification of step 2 preparation.
4, on the Al metal array of step 3 preparation, use the shade processing procedure, prepare P type semiconductor array (a plurality of P type semiconductor 3042) by radio-frequency magnetron sputter method.
Wherein, the target of rf magnetron sputtering is binary solid solution alloy B i
2Te
3-Sb
2Te
3, sputtering power is 100W, and sputtering pressure is 3Pa (Ar air pressure), and sputtering time is 60min, and thicknesses of layers is 1500nm.
5, on the Al metal array of step 3 preparation, use the shade processing procedure, prepare N type semiconductor array (a plurality of N type semiconductor 3042) by radio-frequency magnetron sputter method.
Wherein, the target of rf magnetron sputtering is binary solid solution alloy B i
2Te
3-Bi
2Se
3, wherein sputtering power is 120W, and sputtering pressure is 2Pa (Ar air pressure), and sputtering time is 40min, and thicknesses of layers is 1500nm.
6, use the shade processing procedure and prepare the aluminium nitride film matrix, with in the P type semiconductor of same semiconductor refrigerating unit 304 and N type semiconductor gap and form the isolation part of insulating between the adjacent semiconductor refrigeration unit 304.
In this step, the technological parameter that adopts is identical with step 2, and those skilled in the art also can select other technological parameter certainly, repeat no more here.
7, use the shade processing procedure, prepare Al metal array (a plurality of electrode of metal 3044) by magnetron sputtering method at P type semiconductor array and N type semiconductor array.
8, on the Al metal array of step 7 preparation, preparation aluminium nitride film (the second thermal insulation layer 303).
In this step, the technological parameter that adopts is identical with step 2, repeats no more here.
With embodiment one, step 7 and 8 can repeatedly be cycled to repeat carries out, to form multilayer complex films sealing structure layer.
Embodiment 3
The luminescent device OLED of present embodiment, as shown in Figure 4, anode layer 20 is the ITO layer, metal electrode layer 22 is the Mg:Ag alloy-layer, the first thermal insulation layer 301 and the second thermal insulation layer 303 are alumina layer, and thickness is 500nm, and the material of electrode of metal 3044 and metal bottom electrode 3041 is Al, thickness is 1000nm, and P type semiconductor 3042 is Bi
2Te
3-Sb
2Te
3, N type semiconductor 3043 is Bi
2Te
3-Bi
2Se
3, thickness is 1500nm.
The manufacture method of this OLED may further comprise the steps:
1, on substrate 1, prepares successively anode layer 20, organic function layer 21 and metal electrode layer 22, to finish the preparation of illuminating part 2.
2, on metal electrode layer 22, adopt the radio frequency magnetron reactive sputtering to prepare aluminum oxide film.
Concrete, take high-purity Al as target, with high-purity O
2Be reacting gas, radio-frequency power is 200W, and sputtering pressure is 0.5Pa, and target-substrate distance is 70mm, O
2Throughput is 1.0sccm, and the Ar throughput is 10.0sccm, and substrate temperature is room temperature, and deposit film thickness is 500nm.
3, on the pellumina of step 2 preparation, prepare again the high Ag metal level of thermal conductivity of one deck densification by magnetron sputtering, jointly form sealant with aluminium oxide, intercept water oxygen to the infringement of OLED device, can also increase the toughness of compound seal layer simultaneously.
In order to strengthen sealing effectiveness, step 3 and 4 can repeatedly repeat, and forms multilayer complex films sealing structure layer (the first thermal insulation layer 301).
4, on the multilayer complex films encapsulated layer, use the array (a plurality of metal bottom electrode 3041) that shade (shadow mask) processing procedure prepares the high Al metal of thermal conductivity of one deck densification by magnetron sputtering method.
5, on the Al metal array of step 4 preparation, use the shade processing procedure, prepare P type semiconductor array (a plurality of P type semiconductor 3042) by radio-frequency magnetron sputter method.
Wherein, the target of rf magnetron sputtering is binary solid solution alloy B i
2Te
3-Sb
2Te
3, wherein sputtering power is 100W, and sputtering pressure is 3Pa (Ar air pressure), and sputtering time is 60min, and thicknesses of layers is 1500nm.
6, on the Al metal array of step 4 preparation, use the shade processing procedure, prepare N type semiconductor array (a plurality of N type semiconductor 3042) by radio-frequency magnetron sputter method.
Target is binary solid solution alloy B i
2Te
3-Bi
2Se
3, wherein sputtering power is 120W, and sputtering pressure is 2Pa (Ar air pressure), and sputtering time is 40min, and thicknesses of layers is 1500nm.
7, use the shade processing procedure and prepare the pellumina matrix, with in the P type semiconductor of same semiconductor refrigerating unit 304 and N type semiconductor gap and form the isolation part of insulating between the adjacent semiconductor refrigeration unit 304.
In this step, the technological parameter that adopts can be identical with step 2, repeats no more here.
8, use the shade processing procedure, prepare Al metal array (a plurality of electrode of metal 3044) by magnetron sputtering method at P type semiconductor array and N type semiconductor array.
9, on the Al metal array of step 8 preparation, preparation aluminum oxide film (the second thermal insulation layer 303).
In this step, the technological parameter that adopts is identical with step 2, repeats no more here.
10, use the metal forming packaging.
Embodiment 4
The OLED of present embodiment, as shown in Figure 4, anode layer 20 is the ITO layer, metal electrode layer 22 is the Mg:Ag alloy-layer, the first thermal insulation layer 301 and the second thermal insulation layer 303 are the diamond like carbon layer, and thickness is 500nm, and the material of electrode of metal 3044 and metal bottom electrode 3041 is Al, thickness is 1000nm, and P type semiconductor 3042 is ternary solid solution Bi
2Te
3-Sb
2Te
3-Sb
2Se
3, N type semiconductor 3043 is ternary solid solution Bi
2Te
3-Sb
2Te
3-Sb
2Se
3, thickness is 1500nm.
The preparation method is similar to embodiment 3, and different is the material of preparation P type semiconductor 3042 and N type semiconductor 3043, repeats no more here.
Comparative Examples 1
Be not integrated with the OLED of semiconductor thermoelectric refrigeration section, and illuminating part adopts the method identical with previous embodiment 1 to 3 to prepare.
Performance test
To embodiment 1,2,3,4 and Comparative Examples 1 carry out working temperature and life test, the test result that draws as shown in Table 1:
Table one:
Can be found out by table one, the OLED that the utility model provides, working temperature is lower, and the life-span is longer, namely can effectively improve the heat dispersion of luminescent device, thereby prolongs the useful life of luminescent device.
The above; it only is embodiment of the present utility model; but protection range of the present utility model is not limited to this; anyly be familiar with those skilled in the art in the technical scope that the utility model discloses; can expect easily changing or replacing, all should be encompassed within the protection range of the present utility model.Therefore, protection range of the present utility model should be as the criterion with the protection range of claim.
Claims (8)
1. a luminescent device comprises substrate, is provided with illuminating part on the described substrate, it is characterized in that,
Also be integrated with semiconductor thermoelectric refrigeration section in the described luminescent device, described semiconductor thermoelectric refrigeration section is arranged on the described illuminating part;
Described semiconductor refrigerating section comprises cold junction and hot junction, and described cold junction is near described illuminating part, and described hot junction is away from described illuminating part.
2. luminescent device according to claim 1 is characterized in that,
Described semiconductor thermoelectric refrigeration section comprises the first thermal insulation layer, semiconductor thermoelectric module layer and the second thermal insulation layer, described the first thermal insulation layer is arranged on the described illuminating part, described semiconductor thermoelectric module layer is arranged on described the first thermal insulation layer, and described the second thermal insulation layer is arranged on the described conductor thermoelectric pile layer;
Be distributed with at least one semiconductor refrigerating unit in the described semiconductor thermoelectric module layer, each semiconductor refrigerating unit comprises metal bottom electrode, P type semiconductor, N type semiconductor and electrode of metal;
Described metal bottom electrode is arranged on described the first thermal insulation layer;
Described P type semiconductor and N type semiconductor are arranged on the described metal bottom electrode, and the bottom of described P type semiconductor is connected by described metal bottom electrode with the bottom of N type semiconductor;
Described electrode of metal is arranged on the top of described P type semiconductor and the top of described N type semiconductor.
3. luminescent device according to claim 2 is characterized in that,
Described semiconductor thermoelectric refrigeration section comprises a plurality of semiconductor refrigeratings unit;
Described a plurality of semiconductor refrigeratings unit is connected in series, is connected in parallel by described electrode of metal or connection in series-parallel is connected.
4. luminescent device according to claim 2 is characterized in that, between the P type semiconductor and N type semiconductor of same described semiconductor refrigerating unit, and is provided with the insulation isolation part between the adjacent described semiconductor refrigerating unit.
5. luminescent device according to claim 2 is characterized in that,
Described luminescent device is organic electroluminescent LED OLED;
Described illuminating part comprises anode layer, organic function layer and metal electrode layer;
Described anode layer is arranged on the substrate, and described organic function layer is arranged on the described anode layer, and described metal electrode layer is arranged on the described organic function layer;
Described the first thermal insulation layer is arranged on the described metal electrode layer.
6. according to claim 2 to 5 each described luminescent devices, it is characterized in that,
The material of described P type semiconductor is selected from one or more the combination in the following material:
Bismuth telluride binary solid solution Bi
2Te
3-Sb
2Te
3, bismuth telluride ternary solid solution Bi
2Te
3-Sb
2Te
3-Sb
2Se
3, P type Ag
(1-x)Cu
(x)Ti Te, the YBaCuO superconductor;
The material of described N type semiconductor is selected from one or more the combination in the following material:
Bismuth telluride binary solid solution Bi
2Te
3-Bi
2Se
3, bismuth telluride ternary solid solution Bi
2Te
3-Sb
2Te
3-Sb
2Se
3, N-type Bi-Sb alloy, YBaCuO superconductor.
7. according to claim 2 to 5 each described luminescent devices, it is characterized in that,
The material of described electrode of metal is selected from a kind of in the following material: silver, copper, gold and aluminium, and described electrode of metal thickness is the 50-1000 nanometer;
The material of described metal bottom electrode is selected from a kind of in the following material: silver, copper, gold and aluminium, the thickness of described metal bottom electrode are the 50-1000 nanometer.
8. according to claim 4 or 5 described luminescent devices, it is characterized in that,
The material of described the first thermal insulation layer is selected from a kind of in diamond like carbon, aluminium nitride, boron nitride, silicon nitride, alundum (Al2O3), the magnesium oxide, and the thickness of described the first thermal insulation layer is the 100-5000 nanometer;
The material of described the second thermal insulation layer is selected from a kind of in diamond like carbon, aluminium nitride, boron nitride, silicon nitride, alundum (Al2O3), the magnesium oxide, and the thickness of described the second thermal insulation layer is the 100-5000 nanometer.
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US11508943B2 (en) | 2018-05-09 | 2022-11-22 | Beijing Boe Technology Development Co., Ltd. | Pixel circuit, display panel, and temperature compensation method for display panel |
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