CN102298434A - System on chip - Google Patents
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- CN102298434A CN102298434A CN201010217873XA CN201010217873A CN102298434A CN 102298434 A CN102298434 A CN 102298434A CN 201010217873X A CN201010217873X A CN 201010217873XA CN 201010217873 A CN201010217873 A CN 201010217873A CN 102298434 A CN102298434 A CN 102298434A
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Abstract
The invention provides a system on chip, comprising a logic module, a storage module and a first reference voltage source. The logic module is used for operating the storage module, and the first reference voltage source is used for providing reference voltage for the logic module. The system on chip is characterized by further comprising a second reference voltage source for providing reference voltage for the storage module, so that working performance of the storage module of the system on chip can be improved.
Description
Technical field
The present invention relates to integrated circuit fields, particularly a kind of SOC (system on a chip).
Background technology
SOC (System on Chip) is called SOC (system on a chip), is meant an integrated circuit that application-specific target is arranged, and wherein comprises holonomic system, and the full content of embedded software.SOC can comprise system level chip control logic module, CPU core module, DSP module, memory module (memory), with the outside carry out communication interface module, ADC (analog to digital conversion)/DAC (digital-to-analog conversion) analog front-end module, power module, power managed module and the reference voltage source (VoltageReference) of reference voltage is provided for other module, also have radio-frequency module, user definition logic module and microelectron-mechanical module for wireless SOC, the SOC chip also needs to be embedded with user software that basic software modules maybe can be written into etc.In application number is 200610031082.1 Chinese patent literature, a kind of SOC of embedded memory module is disclosed for example.
Reference voltage source is the voltage source as the high stability that produces reference voltage in SOC, continuous increase along with the integrated circuit scale, especially the development of SOC, reference voltage source also become on a large scale, indispensable basic circuit module in VLSI (very large scale integrated circuit) and the nearly all digital simulator system.In many integrated circuit,, all need voltage reference as digital to analog converter (DAC), analog to digital converter (ADC), linear voltage regulator and switching regulator.In digital to analog converter, DAC utilizes the DC reference voltage to produce simulation output according to the digital input signals that is presented on its input end; In analog to digital converter, the dc voltage benchmark is used from analog input signal one again and produces digitized output signal.A kind of reference voltage source commonly used at present is: band-gap reference reference source (BGR, bandgap reference).
In existing SOC, reference voltage source is not set separately usually for memory module, thereby memory module needs and other module for example radio-frequency module or logic module common reference voltage source, but the problem that exists like this is to make that the serviceability of memory module is relatively poor.
Summary of the invention
The problem that the present invention solves provides a kind of SOC (system on a chip), thereby improves the serviceability of memory module in the SOC (system on a chip).
In order to address the above problem, the invention provides a kind of SOC (system on a chip), comprise logic module, memory module and first reference voltage source, described logic module is used for described memory module is operated, described first reference voltage source is used to logic module that reference voltage is provided, also comprise second reference voltage source, second reference voltage source is used to memory module that reference voltage is provided.
Preferably, described first reference voltage source, second reference voltage source are the band-gap reference reference source.
Preferably, also comprise radio-frequency module and the 3rd reference voltage source, described radio-frequency module is used to receive and dispatch radiofrequency signal and is connected with described logic module, and described the 3rd reference voltage source is used to radio-frequency module that reference voltage is provided.
Preferably, described the 3rd reference voltage source is the band-gap reference reference source.
Preferably, the degree of accuracy of described second reference voltage source is higher than the degree of accuracy of the 3rd reference voltage source.
Preferably, the degree of accuracy of described second reference voltage source is higher than the degree of accuracy of the 3rd reference voltage source and the degree of accuracy of first reference voltage source.
Preferably, described memory module is at least two, and described second reference voltage source is at least two, and described memory module and described second reference voltage source connect one to one.
Preferably, the degree of accuracy of described second reference voltage source is higher than the degree of accuracy of first reference voltage source.
Compared with prior art, the present invention mainly has the following advantages:
The present invention also is provided with reference voltage source for memory module in addition except the reference voltage source that is set to logic module and provides reference voltage in SOC, thereby can require, reference voltage source is set for the degree of accuracy of reference voltage according to memory module for the requirement of temperature coefficient and for the requirement of reference voltage value, thereby make memory module not need and other module common reference voltage sources, improve the degree of accuracy of memory module like this, improved the serviceability of SOC.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by physical size equal proportion convergent-divergent.
Fig. 1 is the structural representation of a kind of SOC of the present invention;
Fig. 2 is the circuit diagram of first reference voltage source, one embodiment among the SOC shown in Figure 1;
Fig. 3 is the circuit diagram of second reference voltage source, one embodiment among the SOC shown in Figure 1;
Fig. 4 is the circuit diagram of second another embodiment of reference voltage source among the SOC shown in Figure 1.
Embodiment
By background technology as can be known, in existing SOC, reference voltage source is not set separately usually for memory module, thereby memory module needs and other module be radio-frequency module or logic module common reference voltage source for example, but, the present inventor thinks through a large amount of research: the logic module among the SOC, radio-frequency module, memory module or the like is to the demand difference of reference voltage degree of accuracy, for example logic module is lower for the requirement of reference voltage source degree of accuracy, and radio frequency is had relatively high expectations for the degree of accuracy of reference voltage source, memory module is then higher to the requirement of reference voltage source, yet in existing SOC in order to save area, reference voltage source is not set separately for memory module, therefore the reference voltage source that memory module can only shared other module, the inventor finds that under study for action memory device requires very high to the degree of accuracy of reference voltage source, often can not satisfy the demand of memory module like this according to the reference voltage source of the Demand Design of other modules, and memory module and the needed reference voltage value of other modules have difference, the requirement of temperature coefficient is also different, therefore just cause the poor-performing of the work of memory module like this, to such an extent as to the serviceability of whole SOC is relatively poor.
Therefore inventor's research has obtained a kind of SOC, comprise logic module, memory module and first reference voltage source and second reference voltage source, described logic module is used for described memory module is operated, described first reference voltage source is used to logic module that reference voltage is provided, and second reference voltage source is used to memory module that reference voltage is provided.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, specific implementation of the present invention is described in detail below in conjunction with accompanying drawing.The present invention utilizes synoptic diagram to be described in detail; when the embodiment of the invention was described in detail in detail, for ease of explanation, the sectional view of expression device architecture can be disobeyed general ratio and be done local the amplification; and described synoptic diagram is example, and it should not limit the scope of protection of the invention at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Fig. 1 is a SOC structural representation of the present invention, for the ease of clearly demonstrating, has omitted the module little with relation of the present invention in Fig. 1.As shown in Figure 1, this SOC100, comprise logic module 101, memory module 103 and first reference voltage source 105 and second reference voltage source 107, described first reference voltage source 105 is used to logic module 101 that reference voltage is provided, and second reference voltage source 107 is used to memory module 103 that reference voltage is provided.Wherein first reference voltage source 105 can be the reference voltage source that offers reference voltages such as radio-frequency module or logic module well known to those skilled in the art.Described logic module 101 can be control logic module, CPU module or DSP module etc.
Preferably, described SOC100 can also comprise radio-frequency module 109 and the 3rd reference voltage source 111, described radio-frequency module 109 is used to receive and dispatch radiofrequency signal and is connected with described logic module 101, particularly, described radio-frequency module 109 sends radiofrequency signal by described logic module 101 controls to other equipment, and, described radio-frequency module 109 is from other equipment received RF signals and transmit described logic module 101 and handle, and described the 3rd reference voltage source 111 is used to radio-frequency module 109 that reference voltage is provided.All different for the demand of the degree of accuracy of reference voltage source and reference voltage level for radio-frequency module 109, logic module 101 and memory module 103, the inventor is found to be different modules under study for action provides the different reference voltage sources can be so that the degree of accuracy of SOC is higher.
Preferably, described first reference voltage source 105, second reference voltage source 107 and the 3rd reference voltage source 111 can be the band-gap reference reference source, because band-gap reference reference source good stability, therefore can be so that the performance of SOC is more stable.
Preferably, described SOC100 can comprise at least two memory modules 103 and at least two second reference voltage sources 107 that are electrically connected with memory module 103 respectively, described second reference voltage source 107 can design according to the real needs of the memory module 103 that is electrically connected with it, thereby different memory module 103 can be used the second different reference voltage sources 107, the further like this performance that improves SOC.Certainly, at other embodiment, a plurality of memory modules also can shared one second reference voltage source.
In addition, above-mentioned SOC100 can also comprise other module, the for example outside interface module of communication, analog front-end module, power module, power managed module, user definition logic module and microelectron-mechanical module of ADC (analog to digital conversion)/DAC (digital-to-analog conversion) or the like of carrying out, the SOC chip also needs to be embedded with user software that basic software modules maybe can be written into etc. in addition, also can be for the module that needs reference voltage separately for it provide reference voltage source, can the common reference voltage source for the less demanding module of reference voltage degree of accuracy.Therefore the module that comprises for above-mentioned SOC is not elaborated in an embodiment of the present invention because little with relation of the present invention.
Preferably, because logic module, radio-frequency module and memory module require different for the degree of accuracy of reference voltage, usually memory module is the highest for the degree of accuracy requirement of reference voltage, and the degree of accuracy that therefore second reference voltage source can be set is higher than the degree of accuracy of the 3rd reference voltage source; Or the degree of accuracy of second reference voltage source is higher than the degree of accuracy of first reference voltage source; Or the degree of accuracy of second reference voltage source is higher than the degree of accuracy of the 3rd reference voltage source and the degree of accuracy of the 3rd reference voltage source; Or the degree of accuracy of second reference voltage source is higher than the degree of accuracy of the 3rd reference voltage source, and the degree of accuracy of the 3rd reference voltage source is higher than the degree of accuracy of first reference voltage source.Can provide different reference voltage sources according to different degree of accuracy like this, can the common reference voltage source or provide degree of accuracy lower reference voltage source for the less demanding module of degree of accuracy, saved resource like this, reduced cost.
In a specific implementation, described first reference voltage source can be band-gap reference reference source as shown in Figure 2, comprises error amplifier A, PMOS control tube M1, PMOS efferent duct M2, controlling resistance R4 and R5, output resistance R6 and band gap current generating circuit.Wherein, the grid of control tube M1 is connected with the grid of efferent duct M2, and is connected with the output terminal of error amplifier A, and source electrode and the substrate of control tube M1 and efferent duct M2 all are connected on the power supply, supply voltage is VDD, and the drain electrode of efferent duct M2 is connected on the end of output resistance R6; The end of controlling resistance R4 and R5 is connected with control tube M1 drain electrode, and the other end of resistance R 4 and R5 is connected on positive and negative input end VB and the VA of error amplifier A respectively; The electric current of control tube M1 flows to the band gap current generating circuit by two controlling resistance R4 and R5: described band gap current generating circuit is by 3 resistance R 1, R2, and R3 and 2 triode Q1 and Q2 constitute.Wherein, resistance R 1 and R2 have a common end grounding; The other end connects negative input end VA and the positive input terminal VB of error amplifier A respectively; Resistance R 3 one ends are connected the positive input terminal VB of error amplifier A, and the other end is connected on the emitter of triode Q2; Triode Q1 can be connected as the diode use with Q2, and concrete method of attachment is well known to those skilled in the art.The drain electrode of efferent duct M2 is an output terminal, and output offers the reference voltage V BG of logic module 101.
Described second reference voltage source 107 can be the voltage source according to the Demand Design of memory module 103, and for example described second reference voltage source can be band-gap reference reference source as shown in Figure 3.As shown in Figure 3, the band-gap reference reference source comprises: bias-voltage generating circuit 120 and operational amplification circuit 130, wherein bias-voltage generating circuit 120 is used for providing bias voltage to operational amplification circuit 130, operational amplification circuit 130 is used for output reference voltage Vref, and reference voltage Vref offers memory module 103 as reference voltage.Bias-voltage generating circuit 120 comprises difference input circuit 140, difference input circuit 140 comprises the current source that the 3rd PMOS pipe P3 and the 4th PMOS pipe P4 form, and difference input circuit 140 also comprises the first difference MOS unit 140a and the second difference MOS unit 140b.Wherein, the substrate of the 3rd PMOS pipe P3 connects high level (Vdd), the source electrode of the 3rd PMOS pipe P3 connects high level (Vdd), the drain and gate of the 3rd PMOS pipe P3 connects the drain electrode of the first difference MOS unit 140a of difference input circuit 140, the substrate of the first difference MOS unit 140a connects low level (Gnd), the grid of the first difference MOS unit 140a connects the input end of difference input circuit, the source electrode of the first difference MOS unit 140a connects the drain electrode of load NMOS pipe N1, the substrate of load NMOS pipe N1 connects low level (Gnd), the source electrode of load NMOS pipe N1 connects low level (Gnd), the gate input voltage of load NMOS pipe N1.
The substrate of the 4th PMOS pipe P4 connects high level (Vdd), the grid of the 4th PMOS pipe P4 connects the grid of the 3rd PMOS pipe P3, the source electrode of the 4th PMOS pipe P4 connects high level (Vdd), the drain electrode of the drain electrode of the 4th PMOS pipe P4 and the second difference MOS unit 140b of difference input circuit 140 connects the output terminal of bias voltage circuit, the substrate of the second difference MOS unit 140b connects low level (Gnd), the grid of the second difference MOS unit 140b connects the input end of difference input circuit, and the source electrode of the second difference MOS unit 140b connects the drain electrode of load NMOS pipe N1.
Wherein, the described first difference MOS unit 140a and the second difference MOS unit 140b can be for splitting the grid structure.Thereby can programme to the floating boom transistor among the first difference MOS unit 140a and the second difference MOS unit 140b, adjust its threshold voltage, thereby make that the first incomplete same difference MOS unit 140a of parameter is identical with the drift that the second difference MOS unit 140b takes place when being subjected to external disturbance, thereby can offset, make the voltage drift of bias-voltage generating circuit 120 outputs reduce, thereby the output of voltage reference circuit is subjected to external disturbance little, the degree of accuracy height.
Bias-voltage generating circuit 120 can also comprise start-up circuit 110.
In another embodiment, described second reference voltage source also can be the reference voltage source that offers the memory module reference voltage well known to those skilled in the art.For example described second reference voltage source can be band-gap reference reference source as shown in Figure 4.As shown in Figure 4, band-gap reference reference source 600 comprises respectively with a plurality of PMOS transistors 602 and 603, a plurality of nmos pass transistor 611 and 612, a plurality of pnp bipolar junction transistor 621 and 622 and resistor 631.Bandgap reference generator 600 also comprises the bias control circuit 640 that is connected to PMOS transistor 603.Bias control circuit 640 comprises impact damper 641 and a plurality of resistor 642 and 643.Impact damper 641 provides the high impedance input from the drain electrode of PMOS transistor 603. Resistor 642 and 643 series connections are between the output and ground of impact damper 641, so that the voltage divider between resistor 642 and 643 to be provided, the grid that is used for bias PMOS transistor 602 and 603 current mirrors that form, the drain electrode output reference voltage Vref of PMOS transistor 603.
The circuit structure of the 3rd reference voltage source can be identical with the circuit structure of first reference voltage source, the accuracy of the first above-mentioned reference voltage source will be lower than second reference voltage source, because memory module requires to be higher than other module to the accuracy of reference voltage, therefore above-mentioned circuit structure makes that the serviceability of memory module is better among the SOC, thereby makes that the serviceability of SOC is better.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Any those of ordinary skill in the art, do not breaking away under the technical solution of the present invention scope situation, all can utilize the method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the scope of technical solution of the present invention protection any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (8)
1. SOC (system on a chip), comprise logic module, memory module and first reference voltage source, described logic module is used for described memory module is operated, described first reference voltage source is used to logic module that reference voltage is provided, it is characterized in that, also comprise second reference voltage source, second reference voltage source is used to memory module that reference voltage is provided.
2. SOC (system on a chip) according to claim 1 is characterized in that, described first reference voltage source, second reference voltage source are the band-gap reference reference source.
3. SOC (system on a chip) according to claim 1 and 2, it is characterized in that, also comprise radio-frequency module and the 3rd reference voltage source, described radio-frequency module is used to receive and dispatch radiofrequency signal and is connected with described logic module, and described the 3rd reference voltage source is used to radio-frequency module that reference voltage is provided.
4. SOC (system on a chip) according to claim 3 is characterized in that, described the 3rd reference voltage source is the band-gap reference reference source.
5. SOC (system on a chip) according to claim 4 is characterized in that the degree of accuracy of described second reference voltage source is higher than the degree of accuracy of the 3rd reference voltage source.
6. SOC (system on a chip) according to claim 4 is characterized in that, the degree of accuracy of described second reference voltage source is higher than the degree of accuracy of the 3rd reference voltage source and the degree of accuracy of first reference voltage source.
7. SOC (system on a chip) according to claim 1 is characterized in that, described memory module is at least two, and described second reference voltage source is at least two, and described memory module and described second reference voltage source connect one to one.
8. SOC (system on a chip) according to claim 1 is characterized in that the degree of accuracy of described second reference voltage source is higher than the degree of accuracy of first reference voltage source.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113485504A (en) * | 2021-07-05 | 2021-10-08 | 珠海亿智电子科技有限公司 | Voltage reference circuit and circuit board with same |
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| CN1732418A (en) * | 2003-01-17 | 2006-02-08 | 飞思卡尔半导体公司 | Power management system |
| US7164307B2 (en) * | 2005-01-21 | 2007-01-16 | Intel Corporation | Bias generator for body bias |
| US20070113106A1 (en) * | 2005-11-17 | 2007-05-17 | Lin-Shih Liu | Volatile memory elements with boosted output voltages for programmable logic device integrated circuits |
| CN101393466A (en) * | 2008-10-30 | 2009-03-25 | 上海交通大学 | Totally- integrated low noise power supply system in chip of radio frequency receiver |
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| CN1120243A (en) * | 1993-12-17 | 1996-04-10 | 株式会社日立制作所 | Semiconductor intefgrated circuit device |
| CN1643479A (en) * | 2002-04-04 | 2005-07-20 | 松下电器产业株式会社 | Multiple power source semiconductor integrated circuit |
| CN1732418A (en) * | 2003-01-17 | 2006-02-08 | 飞思卡尔半导体公司 | Power management system |
| US7164307B2 (en) * | 2005-01-21 | 2007-01-16 | Intel Corporation | Bias generator for body bias |
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| CN101393466A (en) * | 2008-10-30 | 2009-03-25 | 上海交通大学 | Totally- integrated low noise power supply system in chip of radio frequency receiver |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113485504A (en) * | 2021-07-05 | 2021-10-08 | 珠海亿智电子科技有限公司 | Voltage reference circuit and circuit board with same |
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