CN102296282A - Method for improving using efficiency of solid state source by reverse connection - Google Patents
Method for improving using efficiency of solid state source by reverse connection Download PDFInfo
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- CN102296282A CN102296282A CN2011102605293A CN201110260529A CN102296282A CN 102296282 A CN102296282 A CN 102296282A CN 2011102605293 A CN2011102605293 A CN 2011102605293A CN 201110260529 A CN201110260529 A CN 201110260529A CN 102296282 A CN102296282 A CN 102296282A
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Abstract
The invention relates to a method for improving using efficiency of a solid state source by reverse connection. The method comprises the following steps of: 1, placing a source bottle into a water bath at the temperature of between 20 and 35 DEC C when the residual quantity of the solid state source in the source bottle is less than 50 percent, and turning off hand valves at a carrier gas inlet and a carrier gas outlet of the source bottle when pressure of the source bottle is 750 to 850 torrs and the flow quantity of source steam is 300 to 400 sccm; and 2, reversely butting the carrier gas inlet and the carrier gas outlet of the source bottle, namely communicating the outlet of the source bottle with the carrier outlet, and communicating the carrier gas inlet of the source bottle serving as an outlet with a pipeline, namely changing the normal low inlet high outlet into high inlet low outlet, wherein stable saturated steam pressure of the local range, where a bottom carrier gas pipe is, is utilized. The method has the characteristics of simpleness in operation, no influence on properties of an epitaxial layer, wide application range and high utilization ratio of the solid state source.
Description
Technical field
The invention belongs to Solid State Source use technology field, be specifically related to the method that a kind of reverse connection improves the Solid State Source service efficiency.
Background technology
MOCVD is the english abbreviation of organometallics chemical vapor deposition (Metal-organic Chemical Vapor Deposition).In MOCVD produces, solid TMIn source service efficiency is hanged down becomes main problem, for solid-state TMIn source, the stability of its saturated vapor pressure and service efficiency are the focuses that the user pays close attention to always, for the conventional source bottle, when the amount in source for a long time, the space in the bottle of source is less, saturated vapor pressure up and down equates substantially and stablizes.When bottle endogenous amount in source is used more after a little while, the space is bigger in the bottle of source, is difficult to guarantee that the saturated vapor pressure of top and bottom is identical, and the saturated vapor pressure instability in source causes the service efficiency in source in the bottle of source low in this moment top gas.At present, the method for raising the efficiency mainly contains two kinds, and first kind is the source bottle that adopts different designs, and second kind is improved its service efficiency by knocking the source bottle, but these two kinds of methods respectively have relative merits, and first kind of service efficiency can reach 95%, but costs an arm and a leg; Second kind of price is low, but service efficiency is up to 65%.
Summary of the invention
In order to overcome the shortcoming of above-mentioned prior art, the object of the present invention is to provide a kind of reverse connection to improve the method for Solid State Source service efficiency, have performance simple to operate, as not influence epitaxial film, applied widely and characteristics that the Solid State Source rate of utilization is high.
To achieve these goals, the technical solution used in the present invention is:
A kind of reverse connection improves the method for Solid State Source service efficiency, may further comprise the steps:
Step 1: when the Solid State Source residual content in the source bottle 1 less than 50% the time, it is 20~35 ℃ water bath that source bottle 1 is put into temperature, when bottle 1 internal pressure in source is that 750~850torr, source steam flow are under the situation of 300~400sccm, carrier gas inlet 2, the outlet 3 left-hand seat valves of source bottle 1 are turned off;
Step 2: with oppositely butt joint of the carrier gas inlet 2 of source bottle 1, outlet 3, the outlet 3 that is about to source bottle 1 is connected with carrier gas outlet 4, and the carrier gas inlet 2 of source bottle 1 is connected with pipeline 5 as exporting, and is about to normal low in and high out and changes high in and low out into.
The present invention is based on the conventional source bottle, under the constant situation of other conditions, when the source residual content less than 50% the time, only need oppositely butt joint is imported and exported in the carrier gas of source bottle, changing normal low in and high out into high in and low out gets final product, utilize subrange interior saturated vapor pressure in bottom carrier gas pipe place stable, the scope of saturated vapor pressure is 2.5~3.0torr in the subrange, thereby the service efficiency of the Solid State Source of conventional source bottle is brought up to more than 80%, had performance simple to operate, as not influence epitaxial film, applied widely and characteristics that the Solid State Source rate of utilization is high.
Description of drawings
Accompanying drawing is the inventive method synoptic diagram.
Embodiment
Below in conjunction with drawings and Examples the present invention is described in further detail.
Embodiment one
As shown in drawings, present embodiment oppositely connects the method that improves the Solid State Source service efficiency, may further comprise the steps:
Step 1: when the Solid State Source residual content in the source bottle 1 is 49%, it is 20 ℃ water bath that source bottle 1 is put into temperature, when bottle 1 internal pressure in source is that 750torr, source steam flow are under the situation of 300sccm, carrier gas inlet 2, the outlet 3 left-hand seat valves of source bottle 1 are turned off;
Step 2: with oppositely butt joint of the carrier gas inlet 2 of source bottle 1, outlet 3, the outlet 3 that is about to source bottle 1 is connected with carrier gas outlet 4, and the carrier gas inlet 2 of source bottle 1 is connected with pipeline 5 as exporting, and is about to normal low in and high out and changes high in and low out into.
Embodiment two
As shown in drawings, present embodiment oppositely connects the method that improves the Solid State Source service efficiency, may further comprise the steps:
Step 1: the Solid State Source residual content in source bottle 1 is 40% o'clock, it is 28 ℃ water bath that source bottle 1 is put into temperature, when bottle 1 internal pressure in source is that 800torr, source steam flow are under the situation of 360sccm, carrier gas inlet 2, the outlet 3 left-hand seat valves of source bottle 1 are turned off;
Step 2: with oppositely butt joint of the carrier gas inlet 2 of source bottle 1, outlet 3, the outlet 3 that is about to source bottle 1 is connected with carrier gas outlet 4, and the carrier gas inlet 2 of source bottle 1 is connected with pipeline 5 as exporting, and is about to normal low in and high out and changes high in and low out into.
Embodiment three
As shown in drawings, present embodiment oppositely connects the method that improves the Solid State Source service efficiency, may further comprise the steps:
Step 1: the Solid State Source residual content in source bottle 1 is 20% o'clock, it is 35 ℃ water bath that source bottle 1 is put into temperature, when bottle 1 internal pressure in source is that 850torr, source steam flow are under the situation of 400sccm, carrier gas inlet 2, the outlet 3 left-hand seat valves of source bottle 1 are turned off;
Step 2: with oppositely butt joint of the carrier gas inlet 2 of source bottle 1, outlet 3, the outlet 3 that is about to source bottle 1 is connected with carrier gas outlet 4, and the carrier gas inlet 2 of source bottle 1 is connected with pipeline 5 as exporting, and is about to normal low in and high out and changes high in and low out into.
Claims (4)
1. one kind oppositely connects the method that improves the Solid State Source service efficiency, it is characterized in that: may further comprise the steps:
Step 1: when the Solid State Source residual content in the source bottle (1) less than 50% the time, it is 20~35 ℃ water bath that source bottle (1) is put into temperature, when source bottle (1) internal pressure is that 750~850torr, source steam flow are under the situation of 300~400sccm, carrier gas inlet (2), outlet (3) left-hand seat valve of source bottle (1) are turned off;
Step 2: with carrier gas inlet (2), the oppositely butt joint of outlet (3) of source bottle (1), the outlet (3) that is about to source bottle (1) is connected with carrier gas outlet (4), the carrier gas inlet (2) of source bottle (1) is connected with pipeline (5) as outlet, is about to normal low in and high out and changes high in and low out into.
2. method according to claim 1 is characterized in that: may further comprise the steps:
Step 1: when the Solid State Source residual content in the source bottle (1) is 49%, it is 20 ℃ water bath that source bottle (1) is put into temperature, when source bottle (1) internal pressure is that 750torr, source steam flow are under the situation of 300sccm, carrier gas inlet (2), outlet (3) left-hand seat valve of source bottle (1) are turned off;
Step 2: with carrier gas inlet (2), the oppositely butt joint of outlet (3) of source bottle (1), the outlet (3) that is about to source bottle (1) is connected with carrier gas outlet (4), the carrier gas inlet (2) of source bottle (1) is connected with pipeline (5) as outlet, is about to normal low in and high out and changes high in and low out into.
3. method according to claim 1 is characterized in that: may further comprise the steps:
Step 1: the Solid State Source residual content in source bottle (1) is 40% o'clock, it is 28 ℃ water bath that source bottle (1) is put into temperature, when source bottle (1) internal pressure is that 800torr, source steam flow are under the situation of 360sccm, carrier gas inlet (2), outlet (3) left-hand seat valve of source bottle (1) are turned off;
Step 2: with carrier gas inlet (2), the oppositely butt joint of outlet (3) of source bottle (1), the outlet (3) that is about to source bottle (1) is connected with carrier gas outlet (4), the carrier gas inlet (2) of source bottle (1) is connected with pipeline (5) as outlet, is about to normal low in and high out and changes high in and low out into.
4. method according to claim 1 is characterized in that: may further comprise the steps:
Step 1: the Solid State Source residual content in source bottle (1) is 20% o'clock, it is 35 ℃ water bath that source bottle (1) is put into temperature, when source bottle (1) internal pressure is that 850torr, source steam flow are under the situation of 400sccm, carrier gas inlet (2), outlet (3) left-hand seat valve of source bottle (1) are turned off;
Step 2: with carrier gas inlet (2), the oppositely butt joint of outlet (3) of source bottle (1), the outlet (3) that is about to source bottle (1) is connected with carrier gas outlet (4), the carrier gas inlet (2) of source bottle (1) is connected with pipeline (5) as outlet, is about to normal low in and high out and changes high in and low out into.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113186513A (en) * | 2021-05-31 | 2021-07-30 | 聚灿光电科技(宿迁)有限公司 | Solid raw material source bottle and CVD device with same |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2223509A (en) * | 1988-10-04 | 1990-04-11 | Stc Plc | Vapour phase processing |
CN201512580U (en) * | 2009-09-17 | 2010-06-23 | 江苏南大光电材料股份有限公司 | Novel container for encapsulating solid high-pure metal organic compounds |
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2011
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Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2223509A (en) * | 1988-10-04 | 1990-04-11 | Stc Plc | Vapour phase processing |
CN201512580U (en) * | 2009-09-17 | 2010-06-23 | 江苏南大光电材料股份有限公司 | Novel container for encapsulating solid high-pure metal organic compounds |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113186513A (en) * | 2021-05-31 | 2021-07-30 | 聚灿光电科技(宿迁)有限公司 | Solid raw material source bottle and CVD device with same |
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Application publication date: 20111228 |