CN105470115A - Method for transferring gallium arsenide epitaxial layer to flexible metal substrate - Google Patents
Method for transferring gallium arsenide epitaxial layer to flexible metal substrate Download PDFInfo
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- CN105470115A CN105470115A CN201510899914.0A CN201510899914A CN105470115A CN 105470115 A CN105470115 A CN 105470115A CN 201510899914 A CN201510899914 A CN 201510899914A CN 105470115 A CN105470115 A CN 105470115A
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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Abstract
The invention discloses a method for transferring a gallium arsenide epitaxial layer to a flexible metal substrate. A metal foil is used as a transfer support substrate, so that the weight of a device is effectively reduced, the gravimetric specific power is increased, and a flexible function is achieved. A metal bonding method is used, a stable and high-conductivity connection mode is provided, and a bonding metal layer is prepared in a vacuum evaporation mode, so that the thickness control is easy to realize and the uniformity is good. A graphite flake is adopted as a buffer gasket, so that the bonding quality can be effectively improved, cavities are reduced, and the finished product rate is increased. According to the method, the gallium arsenide epitaxial layer is transferred to the flexible metal substrate with a metal bonding process. The method has the technical characteristics of portability and flexibility. The application range of III-V family epitaxial products can be expanded.
Description
Technical field
The present invention relates to technical field of semiconductors, specifically, is a kind of method gallium arsenide epitaxial layer being transferred to metal flexible substrate.
Background technology
Metal Organic Vapor epitaxy technology, be called for short MOCVD, with hydrogen carrier gas, metallo-organic compound steam and Nonmetal hydride are sent on the substrate of reaction heating indoor through variable connector, the advanced technology of epitaxial loayer is finally grown thereon by decomposition reaction. its growth course relates to fluid mechanics, vapour phase and solid surface reaction dynamics and the complex process that the two is coupled.Its epitaxial growth general is carried out under the nearly equilibrium condition of thermodynamics.
Take GaAs III-V race's epitaxial structure prepared by substrate growth be the important technical making solar cell and LED.Wherein, solar cell can be grown to multijunction solar cell.Its efficiency is far above other kind solar cells.Meanwhile, because GaAs belongs to direct gap semiconductor, only need thinner structure just can realize required function.At present, the extension transfer monocrystalline silicon that uses uses as translate substrate more.Its shortcoming is that thickness is large, and weight is high, and rigidity is frangible not bent and heat radiation is slow.
Summary of the invention
Technical problem to be solved by this invention is, a kind of method gallium arsenide epitaxial layer being transferred to metal flexible substrate is provided, gallium arsenide epitaxy device can be made to realize alleviating thickness and weight, flexible bendable, the method of good heat radiating, makes it have range of application widely.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is: a kind of method gallium arsenide epitaxial layer being transferred to metal flexible substrate, comprises the following steps:
(1) evaporation bond wire: the epitaxial wafer be made up of gallium arsenide substrate, GaInP barrier layer and epitaxial loayer successively and metal forming are carried out ultrasonic cleaning, then vacuum evaporation board is put into, the epitaxial surface of metal forming and epitaxial wafer evaporates Ti, Au successively, Ti, Au thickness is respectively 100-500nm, 500-1000nm; The epitaxial wafer that steaming degree is completed and metal forming evaporating surface alignment relative, and compress for subsequent use with graphite flake;
(2) metal bonding: the above-mentioned epitaxial wafer that clamped by graphite flake and metal forming are put into metal bonding machine together and carries out bonding, technological parameter temperature 350-400 DEG C, pressure 1-1.5MPa, time 0.5-2h;
(3) gallium arsenide substrate is removed: the epitaxial wafer complete above-mentioned bonding and metal forming are taken out, blue film is sticked or UV film carries out protecting and supporting in metal forming one side, put into corrosive liquid and carry out substrate etching, corrode until gallium arsenide substrate is all removed, till complete GaInP barrier layer is exposed on surface;
(4) GaInP barrier layer is removed with the corrosive liquid that the concentrated hydrochloric acid of volume ratio 1:1-2:1 mixes with SPA again; Then clean with deionized water rinsing, use nitrogen gun to dry up.
Described step (1) ultrasonic cleaning refers to puts into acetone ultrasonic cleaning more than 5 minutes.
During described step (1) evaporation, vacuum degree is greater than 10
-6pa.
The thickness on described step (1) GaInP barrier layer is 50-500nm.
The metal foil thickness that described step (1) adopts is >=0.008mm, and its material is stainless steel, aluminium, titanium, copper, the simple metal of nickel or alloy.
Described step (1) adopt Ti source purity to be greater than 99.999%, Au source purity to be greater than 99.999%.
Described step (1) graphite flake thickness 0.3mm-2mm.
Described step (3) pad pasting number of times is 2-10 layer.
Described step (3) corrosive liquid forms: volume ratio is that the sulfuric acid of mass percent concentration 98% accounts for 5%-15%, and the hydrogen peroxide of mass percent concentration 30% accounts for 50%-80%, and all the other are deionized water.
The invention has the beneficial effects as follows:
1, the present invention is owing to using metal forming as transfer support substrates.Effectively can alleviate device weight, improve gravimetric specific power, there is flexibility function simultaneously.In addition metal has better thermal conductivity and conductivity, has positive role for retainer member performance in different operating environment.
2, the present invention is owing to using metal bonding methods.Can provide a kind of stable and there is the connected mode of satisfactory electrical conductivity.Because adopting the mode of vacuum evaporation to prepare bonding metal layer, be easy to realize THICKNESS CONTROL and homogeneity is good.
3, the present invention is owing to have employed graphite flake as buffering spacer.Effectively can improve bonding quality, reduce cavity, improve rate of finished products.
4, applied metal bonding technology transfer gallium arsenide epitaxial layer of the present invention is to metal flexible substrate.Lighting can be realized, the technical characterstic of flexibility.The range of application of easily extensible III-V race extension product.
Accompanying drawing explanation
Fig. 1 is epitaxial structure schematic diagram required for the present invention;
Structural representation when Fig. 2 is bonding of the present invention;
Fig. 3 is structural representation after extension of the present invention transfer.
1, epitaxial loayer; 2, GaInP barrier layer; 3, gallium arsenide substrate; 4, bonding metal layer; 5, metal forming; 6, graphite flake
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail:
As Figure 1-3, gallium arsenide epitaxial layer is transferred to the method for metal flexible substrate by the present invention, and concrete grammar is as follows:
1, evaporation bond wire:
For realizing substrate transfer process, in epitaxial surface and metal forming, the mode evaporation bonding metal layer of vacuum evaporation need be adopted simultaneously.Steam coated metal and be followed successively by Ti, Au, thickness is respectively 100-500nm, 500-1000nm.During evaporation, vacuum degree is greater than 10
-6pa.
The epitaxial slice structure adopted needs to add GaInP barrier layer between gallium arsenide substrate and epitaxial loayer, and its thickness is 50-500nm;
The metal foil thickness adopted is >=0.008mm, and its material can be simple metal or the alloys such as stainless steel, aluminium, titanium, copper, nickel;
Adopt Ti source purity to be greater than 99.999%, Au source purity to be greater than 99.999%.
Concrete manufacturing step is as follows:
(1) the epitaxial wafer met the demands and metal forming are put as ultrasonic cleaning in acetone more than 5 minutes;
(2) the epitaxial wafer cleaned and metal forming are put into vacuum evaporation board, metal forming and epitaxial surface evaporate Ti, Au successively, and thickness is respectively 100-500nm, 500-1000nm;
(3) epitaxial wafer steaming degree completed and metal forming evaporating surface alignment relative, and compress for subsequent use with graphite flake.Graphite flake thickness 0.3mm-2mm.
2, metal bonding:
The above-mentioned epitaxial wafer that clamped by graphite flake and metal forming are put into metal bonding machine together and carries out bonding.Technological parameter temperature 350-400 DEG C, pressure 1-1.5MPa, time 0.5-2h.
3, gallium arsenide substrate is removed
The epitaxial wafer complete above-mentioned bonding and metal forming are taken out.Blue film is sticked or UV film carries out protecting and supporting in metal forming one side.Pad pasting number of times is 2-10 layer.The epitaxial wafer protected is put into corrosive liquid and carries out substrate etching, remove gallium arsenide substrate.Corrosive liquid composition volume ratio is sulfuric acid (mass percent concentration 98%) 5%-15%, and hydrogen peroxide (mass percent concentration 30%) 50%-80%, all the other are deionized water.Corrode until gallium arsenide substrate is all removed, till complete GaInP is exposed on surface.GaInP barrier layer is removed again with the concentrated hydrochloric acid of volume ratio 1:1-2:1 and the corrosive liquid of SPA.Then clean with deionized water rinsing, use nitrogen gun to dry up.
Above-described embodiment is only for illustration of technological thought of the present invention and feature, its object is to enable those skilled in the art understand content of the present invention and implement according to this, only can not limit the scope of the claims of the present invention with the present embodiment, namely the equal change done of all disclosed spirit or modification, still drop in the scope of the claims of the present invention.
Claims (9)
1. gallium arsenide epitaxial layer is transferred to a method for metal flexible substrate, it is characterized in that, comprise the following steps:
(1) evaporation bond wire: the epitaxial wafer be made up of gallium arsenide substrate, GaInP barrier layer and epitaxial loayer successively and metal forming are carried out ultrasonic cleaning, then vacuum evaporation board is put into, the epitaxial surface of metal forming and epitaxial wafer evaporates Ti, Au successively, Ti, Au thickness is respectively 100-500nm, 500-1000nm; The epitaxial wafer that steaming degree is completed and metal forming evaporating surface alignment relative, and compress for subsequent use with graphite flake;
(2) metal bonding: the above-mentioned epitaxial wafer that clamped by graphite flake and metal forming are put into metal bonding machine together and carries out bonding, technological parameter temperature 350-400 DEG C, pressure 1-1.5MPa, time 0.5-2h;
(3) gallium arsenide substrate is removed: the epitaxial wafer complete above-mentioned bonding and metal forming are taken out, blue film is sticked or UV film carries out protecting and supporting in metal forming one side, put into corrosive liquid and carry out substrate etching, corrode until gallium arsenide substrate is all removed, till complete GaInP barrier layer is exposed on surface;
(4) GaInP barrier layer is removed with the corrosive liquid that the concentrated hydrochloric acid of volume ratio 1:1-2:1 mixes with SPA again; Then clean with deionized water rinsing, use nitrogen gun to dry up.
2. method gallium arsenide epitaxial layer being transferred to metal flexible substrate according to claim 1, is characterized in that, described step (1) ultrasonic cleaning refers to puts into acetone ultrasonic cleaning more than 5 minutes.
3. method gallium arsenide epitaxial layer being transferred to metal flexible substrate according to claim 1, is characterized in that, during described step (1) evaporation, vacuum degree is greater than 10
-6pa.
4. method gallium arsenide epitaxial layer being transferred to metal flexible substrate according to claim 1, is characterized in that, the thickness on described step (1) GaInP barrier layer is 50-500nm.
5. method gallium arsenide epitaxial layer being transferred to metal flexible substrate according to claim 1, it is characterized in that, the metal foil thickness that described step (1) adopts is >=0.008mm, and its material is stainless steel, aluminium, titanium, copper, the simple metal of nickel or alloy.
6. method gallium arsenide epitaxial layer being transferred to metal flexible substrate according to claim 1, is characterized in that, described step (1) adopt Ti source purity to be greater than 99.999%, Au source purity to be greater than 99.999%.
7. method gallium arsenide epitaxial layer being transferred to metal flexible substrate according to claim 1, is characterized in that, described step (1) graphite flake thickness 0.3mm-2mm.
8. method gallium arsenide epitaxial layer being transferred to metal flexible substrate according to claim 1, is characterized in that, described step (3) pad pasting number of times is 2-10 layer.
9. method gallium arsenide epitaxial layer being transferred to metal flexible substrate according to claim 1, it is characterized in that, described step (3) corrosive liquid forms: volume ratio is that the sulfuric acid of mass percent concentration 98% accounts for 5%-15%, the hydrogen peroxide of mass percent concentration 30% accounts for 50%-80%, and all the other are deionized water.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106373867A (en) * | 2016-09-27 | 2017-02-01 | 中国电子科技集团公司第十八研究所 | Method for transferring gallium arsenide epitaxial layer to organic flexible substrate |
| CN110783264A (en) * | 2019-10-31 | 2020-02-11 | 长江存储科技有限责任公司 | Wafer protection structure and protection method |
| CN111326467A (en) * | 2019-10-16 | 2020-06-23 | 中国电子科技集团公司第五十五研究所 | Flexible inorganic semiconductor film and preparation method thereof |
| CN111968918A (en) * | 2020-08-26 | 2020-11-20 | 中国科学技术大学 | Method for reducing thickness of gallium oxide substrate layer |
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| US20100122764A1 (en) * | 2008-11-14 | 2010-05-20 | Emcore Solar Power, Inc. | Surrogate Substrates for Inverted Metamorphic Multijunction Solar Cells |
| US20110318866A1 (en) * | 2007-07-03 | 2011-12-29 | Microlink Devices, Inc. | Methods for fabricating thin film iii-v compound solar cell |
| CN103227137A (en) * | 2013-02-08 | 2013-07-31 | 江苏微浪电子科技有限公司 | Large-area bonding structure of semiconductor substrate and manufacturing method thereof |
| CN103545239A (en) * | 2013-09-17 | 2014-01-29 | 新磊半导体科技（苏州）有限公司 | Epitaxial wafer stripping process based on films |
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Patent Citations (4)
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| US20110318866A1 (en) * | 2007-07-03 | 2011-12-29 | Microlink Devices, Inc. | Methods for fabricating thin film iii-v compound solar cell |
| US20100122764A1 (en) * | 2008-11-14 | 2010-05-20 | Emcore Solar Power, Inc. | Surrogate Substrates for Inverted Metamorphic Multijunction Solar Cells |
| CN103227137A (en) * | 2013-02-08 | 2013-07-31 | 江苏微浪电子科技有限公司 | Large-area bonding structure of semiconductor substrate and manufacturing method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106373867A (en) * | 2016-09-27 | 2017-02-01 | 中国电子科技集团公司第十八研究所 | Method for transferring gallium arsenide epitaxial layer to organic flexible substrate |
| CN106373867B (en) * | 2016-09-27 | 2019-09-10 | 中国电子科技集团公司第十八研究所 | A method of gallium arsenide epitaxial layer is transferred to organic flexible substrate |
| CN111326467A (en) * | 2019-10-16 | 2020-06-23 | 中国电子科技集团公司第五十五研究所 | Flexible inorganic semiconductor film and preparation method thereof |
| CN110783264A (en) * | 2019-10-31 | 2020-02-11 | 长江存储科技有限责任公司 | Wafer protection structure and protection method |
| CN111968918A (en) * | 2020-08-26 | 2020-11-20 | 中国科学技术大学 | Method for reducing thickness of gallium oxide substrate layer |
| CN111968918B (en) * | 2020-08-26 | 2024-03-29 | 中国科学技术大学 | Method for reducing thickness of gallium oxide substrate layer |
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