CN103757606A - Pressure difference control system of MOCVD (Metal Organic Chemical Vapor Deposition) gas circuit - Google Patents
Pressure difference control system of MOCVD (Metal Organic Chemical Vapor Deposition) gas circuit Download PDFInfo
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- CN103757606A CN103757606A CN201310748891.4A CN201310748891A CN103757606A CN 103757606 A CN103757606 A CN 103757606A CN 201310748891 A CN201310748891 A CN 201310748891A CN 103757606 A CN103757606 A CN 103757606A
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Abstract
The invention discloses a pressure difference control system of an MOCVD (Metal Organic Chemical Vapor Deposition) gas circuit. The system comprises a main gas carrying pipeline, a main gas circuit pipeline and a bypass pipeline and is characterized in that a main gas circuit pipeline quality flow controller and a pressure sensor are sequentially installed at the front end of the main gas circuit pipeline, a pressure controller is installed at the rearmost end of the bypass pipeline, six four-way switching valves are installed on the main gas circuit pipeline, six three-way switching valves are installed on the bypass pipeline, and each four-way switching valve is connected with the corresponding three-way switching valve through a corresponding branch pipe. Therefore, after a reaction gas enters into the main gas circuit pipeline, the gathered pressure of the bypass pipeline changes along with the pressure of the main gas circuit pipeline at any time under the joint effect of the pressure sensor, a PLC (Programmable Logic Controller) and the pressure controller, and a pressure difference following relationship always exists between the bypass pipeline and the main gas circuit pipeline. Thus, the reaction gas can be smoothly switched into the main gas circuit pipeline and conveyed to a reaction chamber while the non-reaction gas is switched into the bypass pipeline for preparation, so that gas between the main gas circuit and the bypass is precisely controlled to quickly and stably switch.
Description
Technical field
The present invention relates to semiconductor material growth apparatus technical field, especially relate to a kind of MOCVD gas circuit pressure reduction Controlling System.
Background technology
Metal organic chemical vapor deposition system (MOCVD) is as the major equipment of semiconductor material growing, its III-V compounds of group that is mainly used in growing is as semiconductor materials such as gan (GaN), gallium arsenide (GaAs), use MOCVD equipment also can be used for the low dimensional structures materials such as growing semiconductor heterojunction, superlattice, quantum well, at semiconductor optoelectronic and microelectronic, be used widely.
The starting material that MOCVD growth is used mainly contain organometallics (MO) and hydride, wherein MO source is mainly stored in the bottle of stainless source with solid-state or liquid two kinds of forms, need to pass through gas path pipe by carrier gas MO source steam is transported in reaction chamber.In process of growth, to use multiple organic source, mainly contain trimethyl-gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn), two luxuriant magnesium (Cp
2mg).Hydride mainly contains NH
3and SiH
4.Organic source and hydride enter bypass duct through source bottle separately and prepare, and during growth, reactant gases is brought in reaction chamber by gas circuit main pipeline by swiftly flowing carrier gas, and nonreactive gas source is cut bypass duct and prepared.In order to meet the precipitous heterojunction of growth, or when doping sudden change, often need transformationreation gas, this will ask reactant gases can be between main gas circuit and bypass must quick and stable switching, and while switching, maintain gas circuit pressure equilibrium.
In some main flow MOCVD equipment, be mainly by fill a differential manometer between main road and bypass gas circuit, utilize the pressure difference signal between main gas circuit and bypass, the mass flowmeter control bypass gas flow of installing by bypass front end again, thereby make the pressure moment of bypass follow the pressure change of main road, thereby reach the pressure balance of main bypass while switching.But in this MOCVD equipment, a needle-valve need to be installed in the rear end of bypass, needle-valve is long-time can stifledly be lived after using, and brings inconvenience, and safeguards very trouble, so it is simple to invent a kind of result, the air-path control system that solves needle-valve blockage problem is very necessary.
summary of the invention:
The object of the present invention is to provide a kind of can accurately control between main road and bypass quick smoothly switch, the MOCVD gas circuit pressure reduction Controlling System that simple in structure, maintenance workload is few.
The object of the present invention is achieved like this:
The MOCVD gas circuit pressure reduction Controlling System of a kind of growing gallium nitride (GaN), comprising: main carrier gas channel, and main gas path pipe and bypass duct, feature is: main carrier gas channel passes into H
2or N
2or H
2, N
2the carrier gas mixing, the reactant gases passing in main gas path pipe has five kinds of organic sources: trimethyl-gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn), the luxuriant magnesium (CP of p-type doping agent two
2mg) and N-shaped doping agent silane: SiH
4; The front end of main carrier gas channel, main gas path pipe and bypass duct is all provided with mass flowmeter (MFC), the end of main carrier gas channel, main gas path pipe is all equipped with normally closed valve, a pressure transmitter (PT) is housed after the mass flowmeter of main gas path pipe, six four-way switching valves are installed successively after pressure transmitter, six three-way switch valves are installed successively on bypass duct, between the three-way switch valve of each four-way switching valve and correspondence, be connected with small transfer line, SiH
4after flowing out from source bottle separately with five kinds of organic sources, be connected successively with six four-way switching valves respectively, can cut main gas path pipe by four-way switching valve, maybe can cut bypass duct by three-way switch valve, in the rearmost end of bypass duct, a pressure controller (PC) is installed; The main carrier gas channel threeway of the outlet side of main carrier gas channel after by the normally closed valve of main gas path pipe accesses main gas path pipe.
Main carrier gas channel and main gas path pipe are separately.
When the precipitous heterojunction of growth maybe needs sudden change doping, need to convert multiple or different reactant gasess makes them can between main gas path pipe and bypass duct, carry out the switching of quick and stable, this just need to main gas path pipe and bypass duct between keep constant pressure reduction always, when the air pressure of main gas path pipe changes, also need the air pressure of bypass duct also will follow change, and remain that is followed a relation.The present invention adopts.
Main gas path pipe front end is equipped with pressure transmitter (PT), bypass end dress pressure controller (PC), six four-way switching valves are installed on main gas path pipe, six three-way switch valves are installed on bypass duct, each four-way switching valve connects by corresponding arm with corresponding three-way switch valve, after reactant gases is cut main gas path pipe and is had, pressure transmitter (PT) meeting that main gas path pipe front end connects is the programmable logic controller (PLC) to MOCVD the force value real-time Transmission of main gas path pipe, PLC can control the pressure controller (PC) of bypass duct rear end, according to the variation of main gas path pipe pressure, change at any time the pressure in bypass duct, to keep main gas path pipe and bypass duct to remain that pressure reduction follows relation.Main carrier gas road and main gas path pipe are separately, three-way switch valve is closed, four-way switching valve is opened, reactant gases is cut main gas path pipe, the mass flowmeter of the carrier gas of low discharge before main gas path pipe enters main carrier gas channel, drive reactant gases to transport in main gas path pipe, the main carrier gas that main carrier gas accesses main gas path pipe by main carrier gas channel threeway reactant transport gas enters shower nozzle.
Therefore, tool of the present invention has the following advantages:
1, main carrier gas channel and main gas path pipe are divided into two-way, such design only need be used compared with the carrier gas of low discharge winner's gas path pipe just to guarantee carrying of reactant gases in main gas path pipe, in main gas path pipe, pressure is little, thereby reduce the pressure reduction between each four-way switching valve on main gas path pipe, be beneficial to and quick smoothly switch organic source, facilitate the growth of various doping sudden changes and precipitous heterojunction.
2, the air pressure of pressure controller control bypass duct, both without flow-compensated, do not need to change the gas flow of bypass duct yet, the constant flow of bypass duct, pressure reduction equity between the switching valve of main gas path pipe and bypass duct, according to Material growth needs, the switching of quick and stable can be carried out in all kinds of organic sources between main gas path pipe and bypass duct;
3, the present invention has cancelled traditional needle-valve, without worry long-time use can cause needle-valve stop up problem, alleviated and safeguarded work.By being connected on the control of pressure controller of bypass duct rear end, just can reach the object of the pressure change of the main gas path pipe of pressure follow of bypass duct
accompanying drawing explanation:
Fig. 1 is specific embodiment intention:
Wherein: 1-main carrier gas channel, 11-main carrier gas threeway, 2-mass flow controller, 3-normally closed valve 4-main gas path pipe, 41-four-way switching valve, 5-pressure transmitter, 4-four-way switching valve, 6-small transfer line, 7-pressure controller, 8-source bottle, 9-bypass duct matter, 91-threeway is switched
embodiment:
Below in conjunction with embodiment and contrast accompanying drawing the present invention is further detailed.
The MOCVD gas circuit pressure reduction Controlling System of a kind of growing gallium nitride (GaN), comprising: main carrier gas channel 1, and main gas path pipe 4 and bypass duct 9, main carrier gas channel 1 passes into H
2or N
2or H
2, N
2the carrier gas mixing, the reactant gases that can pass in main gas path pipe 4 has five kinds of organic sources: trimethyl-gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn), the luxuriant magnesium (CP of p-type doping agent two
2mg) and N-shaped doping agent silane: SiH
4.The front end of main carrier gas channel 1, main gas path pipe 4 and bypass duct 9 is all provided with mass flowmeter (MFC) 2, the end of main carrier gas channel 1, main gas path pipe 4 is all equipped with normally closed valve 11, a pressure transmitter (PT) 5 is housed after the mass flowmeter 2 of main gas path pipe 4, six four-way switching valves 41 are installed successively after pressure transmitter 5, six three-way switch valves 91 are installed successively on bypass duct 9, between the three-way switch valve 91 of each four-way switching valve 41 and correspondence, be connected with small transfer line 6, SiH
4after flowing out from source bottle 8 separately with five kinds of organic sources, be connected successively with six four-way switching valves 41 respectively, can cut main gas path pipe 4 by four-way switching valve 41, maybe can cut bypass duct 9 by three-way switch valve 91, in the rearmost end of bypass duct 9, a pressure controller (PC) 7 is installed.The main carrier gas channel threeway 11 of the outlet side of main carrier gas channel 1 after by the normally closed valve 3 of main gas path pipe accesses main gas path pipe 4.
Main carrier gas channel 1 and main gas path pipe 4 are separately.
First, reactant gases flows out in advance and prepares at bypass duct 9 from source bottle 8, four-way switching valve 41 is opened, threeway switching 91 is closed, reactant gases is cut main gas path pipe 4, main gas path pipe 4 passes into the carrier gas reactant transport gas of low discharge to main branch pipe tee connection 11 places of carrying, and reactant gases is written into shower nozzle by main carrier gas more together., four-way switching valve 41 is closed, and three-way switch valve 91 is opened reactant gases and can be cut again bypass duct 10 and prepare.Main gas path pipe 41 responds after gas enters, in main gas path pipe, there is certain pressure, pressure transmitter (PT) 5 meetings that main gas path pipe 4 front ends connect are the programmable logic controller (PLC) to MOCVD the force value real-time Transmission of main gas path pipe 4, PLC can control the pressure controller (PC) 7 of bypass duct 9 rear ends, according to the variation of main gas path pipe 4 pressure, change at any time the pressure in bypass duct 9, to keep main gas path pipe 4 and bypass duct 9 to remain that pressure reduction follows relation, make the switching between main gas path pipe 4 and bypass duct 9 that various gas can quick and stable.The little carrier gas reactant transport of main gas path pipe 4 gas, in main gas path pipe 4, pressure is little, and the four-way switching valve place pressure reduction of each reactant gases is little, is more conducive to switch.
Claims (3)
1. a MOCVD gas circuit pressure reduction Controlling System, comprising: main carrier gas channel, and main gas path pipe and bypass duct, feature is that main carrier gas channel passes into H
2or N
2or H
2, N
2the carrier gas mixing, the reactant gases passing in main gas path pipe has five kinds of organic sources: trimethyl-gallium, triethyl-gallium, trimethyl aluminium, trimethyl indium, the luxuriant magnesium of p-type doping agent two and N-shaped doping agent silane: SiH
4; The front end of main carrier gas channel, main gas path pipe and bypass duct is all provided with mass flowmeter (MFC), the end of main carrier gas channel, main gas path pipe is all equipped with normally closed valve, a pressure transmitter (PT) is housed after the mass flowmeter of main gas path pipe, six four-way switching valves are installed successively after pressure transmitter, six three-way switch valves are installed successively on bypass duct, between the three-way switch valve of each four-way switching valve and correspondence, be connected with small transfer line, SiH
4after flowing out from source bottle separately with five kinds of organic sources, be connected successively with six four-way switching valves respectively, can cut main gas path pipe by four-way switching valve, maybe can cut bypass duct by three-way switch valve; The main carrier gas channel threeway of the outlet side of main carrier gas channel after by the normally closed valve of main gas path pipe accesses main gas path pipe.
2. MOCVD gas circuit pressure reduction Controlling System according to claim 1, is characterized in that: in the rearmost end of bypass duct, a pressure controller is installed.
3. MOCVD gas circuit pressure reduction Controlling System according to claim 1, is characterized in that: main carrier gas channel and main gas path pipe are separately.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310748891.4A CN103757606A (en) | 2013-12-31 | 2013-12-31 | Pressure difference control system of MOCVD (Metal Organic Chemical Vapor Deposition) gas circuit |
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| CN201310748891.4A CN103757606A (en) | 2013-12-31 | 2013-12-31 | Pressure difference control system of MOCVD (Metal Organic Chemical Vapor Deposition) gas circuit |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI575348B (en) * | 2014-12-25 | 2017-03-21 | 東芝股份有限公司 | Air supply system |
| CN113502460A (en) * | 2021-09-09 | 2021-10-15 | 苏州长光华芯光电技术股份有限公司 | Preparation method of semiconductor structure and semiconductor growth equipment |
| CN114150381A (en) * | 2021-11-15 | 2022-03-08 | 芯三代半导体科技(苏州)有限公司 | Silicon carbide epitaxial growth device |
| CN115537780A (en) * | 2022-10-20 | 2022-12-30 | 季华实验室 | Air floatation driving device, system and method for reaction chamber |
Citations (2)
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| US20120231610A1 (en) * | 2011-03-09 | 2012-09-13 | Yuusuke Sato | Vapor-phase growing apparatus and vapor-phase growing method |
| CN102732956A (en) * | 2012-06-18 | 2012-10-17 | 中国电子科技集团公司第四十八研究所 | MO source supply system for GaN epitaxy of MOCVD equipment |
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2013
- 2013-12-31 CN CN201310748891.4A patent/CN103757606A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120231610A1 (en) * | 2011-03-09 | 2012-09-13 | Yuusuke Sato | Vapor-phase growing apparatus and vapor-phase growing method |
| CN102732956A (en) * | 2012-06-18 | 2012-10-17 | 中国电子科技集团公司第四十八研究所 | MO source supply system for GaN epitaxy of MOCVD equipment |
Non-Patent Citations (1)
| Title |
|---|
| 王卫星: "MOCVD设备气体输运关键技术的研究", 《中国优秀硕士学位论文全文数据库 信息科技辑》, no. 5, 15 May 2010 (2010-05-15) * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI575348B (en) * | 2014-12-25 | 2017-03-21 | 東芝股份有限公司 | Air supply system |
| CN113502460A (en) * | 2021-09-09 | 2021-10-15 | 苏州长光华芯光电技术股份有限公司 | Preparation method of semiconductor structure and semiconductor growth equipment |
| CN113502460B (en) * | 2021-09-09 | 2021-12-03 | 苏州长光华芯光电技术股份有限公司 | Preparation method of semiconductor structure and semiconductor growth equipment |
| CN114150381A (en) * | 2021-11-15 | 2022-03-08 | 芯三代半导体科技(苏州)有限公司 | Silicon carbide epitaxial growth device |
| CN114150381B (en) * | 2021-11-15 | 2023-10-31 | 芯三代半导体科技(苏州)有限公司 | Silicon carbide epitaxial growth device |
| CN115537780A (en) * | 2022-10-20 | 2022-12-30 | 季华实验室 | Air floatation driving device, system and method for reaction chamber |
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Application publication date: 20140430 |