CN102294648A - Method for chemically and mechanically polishing metals - Google Patents
Method for chemically and mechanically polishing metals Download PDFInfo
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- CN102294648A CN102294648A CN2010102178636A CN201010217863A CN102294648A CN 102294648 A CN102294648 A CN 102294648A CN 2010102178636 A CN2010102178636 A CN 2010102178636A CN 201010217863 A CN201010217863 A CN 201010217863A CN 102294648 A CN102294648 A CN 102294648A
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Abstract
The invention provides a method for chemically and mechanically polishing a metal. The method comprises a step of performing grinding on three grinding tables. While performing grinding on the third grinding table, the method comprises the following steps of: presetting first grinding time and second grinding time, and performing the first step of grinding on the third grinding table within the first grinding time, and performing the second step of grinding on the third grinding table within the second grinding time; grinding an oxide layer and a metal by employing a grinding fluid having a grinding selection ratio greater than 1 to the oxide layer and the metal; when the first predetermined grinding time expires, grinding the oxide layer and the metal by employing a grinding fluid having a grinding selection not greater than 1 to the oxide layer and the metal; and when the second predetermined grinding time expires, enabling the metal to reach a predetermined thickness and keep as high as the oxide layer. The method greatly improves the planarization degree of the metal in the chemical mechanical polishing process.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly a kind of method of cmp metal.
Background technology
At present, along with the extensive use of electronic equipment, semi-conductive manufacturing process has obtained development at full speed, in semi-conductive manufacturing process, relates to chemical mechanical milling tech (CMP).The metal interconnecting wires of last part technology interconnection layer generally adopts copper, so need carry out cmp to copper.
Abrasive metal copper layer is mainly realized by three grinding tables in the prior art, and each grinding table is carried out a grinding step respectively, specifies the cmp method of metal copper below.
Fig. 1 is the generalized section of first operation of chemical and mechanical grinding method in the prior art.Go up execution first operation at first grinding table (Platen 1), as shown in Figure 1, adopt bigger grinding rate (RemoveRate) that metallic copper is ground, remove the metallic copper of the groove top overwhelming majority, be also referred to as main grinding.The time of implementation of first operation is controlled by real-time technology controlling and process (RTPC, Real Time Process Control) function, and first operation requires the thickness of groove upper metal copper to have certain residue after finishing.
Fig. 2 is the generalized section of second operation of chemical and mechanical grinding method in the prior art.(Platen 2) carry out second operation on second grinding table, as shown in Figure 2, variation by reflectivity comes the real-time detection grinding endpoint, this operation adopts less grinding rate (Remove Rate) to remove the remaining metallic copper in groove top, when detect remove the remaining metallic copper in groove top fully after, finish second operation.
Specifically, the method of real-time detection grinding endpoint is: laser generator and sensor are installed below grinder station, laser generator gives off laser beam in real time, and laser beam invested wafer (board grinds simultaneously to the metallic copper on the wafer), simultaneously, sensor receives the reflection intensity data from wafer in real time, and according to the different reflected intensitys of unlike material to laser, determines grinding endpoint by analyzing reflection intensity data.
Fig. 3 is the generalized section of the 3rd operation of chemical and mechanical grinding method in the prior art.(Platen 3) carry out the 3rd operation on the 3rd grinding table, as shown in Figure 3, set in advance milling time, remove groove outer barrier layer and a spot of oxide layer, reach the purpose of isolation to guarantee the remaining metallic copper in groove top all to be removed.
Specifically, at first select a slice to need the testing wafer (wafer) of metal grinding, be formed with the metal interconnecting layer abrasive structure identical on this wafer with the product wafer.Wherein, the product wafer is the wafer of the device that distributed on it, finally can become finished product through multiple working procedure; Though and the testing wafer test structure is identical with the product wafer, after test, go out of use.Testing wafer carries out test of many times on grinding table, preestablish milling time grinds at every turn, and the wafer after will grinding inserts the thickness measure board and carries out thickness measure, perhaps carry out morphology observation at former seed microscopically, milling time when finally reaching shown in Figure 3 is as the predetermined milling time of grinding on the 3rd grinding table with crowd wafer.
In Fig. 2, usually when detecting grinding endpoint, still continue to grind, to guarantee the removing remaining metallic copper in groove top fully, therefore during the grinding on finishing second grinding table, often the part metals copper in the groove is ground away, and forms to have the structure of copper depression, shown in Fig. 2 a, Fig. 2 a is the defective generalized section through abrasive metal copper behind second grinding table, and can't obtain ideal structure as shown in Figure 2.In order to eliminate this defective, existing a kind of method is: through the 3rd grinding table the time, adopt the grinding selectivity ratio of oxide layer and metallic copper greater than 1 lapping liquid, metallic copper is ground.Lapping liquid comprises abrasive grains and chemical assistant, by lapping liquid constantly is sprayed on the grinding table, has the relative grinding table motion of part to be ground of oxide layer and metallic copper simultaneously, realizes the grinding of oxide layer and metallic copper.The difference of lapping liquid composition, the speed that removal oxide layer and metallic copper are ground in decision is different, i.e. the grinding selectivity ratio difference.
Through discovering, though this method has been eliminated the sunk structure defective among Fig. 2 a, but metallic copper requires to reach certain square resistance (Rs) after through the 3rd grinding table, promptly require the metallic copper in the groove among Fig. 3 to have predetermined height (on the thickness measure board, measuring), so when abrasive metal copper met the requirements of height, metallic copper was often outstanding than oxide layer.This is because the grinding oxide layer is faster than abrasive metal copper in this process, and keep above-mentioned state always, the a certain moment, being ground to oxide layer by original copper depression structure maintains an equal level mutually with metallic copper, and this moment, metallic copper did not also meet the requirements of height, so when continue to grind arriving the grinding endpoint of the 3rd operation, it is more outstanding than oxide layer that metallic copper often becomes, shown in Fig. 3 a, Fig. 3 a is the defective generalized section through abrasive metal copper behind the 3rd grinding table.That is to say that this method that is adopted is to be not enough to thoroughly solve the defective that metallic copper occurs in process of lapping, promptly can't realize the ideal structure among Fig. 3 in the 3rd operation.
Summary of the invention
In view of this, the technical problem of the present invention's solution is: improve the degree of planarization of metal in chemical mechanical planarization process.
For solving the problems of the technologies described above, technical scheme of the present invention specifically is achieved in that
The invention discloses a kind of method of cmp metal, be included in lead on first grinding table grinding, grind to remove above the groove remaining metal on second grinding table and on the 3rd grinding table abrasive metal reach predetermined altitude, remove the barrier layer simultaneously and keep the step identical with the metal height with the predetermined thickness oxide layer, when grinding on the 3rd grinding table, this method comprises:
Preestablish first milling time and second milling time, carry out the first step on inherent the 3rd grinding table of described first milling time and grind, carried out for second step on inherent the 3rd grinding table of described second milling time and grind;
Employing is ground oxide layer and metal greater than 1 lapping liquid the grinding selectivity ratio of oxide layer and metal, when reaching predetermined first milling time, employing is not more than 1 lapping liquid to the grinding selectivity ratio of oxide layer and metal oxide layer and metal is ground, when reaching predetermined second milling time, metal reaches predetermined thickness, and maintenance is identical with the oxide layer height.
Described grinding is when reaching predetermined first milling time, and the height of metal and oxide layer is equal;
In described predetermined second milling time, adopt grinding selectivity ratio to oxide layer and metal to equal 1 lapping liquid oxide layer and metal are ground.
Definite method of first milling time is: testing wafer is adopted on the 3rd grinding table the grinding selectivity ratio of oxide layer and metal is ground greater than 1 lapping liquid, when the height that measures metal and oxide layer is equal, the used time is defined as first milling time; Described testing wafer has identical abrasive structure with the product wafer;
Definite method of second milling time is: adopt grinding selectivity ratio to oxide layer and metal to equal 1 lapping liquid on the 3rd grinding table testing wafer and grind, reach predetermined altitude when measuring metal, and when equal, the used time is defined as second milling time with the oxide layer height.
Described grinding is when reaching predetermined first milling time, and the height of metal is higher than the height of oxide layer;
In described predetermined second milling time, adopt the grinding selectivity ratio of oxide layer and metal is ground oxide layer and metal less than 1 lapping liquid.
Definite method of first milling time is: testing wafer is adopted on the 3rd grinding table the grinding selectivity ratio of oxide layer and metal is ground greater than 1 lapping liquid, when the height that measures metal is higher than the height of oxide layer, the used time is defined as first milling time; Described testing wafer has identical abrasive structure with the product wafer;
Definite method of second milling time is: testing wafer is adopted on the 3rd grinding table the grinding selectivity ratio of oxide layer and metal is ground less than 1 lapping liquid, reach predetermined altitude when measuring metal, and when equal, the used time is defined as second milling time with the oxide layer height.
When described metal is copper, described grinding selectivity ratio to oxide layer and metallic copper greater than the selection of 1 lapping liquid than for greater than 1.2.
As seen from the above technical solutions, the method of cmp metal of the present invention, because the grinding of metal interconnecting layer is after through second grinding table, the structure that the metal depression can occur, so the first step that the present invention carries out on the 3rd grinding table adopts the grinding selectivity ratio of oxide layer and metal is ground oxide layer and metal greater than 1 lapping liquid, second step adopted the grinding selectivity ratio to oxide layer and metal to be not more than 1 lapping liquid oxide layer and metal is ground, finally make the Rs value of metal reach desired value, and obtain desirable plat structure.Method of the present invention was divided into for two steps on the 3rd grinding table grinds, and has overcome to obtain the outstanding fault of construction of metal in the prior art on the 3rd grinding table, has realized grinding-flatening preferably.
Description of drawings
Fig. 1 is the generalized section of first operation of chemical and mechanical grinding method in the prior art.
Fig. 2 is the generalized section of second operation of chemical and mechanical grinding method in the prior art.
Fig. 3 is the generalized section of the 3rd operation of chemical and mechanical grinding method in the prior art.
Fig. 2 a is the defective generalized section through abrasive metal copper behind second grinding table.
Fig. 3 a is the defective generalized section through abrasive metal copper behind the 3rd grinding table.
Fig. 4 is the generalized section of first embodiment of the invention in the enterprising row metal copper of the 3rd grinding table abrasive method.
Fig. 5 is the generalized section of second embodiment of the invention in the enterprising row metal copper of the 3rd grinding table abrasive method.
The specific embodiment
For make purpose of the present invention, technical scheme, and advantage clearer, below with reference to the accompanying drawing embodiment that develops simultaneously, the present invention is described in more detail.
Core concept of the present invention is, metallic copper is during through the 3rd grinding table, being divided into two steps carries out: the first step: adopt the grinding selectivity ratio of oxide layer and metallic copper greater than 1 lapping liquid, metallic copper and oxide layer are ground, at ordinary times at a stalemate when the height of metallic copper and oxide layer, carried out for second step; Second step was adopted the identical lapping liquid of grinding ratio to oxide layer and metallic copper, and metallic copper and oxide layer are ground, and reached predetermined altitude until the height of metallic copper.Perhaps the second embodiment of the present invention is: metallic copper is during through the 3rd grinding table, being divided into two steps carries out: the first step: adopt lapping liquid greater than 1 is selected in the grinding of oxide layer and metallic copper, metallic copper and oxide layer are ground, when the height of metallic copper is higher than the height of oxide layer, carried out for second step; Second step adopted the grinding selectivity ratio of metallic copper and oxide layer greater than 1 lapping liquid, and metallic copper and oxide layer are ground, and reached predetermined altitude until the height of metallic copper.
The method of abrasive metal copper of the present invention may further comprise the steps:
Step 11, see also Fig. 1, at the main metallic copper that grinds predetermined thickness above the groove on first grinding table;
Step 12, see also Fig. 2 a, remove remaining metallic copper above the groove grinding on second grinding table;
Step 13, abrasive metal copper reaches predetermined altitude on the 3rd grinding table, removes the barrier layer simultaneously and keeps identical with the metallic copper height with the predetermined thickness oxide layer, and wherein this step is subdivided into two and goes on foot and carry out.Below by two specific embodiments step 13 is elaborated.
First embodiment of the invention may further comprise the steps in the enterprising row metal copper of the 3rd grinding table abrasive method:
Preestablish first milling time and second milling time, carry out the first step on inherent the 3rd grinding table of described first milling time and grind, carried out for second step on inherent the 3rd grinding table of described second milling time and grind.Wherein, predefined first milling time and second milling time all are to obtain by testing wafer is carried out test of many times, when grinding reaches first milling time, can observe the wafer that tests by former seed microscope, the metal on it is identical with the oxide layer height; When grinding reaches second milling time, can measure metallic copper by the thickness measure board and whether reach predetermined altitude.
The first step: adopt the grinding selectivity ratio of oxide layer and metallic copper greater than 1 lapping liquid, metallic copper is ground, when reaching predetermined first milling time, the height of metallic copper and oxide layer maintains an equal level mutually, carried out for second step then: adopt the identical lapping liquid of grinding ratio to oxide layer and metallic copper, metallic copper is ground, reach predetermined altitude until the height of metallic copper.Grinding can be removed barrier layer and partial oxidation layer gradually, and part metals copper.The grinding selectivity ratio of oxide layer and metallic copper is bigger, general oxide layer: metallic copper＞1.2: 1, owing to grind the speed of the speed of oxide layer greater than abrasive metal copper, so a certain moment, being ground to oxide layer by original copper depression structure maintains an equal level mutually with metallic copper, as shown in Figure 4, reach predetermined first milling time this moment, so finish first grinding steps, begin to carry out second grinding steps: adopt the identical lapping liquid of speed that grinds oxide layer and metallic copper, the speed of grinding oxide layer and metallic copper in this step is identical, so it is identical that both height remain, reach predetermined altitude until the height that is ground to metallic copper, reach predetermined second milling time this moment, described predetermined altitude is exactly the height that the Rs of metallic copper reaches desired value.Fig. 4 is the generalized section of first embodiment of the invention in the enterprising row metal copper of the 3rd grinding table abrasive method.
Second embodiment of the invention may further comprise the steps in the enterprising row metal copper of the 3rd grinding table abrasive method:
Preestablish first milling time and second milling time, carry out the first step on inherent the 3rd grinding table of described first milling time and grind, carried out for second step on inherent the 3rd grinding table of described second milling time and grind.Wherein, predefined first milling time and second milling time all are to obtain by testing wafer is carried out test of many times, when grinding reaches first milling time, can observe the wafer that tests by former seed microscope, the metal height on it is higher than the height of oxide layer; When grinding reaches second milling time, can measure metallic copper by the thickness measure board and whether reach predetermined altitude, and whether also can obtain the metal height by former seed microscopic examination equal with the oxide layer height.
The first step: adopt the grinding selectivity ratio of oxide layer and metallic copper greater than 1 lapping liquid, metallic copper is ground, when reaching predetermined first milling time, the height of metallic copper is higher than the height of oxide layer, carried out for second step then: adopt the grinding selectivity ratio of metallic copper and oxide layer greater than 1 lapping liquid, metallic copper is ground, reach predetermined altitude until the height of metallic copper.Grinding can be removed barrier layer and partial oxidation layer gradually, and part metals copper.The grinding selectivity ratio of general oxide layer and metallic copper is an oxide layer: metallic copper＞1.2: 1, owing to grind the speed of the speed of oxide layer greater than abrasive metal copper, so a certain moment, become the outstanding structure of copper by original copper depression structure, as shown in Figure 5, reach predetermined first milling time this moment, so finish first grinding steps, begin to carry out second grinding steps: the speed of selection grinding copper is ground greater than the lapping liquid of oxide layer, in process of lapping, constantly reduce the difference in height between metallic copper and the oxide layer, the outstanding structure mill with copper is low gradually, and guarantee that metallic copper just keeps equal with oxide layer when second milling time is scheduled in arrival.Fig. 5 is the generalized section of second embodiment of the invention in the enterprising row metal copper of the 3rd grinding table abrasive method.
Need to prove, the present invention is to be example with abrasive metal copper, to be divided in the grinding on the 3rd grinding table two the step carry out, obviously, for the metal that grinds other any kind ofs, as tungsten, aluminium etc.,, can reach purpose of the present invention equally by being controlled at the grinding selectivity ratio of lapping liquid on the 3rd grinding table.Lapping liquid than different, means lapping liquid product difference, so only need select different lapping liquid products to get final product to the selection of oxide layer and metallic copper.
In sum, chemical and mechanical grinding method of the present invention in prior art, is finished in the 3rd grinding table previous step, selects to carry out step by step than different lapping liquids but adopt.According to actual conditions, because generally after through second grinding table, the structure that the metal depression can occur, so the first step that the present invention carries out on the 3rd grinding table adopts the grinding selectivity ratio of oxide layer and metal is ground oxide layer and metal greater than 1 lapping liquid, second step adopted the grinding selectivity ratio to oxide layer and metal to be not more than 1 lapping liquid oxide layer and metal is ground, finally make the Rs value of metal reach desired value, and realized ideal flat structure as shown in Figure 3.
The above only is preferred embodiment of the present invention, and is in order to restriction the present invention, within the spirit and principles in the present invention not all, any modification of being made, is equal to replacement, improvement etc., all should be included within the scope of protection of the invention.
Claims (6)
1. the method for a cmp metal, be included in lead on first grinding table grinding, grind to remove above the groove remaining metal on second grinding table and on the 3rd grinding table abrasive metal reach predetermined altitude, remove the barrier layer simultaneously and keep the step identical with the metal height with the predetermined thickness oxide layer, it is characterized in that, when grinding on the 3rd grinding table, this method comprises:
Preestablish first milling time and second milling time, carry out the first step on inherent the 3rd grinding table of described first milling time and grind, carried out for second step on inherent the 3rd grinding table of described second milling time and grind;
Employing is ground oxide layer and metal greater than 1 lapping liquid the grinding selectivity ratio of oxide layer and metal, when reaching predetermined first milling time, employing is not more than 1 lapping liquid to the grinding selectivity ratio of oxide layer and metal oxide layer and metal is ground, when reaching predetermined second milling time, metal reaches predetermined thickness, and maintenance is identical with the oxide layer height.
2. the method for claim 1 is characterized in that, described grinding is when reaching predetermined first milling time, and the height of metal and oxide layer is equal;
In described predetermined second milling time, adopt grinding selectivity ratio to oxide layer and metal to equal 1 lapping liquid oxide layer and metal are ground.
3. method as claimed in claim 2, it is characterized in that, definite method of first milling time is: testing wafer is adopted on the 3rd grinding table the grinding selectivity ratio of oxide layer and metal is ground greater than 1 lapping liquid, when the height that measures metal and oxide layer is equal, the used time is defined as first milling time; Described testing wafer has identical abrasive structure with the product wafer;
Definite method of second milling time is: adopt grinding selectivity ratio to oxide layer and metal to equal 1 lapping liquid on the 3rd grinding table testing wafer and grind, reach predetermined altitude when measuring metal, and when equal, the used time is defined as second milling time with the oxide layer height.
4. the method for claim 1 is characterized in that, described grinding is when reaching predetermined first milling time, and the height of metal is higher than the height of oxide layer;
In described predetermined second milling time, adopt the grinding selectivity ratio of oxide layer and metal is ground oxide layer and metal less than 1 lapping liquid.
5. method as claimed in claim 4, it is characterized in that, definite method of first milling time is: testing wafer is adopted on the 3rd grinding table the grinding selectivity ratio of oxide layer and metal is ground greater than 1 lapping liquid, when the height that measures metal is higher than the height of oxide layer, the used time is defined as first milling time; Described testing wafer has identical abrasive structure with the product wafer;
Definite method of second milling time is: testing wafer is adopted on the 3rd grinding table the grinding selectivity ratio of oxide layer and metal is ground less than 1 lapping liquid, reach predetermined altitude when measuring metal, and when equal, the used time is defined as second milling time with the oxide layer height.
6. the method for claim 1 is characterized in that, when described metal is copper, described grinding selectivity ratio to oxide layer and metallic copper greater than the selection of 1 lapping liquid than for greater than 1.2.
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| CN 201010217863 CN102294648B (en) | 2010-06-23 | 2010-06-23 | Method for chemically and mechanically polishing metals |
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| CN 201010217863 CN102294648B (en) | 2010-06-23 | 2010-06-23 | Method for chemically and mechanically polishing metals |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105563299A (en) * | 2014-11-05 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method for metal |
| CN105914143A (en) * | 2016-05-06 | 2016-08-31 | 中国科学院微电子研究所 | Chemico-mechanical polishing planarization method |
| CN106002603A (en) * | 2016-05-30 | 2016-10-12 | 上海华力微电子有限公司 | Copper grinding method and system |
| CN112247825A (en) * | 2020-09-04 | 2021-01-22 | 北京烁科精微电子装备有限公司 | Chip grinding method |
| CN115000010A (en) * | 2022-08-08 | 2022-09-02 | 广州粤芯半导体技术有限公司 | Method for forming contact plug |
Families Citing this family (1)
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| CN103862364A (en) * | 2014-03-24 | 2014-06-18 | 上海华力微电子有限公司 | Grinding pad, grinding machine table and grinding method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1755901A (en) * | 2004-09-29 | 2006-04-05 | 联华电子股份有限公司 | Chemical mechanical polishing technique |
| CN1861321A (en) * | 2006-06-09 | 2006-11-15 | 河北工业大学 | Method for controlling planeness during chemically mechanical polishing for ULSI multiple-layered copper wiring |
| US20080032606A1 (en) * | 2006-06-09 | 2008-02-07 | Yuling Liu | Method for controlling the dishing problem associated with chemical-mechanical planarization (cmp) during manufacture of copper multilayer interconnection structures in ultra large-scale integrated circuits (ulsi) |
-
2010
- 2010-06-23 CN CN 201010217863 patent/CN102294648B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1755901A (en) * | 2004-09-29 | 2006-04-05 | 联华电子股份有限公司 | Chemical mechanical polishing technique |
| CN1861321A (en) * | 2006-06-09 | 2006-11-15 | 河北工业大学 | Method for controlling planeness during chemically mechanical polishing for ULSI multiple-layered copper wiring |
| US20080032606A1 (en) * | 2006-06-09 | 2008-02-07 | Yuling Liu | Method for controlling the dishing problem associated with chemical-mechanical planarization (cmp) during manufacture of copper multilayer interconnection structures in ultra large-scale integrated circuits (ulsi) |
Non-Patent Citations (2)
| Title |
|---|
| 俞栋梁等,1: "铜化学机械抛光工艺中碟形缺陷的优化", 《电子与封装》, vol. 8, no. 04, 20 April 2008 (2008-04-20), pages 29 - 31 * |
| 苏艳勤等,1: "ULSI中多层Cu布线CMP表面粗糙度的分析和研究", 《半导体技术》, no. 08, 3 August 2009 (2009-08-03), pages 730 - 733 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105563299A (en) * | 2014-11-05 | 2016-05-11 | 中芯国际集成电路制造(上海)有限公司 | Chemical mechanical polishing method for metal |
| CN105563299B (en) * | 2014-11-05 | 2017-12-01 | 中芯国际集成电路制造(上海)有限公司 | The chemical and mechanical grinding method of metal |
| CN105914143A (en) * | 2016-05-06 | 2016-08-31 | 中国科学院微电子研究所 | Chemico-mechanical polishing planarization method |
| CN106002603A (en) * | 2016-05-30 | 2016-10-12 | 上海华力微电子有限公司 | Copper grinding method and system |
| CN112247825A (en) * | 2020-09-04 | 2021-01-22 | 北京烁科精微电子装备有限公司 | Chip grinding method |
| CN115000010A (en) * | 2022-08-08 | 2022-09-02 | 广州粤芯半导体技术有限公司 | Method for forming contact plug |
| CN115000010B (en) * | 2022-08-08 | 2022-11-11 | 广州粤芯半导体技术有限公司 | Method for forming contact plug |
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