CN102290418A - Electrostatic discharge protection device - Google Patents
Electrostatic discharge protection device Download PDFInfo
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- CN102290418A CN102290418A CN2010102042636A CN201010204263A CN102290418A CN 102290418 A CN102290418 A CN 102290418A CN 2010102042636 A CN2010102042636 A CN 2010102042636A CN 201010204263 A CN201010204263 A CN 201010204263A CN 102290418 A CN102290418 A CN 102290418A
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Abstract
The invention relates to an electrostatic discharge protection device for providing an electrostatic discharge path between a first circuit and a second circuit. The electrostatic discharge protection device comprises a first doped region, a first well region, a second doped region and a third doped region, wherein the first doped region has a first conduction type; the first well region has a second conduction type opposite to the first conduction type; the second doped region and the third doped region are positioned in the first well region; the second doped region and the third doped region respectively have the first conduction type and the second conduction type; the first doped region is coupled to a power supply end or an earth terminal of the first circuit; and both the second doped region and the third doped region are correspondingly coupled to a power supply end or an earth terminal of the second circuit. After the electrostatic discharge protection device is adopted, the electrostatic discharge path is provided for the two connected circuits, and a semiconductor device is effectively protected from being threatened by ESD (Electronic Static Discharge).
Description
Technical field
The present invention relates to circuit protection device, more particularly, relate to electrostatic discharge protective equipment.
Background technology
Semiconductor device manufacture, process, assemble, transport, in the process such as use, whole flow process all can suffer the ESD (abbreviation of Electro-Staticdischarge, be static discharge) threat, if no suitable safeguard procedures, semiconductor device will be damaged and can't sell.
As shown in Figure 1a, be coupled to two circuit 20a and 20b between first electric power incision element 50 comprise the second diode series mould set 54 of the first diode series mould set 52 and the conducting of opposite direction in parallel with it, wherein the first diode series mould set 52 is in series by two first diode 52a, and the second diode series mould set 54 is in series by two second diode 54a.
Above-mentioned first electric power incision element 50 be coupled to the power source supply end VCC 1/ earth terminal GND 1 of circuit 20a and circuit 20b power source supply end VCC 2/ earth terminal GND 2 between, in order between the power source supply end VCC of the power source supply end VCC of circuit 20a 1/ earth terminal GND 1 and circuit 20b 2/ earth terminal GND 2, to provide an electrostatic discharging path.
For instance, when the power source supply end VCC of circuit 20a 1/ earth terminal GND 1 suffers the bombardment of ESD, the first diode series mould set 52 that can be considered first electric power incision element 50 applies forward bias voltage drop and makes 50 conductings of first electric power incision element, a large amount of ESD transient currents is passed to the power source supply end VCC 2/ earth terminal GND 2 of circuit 20b via first electric power incision element, 50 correspondences.
Perhaps, when the power source supply end VCC 2/ earth terminal GND 2 of circuit 20b suffers the bombardment of static discharge, also can conducting first electric power incision element 50 a large amount of ESD transient currents be cut the power source supply end VCC 1/ earth terminal GND 1 that element 50 correspondences are passed to circuit 20a via first electric power.
Therefore, protected element 10a among the circuit 20a or the protected element 10b among the circuit 20b can not be subjected to the threat of static discharge and be caused losing efficacy by the electrostatic induced current damage.In addition, first electric power incision element 50 that is made of diode can have the effect of obstruct from the adjacent circuit noise when not conducting.
Be depicted as the schematic equivalent circuit of first electric power incision element 50 as Fig. 1 b.Because existing first electric power incision element 50 is made of the PN diode that is positioned at n type wellblock or p type wellblock, thereby have dead resistance usually in the wellblock.
Shown in 1b figure, the equivalent electric circuit of the diode 52a of diode series mould set 52 can be considered a diode 52a of not having an impedance
1Series connection dead resistance 52a
2, and the equivalent electric circuit of the diode 54a of diode series mould set 54 can be considered a diode 54a of not having an impedance
1A dead resistance 54a connects
2Yet above-mentioned dead resistance can stop the circulation of ESD transient current, and if when reducing conducting the dead resistance of first electric power incision element 50 and strengthen the area of wellblock, the element entire area is increased, can't reach the requirement of high component density.
Be illustrated in figure 2 as the circuit diagram of known second electric power incision element 30.In order to reduce the dead resistance of electric power incision element, can utilize the MOS 34 of metal-oxide semiconductor (MOS) MOS 32 conductings in the other direction in parallel to constitute second electric power incision element 30.
When the ESD transient current greater than MOS (Metal-Oxide-Semiconductor, that is: during Metal-oxide-semicondutor) starting voltage, can make MOS 32 or MOS 34 conductings, a large amount of ESD transient currents is passed to the power source supply end VCC 2/ earth terminal GND 2 of another circuit via second electric power incision element 30 from power source supply end VCC 1/ earth terminal GND 1 correspondence of one of them circuit.
Because the output impedance when MOS 32 or MOS 34 conductings is much smaller than the dead resistance 52a of first electric power incision element 50 that is made of diode
2Or 54a
2, therefore second electric power incision element 30 can transmit bigger transient current.In addition, MOS 32 or MOS 34 starting voltages own also help to intercept the effect from the adjacent circuit noise.
Yet the output impedance of second electric power incision element 30 can make the element entire area increase to promote the effect of transmitting the ESD transient current when reducing conducting, can't reach the requirement of high component density.In this technical field, need a kind of electrostatic discharge protective equipment of high component density, have when conducting that resistance is to promote the effect of transmitting the ESD transient current in the lower conducting, the effect that provides preferable noise to intercept when not conducting is to improve above-mentioned shortcoming.
Summary of the invention
The technical problem to be solved in the present invention is; at the output impedance of prior art above-mentioned electric power incision element when reducing conducting to promote the effect of transmitting the ESD transient current; make the increase of element entire area can't reach the defective of high component density, a kind of electrostatic discharge protective equipment is provided.
The technical solution adopted for the present invention to solve the technical problems one is: construct a kind of electrostatic discharge protective equipment, in order to provide electrostatic discharging path between first circuit and second circuit, this electrostatic discharge protective equipment comprises: first doped region: have first conduction type; First wellblock: have second conduction type in contrast to this first conduction type; Second doped region and the 3rd doped region: be arranged in this first wellblock, described second doped region and the 3rd doped region have first conduction type and second conduction type respectively; Described first doped region is coupled to the power source supply end or the earth terminal of first circuit, all corresponding power source supply end or the earth terminal that is coupled to second circuit of described second doped region and the 3rd doped region.
The technical solution adopted for the present invention to solve the technical problems two is: construct a kind of electrostatic discharge protective equipment, in order between first circuit and second circuit, to provide electrostatic discharging path, it is characterized in that, this electrostatic discharge protective equipment comprises: at least two sub-devices of electrostatic discharge (ESD) protection, and the sub-device of described electrostatic discharge (ESD) protection comprises: first doped region: have first conduction type; First wellblock: have second conduction type in contrast to described first conduction type; Second doped region and the 3rd doped region: be arranged in described first wellblock; described second doped region and the 3rd doped region have first conduction type and second conduction type respectively; second doped region of first doped region of the sub-device of one of them electrostatic discharge (ESD) protection and the sub-device of another electrostatic discharge (ESD) protection and the 3rd doped region all are coupled to the power source supply end or the earth terminal of described first circuit, and all corresponding power source supply end or the earth terminal that is coupled to second circuit of first doped region of second doped region of the sub-device of one of them electrostatic discharge (ESD) protection and the 3rd doped region and the sub-device of another electrostatic discharge (ESD) protection.
The technical solution adopted for the present invention to solve the technical problems three is: construct a kind of electrostatic discharge protective equipment, in order to provide electrostatic discharging path between first circuit and second circuit, described electrostatic discharge protective equipment comprises: first doped region: have first conduction type; Second doped region and the 3rd doped region: have first conduction type and second conduction type respectively; Described first doped region is coupled to the power source supply end or the earth terminal of first circuit, all corresponding power source supply end or the earth terminal that is coupled to second circuit of described second doped region and the 3rd doped region.
The technical solution adopted for the present invention to solve the technical problems four is: construct a kind of electrostatic discharge protective equipment, in order to provide electrostatic discharging path between first circuit and second circuit, described electrostatic discharge protective equipment comprises: first doped region: have first conduction type; Second doped region and the 3rd doped region: have first conduction type and second conduction type respectively; Second doped region of first doped region of the sub-device of one of them electrostatic discharge (ESD) protection and the sub-device of another electrostatic discharge (ESD) protection and power source supply end or the earth terminal that the 3rd doped region all is coupled to first circuit, and all corresponding power source supply end or the earth terminal that is coupled to second circuit of first doped region of second doped region of the sub-device of one of them electrostatic discharge (ESD) protection and the 3rd doped region and the sub-device of another electrostatic discharge (ESD) protection.
Implement electrostatic discharge protective equipment of the present invention; have following beneficial effect: described electrostatic discharge protective equipment provides electrostatic discharging path for interconnected two circuit; effectively protected semiconductor device not to be subjected to the threat of ESD; and do not increasing under the prerequisite that the element entire area realizes high component density, reducing in the shop output impedance of incision element and reached and promote the effect of transmitting the ESD transient current.
Description of drawings
The invention will be further described below in conjunction with drawings and Examples, in the accompanying drawing:
Fig. 1 a is the schematic diagram of existing first electric power incision element;
Fig. 1 b is the schematic equivalent circuit of the incision of electric power shown in Fig. 1 a element;
Fig. 2 is the circuit diagram of existing second electric power incision element;
Fig. 3 is the schematic diagram of electrostatic discharge protective equipment specific embodiment of the present invention;
Fig. 4 a is the generalized section of electrostatic discharge protective equipment first embodiment of the present invention;
Fig. 4 b is the generalized section of electrostatic discharge protective equipment second embodiment of the present invention;
Fig. 4 c is the schematic equivalent circuit of Fig. 4 a and Fig. 4 b;
Fig. 5 a is the generalized section of electrostatic discharge protective equipment the 3rd embodiment of the present invention;
Fig. 5 b is the generalized section of electrostatic discharge protective equipment the 4th embodiment of the present invention;
Fig. 5 c is the schematic equivalent circuit of Fig. 5 a and Fig. 5 b;
Fig. 6 a is the generalized section of electrostatic discharge protective equipment the 5th embodiment of the present invention;
Fig. 6 b is the generalized section of electrostatic discharge protective equipment the 6th embodiment of the present invention;
Fig. 6 c is the schematic equivalent circuit of Fig. 6 a and Fig. 6 b;
Fig. 7 a is the generalized section of electrostatic discharge protective equipment the 7th embodiment of the present invention;
Fig. 7 b is the generalized section of electrostatic discharge protective equipment the 8th embodiment of the present invention;
Fig. 7 c is the schematic equivalent circuit of Fig. 7 a and Fig. 7 b.
Embodiment
Below introduce each embodiment with reference to the accompanying drawings in detail, as reference frame of the present invention.In graphic or specification were described, similar or same section all used same reference numbers.And in Figure of description, the shape of embodiment or thickness can enlarge, and are simplified with convenient to indicate.Moreover, the part of each element will be to describe explanation respectively in graphic, it should be noted that, the element that does not illustrate among the figure or describe, for having the form of knowing usually known to the knowledgeable in the affiliated technical field, in addition, only for disclosing the ad hoc fashion that the present invention uses, it is not in order to limit the present invention to certain embodiments.
As shown in Figure 3; electrostatic discharge protective equipment 500 in the embodiment of the invention can be arranged at the first circuit 250a and second circuit 250b between; for example be coupled to the power source supply end VCC1 of the first circuit 250a and the power source supply end VCC 2 of second circuit 250b, or be coupled to the earth terminal GND 1 of the first circuit 250a and the earth terminal GND 2 of second circuit 250b.
As shown in Figure 3, the power source supply end of the first circuit 250a and second circuit 250b and earth terminal between have protected element 150a and 150b respectively.Electrostatic discharge protective equipment 500 in the embodiment of the invention is in order to provide electrostatic discharging path, so that protected element 150a or 150b can not be subjected to the threat of static discharge and be caused losing efficacy by the electrostatic induced current damage between the first circuit 250a and second circuit 250b.
First embodiment:
Shown in Fig. 4 a, the electrostatic discharge protective equipment 500a system in the embodiment of the invention is arranged in the substrate 200.Electrostatic discharge protective equipment 500a comprises first doped region 202, is arranged at second doped region 204 and the 3rd doped region 206 in first wellblock 208; wherein first doped region 202 can be coupled to power source supply end VCC 1 or the earth terminal GND 1 of the first circuit 250a as shown in Figure 3, and second doped region 204 and the 3rd doped region 206 all can corresponding be coupled to power source supply end VCC 2 or the earth terminal GND 2 of second circuit 250b as shown in Figure 3.
For instance, if when first doped region 202 is coupled to the power source supply end VCC 1 of the first circuit 250a as shown in Figure 3, all corresponding power source supply end VCC 2 that is coupled to second circuit 250b as shown in Figure 3 of second doped region 204 and the 3rd doped region 206 then.Perhaps, if when first doped region 202 is coupled to the earth terminal GND 1 of the first circuit 250a as shown in Figure 3, all corresponding earth terminal GND 2 that is coupled to second circuit 250b as shown in Figure 3 of second doped region 204 and the 3rd doped region 206 then.
Shown in Fig. 4 a; first doped region 202, second doped region 204 and the 3rd doped region 206 of electrostatic discharge protective equipment 500a in the embodiment of the invention is to separate each other by the isolated thing 201 of a plurality of shallow trenchs, and first doped region 202, second doped region 204 and the 3rd doped region 206 all are adjacent to the surface of substrate 200.
In embodiments of the present invention, substrate 200 can be the silicon substrate.In other embodiments, can utilize on germanium silicon, bulk semiconductor, strain semiconductor, compound semiconductor, the insulating barrier and cover silicon, or other semiconductor substrates commonly used.Substrate 200 can implantable p type or n type impurity, to need to change its conduction type at design.In embodiments of the present invention, the conduction type of substrate 200 can for example be the p type.In embodiments of the present invention, the conduction type of first doped region 202 and second doped region 204 can be identical with the conduction type of substrate 200, and the conduction type of the 3rd doped region 206 and first wellblock 208 can with the conductivity type opposite of substrate 200.In addition, the dopant concentration of first doped region 202 and second doped region 204 is greater than the dopant concentration of substrate 200, and the dopant concentration of the 3rd doped region 206 is greater than the dopant concentration of first wellblock 208.For instance, if substrate 200 is a p type substrate, the conduction type of first doped region 202 and second doped region 204 then is the p type, and the conduction type of the 3rd doped region 206 and first wellblock 208 then is the n type.
Therefore; in the first embodiment of the present invention; shown in Fig. 4 a; if the conduction type of substrate 200 is the p type; can be considered by for example p type-n type-p type at electrostatic discharge protective equipment 500a and to meet face two-carrier electric crystal 500a (PNPbipolarjunctiontransistor is hereinafter to be referred as PNPBJT) for first doped region 202 of p type doped region, the parasitism that for example constitutes for second doped region 204 of the 3rd doped region 206 of first wellblock 208 of n type wellblock, for example n type doped region and for example p type doped region.
Wherein p type first doped region 202 can be considered the emitter-base bandgap grading of the PNPBJT500a of above-mentioned parasitism, n type first wellblock 208 and n type the 3rd doped region 206 can be considered the base stage of the PNPBJT500a of above-mentioned parasitism respectively, and p type second doped region 204 can be considered the collection utmost point of the PNPBJT500a of above-mentioned parasitism.
Shown in Fig. 4 c, wherein resistance 401 can be considered the interior resistance of conducting of first wellblock 208.Because the base stage of PNPBJT500a and collection extremely all are coupled to power source supply end VCC 2 or the earth terminal GND 2 of second circuit 250b shown in Figure 3, so in actual operation, the influence of resistance 401 can be left in the basket, that is, the resistance 401 of Fig. 4 c can omit.
Second embodiment:
Shown in Fig. 4 b, first doped region 202 also can be arranged in first wellblock 208 simultaneously with second doped region 204 and the 3rd doped region 206.If the conduction type of substrate 200 is the p type, can be considered by for example p type-n type-p type at electrostatic discharge protective equipment 500b and to meet face two-carrier electric crystal 500b for first doped region 202 of p type doped region, the parasitism that for example constitutes for second doped region 204 of the 3rd doped region 206 of first wellblock 208 of n type wellblock, for example n type doped region and for example p type doped region.
Wherein p type first doped region 202 can be considered the emitter-base bandgap grading of the PNPBJT500b of above-mentioned parasitism, n type first wellblock 208 and n type the 3rd doped region 206 can be considered the base stage of the PNPBJT500b of above-mentioned parasitism respectively, and p type second doped region 204 can be considered the collection utmost point of the PNPBJT500b of above-mentioned parasitism.
Be similar to electrostatic discharge protective equipment 500a, shown in Fig. 4 c, the equivalent electric circuit of electrostatic discharge protective equipment 500b is identical with the equivalent electric circuit of electrostatic discharge protective equipment 500a.Similarly, because the base stage of PNPBJT500b and collection extremely all are coupled to power source supply end VCC 2 or the earth terminal GND 2 of second circuit 250b shown in Figure 3, so in actual operation, the influence of resistance 401 can be left in the basket.
Electrostatic discharge protective equipment 500a or 500b can be coupled to power source supply end VCC 1 and the VCC 2 of the first circuit 250a and second circuit 250b respectively; wherein first doped region 202 is the power source supply end VCC 1 that is coupled to the first circuit 250a as shown in Figure 3, and all corresponding power source supply end VCC 2 that is coupled to second circuit 250b as shown in Figure 3 of second doped region 204 and the 3rd doped region 206.
When the power source supply end VCC 1 of the first circuit 250a high voltage of a static discharge occurs suddenly, can be considered the indirect forward bias voltage drop of emitter-base bandgap grading-base stage of the PNPBJT500a of above-mentioned parasitism or 500b and base stage-collection interpolar connects reverse bias, this mode of operation, we are called forward initiatively bias voltage.
When the power source supply end VCC 1 of the first circuit 250a suffers the bombardment of ESD, the PNPBJT500a of above-mentioned parasitism or 500b can form the path from the power source supply end VCC 1 of the first circuit 250a to the power source supply end VCC 2 of second circuit 250b, and therefore a large amount of electric currents can inject the base stage (n type first wellblock 208 and n type the 3rd doped region 206) and the collection utmost point (p type second doped region 204) by emitter-base bandgap grading (p type first doped region 202).
Hence one can see that; a large amount of ESD transient currents can be via electrostatic discharge protective equipment 500a or 500b; be transmitted to the power source supply end VCC 2 of second circuit 250b by the power source supply end VCC 1 of the first circuit 250a, to reduce the voltage difference of power source supply end VCC 1 and power source supply end VCC 1.
In addition, when the voltage of the Electrostatic Discharge of the power source supply end VCC 1 that comes across the first circuit 250a during less than the conducting voltage of the PNPBJT500a of parasitism or 500b, the PNPBJT500a of above-mentioned parasitism or 500b can have the effect that noise intercepts.
Similarly; electrostatic discharge protective equipment 500a or 500b can be coupled to earth terminal GND 1 and the GND 2 of the first circuit 250a and second circuit 250b respectively; wherein first doped region 202 is the earth terminal GND 1 that is coupled to the first circuit 250a as shown in Figure 3, and all corresponding earth terminal GND 2 that is coupled to second circuit 250b as shown in Figure 3 of second doped region 204 and the 3rd doped region 206.
When the earth terminal GND 1 of the first circuit 250a suffers the bombardment of ESD; a large amount of ESD transient currents can be via electrostatic discharge protective equipment 500a or 500b; be transmitted to the earth terminal GND 2 of second circuit 250b by the earth terminal GND1 of the first circuit 250a, to reduce the voltage difference of earth terminal GND 1 and earth terminal GND2.In addition, when the voltage of the Electrostatic Discharge of the earth terminal GND 1 that comes across the first circuit 250a during less than the conducting voltage of the PNPBJT500a of parasitism or 500b, the PNPBJT500a of above-mentioned parasitism or 500b can have the effect that noise intercepts.
In following each embodiment, each element if any with same or analogous part shown in 4a to the 4c figure, then can not do repeat specification at this with reference to the relevant narration of front.
The 3rd embodiment:
Because ESD may occur at power source supply end VCC 1, also may occur at power source supply end VCC 2.Therefore; electrostatic discharge protective equipment 500a shown in Fig. 4 a or Fig. 4 b or 500b can distinguish the electrostatic discharge protective equipment of in parallel one conducting in the other direction, to provide protection to the static discharge phenomenon that may appear at power source supply end VCC 1 or power source supply end VCC 2.
Shown in Fig. 5 a; electrostatic discharge protective equipment 500c is made of the sub-device 500a2 of electrostatic discharge (ESD) protection of the sub-device 500a1 of electrostatic discharge (ESD) protection in parallel one conducting in the other direction, and wherein the electrostatic discharge protective equipment 500a shown in the sub-device 500a1 of electrostatic discharge (ESD) protection and 500a2 and Fig. 4 a has identical structure.
Shown in Fig. 5 a, the formation position of the first doped region 202a1 and 202a2, the second doped region 204a1 and 204a2, the 3rd doped region 206a1 and 206a2 and the first wellblock 208a1 and 208a2 is identical with first doped region 202 of electrostatic discharge protective equipment 500a shown in Fig. 4 a, second doped region 204, the 3rd doped region 206 and first wellblock 208 respectively with conduction type.
Shown in Fig. 5 a; the first doped region 202a1 of the sub-device 500a1 of electrostatic discharge (ESD) protection and the second doped region 204a2 of the sub-device 500a2 of electrostatic discharge (ESD) protection and the 3rd doped region 206a2 system are coupled to the power source supply end VCC 1 of the first circuit 250a simultaneously, and the first doped region 202a2 of the second doped region 204a1 of the sub-device 500a1 of electrostatic discharge (ESD) protection and the 3rd doped region 206a1 and the sub-device 500a2 of electrostatic discharge (ESD) protection system is coupled to the power source supply end VCC 2 of second circuit 250b simultaneously.
The 4th embodiment:
Shown in Fig. 5 b; electrostatic discharge protective equipment 500d by the sub-device 500b1 of electrostatic discharge (ESD) protection in parallel one conducting in the other direction the sub-device 500b2 of electrostatic discharge (ESD) protection constitute, wherein the electrostatic discharge protective equipment 500b shown in the sub-device 500b1 of electrostatic discharge (ESD) protection and 500b2 and Fig. 4 b has identical structure.
Shown in Fig. 5 b, the formation position of the first doped region 202b1 and 202b2, the second doped region 204b1 and 204b2, the 3rd doped region 206b1 and 206b2 and the first wellblock 208b1 and 208b2 is identical with first doped region 202, second doped region 204, the 3rd doped region 206 and first wellblock 208 of electrostatic discharge protective equipment 500 shown in Fig. 4 b respectively with conduction type.
Shown in Fig. 5 b; the first doped region 202b1 of the sub-device 500b1 of electrostatic discharge (ESD) protection and the second doped region 204b2 of the sub-device 500b2 of electrostatic discharge (ESD) protection and the 3rd doped region 206b2 system are coupled to the power source supply end VCC 1 of the first circuit 250b simultaneously, and the first doped region 202b2 of the second doped region 204b1 of the sub-device 500b1 of electrostatic discharge (ESD) protection and the 3rd doped region 206b1 and the sub-device 500b2 of electrostatic discharge (ESD) protection system is coupled to the power source supply end VCC 2 of second circuit 250b simultaneously.
In other embodiments of the invention, static discharge also may occur at the earth terminal GND1 of the first circuit 250a, also may or the earth terminal GND 2 of second circuit 250b occur.Therefore; electrostatic discharge protective equipment 500c can be coupled to earth terminal GND 1 and the GND 2 of the first circuit 250a and second circuit 250b respectively; wherein the second doped region 204a2 of the first doped region 202a1 of the sub-device 500a1 of electrostatic discharge (ESD) protection and the sub-device 500a2 of electrostatic discharge (ESD) protection and the 3rd doped region 206a2 system is coupled to the earth terminal GND 1 of the first circuit 250a simultaneously; and the first doped region 202a2 of the second doped region 204a1 of the sub-device 500a1 of electrostatic discharge (ESD) protection and the 3rd doped region 206a1 and the sub-device 500a2 of electrostatic discharge (ESD) protection system is coupled to the earth terminal GND 2 of second circuit 250b simultaneously, to provide protection to the static discharge phenomenon that may appear at earth terminal GND 1 or earth terminal GND 2.
Fig. 5 c is electrostatic discharge protective equipment 500c and the 500d schematic equivalent circuit of 5a and 5b figure.Electrostatic discharge protective equipment 500c shown in 5a or 5b figure or 500d can be considered the electrostatic discharge protective equipment that the PNPBJT500a1 of two conductings in the other direction and 500a2 or PNPBJT500b1 and 500b2 are formed in parallel, and wherein the resistance 501 among Fig. 5 c can be considered resistance in the conducting of the n type first wellblock 208a1,208a2,208b1 or 208b2.
Because the base stage of PNPBJT500a1 and collection extremely all are coupled to power source supply end VCC 2 or the earth terminal GND 2 of second circuit 250b shown in Figure 3, and, the base stage of PNPBJT500a2 and collection extremely all are coupled to power source supply end VCC 1 or the earth terminal GND 1 of the first circuit 250a shown in Figure 3, so in actual operation, the influence of resistance 501 can be left in the basket.Similarly, the base stage of PNPBJT500b1 extremely all is coupled to power source supply end VCC 2 or earth terminal GND 2 with collection, and, the base stage of PNPBJT500b2 extremely all is coupled to power source supply end VCC 1 or earth terminal GND 1 with collection, so in actual operation, the influence of resistance 501 can be left in the basket, that is, the resistance 501 among Fig. 5 c can omit.
The electrostatic discharge protective equipment 500c of the embodiment of the invention or 500d can provide protection to the static discharge phenomenon of the power source supply end VCC 2/ earth terminal GND 2 of the power source supply end VCC 1/ earth terminal GND 1 that may appear at the first circuit 250a or second circuit 250b.
When the power source supply end/earth terminal of wherein circuit suffers the bombardment of ESD; a large amount of ESD transient currents can be via electrostatic discharge protective equipment 500c or 500d; power source supply end/earth terminal correspondence by one of them circuit is transmitted to the power source supply end/earth terminal of another circuit, with the voltage difference of power source supply end/earth terminal of reducing by two circuit.
In addition; when electrostatic discharge protective equipment 500c that is formed in parallel less than the PNPBJT of two conductings in the other direction when the voltage of the Electrostatic Discharge of the power source supply end VCC 2/ earth terminal GND 2 of power source supply end VCC 1/ earth terminal GND 1 that comes across the first circuit 250a or second circuit 250b or the conducting voltage of 500d, above-mentioned electrostatic discharge protective equipment 500c or 500d can have the effect that noise intercepts.
Note that, those who are familiar with this art, following in instruction of the present invention is when realizing the electrostatic discharge protective equipment shown in Fig. 5 c in conjunction with the electrostatic discharge protective equipment shown in 4a, the 4b figure.
The 5th embodiment:
Shown in Fig. 6 a, the electrostatic discharge protective equipment 500e system in the embodiment of the invention is arranged in the substrate 200.Electrostatic discharge protective equipment 500e comprises the 4th doped region 212, the 5th doped region 214 and the 6th doped region 216 that separates each other by the isolated thing 201 of shallow trench; wherein the 4th doped region 212 can be coupled to earth terminal GND 1, the five doped region 214 of the first circuit 250a as shown in Figure 3 and the earth terminal GND 2 that the 6th doped region 216 all can corresponding be coupled to second circuit 250b as shown in Figure 3.
Fig. 6 b is the generalized section of the electrostatic discharge protective equipment 500f of another embodiment of the present invention.The 4th doped region 212 is arranged in second wellblock 218.
In the embodiment shown in 6a and 6b figure, the conduction type of the 4th doped region 212, the 5th doped region 214 and second wellblock 218 can with the conductivity type opposite of substrate 200, and the conduction type of the 6th doped region 216 can be identical with the conduction type of substrate 200.
In addition, the dopant concentration of the 4th doped region 202 and the 5th doped region 214 is greater than the dopant concentration of second wellblock 218, and the dopant concentration of the 6th doped region 216 is greater than the dopant concentration of substrate 200.For instance, if substrate 200 is a p type substrate, the conduction type of the 4th doped region 212, the 5th doped region 214 and second wellblock 218 then is the n type, and the conduction type of the 6th doped region 216 then is the p type.
Therefore; in the embodiment shown in Fig. 6 a; if the conduction type of substrate 200 is the p type; can be considered by meeting face two-carrier electric crystal 500e (NPNbipolarjunctiontransistor is hereinafter to be referred as NPNBJT) with the n type-p type-n type of a parasitism of the 5th doped region 214 formations of for example n type doped region at electrostatic discharge protective equipment 500e for the 4th doped region 212 of n type doped region, p type substrate 200.
Wherein n type the 4th doped region 212 can be considered the emitter-base bandgap grading of the NPNBJT500e of above-mentioned parasitism, p type substrate 200 and the 6th doped region 216 can be considered the base stage of the NPNBJT500e of above-mentioned parasitism, and n type the 5th doped region 214 can be considered the collection utmost point of the NPNBJT500e of above-mentioned parasitism.
The 6th embodiment:
In the embodiment shown in Fig. 6 b; if the conduction type of substrate 200 is the p type, can be considered by n type-p type-n type at electrostatic discharge protective equipment 500f and to meet face two-carrier electric crystal 500f for the 4th doped region 212 of n type doped region, n type second wellblock 218, the parasitism that for example constitutes for the 5th doped region 214 of second wellblock 218 of n type wellblock, p type substrate 200 and for example n type doped region.
Wherein n type the 4th doped region 212 and n type second wellblock 218 can be considered the emitter-base bandgap grading of the NPNBJT500f of above-mentioned parasitism, p type substrate 200 and the 6th doped region 216 can be considered the base stage of the NPNBJT500f of above-mentioned parasitism, and n type the 5th doped region 214 can be considered the collection utmost point of the NPNBJT500f of above-mentioned parasitism.
Because base stage and the emitter-base bandgap grading of NPNBJT500e, 500f all are coupled to second circuit 250b earth terminal GND 2 shown in Figure 3, so in actual operation, the influence of resistance 601 can be left in the basket, that is, the resistance 601 of Fig. 6 c can omit.
In addition; when the voltage of the Electrostatic Discharge of the earth terminal GND 1 that comes across the first circuit 250a during less than the conducting voltage of the electrostatic discharge protective equipment 500e of above-mentioned for example parasitic NPN BJT or 500f, above-mentioned electrostatic discharge protective equipment 500e or 500f can have the effect that noise intercepts.
Note that; in the embodiment of Fig. 6 a to Fig. 6 c; electrostatic discharge protective equipment system be arranged at the earth terminal GND 1 of the first circuit 250a shown in Figure 3 and second circuit 250b earth terminal GND 2 between; it is following that right those who are familiar with this art work as in instruction of the present invention, electrostatic discharge protective equipment system is arranged at the power source supply end VCC 1 of the first circuit 250a shown in Figure 3 and second circuit 250b power source supply end VCC 2 between.In following each embodiment, each element if any with same or analogous part shown in 6a to the 6c figure, then can not do repeat specification at this with reference to the relevant narration of front.
The 7th embodiment:
7a and 7b figure are the electrostatic discharge protective equipment 500g of other embodiments of the invention and the generalized section of 500h.In other embodiments of the invention, because ESD may occur at earth terminal GND 1 or earth terminal GND 2.
Therefore, electrostatic discharge protective equipment 500e shown in 6a or 6b figure or 500f can distinguish the electrostatic discharge protective equipment of in parallel one conducting in the other direction, to provide protection to the static discharge phenomenon that may appear at earth terminal GND 1 or earth terminal GND 2.
Shown in Fig. 7 a; electrostatic discharge protective equipment 500g by the sub-device 500e1 of electrostatic discharge (ESD) protection in parallel one conducting in the other direction the sub-device 500e2 of electrostatic discharge (ESD) protection constitute, wherein the electrostatic discharge protective equipment 500e shown in the sub-device 500e1 of electrostatic discharge (ESD) protection and 500e2 and Fig. 6 a has identical structure.
Shown in Fig. 7 a, the formation position of the 4th doped region 212e1 and 212e2, the 5th doped region 214e1 and 214e2 and the 6th doped region 216e1 and 216e2 and conduction type are identical with the 4th doped region 212 of electrostatic discharge protective equipment 500e shown in Fig. 6 a, the 5th doped region 214, the 6th doped region 216 respectively.
Shown in Fig. 7 a; when earth terminal GND 1 that is coupled to the first circuit 250a simultaneously when the 5th doped region 214e2 and the 6th doped region 216e2 system of the 4th doped region 212e1 of the sub-device 500e1 of electrostatic discharge (ESD) protection and the sub-device 500e2 of electrostatic discharge (ESD) protection or the earth terminal GND 2 of second circuit 250b, the corresponding simultaneously earth terminal GND 2 of second circuit 250b or the earth terminal GND 1 of the first circuit 250a of being coupled to of the 4th doped region 212e2 system of the 5th doped region 214e1 of the sub-device 500e1 of electrostatic discharge (ESD) protection and the 6th doped region 216e1 and the sub-device 500e2 of electrostatic discharge (ESD) protection.
The 8th embodiment:
Shown in Fig. 7 b; electrostatic discharge protective equipment 500h by the sub-device 500f1 of electrostatic discharge (ESD) protection in parallel one conducting in the other direction the sub-device 500f2 of electrostatic discharge (ESD) protection constitute, wherein the electrostatic discharge protective equipment 500f shown in electrostatic discharge protective equipment 500f1 and 500f2 and Fig. 6 b has identical structure.
Shown in Fig. 7 b, the formation position of the 4th doped region 212f1 and 212f2, the 5th doped region 214f1 and 214f2, the 6th doped region 216f1 and 216f2 and the second wellblock 218f1 and 218f2 is identical with the 4th doped region 212, the 5th doped region 214, the 6th doped region 216 and second wellblock 218 of electrostatic discharge protective equipment 500f shown in Fig. 6 b respectively with conduction type.
Shown in Fig. 7 b; when earth terminal GND 1 that is coupled to the first circuit 250a simultaneously when the 5th doped region 214f2 and the 6th doped region 216f2 system of the 4th doped region 212f1 of the sub-device 500f1 of electrostatic discharge (ESD) protection and the sub-device 500f2 of electrostatic discharge (ESD) protection or the earth terminal GND 2 of second circuit 250b, the corresponding simultaneously earth terminal GND 2 of second circuit 250b or the earth terminal GND 1 of the first circuit 250a of being coupled to of the 4th doped region 212f2 system of the 5th doped region 214f1 of electrostatic discharge protective equipment 500fl and the 6th doped region 216f1 and the sub-device 500f2 of electrostatic discharge (ESD) protection.
Fig. 7 c is electrostatic discharge protective equipment 500g and the 500h schematic equivalent circuit of 7a and 7b figure.Electrostatic discharge protective equipment 500g shown in 7a or 7b figure or 500h can be considered the electrostatic discharge protective equipment that the NPNBJT500e1 of two conductings in the other direction and 500e2 or 500f1 and 500f2 are formed in parallel, and wherein the resistance 701 among Fig. 7 c can be considered resistance in the conducting of p type substrate 200.
Because the base stage of NPNBJT500e1 extremely all is coupled to the earth terminal GND 1 of the first circuit 250a shown in Figure 3 or the earth terminal GND 2 of second circuit 250b with collection, and, the base stage of NPNBJT500e2 extremely all is coupled to the power ground end GND 2 of second circuit 250b shown in Figure 3 or the earth terminal GND 1 of the first circuit 250a with collection, so in actual operation, the influence of resistance 701 can be left in the basket.
Similarly, the base stage of NPNBJT500f1 extremely all is coupled to earth terminal GND 1 or earth terminal GND 2 with collection, and, the base stage of NPNBJT500f2 extremely all is coupled to earth terminal GND 1 or earth terminal GND 2 with collection, so in actual operation, the influence of resistance 701 can be left in the basket, that is, the resistance 701 among Fig. 7 c can omit.
The electrostatic discharge protective equipment 500g of the embodiment of the invention or 500h can provide protection to the static discharge phenomenon of the earth terminal GND 2 of the earth terminal GND 1 that may appear at the first circuit 250a or second circuit 250b.The electrostatic discharge protective equipment 500g of the embodiment of the invention or 500h can provide protection to the static discharge phenomenon of the earth terminal GND 2 of the earth terminal GND 1 that may appear at the first circuit 250a or second circuit 250b.
When the earth terminal of wherein a circuit suffers the bombardment of ESD; a large amount of ESD transient currents can be via electrostatic discharge protective equipment 500g or 500h; be transmitted to the earth terminal of another circuit by the earth terminal correspondence of wherein a circuit, with the voltage difference of the earth terminal that reduces by two circuit.
In addition; when the electrostatic discharge protective equipment 500g of the electrostatic discharge protective equipment that is formed in parallel less than the NPNBJT of above-mentioned two conductings in the other direction when the voltage of the Electrostatic Discharge of the earth terminal GND 2 of earth terminal GND 1 that comes across the first circuit 250a or second circuit 250b or the conducting voltage of 500h, above-mentioned electrostatic discharge protective equipment 500e or 500f can have the effect that noise intercepts.
In the embodiment of Fig. 7 a to Fig. 7 c; electrostatic discharge protective equipment system be arranged at the earth terminal GND 1 of the first circuit 250a shown in Figure 3 and second circuit 250b earth terminal GND 2 between; it is following that right those who are familiar with this art work as in instruction of the present invention, electrostatic discharge protective equipment system is arranged at the power source supply end VCC 1 of the first circuit 250a shown in Figure 3 and second circuit 250b power source supply end VCC 2 between.
Those who are familiar with this art, following in instruction of the present invention is when realizing the electrostatic discharge protective equipment shown in Fig. 7 c in conjunction with the electrostatic discharge protective equipment shown in 6a, the 6b figure.The embodiment of the invention constitute electrostatic discharge protective equipment by the BJT element, its be in order between the power source supply end of two circuit or earth terminal between, so that electrostatic discharging path to be provided, thus can be applied to especially two circuit between electric power incision element.
Compared to the existing electric power incision element that utilizes the MOS element to constitute, the electrostatic discharge protective equipment of for example BJT of the embodiment of the invention has bigger electric current under area identical.Therefore, the electrostatic discharge protective equipment of the embodiment of the invention can provide protection to the static discharge phenomenon of the power source supply end/earth terminal of the power source supply end/earth terminal that may appear at a circuit wherein and another circuit correspondence.
When the power source supply end/earth terminal of wherein a circuit suffers the bombardment of ESD; a large amount of ESD transient currents can be via electrostatic discharge protective equipment; power source supply end/earth terminal correspondence by wherein a circuit is transmitted to the power source supply end/earth terminal of another circuit, with the voltage difference of power source supply end/earth terminal of reducing by two circuit.In addition; when the voltage of the Electrostatic Discharge of the power source supply end/earth terminal that comes across a circuit wherein during less than the conducting voltage of the electrostatic discharge protective equipment that is made of the BJT element of the embodiment of the invention, the electrostatic discharge protective equipment of the embodiment of the invention can have the effect that noise intercepts.Moreover therefore the conducting voltage of the electrostatic discharge protective equipment that for example BJT element of the embodiment of the invention constitutes has better noise barriering effect greater than the existing electric power incision element that utilizes the MOS element to constitute.
The above only is embodiments of the invention; be not so limit claim of the present invention; every equivalent structure transformation that utilizes specification of the present invention and accompanying drawing content to be done, or directly or indirectly be used in other relevant technical fields, all in like manner be included in the scope of patent protection of the present invention.
Claims (22)
1. an electrostatic discharge protective equipment in order to provide electrostatic discharging path between first circuit and second circuit, is characterized in that, this electrostatic discharge protective equipment comprises:
First doped region: have first conduction type; First wellblock: have second conduction type in contrast to this first conduction type; Second doped region and the 3rd doped region: be arranged in this first wellblock, described second doped region and the 3rd doped region have first conduction type and second conduction type respectively;
Described first doped region is coupled to the power source supply end or the earth terminal of first circuit, all corresponding power source supply end or the earth terminal that is coupled to second circuit of described second doped region and the 3rd doped region.
2. electrostatic discharge protective equipment according to claim 1; it is characterized in that; described first doped region, second doped region and the 3rd doped region separate each other by the isolated thing of shallow trench respectively, and described first doped region, second doped region and the 3rd doped region all are adjacent to the surface of substrate.
3. electrostatic discharge protective equipment according to claim 2 is characterized in that, described substrate is a p type substrate, and described first conduction type is the p type, and described second conduction type is the n type.
4. electrostatic discharge protective equipment according to claim 3; it is characterized in that; described first doped region, first wellblock and the second doping fauna constitute p type-n type-p type two-carrier and connect the face electric crystal, and described first doped region, the 3rd doped region and this second doped region are respectively emitter-base bandgap grading, base stage and the collection utmost point that described p type-n type-p type two-carrier connects the face electric crystal.
5. electrostatic discharge protective equipment according to claim 1 is characterized in that, described first doped region is arranged in this first wellblock.
6. an electrostatic discharge protective equipment in order to provide electrostatic discharging path between first circuit and second circuit, is characterized in that, this electrostatic discharge protective equipment comprises: at least two sub-devices of electrostatic discharge (ESD) protection, and the sub-device of described electrostatic discharge (ESD) protection comprises:
First doped region: have first conduction type; First wellblock: have second conduction type in contrast to described first conduction type; Second doped region and the 3rd doped region: be arranged in described first wellblock, described second doped region and the 3rd doped region have first conduction type and second conduction type respectively,
Second doped region of first doped region of the sub-device of one of them electrostatic discharge (ESD) protection and the sub-device of another electrostatic discharge (ESD) protection and the 3rd doped region all are coupled to the power source supply end or the earth terminal of described first circuit, and all corresponding power source supply end or the earth terminal that is coupled to second circuit of first doped region of second doped region of the sub-device of one of them electrostatic discharge (ESD) protection and the 3rd doped region and the sub-device of another electrostatic discharge (ESD) protection.
7. electrostatic discharge protective equipment according to claim 6; it is characterized in that; described first doped region, second doped region and the 3rd doped region separate each other by the isolated thing of shallow trench respectively, and described first doped region, second doped region and the 3rd doped region all are adjacent to the surface of substrate.
8. electrostatic discharge protective equipment according to claim 6 is characterized in that, first wellblock of the sub-device of described electrostatic discharge (ESD) protection separates each other by the isolated thing of shallow trench.
9. electrostatic discharge protective equipment according to claim 7 is characterized in that, described substrate is a p type substrate, and described first conduction type is the p type, and described second conduction type is the n type.
10. electrostatic discharge protective equipment according to claim 8; it is characterized in that; first doped region of the sub-device of described electrostatic discharge (ESD) protection, first wellblock and second doped region constitute p type-n type-p type two-carrier and connect the face electric crystal, and first doped region of the sub-device of described electrostatic discharge (ESD) protection, the 3rd doped region and second doped region are respectively emitter-base bandgap grading, base stage and the collection utmost point that p type-n type-p type two-carrier connects the face electric crystal.
11. electrostatic discharge protective equipment according to claim 6 is characterized in that, first doped region of described electrostatic discharge protective equipment is arranged in described first wellblock.
12. an electrostatic discharge protective equipment in order to provide electrostatic discharging path between first circuit and second circuit, is characterized in that, this electrostatic discharge protective equipment comprises:
First doped region: have first conduction type; Second doped region and the 3rd doped region: have first conduction type and second conduction type respectively;
Described first doped region is coupled to the power source supply end or the earth terminal of first circuit, all corresponding power source supply end or the earth terminal that is coupled to second circuit of described second doped region and the 3rd doped region.
13. electrostatic discharge protective equipment according to claim 12; it is characterized in that; described first doped region, second doped region and the 3rd doped region separate each other by the isolated thing of shallow trench respectively, and described first doped region, second doped region and the 3rd doped region all are adjacent to the surface of substrate.
14. electrostatic discharge protective equipment according to claim 13 is characterized in that, described substrate is a p type substrate, and described first conduction type is the n type, and described second conduction type is the p type.
15. electrostatic discharge protective equipment according to claim 14; it is characterized in that; described first doped region, substrate and the second doping fauna constitute n type-p type-n type two-carrier and connect the face electric crystal, and described first doped region, the 3rd doped region and second doped region are respectively emitter-base bandgap grading, base stage and the collection utmost point that described n type-p type-n type two-carrier connects the face electric crystal.
16. electrostatic discharge protective equipment according to claim 13 is characterized in that, also comprises first wellblock: have first conduction type, described first wellblock surrounds described first doped region.
17. an electrostatic discharge protective equipment in order to provide electrostatic discharging path between first circuit and second circuit, is characterized in that, described electrostatic discharge protective equipment comprises:
First doped region: have first conduction type; Second doped region and the 3rd doped region: have first conduction type and second conduction type respectively;
Second doped region of first doped region of the sub-device of one of them electrostatic discharge (ESD) protection and the sub-device of another electrostatic discharge (ESD) protection and power source supply end or the earth terminal that the 3rd doped region all is coupled to first circuit, and all corresponding power source supply end or the earth terminal that is coupled to second circuit of first doped region of second doped region of the sub-device of one of them electrostatic discharge (ESD) protection and the 3rd doped region and the sub-device of another electrostatic discharge (ESD) protection.
18. electrostatic discharge protective equipment according to claim 17; it is characterized in that; first doped region of the sub-device of described electrostatic discharge (ESD) protection, second doped region and the 3rd doped region separate each other by the isolated thing of shallow trench, and described first doped region, second doped region and the 3rd doped region all are adjacent to the surface of substrate.
19. electrostatic discharge protective equipment according to claim 18 is characterized in that, described substrate is a p type substrate, and described first conduction type is the n type, and described second conduction type is the p type.
20. electrostatic discharge protective equipment according to claim 19; it is characterized in that; first doped region of the sub-device of one of them electrostatic discharge (ESD) protection, substrate and the second doping fauna constitute n type-p type-n type two-carrier and connect the face electric crystal, and wherein said first doped region, the 3rd doped region and second doped region are respectively emitter-base bandgap grading, base stage and the collection utmost point that this n type-p type-n type two-carrier connects the face electric crystal.
21. electrostatic discharge protective equipment according to claim 17 is characterized in that, the sub-device of described electrostatic discharge (ESD) protection also comprises: first wellblock: have this first conduction type, described first wellblock surrounds described first doped region.
22. electrostatic discharge protective equipment according to claim 21 is characterized in that, first wellblock of the sub-device of described electrostatic discharge (ESD) protection separates each other by the isolated thing of shallow trench.
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| CN201010204263.6A CN102290418B (en) | 2010-06-21 | 2010-06-21 | Electrostatic discharge protective equipment |
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| CN1354516A (en) * | 2000-11-16 | 2002-06-19 | 世界先进积体电路股份有限公司 | Static discharge protecting element and related circuit |
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