CN102290328A - Dry etching apparatus - Google Patents
Dry etching apparatus Download PDFInfo
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- CN102290328A CN102290328A CN2011101835334A CN201110183533A CN102290328A CN 102290328 A CN102290328 A CN 102290328A CN 2011101835334 A CN2011101835334 A CN 2011101835334A CN 201110183533 A CN201110183533 A CN 201110183533A CN 102290328 A CN102290328 A CN 102290328A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
A dry etching apparatus is disclosed, which is capable of forming a uniform pattern in a substrate surface, the dry etching apparatus for etching at least one substrate through the use of plasma, comprising the at least one substrate placed on a tray inside a chamber; a susceptor, provided inside the chamber while confronting with the at least one substrate, for supplying a high-frequency power to form the plasma; a grounding part provided beneath the susceptor while being untouchable to the susceptor; and an insulating part provided between the susceptor and the grounding part.
Description
The application is that application number is the dividing an application for the application of " device for dry etching " that " 200910157258.1 ", the applying date be on July 3rd, 2009, denomination of invention.
Technical field
The present invention relates to a kind of device for dry etching, especially, a kind of device for dry etching that can on substrate surface, form uniform pattern.
Background technology
Solar cell with characteristic of semiconductor can be converted into electric energy with luminous energy.
Below structure and principle according to the solar cell of prior art are briefly introduced.Solar cell forms with the structure of the PN junction that P type semiconductor and N type semiconductor combine.When being radiated on the solar cell with PN junction structure, on this semiconductor, generate hole (+) and electronics (-) owing to the energy of sunray when sunray.Owing to produced electric field in the zone of PN junction, hole (+) to the P type semiconductor drift, electronics (-) therefore forms electric energy to the N type semiconductor drift along with the appearance of electromotive force.
Solar cell mainly is divided into wafer solar cell and thin film solar cell.
The wafer solar cell uses the wafer of making such as semi-conducting materials such as silicon.Simultaneously, thin film solar cell is to make by the form formation semiconductor with film on glass substrate.
The shortcoming of wafer solar cell is, compare with thin film solar cell, the wafer solar cell thicker and its make by utilizing expensive material.Yet on efficient, the wafer solar cell is better than thin film solar cell.
In order to maximize the absorption of sunray in the wafer solar cell, on the substrate surface of wafer solar cell, form out-of-flatness structure (or relief pattern).
If the use monocrystalline silicon substrate will carry out such as the wet etching of alkaline etching so that form out-of-flatness structure (or pattern) on the monocrystalline silicon substrate surface.Simultaneously, if use polycrystalline silicon substrate, crystal molecule is arranged to the different orientation direction, therefore is difficult to form out-of-flatness structure (or pattern) by alkaline etching on the surface of polycrystalline silicon substrate.
In addition, if form out-of-flatness structure (or pattern) by wet etching, the thickness of substrate reduces.In this respect, when carrying out wet etching, must use thick substrate.Use thick substrate to cause the production cost of solar cell to increase.
Therefore, need to propose a kind of new method that is used for being formed uniformly the out-of-flatness structure, and need not consider the orientation of crystal molecule at substrate surface.
When substrate by by being used for producing the semiconductor devices or during the wet etching etching of the technology of flat-panel monitor, using thick substrate to cause production cost to increase.In addition, be difficult on substrate, realize uniform pattern.
Finally, increase for the demand that when making solar cell, semiconductor device or flat-panel monitor, on substrate, forms the method for uniform pattern.
Summary of the invention
Therefore, the present invention proposes a kind of device for dry etching, one or more problems of having avoided restriction and shortcoming owing to prior art to produce substantially.
One aspect of the present invention provides a kind of device for dry etching, and it can form uniform pattern on substrate surface.
Its its feature of the present invention and aspect will be partly articulated in the following description, and partly, for those skilled in the art, hereinafter become obviously by consulting, and perhaps can understand from putting into practice the present invention.Purpose of the present invention and other advantage can realize by the structure that particularly points out in printed instructions and claim and accompanying drawing and obtain.
In order to reach these and other advantage and consistent with purpose of the present invention, as describing particularly and briefly at this, a kind of being used for comprises by utilizing the device for dry etching of at least one substrate of plasma etching: be positioned at least one substrate on the pallet of chamber interior; Pedestal is arranged on chamber interior simultaneously facing at least one substrate, thereby is used to provide high-frequency electrical energy to form plasma; Grounded parts, but being arranged on the following of pedestal does not contact with pedestal; And insulating element is arranged between pedestal and the grounded parts.
Grounded parts forms rectangle or flat board circular, that have centre bore.
And grounded parts comprises the mesh part.
Grounded parts comprises a plurality of openings with the grid layout arrangement.
Grounded parts forms rectangle or circular frame.
Insulating element is formed by pottery or teflon (Teflon) material.
Insulating element comprises: facing to first insulator of pedestal core; And a plurality of second insulators that combine with first insulator, thereby wherein second insulator is crooked side and the remainder of pedestal except that core facing to pedestal.
Each stairstepping surface is formed on and is used to part that first insulator and second insulator are bonded to each other, and makes on the part that the second adjacent insulator is bonded to each other, and wherein first and second insulators are by the stairstepping surface combination.
In addition, device for dry etching also comprises: be arranged on first containment member between insulating element and the pedestal; And be arranged on second containment member between insulating element and the grounded parts.
And device for dry etching comprises: the base support member is used for by the rising grounded parts pedestal being electrically connected with the rear surface of substrate; And the electrode bar that is used for providing to pedestal high-frequency electrical energy, described electrode bar passes the base support member.
The base support member comprises: first supporting member that is connected with pedestal by passing chamber, grounded parts and insulating element; By passing second supporting member that chamber is connected with grounded parts; And the plate that is connected with first and second supporting members.
And the pallet that is used at least one substrate of supporting by the rising pedestal is electrically connected with pedestal.
In addition, device for dry etching comprises the spring that is arranged between chamber and the plate.
Device for dry etching further comprises the spring that is arranged between chamber bottom surface and the grounded parts.
Grounded parts is by spring ground connection.
Should be appreciated that above-mentioned general description of the present invention and following detailed description all are to give an example with illustrative, and are intended to provide the of the present invention further explanation of being advocated.
Description of drawings
The accompanying drawing that comprises is used to provide further understanding of the present invention, and is included in a part that constitutes the application in the specification, illustrates embodiments of the invention and is used for explaining principle of the present invention with specification.In the accompanying drawings:
Fig. 1 illustrates device for dry etching according to an embodiment of the invention;
Fig. 2 illustrates and is used for illustrating the perspective view of the insulating element of device for dry etching according to an embodiment of the invention;
Fig. 3 illustrates the perspective view that is used to illustrate according to the grounded parts of first embodiment of the invention;
Fig. 4 illustrates the perspective view that is used to illustrate according to another grounded parts of first embodiment of the invention;
Fig. 5 illustrates device for dry etching according to another embodiment of the present invention;
Fig. 6 illustrates the perspective view that is used to illustrate according to the grounded parts of second embodiment of the invention;
Fig. 7 illustrates the perspective view that is used to illustrate according to the grounded parts of third embodiment of the invention;
Fig. 8 illustrates the perspective view that is used to illustrate according to the grounded parts of fourth embodiment of the invention; And
Fig. 9 A and Fig. 9 B illustrate the operation according to device for dry etching of the present invention.
Embodiment
To tell about the preferred embodiments of the present invention in detail now, its example illustrates in the accompanying drawings.Under all possible situation, all using identical Reference numeral to represent same or analogous parts in the accompanying drawing.
Hereinafter, describe with reference to the accompanying drawings according to device for dry etching of the present invention and method of operation thereof.
Fig. 1 illustrates device for dry etching according to an embodiment of the invention.
With reference to Fig. 1, device for dry etching 100 comprises according to an embodiment of the invention: chamber 110; Place at least one substrate 130 of chamber 110 inside; Be used to form plasma so that the pedestal 160 on etching substrates 130 surfaces; Be used to prevent take place below the pedestal 160 grounded partss 162 of abnormal discharge, described grounded parts 162 be arranged on pedestal 160 below; Be used to make pedestal 160 and grounded parts 162 insulating element 164 insulated from each other, described insulating element 164 is arranged between pedestal 160 and the grounded parts 162; And, being used for being provided for producing the electrode bar 180 of the high-frequency electrical energy of plasma to pedestal 160, described electrode bar 180 is electrically connected with pedestal 160 by passing grounded parts 162 and insulating element 164.
At least one substrate 130 can be positioned in the reative cell between spray head 120 and the pedestal 160 facing to the mode of pedestal 160 with it.In this case, at least one substrate 130 can be substrate or the wafer that is used to make solar cell, and substrate that is used for producing the semiconductor devices or wafer perhaps are used for making the substrate of flat-panel monitor or any one of glass substrate.
At least one substrate 130 can be positioned over the inside of chamber 110 on being placed on pallet 140 time.Pallet 140 can form rectangle or circle, and pallet 140 forms by metal material, for example aluminium.In other words, if place at least one substrate 130 on the pallet 140 to be equivalent to be used to make the substrate or the wafer of solar cell, perhaps be used to make the substrate or the wafer of flat-panel monitor, pallet 140 can form rectangle so.If the substrate or the wafer that place at least one substrate 130 on the pallet 140 to be equivalent to be used for producing the semiconductor devices, pallet 140 can form circle so.
Simultaneously, if a plurality of substrates 130 are placed on the pallet 140, so a plurality of substrates 130 can be arranged with fixed intervals in matrix layout, but are not limited thereto layout.
Device for dry etching 100 can further comprise the tray support member 150 that is used for supporting tray 140 according to an embodiment of the invention.
Two two sidewalls that are separately positioned on chamber 110, wherein tray support member 150 is arranged in parallel.Tray support member 150 supportings are passed the pallet 140 that the chamber door (not shown) is sent to reative cell by the pallet conveyer.At this moment, tray support member 150 may be a roller component, and the pallet conveyer can be to transmit automaton or conveyer.
In a plurality of second insulators 230 each all is provided with the horizontal component that removes the remainder of core facing to pedestal 160; And the vertical part that faces toward pedestal 160 sides.
Parallel portion in each second insulator 230 combines with adjacent second insulator 230 and first insulator 220.In this case, at least one stairstepping surface 240 is formed on and is used to part that first insulator 220 and second insulator 230 are bonded to each other, and makes on the part that the second adjacent insulator 230 is bonded to each other.
Insulating element 164 can be made by ceramic material or teflon material, and wherein teflon material can be increased in the density of the plasma of reative cell generation, and can prevent abnormal discharge.Preferably, insulating element 164 is formed by teflon material, but not necessarily.The dielectric constant height of the permittivity ratio pottery of teflon material.Because the high-k of teflon material is even the thickness little (for example, 40mm or littler) that insulating element 164 forms also can be realized high insulation efficient.And, because teflon material with etching gas reaction, so can minimize depression on the pedestal 160.
Form the grounded parts identical 162 by ground (not shown) electrical grounding with pedestal 160 shapes.With regard to common device for dry etching, can not make pedestal 160 direct ground connection, below pedestal 160, produce abnormal discharge thus.Simultaneously, with regard to device for dry etching according to the present invention, grounded parts 162 ground connection below being positioned over pedestal 160 time is so that can stop generation abnormal discharge below pedestal 160.
As shown in Figure 3, can be rectangular flat 310 according to the grounded parts 162 of first embodiment of the invention, but be not limited thereto structure with centre bore 312.Grounded parts 162 can be based on the circular flat board of the shape of pedestal 160.
As shown in Figure 4, can further comprise a plurality of openings 314 according to the grounded parts 162 of first embodiment of the invention with the grid layout arrangement.In this case, each opening 314 can form rectangle or circle.
The first containment member 169a is arranged between pedestal 160 and the insulating element 164, and the second containment member 169b is arranged between grounded parts 162 and the insulating element 164.In this case, the first containment member 169a and the second containment member 169b can be respectively O-shape rings, and the first containment member 169a can be positioned on first insulator 220.The first containment member 169a and the second containment member 169b make at the reative cell of chamber interior and ambient atmosphere space and separate.
Simultaneously, device for dry etching 100 can further comprise base support member 170 and high-frequency electrical energy supply arrangement 182 according to an embodiment of the invention.
Second supporting member 174 supports the rear surface of grounded parts 162 by the bottom surface of passing chamber 110.Therefore, second supporting member 174 can comprise: upper supporting part 174a, be connected on the grounded parts 162, and be plugged with the 3rd containment member 178 therebetween; Side bolsters 174b, crooked and obtain by the upper supporting part 174a ground that meets at right angles downwards, contiguous with first supporting member 172; And lower supporting part 174c is obtained by side bolsters 174b bending, and is simultaneously parallel with upper supporting part 174a, and is connected on the plate 176, is plugged with the 4th containment member 179 between described lower supporting part 174c and the plate 176.At this moment, side bolsters 174b can be provided with through hole, and first supporting member 172 passes this through hole.The 3rd containment member 178 and the 4th containment member 179 can be respectively O shape rings.
The other end of plate 176 supportings first supporting member 172 and the lower supporting part 174c of second supporting member 174.
Above-mentioned base support member 170 can supporting base 160, and can raise or reduce pedestal 160 by the lowering or hoisting gear (not shown).At this moment, when pallet 140 was loaded into tray support member 150 or therefrom unloads, lowering or hoisting gear was elevated to base support member 170 predetermined altitude that is suitable for loading and unloading.After the loading and unloading of finishing pallet 140, lowering or hoisting gear rising base support member 170 carries out etch process thus so that pedestal 160 is electrically connected with pallet 140.
High-frequency electrical energy supply arrangement 182 provides high-frequency electrical energy to electrode bar 180, and electrode bar 180 is electrically connected with pedestal 160 by passing base support member 170.When pedestal 160 was electrically connected with pallet 140 by base support member 170, high-frequency electrical energy supply arrangement 182 provided high-frequency electrical energy to electrode bar 180, so that high-frequency electrical energy is applied on the pallet 140.
By being passed in the plate 176 and first supporting member 172 on the base support member 170, electrode bar 180 is electrically connected with the core of pedestal 160.
Device for dry etching 100 can further comprise spring 190 according to an embodiment of the invention, and spring 190 is used to protect high-frequency electrical energy supply arrangement 182 and the base support member 170 that is exposed to chamber 110 outsides.
In Fig. 5, grounded parts 162 can be grounding to outside ground by spring 190.
Fig. 6 illustrates the perspective view that is used to illustrate according to the grounded parts of second embodiment of the invention.
With reference to Fig. 6, can be provided with outside framework 410, central frame 420 and mesh part 430 according to the grounded parts 162 of second embodiment of the invention.
Corresponding with the edge of pedestal 160, outside framework 410 forms rectangular shape.Fig. 6 illustrates the outside framework 410 of rectangle, but the shape of outside framework 410 is not limited to rectangle.If it is round-shaped that pedestal 160 forms, outside framework 410 will form round-shaped.
Fig. 7 illustrates the perspective view that is used to illustrate according to the grounded parts of third embodiment of the invention.
With reference to Fig. 7, thereby can form the imbricate of rectangular frame and pedestal 160 according to the grounded parts 162 of third embodiment of the invention.Then, the second containment member 169b and the 3rd containment member 178 can be separately positioned on the upper and lower surface of the grounded parts 162 that forms rectangular frame, separate so that make in the reative cell and the ambient atmosphere space of chamber 110 inside.
Fig. 8 illustrates the perspective view that is used to illustrate according to the grounded parts of fourth embodiment of the invention.
With reference to Fig. 8, thereby can form the imbricate of circular frame and pedestal 160 according to the grounded parts of fourth embodiment of the invention.Then, the second containment member 169b and the 3rd containment member 178 can be separately positioned on the upper and lower surface of the grounded parts 162 that forms circular frame, separate so that make in the reative cell and the ambient atmosphere space of chamber 110 inside.
Below with reference to the operation of Fig. 9 A and Fig. 9 B explanation according to device for dry etching of the present invention.
Shown in Fig. 9 A, outside pallet 140 is loaded onto on the tray support member 150.If the driving lowering or hoisting gear can reduce base support member 170 so and make pedestal 160 remain on predetermined altitude.
When tray support member 150 supporting trays 140, shown in Fig. 9 B, according to the operation of lowering or hoisting gear, by rising base support device 170 pedestal 160 that raises, pedestal 160 is electrically connected with the rear surface of pallet 140 thus.
When the high-frequency electrical energy that is provided to electrode bar 180 from high-frequency electrical energy supply arrangement 182 is applied on the pallet 140 by pedestal 160, and provide when handling gas to reative cell from spray head 120 simultaneously, plasma (P) is created in the reative cell of chamber 110, that is, be created between spray head 120 and the pallet 140.Then, produce ion and atomic group with collision between the electronics that is quickened by plasma (P), and the ion and the atomic group of generation enter the substrate 130 that places on the pallet 140, carry out etch process thus by handling gas.
After finishing etch process, reduce pedestal 160, and draw off pallet 140 by tray support member 150 supportings.
In device for dry etching 100 according to the present invention, grounded parts 162 is arranged on the following of pedestal 160 so that prevent to discharge below pedestal 160, therefore, by increasing the density of plasma, can realize wide process range and uniform etching.
Simultaneously, when making the wafer solar cell, thereby device for dry etching 100 according to the present invention can be used for forming out-of-flatness structure (or relief pattern) on the surface of substrate the absorption of maximization sunray.By the dry etching process that is undertaken by device for dry etching 100 according to the present invention, can on the substrate surface that is used for the wafer solar cell, form the out-of-flatness structure uniformly, and need not consider the direction of orientation of crystal molecule.Therefore, can in the technology of making the wafer solar cell, use thin substrate according to device for dry etching 100 of the present invention.
In addition, when making semiconductor device or flat-panel monitor, device for dry etching 100 according to the present invention can be used for dry etching process.
As mentioned above, device for dry etching 100 according to the present invention comprises the grounded parts 162 that is arranged on below the pedestal 160, can prevent generation abnormal discharge pedestal 160 below thus, therefore, by increasing the density of plasma, can realize wide process range and uniform etching.
And,, can on the substrate surface that is used for the wafer solar cell, form the out-of-flatness structure uniformly, and need not consider the direction of orientation of crystal molecule by the dry etching process that is undertaken by device for dry etching 100 according to the present invention.
It is obvious to those skilled in the art that under the situation of aim of the present invention and scope, can do various modifications and variations the present invention.Therefore, the invention is intended to contain improvement of the present invention and the modification that drops in accompanying Claim and the equivalent scope thereof.
Claims (22)
1. device for dry etching comprises:
Chamber is used for the etch process at the substrate of reative cell;
Pedestal be arranged in the described chamber being positioned at described reative cell below, and described pedestal is electrically connected with the high-frequency electrical energy supply arrangement; And
Grounded parts, described grounded parts ground connection, and described grounded parts is set at the below of described pedestal but is not electrically connected with described pedestal.
2. device for dry etching as claimed in claim 1, further comprise the spray head that is used for to the described reative cell inject process gas of described chamber, wherein, under the situation between described spray head and the described pedestal, described spray head is disposed in the described chamber simultaneously facing to described pedestal at described reative cell.
3. device for dry etching as claimed in claim 2, wherein, described processing gas forms by at least a gas that adds in chlorine, sulfur fluoride gas, nitrogen fluoride gas and the bromize hydrogen gas; Perhaps form by at least a gas that in above interpolation gas, adds in argon gas, oxygen, nitrogen and the helium.
4. as claim 2 or 3 described device for dry etching, wherein, described spray head comprises:
First pervasion component is used to make the described processing gas that provides from the outside to spread for the first time; And
Second pervasion component is used for the processing gas through diffusion is for the first time carried out diffusion for the second time and will be through the processing gas blowing of spreading for the second time to reative cell.
5. device for dry etching as claimed in claim 4, wherein, at least one rotation in described first pervasion component and described second pervasion component.
6. device for dry etching as claimed in claim 1, wherein, described grounded parts forms rectangle or the circular flat board with centre bore.
7. as claim 1 or 6 described device for dry etching, wherein, described grounded parts comprises the mesh part or with a plurality of openings of grid layout arrangement.
8. device for dry etching as claimed in claim 1 further comprises insulating element, and described insulating element is arranged between described pedestal and the described grounded parts, is used to make the rear surface and the side insulation of described pedestal.
9. device for dry etching as claimed in claim 8, wherein, described insulating element comprises:
First insulator is facing to the rear portion core of described pedestal; And
A plurality of second insulators combine with described first insulator and cross one another, and described a plurality of second insulators are facing to the side and the rear surface of described pedestal, except the described rear portion core of described pedestal.
10. device for dry etching as claimed in claim 8 further comprises:
First containment member is arranged between described insulating element and the described pedestal; And
Second containment member is arranged between described insulating element and the described grounded parts.
11. device for dry etching as claimed in claim 10, wherein, described pedestal, described grounded parts and described insulating element form as one.
12. device for dry etching as claimed in claim 8 further comprises:
The base support member is used for by raise described pedestal and described grounded parts described pedestal being electrically connected with described substrate;
Electrode bar is electrically connected with described pedestal by passing described base support member; And
The high-frequency electrical energy supply arrangement is used for providing high-frequency electrical energy by described electrode bar to described pedestal.
13. device for dry etching as claimed in claim 12, wherein, described base support member comprises:
First supporting member is used for by passing the rear portion that described chamber, described grounded parts and described insulating element support described pedestal;
Second supporting member is used for by passing the rear portion that described chamber supports described grounded parts; And
Plate is used to support described first supporting member and described second supporting member.
14. device for dry etching as claimed in claim 13 further comprises:
The 3rd containment member is arranged between the side and described grounded parts of described second supporting member; And
The 4th containment member is arranged between the opposite side and described plate of described second supporting member.
15. device for dry etching as claimed in claim 1 further comprises:
Pallet is used to support described substrate and by the described pedestal that raises described pedestal is electrically connected with described substrate; And
Tray support member is set to two parallel sidewalls with described chamber, and described tray support member is used to support described pallet.
16. device for dry etching as claimed in claim 15, wherein, described pallet is made by metal material, and a plurality of substrate is arranged on the described pallet with fixed intervals.
17. one kind by utilizing the dry-etching method of the plasma etching substrate form in the reative cell of chamber, comprising:
Pedestal to the described reative cell below that is arranged on described chamber provides high-frequency electrical energy, and will be arranged on the grounded parts ground connection of described pedestal below, thereby described grounded parts is not electrically connected with described pedestal; And
Come the described substrate of etching by in the described reative cell of described chamber, forming described plasma according to high-frequency electrical energy.
18. one kind by utilizing the dry-etching method of the plasma etching substrate form in the reative cell of chamber, comprising:
Pallet is sent to described reative cell, and at least one substrate is loaded on the described pallet;
Be electrically connected with described pallet with the pedestal that is positioned at described pallet below being arranged in the described chamber;
Provide high-frequency electrical energy to described pedestal, and will be arranged on the grounded parts ground connection of described pedestal below, thereby described grounded parts is not electrically connected with described pedestal; And
Come the described substrate of etching by in the described reative cell of described chamber, forming described plasma according to high-frequency electrical energy.
19. as claim 17 or 18 described dry-etching methods, further comprise, at described reative cell under the situation between described spray head and the described pedestal, by utilizing spray head will handle gas blowing to described substrate, described spray head is disposed in the described chamber to face toward described pedestal.
20. dry-etching method as claimed in claim 19, wherein, described processing gas forms by at least a gas that adds in chlorine, sulfur fluoride gas, nitrogen fluoride gas and the bromize hydrogen gas; Perhaps form by at least a gas that in above interpolation gas, adds in argon gas, oxygen, nitrogen and the helium.
21. dry-etching method as claimed in claim 19 wherein, comprises described processing gas blowing to the process on the described substrate:
The described processing gas that offers described spray head from the outside is carried out the diffusion first time; And
Processing gas through diffusion is for the first time carried out diffusion second time, and will be through the processing gas blowing of spreading the second time to described substrate.
22. dry-etching method as claimed in claim 18 wherein, makes the described pallet of described base supports and then the rear portion of described pedestal and described pallet is electrically connected by the described pedestal that raises, and carries out the process that described pedestal and described pallet are electrically connected.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2008-0064236 | 2008-07-03 | ||
| KR20080064236 | 2008-07-03 | ||
| KR1020090049502A KR20100004857A (en) | 2008-07-03 | 2009-06-04 | Dry etching apparatus |
| KR10-2009-0049502 | 2009-06-04 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101572581A Division CN101620989B (en) | 2008-07-03 | 2009-07-03 | Dry etching apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102290328A true CN102290328A (en) | 2011-12-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101572581A Expired - Fee Related CN101620989B (en) | 2008-07-03 | 2009-07-03 | Dry etching apparatus |
| CN2011101835334A Pending CN102290328A (en) | 2008-07-03 | 2009-07-03 | Dry etching apparatus |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101572581A Expired - Fee Related CN101620989B (en) | 2008-07-03 | 2009-07-03 | Dry etching apparatus |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20100004857A (en) |
| CN (2) | CN101620989B (en) |
| TW (1) | TWI405261B (en) |
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| US10134615B2 (en) * | 2015-02-13 | 2018-11-20 | Applied Materials, Inc. | Substrate support with improved RF return |
| KR101800321B1 (en) | 2016-04-18 | 2017-11-22 | 최상준 | Apparatus for Dry Etching |
| JP6994981B2 (en) * | 2018-02-26 | 2022-01-14 | 東京エレクトロン株式会社 | Manufacturing method of plasma processing equipment and mounting table |
| US11434569B2 (en) * | 2018-05-25 | 2022-09-06 | Applied Materials, Inc. | Ground path systems for providing a shorter and symmetrical ground path |
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| CN2870385Y (en) * | 2005-01-25 | 2007-02-14 | 中国科学院光电研究院 | Large-area flat-board normal-pressure radio-frequency cold plasma discharge apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0834205B2 (en) * | 1986-11-21 | 1996-03-29 | 株式会社東芝 | Dry etching equipment |
| JP2002261084A (en) * | 2001-03-05 | 2002-09-13 | Matsushita Electric Ind Co Ltd | Dry etching method and apparatus thereof |
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2009
- 2009-06-04 KR KR1020090049502A patent/KR20100004857A/en not_active Application Discontinuation
- 2009-06-26 TW TW098121737A patent/TWI405261B/en active
- 2009-07-03 CN CN2009101572581A patent/CN101620989B/en not_active Expired - Fee Related
- 2009-07-03 CN CN2011101835334A patent/CN102290328A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH10321604A (en) * | 1997-05-22 | 1998-12-04 | Nec Kyushu Ltd | Plasma treatment device |
| US20020179246A1 (en) * | 2001-05-31 | 2002-12-05 | Alcatel | Removable shield arrangement for ICP-RIE reactors |
| CN1604270A (en) * | 2003-08-22 | 2005-04-06 | 东京毅力科创株式会社 | Particle removal apparatus and method and plasma processing apparatus |
| CN2870385Y (en) * | 2005-01-25 | 2007-02-14 | 中国科学院光电研究院 | Large-area flat-board normal-pressure radio-frequency cold plasma discharge apparatus |
| CN1909193A (en) * | 2005-08-04 | 2007-02-07 | 周星工程股份有限公司 | Plasma etching apparatus |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102534622A (en) * | 2012-03-20 | 2012-07-04 | 常州比太科技有限公司 | Method for forming solar dry textured black silicon by plasma excitation |
| CN112703591A (en) * | 2018-09-18 | 2021-04-23 | Tes股份有限公司 | Substrate support unit |
| CN112703591B (en) * | 2018-09-18 | 2024-04-12 | Tes股份有限公司 | Substrate supporting unit |
| CN111599734A (en) * | 2019-02-21 | 2020-08-28 | 北京北方华创微电子装备有限公司 | Bearing device and semiconductor processing equipment |
| CN111599734B (en) * | 2019-02-21 | 2024-04-16 | 北京北方华创微电子装备有限公司 | Bearing device and semiconductor processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201003778A (en) | 2010-01-16 |
| KR20100004857A (en) | 2010-01-13 |
| TWI405261B (en) | 2013-08-11 |
| CN101620989A (en) | 2010-01-06 |
| CN101620989B (en) | 2011-09-14 |
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