CN102290314B - Device for producing neutral particle beam and method thereof - Google Patents
Device for producing neutral particle beam and method thereof Download PDFInfo
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- CN102290314B CN102290314B CN 201110288064 CN201110288064A CN102290314B CN 102290314 B CN102290314 B CN 102290314B CN 201110288064 CN201110288064 CN 201110288064 CN 201110288064 A CN201110288064 A CN 201110288064A CN 102290314 B CN102290314 B CN 102290314B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
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- Plasma Technology (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a device for producing a neutral particle beam, which comprises a reaction chamber, a slide glass table, a plasma source and an upper mesh plate. The slide glass table, the plasma source and the upper mesh plate are arranged on a chip and in the reaction chamber, the upper mesh plate is arranged on the plasma source, and an intermediate mesh plate, an insulating plate and a lower mesh plate are sequentially arranged between the plasma source and the slide glass table; and the upper mesh plate and the lower mesh plate are respectively connected with direct-current bias voltage, and the intermediate mesh plate is grounded. The invention also discloses a method for producing the neutral particle beam. By adopting the device for producing the neutral particle beam and the method thereof, positive ions and negative ions can be neutralized, the efficiency of ion neutralization can be improved, and different ions in mixed gases can achieve corresponding etching effects. The device and the method can adapt to different gas combinations and meet requirements of different etching processes.
Description
Technical field
The present invention relates to the Micrometer-Nanometer Processing Technology field of the films such as integrated circuit, microelectromechanical systems (MEMS), solar energy and body material surface technique, particularly a kind of device and method that produces eutral particle beam.
Background technology
The product integrated level is high, become more meticulous, high efficiency, low cost, is the direct driving force of the microfabrication development of manufacturing such as integrated circuit always.Since 1970, at first the device manufacture brings into use plasma process, and this makes the plasma process technology become the key technology of the industrial circle microfabrication such as large scale integrated circuit (LSI).At present, the plasma process technology such as etching, Implantation, cleaning, deposition, be widely used in the manufacturing process of very lagre scale integrated circuit (VLSIC).The plasma process technology, be mainly used in SiO
2, Si
xn
ydeng the microfabrication of the semiconductive thin films such as dielectric film, Si, GaAs and the metallic films such as Al, Cu, this technology is uniquely can effectively accurately control various scantlings to the submicron order size, and has the technology of high repeatability.
Yet, along with dwindling of device feature size, in the microfabrication below the submicron order size, the plasma process technology, need solve the problem of rapidoprint and device damage.Particularly there is a series of problem in etching technics.Plasma etch process, when need solve high uniformity, high selectivity and depth-to-width ratio, meet the requirement of high etching rate, low damage, in this process, easily produce the subject matters such as irradiation damage that electrostatic damage, Ions Bombardment damage, ultraviolet light and X-ray cause, electronic shadow effect.
The problems such as plasma damage, can affect etching precision and device performance, causes discomposition, non-localized lattice, dangling bonds, and the phenomenon such as threshold voltage shift, transconductance degradation, junction leakage increase.These problems are along with device feature size reduces to become further outstanding, and particularly the accurate etching below 10nm is very difficult.Therefore, becoming more meticulous of integrated circuit had higher requirement to technique and equipment, and traditional plasma processing tool is difficult to meet the requirement that further becomes more meticulous and process.
The neutral particle technology is a kind of method that can solve the problem such as material and device damage in microfabrication.This technology adopts the method that generates eutral particle beam, has finely solved electrostatic damage in plasma etching, has weakened the problems such as irradiation damage, has improved craft precision and device performance, meets the requirement that the integrated circuit manufacture constantly becomes more meticulous.
Fig. 1,2 illustrate respectively a neutral particle process system.This system is under the certain vacuum condition, process gas is from air inlet 111 enters reative cell 102 tops, load radio-frequency power on planar spiral-type radio-frequency coil 122, make process gas under the exciting of radio-frequency power supply 121, on reative cell 102 tops, produce plasma.Produce ion, free radical, molecule, atom etc. are arranged in plasma atmosphere.Ion accelerates by direct current (DC) bias 124, by obtaining energy after the aperture on neutralization web plate 123 and realizing the ion neutralization.While on web plate 123, being added with voltage, in reaction chamber, ion can accelerate, to the web plate motion, to obtain at the volley energy under the effect of electric field., can bump with hole wall in the aperture of web plate the time when ion motion, carry out charge neutrality, form eutral particle beam 132.Eutral particle beam is processed the chip 104 be placed on slide holder 103, realizes the techniques such as etching.During the eutral particle beam etching, the electric field strength that ion need be higher is accelerated rear neutralization, thereby obtains the needed high-energy of etching.In this structure, in the time of the downward web plate motion of cation, can not make the downward web plate motion of anion; When making the downward web plate motion of anion, can not make the downward web plate motion of cation.That is, can not be simultaneously to cation and anion neutralization.Yet must adopt mist by a certain percentage in some techniques, several different particles act on simultaneously and could meet technological requirement.But different types of gas discharge produce from the existence form difference.For example, when adopting the mixed gas discharge of CF4, Ar/O2, CF4, Ar ion mainly exist with the form of cation, and the O oxonium ion mainly exists with the form of anion.This meeting causes CF4, Ar ion and O oxonium ion can, simultaneously by neutralization, can not meet specific etching technics.
Summary of the invention
One of purpose of the present invention is to provide a kind of device and method that makes the different particles such as positive and negative ion can realize the generation eutral particle beam of neutralization.
According to an aspect of the present invention, a kind of device that produces eutral particle beam is provided, the slide holder, plasma source, the upper web plate that comprise reaction cavity, chip placement, described upper web plate, plasma source and described slide holder are arranged on described reaction cavity inside, described upper web plate is arranged on described plasma source top, is disposed with middle web plate, insulation board and lower web plate between described plasma source and described slide holder; Described upper web plate is connected respectively a direct current bias voltage with described lower web plate, described middle web plate ground connection.
Further, the thickness of described middle web plate, insulation board and lower web plate is 0.1-500mm.
Further, the thickness of described middle web plate, insulation board and lower web plate is 10 mm.
Further, the diameter of the mesh of described middle web plate, insulation board and lower web plate is 0.1-50mm.
Further, the diameter of the mesh of described middle web plate, insulation board and lower web plate is 0.1-3mm
Further, the Mesh distance of described middle web plate, insulation board and lower web plate is 0-10mm.
Further, the Mesh distance of described middle web plate, insulation board and lower web plate is 0.1-5mm
Further, the shape of the mesh of described middle web plate, insulation board and lower web plate comprises cylindrical, hexagon, rhombus, rectangle.
According to another aspect of the present invention, provide a kind of method that produces eutral particle beam, comprising:
In period, load radio frequency at T1, at upper web plate, add negative voltage, middle web plate bias voltage is 0, and lower web plate bias voltage is 0, makes the anion neutralization; At T2, in the period, radio-frequency power is 0, at lower web plate, adds negative voltage, and middle web plate bias voltage is 0, and upper web plate bias voltage is 0, makes the cation neutralization; Described T1, T2 are 0～0.1s.
According to another aspect of the present invention, provide a kind of method that produces eutral particle beam to comprise:
In period, load radio frequency at T1, at upper web plate, add positive voltage, middle web plate bias voltage is 0, and lower web plate bias voltage is 0, makes the anion neutralization;
At T2, in the period, radio-frequency power is 0, at lower web plate, adds negative voltage, and middle web plate bias voltage is 0, and upper web plate bias voltage is 0, makes the cation neutralization; Described T1, T2 are 0～0.1s.
Adopt upper, middle and lower multi-layered net plate structure according to the device and method of generation eutral particle beam provided by the invention, in process gas enters reaction chamber, produce plasma under the pulse radiation frequency incentive condition, in one-period, load at times corresponding direct current (DC) bias on mesh-plate structure, can control direction of an electric field, the accelerated particle motion, thereby just make, the different particles such as anion can be realized neutralization, and generation is to the corrasion of chip, improved the neutralization efficiency of ion, guaranteed that the ion not of the same race in the mist all can produce corresponding corrasion, adapted to the gas with various combination, to meet the requirement of different etching technique.
The accompanying drawing explanation
Fig. 1 is the structural representation of existing neutral particle process system;
Fig. 2 is the structural representation of existing another neutral particle process system;
Fig. 3 is the structural representation of the device of the generation eutral particle beam that provides of the embodiment of the present invention;
Fig. 4 is the embodiment of the present invention back bias voltage DC1, the DC2 that provide and the schematic diagram of the added radio frequency sequential of planar spiral-type radio-frequency coil 122;
The object of the invention, function and advantage, in connection with embodiment, are described further with reference to accompanying drawing.
Embodiment
The device of the generation eutral particle beam that as shown in Figure 3, the embodiment of the present invention provides comprises reaction cavity 102, air inlet 111, radio-frequency power supply 121, planar spiral-type radio-frequency coil 122, Faraday shield grid 126, plasma source 131, exhaust outlet 112, slide holder 103, chip 104, upper web plate 127, middle web plate 223a, insulation board 223b and lower web plate 223c.Upper web plate 127 is arranged on plasma source 131 tops.Be disposed with middle web plate 223a, insulation board 223b and lower web plate 223c between plasma source 131 and slide holder 103.Upper web plate 127 is connected to direct current (DC) bias DC1.Middle web plate 223a ground connection.Lower web plate 223c is added with direct current (DC) bias DC2.That middle web plate 223a, insulation board 223b and lower web plate 223c are penetrated with is cylindrical, the aperture of hexagon, rhombus or other shapes.The thickness of middle web plate 223a, insulation board 223b and lower web plate 223c is 0.1-500mm.Preferably, the thickness of middle web plate 223a, insulation board 223b and lower web plate 223c is 10mm.The diameter of the mesh of middle web plate 223a, insulation board 223b and lower web plate 223c is 0.1～50mm.Preferably, the diameter of the mesh of middle web plate 223a, insulation board 223b and lower web plate 223c is 0.1-3mm.The Mesh distance of middle web plate 223a, insulation board 223b and lower web plate 223c is 0-10mm.Preferably, the Mesh distance of middle web plate 223a, insulation board 223b and lower web plate 223c is 0.1-5mm.The material of upper web plate 127, middle web plate 223a and lower web plate 223c can adopt the material as low sputtering rastes such as graphite, carbon fiber or carborundum.Insulation board 223b material is selected polytetrafluoro.
The method that below device that produces eutral particle beam is produced to eutral particle beam describes.
Process gas, from air inlet 111 enters reaction cavity 102, produces plasma 131 at reaction cavity 102 under the exciting of the planar spiral-type radio-frequency coil 122 that is loaded with pulse radiation frequency power.
At T1, in the period, planar spiral-type radio-frequency coil 122 loads the power of radio-frequency power supply 121, and upper web plate 127 is added with back bias voltage DC1(from direct current (DC) bias 124a), middle web plate bias voltage is 0, and the bias voltage of lower web plate is 0, and direction of an electric field is upward.There is ambipolar electric field in plasma, and anion is bound in plasma inside; And cation descends rapidly because of composite action density with electronics to the border motion of plasma, the intensity of ambipolar electric field and electron energy also descend rapidly.Anion density descends slower, even in the leading portion of T1 period, can increase to some extent.Anion, under the acceleration of electric field, moves in the web plate aperture, with hole wall, bumps and neutralization, generates the rear arrival chip 104 of eutral particle beam 132, realizes etching technics.
At T2, in the period, the power of the radio-frequency power supply 121 that planar spiral-type radio-frequency coil 122 loads is 0, and lower web plate 223c adds back bias voltage DC2(from direct current (DC) bias 124b), middle web plate 223a bias voltage is 0, and the bias voltage of upper web plate 127 is 0, and direction of an electric field is down.Now, cation, under the acceleration of electric field, moves in the web plate aperture, with hole wall, bumps and neutralization, after the generation neutral particle, arrives chip, realizes etching technics.
In like manner, also can add positive voltage at lower web plate 223c in the period by T1, middle web plate 223a bias voltage is 0, and upper web plate 127 bias voltages are 0, make the anion neutralization; On T2 period inherence, web plate 127 adds positive voltage, and middle web plate 223a bias voltage is 0, and lower web plate 223c bias voltage is 0, makes the cation neutralization.
The added radio frequency sequential of DC1 and DC2 and planar spiral-type radio-frequency coil 122 as shown in Figure 4.
Therefore, in one-period, positive and negative ion can neutralization, and the ion that the different process gas that has guaranteed to mix by a certain percentage generates, all can realize the neutralization corrasion.But adjust suitable T1, T2, DC1, the parameter values such as DC2.T1, T2 are generally 0～500 microsecond.Preferably, T1, T2 are chosen as 50 microseconds.DC1, the value of DC2 is generally 0～-600V.Can be by regulating T1, T2, DC1, DC2 and adapt to different combination of gases, to meet technological requirement.
The device and method of the generation eutral particle beam that the embodiment of the present invention provides adopts upper, middle and lower multi-layered net plate structure, in process gas enters reaction chamber, produce plasma under the pulse radiation frequency incentive condition, in one-period, load at times corresponding direct current (DC) bias on mesh-plate structure, can control direction of an electric field, the accelerated particle motion, thereby just make, the different particles such as anion can be realized neutralization, and generation is to the corrasion of chip, improved the neutralization efficiency of ion, guaranteed that the ion not of the same race in the mist all can produce corresponding corrasion, adapted to the gas with various combination, to meet the requirement of different etching technique.
Above-described embodiment is preferably execution mode of the present invention; but embodiments of the present invention are not restricted to the described embodiments; other any do not deviate from change, the modification done under Spirit Essence of the present invention and principle, substitutes, combination, simplify; all should be equivalent substitute mode, within being included in protection scope of the present invention.
Claims (6)
1. a device that produces eutral particle beam, comprise slide holder, plasma source, the upper web plate of reaction cavity, chip placement, and described upper web plate, plasma source and described slide holder are arranged on described reaction cavity inside, it is characterized in that:
Described upper web plate is arranged on described plasma source top, is disposed with middle web plate, insulation board and lower web plate between described plasma source and described slide holder; Described upper web plate is connected respectively a direct current bias voltage with described lower web plate, described middle web plate ground connection.
2. device according to claim 1 is characterized in that:
The diameter of the mesh of described middle web plate, insulation board and lower web plate is 0.1-50mm; The web plate diameter of described middle web plate, insulation board and lower web plate is 20-5000mm.
3. device according to claim 1 is characterized in that:
The Mesh distance of described middle web plate, insulation board and lower web plate is 0.1-5mm.
4. device according to claim 1 is characterized in that:
That the shape of the mesh of described middle web plate, insulation board and lower web plate comprises is cylindrical, hexagon, rhombus, rectangle.
5. a method that produces eutral particle beam based on the described device of claim 1～4 any one, be characterised in that, comprising:
In period, load radio frequency at T1, at upper web plate, add negative voltage, middle web plate bias voltage is 0, and lower web plate bias voltage is 0, makes the anion neutralization;
At T2, in the period, radio-frequency power is 0, at lower web plate, adds negative voltage, and middle web plate bias voltage is 0, and upper web plate bias voltage is 0, makes the cation neutralization; Described T1, T2 are 0～0.1s.
6. a method that produces eutral particle beam based on the described device of claim 1～4 any one, be characterised in that, comprising:
In period, load radio frequency at T1, at upper web plate, add positive voltage, middle web plate bias voltage is 0, and lower web plate bias voltage is 0, makes the anion neutralization;
At T2, in the period, radio-frequency power is 0, at lower web plate, adds negative voltage, and middle web plate bias voltage is 0, and upper web plate bias voltage is 0, makes the cation neutralization; Described T1, T2 are 0～0.1s.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110288064 CN102290314B (en) | 2011-09-26 | 2011-09-26 | Device for producing neutral particle beam and method thereof |
| PCT/CN2012/082097 WO2013044814A1 (en) | 2011-09-26 | 2012-09-26 | Neutral particle beam producing device and method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110288064 CN102290314B (en) | 2011-09-26 | 2011-09-26 | Device for producing neutral particle beam and method thereof |
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| CN102290314A CN102290314A (en) | 2011-12-21 |
| CN102290314B true CN102290314B (en) | 2013-12-25 |
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| CN102290314B (en) * | 2011-09-26 | 2013-12-25 | 中国科学院微电子研究所 | Device for producing neutral particle beam and method thereof |
| CN106653549B (en) * | 2015-11-03 | 2020-02-11 | 中微半导体设备(上海)股份有限公司 | Semiconductor processing equipment |
| CN110207947A (en) * | 2019-05-08 | 2019-09-06 | 南京航空航天大学 | Drop accelerator and method |
| CN114078685B (en) * | 2021-11-17 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
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| US6772827B2 (en) * | 2000-01-20 | 2004-08-10 | Applied Materials, Inc. | Suspended gas distribution manifold for plasma chamber |
| KR100476903B1 (en) * | 2002-10-15 | 2005-03-17 | 주식회사 셈테크놀러지 | Neutral particle beam processing apparatus with enhanced conversion performance from plasma ions to neutral particles |
| JP2008128887A (en) * | 2006-11-22 | 2008-06-05 | Ae Kiki Engineering Co Ltd | Plasma source, high frequency ion source using it, negative ion source, ion beam processor, neutral particle beam incident device for nuclear fusion |
| CN101930890A (en) * | 2009-06-26 | 2010-12-29 | 中微半导体设备(上海)有限公司 | Electrode component for plasma treatment, internal components for plasma treatment and manufacturing and separating method thereof |
| CN102290314B (en) * | 2011-09-26 | 2013-12-25 | 中国科学院微电子研究所 | Device for producing neutral particle beam and method thereof |
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| WO2013044814A1 (en) | 2013-04-04 |
| CN102290314A (en) | 2011-12-21 |
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Effective date of registration: 20180815 Address after: 101111 Beijing City Economic and Technological Development Zone Tianhua garden two Li two district 19 buildings F1B9 Patentee after: ZHONGKE AIER (BEIJING) TECHNOLOGY Co.,Ltd. Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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Denomination of invention: Device and method for generating neutral particle beam Effective date of registration: 20220623 Granted publication date: 20131225 Pledgee: Beijing Yizhuang International Financing Guarantee Co.,Ltd. Pledgor: ZHONGKE AIER (BEIJING) TECHNOLOGY Co.,Ltd. Registration number: Y2022980008766 |