CN102290314A - Device for producing neutral particle beam and method thereof - Google Patents
Device for producing neutral particle beam and method thereof Download PDFInfo
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- CN102290314A CN102290314A CN2011102880642A CN201110288064A CN102290314A CN 102290314 A CN102290314 A CN 102290314A CN 2011102880642 A CN2011102880642 A CN 2011102880642A CN 201110288064 A CN201110288064 A CN 201110288064A CN 102290314 A CN102290314 A CN 102290314A
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- web plate
- bias voltage
- insulation board
- particle beam
- plasma source
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32422—Arrangement for selecting ions or species in the plasma
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- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a device for producing a neutral particle beam, which comprises a reaction chamber, a slide glass table, a plasma source and an upper mesh plate. The slide glass table, the plasma source and the upper mesh plate are arranged on a chip and in the reaction chamber, the upper mesh plate is arranged on the plasma source, and an intermediate mesh plate, an insulating plate and a lower mesh plate are sequentially arranged between the plasma source and the slide glass table; and the upper mesh plate and the lower mesh plate are respectively connected with direct-current bias voltage, and the intermediate mesh plate is grounded. The invention also discloses a method for producing the neutral particle beam. By adopting the device for producing the neutral particle beam and the method thereof, positive ions and negative ions can be neutralized, the efficiency of ion neutralization can be improved, and different ions in mixed gases can achieve corresponding etching effects. The device and the method can adapt to different gas combinations and meet requirements of different etching processes.
Description
Technical field
The present invention relates to the Micrometer-Nanometer Processing Technology field of films such as integrated circuit, microelectromechanical systems (MEMS), solar energy and body material surface technology, particularly a kind of device and method that produces eutral particle beam.
Background technology
Product integrated level height, become more meticulous, high efficiency, low cost, be the direct driving force of microfabrication development of manufacturing such as integrated circuit always.Since 1970, plasma process is at first brought into use in the device manufacturing, and this makes the plasma process technology become the key technology of large scale integrated circuit industrial circle microfabrication such as (LSI).At present, plasma process technology such as etching, ion injection, cleaning, deposition are widely used in the manufacturing process of very lagre scale integrated circuit (VLSIC).The plasma process technology is mainly used in SiO
2, Si
xN
yDeng the microfabrication of semiconductive thin films such as dielectric film, Si, GaAs and metallic films such as Al, Cu, this technology is uniquely can effectively accurately control various scantlings to the submicron order size, and has the technology of high repeatability.
Yet along with dwindling of device feature size, in the microfabrication below the submicron order size, the plasma process technology need solve the problem of rapidoprint and device damage.Particularly there is a series of problem in etching technics.Plasma etch process, when need solve high uniformity, high selectivity and depth-to-width ratio, satisfy the requirement of high etching rate, low damage, in this process, be easy to generate subject matters such as irradiation damage that electrostatic damage, ion bombardment damage, ultraviolet light and X-ray cause, electronic shadow effect.
Problems such as plasma damage can influence etching precision and device performance, cause discomposition, non-localized lattice, dangling bonds, and phenomenon such as threshold voltage shift, mutual conductance degeneration, junction leakage increase.These problems are along with device feature size reduces to become outstanding further, and particularly the accurate etching below 10nm is very difficult.Therefore, becoming more meticulous of integrated circuit had higher requirement to technology and equipment, and traditional plasma processing tool is difficult to satisfy the requirement that further becomes more meticulous and process.
The neutral particle technology is a kind of method that can solve problem such as material and device damage in the microfabrication.This technology adopts the method that generates eutral particle beam, has finely solved electrostatic damage in the plasma etching, has weakened problems such as irradiation damage, has improved craft precision and device performance, satisfies the requirement that the integrated circuit manufacturing constantly becomes more meticulous.
Fig. 1,2 illustrate a neutral particle process system respectively.This system is under the certain vacuum condition, after process gas enters reative cell 102 tops from air inlet 111, on snail type radio-frequency coil 122, load radio-frequency power, make process gas under the exciting of radio-frequency power supply 121, produce plasma on reative cell 102 tops.In plasma atmosphere, produce ion, free radical, molecule, atom etc. are arranged.Ion quickens by Dc bias 124, by obtaining energy behind the aperture on the neutralization web plate 123 and realizing the ion neutralization.When being added with voltage on the web plate 123, ion can quicken to obtain energy at the volley to the web plate motion under effect of electric field in the reaction chamber.When ion motion is in the aperture of web plate, can bump with hole wall, carry out charge neutrality, form eutral particle beam 132.Eutral particle beam is handled the chip 104 that is placed on the slide holder 103, realizes technologies such as etching.During the eutral particle beam etching, the electric field strength that ion need be higher is quickened the back neutralization, thereby obtains the needed high-energy of etching.In this structure, when the downward web plate of cation moves, can not make the downward web plate motion of anion; When the downward web plate of anion is moved, can not make the downward web plate motion of cation.That is, can not be simultaneously to cation and anion neutralization.Yet must adopt mist by a certain percentage in some technologies, several different particles act on simultaneously and could satisfy technological requirement.But different types of gas discharge produce from the existence form difference.For example, when adopting the mixed gas discharge of CF4, Ar/O2, CF4, Ar ion mainly exist with the form of cation, and the O oxonium ion then mainly exists with the form of anion.This meeting causes CF4, Ar ion and O oxonium ion can not satisfy specific etching technics simultaneously by neutralization.
Summary of the invention
One of purpose of the present invention provides a kind of device and method that makes different particles such as positive and negative ion can both realize the generation eutral particle beam of neutralization.
According to an aspect of the present invention, a kind of device that produces eutral particle beam is provided, comprise reaction cavity, the slide holder of placing chip, plasma source, go up web plate, described web plate, plasma source and the described slide holder gone up is arranged on described reaction cavity inside, described last web plate is arranged on described plasma source top, is disposed with middle web plate, insulation board and following web plate between described plasma source and the described slide holder; The described web plate of going up is connected a direct current bias voltage respectively with described web plate down, described middle web plate ground connection.
Further, the thickness of web plate was 0.1-500mm under described middle web plate, insulation board reached.
Further, the thickness of web plate was 10 mm under described middle web plate, insulation board reached.
Further, the diameter of the mesh of web plate was 0.1-50mm under described middle web plate, insulation board reached.
Further, the diameter of the mesh of web plate was 0.1-3mm under described middle web plate, insulation board reached
Further, the mesh spacing of web plate was 0-10mm under described middle web plate, insulation board reached.
Further, the mesh spacing of web plate was 0.1-5mm under described middle web plate, insulation board reached
Further, web plate in described, insulation board and down the shape of the mesh of web plate comprise cylindrical, hexagon, rhombus, rectangle.
According to another aspect of the present invention, provide a kind of method that produces eutral particle beam, comprising:
In period, load radio frequency at T1, add negative voltage at last web plate, middle web plate bias voltage is 0, and following web plate bias voltage is 0, makes the anion neutralization; In period, radio-frequency power is 0 at T2, adds negative voltage at following web plate, and middle web plate bias voltage is 0, and last web plate bias voltage is 0, makes the cation neutralization; Described T1, T2 are 0～0.1s.
According to another aspect of the present invention, provide a kind of method that produces eutral particle beam to comprise:
In period, load radio frequency at T1, add positive voltage at last web plate, middle web plate bias voltage is 0, and following web plate bias voltage is 0, makes the anion neutralization;
In period, radio-frequency power is 0 at T2, adds negative voltage at following web plate, and middle web plate bias voltage is 0, and last web plate bias voltage is 0, makes the cation neutralization; Described T1, T2 are 0～0.1s.
Device and method according to generation eutral particle beam provided by the invention adopts upper, middle and lower multi-layered net plate structure, in process gas enters reaction chamber, the pulse radiation frequency incentive condition produces plasma down, in one-period, on the web plate structure, load corresponding Dc bias at times, can control direction of an electric field, the accelerated particle motion, thereby just make, different particles such as anion can both be realized neutralization, and produce corrasion to chip, and improved the neutralization efficient of ion, guaranteed that the ion not of the same race in the mist all can produce corresponding corrasion, adapted to the gas with various combination, to satisfy the requirement of different etching technology.
Description of drawings
Fig. 1 is the structural representation of existing neutral particle process system;
Fig. 2 is the structural representation of existing another neutral particle process system;
Fig. 3 is the structural representation of the device of the generation eutral particle beam that provides of the embodiment of the invention;
Fig. 4 is the embodiment of the invention back bias voltage DC1, the DC2 that provide and the schematic diagram of snail type radio-frequency coil 122 added radio frequency sequential;
The object of the invention, function and advantage will be in conjunction with the embodiments, are described further with reference to accompanying drawing.
Embodiment
As shown in Figure 3, the device of the generation eutral particle beam that provides of the embodiment of the invention comprise reaction cavity 102, air inlet 111, radio-frequency power supply 121, snail type radio-frequency coil 122, Faraday shield grid 126, plasma source 131, exhaust outlet 112, slide holder 103, chip 104, go up web plate 127, middle web plate 223a, insulation board 223b and web plate 223c down.Last web plate 127 is arranged on plasma source 131 tops.Web plate 223a, insulation board 223b reach web plate 223c down in being disposed with between plasma source 131 and the slide holder 103.Last web plate 127 is connected to Dc bias DC1.Middle web plate 223a ground connection.Following web plate 223c is added with Dc bias DC2.In web plate 223a, insulation board 223b and down web plate 223c be penetrated with the aperture of cylindrical, hexagon, rhombus or other shapes.Middle web plate 223a, insulation board 223b reach down, and the thickness of web plate 223c is 0.1-500mm.Preferably, the thickness of web plate 223c was 10mm under middle web plate 223a, insulation board 223b reached.Middle web plate 223a, insulation board 223b reach down, and the diameter of the mesh of web plate 223c is 0.1～50mm.Preferably, the diameter of the mesh of web plate 223c was 0.1-3mm under middle web plate 223a, insulation board 223b reached.Middle web plate 223a, insulation board 223b reach down, and the mesh spacing of web plate 223c is 0-10mm.Preferably, the mesh spacing of web plate 223c was 0.1-5mm under middle web plate 223a, insulation board 223b reached.The material of last web plate 127, middle web plate 223a and following web plate 223c can adopt the material as low sputtering rastes such as graphite, carbon fiber or carborundum.Insulation board 223b material is selected poly-tetrafluoro.
The method that the device that produces eutral particle beam is produced eutral particle beam describes below.
After process gas enters reaction cavity 102 from air inlet 111, under the exciting of the snail type radio-frequency coil 122 that is loaded with pulse radiation frequency power, produce plasma 131 at reaction cavity 102.
In period, snail type radio-frequency coil 122 loads the power of radio-frequency power supply 121 at T1, and last web plate 127 is added with back bias voltage DC1(from Dc bias 124a), middle web plate bias voltage is 0, and the bias voltage of following web plate is 0, and direction of an electric field is up.There is ambipolar electric field in plasma, and anion is bound in plasma inside; And cation descends rapidly because of composite action density with electronics to the motion of the border of plasma, and the intensity of ambipolar electric field and electron energy also descend rapidly.Anion density descends slower, even can increase to some extent in the leading portion of T1 period.Anion moves in the web plate aperture under the acceleration of electric field, bumps and neutralization with hole wall, generates eutral particle beam 132 backs and arrives chip 104, realizes etching technics.
In period, the power of the radio-frequency power supply 121 that snail type radio-frequency coil 122 loads is 0 at T2, and following web plate 223c adds back bias voltage DC2(from Dc bias 124b), middle web plate 223a bias voltage is 0, and the bias voltage of last web plate 127 is 0, and direction of an electric field is down.At this moment, cation moves in the web plate aperture under the acceleration of electric field, bumps and neutralization with hole wall, arrives chip behind the generation neutral particle, realizes etching technics.
In like manner, also can add positive voltage at following web plate 223c in the period by T1, middle web plate 223a bias voltage is 0, and last web plate 127 bias voltages are 0, make the anion neutralization; Web plate 127 adds positive voltage on the T2 period inherence, and middle web plate 223a bias voltage is 0, and following web plate 223c bias voltage is 0, makes the cation neutralization.
DC1 and DC2 and snail type radio-frequency coil 122 added radio frequency sequential are as shown in Figure 4.
Therefore, in one-period, positive and negative ion can both neutralization, and the ion that the different process gas that has guaranteed to mix by a certain percentage generates all can be realized the neutralization corrasion.But adjust suitable T1, T2, DC1, parameter values such as DC2.T1, T2 are generally 0～500 microsecond.Preferably, T1, T2 are chosen as 50 microseconds.DC1, the value of DC2 is generally 0～-600V.Can be by regulating T1, T2, DC1, DC2 and adapt to different combination of gases are to satisfy technological requirement.
The device and method of the generation eutral particle beam that the embodiment of the invention provides adopts upper, middle and lower multi-layered net plate structure, in process gas enters reaction chamber, the pulse radiation frequency incentive condition produces plasma down, in one-period, on the web plate structure, load corresponding Dc bias at times, can control direction of an electric field, the accelerated particle motion, thereby just make, different particles such as anion can both be realized neutralization, and produce corrasion to chip, and improved the neutralization efficient of ion, guaranteed that the ion not of the same race in the mist all can produce corresponding corrasion, adapted to the gas with various combination, to satisfy the requirement of different etching technology.
The foregoing description is a preferred implementation of the present invention; but embodiments of the present invention are not restricted to the described embodiments; other any do not deviate from change, the modification done under spirit of the present invention and the principle, substitutes, combination, simplify; all should be the substitute mode of equivalence, be included within protection scope of the present invention.
Claims (9)
1. a device that produces eutral particle beam comprises reaction cavity, the slide holder of placing chip, plasma source, goes up web plate, and described web plate, plasma source and the described slide holder gone up is arranged on described reaction cavity inside, it is characterized in that:
Described last web plate is arranged on described plasma source top, is disposed with middle web plate, insulation board and following web plate between described plasma source and the described slide holder; The described web plate of going up is connected a direct current bias voltage respectively with described web plate down, described middle web plate ground connection.
2. device according to claim 1 is characterized in that:
The thickness of web plate was 0.1-500mm under web plate, insulation board reached in described.
3. device according to claim 2 is characterized in that:
The thickness of web plate was 10 mm under web plate, insulation board reached in described.
4. device according to claim 1 is characterized in that:
The diameter of the mesh of web plate was 0.1-50mm under web plate, insulation board reached in described; The web plate diameter of web plate was 20-5000mm under web plate, insulation board reached in described.
5. device according to claim 1 is characterized in that:
The mesh spacing of web plate was 0-10mm under web plate, insulation board reached in described.
6. device according to claim 5 is characterized in that:
The mesh spacing of web plate was 0.1-5mm under web plate, insulation board reached in described.
7. device according to claim 1 is characterized in that:
In described web plate, insulation board and down the shape of the mesh of web plate comprise cylindrical, hexagon, rhombus, rectangle.
8. the method based on each described device generation eutral particle beam of claim 1 ~ 7 is characterised in that, comprising:
In period, load radio frequency at T1, add negative voltage at last web plate, middle web plate bias voltage is 0, and following web plate bias voltage is 0, makes the anion neutralization;
In period, radio-frequency power is 0 at T2, adds negative voltage at following web plate, and middle web plate bias voltage is 0, and last web plate bias voltage is 0, makes the cation neutralization; Described T1, T2 are 0～0.1s.
9. the method based on each described device generation eutral particle beam of claim 1 ~ 7 is characterised in that, comprising:
In period, load radio frequency at T1, add positive voltage at last web plate, middle web plate bias voltage is 0, and following web plate bias voltage is 0, makes the anion neutralization;
In period, radio-frequency power is 0 at T2, adds negative voltage at following web plate, and middle web plate bias voltage is 0, and last web plate bias voltage is 0, makes the cation neutralization; Described T1, T2 are 0～0.1s.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110288064 CN102290314B (en) | 2011-09-26 | 2011-09-26 | Device for producing neutral particle beam and method thereof |
| PCT/CN2012/082097 WO2013044814A1 (en) | 2011-09-26 | 2012-09-26 | Neutral particle beam producing device and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110288064 CN102290314B (en) | 2011-09-26 | 2011-09-26 | Device for producing neutral particle beam and method thereof |
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| CN102290314A true CN102290314A (en) | 2011-12-21 |
| CN102290314B CN102290314B (en) | 2013-12-25 |
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| CN 201110288064 Active CN102290314B (en) | 2011-09-26 | 2011-09-26 | Device for producing neutral particle beam and method thereof |
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| WO (1) | WO2013044814A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013044814A1 (en) * | 2011-09-26 | 2013-04-04 | 中国科学院微电子研究所 | Neutral particle beam producing device and method |
| CN106653549A (en) * | 2015-11-03 | 2017-05-10 | 中微半导体设备(上海)有限公司 | Semiconductor processing equipment |
| CN110207947A (en) * | 2019-05-08 | 2019-09-06 | 南京航空航天大学 | Drop accelerator and method |
| CN114078685A (en) * | 2021-11-17 | 2022-02-22 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1608305A (en) * | 2001-08-03 | 2005-04-20 | 应用材料公司 | Suspended gas distribution manifold for plasma chamber |
| CN101930890A (en) * | 2009-06-26 | 2010-12-29 | 中微半导体设备(上海)有限公司 | Electrode component for plasma treatment, internal components for plasma treatment and manufacturing and separating method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100476903B1 (en) * | 2002-10-15 | 2005-03-17 | 주식회사 셈테크놀러지 | Neutral particle beam processing apparatus with enhanced conversion performance from plasma ions to neutral particles |
| JP2008128887A (en) * | 2006-11-22 | 2008-06-05 | Ae Kiki Engineering Co Ltd | Plasma source, high frequency ion source using it, negative ion source, ion beam processor, neutral particle beam incident device for nuclear fusion |
| CN102290314B (en) * | 2011-09-26 | 2013-12-25 | 中国科学院微电子研究所 | Device for producing neutral particle beam and method thereof |
-
2011
- 2011-09-26 CN CN 201110288064 patent/CN102290314B/en active Active
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2012
- 2012-09-26 WO PCT/CN2012/082097 patent/WO2013044814A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1608305A (en) * | 2001-08-03 | 2005-04-20 | 应用材料公司 | Suspended gas distribution manifold for plasma chamber |
| CN101930890A (en) * | 2009-06-26 | 2010-12-29 | 中微半导体设备(上海)有限公司 | Electrode component for plasma treatment, internal components for plasma treatment and manufacturing and separating method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013044814A1 (en) * | 2011-09-26 | 2013-04-04 | 中国科学院微电子研究所 | Neutral particle beam producing device and method |
| CN106653549A (en) * | 2015-11-03 | 2017-05-10 | 中微半导体设备(上海)有限公司 | Semiconductor processing equipment |
| CN110207947A (en) * | 2019-05-08 | 2019-09-06 | 南京航空航天大学 | Drop accelerator and method |
| CN114078685A (en) * | 2021-11-17 | 2022-02-22 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
| CN114078685B (en) * | 2021-11-17 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2013044814A1 (en) | 2013-04-04 |
| CN102290314B (en) | 2013-12-25 |
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Effective date of registration: 20180815 Address after: 101111 Beijing City Economic and Technological Development Zone Tianhua garden two Li two district 19 buildings F1B9 Patentee after: ZHONGKE AIER (BEIJING) TECHNOLOGY Co.,Ltd. Address before: No. 3, North Tu Cheng West Road, Chaoyang District, Beijing Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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Denomination of invention: Device and method for generating neutral particle beam Effective date of registration: 20220623 Granted publication date: 20131225 Pledgee: Beijing Yizhuang International Financing Guarantee Co.,Ltd. Pledgor: ZHONGKE AIER (BEIJING) TECHNOLOGY Co.,Ltd. Registration number: Y2022980008766 |