CN102286780B - Polycrystalline furnace infrared temperature controlling device and polycrystalline furnace adopting same - Google Patents
Polycrystalline furnace infrared temperature controlling device and polycrystalline furnace adopting same Download PDFInfo
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- CN102286780B CN102286780B CN201110251125.8A CN201110251125A CN102286780B CN 102286780 B CN102286780 B CN 102286780B CN 201110251125 A CN201110251125 A CN 201110251125A CN 102286780 B CN102286780 B CN 102286780B
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Abstract
The invention relates to a polycrystalline furnace infrared temperature controlling device and a polycrystalline furnace adopting same, belonging to the technical field of monocrystalline silicon production equipment. The polycrystalline furnace infrared temperature controlling device comprises a Keyence KV-5000PLC, an infrared thermometer, a graphite heater, an alternating current (AC) power source, a personal computer (PC), a control box, an operating platform and an operation box, wherein the infrared thermometer is fixed on an upper cavity and is connected with the Keyence KV-5000PLC; a to-be-measured signal is transmitted to the Keyence KV-5000PLC by utilizing the infrared thermometer; the infrared thermometer is regulated through tools to ensure that the infrared thermometer is directed at a temperature measuring point; a Keyence KV-5000PKLC is arranged in the control box; the AC power source is arranged on the operating platform; and the PC is arranged on the operation box. The polycrystalline furnace infrared temperature controlling device and the polycrystalline furnace adopting same, provided by the invention, have the beneficial effects of: improving equipment reliability, satisfying the safety production of polycrystalline silicon ingots, reducing the production cost of the casting ingots and being simple in installation.
Description
Technical field:
The present invention relates to silicon single crystal manufacturing apparatus technical field, particularly the polycrystalline furnace of the infrared temperature regulating device of a kind of polycrystalline furnace and the infrared temperature regulating device of employing polycrystalline furnace.
Background technology:
At present, the production technique of preparing silicon for solar cell ingot mainly comprises that pulling single crystal silicon and polysilicon draw.Polycrystalline silicon ingot casting technology is because thereby square silicon ingot, the manufacturing processed that the direct founding of energy goes out to be suitable for large-scale production relatively simply becomes main stream approach prepared by silicon for solar cell ingot.
Large size side's ingot of preparing solar energy polycrystal silion cell, once loads silicon material 240-270kg, and product is very expensive.Its production process comprises the heating of silicon material, fusing, growth, annealing, process of cooling, reaches 50 hours.Adopt single warm area temperature control; melt temperature is up to 1540 ℃; therefore temperature sensor adopts Type B thermopair; highest detection temperature is 1800 ℃, and thermo wires is noble metal platinum rhodium material, and skin is ceramic protecting pipe; at different temperature; temperature-control heat couple the two poles of the earth produce different weak voltage signals, are linked in temperature regulator, detect furnace temperature.The whole process of casting ingot process vacuumizes; because temperature-control heat couple is placed under high temperature and vacuum state and the carbon volatilizing under graphite heater high temperature infiltration and thermocouple protection vitrified pipe and thermo wires platinum rhodium material react etc. for a long time, easily cause that thermopair is disconnected even, aging, inefficacy and vacuum leak.Once temperature-control heat couple breaks down, will have a strong impact on silicon ingot and produce, cause very large financial loss.
Summary of the invention:
In view of this, be necessary to provide a kind of safety in production that improves equipment dependability, meets polycrystal silicon ingot, reduce ingot casting production cost and the infrared temperature regulating device of simple polycrystalline furnace is installed.
Also be necessary to provide a kind of polycrystalline furnace that adopts the infrared temperature regulating device of polycrystalline furnace, polycrystalline furnace comprises upper cavity.
The infrared temperature regulating device of a kind of polycrystalline furnace comprises Keyemce KV-5000PLC, infrared thermometer, graphite heater, AC power supplies, PC, controlling box, service platform, operation box.。Infrared thermometer is fixed on above upper cavity, infrared thermometer is connected with Keyemce KV-5000PLC, Keyemce KV-5000PKLC and PC are connected, AC power supplies one end is connected with Keyemce KV-5000PKL, the AC power supplies the other end is connected with graphite heater, by frock, adjust infrared thermometer, infrared thermometer is aimed at point for measuring temperature; Keyemce KV-5000PKLC is arranged in controlling box, and AC power supplies is arranged on service platform, and PC is arranged on operation box.
The infrared temperature regulating device of polycrystalline furnace provided by the invention, in polycrystalline silicon ingot casting process, through dissolving, long brilliant, during annealing operation, infrared thermometer is measured the interior temperature of cavity and the temperature data of measurement is fed back to Keyemce KV-5000PLC, Keyemce KV-5000PLC transfers to PC by the temperature data of acquisition, PC obtains target temperature and the temperature data comparative analysis in sequence of control instruction from Keyemce KV-5000PLC, then PC transfers to Keyemce KV-5000PLC by comparative analysis signal, Keyemce KV-5000PLC assigns the voltage and current of instruction control AC power supplies, and then control graphite heater heating power, form a temperature PID circulation, according to the requirement of polycrystalline silicon casting ingot process temperature, with temperature PID, carry out power ratio control, thereby reach processing requirement.
As can be seen here, beneficial effect of the present invention is: improve equipment dependability, meet safety in production, the reduction ingot casting production cost of polycrystal silicon ingot and install simple.
Accompanying drawing explanation:
Accompanying drawing 1 is the infrared temperature regulating device of polycrystalline furnace of the present invention and the polycrystalline furnace structural representation that adopts the infrared temperature regulating device of polycrystalline furnace.
In figure:
Keyemce KV-5000PLC1 infrared thermometer 2 graphite heaters 3
Embodiment:
The infrared temperature regulating device of polycrystalline furnace that the present invention proposes and the polycrystalline furnace that adopts the infrared temperature regulating device of polycrystalline furnace by reference to the accompanying drawings and preferred embodiment be described in detail as follows:
Please refer to Fig. 1, the polycrystalline furnace of the infrared temperature regulating device of polycrystalline furnace and the infrared temperature regulating device of employing polycrystalline furnace, wherein adopts the polycrystalline furnace of the infrared temperature regulating device of polycrystalline furnace to comprise upper cavity (not label).
The infrared temperature regulating device of a kind of polycrystalline furnace comprises Keyemce KV-5000PLC 1, infrared thermometer 2, graphite heater 3, AC power supplies 4, PC 5, controlling box (not shown), service platform (not shown), operation box (not shown).Infrared thermometer 2 is fixed on upper cavity (not label) above, and infrared thermometer 2 is transferred to the temperature data of measurement in Keyemce KV-5000PLC 1, by frock, adjusts infrared thermometer 2, and infrared thermometer 2 is aimed at point for measuring temperature; Keyemce KV-5000PKLC 1 is arranged in controlling box (not shown), and AC power supplies 4 is arranged in service platform (not shown), and PC 5 is arranged in operation box (not shown).
Claims (1)
1. a polycrystalline furnace that adopts the infrared temperature regulating device of polycrystalline furnace, polycrystalline furnace comprises upper cavity, it is characterized in that: the infrared temperature regulating device of polycrystalline furnace comprises Keyemce KV-5000PLC, infrared thermometer, graphite heater, AC power supplies, PC, controlling box, service platform, operation box; Infrared thermometer is fixed on above upper cavity, infrared thermometer is connected with Keyemce KV-5000PLC, Keyemce KV-5000PKLC and PC are connected, AC power supplies one end is connected with Keyemce KV-5000PKL, the AC power supplies the other end is connected with graphite heater, Keyemce KV-5000PKLC is arranged in controlling box, and AC power supplies is arranged on service platform, and PC is arranged on operation box.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110251125.8A CN102286780B (en) | 2011-08-30 | 2011-08-30 | Polycrystalline furnace infrared temperature controlling device and polycrystalline furnace adopting same |
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| CN201110251125.8A CN102286780B (en) | 2011-08-30 | 2011-08-30 | Polycrystalline furnace infrared temperature controlling device and polycrystalline furnace adopting same |
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| CN102286780A CN102286780A (en) | 2011-12-21 |
| CN102286780B true CN102286780B (en) | 2014-04-16 |
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| CN102605424A (en) * | 2012-03-06 | 2012-07-25 | 浙江宏业新能源有限公司 | Control system for polysilicon ingot furnace and control method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102108544A (en) * | 2010-10-08 | 2011-06-29 | 常州天合光能有限公司 | Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface |
| CN202390572U (en) * | 2011-08-30 | 2012-08-22 | 宁夏日晶新能源装备股份有限公司 | Polycrystal furnace adopting polycrystal furnace infrared temperature controlling device |
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| JP4317575B2 (en) * | 2005-08-19 | 2009-08-19 | Ｓｕｍｃｏソーラー株式会社 | Silicon electromagnetic casting apparatus and operation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102108544A (en) * | 2010-10-08 | 2011-06-29 | 常州天合光能有限公司 | Thermal field structure used in polycrystalline silicon ingot furnace for controlling crystal growth interface |
| CN202390572U (en) * | 2011-08-30 | 2012-08-22 | 宁夏日晶新能源装备股份有限公司 | Polycrystal furnace adopting polycrystal furnace infrared temperature controlling device |
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Address after: Sheng Road Economic Development Zone Shizuishan city the Ningxia Hui Autonomous Region Xin 753000 Patentee after: Ningxia Rijing New Energy Euipment Co., Ltd. Address before: Sheng Road Economic Development Zone Shizuishan city the Ningxia Hui Autonomous Region Xin 753000 Patentee before: Ningxia Rijing New Energy Euipment Co., Ltd. |