CN102285634A - Method for constructing flexible strain sensor based on ZnO micro/nano material - Google Patents
Method for constructing flexible strain sensor based on ZnO micro/nano material Download PDFInfo
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- CN102285634A CN102285634A CN2011102075742A CN201110207574A CN102285634A CN 102285634 A CN102285634 A CN 102285634A CN 2011102075742 A CN2011102075742 A CN 2011102075742A CN 201110207574 A CN201110207574 A CN 201110207574A CN 102285634 A CN102285634 A CN 102285634A
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Abstract
The invention discloses a method for constructing a flexible strain sensor based on a ZnO micro/nano material, and relates to the technical fields of nano technologies and semiconductor device manufacturing. The strain sensor comprises a ZnO single crystal micro/nano material, a silver electrode, a packaging layer polydimethylsiloxane (PDMS) and a flexible substrate (PDMS and polyimide (PI) films), wherein the ZnO single crystal micro/nano material with the length of between 2 and 8mm and the diameter of between 0.5 and 5 mu m is prepared by a gas phase method and is transferred to the flexible substrate by a contact printing method. The packaged device can be used in a corrosive environment of acid/alkali and the like, has relatively high fit degree on operating surfaces with different kinds of roughness, has extremely high signal response to small strain, and can be used for the aspects of bridge detection, automobile shock absorption detection, biological medical equipment and the like.
Description
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Technical field
The present invention relates to nanometer technology and semiconductor device processing technology field, relate in particular to a kind of construction method of ZnO micro-/ nano material flexibility strain transducer.
Background technology
Along with the continuous development of national defence, medicine equipment and electronics industry, the research of microcomputer/receive machine system field (MEMS/NEMS) is just presenting by leaps and bounds and is increasing.Monodimension nanometer material, comprise nano wire/rod, nanometer band, nanoneedle, nano coaxial cable and nanotube etc., have unique electricity, mechanics, optics and the character such as mutual coupling effect between them, be considered to construct the basis of electronics of future generation, photoelectron, nano mechanical device.Zinc oxide is typical direct band gap semiconductor material with wide forbidden band, has special conduction, heat conductivility, and chemical property is highly stable.Simultaneously, zinc oxide has piezoelectric property, can realize the conversion of mechanical energy to electric energy in the inner concentration that produces the piezoelectricity electromotive force and influence carrier of micro-/ nano line under non-axial stress.At present, existing in the world based on ZnO nano material piezoelectric property prepare microcomputer/receive machine systematic research (Piezoelectric Nanogenerators Based on Zinc Oxide Nanowire Arrays. " Science ", 2006, Vol. 312, no. 5771,242-246; Piezoelectric Gated Diode of a Single ZnO Nanowire. " Advanced Materials ", 2007, Vol 19, Issue 6,781 – 784).But above-mentioned research usually will be by AFM (AFM) or nanometer control system.All than higher, complicated operation is not suitable for a large amount of productions to these equipment to the requirement of environment and material.
Summary of the invention
The object of the present invention is to provide the construction method of the flexible strain transducer of a kind of high sensitivity,, small strain is had very high quick response, thereby fracture, vibrations and aging the playing of equipment are detected and forewarning function to adapt to the working surface of different roughness.Simultaneously, simplifying technology also is our free-revving engine with reducing cost.
A kind of construction method of ZnO micro-/ nano material flexibility strain transducer, mainly realize by following three parts:
1. the preparation of micro-/ nano ZnO material
A) silicon (1 0 0) substrate is rinsed well 40～60 ℃ of oven dry respectively with deionized water and alcohol.Then in the thick gold thin film of silicon chip surface spraying 5-20nm, as deposition substrate;
B) Zn powder (purity〉99.9%) and C powder are pressed atomic ratio 0.5:1 ~ 1:2 and mix, fully grind evenly and be placed in the porcelain boat, with the silicon chip back-off on porcelain boat;
C) porcelain boat is put into the quartz ampoule middle part of tube furnace, regulated flowmeter and in pipe, feed argon gas: oxygen=50:1 ~ 50:2.Under this atmosphere, tube furnace is warming up to 970 ℃ ~ 1000 ℃ and be incubated 20 ~ 30 minutes, obtains required micro-/ nano line ZnO material.The micro-/ nano line ZnO of preparation is a monocrystalline, and length is 2-8mm, and diameter is 0.5-5 μ m.
2. flexible strain transducer builds
A) adopting alcohol is solvent, with the ultrasonic dispersion of micro-/ nano line ZnO, then with the micro-/ nano line ZnO drips of solution of disperseing on silicon chip;
B) adopt contact printing method that the micro-/ nano line ZnO on the silicon chip is transferred on the flexible substrates, wherein flexible substrates thickness is 0.5 ~ 4mm, to guarantee good pliability.The method makes micro-/ nano line ZnO form tight the contact with flexible substrates; The flexible substrates that adopts is dimethyl silicone polymer (PDMS) or Kapton (PI).
C)With elargol the two ends of micro-/ nano line ZnO are fixed, and, made excellent contact interface between elargol electrode and micro-/ nano line ZnO at 100 ~ 120 ℃ of down dry 30～50min.
3. the encapsulation of flexible strain transducer
Dimethyl silicone polymer (PDMS) is coated in electrode and micro-/ nano line ZnO surface, leaves standstill 30～60min under the room temperature vacuum condition, 70～90 ℃ are incubated 2～3h down, finish encapsulation and structure to device.
It is the visible ZnO one dimension of millimetre-sized macroscopic view micro-/ nano material that the present invention adopts vapor phase method to prepare length, and has made up strain transducer in special transparent flexible substrate.The manufacture craft of device is simple, and compact size is highly sensitive, can be used for aspects such as bridge detection, automobile shock detection and biologic medical apparatus.
The invention has the advantages that:
1. the present invention has prepared micro-/ nano ZnO material, and length is 2-8mm, and diameter is 0.5-5 μ m.This micro-/ nano line is a monocrystal material, good crystallinity, and crystal growth is oriented to [0001], has excellent piezoelectric property, can be applicable to piezoelectricity microcomputer/receive machine systematic research.
2. the present invention adopts flexible substrates (PDMS, PI etc.), and uses the PDMS packaging.Therefore, overcome the fragility of ZnO nano wire, prolonged the life-span of device; And can under corrosive atmospheres such as acid/alkali, use, expand the range of application of Metal Substrate sensor; Simultaneously, flexible substrates has improved the sensitivity of device to strain or vibrations.
The strain transducer that makes up of the present invention can be under macroscopic conditions by ordinary optical microscope assembling finish, do not need nanometer to control precision equipments such as platform.
Description of drawings
The structural representation of the flexible effector of Fig. 1
Fig. 2 is the stereoscan photograph of flexible strain transducer.Therefrom can find out the pattern and ZnO and the interelectrode situation that contacts of ZnO micro wire.
Fig. 3 is the flexible strain transducer current-responsive curve of frequency to external world.Can find out that therefrom ZnO has good current-responsive to small strain.
The specific embodiment
Now further specify technical scheme of the present invention in conjunction with diagram and example.Following examples are carried out according to the operating procedure of above-mentioned explanation fully, and succinct for making style of writing, each following embodiment is only enumerated crucial technical parameter.
Embodiment 1:
At first, silicon chip is rinsed well 40 ℃ of oven dry respectively with deionized water and alcohol.In the thick gold thin film of silicon chip surface spraying 8nm.Zn powder (purity〉99.9%) and C powder are pressed atomic ratio 1:1 mix, fully grind evenly and be placed in the porcelain boat, with the silicon chip back-off on porcelain boat.Porcelain boat is put in the middle part of the quartz ampoule of tube furnace, regulated flowmeter and in pipe, feed argon gas: oxygen=50:1.Under this atmosphere, tube furnace is warming up to 970 ℃ and be incubated 30 minutes, finishes the preparation of ZnO micro-/ nano material.Then, on silicon chip, adopt contact printing method that micro-/ nano line ZnO is transferred in the PDMS substrate ZnO micro-/ nano dispersion of materials, the two ends of micro-/ nano line ZnO are fixed with elargol, and at 120 ℃ of following dry 30min.At last, PDMS is coated in electrode and ZnO surface, leaves standstill 30min under the room temperature vacuum condition, 70 ℃ are incubated 2 hours down, finish the encapsulation to device.Two silver electrodes are inserted external circuit can finish signal detection.
Embodiment 2:
At first, silicon chip is rinsed well 40 ℃ of oven dry respectively with deionized water and alcohol.In the thick gold thin film of silicon chip surface spraying 8nm.Zn powder (purity〉99.9%) and C powder are pressed atomic ratio mix, fully grind evenly and be placed in the porcelain boat, with the silicon chip back-off on porcelain boat.Porcelain boat is put in the middle part of the quartz ampoule of tube furnace, regulated flowmeter and in pipe, feed argon gas: oxygen=50:1.Under this atmosphere, tube furnace is warming up to 970 ℃ and be incubated 30 minutes, finishes the preparation of micro-/ nano material ZnO.Then, ZnO is dispersed on the silicon chip with the micro-/ nano material, adopts contact printing method that micro-/ nano line ZnO is transferred on the PI film substrate, with elargol the two ends of micro-/ nano line ZnO are fixed, and at 120 ℃ of following dry 30min.At last, PDMS is coated in electrode and ZnO surface, leaves standstill 30min under the room temperature vacuum condition, 70 ℃ are incubated 2 hours down, finish the encapsulation to device.Two silver electrodes are inserted external circuit can finish signal detection.
Claims (3)
1. the construction method of a ZnO micro-/ nano material flexibility strain transducer, its feature is realized by following three parts:
The preparation of micro-/ nano ZnO material
Silicon (1 0 0) substrate is rinsed well 40～60 ℃ of oven dry respectively with deionized water and alcohol;
Then in the thick gold thin film of silicon chip surface spraying 5-20nm, as deposition substrate;
Zn powder (purity〉99.9%) and C powder are pressed atomic ratio 0.5:1 ~ 1:2 mix, fully grind evenly and be placed in the porcelain boat, with the silicon chip back-off on porcelain boat;
Porcelain boat is put into the quartz ampoule middle part of tube furnace, regulate flowmeter and in pipe, feed argon gas: oxygen=50:1 ~ 50:2, under this atmosphere, tube furnace is warming up to 970 ℃ ~ 1000 ℃ and be incubated 20 ~ 30 minutes, obtain required micro-/ nano line ZnO material;
Building of flexible strain transducer
Employing alcohol is solvent, with the ultrasonic dispersion of micro-/ nano line ZnO, then with the micro-/ nano line ZnO drips of solution of disperseing on silicon chip;
Adopt contact printing method that the micro-/ nano line ZnO on the silicon chip is transferred on the flexible substrates, flexible substrates thickness 0.5 ~ 4mm wherein, to guarantee good pliability, the method makes micro-/ nano line ZnO form tight the contact with flexible substrates;
With elargol the two ends of micro-/ nano line ZnO are fixed, and, made excellent contact interface between elargol electrode and ZnO at 100 ~ 120 ℃ of down dry 30～50min;
The encapsulation of flexible strain transducer
Dimethyl silicone polymer is coated in electrode and micro-/ nano line ZnO surface, leaves standstill 30～60min under the room temperature vacuum condition, 70～90 ℃ are incubated 2～3h down, finish encapsulation and structure to flexible strain transducer.
2. the construction method of ZnO micro-/ nano material flexibility strain transducer according to claim 1 is characterized in that the micro-/ nano line ZnO for preparing is a monocrystalline, and length is 2-8mm, and diameter is 0.5-5 μ m.
3. the construction method of ZnO micro-/ nano material flexibility strain transducer according to claim 1 is characterized in that the flexible substrates that adopts is dimethyl silicone polymer or Kapton.
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Cited By (13)
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| CN103112818A (en) * | 2013-02-28 | 2013-05-22 | 北京科技大学 | Method of manufacturing metal electrodes on single micro-nano line by utilizing scanning electron microscope |
| CN104613860A (en) * | 2015-01-26 | 2015-05-13 | 北京科技大学 | Flexible wearable paper-based strain sensor and preparation method thereof |
| CN104677879A (en) * | 2015-02-11 | 2015-06-03 | 中国科学院金属研究所 | Flexible and transparent gas sensor based on semiconductive single-walled carbon nanotube |
| CN105318822A (en) * | 2014-07-02 | 2016-02-10 | 北京科技大学 | Flexible strain sensor based on ultra-long tellurium microwire |
| CN106152930A (en) * | 2016-06-24 | 2016-11-23 | 北京科技大学 | A kind of highly sensitive flexible wearable strain transducer and low-cost production's method thereof |
| CN108766630A (en) * | 2018-05-29 | 2018-11-06 | 五邑大学 | A kind of flexible sensor based on metal nanometer line, and preparation method thereof |
| CN108872049A (en) * | 2018-06-21 | 2018-11-23 | 浙江钱浪智能信息科技有限公司 | A kind of flexible sensor and monitoring method suitable for big data monitoring corrosiveness of the environment |
| CN109941954A (en) * | 2019-03-04 | 2019-06-28 | 华东师范大学 | A kind of flexibility temperature sensor and preparation method |
| CN111230928A (en) * | 2020-01-20 | 2020-06-05 | 腾讯科技（深圳）有限公司 | Proximity sensor, electronic skin, manufacturing method and proximity sensing method |
| CN111251326A (en) * | 2020-01-20 | 2020-06-09 | 腾讯科技（深圳）有限公司 | Proximity sensor, electronic skin, manufacturing method and proximity sensing method |
| WO2021243647A1 (en) * | 2020-06-04 | 2021-12-09 | 中国科学院深圳先进技术研究院 | Conductive hydrogel injection-based flexible sensor and manufacturing method therefor |
| CN114383725A (en) * | 2021-12-20 | 2022-04-22 | 之江实验室 | Fully-printed flexible wireless ultraviolet sensing patch based on ZnO precursor ink |
| CN115219571A (en) * | 2022-07-13 | 2022-10-21 | 西安交通大学 | Self-powered flexible sensor and preparation method thereof |
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Cited By (17)
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| CN103112818A (en) * | 2013-02-28 | 2013-05-22 | 北京科技大学 | Method of manufacturing metal electrodes on single micro-nano line by utilizing scanning electron microscope |
| CN103112818B (en) * | 2013-02-28 | 2015-05-20 | 北京科技大学 | Method of manufacturing metal electrodes on single micro-nano line by utilizing scanning electron microscope |
| CN105318822A (en) * | 2014-07-02 | 2016-02-10 | 北京科技大学 | Flexible strain sensor based on ultra-long tellurium microwire |
| CN105318822B (en) * | 2014-07-02 | 2017-09-29 | 北京科技大学 | A kind of flexible strain transducer based on overlength tellurium micro wire |
| CN104613860A (en) * | 2015-01-26 | 2015-05-13 | 北京科技大学 | Flexible wearable paper-based strain sensor and preparation method thereof |
| CN104677879A (en) * | 2015-02-11 | 2015-06-03 | 中国科学院金属研究所 | Flexible and transparent gas sensor based on semiconductive single-walled carbon nanotube |
| CN104677879B (en) * | 2015-02-11 | 2017-06-20 | 中国科学院金属研究所 | A kind of flexible, transparent gas sensor based on semi-conductive single-walled carbon nanotubes |
| CN106152930A (en) * | 2016-06-24 | 2016-11-23 | 北京科技大学 | A kind of highly sensitive flexible wearable strain transducer and low-cost production's method thereof |
| CN108766630A (en) * | 2018-05-29 | 2018-11-06 | 五邑大学 | A kind of flexible sensor based on metal nanometer line, and preparation method thereof |
| CN108872049A (en) * | 2018-06-21 | 2018-11-23 | 浙江钱浪智能信息科技有限公司 | A kind of flexible sensor and monitoring method suitable for big data monitoring corrosiveness of the environment |
| CN109941954A (en) * | 2019-03-04 | 2019-06-28 | 华东师范大学 | A kind of flexibility temperature sensor and preparation method |
| CN111230928A (en) * | 2020-01-20 | 2020-06-05 | 腾讯科技（深圳）有限公司 | Proximity sensor, electronic skin, manufacturing method and proximity sensing method |
| CN111251326A (en) * | 2020-01-20 | 2020-06-09 | 腾讯科技（深圳）有限公司 | Proximity sensor, electronic skin, manufacturing method and proximity sensing method |
| WO2021243647A1 (en) * | 2020-06-04 | 2021-12-09 | 中国科学院深圳先进技术研究院 | Conductive hydrogel injection-based flexible sensor and manufacturing method therefor |
| CN114383725A (en) * | 2021-12-20 | 2022-04-22 | 之江实验室 | Fully-printed flexible wireless ultraviolet sensing patch based on ZnO precursor ink |
| CN114383725B (en) * | 2021-12-20 | 2023-11-28 | 之江实验室 | Full-printing flexible wireless ultraviolet sensing patch based on ZnO precursor ink |
| CN115219571A (en) * | 2022-07-13 | 2022-10-21 | 西安交通大学 | Self-powered flexible sensor and preparation method thereof |
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