KR101742173B1 - A triboelectric based hydrogen sensor and a method for manufacturing the same - Google Patents
A triboelectric based hydrogen sensor and a method for manufacturing the same Download PDFInfo
- Publication number
- KR101742173B1 KR101742173B1 KR1020150163880A KR20150163880A KR101742173B1 KR 101742173 B1 KR101742173 B1 KR 101742173B1 KR 1020150163880 A KR1020150163880 A KR 1020150163880A KR 20150163880 A KR20150163880 A KR 20150163880A KR 101742173 B1 KR101742173 B1 KR 101742173B1
- Authority
- KR
- South Korea
- Prior art keywords
- zno
- triboelectric
- pyramid
- hydrogen sensor
- hydrogen
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/60—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrostatic variables, e.g. electrographic flaw testing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
Abstract
More particularly, the present invention relates to a triboelectric-based hydrogen sensor comprising a ZnO nanorod with a Pd nanoparticle added thereto and a polydimethylsiloxane (PDMS) in the form of a pyramid, ≪ / RTI > The triboelectric-based hydrogen sensor according to the present invention is a hydrogen sensor in which Pd nanoparticle-added ZnO nano-rods and pyramid-shaped PDMS are in contact with each other, . The triboelectric-based hydrogen sensor according to the present invention has a hydrogen gas detection range of 10 ppm to 10,000 ppm, and is capable of recording hydrogen detection directly as a voltage, and has an advantage of easy signal processing and little noise.
Description
The present invention relates to a triboelectric-based hydrogen sensor and a method of manufacturing the same. More particularly, the present invention relates to a triboelectric-based hydrogen sensor including a ZnO nanorod (NR) doped with Pd nanoparticles and a polydimethylsiloxane To a hydrogen sensor and a method of manufacturing the same.
Hydrogen (H 2 ) is a promising gas, but its invisibility, low sparking energy of 0.017 mJ, and flash point of 250 ° C represent a danger of electrostatic discharge (see Non-Patent Document 1). Most of the gas sensors for H 2 detection are semiconductor-metal-oxide (SMO) based. On the other hand, electrostatic discharge contains a very small amount of energy, although this can easily degrade sensor performance in H 2 environments. Therefore, the development of rapid response with high sensitivity in antistatic prevention systems is the main topic of study. Many SMO substance (see Non-Patent Document 2) in the (for example, ZnO, SnO 2, In 2 O 3, WO 3), the resistance type, capacitor type (see Non-Patent Document 3), optical (non-patent reference 4 (1D) ZnO-based H 2 sensing platforms of the piezoelectric type (see Non-Patent Document 5) are the most frequently reported. They have a high surface-to-volume ratio. Of these, resistive-type sensors have been the most widely studied due to their high sensitivity and fast response in H 2 atmosphere. However, due to the demand for a bias power source, the operating temperature range and the lack of flexibility (due to the rigid substrate being fragile), the predicted performance from ZnO resistive sensors has not really materialized.
Numerous studies devoted to flexible H 2 sensors have succeeded in improving stability and surpassing the requirements for high temperature operation (see Non-Patent
In this way, Rashid et al. Showed strong bending properties with 91% sensitivity and a low detection limit of 0.2 ppm for H 2 concentration (see Non-Patent Document 2). Recently, Lee et al. Have studied a reduced graphene oxide (RGO) -based smart radio sensing system that shows the potential for phase shift with varying gas concentrations (see Non-Patent Literature 8). However, lower sensitivity and longer time to response may be a barrier to use. With regard to various types of flexible sensors, the basic requirements for external power sources still provide additional motivation for further research.
In order to overcome these limitations, it has been proposed that ethanol (see Non-Patent Documents 11 to 13), glucose (see Non-Patent Document 14), pH (see Non-Patent Document 15), H 2- S (see Non-Patent
Triboelectric-based seonsor simply operates by triboelectric contact between two materials that are ranked differently in the triboelectric-series and by the formation of a dipole layer after static isolation (see Non-Patent Literature 18). Wang-group has developed a method for manufacturing fast and simple triboelectric based self-generating chemicals and gas sensors (see Non-Patent Documents 19 to 22). These indicate that molecular adsorption by the surface causes a resistance change, which shows a different output depending on the concentration. The triboelectric surface resistivity is affected by a small amount of opposite charge. Thus, due to the finite conductivity, metal oxides such as ZnO can also provide triboelectric properties instead of triboelectric-series materials (see Non-Patent
In this study, we have shown that the Pd nanoparticles (NPs) added to a 1D ZnO nanorod (NR) array and the reverse pyramid of PDMS for triboelectric operation as an in-vivo energy harvester Layer structure for gas sensing comprising a novel structure. In addition, the present inventors have triboelectric H 2 based gas sensor, and characterized by its performance as (triboelectric-based H 2 gas sensor TEHS).
It is an object of the present invention to provide a triboelectric-based hydrogen sensor and a method of manufacturing the same. In particular, ZnO nano-rods with Pd nanoparticles added and pyramid-shaped PDMSs were contacted by fabricating a triboelectric-based hydrogen sensor including ZnO nanorods with Pd nanoparticles added and polydimethylsiloxane (PDMS) in the form of pyramids The mechanical energy is converted into electric energy and the hydrogen gas can be detected through the triboelectric effect as the contact is broken. Also, the tritium-based hydrogen sensor according to the present invention was intended to detect hydrogen gas in the range of 10 ppm to 10,000 ppm, and the hydrogen detection was performed by directly recording the voltage, so that the signal processing was easy and noise was minimized.
In order to achieve the above object, the present invention provides a triboelectric-based hydrogen sensor comprising a ZnO nanorod with Pd nanoparticles added thereto and a polydimethylsiloxane in the form of a pyramid.
The present invention also provides a method of manufacturing a triboelectric-based hydrogen sensor comprising the steps of:
(a) fabricating a top comprising a ZnO nanorod, an anode and a substrate to which Pd nanoparticles have been added;
(b) fabricating a bottom comprising a polydimethylsiloxane, a cathode, and a substrate in the form of a pyramid; And
(c) positioning the two spacers between the top and bottom with the top and bottom facing each other.
In one embodiment of the present invention, a triboelectric-based hydrogen sensor according to the present invention comprises a Pd nanoparticle-doped ZnO nanorod, an anode and a substrate; And polydimethylsiloxane in the form of a pyramid, a cathode, and a lower portion including the substrate, so that the upper part and the lower part can be separated from each other.
In one embodiment of the present invention, the triboelectric-based hydrogen sensor according to the present invention can detect hydrogen by triboelectricity by contacting and separating a ZnO nanorod with Pd nanoparticles added and a polydimethylsiloxane in the form of a pyramid have.
In an embodiment of the present invention, the Pd nanoparticles may be added to ZnO nanorods by sputtering on ZnO nanorods. However, the present invention is not limited thereto. For example, e-beam, Pulsed laser deposition (PLD) or atomic laser deposition (ALD) may be used.
In one embodiment of the present invention, the pyramid may have an edge length in the form of 10 [mu] m to 100 [mu] m, but is not limited thereto.
In one embodiment of the present invention, the length of the ZnO nano-rods may be 0.1 μm to 10 μm, but is not limited thereto.
In one embodiment of the present invention, the size of the Pd nanoparticles may be 1 nm to 50 nm, but is not limited thereto.
In one embodiment of the present invention, the triboelectric-based hydrogen sensor according to the present invention may have a hydrogen gas detection range of 10 ppm to 10,000 ppm at room temperature, but is not limited thereto.
In one embodiment of the present invention, the triboelectric-based hydrogen sensor according to the present invention can record the output voltage according to the hydrogen detection.
In one embodiment of the present invention, the anode may be Au or Al, but is not limited thereto.
In one embodiment of the present invention, the cathode may be Al or Au, but is not limited thereto.
In one embodiment of the present invention, the substrate may be PET or PI, but is not limited thereto.
In an embodiment of the present invention, the size of the spacer may be 200 μm to 1000 μm, and the spacer may be an adhesive tape available from PDMS, PT, PET or 3M.
More particularly, the present invention relates to a triboelectric-based hydrogen sensor comprising a ZnO nanorod with a Pd nanoparticle added thereto and a polydimethylsiloxane (PDMS) in the form of a pyramid, ≪ / RTI > In the conventional electrochemical hydrogen sensor, the resistance change must be changed to a voltage by using a Wheatstone bridge or the like. In contrast, the triboelectricity-based hydrogen sensor according to the present invention can record hydrogen detection with a voltage, It is easy and has little noise. Further, since the triboelectric-based hydrogen sensor according to the present invention can generate electricity due to the electric power generated by the triboelectricity, an external power source is not required, and the generated electric power is stored in a capacitor and used for signal processing and communication There is an advantage that it can be.
Figure 1 shows a manufacturing method for a triboelectric-based H 2 sensor; It shows the growth mechanism for Pd NPs / ZnO NRs on the PET substrate in the upper part and shows the synthesis of the inverted pyramid on the PDMS in the lower part.
Figure 2 (a) shows an FESEM image of a PDMS surface deformation by a pyramid, shown by a typical top view, which shows a tilted image for a surface in a high-resolution micrograph of a single pyramid. Figure 2 (b) shows a micrograph of ZnO NRs from the top and cross section. Figure 2 (c) shows a low magnification TEM image, which shows Pd NPs dispersed on a single ZnO NR head. 2 (d) is an HRTEM image of the hybrid structure, which shows the growth direction for the possible SAED pattern given in the illustration. Fig. 2 (e) shows XRD data showing diffraction peaks for the original ZnO and Pd NPs / ZnO NRs. 2 (f) shows an optical image of the device for measuring H 2 gas.
Figure 3 (a) shows the open circuit voltage (peak-to-peak) for a triboelectric-based H 2 gas sensor using 1% to 0.01% H 2 concentration. 3 (b) shows the compression and emission signal peaks of the triboelectric based generators. Figure 3 (ch) shows the output voltage changes for increasing H 2 concentrations of 100, 500, 1000, 5000, and 10000 ppm.
Figure 4 shows a short-circuit peak-to-peak current of a triboelectric device representing a compression-emission peak for a signal, the two illustrations showing an enlarged view of the forward and reverse connections of the signal.
Figure 5 (a) shows the open circuit peak-to-peak voltage and TEHS response under various gas concentrations. FIG. 5 (b) shows the TEHS indicating the quick response time? Res . Figure 5 (c) shows the relative humidity (30-90%) effect (in air and after H 2 exposure). Figure 5 (d) shows the performance of TEHS in air by charging a 10 μF capacitor that illuminates the LED.
Figure 6 shows a triboelectric-based H 2 sensor operating mode and a band-bending mechanism.
Figure 7 shows a self-manufacturing gas chamber for measuring a triboelectric-based H 2 gas sensor response.
Fig. 8 (a) shows that the output voltage increases with respect to the rotational speed, and Fig. 8 (b) shows that the effect of the force with respect to time indicates a change in the output of the TEHS device.
Figure 9 shows the output voltage (peak-to-peak) and TEHS response behavior at less than 100 ppm H 2 gas concentration (where a value of 0 represents the output voltage in an air environment).
More particularly, the present invention relates to a triboelectric-based hydrogen sensor comprising a ZnO nanorod with a Pd nanoparticle added thereto and a polydimethylsiloxane (PDMS) in the form of a pyramid, ≪ / RTI >
BRIEF SUMMARY OF THE INVENTION The present invention provides a method and system for self-powered contact-electrification-based fast-response and flexible self-powered contact- ) Hydrogen (H 2 ) gas sensor has been developed. The vertically aligned polydimethylsiloxane (PDMS) inverted pyramid contacts and breaks contact with the one-dimensional ZnO nanorod array with Pd nanoparticles added, resulting in the conversion of mechanical energy into electrical energy through triboelectric effects . After exposing our apparatus to dry air and H 2 gas, interesting properties of our apparatus have been observed. In the air environment, the peak-to-peak open-circuit voltage and short-circuit current reached approximately 5.2 V and 80 nA, respectively. The triboelectric-based H 2 sensor output voltage varied with different gas concentrations. The output voltage and response reached approximately 1.1 V and 373%, respectively, at 10,000 ppm H 2 . The average response time was observed to be about 100 seconds. Thus, the results suggest the feasibility of a groundbreaking approach to triboelectric based self-generating systems for gas sensing applications.
Hereinafter, the present invention will be described in more detail with reference to Examples. It is to be understood by those skilled in the art that these examples are for illustrative purposes only and that the scope of the present invention is not construed as being limited by these examples.
< Example >
[ Example One] ZnO Nano-rod Produce
ZnO NRs were grown using the two-step synthesis method described in detail in other publications (see
[ Example 2] PDMS Manufacture of inverted pyramids
Also, for the inverted pyramid patterning using photolithography, 2 × 2 cm was selected for the grown Si wafer 2 thermal oxide as disclosed in the lower left corner of Fig. An etching process was applied to a 20 wt% tetramethylammonium hydroxide (TMAH) solution at 80 캜 using SiO 2 as an etching mask. The depth of the obtained pyramid was about 20 μm. A thin epoxy layer using trimethylchlorosilane was applied to the replicated mold surface using a vacuum desiccator, which promotes stripping of the PDMS film. To prepare the PDMS, the base solution and the curing agent were mixed in a ratio of 10: 1 by weight. Thereafter, a vacuum treatment was performed for 1.5 hours to remove the bubbles. The solution was spin-coated onto a SiO 2 mold and one Al layer was laminated to the backside of the PDMS film and attached to the bonding surface of the PET as a support structure. Finally, the wires were connected using a silver paste, and finally the assembly was heated at 90 占 폚 for 1 hour before peeling off the PDMS film.
The integrated triboelectric generator structure is based on two parts as detailed in Fig. The Pd NPs added on the ZnO NRs structure as the top portion and the bottom portion with the PDMS film in the pyramidal form contribute significantly to triboelectrification. Finally, two spacers were used to separate the upper and lower portions, as described in the lower right of FIG.
[ Example 3] Fabrication and characterization of triboelectric-based hydrogen sensor
The experimental setup for TEHS includes a laboratory manufacturing gas chamber, which is our measurement system for nanogenerator-based gas sensors. As shown in Figure 7, the chambers were completely sealed, including two outlets for gas, vacuum pressure and air passages, respectively, and one outflow. A vacuum pump (ULVAC, DAP-15, 39.9 kPa) and programmable mass flow controller (MFC) were used to balance the chamber's internal atmospheric pressure. To induce friction-contact and separation, a DC servomotor (TS3738N4E11) was inserted through the chamber. In order to generate the maximum collision after contact by the servomotor, the device was firmly fixed with a holder in a central position inside the chamber. The force on the device was calculated using a force sensing resistor. Open circuit voltage and short-circuit current were measured using a functional oscilloscope (Lecroy Wave Runner 610) with a low noise output characterization system (Keithley 4200-SCS, with a plug in the preamplifier, Keithley 4200-PA-1).
A pyramidal PDMS microstructure was observed through a field emission scanning electron microscope (FESEM, JSM-6500F) image at low magnification and high magnification. Ray diffraction (XRD, Rigaku diffractometer, CuK1 radiation) using a transmission electron microscope (TEM), JEOL JEM-2100F) to reveal the presence of NPs using FESEM for thin film characterization. And selected area electron diffraction (SAED) patterns for the measurement of nanostructures through diffraction patterns.
Figure 2 (a) shows a top view of the inverted pyramid structure of PDMS. It is clearly shown in the top view that the pyramid produced is completely free of contaminants and has a pointed tip. The cross-sectional image of Figure 2 (b-I) shows that the hydrothermally fabricated ZnO NRs arrays grown uniformly in nearly vertical alignment and that the average length was about 1 [mu] m. Pd NPs / ZnO NRs array diameters were the same and well dispersed with the uniformity of the typical top views of FIG. 2 (b-II).
The TEM image of a single ZnO NR and the magnified view of the associated SAED pattern show a Pd NPs distribution along the NR (see FIG. 2 (c, d)). A low-power TEM image of a single ZnO NR completely reveals the distribution of Pd NPs along NR. The illustration of FIG. 2 (c) shows Pd NPs of about 10 nm size dispersed on the surface of ZnO NRs after 20 seconds of sputtering. As shown in Fig. 2 (d), the high-resolution TEM (HRTEM) image of ZnO NR follows the c-axis growth direction and exhibits a unique monocrystalline property. The lattice periphery width was 0001> 0110> 1000, and approximately 0.32 nm and 0.16 nm for ZnO and Pd (see Non-Patent Document 29). The direction of hydrothermal growth and the corresponding FFTs satisfy the anisotropic crystal properties.
All identifiable XRD peaks indexed from the Pd NP / ZnO NR structure in the as-fabricated state exhibit a corresponding preferred growth direction (see FIG. 2 (e)). The characteristics of the ZnO-based diffraction peaks originating from the (002), (101), (102) and (103) planes corresponded to 2θ values of 34.7 °, 36.4 °, 47.7 ° and 63.1 °, respectively, The peak was in good agreement with the standard ZnO [JCPDS-01-073-8765], confirming the successful growth of ZnO by the hydrothermal method (see Non-Patent Document 2). For the (002) plane at 34.7 [deg.], Due to the mixed-phase nature of Pd sputtering, the peaks had higher intensities. The initial large peak was generated from the PET substrate region (18 °). Also, the peaks for (112) or (220) at about 60 may represent a hybrid inter-metallic (Pd / ZnO) structure. 2 (f) shows an optical image of the inventive TEHS device. The side view of the device clearly shows that the two spacers facilitate exposing H 2 between the separated top and bottom.
Figure 3 (a) shows the cycle of the triboelectric output voltage due to contact of the upper PDMS portion and the lower Pd NP / ZnO NR array upon exposure to dry air and various concentrations of H 2 at room temperature. Single compression and emission in air produced a signal peak as shown in Figure 3 (b), indicating that the contact force for the TEHS device was sufficient to generate the triboelectric output voltage. Figure 3 (ch) shows an enlarged view of the triboelectric voltage drop in dry air and open circuit mode at various concentrations of H 2 . All output power was measured in a laboratory manufacturing chamber using an applied contact force constantly applied by the torque of a servo motor (250 rpm / min, 1 Hz). In dry air, the peak-to-peak (pk-pk; abbreviated form used in all figures) open circuit voltage was about 5.2 V and short-circuit current reached about 80 nA. Each pulse in FIG. 4 represents a compression mode under forward and reverse (opposite) connections. The compression peak is always higher than the emission signal because of the restoring force of the spacers and the adhesion factor of the PDMS which slows the top-bottom separation, as opposed to the faster contact described in the prior art (see Non-Patent Documents 27 and 30).
Figure 8 (a) shows that the output voltage of the triboelectric nano generator varies continuously at different rotational speeds, as described for 250 to 2,000 rpm. The average peak-to-peak voltage increases from about 5.2 V to 36 V over this range. Due to the elastic behavior of the PDMS, the effective contact area can be widened by minimizing the surface roughness at a larger contact / rotational force (see Non-Patent Document 30). There is a negative output voltage observed after 2,000 rpm due to erroneous voltage drop with higher rotational speed. In addition, in order to adjust the device for the rotational speed, the influence factor observed also at the output belongs to the change of the force disclosed in Fig. 8 (b). As the contact force also varies for different rotational speeds, the output voltage is varied. However, since the output of the TEHS device was measured at a constant rotational force, the present inventors did not further describe it.
After exposing the device to H 2 at 100, 500, 1000, 5000 and 10,000 ppm, the TEHS output voltage (peak-to-peak) was continuously reduced to about 3.9, 3.2, 2.7, 1.7 and 1.1 V. After exposure to air, the TEHS output voltage decreased sharply. Surface resistance changes after H 2 molecule deformation, producing a lower output at higher concentrations. Figure 5 (a) shows the TEHS sensitivity behavior and open circuit voltage with different test gas concentrations under the same rotational speed. The present inventors define sensitivities regarding other piezoelectric nano-generator based gas sensors as follows (see
Where V represents the open circuit output voltage (peak-to-peak) difference between before and after exposure to H 2 , and V g represents the output voltage at a particular gas concentration. As shown in Figure 5 (a), the response obtained for the test gas was 33.4% (for 100 ppm), 74.5% (for 500 ppm), 108% (for 1,000 ppm), 225.88% (Value for 5,000 ppm), and 372.74% (value for 10,000 ppm). The inventors also measured the response behavior for detection of low concentration H 2 molecules for less than 100 ppm (see FIG. 9). The detection limit observed by the present inventors was about 10 ppm or less. 5 (b) shows that a response time (t res ) of about 100 seconds is obtained when the same applied torque and 5,000 ppm H 2 are used. Sensitivity to TEHS, detection range, response time, and distinct characteristics of the output voltage indicate a clear improvement over previous room temperature flexible and portable gas measurement devices (see
[Table 1]
S (Sensitivity) - Sensitivity; MDL (Maximum detection level) - Maximum detection level; RT (Response time) - Response time; LOD (Limit of detection) - detection limit; Power dependencies (PD) - power dependencies; EPS (External power source) - External power source; RFID (Radio frequency identification tag) - Radio wave identification tag; Subscript m = S (%) = [(R g -R a ) / R a ] x 100; Subscript n = S (%) = [(R g -R a ) / R g ] × 100.
The present inventors have also considered and investigated the effect of water vapor on the structure of the present invention, since the surface of the triboelectric generator is highly affected by humidity (see Non-Patent Document 31). Therefore, the inventors evaluated the response of the device under 30 to 90% RH using test gas concentrations of 1,000 and 5,000 ppm. As shown in Fig. 5 (c), the output voltage decreases as the humidity increases. The Pd NP / ZnO NR structure exhibits poor selective chemisorption for H 2 exposure, thus exhibiting a detrimental humidity effect.
The operation ability of the device as a generator was studied. The circuit of Figure 5 (d) shows the rectification of the device output and the storage of charge on the capacitor, which may be changed later to supply power to the light emitting diode (LED). The capacitor was first charged from the nanodevice. After 1,200 cycles, the switch was pressed to stop charging the capacitor and reveal the LED (≈ 1/2 second). The active power generation capability can be improved by reducing the capacitor charging period. The present inventors connected the two devices in series and observed that the charge time was reduced. On the other hand, for a significant amount of H 2 exposure, a long time is required to charge the capacitor.
The operating mechanism for the TEHS device was investigated through the combination of triboelectric effects and electrostatic induction (see non-patent reference 18). Generally, in some intermediate positions between compression and complete discharge, in a switched manner, a voltage drop occurs in the triboelectric device (see Non-Patent Document 27). In the initial state, there is no electrical voltage drop since the charge transfer has not yet occurred (see Fig. 6 (a-I)). When an external impact is applied to the top of the substrate, the ZnO surface is immediately contacted with the inverse pyramid PDMS film, and then electrons are transported from the most positive surface to the most negative surface due to the triboelectric coefficient (see FIG. 6 (a-II) ). After restoration from the compressed position, it is assumed that the contact between the distant surfaces is due to the lower Al electrode having lower mobility than the upper Au electrode. As a result, electrons move from the lower electrode to the upper electrode until reaching electrostatic equilibrium. Thereafter, as shown in Fig. 6 (a-III), the distance away reaches a maximum. As shown in Figures 6 (a-IV), after the fully discharged position, the two portions come back inward to come in contact with each other, causing a voltage drop in the opposite direction. Therefore, the open circuit voltage drops until the distant part reaches the fully restored position.
If the corrugated surface of the PDMS contacts a plurality of ZnO NRs, then the upper and lower interface layers sense attraction. A 1D ZnO array structure has been previously studied using a strain tensor through finite element analysis (see non-patent reference 26). The concept is questionable, as material behavior at any free point can be affected by deformation at neighboring points, if the ZnO structure scale is significant. The assumption for this structure is as follows: when the pyramid acts on NR, NR senses the compressive stress, bends, and slightly penetrates into the neighboring NRs at intervals between the NRs, As well as small interdigitated overlaps at independent ends. Previous work has disclosed a partial bending effect by adjacent NWs that causes an output voltage variation that varies in proportion to charge leakage and structure density (see Non-Patent Document 32).
At room temperature, oxygen reacts on the surface of ZnO, causing the formation of molecular ions (O 2 - ) (see the following formula (2)) (see
The ionosorption process accelerates the depletion layer on the surface of ZnO and causes high resistance. When Pd NPs / ZnO NRs contacts the target gas (H 2 ), the oxygen species reacts with the molecules of the target gas and emits electrons (see equation (3)). These free electrons strongly block the triboelectric field. The H 2 chemisorption changes the surface roughness and resistance characteristics and also completely restricts electron movement in the external circuit. The presence of H 2 gas alters the depletion layer level to a certain extent that the free electrons passing through the nano-junction increase the energy barrier to the ground state (see FIG. 6 (b-III)). Some studies have analyzed the case where ions migrate through the nano-junction by tunneling (see Non-Patent Documents 34 and 34). Recent studies by the present inventors have shown that the diffusion of H 2 molecules through the path represented by the carrier concentration has a significant effect on the Pd-ZnO interface under H 2 exposure (see Non-Patent Document 28). An increased amount of charge due to friction on the oxide surface can increase the number of adsorbed ions, resulting in an effective roughness which can be a major cause of reducing the effective contact area (see Non-Patent Document 36). Once the H 2 gas is adsorbed by the rough surface, the average viscosity of the interface of the gas substrate (Pd / ZnO) decreases slowly and the surface roughness improves, and the charge transfer changes due to friction as the H 2 concentration changes. By applying rotational force to the device, the polarized charge attracts free electrons and reduces the level of depletion (see non-patent reference 37). The triboelectric effect controls the charge carrier transport through the Pd-ZnO and ZnO-ZnO interfaces and regulates the interfacial energy in the junction region. Thus, the gas molecules are not only ionized by a suitable and strong electric field; And the interface barrier height condition depends on the different ionization carrier penetration into the surface under repeated contact (see Figure 6 (b-IV)). This periodic effect lasts until the energy is reduced towards the next contact.
The present invention has been described with reference to the preferred embodiments. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. Therefore, the disclosed embodiments should be considered in an illustrative rather than a restrictive sense. The scope of the present invention is defined by the appended claims rather than by the foregoing description, and all differences within the scope of equivalents thereof should be construed as being included in the present invention.
Claims (11)
By placing a spacer between the upper portion including the ZnO nanorod, the anode and the substrate to which the Pd nanoparticles are added, the polydimethylsiloxane in the form of a pyramid, the cathode and the lower portion including the substrate, And a triboelectric based hydrogen sensor.
The hydrogen sensor detects hydrogen by triboelectricity by contact and separation between a ZnO nanorod with Pd nanoparticles added and a polydimethylsiloxane in the form of a pyramid.
Wherein the Pd nanoparticles are added to ZnO nanorods by sputtering on ZnO nanorods.
Wherein the pyramid is 10 [mu] m to 100 [mu] m in edge length of the shape.
Wherein the length of the ZnO nano-rods is 0.1 占 퐉 to 10 占 퐉.
Wherein the Pd nanoparticles have a size of 1 nm to 50 nm.
Wherein the hydrogen sensor has a hydrogen gas detection range of 10 ppm to 10,000 ppm at room temperature.
Wherein the hydrogen sensor records an output voltage according to hydrogen detection.
Wherein the anode is Au or Al,
Wherein the cathode is Al or Au,
Wherein the substrate is PET or PI.
(a) fabricating a top comprising a ZnO nanorod, an anode and a substrate to which Pd nanoparticles have been added;
(b) fabricating a bottom comprising a polydimethylsiloxane, a cathode, and a substrate in the form of a pyramid; And
(c) positioning the two spacers between the top and bottom with the top and bottom facing each other.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150163880A KR101742173B1 (en) | 2015-11-23 | 2015-11-23 | A triboelectric based hydrogen sensor and a method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150163880A KR101742173B1 (en) | 2015-11-23 | 2015-11-23 | A triboelectric based hydrogen sensor and a method for manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20170059662A KR20170059662A (en) | 2017-05-31 |
| KR101742173B1 true KR101742173B1 (en) | 2017-06-01 |
Family
ID=59052483
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020150163880A KR101742173B1 (en) | 2015-11-23 | 2015-11-23 | A triboelectric based hydrogen sensor and a method for manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101742173B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200134559A (en) | 2019-05-22 | 2020-12-02 | 호남대학교 산학협력단 | fiber-optic hydrogen sensor and hydrogen concentration measuring apparatus employing the same |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102093312B1 (en) * | 2018-03-13 | 2020-03-25 | 한국생산기술연구원 | Apparatus for sensing with triboelectrification |
| CN109239296A (en) * | 2018-10-17 | 2019-01-18 | 大连海事大学 | A kind of self energizing water quality on-line monitoring device and method |
| CN110045001B (en) * | 2019-05-21 | 2020-10-27 | 电子科技大学 | Ultraviolet integrated gas sensor based on friction nano generator and preparation method |
| CN112649477B (en) * | 2019-10-12 | 2021-09-07 | 中国科学院大连化学物理研究所 | With rGO/In2O3Self-generating gas sensor as electrode material |
-
2015
- 2015-11-23 KR KR1020150163880A patent/KR101742173B1/en active IP Right Grant
Non-Patent Citations (1)
| Title |
|---|
| 논문(2014.04) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200134559A (en) | 2019-05-22 | 2020-12-02 | 호남대학교 산학협력단 | fiber-optic hydrogen sensor and hydrogen concentration measuring apparatus employing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170059662A (en) | 2017-05-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101742173B1 (en) | A triboelectric based hydrogen sensor and a method for manufacturing the same | |
| Uddin et al. | A self-powered active hydrogen gas sensor with fast response at room temperature based on triboelectric effect | |
| Kim et al. | Low-voltage-driven sensors based on ZnO nanowires for room-temperature detection of NO2 and CO gases | |
| Rashid et al. | A flexible hydrogen sensor based on Pd nanoparticles decorated ZnO nanorods grown on polyimide tape | |
| Zhu et al. | One-step hydrothermal fabrication of nanosheet-assembled NiO/ZnO microflower and its ethanol sensing property | |
| Yang et al. | Gas sensor by direct growth and functionalization of metal oxide/metal sulfide core–shell nanowires on flexible substrates | |
| Joshi et al. | A review on chemiresistive room temperature gas sensors based on metal oxide nanostructures, graphene and 2D transition metal dichalcogenides | |
| Wu et al. | Three-dimensional graphene hydrogel decorated with SnO2 for high-performance NO2 sensing with enhanced immunity to humidity | |
| Li et al. | Design of core–shell heterostructure nanofibers with different work function and their sensing properties to trimethylamine | |
| Kaps et al. | Piezoresistive response of quasi-one-dimensional ZnO nanowires using an in situ electromechanical device | |
| Ju et al. | Direct hydrothermal growth of ZnO nanosheets on electrode for ethanol sensing | |
| Steinhauer et al. | Local CuO nanowire growth on microhotplates: In situ electrical measurements and gas sensing application | |
| Liu et al. | AuPt bimetal-functionalized SnSe2 microflower-based sensors for detecting sub-ppm NO2 at low temperatures | |
| He et al. | Self-powered smelling electronic-skin based on the piezo-gas-sensor matrix for real-time monitoring the mining environment | |
| Jaisutti et al. | Low-temperature photochemically activated amorphous indium-gallium-zinc oxide for highly stable room-temperature gas sensors | |
| Hu et al. | Piezotronic effect enhanced Schottky-contact ZnO micro/nanowire humidity sensors | |
| Zhu et al. | Piezo/active humidity sensing of CeO2/ZnO and SnO2/ZnO nanoarray nanogenerators with high response and large detecting range | |
| Wang et al. | CuO nanowire-based humidity sensor | |
| KR20160149402A (en) | Self-Powered Sensor Using Triboelectrification | |
| Poloju et al. | Development of CdO/ZnO nanocomposites for the rapid detection and discrimination of n-butanol | |
| CN103364444B (en) | The method that detection of gas is carried out using the nano generator based on nanometer piezoelectric semiconductor material | |
| Panth et al. | High-performance strain sensors based on vertically aligned piezoelectric zinc oxide nanowire array/graphene nanohybrids | |
| CN104316086A (en) | Airflow sensor based on graphene nanowall and manufacturing method | |
| Wu et al. | A practical vacuum sensor based on a ZnO nanowire array | |
| Wongchoosuk et al. | Electronic nose for toxic gas detection based on photostimulated core–shell nanowires |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant |