CN102285168A - Buried capacitance material and manufacturing method thereof - Google Patents

Buried capacitance material and manufacturing method thereof Download PDF

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CN102285168A
CN102285168A CN2011101172798A CN201110117279A CN102285168A CN 102285168 A CN102285168 A CN 102285168A CN 2011101172798 A CN2011101172798 A CN 2011101172798A CN 201110117279 A CN201110117279 A CN 201110117279A CN 102285168 A CN102285168 A CN 102285168A
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mushy
resin
metal forming
organic film
film
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苏民社
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Shengyi Technology Co Ltd
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Shengyi Technology Co Ltd
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Abstract

The invention provides a buried capacitance material and a manufacturing method thereof. The buried capacitance material comprises a prepreg, and metal foil or glued metal foil respectively pressed at both sides of the prepreg, wherein the prepreg comprises a porous organic film and a resin composition attached to the organic film after being soaked and dried, the glued metal foil comprises metal foil and a resin composition coated on the metal foil. For the buried capacitance material disclosed by the invention, the porous organic film is used as a support material so as to facilitate the entering of resin or filler, and the buried capacitance material is integrated. Serial effects do not exist in the buried capacitance material, so the capacitance is increased; and in addition, the porous organic film is used as the support material and is matched with thermoset resin to manufacture the buried capacitance material, so the mouldability is good, the moulding temperature is low, the technological operation is simple, the obtained buried capacitance material has good strength and shock resistance so as to avoid fragmentation in an etching or drilling process, and the method is conductive to the thinning of the buried capacitance material.

Description

Bury capacity materials and preparation method thereof
Technical field
The present invention relates to bury the capacity materials technical field, relate in particular to and a kind ofly bury capacity materials and preparation method thereof as backing material with mushy organic film.
Background technology
Along with electronic device develops towards multifunction, microminiaturized direction, the shared proportion of the passive device in the electronic system is increasing.For example the quantity of passive device is 20 times of active device in mobile phone.At present passive device mainly adopts surface-pasted mode (as discrete capacitor element), and in occupation of the big quantity space of substrate, and interconnection length and pad are many on the face, make the electrical property of material and system and unfailing performance greatly reduce.For provide more light and handy, performance better, the stronger electronic system of reliability of low price, performance, it is unique selection that past surface attaching type package system is converted to the flush type package system.In all passive devices, the quantity of capacitor is maximum, is subjected to paying close attention to more especially.
For the space of saving circuit board surface and reduce electromagnetic interference, (is up and down two blocks of metal electrodes with discrete capacitor element with the material forms of capacity plate antenna, middle be the slab construction of dielectric) in (lamination advances) multilayer circuit board (PCB) of nuzzling, be the trend of dealing with problems.
The buried capacitors that pre-acquisition has higher using value, its dielectric material need have between higher proof voltage intensity, medium and the metallic substrates higher peel strength is arranged, and has good heat-resistant and processing characteristics.To these requirements of buried capacitor material, at first should belong to requirement to resin matrix in the dielectric material.As everyone knows, need have thin thickness of dielectric layers and higher dielectric constant as buried capacitors, in order to obtain high dielectric constant, usually in dielectric layer, add a large amount of normal ceramic packings of high dielectric, the adding of a large amount of ceramic packings has certain negative effect to the performance of dielectric layer, for example peel strength reduces and causes the reliability of material variation, the material frangible poor processability etc. that makes that becomes fragile, under the situation that the dielectric layer of buried capacitor material is done very thinly, these adverse influences can be more outstanding.
Chinese patent CN200610007389.8 discloses a kind of resin combination that is used for buried capacitors, and a kind of flush type ceramic/polymer that is used to comprise this resin combination is buried capacity materials, a kind ofly buried the dielectric layer and the printed circuit board of the capacitor that capacity materials makes by this.Disclosed this resin combination mainly focuses on and solves adhesion strength, hear resistance and anti-flammability in this patent, do not solve the fragility problem of burying capacity materials of using this resin combination and ceramic material to form, this resin combination is because the fragility of itself is very big, after compound with a large amount of ceramic packings, fragility is bigger, be difficult to circuit etching machine by the printed circuit board (pcb) process, in the process of PCB, broken phenomenon can occur, can not reach as the processing request that buries capacity materials.
Be the fragility problem that capacity materials is buried in solution, adopting one of more method at present is the method that adopt to add backing material, as being to adopt glass fabric as backing material mostly.United States Patent (USP) has disclosed a kind of making and assembling flow path that includes the printed circuit board of high capacitance Energy distribution stratum nucleare for No. 5162977, and its high dielectric constant material is to be added by epoxy resin to lure the formed glue dipping of electrical ceramic powders glass cloth to be formed by force.But that uses at present that the thinnest glass cloth makes buries capacity materials thickness and all will can't satisfy and bury the more needs of minimal thickness of capacity materials more than 30 microns.
U. S. application patent US20060188701 has disclosed a kind of middle heat-pesistant thin film that adds and has been used as backing material, though solved intensity (promptly the having solved fragility) problem of burying capacity materials, but because used film as intermediate course, make that burying capacity materials becomes two-part cascaded structure, according to the computing formula 1/C=1/C of series capacitance 1+ 1/C 2, final make bury capacity materials, its capacitance C has obtained reduction.
U.S. Pat 4996097 has been made a kind of minimum thickness by expand stretching be that 2.5 microns the pottery PTFE film of filling is as capacitance material, proposed to make a kind of mushy PTFE film earlier by drawing process, eliminate space wherein by high pressure (1000psi) compression then, be made into the capacitance material that does not have hole.It does not propose with this mushy high dielectric PTFE film to adopt the method for dipping to flood other resin system as backing material, reaching the purpose of elimination hole, and then the making of burying capacity materials.And the capacitance material of making of this patented method, need be at the high-temperature molding more than 350 ℃.
At above problem, be necessary to develop and have sufficient intensity, again capacitivity is reduced few capacity materials that buries.
Summary of the invention
The object of the present invention is to provide a kind of capacity materials that buries, adopt mushy organic film, be beneficial to the slimming of burying capacity materials, have good pliability, high-capacitance as its backing material.
Another object of the present invention is to provide a kind of above-mentioned preparation method of burying capacity materials, adopting mushy organic film is backing material, has good mouldability, technological operation is easy, make bury capacity materials intensity and shock resistance good, avoided in etching or boring process, cracked phenomenon occurring
For achieving the above object, the invention provides a kind of capacity materials that buries, comprise: prepreg, and be overlaid on the metal forming or the gluing metal forming of its both sides respectively, prepreg comprises mushy organic film and by adhering to the resin combination on it after the impregnation drying, and the gluing metal forming comprises metal forming and is coated with thereon resin combination.
Described mushy organic film is made by polyester, polyamine, polyacrylic acid, polyimides, aramid fiber, polytetrafluoroethylene (PTFE) or syndiotactic polytyrene; This mushy organic film is mushy expanded ptfe (ePTFE) film, mushy polyethylene film, mushy polypropylene film or mushy Kapton; Described mushy organic film thickness is 2~50 μ m, and the aperture of its mesopore is 1~500 μ m, and porosity is 30~98%; Described metal forming is the alloy or the composite metallic material of copper, brass, aluminium, nickel or these metals, and its thickness is 12~150 μ m.
The resin Composition of described resin combination be epoxy resin, cyanate ester resin, polyphenylene oxide resin, polybutadiene, butadiene styrene resin, BT resin, polyflon (PTFE resin), polyimide resin, phenolic resins, and acrylate in one or more; This resin combination does not comprise or comprises ceramic packing, and ceramic packing is selected from one or more in titanium dioxide, silica, aluminium oxide, boron nitride, aluminium nitride, barium titanate, strontium titanates, barium strontium titanate, calcium barium titanate, the plumbous pottery of zirconia titanate, lead titanates-niobic acid magnesium lead, carbon black, CNT, tri-iron tetroxide, metal and the metal oxide powder.
The invention provides another kind and bury capacity materials, comprising: mushy organic film and be overlaid on the gluing metal forming of its both sides, described gluing metal forming comprise metal forming and are coated with thereon resin combination.
Described mushy organic film is made by polyester, polyamine, polyacrylic acid, polyimides, aramid fiber, polytetrafluoroethylene (PTFE) or syndiotactic polytyrene, and this mushy organic film is mushy expanded ptfe (ePTFE) film, mushy polyethylene film, mushy polypropylene film or mushy Kapton; Described mushy organic film thickness is 2~50 μ m, and the aperture of its mesopore is 1~500 μ m, and porosity is 30~98%; Described metal forming is the alloy or the composite metallic material of copper, brass, aluminium, nickel or these metals, and its thickness is 12~150 μ m.
The resin Composition of described resin combination be epoxy resin, cyanate ester resin, polyphenylene oxide resin, polybutadiene, butadiene styrene resin, BT resin, polyflon (PTFE resin), polyimide resin, phenolic resins, and acrylate in one or more; This resin combination does not comprise or comprises ceramic packing, and ceramic packing is selected from one or more in titanium dioxide, silica, aluminium oxide, boron nitride, aluminium nitride, barium titanate, strontium titanates, barium strontium titanate, calcium barium titanate, the plumbous pottery of zirconia titanate, lead titanates-niobic acid magnesium lead, carbon black, CNT, tri-iron tetroxide, metal and the metal oxide powder.
The invention provides a kind of above-mentioned preparation method of burying capacity materials, may further comprise the steps:
Step 1, provide mushy organic film, and metal forming or gluing metal forming, and the glue of preparation resin combination;
Step 2, flood mushy organic film with the glue of the resin combination of above-mentioned preparation, the baking semi-solid preparation makes prepreg;
Step 3, respectively be laminated with a metal forming or gluing metal forming, put into then in the laminating machine, promptly make and bury capacity materials by hot-press solidifying in the both sides of prepreg.
Described mushy organic film is made by polyester, polyamine, polyacrylic acid, polyimides, aramid fiber, polytetrafluoroethylene (PTFE) or syndiotactic polytyrene, and this mushy organic film is mushy expanded ptfe film, mushy polyethylene film, mushy polypropylene film or mushy Kapton; Described mushy organic film thickness is 2~50 μ m, and the aperture of its mesopore is 1~500 μ m, and porosity is 30~98%; Described metal forming is the alloy or the composite metallic material of copper, brass, aluminium, nickel or these metals, and its thickness is 12~150 μ m; Described gluing metal forming makes through the baking semi-solid preparation by the glue of coating resin combination on metal forming, and the resin combination of this resin combination and described prepreg is identical or different.
The invention provides another kind of above-mentioned preparation method of burying capacity materials, may further comprise the steps:
Step 1, provide metal forming and mushy organic film, and the glue of preparation resin combination;
Step 2, apply on metal forming or the glue of casting resin composition, the baking semi-solid preparation makes the gluing metal forming;
Step 3, respectively be laminated with a gluing metal forming, put into then in the laminating machine, promptly make and bury capacity materials by hot-press solidifying in mushy organic film both sides.
Described mushy organic film is made by polyester, polyamine, polyacrylic acid, polyimides, aramid fiber, polytetrafluoroethylene (PTFE) or syndiotactic polytyrene, and this mushy organic film is mushy expanded ptfe film, mushy polyethylene film, mushy polypropylene film or mushy Kapton; Described mushy organic film thickness is 2~50 μ m, and the aperture of its mesopore is 1~500 μ m, and porosity is 30~98%; Described metal forming is the alloy or the composite metallic material of copper, brass, aluminium, nickel or these metals, and its thickness is 12~150 μ m.
Beneficial effect of the present invention: the capacity materials that buries of the present invention, adopt mushy organic film as backing material, can make things convenient for resin or reach entering of filler, make that burying capacity materials becomes as a whole, inner do not have the effect of series connection, thereby make capacitance be improved; In addition, with mushy organic film as backing material, cooperate making to bury capacity materials with heat cured resin, has good mouldability, forming temperature is low, and technological operation is easy, and prepared intensity and shock resistance of burying capacity materials is good, avoided in etching or boring process, occurring splitting broken phenomenon, and be beneficial to the slimming of burying capacity materials.
The specific embodiment
One embodiment of the invention bury capacity materials, comprise: prepreg and be overlaid on the gluing metal forming or the metal forming of its both sides, prepreg comprises mushy organic film and by adhering to the resin combination on it after the impregnation drying, and the gluing metal forming comprises metal forming and is coated with thereon resin combination.Wherein mushy organic film is as backing material, and it has good pliability, and the pliability of burying capacity materials can be provided, high-capacitance, superior strength and shock resistance, and this bury capacity materials thickness can be less than 25 microns, slimming more.
Described mushy organic film can be by the film of polyester, polyamine, polyacrylic acid, polyimides, aramid fiber, polytetrafluoroethylene (PTFE) or syndiotactic polytyrene making, but being not limited to the material that these are enumerated, can be to be made by methods such as foaming, the stretchings of expanding.This mushy organic film can be mushy expanded ptfe (ePTFE) film, mushy polyethylene film, mushy polypropylene film or mushy Kapton, and preferred mushy organic film is the mushy polytetrafluoroethylene film by expanding and stretching and make.A large amount of not airtight holes is arranged in this mushy organic film, the size of hole enters to good can make things convenient for resin and filler, preferred thickness is 2~50 μ m, the aperture of its mesopore is that 1 μ m~500 μ m, porosity are mushy organic film of 50%~98%, further preferred thickness is 2~15 μ m, and the aperture is that 1 μ m~10 μ m, porosity are this mushy organic film of 70%~98%.
The resin combination of described gluing metal forming and the resin combination of prepreg are identical or different, the resin Composition that described resin combination comprises is specifiable in epoxy resin, cyanate ester resin, polyphenylene oxide resin, polybutadiene, butadiene styrene resin, BT resin, PTFE resin (polyflon), polyimide resin, phenolic resins, the acrylate one or more, but is not limited to these.
According to the present invention, described resin combination can not include ceramic packing, also can include ceramic packing, this ceramic packing is selected from one or more in titanium dioxide, silica, aluminium oxide, boron nitride, aluminium nitride, barium titanate, strontium titanates, barium strontium titanate, calcium barium titanate, the plumbous pottery of zirconia titanate, lead titanates-niobic acid magnesium lead, carbon black, CNT, tri-iron tetroxide, metal and the metal oxide powder, but is not limited to these.
According to the present invention, described metal forming is as electrode material, and specifiable metal forming comprises the alloy or the composite metallic material of copper, brass, aluminium, nickel, zinc or these metals, and the thickness of metal forming is 12~150 μ m.
The preparation method of burying capacity materials of an above-mentioned embodiment may further comprise the steps:
Step 1, provide mushy organic film, and metal forming or gluing metal forming, and the glue of preparation resin combination; Ceramic packing can be included in the described resin combination, also ceramic packing can be do not comprised.When adopting the gluing metal forming, this gluing metal forming can be made in advance, by the glue of coating resin combination on metal forming, makes through the baking semi-solid preparation.
Step 2, flood mushy organic film with the glue of the resin combination of above-mentioned preparation, the baking semi-solid preparation makes prepreg.
Step 3, respectively be laminated with a metal forming or gluing metal forming, put into then in the laminating machine, promptly make and bury capacity materials by hot-press solidifying in the both sides of prepreg.The capacity materials thickness that buries that this makes can be less than 25 microns.
Another embodiment of the present invention bury capacity materials, comprising: mushy organic film and be overlaid on the gluing metal forming of its both sides, described gluing metal forming comprise metal forming and are coated with thereon resin combination.Wherein mushy organic film is as backing material, and it has good pliability, and the pliability of burying capacity materials can be provided, high-capacitance, and superior strength and shock resistance, and this buries capacity materials slimming more (thickness can less than 25 microns).
Described mushy organic film can be by the film of polyester, polyamine, polyacrylic acid, polyimides, aramid fiber, polytetrafluoroethylene (PTFE) or syndiotactic polytyrene making, but being not limited to the material that these are enumerated, can be to be made by methods such as foaming, the stretchings of expanding.This mushy organic film can be mushy expanded ptfe film, mushy polyethylene film, mushy polypropylene film or mushy Kapton, and preferred mushy organic film is the mushy polytetrafluoroethylene film by expanding and stretching and make.A large amount of not airtight holes is arranged in this mushy organic film, the size of hole enters to good can make things convenient for resin and filler, preferred thickness is 2~50 μ m, the aperture of its mesopore is that 1 μ m~500 μ m, porosity are mushy organic film of 50%~98%, further preferred thickness is 2~15 μ m, and the aperture is that 1 μ m~10 μ m, porosity are this mushy organic film of 70%~98%.
The resin Composition that described resin combination comprises is specifiable in epoxy resin, cyanate ester resin, polyphenylene oxide resin, polybutadiene, butadiene styrene resin, BT resin, PTFE resin (polyflon), polyimide resin, phenolic resins, the acrylate one or more, but is not limited to these.According to the present invention, described resin combination can not include ceramic packing, also can include ceramic packing, this ceramic packing is selected from one or more in titanium dioxide, silica, aluminium oxide, boron nitride, aluminium nitride, barium titanate, strontium titanates, barium strontium titanate, calcium barium titanate, the plumbous pottery of zirconia titanate, lead titanates-niobic acid magnesium lead, carbon black, CNT, tri-iron tetroxide, metal and the metal oxide powder, but is not limited to these.According to the present invention, described metal forming is as electrode material, and specifiable metal forming comprises the alloy or the composite metallic material of copper, brass, aluminium, nickel, zinc or these metals, and the thickness of metal forming is 12~150 μ m.
The preparation method of burying capacity materials of above-mentioned another embodiment may further comprise the steps:
Step 1, provide metal forming and mushy organic film, and the glue of preparation resin combination.
Step 2, apply on metal forming or the glue of casting resin composition, the baking semi-solid preparation makes the gluing metal forming.
Step 3, respectively be laminated with a gluing metal forming, put into then in the laminating machine, promptly make and bury capacity materials by hot-press solidifying in mushy organic film both sides.The capacity materials thickness that buries that this makes can be less than 25 microns.
Now the embodiment of the invention is described in detail as follows, but the present invention is confined to scope of embodiments.
Embodiment 1:
With bisphenol A epoxide resin (epoxy resin A), brominated epoxy resin (epoxy resin B) and nbr carboxyl terminal (C), be dissolved in the EGME, and interpolation at room temperature mixes obtaining glue then with respect to the orthoresol linear phenol-aldehyde resin and the 2-MI (glyoxal ethyline) of epoxy resin 0.9 mol ratio.The gained glue is coated on the Copper Foil, and baking was cured as the B stage in 5 minutes in 155 ℃ baking oven then, and to obtain adhesive coated foil (RCC), the bondline thickness of RCC is 8 microns.Then, the ePTFE film of 3 micron thickness is placed between two RCC, in press, in 190 ℃ of laminations and solidify, obtains measuring stretch modulus behind the solidfied material, percentage elongation, Tg, peel strength and etch away Copper Foil after thickness of dielectric layers.Concrete proportioning and performance see Table 1.
Embodiment 2:
Bisphenol A epoxide resin (epoxy resin A), brominated epoxy resin (epoxy resin B) are dissolved in the EGME, and interpolation at room temperature mixes obtaining glue then with respect to the orthoresol linear phenol-aldehyde resin and the 2-MI (glyoxal ethyline) of epoxy 0.9 mol ratio.Flood the ePTFE film of 3 micron thickness with the gained glue, baking was cured as the B stage in 5 minutes in 155 ℃ baking oven then, obtained prepreg, and the control resin content is 60%.Then, this prepreg is placed between two Copper Foils, in press, in 190 ℃ of laminations and solidify, obtains measuring stretch modulus behind the solidfied material, percentage elongation, Tg, peel strength and etch away Copper Foil after thickness of dielectric layers.Concrete proportioning and performance see Table 1.
Comparative example 1:
With bisphenol A epoxide resin (epoxy resin A), brominated epoxy resin (epoxy resin B) and nbr carboxyl terminal (resin C), be dissolved in the EGME, and add the orthoresol linear phenol-aldehyde resin and the 2-MI (glyoxal ethyline) of 0.9 mol ratio, at room temperature mix obtaining glue then.Flood 106 type E type glass cloth in order to last glue, baking was cured as the B stage in 5 minutes in 155 ℃ baking oven then, obtained prepreg, and the control resin content is 72%.Then, this prepreg is placed between two Copper Foils, in press, in 190 ℃ of laminations and solidify, obtains measuring stretch modulus behind the solidfied material, percentage elongation, Tg, peel strength and etch away Copper Foil after thickness of dielectric layers.Concrete proportioning and performance see Table 1.
Comparative example 2:
With bisphenol A epoxide resin (epoxy resin A), brominated epoxy resin (epoxy resin B), be dissolved in the EGME, and add the orthoresol linear phenol-aldehyde resin and the 2-MI (glyoxal ethyline) of 0.9 mol ratio, at room temperature mix obtaining glue then.Flood 104 type E type glass cloth in order to last glue, baking was cured as the B stage in 5 minutes in 155 ℃ baking oven then, obtained prepreg, and the control resin content is 80%.Then, this prepreg is placed between two Copper Foils, in press, in 190 ℃ of laminations and solidify, obtains measuring stretch modulus behind the solidfied material, percentage elongation, Tg, peel strength and etch away Copper Foil after thickness of dielectric layers.Concrete proportioning and performance see Table 1.
Table 1
Figure BDA0000059731740000081
Figure BDA0000059731740000091
Embodiment 3:
Proportioning by embodiment 1 is dissolved in bisphenol A epoxide resin (epoxy resin A), brominated epoxy resin (epoxy resin B), nbr carboxyl terminal mixture in the EGME, as for reaction solution, also added orthoresol linear phenolic resin and 2-MI, at room temperature mixed the glue of gained then as 0.9 mol ratio of curing agent.Add the barium titanate of the additive of 40vol% then, mix, subsequently the gained glue is cast on the Copper Foil, 4 minutes semi-solid preparations of baking are made into RCC for the B stage in 155 ℃ of baking ovens.Then, the ePTFE film of 5 micron thickness is placed between two RCC, in press in 190 ℃ of laminations and solidify.Obtain measuring stretch modulus, percentage elongation, Tg, peel strength, Dk/Df and anti-flammability behind the solidfied material, the results are shown in Table 2.
Comparative example 3:
Proportioning by embodiment 1 is dissolved in bisphenol A epoxide resin (epoxy resin A), brominated epoxy resin (epoxy resin B), nbr carboxyl terminal mixture in the EGME, as for reaction solution, also added orthoresol linear phenolic resin and 2-MI, at room temperature mixed the glue of gained then as 0.9 mol ratio of curing agent.Add the barium titanate of the additive of 40vol% then, mix, subsequently the gained glue is cast on the Copper Foil, 4 minutes semi-solid preparations of baking are made into RCC for the B stage in 155 ℃ of baking ovens.Then, the PI film of 5 micron thickness is placed between two RCC, in press in 190 ℃ of laminations and solidify.Obtain measuring stretch modulus, percentage elongation, Tg, peel strength, Dk/Df and anti-flammability behind the solidfied material, the results are shown in Table 2.
Table 2
Figure BDA0000059731740000092
Above embodiment and comparative example all detect copper-clad plate with reference to the IPC4101 standard, and detection method is as follows:
(1), glass transition temperature (Tg): dynamic thermomechanical analysis (DMA).
(2), peel strength (PS): test condition is a normality.
(3), flammability: adopt the UL-94 testing standard.
(4), stretch modulus and percentage elongation: adopt the Zwick material stretch test machine, the testing of materials state is the A attitude.
(5), dielectric properties: SPDR (splite post dielectric resonator) method tests, test condition is the A attitude, 1.1GHz.
Can find out that from last table 1 data result the embodiment of the invention 1,2 is compared with comparative example 1,2, adopt the ePTFE film, can make and bury thinner that capacity materials does, and have good intensity and toughness as backing material; Though adopted present 104 commercially available types to approach glass cloth in the comparative example 2, finally buried thinner that the thickness of capacity materials still can not do.
Can find out that from last table 2 data result the embodiment of the invention 3 is compared with comparative example 3, the ePTFE of hole film be arranged because embodiment 3 has adopted, its dielectric constant with respect to the dielectric constant height of the PI film that does not have hole a lot, can obtain higher capacitance.
As can be seen, use this mushy organic film and heat cured resin to cooperate making to bury capacity materials from embodiment, forming temperature is low.
In sum, the capacity materials that buries of the present invention adopts mushy organic film as backing material, can make things convenient for resin or reach entering of filler, makes that burying capacity materials becomes as a whole, and inner do not have the effect of series connection, thereby make capacitance be improved; In addition, with mushy organic film as backing material, cooperate making to bury capacity materials with heat cured resin, has good mouldability, forming temperature is low, and technological operation is easy, and prepared intensity and shock resistance of burying capacity materials is good, avoided in etching or boring process, occurring splitting broken phenomenon, and be beneficial to the slimming of burying capacity materials.
Above embodiment, be not that composition of the present invention is imposed any restrictions, every foundation technical spirit of the present invention or composition composition or content all still belong in the scope of technical solution of the present invention any trickle modification, equivalent variations and modification that above embodiment did.

Claims (10)

1. one kind is buried capacity materials, it is characterized in that, comprise: prepreg, be overlaid on the metal forming or the gluing metal forming of its both sides respectively, prepreg comprises mushy organic film and by adhering to the resin combination on it after the impregnation drying, and the gluing metal forming comprises metal forming and is coated with thereon resin combination.
2. the capacity materials that buries as claimed in claim 1 is characterized in that described mushy organic film is made by polyester, polyamine, polyacrylic acid, polyimides, aramid fiber, polytetrafluoroethylene (PTFE) or syndiotactic polytyrene; This mushy organic film is mushy expanded ptfe film, mushy polyethylene film, mushy polypropylene film or mushy Kapton; This mushy organic film thickness is 2~50 μ m, and the aperture of its mesopore is 1~500 μ m, and porosity is 30~98%; Metal forming is the alloy or the composite metallic material of copper, brass, aluminium, nickel or these metals, and its thickness is 12~150 μ m.
3. the capacity materials that buries as claimed in claim 1, it is characterized in that, the resin Composition of described resin combination be epoxy resin, cyanate ester resin, polyphenylene oxide resin, polybutadiene, butadiene styrene resin, BT resin, polyflon, polyimide resin, phenolic resins, and acrylate in one or more; This resin combination does not comprise or comprises ceramic packing, and ceramic packing is selected from one or more in titanium dioxide, silica, aluminium oxide, boron nitride, aluminium nitride, barium titanate, strontium titanates, barium strontium titanate, calcium barium titanate, the plumbous pottery of zirconia titanate, lead titanates-niobic acid magnesium lead, carbon black, CNT, tri-iron tetroxide, metal and the metal oxide powder.
4. one kind is buried capacity materials, it is characterized in that, comprising: mushy organic film and be overlaid on the gluing metal forming of its both sides, described gluing metal forming comprise metal forming and are coated with thereon resin combination.
5. the capacity materials that buries as claimed in claim 4, it is characterized in that, described mushy organic film is made by polyester, polyamine, polyacrylic acid, polyimides, aramid fiber, polytetrafluoroethylene (PTFE) or syndiotactic polytyrene, and this mushy organic film is mushy expanded ptfe film, mushy polyethylene film, mushy polypropylene film or mushy Kapton; This mushy organic film thickness is 2~50 μ m, and the aperture of its mesopore is 1~500 μ m, and porosity is 30~98%; Metal forming is the alloy or the composite metallic material of copper, brass, aluminium, nickel or these metals, and its thickness is 12~150 μ m.
6. the capacity materials that buries as claimed in claim 4, it is characterized in that, the resin Composition of described resin combination be epoxy resin, cyanate ester resin, polyphenylene oxide resin, polybutadiene, butadiene styrene resin, BT resin, polyflon, polyimide resin, phenolic resins, and acrylate in one or more; This resin combination does not comprise or comprises ceramic packing, and ceramic packing is selected from one or more in titanium dioxide, silica, aluminium oxide, boron nitride, aluminium nitride, barium titanate, strontium titanates, barium strontium titanate, calcium barium titanate, the plumbous pottery of zirconia titanate, lead titanates-niobic acid magnesium lead, carbon black, CNT, tri-iron tetroxide, metal and the metal oxide powder.
7. a preparation method of burying capacity materials as claimed in claim 1 is characterized in that, may further comprise the steps:
Step 1, provide mushy organic film, and metal forming or gluing metal forming, and the glue of preparation resin combination;
Step 2, flood mushy organic film with the glue of the resin combination of above-mentioned preparation, the baking semi-solid preparation makes prepreg;
Step 3, respectively be laminated with a metal forming or gluing metal forming, put into then in the laminating machine, promptly make and bury capacity materials by hot-press solidifying in the both sides of prepreg.
8. preparation method of burying capacity materials as claimed in claim 7, it is characterized in that, described mushy organic film is made by polyester, polyamine, polyacrylic acid, polyimides, aramid fiber, polytetrafluoroethylene (PTFE) or syndiotactic polytyrene, and this mushy organic film is mushy expanded ptfe film, mushy polyethylene film, mushy polypropylene film or mushy Kapton; Described mushy organic film thickness is 2~50 μ m, and the aperture of its mesopore is 1~500 μ m, and porosity is 30~98%; Described metal forming is the alloy or the composite metallic material of copper, brass, aluminium, nickel or these metals, and its thickness is 12~150 μ m; Described gluing metal forming makes through the baking semi-solid preparation by the glue of coating resin combination on metal forming, and the resin combination of this resin combination and described prepreg is identical or different.
9. a preparation method of burying capacity materials as claimed in claim 4 is characterized in that, may further comprise the steps:
Step 1, provide metal forming and mushy organic film, and the glue of preparation resin combination;
Step 2, apply on metal forming or the glue of casting resin composition, the baking semi-solid preparation makes the gluing metal forming;
Step 3, respectively be laminated with a gluing metal forming, put into then in the laminating machine, promptly make and bury capacity materials by hot-press solidifying in mushy organic film both sides.
10. preparation method of burying capacity materials as claimed in claim 9, it is characterized in that, described mushy organic film is made by polyester, polyamine, polyacrylic acid, polyimides, aramid fiber, polytetrafluoroethylene (PTFE) or syndiotactic polytyrene, and this mushy organic film is mushy expanded ptfe film, mushy polyethylene film, mushy polypropylene film or mushy Kapton; Described mushy organic film thickness is 2~50 μ m, and the aperture of its mesopore is 1~500 μ m, and porosity is 30~98%; Metal forming is the alloy or the composite metallic material of copper, brass, aluminium, nickel or these metals, and its thickness is 12~150 μ m.
CN2011101172798A 2011-05-06 2011-05-06 Buried capacitance material and manufacturing method thereof Pending CN102285168A (en)

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102794949A (en) * 2012-08-09 2012-11-28 广东生益科技股份有限公司 Copper-clad plate
CN103247860A (en) * 2012-02-09 2013-08-14 深圳光启创新技术有限公司 Metamaterial and preparation method thereof
CN103350543A (en) * 2013-07-19 2013-10-16 广东生益科技股份有限公司 Capacitor embedding material, preparing method and purpose thereof
CN103350542A (en) * 2013-07-19 2013-10-16 广东生益科技股份有限公司 Capacitor embedding material, preparing method and purpose thereof
CN103395243A (en) * 2013-07-19 2013-11-20 广东生益科技股份有限公司 Embedded capacitor material as well as preparation method and application thereof
CN103402311A (en) * 2013-07-19 2013-11-20 广东生益科技股份有限公司 Material of embedded capacitor as well as preparation method and application thereof
CN107010998A (en) * 2017-02-27 2017-08-04 广东长盈精密技术有限公司 Surface treatment method, ceramic and the ceramoplastic complex of ceramics
CN108966516A (en) * 2018-08-27 2018-12-07 深圳崇达多层线路板有限公司 A kind of one step press buried capacitor technique based on supporting substrate
CN109400006A (en) * 2018-12-17 2019-03-01 安徽升鸿电子有限公司 A kind of dielectric buried capacitor material, preparation method and its usage
CN111312518A (en) * 2018-12-12 2020-06-19 深圳先进技术研究院 Three-dimensional flexible capacitor material and preparation method and application thereof
CN111863442A (en) * 2019-11-28 2020-10-30 深圳和光新材料科技有限公司 Thin film capacitor material and processing method thereof
CN115820154A (en) * 2022-12-07 2023-03-21 广东生益科技股份有限公司 Glue-coated copper foil for capacitor burying and preparation method and application thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4996097A (en) * 1989-03-16 1991-02-26 W. L. Gore & Associates, Inc. High capacitance laminates
CN1942310A (en) * 2004-04-02 2007-04-04 三井金属矿业株式会社 Process for producing double-sided metal clad laminate and double-sided metal clad laminate produced by the process
WO2008126642A1 (en) * 2007-04-10 2008-10-23 Hitachi Chemical Company, Ltd. Metal foil plated laminated board and printed wiring board
CN101460013A (en) * 2008-12-31 2009-06-17 广东生益科技股份有限公司 Composite article for functional resin and metal foil and multilayered printed circuit board manufacturing method using the same
CN101973145A (en) * 2010-08-20 2011-02-16 广东生益科技股份有限公司 Method for preparing embedded material and embedded material prepared thereby

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4996097A (en) * 1989-03-16 1991-02-26 W. L. Gore & Associates, Inc. High capacitance laminates
CN1942310A (en) * 2004-04-02 2007-04-04 三井金属矿业株式会社 Process for producing double-sided metal clad laminate and double-sided metal clad laminate produced by the process
WO2008126642A1 (en) * 2007-04-10 2008-10-23 Hitachi Chemical Company, Ltd. Metal foil plated laminated board and printed wiring board
CN101460013A (en) * 2008-12-31 2009-06-17 广东生益科技股份有限公司 Composite article for functional resin and metal foil and multilayered printed circuit board manufacturing method using the same
CN101973145A (en) * 2010-08-20 2011-02-16 广东生益科技股份有限公司 Method for preparing embedded material and embedded material prepared thereby

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103247860A (en) * 2012-02-09 2013-08-14 深圳光启创新技术有限公司 Metamaterial and preparation method thereof
CN103247860B (en) * 2012-02-09 2017-08-25 深圳光启创新技术有限公司 The preparation method and Meta Materials of a kind of Meta Materials
CN102794949A (en) * 2012-08-09 2012-11-28 广东生益科技股份有限公司 Copper-clad plate
CN102794949B (en) * 2012-08-09 2015-08-19 广东生益科技股份有限公司 copper-clad plate
CN103395243A (en) * 2013-07-19 2013-11-20 广东生益科技股份有限公司 Embedded capacitor material as well as preparation method and application thereof
CN103350543A (en) * 2013-07-19 2013-10-16 广东生益科技股份有限公司 Capacitor embedding material, preparing method and purpose thereof
CN103350542A (en) * 2013-07-19 2013-10-16 广东生益科技股份有限公司 Capacitor embedding material, preparing method and purpose thereof
CN103350542B (en) * 2013-07-19 2016-01-20 广东生益科技股份有限公司 One buries capacity materials, preparation method and its usage
CN103350543B (en) * 2013-07-19 2016-01-20 广东生益科技股份有限公司 One buries capacity materials, preparation method and its usage
CN103395243B (en) * 2013-07-19 2016-06-08 广东生益科技股份有限公司 One buries capacity materials, preparation method and its usage
CN103402311B (en) * 2013-07-19 2016-09-07 广东生益科技股份有限公司 One buries capacity materials, preparation method and its usage
CN103402311A (en) * 2013-07-19 2013-11-20 广东生益科技股份有限公司 Material of embedded capacitor as well as preparation method and application thereof
CN107010998A (en) * 2017-02-27 2017-08-04 广东长盈精密技术有限公司 Surface treatment method, ceramic and the ceramoplastic complex of ceramics
CN108966516A (en) * 2018-08-27 2018-12-07 深圳崇达多层线路板有限公司 A kind of one step press buried capacitor technique based on supporting substrate
CN111312518A (en) * 2018-12-12 2020-06-19 深圳先进技术研究院 Three-dimensional flexible capacitor material and preparation method and application thereof
CN109400006A (en) * 2018-12-17 2019-03-01 安徽升鸿电子有限公司 A kind of dielectric buried capacitor material, preparation method and its usage
CN111863442A (en) * 2019-11-28 2020-10-30 深圳和光新材料科技有限公司 Thin film capacitor material and processing method thereof
CN115820154A (en) * 2022-12-07 2023-03-21 广东生益科技股份有限公司 Glue-coated copper foil for capacitor burying and preparation method and application thereof

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