CN103402311B - One buries capacity materials, preparation method and its usage - Google Patents
One buries capacity materials, preparation method and its usage Download PDFInfo
- Publication number
- CN103402311B CN103402311B CN201310307512.8A CN201310307512A CN103402311B CN 103402311 B CN103402311 B CN 103402311B CN 201310307512 A CN201310307512 A CN 201310307512A CN 103402311 B CN103402311 B CN 103402311B
- Authority
- CN
- China
- Prior art keywords
- capacity materials
- resin
- bury
- bury capacity
- volume
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses one and bury capacity materials, described in bury capacity materials and be made up of the metal forming of film layer and upper and lower both sides thereof, described film layer is formed by the resin combination containing ceramic packing and heat filling.The material of the present invention can reach high-k, high heat conductance excellent comprehensive performance, can meet the performance requirement burying capacity materials.
Description
Technical field
The present invention relates to bury capacity materials technical field, particularly relate to one and bury capacity materials, preparation method and its usage.
Background technology
Along with electronic device develops towards multifunction, miniaturization direction, the ratio shared by the passive device in electronic system
Weight is increasing.Such as in mobile phone, the quantity of passive device is 20 times of active device.Passive device mainly uses table at present
The mode (such as discrete capacitor element) of face attachment, in occupation of the big quantity space of substrate, and on face, interconnection length and pad are many,
Material and the electrical property of system and unfailing performance are greatly lowered.In order to provide more light and handy, performance more preferably, low price,
The electronic system that the reliability of performance is higher, past surface mount packages system is converted to flush type package system is unique
Selection.In all of passive device, the quantity of capacitor is most, by more special attention.
In order to save the space of circuit board surface and reduce electromagnetic interference, by discrete capacitor element with the material of capacity plate antenna
Material form (being two blocks of metal electrodes up and down, the middle slab construction for dielectric) is nuzzled (be laminated into) multilayer circuit board
(PCB), in, it is the trend of solution problem.Patents with regard to this area is inquired into below.
Patent US5079069, US5155655A, US5800575, US5261153 propose the concept burying appearance, for burying appearance
Feasibility provides theories integration, and is described the processing method burying appearance.
Patent US20100105806A1, US6577492B2, US7621041B2, JP3133976B2 are burying joining of capacity materials
Side has been disclosed, and further improves and buries the peel strength of appearance, buries appearance temperature coefficient, water absorption rate.
Patent US7495887B2, US7621041B2, US6150456A, US6657849B1, US6693793B2,
US7413815B2, US7596842B2, US7862900B2, JP2008534806X, have been disclosed in the configuration aspects burying appearance,
Further improve and bury appearance sheet material compressive resistance, leakage current, pliability etc..
But being as electronic product to develop to light, thin, short, little, densification multifunction, the embedment degree of device is more
Old the highest, the power consumption of device is increasing simultaneously, and the heat of working time unit are gets more and more, in order to ensure electronics
The job stability of components and parts, requires more and more higher to the thermal diffusivity of sheet material, and the thermal diffusivity of sheet material is the best, makes under whole aircraft reliability
Fall, even results in product failure, shortens the service life of product.
Burying a capacity materials part as PCB, without good radiating effect, temperature raises, causes burying capacity materials
The problems such as capacitivity decline, dielectric strength reduction, leakage current increase, have a strong impact on the reliability of sheet material, shorten product and use the longevity
Life.For problem above, the present invention proposes one and both can improve and bury capacity materials thermal diffusivity, can reduce again temperature to burying appearance
The composite material with high dielectric constant of the impact of material electric capacity.
Summary of the invention
The invention provides one and bury capacity materials, it has excellent heat conductivility, the stable coefficient of stability, high dielectric
Constant, improves poor radiation during use and causes the problem of product reliability difference, and the material of the present invention can reach Gao Jie
Electric constant, high heat conductance excellent comprehensive performance, can meet the performance requirement burying capacity materials.
In order to achieve the above object, present invention employs following technical scheme:
One buries capacity materials, and it is made up of the metal forming of film layer and upper and lower both sides thereof, and described film layer is by containing pottery
The resin combination of filler and heat filling is formed.
According to the present invention, in described film layer, the resin in resin combination is selected from epoxy resin, cyanate resin, polyphenyl
Ether resin, polybutadiene, butadiene styrene resin, bismaleimide-triazine resin (BT), bimaleimide resin, poly-four
Fluoroethylene resin, polyimide resin, phenolic resin, acrylic resin, liquid crystalline resin, benzoxazine resin, phenoxy resin, fourth
Any one or the mixture of at least two in nitrile rubber, nbr carboxyl terminal or hydroxy'terminated butadiene nitrile rubber, but do not limit
In this.Mixing of the mixture of described mixture such as epoxy resin and cyanate resin, polyphenylene oxide resin and polybutadiene
Compound, butadiene styrene resin and the mixture of the mixture of BT resin, polyflon and polyimide resin, phenolic resin and
The mixture of acrylic resin, the mixture of epoxy resin, cyanate resin and polyphenylene oxide resin, polybutadiene, butylbenzene
Resin and the mixture of BT resin, the mixing of polyflon, polyimide resin, phenolic resin and acrylic resin
Thing.
According to the present invention, described ceramic packing is selected from silica, titanium dioxide, aluminum oxide, barium titanate, strontium titanates, titanium
Any one or the mixing of at least two in acid strontium barium, calcium barium titanate, zirconia titanate lead pottery or lead titanates-lead magnesio-niobate
Thing, but it is not limited to this.The mixture of described mixture such as silica and titanium dioxide, aluminum oxide and the mixing of barium titanate
The mixture of thing, strontium titanates and barium strontium titanate, calcium barium titanate, zirconia titanate lead pottery and the mixture of lead titanates-lead magnesio-niobate, two
The mixture of silica, titanium dioxide and aluminum oxide, the mixture of barium titanate, strontium titanates and barium strontium titanate, calcium barium titanate, metatitanic acid
Zirconium lead pottery, lead titanates-lead magnesio-niobate and the mixture of silica.
In order to reduce the impact increased because of the excessive issuable seepage electric current of particle diameter, the particle diameter moderate of described ceramic packing
Value is 10～1500nm, such as 50nm, 120nm, 180nm, 250nm, 350nm, 450nm, 550nm, 750nm, 950nm,
1000nm, 1100nm, 1150nm, 1300nm or 1400nm, preferably 100～800nm, further preferred 200～700nm.Pottery
The maximum particle diameter of filler is less than 1500nm.
In order to obtain bigger dielectric constant, and add greater amount pottery fill out for obtaining bigger dielectric constant
Material make its dispersed variation influence processing performance in resin, in film layer the percentage by volume of ceramic packing be 15%～
50%, such as 17%, 20%, 23%, 26%, 29%, 32%, 35%, 38%, 41%, 44% or 47%, preferably 20%～45%, further preferably
30%～40%, so can ensure to obtain relatively high dielectric constant, filler good dispersion in resin can be made again.
The percentage by volume of described ceramic packing is defined as follows:
Percentage by volume Vol%=VFiller/ (VResin+VFiller), wherein Vol% is exactly the percentage by volume of ceramic packing, VResinFor thin
The volume of resin, V in resin combination in film layerFillerFor the volume of ceramic packing in the resin combination in film layer.
According to the present invention, possibly together with conductive powder body in described resin combination, described conductive powder body is selected from metal, transition gold
Belonging to any one or the mixture of at least two in alloy, carbon black, carbon fiber or CNT, wherein transition metal is selected from
Cu, Ni, Ag, Al, Zn, Co, Fe, Cr or Mn, described transition metal alloy is the alloy of above-mentioned transition metal.
According to the present invention, described conductive powder body surface ceramic packing cladding, the ceramic packing of described cladding is selected from two
Silica, titanium dioxide, aluminum oxide, barium titanate, strontium titanates, barium strontium titanate, calcium barium titanate, zirconia titanate lead pottery, lead titanates-niobium
Any one or the mixture of at least two in magnesium lead plumbate, but it is not limited to this.Described mixture such as silica and two
The mixture of the mixture of the mixture of titanium oxide, aluminum oxide and barium titanate, strontium titanates and barium strontium titanate, calcium barium titanate, metatitanic acid
Zirconium lead pottery and the mixture of lead titanates-lead magnesio-niobate, the mixture of silica, titanium dioxide and aluminum oxide, barium titanate, titanium
Acid strontium and the mixture of barium strontium titanate, calcium barium titanate, zirconia titanate lead pottery, lead titanates-lead magnesio-niobate and the mixing of silica
Thing.
According to the present invention, in the particle diameter of conductive powder body, angle value is 30～700nm, such as 50nm, 80nm, 180nm, 250nm,
300nm, 400nm, 500nm, 600nm or 650nm, preferably 100～500nm.
According to the present invention, the percentage by volume of described conductive powder body is 15%～50%, such as 15%, 18%, 22%, 26%,
32%, 36%, 41%, 45%, 49%, 50%, preferably 20%～45%, further preferred 30%～40%.
The percentage by volume of described conductive powder body is defined as follows:
Percentage by volume Vol%=VConductive powder body/ (VResin+VConductive powder body), wherein Vol% is exactly the percentage by volume of conductive powder body, VResin
For the volume of resin, V in resin combination in film layerConductive powder bodyFor the volume of conductive powder body in the resin combination in film layer.
According to the present invention, described heat filling selected from aluminium nitride, boron nitride, silicon nitride, aluminum oxide, magnesia, beryllium oxide,
Any one or the mixture of at least two in carborundum or boron carbide, but it is not limited to this.Described mixture such as nitrogenizes
Aluminium and the mixture of the mixture of the mixture of boron nitride, silicon nitride and aluminum oxide, magnesia and beryllium oxide, carborundum and carbonization
The mixture of boron, the mixture of aluminium nitride, boron nitride and silicon nitride, the mixture of aluminum oxide, magnesia and beryllium oxide, carbonization
The mixture of silicon, boron carbide and aluminum oxide.
The percentage by volume of described heat filling is 10～50%, and such as 12%, 18%, 25%, 35%, 40%, 45% or 50% are excellent
Select 20～40%.
The percentage by volume of described heat filling is defined as follows:
Percentage by volume Vol%=VHeat filling/ (VResin+VHeat filling), wherein Vol% is exactly the percentage by volume of heat filling, VResin
For the volume of resin, V in resin combination in film layerHeat fillingFor the volume of heat filling in the resin combination in film layer.
In the particle diameter of described heat filling, angle value is 0.01～1.5 μm, such as 0.05 μm, 0.1 μm, 0.5 μm, 0.25 μm,
0.35 μm, 0.4 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm, 1.0 μm, 1.1 μm, 1.2 μm, 1.3 μm or 1.4 μm, maximum particle diameter
Less than 20 μm.For reaching better performance, the surface of heat filling is through processing, as used coupling agent to carry out process etc..
According to the present invention, the thickness of film layer is 5～50 μm, such as 8 μm, 12 μm, 17 μm, 22 μm, 28 μm, 32 μm, 37 μ
M, 42 μm, 45 μm or 48 μm, preferably 7～30 μm, further preferred 8～10 μm.
According to the present invention, described metal forming is in copper, brass, aluminium, nickel, copper alloy, brass alloys, aluminium alloy or nickel alloy
Any one or the combination of at least two, the thickness of metal forming is 5～150 μm, such as 15 μm, 18 μm, 25 μm, 30 μm,
40μm、50μm、60μm、70μm、80μm、90μm、110μm、130μm、140μm。
The two of the purpose of the present invention are to provide a kind of preparation method burying capacity materials as above, and described method includes
Following steps:
(1) composition forming film layer is prepared as glue, mould release membrance coats above-mentioned glue, removes after drying
Solvent, separates from mould release membrance, obtains film layer；
(2) an above-mentioned film layer made is placed in the middle of two metal formings, then puts in laminating machine and pass through hot pressing
Solidification prepares and buries capacity materials.
The three of the purpose of the present invention are to provide a kind of purposes burying capacity materials as above, described in bury capacity materials for
Printed circuit board.
Compared with prior art, there is advantages that
What the present invention provided buries capacity materials, and thermal conductivity is good, dielectric constant is high, by heat filling, ceramic packing and conduction
The synergy of powder, buries capacity materials reliability height, capacitivity good stability, and performance is greatly improved.
Accompanying drawing explanation
Further illustrate technical scheme below in conjunction with the accompanying drawings and by detailed description of the invention.
Fig. 1 is for burying capacity materials schematic diagram.
Figure of description is as follows:
1-metal forming 2-film layer.
Detailed description of the invention
For the present invention is better described, it is simple to understand technical scheme, the present invention's is typical but non-limiting
Embodiment is as follows:
Embodiment 1
By 21.6g polyphenylene oxide resin, 45g brominated epoxy resin (epoxy resin B) and 20g phenoxy resin (C), it is dissolved in
In EGME, and add the o-cresol phenolic resin relative to epoxy resin 0.7 mol ratio and 2-MI(2-methyl miaow
Azoles), add the barium titanate 177g that angle value in particle diameter is 10nm, the percentage by volume of barium titanate is 15%, and in particle diameter, angle value is
The boron nitride filler 225g of 10nm, the percentage by volume of boron nitride is 50%, is the most at room temperature mixed to get glue.By gained
Glue is coated on mould release membrance, and then in the baking oven of 155 DEG C, baking is cured as B-stage in 5 minutes, under separating from mould release membrance
Coming, be fabricated to film, thickness is 5 μm.
Then, the film of making is placed between the Copper Foil of 5 μm, is laminated in 190 DEG C and solidifies in press, being solidified
Measuring Dielectric Constant after thing, dielectric loss angle tangent, dielectric strength, Tg, peel strength.Specific performance is shown in Table 1.
Embodiment 2
By 27g bisphenol A epoxide resin (epoxy resin A), 45g brominated epoxy resin (epoxy resin B) and 25g phenol oxygen tree
Fat (C), is dissolved in EGME, and add relative to epoxy resin 0.7 mol ratio o-cresol phenolic resin and
2-MI(2-methylimidazole), add the barium strontium titanate 295g that angle value in particle diameter is 500nm, the percentage by volume of barium strontium titanate is
25%, in particle diameter, angle value is the boron nitride filler 180g of 800nm, and the percentage by volume of boron nitride is 40%, the most at room temperature mixes
Conjunction obtains glue.Being coated on mould release membrance by gained glue, then in the baking oven of 155 DEG C, baking is cured as B-stage in 5 minutes,
Separating from mould release membrance, be fabricated to film, thickness is 25 μm.
Then, the film of making is placed between the Copper Foil of 50 μm, is laminated in 190 DEG C and solidifies in press, consolidate
Measuring Dielectric Constant after compound, dielectric loss angle tangent, dielectric strength, Tg, peel strength.Specific performance is shown in Table 1.
Embodiment 3
By 35.4g PTFE resin, 55g brominated epoxy resin (epoxy resin B) and 20g phenoxy resin (C), it is dissolved in
In EGME, and add the o-cresol phenolic resin relative to epoxy resin 0.7 mol ratio and 2-MI(2-methyl miaow
Azoles), add the barium titanate 472g that angle value in particle diameter is 1000nm, the percentage by volume of barium titanate is 40%, and in particle diameter, angle value is
The aluminium nitride filler 130g of 1200nm, the percentage by volume of aluminium nitride is 20%, is the most at room temperature mixed to get glue.By institute
Obtaining glue to be coated on mould release membrance, then in the baking oven of 155 DEG C, baking is cured as B-stage in 5 minutes, under separating from mould release membrance
Coming, be fabricated to film, thickness is 40 μm.
Then, the film of making is placed between the Copper Foil of 100 μm, is laminated in 190 DEG C and solidifies in press, consolidate
Measuring Dielectric Constant after compound, dielectric loss angle tangent, dielectric strength, Tg, peel strength.
Specific performance is shown in Table 1
Embodiment 4
By 46g polyphenylene oxide resin, 45g brominated epoxy resin (epoxy resin B) and 20g phenoxy resin (C), it is dissolved in second
In glycol methyl ether, and add the o-cresol phenolic resin relative to epoxy resin 0.7 mol ratio and 2-MI(2-methyl miaow
Azoles), add the barium titanate 590g that angle value in particle diameter is 1500nm, the percentage by volume of barium titanate is 50%, and in particle diameter, angle value is
The boron nitride filler 45g of 1500nm, the percentage by volume of boron nitride is 10%, is the most at room temperature mixed to get glue.By gained
Glue is coated on mould release membrance, and then in the baking oven of 155 DEG C, baking is cured as B-stage in 5 minutes, under separating from mould release membrance
Coming, be fabricated to film, thickness is 50 μm.
Then, the film of making is placed between the Copper Foil of 150 μm, is laminated in 190 DEG C and solidifies in press, consolidate
Measuring Dielectric Constant after compound, dielectric loss angle tangent, dielectric strength, Tg, peel strength.Specific performance is shown in Table 1
Embodiment 5
By 21.6g polyphenylene oxide resin, 45g brominated epoxy resin (epoxy resin B) and 20g phenoxy resin (C), it is dissolved in
In EGME, and add the o-cresol phenolic resin relative to epoxy resin 0.7 mol ratio and 2-MI(2-methyl miaow
Azoles), add the silver powder 315g that angle value in particle diameter is the coated by titanium dioxide of 30nm, the percentage by volume of silver powder is 15%, particle diameter
Middle angle value is the boron nitride filler 225g of 800nm, and the percentage by volume of boron nitride is 50%, is the most at room temperature mixed to get glue
Liquid.Being coated on mould release membrance by gained glue, then in the baking oven of 155 DEG C, baking is cured as B-stage, from mould release membrance in 5 minutes
On separate, be fabricated to film, thickness is 5 μm.
Then, the film of making is placed between the Copper Foil of 50 μm, is laminated in 190 DEG C and solidifies in press, consolidate
Measuring Dielectric Constant after compound, dielectric loss angle tangent, dielectric strength, Tg, peel strength.Specific performance is shown in Table 1.
Embodiment 6
By 35.4g PTFE resin, 55g brominated epoxy resin (epoxy resin B) and 20g phenoxy resin (C), it is dissolved in
In EGME, and add the o-cresol phenolic resin relative to epoxy resin 0.7 mol ratio and 2-MI(2-methyl miaow
Azoles), add the aluminium powder 216g that angle value in particle diameter is the coated by titanium dioxide of 300nm, the percentage by volume of barium titanate is 40%,
In particle diameter, angle value is the aluminium nitride filler 130g of 800nm, and the percentage by volume of aluminium nitride is 20%, the most at room temperature mixes
To glue.Gained glue is coated on mould release membrance, then in the baking oven of 155 DEG C baking within 5 minutes, be cured as B-stage, from from
Separating on type film, be fabricated to film, thickness is 40 μm.
Then, the film of making is placed between the Copper Foil of 50 μm, is laminated in 190 DEG C and solidifies in press, consolidate
Measuring Dielectric Constant after compound, dielectric loss angle tangent, dielectric strength, Tg, peel strength.Specific performance is shown in Table 1
Embodiment 7
By 46g polyphenylene oxide resin, 45g brominated epoxy resin (epoxy resin B) and 20g phenoxy resin (C), it is dissolved in second
In glycol methyl ether, and add the o-cresol phenolic resin relative to epoxy resin 0.7 mol ratio and 2-MI(2-methyl miaow
Azoles), add the aluminium powder 270g that angle value in particle diameter is the coated by titanium dioxide of 700nm, the percentage by volume of aluminium powder is 50%, grain
In footpath, angle value is the boron nitride filler 45g of 800nm, and the percentage by volume of boron nitride is 10%, is the most at room temperature mixed to get glue
Liquid.Being coated on mould release membrance by gained glue, then in the baking oven of 155 DEG C, baking is cured as B-stage, from mould release membrance in 5 minutes
On separate, be fabricated to film, thickness is 50 μm.
Then, the film of making is placed between the Copper Foil of 50 μm, is laminated in 190 DEG C and solidifies in press, consolidate
Measuring Dielectric Constant after compound, dielectric loss angle tangent, dielectric strength, Tg, peel strength.Specific performance is shown in Table 1
Embodiment 8
By 27g bisphenol A epoxide resin (epoxy resin A), 45g brominated epoxy resin (epoxy resin B) and 25g phenol oxygen tree
Fat (C), is dissolved in EGME, and add relative to epoxy resin 0.7 mol ratio o-cresol phenolic resin and
2-MI(2-methylimidazole), add the barium strontium titanate 295g that angle value in particle diameter is 500nm, in particle diameter, angle value is the nitrogen of 800nm
Changing boron filler 180g, in particle diameter, angle value is the aluminium powder 81g of the coated by titanium dioxide of 700nm, is the most at room temperature mixed to get glue
Liquid.Being coated on mould release membrance by gained glue, then in the baking oven of 155 DEG C, baking is cured as B-stage, from mould release membrance in 5 minutes
On separate, be fabricated to film, thickness is 25 μm.
Then, the film of making is placed between the Copper Foil of 50 μm, is laminated in 190 DEG C and solidifies in press, consolidate
Measuring Dielectric Constant after compound, dielectric loss angle tangent, dielectric strength, Tg, peel strength.Specific performance is shown in Table 1.
Comparative example 1
By 35.4g PTFE resin, 55g brominated epoxy resin (epoxy resin B) and 20g phenoxy resin (C), it is dissolved in
In EGME, and add the o-cresol phenolic resin relative to epoxy resin 0.7 mol ratio and 2-MI(2-methyl miaow
Azoles), add the barium titanate 472g that angle value in particle diameter is 1000nm, be the most at room temperature mixed to get glue.By gained glue
Being coated on mould release membrance, then in the baking oven of 155 DEG C, baking is cured as B-stage in 5 minutes, separates from mould release membrance, system
Being made film, thickness is 40 μm.
Then, the film of making is placed between the Copper Foil of 50 μm, is laminated in 190 DEG C and solidifies in press, consolidate
Measuring Dielectric Constant after compound, dielectric loss angle tangent, dielectric strength, Tg, peel strength.Specific performance is shown in Table 2.
Comparative example 2
By 35.4g PTFE resin, 55g brominated epoxy resin (epoxy resin B) and 20g phenoxy resin (C), it is dissolved in
In EGME, and add the o-cresol phenolic resin relative to epoxy resin 0.7 mol ratio and 2-MI(2-methyl miaow
Azoles), add the aluminium powder 216g that angle value in particle diameter is the coated by titanium dioxide of 300nm, be the most at room temperature mixed to get glue.
Being coated on mould release membrance by gained glue, then in the baking oven of 155 DEG C, baking is cured as B-stage in 5 minutes, divides from mould release membrance
From getting off, being fabricated to film, thickness is 40 μm.
Then, the film of making is placed between the Copper Foil of 50 μm, is laminated in 190 DEG C and solidifies in press, consolidate
Measuring Dielectric Constant after compound, dielectric loss angle tangent, dielectric strength, Tg, peel strength.Specific performance is shown in Table 2.
Comparative example 3
By 27g bisphenol A epoxide resin (epoxy resin A), 45g brominated epoxy resin (epoxy resin B) and 25g phenol oxygen tree
Fat (C), is dissolved in EGME, and add relative to epoxy resin 0.7 mol ratio o-cresol phenolic resin and
2-MI(2-methylimidazole), add the boron nitride filler 180g that angle value in particle diameter is 800nm, be the most at room temperature mixed to get
Glue.Being coated on mould release membrance by gained glue, then in the baking oven of 155 DEG C, baking is cured as B-stage in 5 minutes, from release
Separating on film, be fabricated to film, thickness is 40 μm.
Then, the film of making is placed between the Copper Foil of 50 μm, is laminated in 190 DEG C and solidifies in press, consolidate
Measuring Dielectric Constant after compound, dielectric loss angle tangent, dielectric strength, Tg, peel strength.Specific performance is shown in Table 2.
Table 1
Table 2
The method of testing of above characteristic is as follows::
1, glass transition temperature (Tg): be measured according to the DMA method of IPC-TM-6502.4.24 defined.
2, peel strength (PS): according to experiment condition " after thermal stress " in IPC-TM-6502.4.8 method, test sheet material
Peel strength.
3, dielectric strength: ASTM D149-09 method is tested, test condition is A state
4, dielectric properties: SPDR(splite post dielectric resonator) method tests, test condition
For A state, 1.1GHz.
5, heat conductivility method of testing:: use ASTM D5470 standard method test.
From the contrast of embodiment and comparative example it can be seen that embodiment 1,2,3,4,5,6,7,8 with the addition of heat filling, pottery
Porcelain filling or conductive filler, its dielectric constant, thermal conductivity are the highest.Comparative example 1,2 does not add heat filling, the Dk of sheet material
It is worth higher, but thermal conductivity is little；Not adding high dielectric filler in comparative example 3, the thermal conductivity of sheet material is high, but DK value is little.
Combining the above results to understand, the material of the present invention can reach high-k, high heat conductance excellent comprehensive performance, can
To meet the performance requirement burying capacity materials.
Above example, not imposes any restrictions the content of the composition of the present invention, every technology according to the present invention
Any trickle amendment, equivalent variations and the modification that above example is made by essence or composition composition or content, all still falls within
In the range of technical solution of the present invention.
Applicant states, by above-described embodiment, the present invention illustrates that the detailed of the present invention forms, but the present invention not office
It is limited to above-mentioned detailed composition, does not i.e. mean that the present invention has to rely on above-mentioned detailed composition and could implement.Art
Technical staff is it will be clearly understood that any improvement in the present invention, and the equivalence of raw material each to product of the present invention is replaced and auxiliary element
Interpolation, concrete way choice etc., within the scope of all falling within protection scope of the present invention and disclosure.
Claims (27)
1. one kind is buried capacity materials, it is characterised in that described in bury capacity materials and be made up of the metal forming of film layer and upper and lower both sides thereof, institute
Stating film layer to be formed by the resin combination containing ceramic packing and heat filling, the percentage by volume of described ceramic packing is
15%～50%.
Bury capacity materials the most as claimed in claim 1, it is characterised in that the resin in described resin combination is selected from asphalt mixtures modified by epoxy resin
Fat, cyanate resin, polyphenylene oxide resin, polybutadiene, butadiene styrene resin, bismaleimide-triazine resin, span carry out acyl
Imide resin, polyflon, polyimide resin, phenolic resin, acrylic resin, liquid crystalline resin, benzoxazine tree
Any one or at least two in fat, phenoxy resin, nitrile rubber, nbr carboxyl terminal or hydroxy'terminated butadiene nitrile rubber
Mixture.
Bury capacity materials the most as claimed in claim 1 or 2, it is characterised in that described ceramic packing is selected from silica, titanium dioxide
Appointing in titanium, aluminum oxide, barium titanate, strontium titanates, barium strontium titanate, calcium barium titanate, zirconia titanate lead pottery or lead titanates-lead magnesio-niobate
Anticipate a kind of or mixture of at least two.
Bury capacity materials the most as claimed in claim 1 or 2, it is characterised in that in the particle diameter of described ceramic packing angle value be 10～
1500nm。
Bury capacity materials the most as claimed in claim 4, it is characterised in that in the particle diameter of described ceramic packing angle value be 100～
800nm。
Bury capacity materials the most as claimed in claim 5, it is characterised in that in the particle diameter of described ceramic packing angle value be 200～
700nm。
Bury capacity materials the most as claimed in claim 1 or 2, it is characterised in that the percentage by volume of described ceramic packing is 20%
～45%.
Bury capacity materials the most as claimed in claim 7, it is characterised in that the percentage by volume of described ceramic packing be 30%～
40%.
9. as described in one of claim 1-2, bury capacity materials, it is characterised in that described resin combination is possibly together with conducting powder
Body, described conductive powder body in metal, transition metal alloy, carbon black, carbon fiber or CNT any one or extremely
The mixture of few two kinds, wherein transition metal is selected from Cu, Ni, Ag, Zn, Co, Fe, Cr or Mn.
Bury capacity materials the most as claimed in claim 9, it is characterised in that described conductive powder body surface ceramic packing is coated with, institute
State the ceramic packing of cladding selected from silica, titanium dioxide, aluminum oxide, barium titanate, strontium titanates, barium strontium titanate, calcium barium titanate,
Zirconia titanate lead pottery, any one or the mixture of at least two in lead titanates-lead magnesio-niobate.
11. bury capacity materials as claimed in claim 9, it is characterised in that in the particle diameter of conductive powder body, angle value is 30～700nm.
12. bury capacity materials as claimed in claim 11, it is characterised in that in the particle diameter of conductive powder body angle value be 100～
500nm。
13. bury capacity materials as claimed in claim 9, it is characterised in that the percentage by volume of described conductive powder body be 15%～
50%.
14. bury capacity materials as claimed in claim 13, it is characterised in that the percentage by volume of described conductive powder body be 20%～
45%.
15. bury capacity materials as claimed in claim 14, it is characterised in that the percentage by volume of described conductive powder body be 30%～
40%.
16. bury capacity materials as described in one of claim 1-2, it is characterised in that described heat filling is selected from aluminium nitride, nitridation
Any one or the mixing of at least two in boron, silicon nitride, aluminum oxide, magnesia, beryllium oxide, carborundum or boron carbide
Thing.
17. bury capacity materials as described in one of claim 1-2, it is characterised in that the percentage by volume of described heat filling is
10～50%.
18. bury capacity materials as claimed in claim 17, it is characterised in that the percentage by volume of described heat filling be 20～
40%.
19. bury capacity materials as described in one of claim 1-2, it is characterised in that in the particle diameter of described heat filling, angle value is
0.01～1.5 μm.
20. bury capacity materials as described in one of claim 1-2, it is characterised in that the surface of described heat filling is through processing.
21. bury capacity materials as described in one of claim 1-2, it is characterised in that the thickness of described film layer is 5～50 μm.
22. bury capacity materials as claimed in claim 21, it is characterised in that the thickness of described film layer is 7～30 μm.
23. bury capacity materials as claimed in claim 22, it is characterised in that the thickness of described film layer is 8～10 μm.
24. bury capacity materials as described in one of claim 1-2, it is characterised in that described metal forming is that copper, aluminium, nickel, copper close
Any one or the combination of at least two in gold, aluminium alloy or nickel alloy, the thickness of described metal forming is 5～150 μm.
25. bury capacity materials as described in one of claim 1-2, it is characterised in that described metal forming is brass or brass alloys.
26. 1 kinds of preparation methods burying capacity materials as described in one of claim 1-25, it is characterised in that described method includes
Following steps:
(1) resin combination forming film layer is prepared as glue, mould release membrance coats above-mentioned glue, removes after drying
Solvent, separates from mould release membrance, obtains film layer；
(2) an above-mentioned film layer made is placed in the middle of two metal formings, then puts in laminating machine and pass through hot-press solidifying
Prepare and bury capacity materials.
27. 1 kinds of purposes burying capacity materials as described in one of claim 1-25, it is characterised in that described in bury capacity materials for
Printed circuit board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310307512.8A CN103402311B (en) | 2013-07-19 | 2013-07-19 | One buries capacity materials, preparation method and its usage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310307512.8A CN103402311B (en) | 2013-07-19 | 2013-07-19 | One buries capacity materials, preparation method and its usage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103402311A CN103402311A (en) | 2013-11-20 |
| CN103402311B true CN103402311B (en) | 2016-09-07 |
Family
ID=49565796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310307512.8A Active CN103402311B (en) | 2013-07-19 | 2013-07-19 | One buries capacity materials, preparation method and its usage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103402311B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104861939B (en) * | 2015-06-12 | 2018-02-13 | 矽照光电（厦门）有限公司 | A kind of heat sink material and the soft bar lamp FPCs of LED based on the material |
| CN106084667B (en) * | 2016-07-12 | 2018-08-03 | 佛山市顺德区雅蕾新材料有限公司 | A kind of high-k composition epoxy resin and application thereof |
| CN106427136A (en) * | 2016-09-29 | 2017-02-22 | 广东生益科技股份有限公司 | High-dielectric material and preparation method and application thereof |
| CN107641310B (en) * | 2017-07-17 | 2019-03-22 | 常州中英科技股份有限公司 | A kind of high thermal conductivity polyphenyl ether copper-clad plate and preparation method thereof |
| CN108831744B (en) * | 2018-05-24 | 2020-07-03 | 天津大学 | Method for improving heat dissipation of polypropylene film |
| CN109400006A (en) * | 2018-12-17 | 2019-03-01 | 安徽升鸿电子有限公司 | A kind of dielectric buried capacitor material, preparation method and its usage |
| CN110310829A (en) * | 2019-05-23 | 2019-10-08 | 深圳先进技术研究院 | Buried capacitor material, preparation method and printed wiring board |
| CN110752093A (en) * | 2019-10-10 | 2020-02-04 | 深圳市峰泳科技有限公司 | Double-sided-etchable flexible thin-film capacitor material with high dielectric constant and preparation method thereof |
| CN110698725B (en) * | 2019-10-10 | 2021-05-18 | 深圳市峰泳科技有限公司 | Inorganic filler, preparation method thereof and application thereof in dielectric material |
| CN115820154A (en) * | 2022-12-07 | 2023-03-21 | 广东生益科技股份有限公司 | Glue-coated copper foil for capacitor burying and preparation method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1374666A (en) * | 2000-08-24 | 2002-10-16 | 奥克-三井有限公司 | Formation of embedded capacitor polar plate sing thin dielectric |
| CN101194326A (en) * | 2005-02-22 | 2008-06-04 | 奥克-三井有限公司 | Multilayered construction for resistor and capacitor formation |
| CN102285168A (en) * | 2011-05-06 | 2011-12-21 | 广东生益科技股份有限公司 | Buried capacitance material and manufacturing method thereof |
| CN102481598A (en) * | 2009-06-11 | 2012-05-30 | 罗杰斯公司 | Dielectric materials, methods of forming subassemblies therefrom, and the subassemblies formed therewith |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6693793B2 (en) * | 2001-10-15 | 2004-02-17 | Mitsui Mining & Smelting Co., Ltd. | Double-sided copper clad laminate for capacitor layer formation and its manufacturing method |
| US7413815B2 (en) * | 2004-02-19 | 2008-08-19 | Oak-Mitsui Inc. | Thin laminate as embedded capacitance material in printed circuit boards |
-
2013
- 2013-07-19 CN CN201310307512.8A patent/CN103402311B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1374666A (en) * | 2000-08-24 | 2002-10-16 | 奥克-三井有限公司 | Formation of embedded capacitor polar plate sing thin dielectric |
| CN101194326A (en) * | 2005-02-22 | 2008-06-04 | 奥克-三井有限公司 | Multilayered construction for resistor and capacitor formation |
| CN102481598A (en) * | 2009-06-11 | 2012-05-30 | 罗杰斯公司 | Dielectric materials, methods of forming subassemblies therefrom, and the subassemblies formed therewith |
| CN102285168A (en) * | 2011-05-06 | 2011-12-21 | 广东生益科技股份有限公司 | Buried capacitance material and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103402311A (en) | 2013-11-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103402311B (en) | One buries capacity materials, preparation method and its usage | |
| CN103358631B (en) | One is buried dielectric layer for capacity materials, is buried capacity materials, preparation method and its usage | |
| JP6612584B2 (en) | Epoxy resin composition, epoxy resin sheet, and metal base circuit board using the same | |
| CN105415803B (en) | A kind of buried capacitor material dielectric layer, buried capacitor material and application thereof | |
| CN103350542B (en) | One buries capacity materials, preparation method and its usage | |
| CN102285168A (en) | Buried capacitance material and manufacturing method thereof | |
| JP5442491B2 (en) | Thermally conductive metal-insulating resin substrate and manufacturing method thereof | |
| KR20150086343A (en) | Multilayer ceramic electronic component | |
| CN111230125A (en) | Copper paste for bonding, method for producing bonded body, and method for producing semiconductor device | |
| JPWO2009008471A1 (en) | Copper foil with dielectric layer | |
| JP2010245139A (en) | High-frequency module having shielding and heat-releasing property and method of manufacturing the same | |
| CN105960709B (en) | Thermally conductive sheet and semiconductor device | |
| CN104303605B (en) | Metal base printed circuit board | |
| JP2016192474A (en) | Granulated powder, resin composition for heat dissipation, heat dissipation sheet, heat dissipation member, and semiconductor device | |
| CN107211530B (en) | Metal base circuit board and manufacturing method thereof | |
| CN103395243B (en) | One buries capacity materials, preparation method and its usage | |
| CN103042762B (en) | High thermal conductive metal substrate | |
| JP5369163B2 (en) | Insulating sheet and semiconductor device | |
| JP2017028128A (en) | Substrate for power module, circuit board for power module, and power module | |
| JP6125528B2 (en) | Light emitting diode substrate and method for manufacturing light emitting diode substrate | |
| JP2008308576A (en) | Process for producing thermally conductive resin sheet, thermally conductive resin sheet and power module using the same | |
| CN103350543B (en) | One buries capacity materials, preparation method and its usage | |
| JP2007084704A (en) | Resin composition and circuit board and package using the same | |
| JP2018098219A (en) | Semiconductor device and manufacturing method of the same | |
| CN103287012B (en) | Medium substrate based on composite and manufacture method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |