CN102282480B - X-ray imaging device - Google Patents
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- CN102282480B CN102282480B CN2010800045055A CN201080004505A CN102282480B CN 102282480 B CN102282480 B CN 102282480B CN 2010800045055 A CN2010800045055 A CN 2010800045055A CN 201080004505 A CN201080004505 A CN 201080004505A CN 102282480 B CN102282480 B CN 102282480B
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- 238000003384 imaging method Methods 0.000 title abstract description 49
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 95
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 95
- 238000001514 detection method Methods 0.000 claims abstract description 30
- 239000004411 aluminium Substances 0.000 claims description 91
- 238000003475 lamination Methods 0.000 claims description 87
- 238000012360 testing method Methods 0.000 claims description 29
- 229920001721 polyimide Polymers 0.000 claims description 14
- 239000004642 Polyimide Substances 0.000 claims description 13
- 230000000694 effects Effects 0.000 abstract description 16
- 230000015572 biosynthetic process Effects 0.000 description 51
- 238000005755 formation reaction Methods 0.000 description 51
- 239000011347 resin Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 238000012216 screening Methods 0.000 description 11
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000003628 erosive effect Effects 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000000637 aluminium metallisation Methods 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/244—Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
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- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Abstract
An X-ray imaging device (1) is configured by a back-surface incident solid-state imaging element (10), on one surface (11) side of which an X-ray detection section in which a plurality of detection pixels for detecting incident X-rays are arranged is provided, and the other surface (12) of which serves as an X-ray incidence plane, and a shielding layer (20) which is provided on the incidence plane (12) of the imaging element (10), and which is used for the shielding of light of longer wavelengths than those of X-rays to be detected. The shielding layer (20) is provided with a first aluminum layer (21) which is directly provided on the incidence plane (12), a second aluminum layer (22) which is provided on the first aluminum layer (21), and an ultraviolet light shielding layer (25) which is provided between the first and second aluminum layers (21, 22), and which is used for the shielding of ultraviolet light. As a result, an X-ray imaging device capable of suppressing the effect of detection of noise light in X-ray detection is achieved.
Description
Technical field
The present invention relates to detect the X ray that is incident to solid-state imager and obtain the X-ray image-pickup device of X ray picture.
Background technology
The CCD of X ray direct-detection type (Charge Coupled Device) is that the detection pixel at CCD directly catches the photon of X ray and obtains the X ray picture, thereby obtains the X-ray detector of the positional information, energy information, temporal information etc. of incident X-rays.The solid-state imager of the CCD (hereinafter referred to as X ray CCD) of such X ray direct-detection type etc. is owing to having good position resolution and energy resolution, therefore as for example use (about X-ray detector, for example with reference to patent documentation 1～3) at the X-ray detector of the standard of X ray orbiting astronomical observatory.
Patent documentation
Patent documentation 1: TOHKEMY 2001-249184 communique
Patent documentation 2: TOHKEMY 2008-107203 communique
Patent documentation 3: Japanese kokai publication hei 06-302795 communique
Summary of the invention
Invent problem to be solved
Above-mentioned X ray CCD has basically identical with general CCD structure.Therefore, X ray CCD respectively detects pixel not only to becoming the X ray of detected object, and long light (noise light) such as the wavelength ratio X ray of ultraviolet light, visible light, infrared light etc. is had detection sensitivity.In the imaging apparatus take the X ray direct-detection as purpose, the detection of such long wavelength's (low-yield) noise light can become the reason of the deteriorated grade of the S/N characteristic that X ray detects.
In order to suppress the detection of such noise light, use following methods: be arranged on AM aluminum metallization on polyimide film and the film that is called OBF (Optical Blocking Filter, light cover optical filter) that forms for the imaging apparatus of X ray CCD etc., consist of thus X-ray image-pickup device (X ray video camera).Such OBF is installed between the X ray mirror and imaging apparatus that for example the X ray boundling is used.
Yet, in such formation, be used for installing in the inside of X-ray image-pickup device the space of OBF due to needs, thereby device maximized.In addition, be transmitted through imaging apparatus in order to make the X ray via OBF incident, be necessary to make the thickness attenuation of OBF, thereby exist the camera head that comprises OBF in the textural problem that becomes fragile.In addition, as mentioned above, in the situation that camera head is equipped on X ray orbiting astronomical observatory etc., can special-purpose vent valve etc. not being set because differential pressure makes the mode of OBF breakage after being released into the cosmic space, thereby make apparatus structure complicated.In addition, complicated along with such apparatus structure, the risk that is equipped in the utilization of X-ray image-pickup device of observation satellite also can increase.
The present invention is the invention of completing in order to solve above problem, and its purpose is, a kind of X-ray image-pickup device of impact of the detection that can suitably suppress noise light is provided.
The technological means of dealing with problems
In order to reach such purpose, X-ray image-pickup device of the present invention is characterised in that, possess: the solid-state imager of (1) back surface incident type, be provided with a face side X ray test section that one dimension or two-dimensional arrangements have a plurality of detection pixels of the X ray that detects incident, another face becomes the X ray plane of incidence; And (2) shielding layer, be arranged on the X ray plane of incidence of solid-state imager, being used for wavelength ratio becomes covering of the long light of the X ray of detected object, (3) shielding layer have the 1st aluminium lamination that directly is arranged on the X ray plane of incidence, be arranged at the 2nd aluminium lamination on the 1st aluminium lamination and be arranged at the 1st aluminium lamination and the 2nd aluminium lamination between and be used for the ultraviolet light shielding layer that covers of ultraviolet light.
In above-mentioned X-ray image-pickup device, as the imaging apparatus of X ray direct-detection type, use the solid-state imager of back surface incident type.And, for the long noise light of wavelength ratio X ray, as directly form the formation of shielding layer on the X ray plane of incidence of imaging apparatus.According to such formation, can realize comprising the miniaturization of the X-ray image-pickup device integral body of imaging apparatus and means for screening, the simplification of structure.In addition, due to imaging apparatus and shielding layer integrated, thereby camera head can not become fragile textural.
In addition, in above-mentioned camera head, as the 1st aluminium lamination that covers that is formed for visible light and infrared light on the plane of incidence of imaging apparatus and the formation that the ultraviolet light shielding layer also is set thereon.Thus, the wavelength coverage integral body for the noise light that comprises ultraviolet light, visible light and infrared light can obtain sufficient screening effect.In addition, in the outside of ultraviolet light shielding layer, also be provided with the 2nd aluminium lamination.Thus, can suppress erosion of the ultraviolet light shielding layer that causes because of atom shape oxygen etc., thereby can protect the ultraviolet light shielding layer.According to the above, realized suitably to suppress the X-ray image-pickup device of impact of the detection of the noise light of X ray in detecting.
The effect of invention
According to X-ray image-pickup device of the present invention, imaging apparatus as X ray direct-detection type, use the solid-state imager of back surface incident type, directly form shielding layer on the X ray plane of incidence of imaging apparatus, and for shielding layer, as the formation of the shielding layer of 3 layers that comprises at least the 1st aluminium lamination, ultraviolet light shielding layer, the 2nd aluminium lamination from X ray plane of incidence side, thereby can suitably suppress the impact of the detection of the noise light of X ray in detecting.
Description of drawings
Fig. 1 is the stereographic map that shows the basic comprising of X-ray image-pickup device.
Fig. 2 shows above (a) of formation of the 1st embodiment of X-ray image-pickup device figure and (b) side cut away view.
Fig. 3 is the top figure that shows the variation of X-ray image-pickup device shown in Figure 2.
Fig. 4 shows above (a) of formation of the 2nd embodiment of X-ray image-pickup device figure and (b) side cut away view.
Fig. 5 is the top figure that shows the variation of X-ray image-pickup device shown in Figure 4.
Fig. 6 shows above (a) of formation of the 3rd embodiment of X-ray image-pickup device figure and (b) side cut away view.
Fig. 7 is the top figure that shows the variation of X-ray image-pickup device shown in Figure 6.
Fig. 8 shows above (a) of formation of the 4th embodiment of X-ray image-pickup device figure and (b) side cut away view.
Fig. 9 is the top figure that shows the variation of X-ray image-pickup device shown in Figure 8.
The explanation of symbol
1,1A, 1B, 1C, 1D ... X-ray image-pickup device, 10 ... solid-state imager (X ray CCD), 11 ... surface, 12 ... the X ray plane of incidence, 13 ... surface electrode, 15 ... X ray test section, 16 ... electric charge transport unit, 20 ... shielding layer, 21 ... the 1st aluminium lamination, 22 ... the 2nd aluminium lamination, 23 ... conducting portion, 25 ... ultraviolet light shielding layer (polyimide layer), 26 ... peristome, 27 ... resin conducting portion, 28 ... order difference part, 29 ... conducting metal wire, 30 ... the resin conducting portion.
Embodiment
Below, together with accompanying drawing, to preferred embodiment being described in detail of X-ray image-pickup device of the present invention.Also have, in the description of the drawings, to the additional identical symbol of identical key element, the repetitive description thereof will be omitted.In addition, the dimensional ratios of accompanying drawing may not with the explanation consistent.
Fig. 1 is the stereographic map that roughly shows the basic comprising of X-ray image-pickup device of the present invention.X-ray image-pickup device 1 shown in Figure 1 is constituted as possesses solid-state imager 10 and shielding layer 20.The solid-state imager 10 that is used for the detection of X ray is that direct-detection does not obtain the imaging apparatus of the X ray direct-detection type of X ray picture via the X ray of the incidents such as scintillater, can example X ray CCD described above.
Solid-state imager 10 is the imaging apparatus of back surface incident type, is formed with in one face (surface) 11 sides the X ray test section (light accepting part) that one dimension or two-dimensional arrangements have a plurality of detection pixels that detect X ray.In addition, another face (back side) 12 of the opposition side on this surface 11 becomes the X ray plane of incidence of the X ray of incident detected object.
For such imaging apparatus 10, be formed with the shielding layer that covers 20 of light that becomes the X ray long (low-yield) of detected object for wavelength ratio on its X ray plane of incidence 12.Utilize this shielding layer 20, can cover the noise light that comprises ultraviolet light, visible light and infrared light that is incident to imaging apparatus 10 from the X ray plane of incidence 12 sides.
Particularly, shielding layer 20 by the 1st aluminium lamination 21 on the plane of incidence 12 that directly is arranged at imaging apparatus 10, be arranged at the 2nd aluminium lamination 22 of (for the 1st aluminium lamination 21, the opposition side of the plane of incidence 12) on the 1st aluminium lamination 21 and the ultraviolet light shielding layer 25 that is arranged between the 1st, the 2nd aluminium lamination 21,22 consists of.
In this shielding layer 20, the 1st aluminium lamination 21 is used for being incident to the visible light of noise light and the covering of infrared light of imaging apparatus 10.In addition, ultraviolet light shielding layer 25 is used for the covering of ultraviolet light of noise light.In addition, the 2nd aluminium lamination 22 and the 1st aluminium lamination 21 1 are used from covering of visible light and infrared light.In addition, the 2nd aluminium lamination 22 becomes the outermost layer (exposure) of shielding layer 20, plays conduct with respect to the effect of the protective seam of ultraviolet light shielding layer 25 grades of inboard.
In addition, between stacked the 1st aluminium lamination 21 and the 2nd aluminium lamination 22, be provided with the conducting portion 23 with its electrical connection across ultraviolet light shielding layer 25.Also have, about the formation of this conducting portion 23, specifically as hereinafter described.
As ultraviolet light shielding layer 25, particularly, can use for example polyimide layer.In addition, the thickness about each layer of consisting of shielding layer 20 as an one example, can use the thickness with the 1st aluminium lamination 21 to be made as 100nm
To be made as 100nm as the thickness of the polyimide layer of ultraviolet light shielding layer 25
The thickness of the 2nd aluminium lamination 22 is made as 40nm
Formation.
Effect to X-ray image-pickup device of the present invention describes.
In X-ray image-pickup device shown in Figure 11, as the imaging apparatus of X ray direct-detection type, use the solid-state imager 10 of back surface incident type.And, for the long noise light of the X ray of wavelength ratio detected object, not the means for screening with 1 minute OBF that is arranged of camera head etc., but as the direct formation of formation shielding layer 20 on the X ray plane of incidence 12 of imaging apparatus 10.According to such formation, can realize comprising the miniaturization, the simplification of structure of integral body of the X-ray image-pickup device 1 of imaging apparatus 10 and shielding layer 20.In addition, by making imaging apparatus 10 and shielding layer 20 integrated, thereby can prevent that camera head 1 from structurally becoming fragile.
In addition, in the imaging apparatus 10 of back surface incident type, owing to not being formed with the electrode that absorbs ultraviolet light etc. on the X ray plane of incidence 12, thereby each pixel of X ray test section that is formed at surperficial 11 sides has detection sensitivity for the noise light of the wavelength coverage that comprises ultraviolet light, visible light and infrared light.In addition, only arrange on the X ray plane of incidence 12 in the consisting of of the shielding layer that formed by aluminium, can cover visible light and infrared light, but can't obtain sufficient screening effect for ultraviolet light.
With respect to this, in the X-ray image-pickup device 1 of Fig. 1, as the 1st aluminium lamination 21 that covers that is formed for visible light and infrared light on the plane of incidence 12 of imaging apparatus 10 and the formation that ultraviolet light shielding layer 25 also is set thereon.Thus, the wavelength coverage integral body for the noise light that comprises ultraviolet light, visible light and infrared light can obtain sufficient screening effect.At this, generally speaking, the wavelength coverage of ultraviolet light is that the wavelength coverage of 10nm～400nm, visible light is that the wavelength coverage of 400nm～750nm, infrared light is 750nm～100 μ m left and right.
In addition, in the outside of ultraviolet light shielding layer 25, also be provided with the 2nd aluminium lamination 22.Utilize the 2nd such aluminium lamination 22, even in the situation that on the 1st aluminium lamination 21, pin hole etc. is arranged, the 1st, the 2nd aluminium lamination 21,22 is matched and obtain the screening effect of sufficient visible light and infrared light.In addition, the 2nd aluminium lamination 22 also has the function that suppresses the inflow of the heat that causes because of radiation etc. of solid-state imager 10.
In addition, such X-ray image-pickup device is being equipped on observation satellite etc. and in the situation that use in the cosmic space, because the erosion that is present in the ultraviolet light shielding layer (for example polyimide layer) that atom shape oxygen on its swing-around trajectory etc. causes becomes problem.With respect to this, according to the formation of above-mentioned arranged outside the 2nd aluminium lamination 22 at ultraviolet light shielding layer 25, can suppress the erosion of the ultraviolet light shielding layer 25 that causes because of atom shape oxygen etc.According to the above, according to above-mentioned formation, realized suitably to suppress the X-ray image-pickup device 1 of impact of the detection of the noise light of X ray in detecting.
At this, in shielding layer 20, about being arranged at the ultraviolet light shielding layer 25 between the 1st, the 2nd aluminium lamination 21,22, particularly, as mentioned above, being preferably and using the shielding layer that is consisted of by polyimide layer.According to such polyimide layer, can obtain sufficient screening effect for the ultraviolet light that is incident to imaging apparatus 10.
In addition, about the material of ultraviolet light shielding layer 25, usually be not limited to polyimide, can use the less material of atom sequence number such as the organic material of teflon (Teflon) (registered trademark), PET etc. or carbon, beryllium etc.About the material of such ultraviolet light shielding layer 25, be preferably the ultraviolet light wavelength (energy) of considering wish cut-off in the camera head 1 of reality, detected object X ray energy etc. actual conditions and select.
In addition, in the shielding layer 20 of above-mentioned formation, the 2nd aluminium lamination 22 is preferably the outermost layer that becomes shielding layer 20.Thus, can suppress reliably the erosion of the shielding layer (for example polyimide layer) that causes because of above-mentioned atom shape oxygen etc.
In addition, about the scope of the thickness of each layer of consisting of shielding layer 20, for example be preferably the 1st, the 2nd aluminium lamination 21,22 thickness are made as respectively below 100nm, the thickness of the ultraviolet light shielding layer 25 of polyimide is made as below the above 300nm of 50nm.But, concrete structure condition about such shielding layer 20, due to because of the environment for use of camera head 1, the testing conditions of X ray etc., the differences such as X ray and noise light intensity, Wavelength distribution, thereby be necessary to consider that the optimum film thickness etc. of each layer of shielding layer 20 changes according to these conditions.
In addition, as the ground demonstration of Fig. 1 institute's pattern, be preferably for the above-mentioned shielding layer with stepped construction 20, be provided with the conducting portion 23 that is electrically connected to the 1st aluminium lamination 21 and the 2nd aluminium lamination 22.Thus, can prevent from being positioned at the 2nd aluminium lamination 22 charged in the outside, thereby imaging apparatus 10 is stably moved.
In this case, be preferably with respect to solid-state imager 10, conducting portion 23 is arranged at except corresponding to (breaking away from when seeing from the X ray incident direction in the zone of X ray test section) in the zone the zone of X ray test section.The position of conducting portion 23 is set by such setting, thereby the reduction for the screening effect of the ultraviolet light of X ray test section that can prevent from causing by form conducting portion 23 between the 1st, the 2nd aluminium lamination 21,22, and can cover reliably noise light in the integral body of the X ray test section that is consisted of by a plurality of detection pixels.
Together with its concrete embodiment, further the formation of X-ray image-pickup device of the present invention described.Also have, in each following figure, figure, for the ease of observing figure, the additional oblique line of the part that is equivalent to conducting portion 23 is represented on the formation that shows when the X ray incident direction of X-ray image-pickup device is seen.
Fig. 2 shows above (a) of formation of the 1st embodiment of X-ray image-pickup device figure and (b) side cut away view.At this, Fig. 2 (b) shows the sectional view along the I-I line shown in Fig. 2 (a).The X-ray image-pickup device 1A of present embodiment is constituted as possesses solid-state imager 10 and shielding layer 20.In addition, shielding layer 20 is made of the 1st aluminium lamination 21, ultraviolet light shielding layer 25 and the 2nd aluminium lamination 22.
In the surface of imaging apparatus 10 (below in figure) 11 sides, be provided with the X ray test section 15 that in its specialized range two-dimensional arrangements has the rectangle of a plurality of detection pixels.In addition, at an avris (the right side in figure) of X ray test section 15, be provided with for the electric charge transport unit 16 that transmits, exports the electric charge that generates by each pixel detection X ray at test section 15.In addition, as the ground demonstration of Fig. 2 (b) institute's pattern, be formed with on the surface 11 of imaging apparatus 10 in order to realize each key element as needed surface electrode 13 grades of the function of imaging apparatus 10 (such as CCD).
In the X-ray image-pickup device 1A of present embodiment, be arranged in except the shielding layer 20 corresponding to the zone the zone of the X ray test section 15 of imaging apparatus 10, namely in the concrete example shown in Fig. 2 (a), at the shielding layer 20 that is arranged in by the zone of the right clamping of the right of X ray test section 15 and imaging apparatus 10, be arranged at ultraviolet light shielding layer 25 along the peristome 26 of the right extension of imaging apparatus 10.And, thereby consist of and be electrically connected to aluminium laminations 21,22 conducting portion 23 by fill this peristome 26 with aluminium.According to such formation, can be on one side guarantee screening effect for the noise light of X ray test section 15 integral body by shielding layer 20, by conducting portion 23 make aluminium lamination 21,22 conductings on one side, thereby can suitably prevent the charged of the 2nd aluminium lamination 22.
Fig. 3 shows the variation of X-ray image-pickup device shown in Figure 2, as shown in Figure 3, about the formation of peristome 26 and the conducting portion 23 of ultraviolet light shielding layer 25, particularly, can use various formations.In the formation shown in Fig. 3 (a), be arranged in by the zone of the right clamping of the right of test section 15 and imaging apparatus 10, by the zone of the left side clamping of the left side of test section 15 and imaging apparatus 10, by the zone of the top clamping of the top of test section 15 and imaging apparatus 10 and by test section 15 below with the regional shielding layer 20 of the following clamping of imaging apparatus 10, be provided with respectively peristome 26 in ultraviolet light shielding layer 25, thereby consist of conducting portion 23 by fill these peristomes 26 with aluminium.In addition, in the formation shown in Fig. 3 (b), at the shielding layer 20 that is arranged in above-mentioned zone, be provided with to surround the integrated peristome 26 of mode of test section 15, thereby consist of conducting portion 23 by fill this peristome 26 with aluminium.
Fig. 4 shows above (a) of formation of the 2nd embodiment of X-ray image-pickup device figure and (b) side cut away view.At this, Fig. 4 (b) shows the sectional view along the II-II line shown in Fig. 4 (a).The X-ray image-pickup device 1B of present embodiment is constituted as possesses solid-state imager 10 and shielding layer 20.About the formation of imaging apparatus 10 and the basic stepped construction of shielding layer 20, identical with X-ray image-pickup device 1A shown in Figure 2.
In the X-ray image-pickup device 1B of present embodiment, comprise aluminium lamination 21,22 and the side on the right side of the shielding layer 20 of ultraviolet light shielding layer 25 on, be provided with by electroconductive resin and consist of and play resin conducting portion 27 as the effect of conducting portion 23.According to such formation, also can make aluminium lamination 21,22 conductings by resin conducting portion 27, thereby can suitably prevent the charged of the 2nd aluminium lamination 22.
Fig. 5 shows the variation of X-ray image-pickup device shown in Figure 4, as shown in Figure 5, about by the consisting of of the formed conducting portion 23 of resin conducting portion 27, particularly, can use various formations.In the formation shown in Fig. 5 (a), on the side on the right side of shielding layer 20, on the side in left side, on the side of upside and on the side of downside, be respectively arranged with the resin conducting portion 27 that plays as the effect of conducting portion 23.In addition, in the formation shown in Fig. 5 (b), on above-mentioned side, be provided with to surround the integrated resin conducting portion 27 that plays as the effect of conducting portion 23 of mode of shielding layer 20.
Fig. 6 shows above (a) of formation of the 3rd embodiment of X-ray image-pickup device figure and (b) side cut away view.At this, Fig. 6 (b) shows the sectional view along the III-III line shown in Fig. 6 (a).The X-ray image-pickup device 1C of present embodiment is constituted as possesses solid-state imager 10 and shielding layer 20.About the formation of imaging apparatus 10 and the basic stepped construction of shielding layer 20, identical with X-ray image-pickup device 1A shown in Figure 2.
In the X-ray image-pickup device 1C of present embodiment, be arranged in towards the shielding layer 20 in the zone on the right of imaging apparatus 10, be provided with the order difference part (the 1st aluminium lamination exposed division) 28 that does not form ultraviolet light shielding layer 25 and the 2nd aluminium lamination 22 and expose the 1st aluminium lamination 21.And, at this order difference part 28, thereby utilize conducting metal wire 29 and be electrically connected to aluminium lamination 21,22 and consist of conducting portions 23.According to such formation, also can utilize order difference part 28 and conducting metal wire 29 and make aluminium lamination 21,22 conductings, thereby can suitably prevent the charged of the 2nd aluminium lamination 22.
Fig. 7 shows the variation of X-ray image-pickup device shown in Figure 6, as shown in Figure 7, about the formation of order difference part 28 and the conducting metal wire 29 of shielding layer 20, particularly, can use various formations.In the formation shown in Fig. 7 (a), be arranged in zone towards the right of imaging apparatus 10, towards the zone on the left side, towards the zone of top and towards the shielding layer 20 in following zone, be respectively arranged with order difference part 28, consist of conducting portion 23 thereby utilize conducting metal wire 29 to be electrically connected to aluminium lamination 21,22 in these order difference parts 28.In addition, in the formation shown in Fig. 7 (b), shielding layer 20 being arranged in above-mentioned zone is provided with to surround the integrated order difference part 28 of mode of test section 15, consists of conducting portion 23 thereby utilize conducting metal wire 29 to be electrically connected to aluminium lamination 21,22 in this order difference part 28.
Fig. 8 shows above (a) of formation of the 4th embodiment of X-ray image-pickup device figure and (b) side cut away view.At this, Fig. 8 (b) shows the sectional view along the IV-IV line shown in Fig. 8 (a).The X-ray image-pickup device 1D of present embodiment is constituted as possesses solid-state imager 10 and shielding layer 20.About the formation of imaging apparatus 10 and the basic stepped construction of shielding layer 20, identical with X-ray image-pickup device 1A shown in Figure 2.
In the X-ray image-pickup device 1D of present embodiment, be arranged in towards the shielding layer 20 in the zone on the right of imaging apparatus 10, be provided with the order difference part (the 1st aluminium lamination exposed division) 28 that does not form ultraviolet light shielding layer 25 and the 2nd aluminium lamination 22 and expose the 1st aluminium lamination 21.And, on this order difference part 28, consist of conducting portion 23 thereby utilize resin conducting portion 30 to be electrically connected to aluminium lamination 21,22.According to such formation, also can utilize order difference part 28 and resin conducting portion 30 and make aluminium lamination 21,22 conductings, thereby can suitably prevent the charged of the 2nd aluminium lamination 22.
Fig. 9 shows the variation of X-ray image-pickup device shown in Figure 8, as shown in Figure 9, about the formation of order difference part 28 and the resin conducting portion 30 of shielding layer 20, particularly, can use various formations.In the formation shown in Fig. 9 (a), be arranged in zone towards the right of imaging apparatus 10, towards the zone on the left side, towards the zone of top and towards the shielding layer 20 in following zone, be respectively arranged with order difference part 28, consist of conducting portion 23 thereby utilize resin conducting portion 30 to be electrically connected to aluminium lamination 21,22 in these order difference parts 28.In addition, in the formation shown in Fig. 9 (b), shielding layer 20 being arranged in above-mentioned zone is provided with to surround the integrated order difference part 28 of mode of test section 15, consists of conducting portion 23 thereby utilize resin conducting portion 30 to be electrically connected to aluminium lamination 21,22 in this order difference part 28.
X-ray image-pickup device of the present invention is not limited to above-mentioned embodiment and configuration example, can carry out various distortion.For example, in the above-described embodiment, as the formation of the ultraviolet light shielding layer 25 of 1 layer only is set, still, also can be used as the formation that the multilayer that comprises ultraviolet light shielding layer 25 is set between aluminium lamination 21,22 between the 1st, the 2nd aluminium lamination 21,22.In addition, in the above-described embodiment, with the outermost layer of the 2nd aluminium lamination 22 as shielding layer 20, still, also can also arrange in the outside of aluminium lamination 22 append the layer, with it as outermost layer.
In the X-ray image-pickup device of above-mentioned embodiment, use following formation, possess: the solid-state imager of (1) back surface incident type, be provided with the X ray test section of a plurality of detection pixels that are arranged with the X ray that detects incident a face side, another face becomes the X ray plane of incidence; And (2) shielding layer, be arranged on the X ray plane of incidence of solid-state imager, being used for wavelength ratio becomes covering of the long light of the X ray of detected object, (3) shielding layer have the 1st aluminium lamination that directly is arranged on the X ray plane of incidence, be arranged at the 2nd aluminium lamination on the 1st aluminium lamination and be arranged at the 1st aluminium lamination and the 2nd aluminium lamination between and be used for the ultraviolet light shielding layer that covers of ultraviolet light.
At this, about being arranged at the ultraviolet light shielding layer between the 1st, the 2nd aluminium lamination, particularly, being preferably and using the shielding layer that is consisted of by polyimide layer.According to the shielding layer of such polyimide as material, can obtain sufficient screening effect for the ultraviolet light that is incident to imaging apparatus.
In addition, in the shielding layer of above-mentioned formation, be preferably the outermost layer that the 2nd aluminium lamination becomes shielding layer.Thus, can suppress reliably the erosion etc. of the shielding layer (such as polyimide layer) that causes because of above-mentioned atom shape oxygen.
In addition, the shielding layer that is preferably for above-mentioned formation is provided with the conducting portion that is electrically connected to the 1st aluminium lamination and the 2nd aluminium lamination.Thus, can prevent from being positioned at the 2nd aluminium lamination charged in the outside, thereby imaging apparatus is stably moved.
In this case, be preferably above-mentioned conducting portion with respect to solid-state imager, be arranged at except corresponding to (breaking away from when seeing from the X ray incident direction in the zone of X ray test section) in the zone the zone of X ray test section.The reduction for the screening effect of the ultraviolet light of X ray test section that thus, can prevent from causing by form conducting portion between the 1st, the 2nd aluminium lamination.
Utilizability on industry
The present invention can be used as the detection that can suitably suppress the noise light of X ray in detecting impact X-ray image-pickup device and utilize.
Claims (7)
1. an X-ray image-pickup device, is characterized in that,
Described X-ray image-pickup device possesses:
The solid-state imager of back surface incident type is provided with the X ray test section of a plurality of detection pixels that are arranged with the X ray that detects incident a face side, another face becomes the X ray plane of incidence; And
Shielding layer is arranged on the described X ray plane of incidence of described solid-state imager, and is used for wavelength ratio and becomes covering of the long light of the X ray of detected object,
Described shielding layer has:
Directly be arranged at the 1st aluminium lamination on the described X ray plane of incidence;
Be arranged at the 2nd aluminium lamination on described the 1st aluminium lamination; And
Be arranged between described the 1st aluminium lamination and described the 2nd aluminium lamination and be used for the ultraviolet light shielding layer that covers of ultraviolet light.
2. X-ray image-pickup device as claimed in claim 1, is characterized in that,
Described ultraviolet light shielding layer is made of polyimide layer.
3. X-ray image-pickup device as claimed in claim 1 or 2, is characterized in that,
Described the 2nd aluminium lamination becomes the outermost layer of described shielding layer.
4. X-ray image-pickup device as claimed in claim 1 or 2, is characterized in that,
Be provided with the conducting portion that is electrically connected to described the 1st aluminium lamination and described the 2nd aluminium lamination.
5. X-ray image-pickup device as claimed in claim 3, is characterized in that,
Be provided with the conducting portion that is electrically connected to described the 1st aluminium lamination and described the 2nd aluminium lamination.
6. X-ray image-pickup device as claimed in claim 4, is characterized in that,
With respect to described solid-state imager, described conducting portion is arranged at except corresponding in the zone the zone of described X ray test section.
7. X-ray image-pickup device as claimed in claim 5, is characterized in that,
With respect to described solid-state imager, described conducting portion is arranged at except corresponding in the zone the zone of described X ray test section.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009-074656 | 2009-03-25 | ||
| JP2009074656A JP5118661B2 (en) | 2009-03-25 | 2009-03-25 | X-ray imaging device |
| PCT/JP2010/054682 WO2010110172A1 (en) | 2009-03-25 | 2010-03-18 | X-ray imaging device |
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| CN102282480A CN102282480A (en) | 2011-12-14 |
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| US (1) | US8575559B2 (en) |
| EP (1) | EP2413162B1 (en) |
| JP (1) | JP5118661B2 (en) |
| KR (1) | KR101627005B1 (en) |
| CN (1) | CN102282480B (en) |
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| WO (1) | WO2010110172A1 (en) |
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| EP3045897B2 (en) | 2013-10-03 | 2022-12-28 | System Square Inc. | Package inspection device |
| US10722194B2 (en) * | 2014-11-06 | 2020-07-28 | General Electric Company | X-ray detector for medical diagnosis |
| CN105700003B (en) * | 2015-05-21 | 2019-12-13 | 成都理工大学 | Semiconductor refrigeration X-ray silicon pin detector |
| KR101815279B1 (en) | 2016-08-29 | 2018-01-04 | 주식회사 디알텍 | Radiation detector and method for fabricating thereof |
| US10206637B2 (en) | 2017-01-09 | 2019-02-19 | Massachusetts Institute Of Technology | Integrated optical blocking filter for compact X-ray imaging detector |
| CN111373288A (en) * | 2017-12-15 | 2020-07-03 | 株式会社堀场制作所 | Silicon drift type radiation detection element, silicon drift type radiation detector, and radiation detection device |
| US11579319B2 (en) * | 2019-12-02 | 2023-02-14 | X Development Llc | Nuclear radiation detection |
| CN110911501A (en) * | 2019-12-04 | 2020-03-24 | 中国工程物理研究院材料研究所 | Detection device |
| CN111473792B (en) * | 2020-05-19 | 2021-11-02 | 中国科学院微电子研究所 | Pulsar X-ray detection device |
| CN112378932B (en) * | 2020-10-27 | 2023-06-30 | 国网辽宁省电力有限公司丹东供电公司 | X-ray digital imaging DR electrified detection equipment with shielding device |
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| KR20110139186A (en) | 2011-12-28 |
| EP2413162A4 (en) | 2017-06-21 |
| CN102282480A (en) | 2011-12-14 |
| TW201118409A (en) | 2011-06-01 |
| JP2010223922A (en) | 2010-10-07 |
| EP2413162B1 (en) | 2018-05-30 |
| US20120025089A1 (en) | 2012-02-02 |
| KR101627005B1 (en) | 2016-06-03 |
| US8575559B2 (en) | 2013-11-05 |
| WO2010110172A1 (en) | 2010-09-30 |
| JP5118661B2 (en) | 2013-01-16 |
| EP2413162A1 (en) | 2012-02-01 |
| TWI459931B (en) | 2014-11-11 |
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