CN110911501A - Detection device - Google Patents
Detection device Download PDFInfo
- Publication number
- CN110911501A CN110911501A CN201911230641.5A CN201911230641A CN110911501A CN 110911501 A CN110911501 A CN 110911501A CN 201911230641 A CN201911230641 A CN 201911230641A CN 110911501 A CN110911501 A CN 110911501A
- Authority
- CN
- China
- Prior art keywords
- metal layer
- detection
- chip
- probe
- detection chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 142
- 229910052751 metal Inorganic materials 0.000 claims abstract description 137
- 239000002184 metal Substances 0.000 claims abstract description 136
- 239000010410 layer Substances 0.000 claims description 115
- 239000011241 protective layer Substances 0.000 claims description 31
- 230000005855 radiation Effects 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 28
- 229910052790 beryllium Inorganic materials 0.000 claims description 17
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 238000001704 evaporation Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 9
- 239000000523 sample Substances 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- -1 polyethylene terephthalate Polymers 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 239000011651 chromium Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 5
- 238000002207 thermal evaporation Methods 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 4
- 229920000515 polycarbonate Polymers 0.000 claims description 4
- 239000004417 polycarbonate Substances 0.000 claims description 4
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims 1
- 238000001723 curing Methods 0.000 description 13
- 238000010521 absorption reaction Methods 0.000 description 11
- 230000009471 action Effects 0.000 description 7
- 230000004224 protection Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 150000002894 organic compounds Chemical class 0.000 description 4
- 230000002035 prolonged effect Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- 239000005416 organic matter Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 230000006750 UV protection Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000000502 dialysis Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 241001391944 Commicarpus scandens Species 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004581 coalescence Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000035772 mutation Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Measurement Of Radiation (AREA)
Abstract
The application provides a detection device, includes: the detection chip comprises a detection chip and a metal layer, wherein the metal layer covers the surface of a detection area of the detection chip, the atomic number of the metal layer is within a preset atomic number range, and the metal layer is used for providing a window for rays to enter the detection area and protecting the detection chip. The metal layer is arranged on the detection area of the detection chip in a covering mode to provide a window, and the metal layer with a specific atomic number can prevent the window from being broken while protecting the detection area of the detection chip.
Description
Technical Field
The application relates to the field of detection equipment, in particular to a detection device.
Background
A thin beryllium layer is adopted as a window material at the front end of the silicon radiation detector and is packaged in vacuum, so that the silicon radiation detector has the functions of protecting a detector chip and reducing the loss of air to X-rays. Meanwhile, the beryllium window can also play a role in shielding and filtering visible light, and the interference of low-energy rays on detector signals is reduced. For an X-ray detector, the thinner the beryllium window is, the better the beryllium window is, so that the absorption of X-rays by the beryllium window can be reduced as much as possible.
The existing beryllium window is welded on a detector shell through the edge, is not in contact with a detector chip, and is internally vacuumized, so that the probability of breakage of the window structure under the influence of vibration is higher due to the vacuum structure of the beryllium window.
Disclosure of Invention
An object of the present invention is to provide a detecting device, so as to improve the problem that the window of the existing detector is easy to break.
In a first aspect, an embodiment provides a detection apparatus, including: the detection chip comprises a detection chip and a metal layer, wherein the metal layer covers the surface of a detection area of the detection chip, the atomic number of the metal layer is within a preset atomic number range, and the metal layer is used for providing a window for rays to enter the detection area and protecting the detection chip.
The embodiment of the application provides the ray window on the detection region of the detection chip by arranging the metal layer in a covering mode, and the metal layer with a specific atomic number can shield light rays in a test environment while protecting the detection region of the detection chip, so that the problem of window breakage is avoided.
In an alternative embodiment, the metal layer is obtained by coating a film on the surface of the detection area of the detection chip by evaporation or sputtering.
The embodiment of the application utilizes the mode of evaporation or sputtering to carry out metal coating on the detection zone surface of detecting the chip to make metal form the metal layer on the detection zone surface, when guaranteeing that the thickness of metal layer accords with the demand that the detection chip surveyed, still avoid the metal layer to break and lead to the too much condition of noise of the ray that the detection chip detected to appear.
In an alternative embodiment, the evaporation method includes a thermal evaporation method or an electron beam evaporation method, and the sputtering method includes an ion beam sputtering method or a magnetron sputtering method.
The embodiment of the application can be specifically through thermal evaporation mode, electron beam evaporation mode, ion beam spraying or magnetron sputtering mode with metal deposition on detecting region surface, when guaranteeing that the thickness of metal level accords with the demand that the detection chip surveyed, still avoid the metal level to break and lead to the too much condition of noise of the ray that the detection chip detected to appear.
In an alternative embodiment, the thickness of the metal layer is determined according to the material of the metal layer and the energy of the radiation to enter the detection region.
The thickness of the metal layer is set to be proper based on the material of the metal layer and the ray energy of the ray to be detected, so that the problems that the ray is over-absorbed and the ray in the test environment is shielded, and the ray is inaccurate in subsequent analysis are caused are solved.
In an alternative embodiment, an organic protective layer covers the surface of the metal layer away from the detection chip.
According to the embodiment of the application, the organic protective layer is arranged on the surface of the metal layer, so that the chemical composition of the metal layer is prevented from changing, and meanwhile, a certain shielding and filtering effect on rays can be achieved to prevent moisture from interfering the chip; meanwhile, the probe can be matched with a metal layer to protect a detection area.
In an alternative embodiment, the organic protective layer is prepared on the surface of the metal layer by sol curing, spray curing or print curing.
According to the embodiment of the application, the organic matter is covered on the surface of the metal layer in a sol curing, spraying curing or printing curing mode to obtain the organic protective layer, so that the situation that rays cannot penetrate through the window due to the fact that the thickness of the organic protective layer is too thick is prevented.
In an alternative embodiment, the material of the organic protective layer is polyimide, polyethylene terephthalate, polyethylene naphthalate, or polycarbonate.
According to the embodiment of the application, the organic protective layer is prepared by utilizing materials such as polyimide, polyethylene terephthalate, polyethylene naphthalate or polycarbonate, so that the abrasion resistance of the organic protective layer is further ensured when the organic protective layer is attached to the metal layer more properly, and the service life of the detection device is prolonged.
In an optional embodiment, the thickness of the organic protective layer is 1 to 10 micrometers.
According to the embodiment of the application, the thickness of the organic protective layer is set to be moderate, interference rays can be filtered, meanwhile, target rays can be effectively obtained, and the filtering accuracy is improved.
In an alternative embodiment, the material of the metal layer is any one of beryllium, aluminum, gold, silver, copper, zinc or chromium, or a combination of multiple materials.
The embodiment of the application prepares the metal layer by adopting beryllium, aluminum, gold, silver, copper, zinc or chromium, so that the possibility of cracking of the metal layer is reduced while the effect of shielding interference rays is ensured, and the normal work of the detection device is ensured.
In an alternative embodiment, a semiconductor detection medium is disposed in the detection region of the detection chip, the semiconductor detection medium is made of silicon, and the semiconductor detection medium is configured to convert the received radiation into an electrical signal.
According to the embodiment of the application, the semiconductor medium silicon is arranged in the detection area of the detection chip, so that the received rays can be converted into electric signals for subsequent analysis.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and that those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
Fig. 1 is a schematic cross-sectional view of a detection apparatus according to an embodiment of the present disclosure;
fig. 2 is a schematic cross-sectional view of another detection apparatus provided in the embodiment of the present application;
fig. 3 is a schematic perspective view of a detection apparatus according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram illustrating an energy variation of a detected radiation according to an embodiment of the present disclosure;
fig. 5 is a schematic diagram of energy variation of another detected ray provided in the embodiment of the present application.
Icon: 1-an organic protective layer; 2-a metal layer; 3-detecting the chip; 31-a detection zone; 10-detection means.
Detailed Description
The technical solutions in the embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application.
For a detection window in a conventional detector, a beryllium sheet is usually used as a window material, the beryllium window can be arranged on a housing of the detector by welding the edge of the beryllium window, and meanwhile, a vacuum can be pumped between the window and the detector to reduce the loss effect of air on rays. However, as the detection area in the detector increases, the pressure difference between the atmosphere and the vacuum also increases, so that the beryllium window with a large area is easy to be vibrated to break, and the detector cannot work normally.
Fig. 1 is a schematic cross-sectional view of a detection apparatus 10 according to an embodiment of the present application, where the detection apparatus 10 includes: the detection chip comprises a detection chip 3 and a metal layer 2, wherein the metal layer 2 covers the surface of a detection area 31 of the detection chip 3, the atomic number of the metal layer 2 is within a preset atomic number range, and the metal layer 2 is used for providing rays to enter a window of the detection area 31, blocking the rays in a test environment from entering the window and protecting the detection chip 3.
The detection chip 3 is configured to receive radiation through a detection area 31 disposed on the detection chip 3 and convert the radiation into an electrical signal, so as to analyze and process the electrical signal. This application embodiment is through the metal of chooseing for use atomic number at the atomic number within range of predetermineeing, forms metal layer 2 with this metal cover on the surface of detecting the detection zone 31 of detecting chip 3 for metal layer 2 sets up with the laminating of the detection zone 31 of detecting chip 3, in order to avoid the air to the loss of ray. Meanwhile, compared with a vacuum device between a traditional beryllium window and a detector, the vacuum device can avoid the pressure difference between the atmosphere and the vacuum to exert the pressure on the metal layer 2, and can effectively avoid the rupture of the metal layer 2.
Moreover, since the atomic number of the material of the metal layer 2 is within the preset atomic range, the material of the metal layer 2 is inactive in chemical property, so that the metal layer 2 has higher stability, and the metal layer 2 in the embodiment of the present application is more stable under the condition that the area of the detection region 31 is larger. The predetermined atomic number range may be used to determine the material of the metal layer 2, for example, the predetermined atomic number range of the material of the metal layer 2 may be 13 to 79, and may also be 28 to 46. The specific preset atomic number range is not limited, and can be adjusted according to the stability of the metal layer 2 required in practice.
It can also be stated that the metal layer 2 has many functions, and the metal layer 2 can be connected with the electrodes of the detection chip 3 to lead out the electrical signals. The window provided by the metal layer 2 can reduce the absorption of the detection chip 3 to the radiation, and can also block the light in the test environment from entering the window. Furthermore, the metal layer 2 can also reduce the interference of the optical signal to the radiation, and can also protect the detection area 31 of the detection chip 3.
From this, metal level 2 and the laminating setting of detecting chip 3 that provides through this application embodiment for the window that metal level 2 formed can play the shielding filter effect to visible light, reduces the interference of certain low energy radiation to the detector signal. Meanwhile, the metal layer 2 can protect the detection area 31 of the detection chip 3 according to the hardness of the metal layer, so that the service life of the detection chip 3 is prolonged.
It should be noted that the material of the metal layer 2 may be any one of beryllium, aluminum, gold, silver, copper, zinc or chromium, or a combination of a plurality of these materials. The material atomic number of the metal layer 2 is high, and the metal layer 2 in the embodiment of the application can achieve a good shielding effect on rays. Meanwhile, the metal layer 2 may be a metal composite layer formed by combining the above metals. The specific material of the metal layer 2 is not limited, and can be adjusted according to the actual detection function requirement.
As an embodiment of the present application, the metal layer 2 is obtained by coating a film on the surface of the detection region 31 of the detection chip 3 by evaporation or sputtering.
It should be noted that the evaporation coating is often called vacuum coating, and is to evaporate metal and condense the metal on the surface of the detection region 31 to form a film, and then form a film with strong adhesion on the surface of the detection region 31 after high temperature heat treatment, which is the metal layer 2. Meanwhile, the operation is carried out under the vacuum condition in the process of evaporation coating, so that the influence on the components and properties of the film due to the residue of gas is avoided. Therefore, the metal is coated on the surface of the detection area 31 of the detection chip 3 in an evaporation mode, so that firm attachment of the metal layer 2 and the surface of the detection area 31 can be ensured, and radiation obtained by loss detection due to air generated in the coating process is avoided.
The evaporation mode comprises a thermal evaporation mode or an electron beam evaporation mode, and the principle of the thermal evaporation mode or the electron beam evaporation mode is that metal is heated by current or electron beams, so that the metal is melted to generate steam atoms; as the gaseous metal atoms continue to diffuse to form non-uniform nucleation during the residence time of the surface, as the vapor atoms continue to impact the surface, the nuclei grow and adjacent nuclei begin to contact into the coalescence stage until a continuous film is formed.
And the sputtering coating is to generate gas ionization by gas discharge, and positive ions of the gas ionization bombard the cathode metal target body at high speed under the action of an electric field to hit out atoms or molecules of the cathode metal target body, and the atoms or molecules fly to the surface of the coated substrate to be deposited into a thin film. Therefore, the surface of the detection area 31 of the detection chip 3 can be quickly and efficiently coated in a sputtering coating mode, and the metal layer 2 is firmly attached to the surface of the detection area 31.
Wherein the sputtering mode comprises an ion beam spraying mode or a magnetron sputtering mode. In the magnetron sputtering, a runway magnetic field is established on a cathode target surface, secondary electrons are controlled to move by using the runway magnetic field, the stay of the secondary electrons near the metal target surface is prolonged, and the collision probability with gas is increased, so that the plasma density is improved. Therefore, the sputtering rate of the metal target can be greatly improved, and the deposition rate of the metal is finally improved.
Therefore, the metal is plated on the surface of the detection area 31 of the detection chip 3 in an evaporation or sputtering mode, so that the metal layer 2 with high quality can be quickly obtained while the thickness of the metal layer 2 is ensured to meet the detection requirement of the detection chip 3, and the phenomenon that the radiation detected by the detection chip 3 is too much in noise due to the breakage of the metal layer 2 is avoided.
As an embodiment mode of the present application, the thickness of the metal layer 2 is determined according to the material of the metal layer 2 and the energy of the radiation to enter the detection region 31.
The radiation is shielded to a different extent due to the different thickness of the metal layer 2 and is absorbed to a different extent due to the different material of the metal layer 2. Therefore, when the metal layer 2 is disposed outside the detection region 31 of the detection chip 3, the material of the metal layer 2 and the energy of the radiation to be detected by the chip to be detected, that is, the energy of the radiation to enter the detection region 31 need to be considered. Generally, as the atomic number of the metal layer increases, the absorption capacity of the metal layer for radiation increases. Meanwhile, different metal elements have different absorption limits, and rays just larger than the absorption limits can be absorbed in a large amount to generate absorption mutation. Therefore, for rays with different energies, the atomic number of the metal layer is selected to avoid the large absorption of the rays by the absorption limit, and the appropriate thickness is calculated according to the attenuation coefficient of the rays by the metal layer. Therefore, the obtained thickness of the metal layer 2 can be more suitable for detecting rays, over-absorption of the rays is avoided, and meanwhile, the accuracy of subsequent ray analysis can be improved.
For example, when the radiation to enter the detection region 31 is X-ray and the material of the metal layer 2 is beryllium, aluminum, gold, silver, copper, zinc or chromium, the thickness of the corresponding metal layer 2 may be between 0.2 and 1 μm.
It should be noted that the energy of the radiation may be obtained by looking up a table or looking up historical data, or the metal layer 2 may be reasonably designed according to the parameters of the detection chip 3 in the present application. The method for acquiring the energy of the ray is not limited, and can be adjusted according to actual requirements.
Fig. 2 is a schematic cross-sectional view of another detection apparatus 10 provided in this embodiment, and fig. 3 is a schematic perspective view of the detection apparatus 10 provided in this embodiment, and as an embodiment of this application, an organic protection layer 1 covers a surface of the metal layer 2 away from the detection chip 3.
Because the detection device 10 may be in a relatively humid or dusty environment for detection, the material of the metal layer 2 may undergo a chemical reaction under the action of water or dust, so that the metal layer 2 is deteriorated, and cannot play a role in filtering interfering rays, so that the quality of rays obtained by the detector is poor, and the subsequent analysis of the rays is affected. This application embodiment can cover metal level 2 through setting up organic protective layer 1, utilize organic protective layer 1's chemical stability, prevent that metal level 2 from taking place the chemical reaction change under the condition that external environment changed, guarantee the quality of the ray of acquireing.
Meanwhile, the organic matter covers the surface of the metal layer 2 to form an organic layer, so that the stability of the metal layer 2 can be further improved, the metal layer 2 is prevented from cracking, and the organic protective layer 1 also has the heat resistance, ultraviolet resistance and other properties, so that the aging of the metal layer 2 in the using process can be slowed down to a certain extent, and the service life of the detection chip 3 is prolonged.
On the basis of the above embodiment, the organic protection layer 1 is prepared on the surface of the metal layer 2 by sol curing, spray curing or print curing.
It is worth to be noted that the sol curing preparation method is equivalent to curing an organic compound with a high chemical activity component on the metal layer 2 through solution, sol and gel, so that the organic protective layer 1 can be attached to the metal layer 2 for arrangement, and the metal layer 2 is protected more comprehensively.
Among them, the sols prepared by various methods contain certain impurities of electrolyte molecules or ions, and if they are directly cured, the stability of the organic protective layer 1 is affected. Therefore, the organic compound sol can be purified by a dialysis method or a dialysis method.
It can be said that the organic protective layer 1 is prepared by spray curing, and a solution of an organic compound is dispersed into uniform and fine droplets by a spray gun or a disc atomizer with the aid of pressure or centrifugal force, and applied to the surface of the metal layer 2 to be cured. The organic protective layer 1 prepared by the method can be more uniformly covered on the surface of the metal layer 2, and the metal layer 2 can be more uniformly protected.
It can also be stated that, for printing curing, the organic matter can be cured by thermal curing or irradiation with ultraviolet light or electron beams, and the organic protective layer 1 prepared thereby has a certain radiation resistance, which can further prolong the service life of the organic protective layer 1.
As an embodiment of the present application, the material of the organic protective layer 1 is polyimide, polyethylene terephthalate, polyethylene naphthalate, or polycarbonate.
This application embodiment sets up the material through organic protective layer 1 into the organic compound that has higher physical mechanical properties, gas barrier property, chemical stability and heat-resisting, ultraviolet resistance performance for organic protective layer 1 can effectual protection metal layer 2 and the stability of detecting the regional 31 chemical properties of detection of chip 3, extension detection device 10's life.
It should be further noted that the thickness of the organic protection layer 1 may be set to 1 to 10 micrometers, or may be set to 5 to 20 micrometers, and the specific thickness of the organic protection layer 1 is not limited, and may be adjusted according to the material of the organic protection layer 1.
On the basis of any of the above embodiments, the detection region 31 of the detection chip 3 is provided with a semiconductor detection medium, the material of the semiconductor detection medium may be silicon, silicon carbide, cadmium telluride, cadmium zinc telluride, or perovskite single crystal, and the semiconductor detection medium is used for converting the received radiation into an electrical signal.
It is worth mentioning that the radiation can be incident on the detection area 31 of the detection chip 3 through the organic protective layer 1 and the metal layer 2. The semiconductor detection medium in the detection region 31 generates electron-hole pairs under the action of rays, electrons and holes are respectively collected under the action of the upper pole and the lower pole of the detection chip 3 to form charge signals, namely, the rays are converted into electric signals, and the electric signals can be analyzed subsequently to determine the properties of the detected rays.
It should be noted that the radiation may be filtered out of a part of the interfering radiation when passing through the organic protective layer 1 and the metal layer 2, so as to ensure that the radiation detected by the detection chip 3 has a high quality. Meanwhile, some of the rays are absorbed, reflected and refracted by the organic protective layer 1 and the metal layer 2, resulting in energy loss.
FIG. 4 is a schematic diagram illustrating an energy variation of a detected radiation according to an embodiment of the present disclosure; fig. 5 is a schematic diagram illustrating an energy variation of a detected ray according to an embodiment of the present application. The radiation loss is simulated and calculated by using the most common 8keV light source in the X-ray diffractometer, the ray obtained by using the traditional detector is shown in fig. 4, the ray obtained by using the detector provided by the application is shown in fig. 5, it can be obviously seen that the absorption of the 100-micron beryllium window to the 8keV X-ray is 1.72%, and the absorption of the 0.5-1 micron aluminum metal layer 2 to the 8keV X-ray is less than 1.25%. Therefore, compared with the most common metal window packaging mode of the X-ray detector in the existing instrument, the loss of the X-ray by the design that the detector adopts the metal layer 2 as the window is lower.
In summary, the embodiment of the present application provides a detection apparatus 10, including: the detection chip comprises a detection chip 3 and a metal layer 2, wherein the metal layer 2 covers the surface of a detection area 31 of the detection chip 3, the atomic number of the metal layer 2 is within a preset atomic number range, and the metal layer 2 is used for providing rays to enter a window of the detection area 31 and protecting the detection chip 3. In the embodiment of the application, the metal layer 2 is arranged on the detection area 31 of the detection chip 3 in a covering manner to provide a window, and the metal layer 2 with a specific atomic number can prevent the window from being broken while protecting the detection area 31 of the detection chip 3.
In the embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in other ways. The above-described embodiments of the apparatus are merely illustrative, and for example, the division of the units is only one logical division, and there may be other divisions when actually implemented, and for example, a plurality of units or components may be combined or integrated into another system, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection of devices or units through some communication interfaces, and may be in an electrical, mechanical or other form.
In addition, units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of network units. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
In this document, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A probe apparatus, comprising:
the detection chip comprises a detection chip and a metal layer, wherein the metal layer covers the surface of a detection area of the detection chip, the atomic number of the metal layer is within a preset atomic number range, and the metal layer is used for providing a window for rays to enter the detection area and protecting the detection chip.
2. The probe apparatus according to claim 1, wherein the metal layer is formed by coating a surface of the probe region of the probe chip by evaporation or sputtering.
3. The apparatus of claim 2, wherein the evaporation method comprises a thermal evaporation method or an electron beam evaporation method, and the sputtering method comprises an ion beam sputtering method or a magnetron sputtering method.
4. A detection apparatus according to claim 1, wherein the thickness of the metal layer is determined in dependence on the material of the metal layer and the energy of the radiation to be passed into the detection zone.
5. The probe apparatus of claim 1, wherein a surface of the metal layer away from the probe chip is covered with an organic protective layer.
6. The detection device according to claim 5, wherein the organic protective layer is prepared on the surface of the metal layer by sol curing, spray curing or print curing.
7. A probe device according to claim 5 wherein the material of the organic protective layer is polyimide, polyethylene terephthalate, polyethylene naphthalate or polycarbonate.
8. The detecting device according to claim 5, wherein the thickness of the organic protective layer is 1 to 10 μm.
9. A probe device according to any one of claims 1 to 8 wherein the material of the metallic layer is any one of beryllium, aluminium, gold, silver, copper, zinc or chromium, or a combination of these.
10. The detection device according to any one of claims 1 to 8, wherein a semiconductor detection medium is arranged in the detection region of the detection chip, the semiconductor detection medium is made of silicon, and the semiconductor detection medium is used for converting the received radiation into an electric signal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911230641.5A CN110911501A (en) | 2019-12-04 | 2019-12-04 | Detection device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911230641.5A CN110911501A (en) | 2019-12-04 | 2019-12-04 | Detection device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110911501A true CN110911501A (en) | 2020-03-24 |
Family
ID=69822427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911230641.5A Pending CN110911501A (en) | 2019-12-04 | 2019-12-04 | Detection device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110911501A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113484895A (en) * | 2021-05-25 | 2021-10-08 | 中国工程物理研究院材料研究所 | Alpha surface pollution detector and detection method for high radon background |
| CN113804984A (en) * | 2021-08-17 | 2021-12-17 | 南昌大学 | Space environment sensing method based on satellite-borne low-frequency antenna |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101401208A (en) * | 2006-03-15 | 2009-04-01 | 皇家飞利浦电子股份有限公司 | Semiconductor device for radiation detection |
| US20100128845A1 (en) * | 2007-04-26 | 2010-05-27 | Toshiyoshi Yamamoto | X-ray imaging device and x-ray radiographic apparatus |
| CN102282480A (en) * | 2009-03-25 | 2011-12-14 | 浜松光子学株式会社 | X-ray imaging device |
-
2019
- 2019-12-04 CN CN201911230641.5A patent/CN110911501A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101401208A (en) * | 2006-03-15 | 2009-04-01 | 皇家飞利浦电子股份有限公司 | Semiconductor device for radiation detection |
| US20100128845A1 (en) * | 2007-04-26 | 2010-05-27 | Toshiyoshi Yamamoto | X-ray imaging device and x-ray radiographic apparatus |
| CN102282480A (en) * | 2009-03-25 | 2011-12-14 | 浜松光子学株式会社 | X-ray imaging device |
Non-Patent Citations (1)
| Title |
|---|
| 冯龄: "X射线探测器系统的设计与实现", 《中国优秀硕士学位论文全文数据库（电子期刊）工程科技Ⅱ辑》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113484895A (en) * | 2021-05-25 | 2021-10-08 | 中国工程物理研究院材料研究所 | Alpha surface pollution detector and detection method for high radon background |
| CN113484895B (en) * | 2021-05-25 | 2023-07-28 | 中国工程物理研究院材料研究所 | Alpha surface pollution detector and detection method for high radon background |
| CN113804984A (en) * | 2021-08-17 | 2021-12-17 | 南昌大学 | Space environment sensing method based on satellite-borne low-frequency antenna |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Powell et al. | Origin of the characteristic electron energy losses in aluminum | |
| CN110911501A (en) | Detection device | |
| US7664230B2 (en) | X-ray tubes | |
| Piuz | CsI-photocathode and RICH detector | |
| KR20020035111A (en) | X-ray anode and method for the production thereof | |
| US4214159A (en) | Apparatus for analyzing samples by electromagnetic irradiation | |
| Endstrasser et al. | Comparative study of the dust particle population sampled during four consecutive campaigns in full-tungsten ASDEX Upgrade | |
| CN110574138B (en) | Vapor monitoring | |
| JPWO2019058784A1 (en) | Laser desorption ionization method and mass spectrometry method | |
| JPH0524612B2 (en) | ||
| AU2012203317B2 (en) | X-Ray tube and x-ray fluorescence analyser utilizing selective excitation radiation | |
| US8437451B2 (en) | X-ray shutter arrangement | |
| JPS59225326A (en) | Ionization vacuum gage | |
| US5321272A (en) | X-ray beam stop | |
| CN112859146A (en) | X-ray energy spectrum combined measurement spectrometer and implementation method thereof | |
| JPH05182625A (en) | Objective lens | |
| DE4230047C1 (en) | Rotating anode X=ray tube for eg for medical computer tomography - has aperture plate stop in path of electron beam between cathode and anode coated with material having low atomic number. | |
| EP0240053A1 (en) | Radiation conversion screen | |
| Van Leerdam et al. | Shielding effects in oxides studied by low-energy ion scattering | |
| Primetzhofer et al. | Influence of surface structure and composition on neutralization of H 4 e+ ions scattered from noble metals and alloy surfaces | |
| JPWO2019058786A1 (en) | Sample support | |
| Bayly et al. | A mass and energy spectrometer for secondary ion analysis | |
| US4283632A (en) | Electron beam aperture device | |
| Potts et al. | Energy dispersive X-ray spectrometry | |
| JP4671153B2 (en) | Open window ionization chamber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20211123 Address after: 621700 Huafeng new village, Jiangyou City, Mianyang, Sichuan Province, No. 9 Applicant after: INSTITUTE OF MATERIALS, CHINA ACADEMY OF ENGINEERING PHYSICS Applicant after: SICHUAN YIJING TECHNOLOGY GROUP Co.,Ltd. Address before: 621000 No.9, Huafeng new village, Jiangyou City, Mianyang City, Sichuan Province Applicant before: INSTITUTE OF MATERIALS, CHINA ACADEMY OF ENGINEERING PHYSICS |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200324 |