CN102281974A - 形成多晶金刚石切割元件的方法,所形成的切割元件和所装备的钻头 - Google Patents
形成多晶金刚石切割元件的方法,所形成的切割元件和所装备的钻头 Download PDFInfo
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Abstract
在高压高温工艺中使用催化剂形成包含金刚石台的多晶金刚石复合片,将催化剂从全部的金刚石台上基本移除,并且在后来的高压高温工艺中采用至少部分不同于催化剂材料的粘结剂材料将金刚石台附着到支持基材。允许粘结剂材料从与基材的界面通过金刚石台基本完全渗透到和包括切割表面,并且通过常规技术(例如酸浸取)将粘结剂材料选择性地从金刚石台的一个或多个区域移除。还公开了如此形成的切割元件和装备有这样的切割元件的钻头。
Description
优选权要求
本申请要求2009年1月16号提交的“METHODS OF FORMINGPOLYCRYSTALLINE DIAMOND CUTTING ELEMENTS,CUTTING ELEMENTS SOFORMED AND DRILL BITS SO EQUIPPED”的美国临时专利申请序列号61/145,155的提交日权益。
技术领域
本发明的实施方案涉及形成具有至少一部分金刚石台(table)、基本上不含催化材料的多晶金刚石切割元件的方法,并且涉及如此形成的切割元件。
背景技术
多晶金刚石复合片(PDC)结构形式的超级磨料切割元件已在商业上可获得将近四十年,并且在支持基材的末端上形成有多晶金刚石台的PDC切割元件已在商业上可获得超过二十年的时间。后一类型的PDC切割元件通常包含薄的、基本上圆形的盘(尽管其它形状也是可获得的),通常称之为“台”,其包含在超高温度和压力下相互结合的金刚石晶体形成的超级磨料材料层,并且确定基本上为平坦的前切割面、背面和外围或圆周边缘,其至少一部分被用作切割刃来切割地下岩层,该地下岩层由在其上安装有PDC切割元件的钻头所钻进。尽管也已知自支持的PDC切割元件,特别是在较高温度下稳定的被称为“热稳定多晶金刚石或TSP”的那些,但在超级磨料台到背衬层或由碳化钨形成的基材的形成期间,PDC切割元件通常在它们的背面上结合。这样的切割元件广泛用于旋转固定切割机,或“刮刀”、钻头以及用于钻进和铰除地下岩层的其它钻头和工具,这样的其它钻头和工具包括但不限于取芯钻头、双心钻头、偏心钻头、混合体(hybrid)(例如轧制部件与固定切割元件相结合)、牙轮钻头、铰刀翼(reamer wing)、可膨胀铰刀和套管铣磨工具(casing milling tool)。作为在本文中使用的,术语“钻头”包含所有前述和等价的结构。
在任何一种切割元件的形成中,通常采用催化剂来促进金刚石晶体的金刚石与金刚石结合。遗憾的是,金刚石台中催化剂的存在可导致因金刚石和催化剂的热膨胀系数(CTE)差异所致的在约400℃开始的热劣化,并且可导致因催化剂促进金刚石到碳的后石墨化所致的在约700-750℃开始的热劣化。尽管钻进泥浆作为冷却剂使用,并且尽管相对快速的热量传递到金刚石台、基材和在其上安装有切割元件的钻头体,但在岩层的钻进期间这样的温度可通过PDC切割元件的切割刃而达到。
已经在现有技术中认识到:从金刚石台的切割表面,特别是从在其切割刃和沿着邻接着其切割刃的金刚石台的侧面并延伸向基材移除在金刚石台的原始合成加工中使用的催化剂,减少了这些部分的金刚石台因热效应劣化的趋势。因此,如果催化剂移除的深度是充足的,金刚石台的寿命得以延长。对前述的热劣化效应和如何并且从金刚石台的什么部分可有益地有移除催化剂的认识公开在很多其它的文件中:日本专利JP59-219500以及美国专利4,224,380、5,127,923、6,544,308和6,601,662,美国专利公开号2006/0060390、2006/0060391、2006/0060392、2006/0086540、2008/0223623、2009/0152018和PCT国际公开号WO2004/106003、WO2004/106004和WO2005/110648。
发明内容
本发明的实施方案涉及形成多晶金刚石元件例如适用于地下钻进,展现改善热稳定性的切割元件的方法,并且涉及所得的切割元件。
在本发明的一个实施方案中,包含金刚石台的多晶金刚石复合片在高压高温工艺中使用催化剂形成,并且随后将催化剂从全部的金刚石台基本移除。随后,在后来的高压高温工艺中采用至少部分不同于催化剂材料的粘接剂材料将金刚石台附着到支持基材。随后的高温高压工艺可在与用于形成金刚石台相当的压力下进行,或可在更高或更低的压力下进行。也可分别采用不同的温度,以形成金刚石台以及在将金刚石台附着到支持基材期间。
在一个特别的实施方案中,允许粘结剂材料从与基材的界面通过金刚石台基本完全渗透到金刚石台的切割表面和侧面,通过常规技术将粘结剂材料选择性地从金刚石台的一个或多个所需的区域移除。
根据本发明方法的实施方案形成的切割元件和展现的结构也得到公开,并且包括在本发明的范围之内。
采用根据本发明的实施方案形成的切割元件和展现的结构的钻头也得到公开,并且包括在本发明的范围之内。
通过考虑随后的描述、附图和附属的权利要求,本发明的其它特征和优点对于本领域技术人员将变得明了。
附图说明
图1是根据本发明形成多晶金刚石复合片切割元件的方法的一个实施方案的流程图;
图2A-2D描绘了根据图1的实施方案的多晶金刚石复合片切割元件的形成
图3描绘了安装有根据本发明实施方案的切割元件的旋转刮刀钻头的一个实施例。
具体实施方式
在图1中说明了本发明方法的一个实施方案的工艺流程,而在图2A-2D中说明了在工艺中形成的相关结构。参考前述附图,在步骤100中,在高压高温工艺中在催化剂204存在下由大量的金刚石颗粒(例如磨粒)形成了以金刚石台202形式的多晶金刚石复合片200(图2A)。在本文中使用的术语金刚石“颗粒”或金刚石“磨粒”每个不仅包括金刚石的单个颗粒,而且包括在其间具有金刚石和金刚石结合的单个金刚石颗粒的集合体。可在烧结碳化钨或现有技术中已知的其它合适材料的支持基材206(如所示)上以在美国专利3,745,623中描述类型的常规工艺(作为一个非限制性实施例)来形成金刚石台202,或者以在美国专利5,127,923中描述的类似常规工艺(作为一个非限制性实施例)以独立式的多晶金刚石复合片(例如没有支持基材)的形式形成金刚石台202。金刚石磨粒可包含天然金刚石、合成金刚石或其混合物,并且可包含不同尺寸的金刚石磨粒或不同晶粒尺寸或不同的平均晶粒尺寸的层状金刚石磨粒或其它特定区域,并且金刚石台或者其一个或多个区域可包含不同晶粒尺寸的梯度。可在支持基材206中提供催化剂(如果采用的话),或可将其与金刚石磨粒混合。如下所述将会被移除的支持基材206可为薄的,处于几个毫米的数量级,从而允许在给定的金刚石压制单元体积(press cell volume)中同时加工相对更多的金刚石台202。在步骤102中,通过从金刚石台202浸取支持基材206的材料来从金刚石台202移除支持基材206(如果存在),同时从金刚石台202同时地基本移除催化剂204。特别地,如现有技术已知和在前述的美国专利5,127,923和在美国专利4,224,380中更全面描述的那样,可使用王水(浓硝酸(HNO3)和浓盐酸(HCl)的混合物)溶解至少一部分支持基材(如果存在),从而在金刚石台的金刚石晶体之间的晶格间隙和从晶体表面基本移除催化剂204,并从而在基材206和金刚石台202之间的界面处溶解催化性粘结剂材料,从而导致其间的分离。还已知采用沸腾的盐酸(HCl)和沸腾的氢氟酸(HF),以及不同比例的HF和HNO3的混合物。现有技术中还已知用于催化剂移除的其它技术。
在其它的实施方案中,可在从金刚石台202的金刚石晶体之间的间隙空位移除催化剂204之前,从金刚石台202移除基材206,或可在从金刚石台202的金刚石晶体之间的间隙空位移除催化剂204之后,从金刚石台202移除基材206。此外,可采用除了酸浸取以外的方法从金刚石台204移除基材206。这样的方法可包括例如研磨、切割和激光消融中的一种或多种。
所得的结构(图2B)是基本上没有催化剂204存在的金刚石台202’。在本文中使用的具有“基本上没有催化剂”或是“基本上不含催化剂”的金刚石台或多晶金刚石复合片不需要完全移除催化剂,因为一些残余的催化剂可存在于金刚石磨粒颗粒的表面上,以及在颗粒之间的一些基本封闭的空位中,在这些空位中浸取剂没有完全渗透。在步骤104中,在另外的常规高温高压工艺中于至少部分不同于催化剂204材料的粘结剂材料的存在下,放置另一个支持基材208与金刚石台202’相邻并将其固定于此。支持基材208可包含烧结碳化钨或对于本领域技术人员已知的其它合适材料。如图2C所示,粘结剂材料210可以以(例如)粉末形式或在金刚石台202’和支持基材208之间放置的层中的薄盘210a的形式(作为支持基材208材料的完整部分210b)或两者皆有的形式存在于步骤104的开始。当步骤104完结时,具有包含粘结剂材料210在其中的金刚石台202”的多晶金刚石复合片200’的产生归因于粘结剂材料210从其一个或多个来源迁移到多晶金刚石复合片200’的金刚石晶体之间的间隙空位中,这些间隙空位是在步骤102中在移除催化剂204时空出的。
如上所注意的,在粘结剂材料210存在下进行的另一常规高温高压工艺可在与用于形成金刚石台202相当的温度和压力下进行,或可在更低的压力和温度下进行。例如,金刚石台202可在至少约5GPa的压力和约1500℃的温度下形成,而另一种高温高压工艺可在基本上不同的,例如在约6至约7GPa范围内或甚至约8GPa以上的更高压力,和约1650℃至约2200℃范围内的温度下进行。相反地,用于形成金刚石台的压力可在约6至约7GPa范围内或甚至约8GPa以上,并且温度可在约1650℃至约2200℃范围内,而在粘结剂材料存在下的另一高温高压工艺可在基本上不同的更低压力例如至少约5GPa,和约1500℃的温度下进行以保持处于金刚石稳定区,并防止在步骤104期间金刚石台202’的后石墨化。金刚石台202’这样的后石墨化趋势根据所采用的粘结剂的催化性质可为特别关注的。在每一个前述的实施例中,仅可改变压力,而用于分别形成金刚石台202和将金刚石台202’附着到支持基材208的温度可基本上相同。相反地,在两个分别的步骤100和步骤104中,也可改变温度。此外,对于每一个工艺的温度和压力的时间可在从约20秒延伸至约20分钟以上的范围内改变。
在上述段落中提出的第一个实施例中,金刚石台202可在相对较低的温度和压力下形成,以制备较低密度和较大孔隙率的金刚石和金刚石结合的结构,从而有利于采用酸浸取或其它常规的侵入性工艺移除催化剂204。随后,将金刚石台202’附着到支持基材208可在显著较高(例如,高出约额外的百分之十以上)的压力和温度下进行,从而提高所得的金刚石台202”的密度和强度。在上述段落中提出的第二个实施例中,用于形成金刚石台202的相对较高的压力和温度将提供高密度和强度的金刚石结构,而用于将金刚石台202’附着到支持基材208的相对较低的压力和温度将不会使所得的金刚石台202”的密度和强度折中,同时减少粘结剂材料210的添加和基材208的附着的循环时间。
在进一步的步骤106中,金刚石台202”的一个或多个区域212a、212b(分别地并作为非限制性实施例,与切割面相邻的区域和与金刚石台202”的侧表面214相邻的区域)基本上和选择性地从中移除粘结剂材料210,同时排除与支持基材208的接触,并且作为非限制性实施例,金刚石台202”的侧面214的部分与浸取剂。当然,可将粘结剂材料从金刚石台202”移除到任何所需的大的程度或深度。作为非限制性实施例,合适的深度可以为约.04mm至.5mm的范围。可采用任何前述的浸取剂,并且一种特别适合的浸取剂是在高于110℃的温度下持续约3至约60小时的盐酸(HCl),如图2D所示,其取决于从暴露于浸取剂的金刚石台202”表面移除粘结剂材料210的所需深度。如现有技术中已知的那样,通过在塑性树脂中包裹基材208和一部分金刚石台202”,通过用覆盖材料涂覆基材208和一部分金刚石台202”,或通过使用对浸取剂耐密封的“O”型环,采用塑性固定装置对金刚石台202”的侧表面214压缩,可以排除与浸取剂的接触。在由于从金刚石台202”的至少一个或多个区域212a、212b移除粘结剂材料210的使用期间,所得的多晶金刚石复合片200”提供了改善的热稳定性和因而改善的耐磨性。在金刚石台202”的另一个或多个区域中的粘结剂材料的存在可改善其持久性和冲击强度。本文的发明人已经注意到,令人惊讶地并且与行业中常规思想相反:在从中最初移除催化剂后,对于相等金刚石密度的金刚石台,在其中引入粘结剂的所得金刚石台的强度与其中具有催化剂(用于形成金刚石台)的金刚石台的强度基本上相等。
作为一个非限制性实施例,在本发明的实施方案的实施中,适合用作催化剂和粘结剂的材料包括VIII族元素及其合金,例如Co、Ni、Fe及其合金。因而,在一种实施方式中,Co可在多晶金刚石复合片的形成中作为催化剂使用,随后将其浸取催化剂和移除支持基材。Ni因而可用作粘结剂材料以将所得的浸取的金刚石台附着到另一支持基材。在另一实施方式中,在多晶金刚石复合片的形成中采用Fe合金作为催化剂,随后将其浸取催化剂和移除支持基材。Co因而可用作粘结剂材料以将所得的浸取的金刚石台附着到另一个支持基材。在另一实施方式中,Co可在多晶金刚石复合片的形成中作为催化剂使用,随后将其浸取催化剂和移除支持基材。Co/Ni合金因而可用作粘结剂材料以将所得的浸取的金刚石台附着到另一个支持基材。在前述实施方式的变体中,Co可在多晶金刚石复合片的形成中作为催化剂使用,随后将其浸取催化剂和移除支持基材。Fe/Ni合金因而可用作粘结剂材料以将所得的浸取的金刚石台附着到另一个支持基材。如上所述,粘结剂材料可结合入烧结碳化钨或其它合适的基材中,可施加到在浸取的金刚石台和另一个支持基材之间的界面,或两者。在又一个变体中,可将粘结剂材料210放置与一个或多个表面相邻(例如,与基材210相对的金刚石台202’的表面),从而有利于在步骤104中将粘结剂材料210引入金刚石台202’中。
参考附图中的图3,显示了旋转刮刀钻头形式的钻头10。钻头10包括钻头体11。钻头10包括在其杆上的常规外螺纹12,该外螺纹配置成API标准并且适合连接钻柱部件(没有显示)。在钻头体11的面14上安装有很多切割元件16,至少其中一部分展现根据本发明的切割元件的实施方案的结构,每个切割元件16包含在支持碳化物基材上形成的多晶金刚石复合片(PDC)台18。放置切割元件16以切割正在钻进的地下岩层,同时钻头10在钻压(WOB)下在钻进中围绕中心线20旋转。钻头体11可包括计量修整器(gage trimmer)23,至少其中一部分可展现根据本发明的切割元件的实施方案的结构,每个计量修整器23包括一个前述的PDC台18,这样的台18配置有修整和保持钻孔的计量直径的刃(没有示出),以及在计量器上的衬垫22,其与钻孔的壁接触并稳定孔中的钻头。在本文中使用的术语“钻头”包括刮刀钻头、牙轮钻头、混合钻头、铰孔器、研磨件和其它用于钻进和扩大井孔的地下工具。
在钻进期间,通过位于喷嘴口28的喷嘴组件30排放钻进泥浆(其与钻头体11的面14流体交换),用于冷却切割元件16的PDC台18和从钻头10的面14移除岩层切削物进入通道15和垃圾槽17。对于不同的泥浆流量可选定喷嘴组件30的孔24的尺寸,这取决于特定的喷嘴组件30将钻进泥浆引入到每一组切割元件16需要的所需冲洗。
尽管前述的描述包含许多细节和实施例,但这些并不限制本发明的范围,而仅是作为提供一些实施方案的说明。类似地,可设计本发明的其它实施方案,这不偏离本发明的范围。因此,本发明的范围仅由附属的权利要求及其等同物来说明和限制,而不是前述的描述。对在本文公开的发明的所有增加、删减和改变以及落入权利要求的意思中的均包含于它们的范围内。
Claims (20)
1.一种形成多晶金刚石元件的方法,该方法包括:
在催化剂存在下,在足以形成金刚石和金刚石结合的温度下形成多晶金刚石复合片;
从多晶金刚石复合片基本上移除催化剂;以及
在足够高以维持多晶金刚石复合片中金刚石和金刚石结合的稳定性的温度和压力下,在至少部分不同于催化剂材料的粘结剂材料的存在下,将从其中基本移除催化剂的多晶金刚石复合片固定到支持基材。
2.根据权利要求1的方法,其中通过浸取实施从多晶金刚石复合片基本上移除催化剂。
3.根据权利要求2的方法,其中多晶金刚石复合片在支持基材上形成,并且由此移除在其上形成有多晶金刚石复合片的支持基材。
4.根据权利要求2的方法,其中多晶金刚石复合片作为独立式结构形成。
5.根据权利要求1的方法,还包括从多晶金刚石复合片的至少一个区域移除粘结剂材料。
6.根据权利要求5的方法,其中通过浸取从多晶金刚石复合片的至少一个区域移除粘结剂材料。
7.根据权利要求5的方法,其中从多晶金刚石复合片的至少一个区域移除粘结剂材料包括从多晶金刚石复合片的切割面的至少一部分和多晶金刚石复合片的侧表面的至少一部分中的至少之一移除粘结剂材料。
8.根据权利要求1的方法,其中用于形成金刚石台的温度和压力的至少之一高于用于将从其中基本移除催化剂的多晶金刚石复合片固定到支持基材的单个温度或压力。
9.根据权利要求1的方法,其中用于形成金刚石台的温度和压力的至少之一低于用于将从其中基本移除催化剂的多晶金刚石复合片固定到支持基材的单个温度或压力。
10.根据权利要求1的方法,其中形成多晶金刚石复合片的压力基本上不同于用于将多晶金刚石复合片固定到支持基材的压力。
11.一种多晶金刚石元件,包含:
采用催化剂形成的多晶金刚石复合片;以及
固定到多晶金刚石复合片的支持基材;
其中多晶金刚石元件包含至少部分不同于催化剂材料的粘结剂材料。
12.根据权利要求11的多晶金刚石元件,其中所述多晶金刚石复合片基本上不含催化剂。
13.根据权利要求12的多晶金刚石元件,其中所述多晶金刚石元件的至少一个区域基本上不含粘结剂材料。
14.根据权利要求13的多晶金刚石元件,其中所述至少一个区域包含与切割面相邻的区域和与多晶金刚石复合片的侧表面相邻的区域中的至少之一。
15.根据权利要求11的多晶金刚石元件,其中所述粘结剂材料包含另一种不同的催化剂。
16.一种用于钻探地下岩层的钻头,包含:
本体;
用于将本体连接到钻柱的结构;
固定到本体用于处理地下岩层的至少一个切割元件,
该至少一个切割元件包含:
采用催化剂形成的多晶金刚石复合片;以及
固定到多晶金刚石复合片的支持基材;
其中多晶金刚石元件包含至少部分不同于催化剂材料的粘结剂材料。
17.根据权利要求16的钻头,其中所述多晶金刚石复合片基本上不含催化剂。
18.根据权利要求17的钻头,其中所述多晶金刚石元件的至少一个区域基本上不含粘结剂材料。
19.根据权利要求18的钻头,其中所述至少一个区域包含与切割面相邻的区域和与多晶金刚石复合片的侧表面相邻的区域中的至少之一。
20.根据权利要求16的钻头,其中所述粘结剂材料包含另一种不同的催化剂。
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- 2010-01-15 MX MX2011007251A patent/MX2011007251A/es not_active Application Discontinuation
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- 2010-01-15 BR BRPI1007389A patent/BRPI1007389A2/pt not_active IP Right Cessation
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US9435159B2 (en) | 2016-09-06 |
BRPI1007389A2 (pt) | 2016-02-16 |
US20140048338A1 (en) | 2014-02-20 |
EP2379256A2 (en) | 2011-10-26 |
US8573332B2 (en) | 2013-11-05 |
CA2749776A1 (en) | 2010-07-22 |
WO2010083351A3 (en) | 2010-10-21 |
EP3698903A1 (en) | 2020-08-26 |
RU2539639C2 (ru) | 2015-01-20 |
MX2011007251A (es) | 2011-07-28 |
EP2379256A4 (en) | 2014-05-07 |
US20100181117A1 (en) | 2010-07-22 |
EP2379256B1 (en) | 2020-07-15 |
RU2011133949A (ru) | 2013-02-27 |
WO2010083351A2 (en) | 2010-07-22 |
CA2749776C (en) | 2016-01-05 |
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