CN102280514B - Method for preparing solar cell with carbon germanium thin film serving as intrinsic layer - Google Patents
Method for preparing solar cell with carbon germanium thin film serving as intrinsic layer Download PDFInfo
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- CN102280514B CN102280514B CN2011102314601A CN201110231460A CN102280514B CN 102280514 B CN102280514 B CN 102280514B CN 2011102314601 A CN2011102314601 A CN 2011102314601A CN 201110231460 A CN201110231460 A CN 201110231460A CN 102280514 B CN102280514 B CN 102280514B
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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Abstract
The invention discloses a method for preparing a solar cell with a carbon germanium thin film serving as an intrinsic layer, and relates to a solar cell and a method for preparing the solar cell. The invention aims to solve the problem that the traditional solar cell which takes an amorphous silicon material as the intrinsic layer has wide band gap and small absorption coefficient. The solar cell comprises a transparent substrate (1), a transparent conductive thin film (2), a P-type window layer (3), an intrinsic layer and an N-type layer (5). The method comprises the following steps of: plating the transparent conductive thin film (2) on the transparent substrate (1); plating the P-type window layer (3) on the transparent conductive thin film (2); cleaning, heating, preserving heat, introducing argon, backwashing and cleaning; preparing the intrinsic layer (4); and preparing the N-type layer (5) to complete the preparation of the solar cell with the carbon germanium thin film serving as the intrinsic layer. The solar cell disclosed by the invention is novel in structure, simple in preparation and easy to operate; the carbon germanium thin film serves as the intrinsic layer, has the advantages of narrow band gap and high optical absorption, and can improve the photoelectric transformation efficiency. The invention is applied to the field of solar cells.
Description
Technical field
The present invention relates to a kind of solar cell and preparation method thereof.
Background technology
The solar radiation spectrum in the earth atmosphere upper bound more than 99% between 0.15～4.0 micron of wavelength.About 50% solar radiation energy is (0.4～0.76 micron of wavelength) in the visible range, and 7% in the ultraviolet spectra district (wavelength＜0.4 micron), 43% in infrared spectral region (wavelength＞0.76 micron).Present amorphous silicon thin-film solar cell with intrinsic layer as the absorbed layer technology in, the performance of intrinsic layer badly influences the operating efficiency of solar cell.Generally have the parameter of two aspects that requirement is arranged to intrinsic layer: the one, its band gap width, another is its absorption coefficient.At present often take amorphous silicon material as intrinsic layer, its band gap is about 1.8eV, and corresponding absorbing wavelength is below 0.69 micron, and this nearly also has for solar spectrum that 50% energy is not utilized, and has greater band gap, absorption coefficient shortcoming less than normal.Therefore should improve solar battery efficiency by the absorption efficiency that improves solar cell and the spectral response range that improves solar cell.
Summary of the invention
The present invention will solve to have now to have greater band gap, absorption coefficient problem less than normal take amorphous silicon material as intrinsic layer, and it is solar cell of carbon germanium film and preparation method thereof that intrinsic layer is provided.
Intrinsic layer of the present invention is the solar cell of carbon germanium film, comprise transparent substrates, transparent conductive film, P type Window layer, intrinsic layer and N-type layer, transparent conductive film is located on the upper surface of transparent substrates, P type Window layer is located on the upper surface of transparent conductive film, intrinsic layer is located on the upper surface of P type Window layer, and the N-type layer is located on the upper surface of intrinsic layer; Wherein said intrinsic layer is the carbon germanium film.
Above-mentioned intrinsic layer is the preparation method of the solar cell of carbon germanium film, carries out according to the following steps: one, will plate transparent conductive film on the transparent substrates; Two, the transparent conductive film on transparent substrates plates P type Window layer; Three, will be with the transparent substrates of transparent conductive film and P type Window layer with acetone Ultrasonic Cleaning 15～30 minutes, be 99.5% ethanolic solution cleaning 15～30 minutes with mass percent concentration again, used at last washed with de-ionized water 15～30 minutes; Four, the transparent substrates with transparent conductive film and P type Window layer that will process through step 3 is 1.0 * 10 in vacuum degree
-4～9.9 * 10
-4Under the condition of handkerchief, being heated to 25～700 ℃, passing into argon gas after then being incubated 10～120 minutes, is under the condition of 3～5 handkerchiefs at pressure again, the upper surface of P type Window layer is carried out backwash cleaned 10～20 minutes; Five, be that sputtering power on 60～200 watts, germanium target is that 60～200 watts, gas flow are under the condition of 10～50 ml/min at the sputtering power on the graphite target, apply the sputtering power starter, pre-sputter 3～5 minutes is to pressure drop to 0.1～2 handkerchiefs, then be that 0～-200 volt, duty ratio are under 10～90% the condition at pulsed negative bias, to the P type Window layer upper surface plated film of processing through step 4, then naturally cool to room temperature under vacuum condition, namely the upper surface in P type Window layer obtains intrinsic layer; Six, plate the N-type layer at intrinsic layer, namely finish the preparation that intrinsic layer is the solar cell of carbon germanium film.
Solar battery structure of the present invention is novel, and preparation technology is simple, easily operation; Intrinsic layer is the carbon germanium film, has narrow band gap, the advantage that optical absorption is larger, and the absorption coefficient of intrinsic layer of the present invention is 10
4～10
6Cm
-1, optical band gap is 1.05～1.55eV; Adopting the carbon germanium film is spectral response range, stability and the electricity conversion that intrinsic layer can improve solar cell.
Description of drawings
Fig. 1 is that intrinsic layer of the present invention is the structural representation of the solar cell of carbon germanium film; Fig. 2 is the absorption coefficient excursion figure of intrinsic layer in the embodiment 58; Fig. 3 be in the embodiment 58 intrinsic layer optical band gap excursion figure.
Embodiment
Technical solution of the present invention is not limited to following cited embodiment, also comprises the combination in any between each embodiment.
Embodiment one: describe present embodiment in conjunction with Fig. 1.The intrinsic layer of present embodiment is the solar cell of carbon germanium film, comprise transparent substrates 1, transparent conductive film 2, P type Window layer 3, intrinsic layer 4 and N-type layer 5, transparent conductive film 2 is located on the upper surface of transparent substrates 1, P type Window layer 3 is located on the upper surface of transparent conductive film 2, intrinsic layer 4 is located on the upper surface of P type Window layer 3, and N-type layer 5 is located on the upper surface of intrinsic layer 4; Wherein said intrinsic layer 4 is the carbon germanium film.
1 is transparent substrates among Fig. 1, and 2 is transparent conductive film, and 3 is P type Window layer, and 4 is intrinsic layer, and 5 is the N-type layer.
Embodiment two: embodiment one described intrinsic layer is the preparation method of the solar cell of carbon germanium film, carries out according to the following steps: one, lead transparent electrical film 2 with plating on the transparent substrates 1; Two, the transparent conductive film on transparent substrates 12 plates P type Window layer 3; Three, will be with the transparent substrates 1 usefulness acetone Ultrasonic Cleaning of transparent conductive film 2 and P type Window layer 3 15～30 minutes, be that 99.5% ethanolic solution cleaned 15～30 minutes with mass percent concentration again, used at last washed with de-ionized water 15～30 minutes; Four, the transparent substrates 1 with transparent conductive film 2 and P type Window layer 3 that will process through step 3 is 1.0 * 10 in vacuum degree
-4～9.9 * 10
-4Under the condition of handkerchief, being heated to 25～700 ℃, passing into argon gas after then being incubated 10～120 minutes, is under the condition of 3～5 handkerchiefs at pressure again, the upper surface of P type Window layer 3 is carried out backwash cleaned 10～20 minutes; Five, be that sputtering power on 60～200 watts, germanium target is that 60～200 watts, gas flow are under the condition of 10～50 ml/min at the sputtering power on the graphite target, apply the sputtering power starter, pre-sputter 3～5 minutes is to pressure drop to 0.1～2 handkerchiefs, then be that 0～-200 volt, duty ratio are under 10%～90% the condition at pulsed negative bias, to the P type Window layer 3 upper surface plated films of processing through step 4, then naturally cool to room temperature under vacuum condition, namely the upper surface in P type Window layer 3 obtains intrinsic layer 4; Six, plate N-type layer 5 at intrinsic layer 4, namely finish the preparation that intrinsic layer is the solar cell of carbon germanium film.
The present embodiment step 1 is described, and method, step 6 that the described transparent conductive film 2 on transparent substrates 1 of method, the step 2 of leading transparent electrical film 2 plates P type Window layer 3 are described to plate the method for N-type layer 5 at intrinsic layer 4 with plating on the transparent substrates 1, can adopt the methods such as chemical vapour deposition (CVD), magnetron sputtering or evaporation coating.
Embodiment three: what present embodiment and embodiment two were different is: Ultrasonic Cleaning is 15 minutes in the step 3.Other is identical with embodiment two.
Embodiment four: what present embodiment and embodiment two were different is: Ultrasonic Cleaning is 30 minutes in the step 3.Other is identical with embodiment two.
Embodiment five: what present embodiment and embodiment two were different is: Ultrasonic Cleaning is 20 minutes in the step 3.Other is identical with embodiment two.
Embodiment six: what present embodiment was different from one of embodiment two to five is: be that 99.5% ethanolic solution cleaned 15 minutes with mass percent concentration in the step 3.Other is identical with one of embodiment two to five.
Embodiment seven: what present embodiment was different from one of embodiment two to five is: be that 99.5% ethanolic solution cleaned 30 minutes with mass percent concentration in the step 3.Other is identical with one of embodiment two to five.
Embodiment eight: what present embodiment was different from one of embodiment two to five is: be that 99.5% ethanolic solution cleaned 20 minutes with mass percent concentration in the step 3.Other is identical with one of embodiment two to five.
Embodiment nine: what present embodiment was different from one of embodiment two to eight is: use washed with de-ionized water 15 minutes in the step 3.Other is identical with one of embodiment two to eight.
Embodiment ten: what present embodiment was different from one of embodiment two to eight is: use washed with de-ionized water 30 minutes in the step 3.Other is identical with one of embodiment two to eight.
Embodiment 11: what present embodiment was different from one of embodiment two to eight is: use washed with de-ionized water 20 minutes in the step 3.Other is identical with one of embodiment two to eight.
Embodiment 12: what present embodiment was different from one of embodiment two to 11 is: vacuum degree is 1.0 * 10 in the step 4
-4Handkerchief.Other is identical with one of embodiment two to 11.
Embodiment 13: what present embodiment was different from one of embodiment two to 11 is: vacuum degree is 9.9 * 10 in the step 4
-4Handkerchief.Other is identical with one of embodiment two to 11.
Embodiment 14: what present embodiment was different from one of embodiment two to 11 is: vacuum degree is 3.0 * 10 in the step 4
-4～7.0 * 10
-4Handkerchief.Other is identical with one of embodiment two to 11.
Embodiment 15: what present embodiment was different from one of embodiment two to 11 is: vacuum degree is 5.0 * 10 in the step 4
-4Handkerchief.Other is identical with one of embodiment two to 11.
Embodiment 16: what present embodiment was different from one of embodiment two to 11 is: vacuum degree is 2.0 * 10 in the step 4
-4Handkerchief.Other is identical with one of embodiment two to 11.
Embodiment 17: what present embodiment was different from one of embodiment two to 16 is: be heated to 25 ℃ in the step 4.Other is identical with one of embodiment two to 16.
Embodiment 18: what present embodiment was different from one of embodiment two to 16 is: be heated to 700 ℃ in the step 4.Other is identical with one of embodiment two to 16.
Embodiment 19: what present embodiment was different from one of embodiment two to 16 is: be heated to 50～600 ℃ in the step 4.Other is identical with one of embodiment two to 16.
Embodiment 20: what present embodiment was different from one of embodiment two to 16 is: be heated to 100～500 ℃ in the step 4.Other is identical with one of embodiment two to 16.
Embodiment 21: what present embodiment was different from one of embodiment two to 16 is: be heated to 200 ℃ in the step 4.Other is identical with one of embodiment two to 16.
Embodiment 22: what present embodiment was different from one of embodiment two to 16 is: be heated to 300 ℃ in the step 4.Other is identical with one of embodiment two to 16.
Embodiment 23: what present embodiment was different from one of embodiment two to 22 is: insulation passed into argon gas after 10 minutes in the step 4.Other is identical with one of embodiment two to 22.
Embodiment 24: what present embodiment was different from one of embodiment two to 22 is: insulation passed into argon gas after 120 minutes in the step 4.Other is identical with one of embodiment two to 22.
Embodiment 25: what present embodiment was different from one of embodiment two to 22 is: pass into argon gas after being incubated 30～100 minutes in the step 4.Other is identical with one of embodiment two to 22.
Embodiment 26: what present embodiment was different from one of embodiment two to 22 is: pass into argon gas after being incubated 50～80 minutes in the step 4.Other is identical with one of embodiment two to 22.
Embodiment 27: what present embodiment was different from one of embodiment two to 22 is: insulation passed into argon gas after 60 minutes in the step 4.Other is identical with one of embodiment two to 22.
Embodiment 28: what present embodiment was different from one of embodiment two to 27 is: pressure is 3 handkerchiefs in the step 4.Other is identical with one of embodiment two to 27.
Embodiment 29: what present embodiment was different from one of embodiment two to 27 is: pressure is 5 handkerchiefs in the step 4.Other is identical with one of embodiment two to 27.
Embodiment 30: what present embodiment was different from one of embodiment two to 27 is: pressure is 4 handkerchiefs in the step 4.Other is identical with one of embodiment two to 27.
Embodiment 31: what present embodiment was different from one of embodiment two to 30 is: the upper surface to P type Window layer 3 in the step 4 carries out backwash cleaning 10 minutes.Other is identical with one of embodiment two to 30.
Embodiment 32: what present embodiment was different from one of embodiment two to 30 is: the upper surface to P type Window layer 3 in the step 4 carries out backwash cleaning 20 minutes.Other is identical with one of embodiment two to 30.
Embodiment 33: what present embodiment was different from one of embodiment two to 30 is: the upper surface to P type Window layer 3 in the step 4 carries out backwash cleaning 15 minutes.Other is identical with one of embodiment two to 30.
Embodiment 34: what present embodiment was different from one of embodiment two to 33 is: the sputtering power in the step 5 on graphite target is 60 watts.Other is identical with one of embodiment two to 33.
Embodiment 35: what present embodiment was different from one of embodiment two to 33 is: the sputtering power in the step 5 on graphite target is 200 watts.Other is identical with one of embodiment two to 33.
Embodiment 36: what present embodiment was different from one of embodiment two to 33 is: the sputtering power in the step 5 on graphite target is 80～150 watts.Other is identical with one of embodiment two to 33.
Embodiment 37: what present embodiment was different from one of embodiment two to 33 is: the sputtering power in the step 5 on graphite target is 120 watts.Other is identical with one of embodiment two to 33.
Embodiment 38: what present embodiment was different from one of embodiment two to 37 is: the sputtering power in the step 5 on the germanium target is 60 watts.Other is identical with one of embodiment two to 37.
Embodiment 39: what present embodiment was different from one of embodiment two to 37 is: the sputtering power in the step 5 on the germanium target is 200 watts.Other is identical with one of embodiment two to 37.
Embodiment 40: what present embodiment was different from one of embodiment two to 37 is: the sputtering power in the step 5 on the germanium target is 80～140 watts.Other is identical with one of embodiment two to 37.
Embodiment 41: what present embodiment was different from one of embodiment two to 37 is: the sputtering power in the step 5 on the germanium target is 120 watts.Other is identical with one of embodiment two to 37.
Embodiment 42: what present embodiment was different from one of embodiment two to 41 is: gas flow is 10 ml/min in the step 5.Other is identical with one of embodiment two to 41.
Embodiment 43: what present embodiment was different from one of embodiment two to 41 is: gas flow is 50 ml/min in the step 5.Other is identical with one of embodiment two to 41.
Embodiment 44: what present embodiment was different from one of embodiment two to 41 is: gas flow is 20～40 ml/min in the step 5.Other is identical with one of embodiment two to 41.
Embodiment 45: what present embodiment was different from one of embodiment two to 41 is: gas flow is 25 ml/min in the step 5.Other is identical with one of embodiment two to 41.
Embodiment 46: what present embodiment was different from one of embodiment two to 45 is: pressure drop to 0.1 handkerchief in the step 5.Other is identical with one of embodiment two to 45.
Embodiment 47: what present embodiment was different from one of embodiment two to 45 is: pressure drop to 2 handkerchief in the step 5.Other is identical with one of embodiment two to 45.
Embodiment 48: what present embodiment was different from one of embodiment two to 45 is: pressure drop to 0.5 in the step 5～1.5 handkerchiefs.Other is identical with one of embodiment two to 45.
Embodiment 49: what present embodiment was different from one of embodiment two to 45 is: pressure drop to 1 handkerchief in the step 5.Other is identical with one of embodiment two to 45.
Embodiment 50: what present embodiment was different from one of embodiment two to 49 is: pulsed negative bias is 0 volt in the step 5.Other is identical with one of embodiment two to 49.
Embodiment 51: what present embodiment was different from one of embodiment two to 49 is: pulsed negative bias is-200 volts in the step 5.Other is identical with one of embodiment two to 49.
Embodiment 52: what present embodiment was different from one of embodiment two to 49 is: pulsed negative bias is-50～-150 volts in the step 5.Other is identical with one of embodiment two to 49.
Embodiment 53: what present embodiment was different from one of embodiment two to 49 is: pulsed negative bias is-100 volts in the step 5.Other is identical with one of embodiment two to 49.
Embodiment 54: what present embodiment was different from one of embodiment two to 53 is: duty ratio is 10% in the step 5.Other is identical with one of embodiment two to 53.
Embodiment 55: what present embodiment was different from one of embodiment two to 53 is: duty ratio is 90% in the step 5.Other is identical with one of embodiment two to 53.
Embodiment 56: what present embodiment was different from one of embodiment two to 53 is: duty ratio is 30%～70% in the step 5.Other is identical with one of embodiment two to 53.
Embodiment 57: what present embodiment was different from one of embodiment two to 53 is: duty ratio is 50% in the step 5.Other is identical with one of embodiment two to 53.
Embodiment 58: the present embodiment intrinsic layer is the preparation method of the solar cell of carbon germanium film, carries out according to the following steps: one, the method with chemical vapour deposition (CVD) deposits SnO at corning glass
2: the F conductive film; Two, then use the SnO of method on corning glass of chemical vapour deposition (CVD)
2: deposition P type Window layer p-a-Si:H on the F conductive film; Three, after step 2 is processed with SnO
2: the corning glass of F conductive film and P type Window layer p-a-Si:H is with acetone Ultrasonic Cleaning 20 minutes, is 99.5% ethanolic solution cleaning 20 minutes with mass percent concentration again, uses at last washed with de-ionized water 20 minutes; Four, will through step 3 process with SnO
2: the corning glass of F conductive film and P type Window layer p-a-Si:H is 2.0 * 10 in vacuum degree
-4Under the condition of handkerchief, being heated to 200 ℃, passing into argon gas after then being incubated 10 minutes, is under the condition of 5 handkerchiefs at pressure again, the upper surface of P type Window layer p-a-Si:H is carried out backwash cleaned 15 minutes; Five, be that sputtering power on 80 watts, germanium target is that 140 watts, gas flow are under the condition of 25 ml/min at the sputtering power on the graphite target, apply the sputtering power starter, pre-sputter 5 minutes is to pressure drop to 1.0 handkerchief, then be that 0 volt, duty ratio are under 50% the condition at pulsed negative bias, to the P type Window layer p-a-Si:H upper surface plated film of processing through step 4, then naturally cool to room temperature under vacuum condition, namely the upper surface at P type Window layer p-a-Si:H obtains intrinsic layer carbon germanium film; Six, the method with chemical vapour deposition (CVD) deposits N-type layer n-a-Si:H at intrinsic layer, namely finishes the preparation that intrinsic layer is the solar cell of carbon germanium film.
In the present embodiment absorption coefficient excursion of intrinsic layer as shown in Figure 2, the absorption coefficient of intrinsic layer is 10
4～10
6Cm
-1Intrinsic layer the optical band gap excursion as shown in Figure 3, the optical band gap of intrinsic layer is 1.05～1.55eV.The method of present embodiment has improved spectral response range, stability and the electricity conversion of solar cell.
Claims (9)
1. intrinsic layer is the preparation method of the solar cell of carbon germanium film, it is characterized in that intrinsic layer is the preparation method of the solar cell of carbon germanium film, carries out according to the following steps: one, will plate transparent conductive film (2) on the transparent substrates (1); Two, the transparent conductive film (2) on transparent substrates (1) plates P type Window layer (3); Three, will use acetone Ultrasonic Cleaning 15～30 minutes with the transparent substrates (1) of transparent conductive film (2) and P type Window layer (3), be that 99.5% ethanolic solution cleaned 15～30 minutes with mass percent concentration again, used at last washed with de-ionized water 15～30 minutes; Four, the transparent substrates (1) with transparent conductive film (2) and P type Window layer (3) that will process through step 3 is 1.0 * 10 in vacuum degree
-4～9.9 * 10
-4Under the condition of handkerchief, being heated to 25～700 ℃, passing into argon gas after then being incubated 10～120 minutes, is under the condition of 3～5 handkerchiefs at pressure again, the upper surface of P type Window layer (3) is carried out backwash cleaned 10～20 minutes; Five, be that sputtering power on 60～200 watts, germanium target is that 60～200 watts, gas flow are under the condition of 10～50 ml/min at the sputtering power on the graphite target, apply the sputtering power starter, pre-sputter 3～5 minutes is to pressure drop to 0.1～2 handkerchiefs, then be that 0～-200 volt, duty ratio are under 10～90% the condition at pulsed negative bias, to P type Window layer (3) the upper surface plated film of processing through step 4, then naturally cool to room temperature under vacuum condition, namely the upper surface in P type Window layer (3) obtains intrinsic layer (4); Six, plate N-type layer (5) at intrinsic layer (4), namely finish the preparation that intrinsic layer is the solar cell of carbon germanium film.
2. intrinsic layer according to claim 1 is the preparation method of the solar cell of carbon germanium film, it is characterized in that vacuum degree is 2.0 * 10 in the step 4
-4Handkerchief.
3. intrinsic layer according to claim 2 is the preparation method of the solar cell of carbon germanium film, it is characterized in that being heated in the step 4 200 ℃.
4. intrinsic layer according to claim 3 is the preparation method of the solar cell of carbon germanium film, it is characterized in that the sputtering power on graphite target is 80～150 watts in the step 5.
5. intrinsic layer according to claim 4 is the preparation method of the solar cell of carbon germanium film, it is characterized in that the sputtering power on the germanium target is 80～140 watts in the step 5.
6. intrinsic layer according to claim 5 is the preparation method of the solar cell of carbon germanium film, it is characterized in that gas flow is 25 ml/min in the step 5.
7. intrinsic layer according to claim 6 is the preparation method of the solar cell of carbon germanium film, it is characterized in that pressure drop to 1 handkerchief in the step 5.
8. intrinsic layer according to claim 7 is the preparation method of the solar cell of carbon germanium film, it is characterized in that pulsed negative bias is-50～-150 volts in the step 5.
9. intrinsic layer according to claim 8 is the preparation method of the solar cell of carbon germanium film, it is characterized in that duty ratio is 30%～70% in the step 5.
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| US4542256A (en) * | 1984-04-27 | 1985-09-17 | University Of Delaware | Graded affinity photovoltaic cell |
| US4816082A (en) * | 1987-08-19 | 1989-03-28 | Energy Conversion Devices, Inc. | Thin film solar cell including a spatially modulated intrinsic layer |
| CN1866546A (en) * | 2006-05-18 | 2006-11-22 | 威海蓝星玻璃股份有限公司 | Solar cell and preparing method thereof |
| CN101237000A (en) * | 2007-01-29 | 2008-08-06 | 北京行者多媒体科技有限公司 | Nano crystal silicon and non crystal germanium mixed absorption layer for multi-node light voltage part based on film silicon |
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| KR20080091329A (en) * | 2005-12-02 | 2008-10-10 | 헬리안토스 베.뷔. | Photovoltaic cell |
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|---|---|---|---|---|
| US4542256A (en) * | 1984-04-27 | 1985-09-17 | University Of Delaware | Graded affinity photovoltaic cell |
| US4816082A (en) * | 1987-08-19 | 1989-03-28 | Energy Conversion Devices, Inc. | Thin film solar cell including a spatially modulated intrinsic layer |
| CN1866546A (en) * | 2006-05-18 | 2006-11-22 | 威海蓝星玻璃股份有限公司 | Solar cell and preparing method thereof |
| CN101237000A (en) * | 2007-01-29 | 2008-08-06 | 北京行者多媒体科技有限公司 | Nano crystal silicon and non crystal germanium mixed absorption layer for multi-node light voltage part based on film silicon |
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