CN102280392B - There is the structural detail of plated through hole - Google Patents

Abstract

The present invention relates to a kind of method for manufacturing the structural detail with plated through hole.The method includes providing substrate (120), constituting insulating barrier (130) and make insulating barrier (130) structuring on substrate (120), at least a part of which is at given raceway groove etching area (131,132) removing insulating barrier (130) in, this raceway groove etching area surrounds substrate area (125).This method also includes performing etching process, the most structurized insulating barrier (130) is used for sheltering, to remove backing material in raceway groove etching area (131,132) and producing the channel structure (140) surrounding substrate area (125).This method is additionally included on insulating barrier (130) and constitutes metal level (150), and channel structure (140) is closed by metal level.The invention still further relates to a kind of structural detail with plated through hole.

Description

There is the structural detail of plated through hole

Technical field

The present invention relates to a kind of structural detail with plated through hole and one and have plated for manufacture The method of the structural detail of through hole.

Background technology

Electrical contact structure with different embodiments it is known that they are through substrate or the subregion of substrate Extend.The most vertical linked hole Via (" the Vertical Interconnect mutually of this contact structure Access "), interlayer circuit ON portion or plated through hole, they win increasing meaning because They are conducive to constituting joint space-efficient structural detail.Multiple structural details can also be folded the most up and down Put and electrically connected by affiliated plated through hole, it is possible to realize that there is little (laterally) size Layout.

The known method for manufacturing plated through hole based on: conductive substrates (it should be used as, and " lead by printing Line " work) the backing material insulation of substrate area and surrounding.Raceway groove engraving method is performed for this (" Trenchen "), for produce surround substrate area channel structure, it be generally of high in length and breadth Ratio.Relevant substrate area is also hung by the element of insulation on end face.On the one hand should close at this Channel structure, on the other hand provides the most smooth surface.The closing of channel structure is used for avoiding not Adding material definitely or undesirably, this may reliable to the insulation characterisitic of raceway groove or plated through hole Property has a negative impact.Smooth surface can or method below step easy to carry out: such as complementary Metal-oxide semiconductor (MOS) CMOS process (Complementary Metal Oxide Semiconductor) With micro-electromechanical system (MEMS) process (Micro-Electro-Mechanical System).

Produce the channel structure with geometry given, that somewhat open wide in the known process, It is the most such as full of for the oxide layer insulated and filler such as polysilicon.Then perform to planarize Journey, is used for making smooth surface.Yet with the given channel shape of relatively accurate setting, raceway groove Being completely filled with the execution with planarization, the method becomes the most bothersome and is difficult to control to.

Method known to another include manufacture opposite, narrow channel structure, it near surface by deposit oxygen Change layer to close.In order to dispose enclosed point as far as possible, modification regulation in the method, first form sediment Long-pending first oxide, it is anisotropically etched back, and then deposits the second oxide.In addition can set There is planarization steps, for realizing the smooth of oxide closure.This method is directed at a relatively high Expense, can not use further for some application.On the one hand along with the width of raceway groove to be closed Increase expense dramatically increases, and on the other hand can not manufacture Arbitrary Narrow and the deepest channel structure.

Summary of the invention

Therefore it is an object of the invention to, be given a kind of preferably for manufacturing the structure with plated through hole The solution of element.

This purpose realizes by the method according to the invention with by the structural detail according to the present invention.This Other advantageous embodiment of invention is given in the dependent claims.

According to the present invention, a kind of method for manufacturing the structural detail with plated through hole is proposed.The party Method includes providing a substrate, constitutes an insulating barrier and make insulation layer structure over the substrate, Qi Zhongzhi Removing this insulating barrier at given raceway groove etching area less, this raceway groove etching area surrounds substrate area. This method also includes performing etching process, and the most structurized insulating barrier is used for sheltering, in order to remove ditch Backing material in road etching area and produce the channel structure surrounding substrate area.This method is also wrapped Include and constitute metal level on the insulating layer, close channel structure by this metal level.

It is relatively easy and healthy and strong according to the method for the present invention, and is characterised by relatively little of work Step.Advantage is, insulating barrier serves not only as the etching mask in etching process scope, and is used for The purpose of the insulation of structural detail.In addition by means of the metal level (hermetically) constituted on the insulating layer Close channel structure, replace in bothersome process scope, being full of channel structure with insulating barrier or packed layer. Use metal level can also realize relatively solid or mechanically stable channel structure to close.Metal level is also Can by plane or even curface produce, thus without continuing (in possible subsequent process) Continuous planarization.Metal level can also use as around wiring or printed conductor plane simultaneously.In addition originally Method (in terms of temperature and pollution) is compatible with known MEMS and CMOS process.Plated logical The composition in hole is without high-temperature step, and thus this method can also be as having temperature sensitive preliminary procedure " Via-Last-Prozess " use.

The most so perform etching process so that structurized insulating barrier quilt Sapping and channel structure have the shape widened in the upper area of the insulating barrier of abutment structure. Thus can avoid with high reliability: the substrate area surrounded by the channel structure material by metal level (it constitute metal level time possibly in channel structure) with surround channel structure substrate section Connect or short circuit.

This is applicable to another preferred embodiment the most in corresponding manner, according to this embodiment so Perform etching process so that channel structure (also) has the shape widened in lower area.

In another preferred embodiment, additionally remove in raceway groove etching area when structuring Insulating barrier part in the opening area in portion.Constitute before this external execution etching process and cover aperture area The protective layer in territory, prevents from removing backing material in opening area by it.This external execution is etched Cheng Yihou removes protective layer.This working method can be in a straightforward manner at (being then coated with) gold Belong to setting up between layer and the substrate area surrounded by channel structure and be connected.

In another preferred embodiment, insulating barrier structure in the form of a grill in raceway groove etching area Change.The closing of channel structure thus can be reliably achieved by metal level.If channel structure certainly Constituted with sizable channel width and time metal level is constituted with relatively thin layer thickness, it is also possible to realize This point.

In another preferred embodiment, the composition of metal level includes constituting multiple layering.Thus can Enough use the most different metals and/or composition have different aspects (Anlagen) or aspect parameter point Layer.The metal level being made up of layering can be made in this way in its various functionally optimizations.Example As the first metal layer can be made to have small contact resistance, layer then has the good of channel structure Close and last layer has good (the critical medium possible arrival surface of the toleration to critical medium On).

May further specify that at this aspect, a part at least one layering in multiple layerings is being constituted It is removed before another layering in multiple layerings.Remove effect such as it may be that layering thickness A flat face reduces with the degree more violent than in opening area, or according to geometry Close this region further.Thus can work as when metal level has the least thickness in centre at ditch There is bigger thickness in closed area in road structure.

In another preferred embodiment, it is provided that there is on one side the substrate of etching stopping layer. Etching stopping layer provides probability, and when reaching etching stopping layer, etching process terminates.

Also propose a kind of structural detail according to the present invention, it has a substrate and in the substrate plated Through hole.Plated through hole includes substrate area and channel structure, and channel structure surrounds substrate area.This knot Constitutive element part also has the structurized insulating barrier being arranged on substrate, and this insulating barrier is at least at channel structure Region in be removed.In addition this structural detail has the metal level arranged on the insulating layer, by this Metal level closes channel structure.This structural detail can pass through the relatively simple and side of cost advantages Formula is made.The closing of the mechanically stable being also characterized by channel structure of this structural detail.

Accompanying drawing explanation

The present invention is explained in detail below by way of accompanying drawing.In accompanying drawing:

Fig. 1 to 5 illustrates the manufacture of the structural detail with plated through hole respectively with the sectional view of signal；

Fig. 6 illustrates the flow chart of the method for manufacturing the structural detail with plated through hole；

With the sectional view of signal, Fig. 7 to 9 illustrates that other has the structural detail of plated through hole respectively.

Detailed description of the invention

By means of figure below, the enforcement for manufacturing the method with plated through-hole structure element is described Mode, the method is relatively easy and reliable and requires that the job step performed is relative few.In system Make and method can use procedure (such as CMOS common in quasiconductor or microsystems technology With MEMS process) and material, therefore it is described partly in.In addition it is to be noted, that except shown With can perform other method step beyond described method step and process, be used for shown knot The manufacture of constitutive element part.

Fig. 1 to 5 illustrates for manufacturing the structural elements with plated through hole with the sectional view of signal respectively The method of part 111.Method step performed in the method is summarized the most in the fig. 6 flow diagram. Made structural detail 111 e.g. integrated circuit or semiconductor chip.To the example that this is possible it is Special IC (ASIC, Application Specific Integrated Circuit), memory construction Element and processor or microprocessor.

There is provided a substrate 120 in step 101 (seeing Fig. 6) when this method starts, this substrate exists Fig. 1 to 5 only illustrates partly.This substrate 120 e.g. silicon wafer, it is substantially all or at least Subregion (plated through hole after a while) is doped, is used for providing electric conductivity.

The substrate 120 provided the most as shown in Figure 1 a side 121, hereinafter also referred to as bottom surface 121 On there is other structure or layer, they can produce in common process scope.Such as it is included in lining Constituting transistor 160, its different conduction and doped region represent by means of dotted line at the end 120.The end of at A knot being made up of structurized insulating barrier 138 and structurized conductive layer 158 is also constituted on face 121 Structure.Such as there is the layer 158 of metal or (doping) polysilicon as printed conductor and as transistor The contact structure of 160 or its doped region.E.g. the insulating barrier 138 of silicon oxide layer is not only at transistor The region of 160 has perforate 136 and in the region of plated through hole after a while, there is perforate 137. On these positions, the layer 158 being arranged on insulating barrier 138 beyond perforate 136,137 is against (former Begin) substrate 120 or its side 121, it is possible to realize transistor 160 and plated through hole after a while Substrate area 125 between electrical connection.

Right with bottom surface 121 at substrate 120 as shown in Figure 2 in another step 102 (seeing Fig. 6) Hard mask or etching mask is constituted on the side 122 put, hereinafter referred to as end face 122.For this first at lining Insulating barrier or the dielectric layer 130 with such as silicon oxide is constituted on the end face 122 at the end 120.This can lead to Cross in the following manner to realize: such as will by execution CVD method (Chemical Vapor Deposition) Layer 130 is coated on substrate 120 in large area.Such as consider so-called with tetraethyl orthosilicate (TEOS) as the TEOS method of raw material.Alternatively can constitute layer 130 in the following manner: Side of substrate 122 grows thermal oxide.

Insulating barrier 130 is also structured, and insulating barrier 130 is in given region 132 the most as shown in Figure 2 With another given region 133 is removed or opens wide and substrate 120 exposes over these locations. In order to the structuring of insulating barrier 130 can use common photolithographic structuring and etching side Method.The side view of the raceway groove produced it is arranged in etching process scope after a while also by region 132 Being also referred to as raceway groove etching area 132 the most below, this region (in a top view) has encirclement substrate Region 125 close-shaped, such as with rectangular shape or with toroidal (not shown).In fig. 2 The substrate area 125 of encirclement is indicated by means of dotted line.Opening area 133, also referred to as " blanking area " 133, produced and the electrical contact of substrate 120 by its (after a while), this opening area is equally by raceway groove It is internal that etching area 132 surrounds or be arranged on raceway groove etching area 132.

After structuring insulating barrier 130 also on substrate 120 or insulating barrier 130 at raceway groove etching area The protective layer 135 that 132 Inner Constitution are additional, the substrate that thus opening area 133 or (originally) expose 120 are covered as shown in Figure 2 on this position again.This protective layer 135 is used for preventing from being etched in out Bore region 133 above or in substrate 120.Material as protective layer 135 such as considers photoresist. Etching mask is completed after constituting protective layer 135.

Then in step 103 (see Fig. 6), trench etch process (" Trenchen ") is performed, in the middle part of it The structurized insulating barrier 130 covered with protective layer 135 is divided to be used for covering substrate 120.Lose as raceway groove Quarter, process such as considered deep reaction ion etching process (DRIE Deep Reactive Lon Etching). A kind of possible example is so-called Bosch process, and wherein etching layer and passivation layer repeat continuously. The backing material in raceway groove etching area 132 is removed, the most as shown in Figure 3 in trench etch process Produce the channel structure 140 surrounding substrate area 125.At this substrate area 125 and channel structure 140 Constitute the ingredient with insulation of the conduction of plated through hole together.Substrate area 125 is (hereinafter also referred to as Plated via regions 125) pass through channel structure 140 relative to substrate 120 insulated with material surrounded.Hold Row trench etch process reaches up to the insulating barrier 138 on substrate 120 bottom surface 121, this insulating barrier (with Insulating barrier 130 on substrate 120 end face 122 is the same with protective layer 135) in etching process not or It is etched hardly and therefore can play a role in the sense that " etching stopping layer ".

The most so perform trench etch process so that insulated trenches or channel structure 140 have relatively High aspect ratio, i.e. channel width is much smaller than channel height or channel depth.Thus can reach, Channel structure 140, in substrate 120 or its side 121, has only to relatively small area on 122.

In addition specify, so perform trench etch process so that the insulation on substrate 120 end face 122 Layer 130 is had on this position by sapping and channel structure 140 to be widened on end face 122 direction Or the shape widened.In order to clearly illustrate, figure 3 illustrates the channel region 142 widened, it Such as occur with the form of groove.In addition specify, so perform trench etch process so that channel junction Structure 140 also has shape that is that be open upwards or that widen bottom surface 121 side, it in figure 3 by means of The channel region 143 with the most multiple groove widened represents.Alternatively channel region 143 also may be used Occur with the channel away single with.At channel region 142, between 143, channel structure has " straight line " section, it has the channel walls being mutually perpendicular to or extending in parallel.The expansion of channel structure 140 Wide channel region 142,143, can as to further describe further below by means of it The insulation characterisitic of channel structure 140 is ensured, it is possible to by correspondingly selecting or determining etched by ground The etching parameter used in journey produces.

In the range of step 103 (seeing Fig. 6) also after constituting channel structure 140 such as Fig. 3 institute Show removal protective layer 135, thus in opening area 133, (again) expose substrate 120.There is light Can be such as described by using acetone or other solvent to perform in the case of carving the protective layer 135 of material Remove.

Metal level 150 is coated by next step 104 (seeing Fig. 6) as shown in Figure 4 in large area On substrate 120 or insulating barrier 130.The most also (tying for etch channels at this metal level 150 Structure 140) region of raceway groove etching area 132 is constituted, close channel structure 140 the most hermetically. Metal level 150 is also applied directly on substrate 120 in opening area 133, is achieved at metal Electrical contact between layer 150 and plated via regions 125.Metal material as layer 150 is such as examined Consider aluminum, nickel or titanium.Other metal can also be used, as describe in further detail below.Must Layer deposit can also be produced inside channel structure 140, as in the diagram by means of other gold when wanting Belong to as shown in layer 152,153.

For constituting the deposition process that the possible process of metal level 150 especially orients, the such as side of sputtering Method or evaporation coating method.The deposition process of orientation provides probability: (to a great extent) suppresses at ditch Layer deposit on road structure 140 edge or channel walls, and it is possible to avoid (by the metal of deposit) Realize the electrical connection between plated via regions 125 and the substrate 120 surrounding channel structure 140, logical Cross electrical connection and may be unfavorable for or cancel the insulation characterisitic of channel structure 140.

When the most nondirectional Metal deposition on raceway groove top edge or deposit, as By means of as shown in metal level 152 in Fig. 4, it is possible to prevent this by the sapping of insulating barrier 130 Plant less desirable connection.By the channel region widened occurred on this position of channel structure 140 Territory 142 makes the metal level 152 in channel structure 140 and the metal on metal level 150 surface or section Layer 150 is reliably separated from each other by enough distances, and metal level is the most if desired at raceway groove Etching area 132 slightly extend in channel structure 140 and " surrounding (umgreifen) " insulation Layer 132.

In terms of layer deposit issuable on insulating barrier 138, it is in the diagram by means of metal Layer 153 represents, can reliably be prevented by the channel region 143 widened occurred on this position The only electrical connection between plated via regions 125 and the substrate section surrounding channel structure 140.

The composition of metal level 150 provides probability, and i.e. channel structure 140 is in a relatively simple manner Close, replace being full of channel structure 140 with bothersome process by packing material.By means of metal level 150 can also realize the relatively firm of channel structure 140 or the closing of mechanically stable.In addition can be by gold Belong to layer 150 to be so coated on substrate 120 or insulating barrier 130 so that metal level 150 (loses at raceway groove Carve beyond region 132) there is opposite planar or even curface.Therefore at possible subsequent process (they are premised on there is flat surface) can save and perform bothersome method of planarizing.

Cover channel structure 140 followed by can perform it in coating metal layer 150 with by layer 150 Its process, has been used for structural detail 111.Summarize the most in step 105 this A little processes especially include the structuring of metal level 150, as in Figure 5 by means of structural detail 111 As Suo Shi.Structuring for metal level 150 can use the knot of common photolithography Structure method and engraving method.In this way except close in addition to channel structure 140 can also be by Metal level 150 is as around wiring or printed conductor plane.

The metal level 150 contacting substrate 120 that can pass through in substrate surface 122 region related to this Transistor 160 on bottom surface 121, because metal level 150 is by opening area 133 and plated through hole area Territory 125 connects, the also adjacent conductive layer 158 being connected with transistor 160 of plated via regions.At raceway groove In etching process, the insulating barrier 130 as etching mask is used for making at this (as insulating barrier 138) " thread guide path " insulate relative to the substrate 120 beyond channel structure 140.

In the range of step 105, can also carry out other process, for such as substrate 120 or Other structure and/or layer or functional layer (not shown) is constituted on (structurized) metal level 150.This Can consider outward to perform to be divided into single process, for separate structure element 111.Can also be by structural elements Part 111 dispose in the housing and contacting and/or with other structural details one or more arrange or Linking together, wherein the electric contact of structural detail 111 is connected such as to connect by means of pressure welding silk and is realized. In order to illustrate that this contacting mode figure 5 illustrates a pressure welding silk 190, it is connected to metal level On 150.

Other advantages is that of this method in addition to the above mentioned advantages, can not have high-temperature step ground, i.e. Such as perform the whole process for being constituted plated through hole with the scope of less than about 500 DEG C, especially constitute Insulating barrier 130 and metal level 150.In this way can with temperature sensitive front method in combination Method step 102 to 105 shown in figure 6 is used as " Via-Last-Prozess ".

There is probability in the method for figure 6, otherwise perform or change each described step And/or process.In the cards change is described below in detail, and they can also be mutually combined.Want at this Pointing out, in terms of the details having been described above, they relate to identical or consistent part, spendable side Method step, possible advantage etc., refer to the above embodiments.

Such as in order to constitute metal level 150 at step 104 on substrate 120 or insulating barrier 130 also Row ground constitutes multiple different layerings, wherein can reuse sputtering or evaporation coating method (not shown). Layering such as can have different metals.It also is able to make all of or multiple layering have identical gold Belong to, but in a different manner, such as in different aspects or with different aspect deposits.Thus deposit In probability, the metal level 150 being i.e. made up of layering is in different characteristics and function aspects optimization.Example As metal level 150 can be made up of three metal level, wherein first (under) metal level have to The small contact resistance of substrate area 125, second (middle) metal level realizes channel structure 140 The closing of mechanically stable and the 3rd (on) metal level realizes high resistance to relative to critical medium By property, critical medium may arrive on surface.

Can also be proved advantageously, in multiple steps deposited metal 150 or with multiple points Layer form constitute metal level, and layering between remove the most again layer 150 a part (or by At least one layering is removed), such as by performing sputter etching process (reverse sputtering).By this Working method is it is achieved that the thickness of metal level 150 (or layering) is being opened with ratio on a flat face Kong Zhong, especially more violent in raceway groove etching area 132 region degree reduce, or according to geometry The re-closed this region of shape.Through this it is achieved that relative to the metal level 150 relatively thin in centre Thickness produces the thickness of increase in raceway groove etching area 132.

Another possible mapping mode relates in the figure 7 the structural detail 112 that (locally) illustrate.In system During making structural detail 112, when making insulating barrier 130 structuring in the scope of step 102 Do not constitute the raceway groove etching area 132 of (in a top view) continuous print or closing, but constitute grill-shaped The raceway groove etching area 131 with relative narrower galianconism, wherein grill-shaped raceway groove etching area 131 As continuous print raceway groove etching area 132 (in a top view) surround substrate area 125 and using In etch channels structure 141 (step 103).The complete sapping grid galianconism when raceway groove etches.Raceway groove The result of the grill-shaped expanded configuration of etching area 131 is that metal level 150 is the most no longer Completely enclosed whole channel width, but single " Nidus Vespae " of only closed lattice.Thus can be reliably The channel structure 141 with relatively wide raceway groove is closed by metal level 150, though metal level 150 When being constituted with the thickness of relative thin.

The method of Fig. 6 is not limited to manufacture the structural detail 111,112 shown in Fig. 5 and 7 or collection Become circuit, but can be used for manufacturing other structural detail.Especially can consider micro mechanical structure unit Part.

For the explanation of example, figure 8 illustrates an office of the structural detail 113 of this micromechanics Portion, it is such as acceleration transducer or rotation rate sensor.Structural detail 113 also has band There is the substrate 120 of plated through hole (the most plated via regions 125 and channel structure 140) and at substrate Middle level, end face 122 region 130,150.

Being provided with, on substrate 120 bottom surface 121, the structure being made up of insulating barrier 139, insulating barrier has portion Ground is divided to be embedded into wherein or the conductive layer 159 in road of ditching.Insulation layers silicon oxide layer in this way.Conductive layer 159 e.g. (doping) polysilicon layers and play the effect of printed conductor or contact structure, this is led Electric layer is directly connected with plated via regions 125 by the perforate in insulating barrier 139.With insulating barrier 139 It is provided with the functional layer 170 of conduction adjacently.This most so-called epitaxial polysilicon layer of functional layer 170, That is, the silicon layer of the polycrystalline produced with epitaxial growth method, it is constituted with can selecting doping.Functional layer 170 in subregion to have the micro mechanical structure 171 (micro structure exposed of function element of activity Or MEMS structure) form constitute.This micro mechanical structure 171 or one part on edge by Conductive layer 159 contacting.In addition another substrate 180 is by articulamentum 185 with functional layer 170 even Connect.Another substrate 180 (it such as has silicon) is hood-shaped substrate or capping wafer, airtight by means of it Ground seals micro mechanical structure 171.

According in the method for Fig. 6, exist such as in terms of structural detail 113 manufactures plated through hole Following probability, first provides and has by layer 139, the structure of 159,170 compositions Substrate 120, the most also do not constitute or expose micro mechanical structure 171.Then above-mentioned step can be performed Rapid 102,103,104, wherein insulating barrier 139 (step 103) in etching process can play etching The effect of stop-layer.In step 105 scope then, metal level 150 structuring can be made, logical Cross and perform corresponding MEMS process composition micro mechanical structure 171, functional layer 170 is passed through articulamentum 185 are connected with substrate 180 and are connected on metal level 150 by pressure welding silk 190 as shown in Figure 8.? This pressure welding silk 190 is tied with micromechanics by metal level 150, plated via regions 125 and conductive layer 159 Structure 171 electrically connects, and the current potential being used for such as applying to give in the operation of structural detail 113 is at microcomputer In tool structure 171.The procedural order replacing above-mentioned example can also perform these mistakes in other sequences Journey.Such as can perform step 102, before 103,104, provide in a step 101 and had There is the micro mechanical structure 171 of composition and there is the lining of the substrate 180 being connected with functional layer 170 if desired The end 120.

Another possible change of manufacture method relates in fig .9 the structural detail 114 that (locally) illustrate, It has the structure that the structural detail 111 with Fig. 5 is identical substantially.Different from structural detail 111, should Structural detail 114 on the end face 122 of substrate 120 or above there is another structural detail 161, this is another The one plated via regions of structural detail contacting 125.Structural detail 161 can be such as other circuit Structural detail or metal covering or metal tape.Another structural detail 161 has metal or other material, should Metal or other material in the etching process (step 103) of constituting channel structure 140 not (or It is etched hardly).Structural detail 161 can also be surrounded by this material.In this expansion structure Above-mentioned structure can be saved and remove protective layer 135.

The embodiment explained by means of accompanying drawing is the preferred of the present invention or the embodiment of example.Replace Described embodiment it is contemplated that other embodiment, and they can include other change or described spy The combination levied.

Such as there is this probability, i.e. these materials about described material to be replaced by other material. Can also provide and there is other structure or other substrate of other structure and/or use are different from the half of silicon Conductor material, constitutes plated through hole by above-mentioned measure wherein.In addition can perform and above-mentioned mistake The process of Cheng Butong and/or constitute other element and structure.

Such as there is probability in the structural detail 114 about Fig. 9, replaces discrete component 161 to be provided with many The element of individual contacting substrate area 125.It also is able to realize " trench digging road " element, in the middle part of it Subregion or side are positioned in the plane identical with substrate 120 end face 122.Can also be at substrate 120 Region, bottom surface 121 on or in be provided with other the element of contacting substrate area 125.This The end face of substrate 120 and/or bottom surface 122, have the extension knot of one or more add ons on 121 Structure can also be at Fig. 5, other structural detail 111 of 7 and 8, considers, add ons in 112,113 The plated via regions of contacting 125 or be adjacent.

In addition it is to be noted, that this method is not limited to manufacture single plated through hole in the substrate.By this Method can constitute much the most plated multiple through hole in the substrate, and this especially can substantially simultaneously or parallel Ground realizes.

There is also probability, the most in other sequences or in the way of common, perform described process. One possible example is the insulating barrier 130,138 of the structural detail 111 of pie graph 5.Replace at lining The end face at the end 120 and bottom surface 121, constitute insulating barrier 130,138 separated from each other on 122, it is also possible to At one public during on substrate 120 such as by two layers 130,138 of thermally grown generation.

In addition it is to be noted, that the channel structure 140,141 shown in Dai Tiing can produce have other structure or The channel structure of other geometry.One example is only to have to widen shape in upper area Channel structure.This geometry can select for situations below: is used for closing channel junction in composition Do not produce in the lower area of channel structure or produce almost negligible metal material during the metal level of structure Material deposit.

Claims (10)

1. for the method manufacturing the structural detail with plated through hole, including method step:

Substrate (120) is provided；

Described substrate (120) constitutes insulating barrier (130)；

Make described insulating barrier (130) structuring, wherein, at least given raceway groove etching area (131, 132) removing described insulating barrier (130) in, described raceway groove etching area surrounds substrate area (125)；

Performing etching process, wherein, described structurized insulating barrier (130) is used for sheltering, in order to go Remove the backing material in described raceway groove etching area (131,132) and produce the described substrate of encirclement The channel structure (140) in region (125), wherein, described substrate area is together with described channel structure Constitute ingredient and the ingredient of insulation of the conduction of described plated through hole；With

Described insulating barrier (130) constitutes metal level (150), is closed by described metal level described Channel structure (140).

Described etching process is the most so performed so that institute State structurized insulating barrier (130) by sapping and described channel structure (140) at adjacent described knot The upper area of the insulating barrier (130) of structure has the shape (142) widened.

3. the method according to any one of the preceding claims, wherein, so performs described etched Journey so that described channel structure (140) has the shape (143) widened in lower area.

4. method as claimed in claim 1 or 2, wherein, additionally removes when described structuring Insulating barrier (130) in the opening area (133) that described raceway groove etching area (131,132) is internal Part, constituted the protective layer of the described opening area of a covering (133) before performing described etching process (135), prevent from removing the backing material in described opening area (133) by described protective layer, and And remove described protective layer (135) after performing described etching process.

5. method as claimed in claim 1 or 2, wherein, described insulating barrier (130) is described Structuring in the form of a grill in raceway groove etching area (131).

6. method as claimed in claim 1 or 2, wherein, the composition of described metal level (150) Including constituting multiple layering.

7. method as claimed in claim 6, also includes: at least one in the plurality of layering point A part for layer is removed before another layering in constituting the plurality of layering.

8. method as claimed in claim 1 or 2, wherein, it is provided that there is on one side etching and stop The only substrate (120) of layer (138,139), and arrive described etching stopping layer (138,139) Shi Suoshu etching process terminates.

9. structural detail, has

Substrate (120)；

Plated through hole in described substrate (120), described including substrate area (125) and encirclement The channel structure (140) of substrate area (125)；

The structurized insulating barrier (130) being arranged on described substrate (120), described insulating barrier is at least The region of described channel structure (140) is removed；With

The metal level (150) being arranged on described insulating barrier (130), described channel structure (140) Closed by described metal level,

Wherein, described substrate area constitutes the conduction of described plated through hole together with described channel structure Ingredient and the ingredient of insulation.

10. structural detail as claimed in claim 9, wherein, described channel structure (140) is neighbour Connect and in the upper area of structurized insulating barrier (130) and in lower area, be respectively provided with the shape widened Shape (142,143).