CN102278254B - Special integrated circuit for motorbike ignitor and trigger input circuit - Google Patents
Special integrated circuit for motorbike ignitor and trigger input circuit Download PDFInfo
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- CN102278254B CN102278254B CN 201110205873 CN201110205873A CN102278254B CN 102278254 B CN102278254 B CN 102278254B CN 201110205873 CN201110205873 CN 201110205873 CN 201110205873 A CN201110205873 A CN 201110205873A CN 102278254 B CN102278254 B CN 102278254B
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Abstract
The invention discloses a special integrated circuit for a motorbike ignitor and a trigger input circuit. The special integrated circuit for the motorbike ignitor, disclosed by the invention, is characterized in that the trigger input circuit consists of a first MOS (Metal Oxide Semiconductor) field effect transistor, a third MOS field effect transistor-a ninth MOS field effect transistor, a diode, a pull-up resistor and a pull-down resistor; the pull-up resistor is connected with the pull-down resistor in series, the other end of the pull-up resistor is connected with an amplitude limit end, and the other end of the pull-down resistor is grounded; a substrate of the first MOS field effect transistor is connected with a power supply input terminal, the grid of the first MOS field effect transistor is connected with a connection node of the pull-up resistor and the pull-down resistor, one of the source and the drain of the first MOS field effect transistor is connected with the amplitude limit end, and the other one of the source and the drain of the MOS field effect transistor M1 is grounded. The invention has the advantages of abnormal protection function, simple and feasible process, low cost and strong anti-jamming capability; and furthermore, the cost of a system is reduced, and the reliabilities of the integrated circuit and the system are improved, thus the special integrated circuit and the trigger input circuit can be widely applied to an electronic ignitor of a motorbike.
Description
Technical field
The present invention relates to motorcycle ignition controller, be specifically related to a kind of trigger input circuit for the motor cycle ignitor specific integrated circuit, and relate to the motor cycle ignitor specific integrated circuit with this trigger input circuit.
Background technique
Motorcycle is the modern important traffic tool, and initial motorcycle engine all adopts the igniter of fixed lead angle, and this igniter can only make motor be in optimum Working under a certain specified conditions, can not Effective Raise motor operational efficiency; Progress along with technology, what application was maximum at present is to adopt simulation to advance the angie type ignition, it can be made adjustment to ignition advance angle according to the rotation speed change of motor, improve the motor operational efficiency, in actual applications, simulation is advanced the angie type ignition and has mostly been used a motorcycle ignition advance angle to adjust specific integrated circuit, it is complicated that but existing motorcycle ignition advance angle is adjusted the application circuit of specific integrated circuit, the outer member that needs is more, make the simulation of production advance angie type ignition cost high, volume is large, and when causing igniter imperfect earth when igniter plug and motorcycle bad connection, the easy spot failure igniter dedicated integrated circuit of high pressure that magnetogenerator charging winding produces is in order to address this problem, must connect 2 voltage-stabiliser tubes to ground at the amplitude limit end, cause cost to increase.
Summary of the invention
Adjust the shortcoming of the application circuit complexity of specific integrated circuit in order to solve existing motorcycle ignition advance angle, one of technical problem to be solved by this invention provides the motor cycle ignitor specific integrated circuit that a kind of cost is low, have trigger input circuit and abnormity protection function.
Two of technical problem to be solved by this invention provides that a kind of cost is low, and antijamming capability is strong, has the trigger input circuit that is used for the motor cycle ignitor specific integrated circuit of abnormity protection function.
In order to solve the problems of the technologies described above, according to first technological scheme of the present invention, a kind of motor cycle ignitor specific integrated circuit of the present invention, the power input that comprises supply power, grounding end, the first trigger impulse input end, the second trigger impulse input end, the amplitude limit end, the charging control end, the vibration end, control of discharge end and IGNITION CONTROL pulse output end and following circuit carried out integrated circuit, these circuit comprise: input buffer circuit, generating circuit from reference voltage, Waveform generating circuit, the advance angle processor logic, output driving circuit, trigger input circuit and comparator IC1～IC2;
Be characterized in: described trigger input circuit is made of the first metal-oxide-semiconductor field effect transistor, the 3rd metal-oxide-semiconductor field effect transistor～the 9th metal-oxide-semiconductor field effect transistor, diode, pull-up resistor, pull down resistor; The drain electrode of the drain electrode of described the 3rd metal-oxide-semiconductor field effect transistor and the 9th metal-oxide-semiconductor field effect transistor connects, and be connected to the positive input terminal of input buffer circuit, the source electrode of described the 3rd metal-oxide-semiconductor field effect transistor and substrate ground connection, the grid of described the 3rd metal-oxide-semiconductor field effect transistor be connected the source electrode of the 6th metal-oxide-semiconductor field effect transistor and connect and be connected to the first trigger impulse input end, the drain and gate ground connection of described the 6th metal-oxide-semiconductor field effect transistor, substrate connect power input; The source electrode of described the 9th metal-oxide-semiconductor field effect transistor and substrate connect the grounded-grid of power input, described the 9th metal-oxide-semiconductor field effect transistor; The source electrode of described the 8th metal-oxide-semiconductor field effect transistor and substrate connect the grounded-grid of power input, described the 8th metal-oxide-semiconductor field effect transistor; The drain electrode of the drain electrode of described the 4th metal-oxide-semiconductor field effect transistor and the 8th metal-oxide-semiconductor field effect transistor connects and is connected to the negative input end of input buffer circuit; The source electrode of described the 4th metal-oxide-semiconductor field effect transistor is connected the negative electrode of diode and is connected and be connected to the second trigger impulse input end with substrate, the source electrode of described the 7th metal-oxide-semiconductor field effect transistor is connected the grounded-grid of power input, described the 7th metal-oxide-semiconductor field effect transistor, described the 7th metal-oxide-semiconductor field effect transistor with substrate drain electrode and the grid of the 4th metal-oxide-semiconductor field effect transistor and drain electrode, the grid of the 5th metal-oxide-semiconductor field effect transistor connects, the source electrode of described the 5th metal-oxide-semiconductor field effect transistor and substrate ground connection, the plus earth of diode; Described pull-up resistor and pull down resistor are connected in series, and the other end of pull-up resistor connects amplitude limit end, the other end ground connection of pull down resistor; The substrate of described the first metal-oxide-semiconductor field effect transistor is connected to power input, the grid of the first metal-oxide-semiconductor field effect transistor is connected on the connected node of pull-up resistor and pull down resistor, the source electrode of the first metal-oxide-semiconductor field effect transistor with the drain electrode in a wherein end be connected the amplitude limit end, the other end ground connection.
The present invention consists of input generating positive and negative voltage amplitude limiter circuit with pull-up resistor, pull down resistor and first metal-oxide-semiconductor field effect transistor of outside input resistance R1 and IC interior, when igniter plug and motorcycle bad connection and when causing igniter imperfect earth, the high pressure that magnetic motor for motorcycle charging winding produces is no matter be that forward or negative voltage all make the first metal-oxide-semiconductor field effect transistor conducting, make the amplitude limit terminal voltage low, protected other metal-oxide-semiconductor field effect transistor of IC interior not damaged, therefore have abnormity protection function, further improved the reliability of intergrated circuit and system; And ground connection after the amplitude limit end does not need again with 2 voltage-stabiliser tube series connection can further be reduced product cost.
According to a preferred version of a kind of motorcycle in-coming angle igniter dedicated integrated circuit of the present invention, between power input and grounding end, be connected voltage-stabiliser tube, can make external circuit reduce by a voltage-stabiliser tube.
According to another preferred version of a kind of motorcycle in-coming angle igniter dedicated integrated circuit of the present invention, described the first metal-oxide-semiconductor field effect transistor is the P-channel enhancement type metal-oxide-semiconductor field effect transistor.
According to another preferred version of a kind of motorcycle in-coming angle igniter dedicated integrated circuit of the present invention, described the 3rd metal-oxide-semiconductor field effect transistor～the 5th metal-oxide-semiconductor field effect transistor is N channel enhancement metal-oxide-semiconductor field effect transistor; Described the 6th metal-oxide-semiconductor field effect transistor～the 9th metal-oxide-semiconductor field effect transistor is the P-channel enhancement type metal-oxide-semiconductor field effect transistor.
According to second technological scheme of the present invention, a kind of trigger input circuit of motor cycle ignitor specific integrated circuit is characterized in: described trigger input circuit is made of the first metal-oxide-semiconductor field effect transistor, the 3rd metal-oxide-semiconductor field effect transistor～the 9th metal-oxide-semiconductor field effect transistor, diode, pull-up resistor, pull down resistor; The drain electrode of the drain electrode of described the 3rd metal-oxide-semiconductor field effect transistor and the 9th metal-oxide-semiconductor field effect transistor connects, and be connected to the positive input terminal of input buffer circuit, the source electrode of described the 3rd metal-oxide-semiconductor field effect transistor and substrate ground connection, the grid of described the 3rd metal-oxide-semiconductor field effect transistor be connected the source electrode of the 6th metal-oxide-semiconductor field effect transistor and connect and be connected to the first trigger impulse input end, the drain and gate ground connection of described the 6th metal-oxide-semiconductor field effect transistor, substrate connect power input; The source electrode of described the 9th metal-oxide-semiconductor field effect transistor and substrate connect the grounded-grid of power input, described the 9th metal-oxide-semiconductor field effect transistor; The source electrode of described the 8th metal-oxide-semiconductor field effect transistor and substrate connect the grounded-grid of power input, described the 8th metal-oxide-semiconductor field effect transistor; The drain electrode of the drain electrode of described the 4th metal-oxide-semiconductor field effect transistor and the 8th metal-oxide-semiconductor field effect transistor connects and is connected to the negative input end of input buffer circuit; The source electrode of described the 4th metal-oxide-semiconductor field effect transistor is connected the negative electrode of diode and is connected and be connected to the second trigger impulse input end with substrate, the source electrode of described the 7th metal-oxide-semiconductor field effect transistor is connected the grounded-grid of power input, described the 7th metal-oxide-semiconductor field effect transistor, described the 7th metal-oxide-semiconductor field effect transistor with substrate drain electrode and the grid of the 4th metal-oxide-semiconductor field effect transistor and drain electrode, the grid of the 5th metal-oxide-semiconductor field effect transistor connects, the source electrode of described the 5th metal-oxide-semiconductor field effect transistor and substrate ground connection, the plus earth of diode; Described pull-up resistor and pull down resistor are connected in series, and the other end of pull-up resistor connects amplitude limit end, the other end ground connection of pull down resistor; The substrate of described the first metal-oxide-semiconductor field effect transistor is connected to power input, the grid of the first metal-oxide-semiconductor field effect transistor is connected on the connected node of pull-up resistor and pull down resistor, the source electrode of the first metal-oxide-semiconductor field effect transistor with the drain electrode in a wherein end be connected the amplitude limit end, the other end ground connection.
According to another preferred version of the trigger input circuit of a kind of motor cycle ignitor specific integrated circuit of the present invention, between power input and grounding end, be connected voltage-stabiliser tube.
According to another preferred version of trigger input circuit of a kind of motor cycle ignitor specific integrated circuit of the present invention, described the first metal-oxide-semiconductor field effect transistor is the P-channel enhancement type metal-oxide-semiconductor field effect transistor.
According to another preferred version of trigger input circuit of a kind of motor cycle ignitor specific integrated circuit of the present invention, described the 3rd metal-oxide-semiconductor field effect transistor～the 5th metal-oxide-semiconductor field effect transistor is N channel enhancement metal-oxide-semiconductor field effect transistor; Described the 6th metal-oxide-semiconductor field effect transistor～the 9th metal-oxide-semiconductor field effect transistor is the P-channel enhancement type metal-oxide-semiconductor field effect transistor.
Motorcycle ignition advance angle of the present invention is adjusted specific integrated circuit, and the external trigger input circlult is further integrated, improve the reliability of system and further reduced system cost, has the technique simple possible, use the advantage that outer member is few, cost is low, antijamming capability is strong convenient, that need, motorcycle idea igniter be can be widely used in, transistor type ignition and capacitive-discharge type electronic ignitor comprised.
The trigger input circuit design of a kind of motor cycle ignitor specific integrated circuit of the present invention is ingenious, utilize the source electrode of metal-oxide-semiconductor field effect transistor and the symmetry properties of drain electrode at the amplitude limit end, make the present invention have abnormity protection function, when namely causing igniter imperfect earth when appearance point firearm plug and motorcycle bad connection, the present invention is can the inner metal-oxide-semiconductor field effect transistor of Protective IC not damaged; Further improve the reliability of intergrated circuit and system, further reduced system cost; Simultaneously the present invention has the technique simple possible, and cost is low, and the advantage that antijamming capability is strong can be widely used in having higher economic benefit in the motorcycle idea igniter.
Description of drawings
Fig. 1 is a kind of motor cycle ignitor specific integrated circuit principle block diagram of the present invention.
Fig. 2 is the external circuit figure of a kind of motor cycle ignitor specific integrated circuit of the present invention.
Embodiment
Referring to Fig. 1 and Fig. 2, a kind of motor cycle ignitor specific integrated circuit, power input VDD by supply power, the first trigger impulse input end IN1, the second trigger impulse input end IN2, amplitude limit end VZ, charging control end RF, vibration end CT, control of discharge end RC, IGNITION CONTROL pulse output end OUT, grounding end GND and to input buffer circuit 1, generating circuit from reference voltage 2, Waveform generating circuit 3, advance angle processor logic 4, output driving circuit 5, comparator IC1, IC2, trigger input circuit 6 carries out integrated circuit and consists of, the input end of described trigger input circuit 6 connects the first trigger impulse input end IN1, the second trigger impulse input end IN2 and amplitude limit end VZ, the negative input end INN of described input buffer circuit 1 connects the negative output terminal OUT2 of trigger input circuit 6, the positive input terminal IN P of input buffer circuit 1 connects the positive output end OUT1 of trigger input circuit 6, an output terminal of input buffer circuit 1 connects the first input end of Waveform generating circuit 3, another output terminal of input buffer circuit 1 connects the first input end of advance angle processor logic 4, the positive input terminal of comparator IC1 is connected negative input end and is connected the output terminal of Waveform generating circuit 3 with comparator IC2, the negative input end of comparator IC1 connects an output terminal of generating circuit from reference voltage 2, the positive input terminal of comparator IC2 connects another output terminal of generating circuit from reference voltage 2, comparator IC1, the output terminal of IC2 connects respectively the second input end and the 3rd input end of advance angle processor logic 4, the output terminal of advance angle processor logic 4 connects respectively reference waveform and produces the second input end of circuit 3 and the input end of output driving circuit 5, the output terminal of output driving circuit 5 connects IGNITION CONTROL pulse output end OUT, a control end of Waveform generating circuit 3 connects charging control end RF, second control end of Waveform generating circuit 3 connects vibration end CT, and the 3rd control end of Waveform generating circuit 3 connects control of discharge end RC; Described trigger input circuit 6 receives the trigger signal that magnetogenerator trigger winding L2 produces, to the positive pulse of trigger signal with output to input buffer circuit 1 after negative impulse is separated, trigger signal after 1 pair of separation of input buffer circuit is carried out shaping, output to Waveform generating circuit 3 and advance angle processor logic 4 after the de-noising, generating circuit from reference voltage 2 output reference voltage V1 are to the negative input end of comparator IC1, generating circuit from reference voltage 2 output reference voltage V2 are to the positive input terminal IC2 of comparator IC2, the negative input end of the positive input terminal of comparator IC1 and comparator IC2 receives the pulse that discharges and recharges of Waveform generating circuit 3 outputs simultaneously, comparator IC1, IC2 outputs a control signal to advance angle processor logic 4, advance angle processor logic 4 is subjected to input buffer circuit 1, comparator IC1, the control of IC2, output igniting positive pulse is to output driving circuit 5, and advance angle processor logic 4 is also exported control signal to Waveform generating circuit 3 simultaneously.
Wherein, described trigger input circuit 6 is made of the first metal-oxide-semiconductor field effect transistor M1, the 3rd metal-oxide-semiconductor field effect transistor M3～the 9th metal-oxide-semiconductor field effect transistor M9, diode D11, pull-up resistor R20, pull down resistor R21; The drain electrode of the drain electrode of described the 3rd metal-oxide-semiconductor field effect transistor M3 and the 9th metal-oxide-semiconductor field effect transistor M9 connects, and be connected to the positive input terminal INP of input buffer circuit 1, the source electrode of described the 3rd metal-oxide-semiconductor field effect transistor M3 and substrate ground connection, the grid of described the 3rd metal-oxide-semiconductor field effect transistor M3 be connected the source electrode of the 6th metal-oxide-semiconductor field effect transistor M6 and connect and be connected to the first trigger impulse input end IN1, drain and gate ground connection, the substrate of described the 6th metal-oxide-semiconductor field effect transistor M6 meet power input VDD; The source electrode of described the 9th metal-oxide-semiconductor field effect transistor M9 and substrate connect the grounded-grid of power input VDD, described the 9th metal-oxide-semiconductor field effect transistor M9; The source electrode of described the 8th metal-oxide-semiconductor field effect transistor M8 and substrate connect the grounded-grid of power input VDD, described the 8th metal-oxide-semiconductor field effect transistor M8; The drain electrode of the drain electrode of described the 4th metal-oxide-semiconductor field effect transistor M4 and the 8th metal-oxide-semiconductor field effect transistor M8 connects and is connected to the negative input end INN of input buffer circuit 1; The source electrode of described the 4th metal-oxide-semiconductor field effect transistor M4 is connected the negative electrode of diode D11 and is connected and be connected to the second trigger impulse input end IN2 with substrate, the source electrode of described the 7th metal-oxide-semiconductor field effect transistor M7 meets the grounded-grid of power input VDD, described the 7th metal-oxide-semiconductor field effect transistor M7, described the 7th metal-oxide-semiconductor field effect transistor M7 with substrate drain electrode and the grid of the 4th metal-oxide-semiconductor field effect transistor M4 and drain electrode, the grid of the 5th metal-oxide-semiconductor field effect transistor M5 connects, the source electrode of described the 5th metal-oxide-semiconductor field effect transistor M5 and substrate ground connection, the plus earth of diode D11; Described pull-up resistor R20 and pull down resistor R21 are connected in series, and the other end of pull-up resistor R20 connects amplitude limit end VZ, the other end ground connection of pull down resistor R21; The substrate of described the first metal-oxide-semiconductor field effect transistor M1 is connected to power input VDD, the grid of the first metal-oxide-semiconductor field effect transistor M1 is connected on the connected node of pull-up resistor R20 and pull down resistor R21, the source electrode of the first metal-oxide-semiconductor field effect transistor M1 with the drain electrode in a wherein end be connected amplitude limit end VZ, the other end ground connection; Simultaneously, between power input VDD and grounding end GND, be connected voltage-stabiliser tube Z5; Wherein, described the 3rd metal-oxide-semiconductor field effect transistor M3～M5 is N channel enhancement metal-oxide-semiconductor field effect transistor; Described the first metal-oxide-semiconductor field effect transistor M1, the 6th metal-oxide-semiconductor field effect transistor M6～the 9th metal-oxide-semiconductor field effect transistor M9 is the P-channel enhancement type metal-oxide-semiconductor field effect transistor.
A kind of trigger input circuit of motor cycle ignitor specific integrated circuit, described trigger input circuit 6 is made of the first metal-oxide-semiconductor field effect transistor M1, the 3rd metal-oxide-semiconductor field effect transistor M3～the 9th metal-oxide-semiconductor field effect transistor M9, diode D11, pull-up resistor R20, pull down resistor R21; The drain electrode of the drain electrode of described the 3rd metal-oxide-semiconductor field effect transistor M3 and the 9th metal-oxide-semiconductor field effect transistor M9 connects, and be connected to the positive input terminal INP of input buffer circuit 1, the source electrode of described the 3rd metal-oxide-semiconductor field effect transistor M3 and substrate ground connection, the grid of described the 3rd metal-oxide-semiconductor field effect transistor M3 be connected the source electrode of the 6th metal-oxide-semiconductor field effect transistor M6 and connect and be connected to the first trigger impulse input end IN1, drain and gate ground connection, the substrate of described the 6th metal-oxide-semiconductor field effect transistor M6 meet power input VDD; The source electrode of described the 9th metal-oxide-semiconductor field effect transistor M9 and substrate connect the grounded-grid of power input VDD, described the 9th metal-oxide-semiconductor field effect transistor M9; The source electrode of described the 8th metal-oxide-semiconductor field effect transistor M8 and substrate connect the grounded-grid of power input VDD, described the 8th metal-oxide-semiconductor field effect transistor M8; The drain electrode of the drain electrode of described the 4th metal-oxide-semiconductor field effect transistor M4 and the 8th metal-oxide-semiconductor field effect transistor M8 connects and is connected to the negative input end INN of input buffer circuit 1; The source electrode of described the 4th metal-oxide-semiconductor field effect transistor M4 is connected the negative electrode of diode D11 and is connected and be connected to the second trigger impulse input end IN2 with substrate, the source electrode of described the 7th metal-oxide-semiconductor field effect transistor M7 meets the grounded-grid of power input VDD, described the 7th metal-oxide-semiconductor field effect transistor M7, described the 7th metal-oxide-semiconductor field effect transistor M7 with substrate drain electrode and the grid of the 4th metal-oxide-semiconductor field effect transistor M4 and drain electrode, the grid of the 5th metal-oxide-semiconductor field effect transistor M5 connects, the source electrode of described the 5th metal-oxide-semiconductor field effect transistor M5 and substrate ground connection, the plus earth of diode D11; Described pull-up resistor R20 and pull down resistor R21 are connected in series, and the other end of pull-up resistor R20 connects amplitude limit end VZ, the other end ground connection of pull down resistor R21; The substrate of described the first metal-oxide-semiconductor field effect transistor M1 is connected to power input VDD, the grid of the first metal-oxide-semiconductor field effect transistor M1 is connected on the connected node of pull-up resistor R20 and pull down resistor R21, the source electrode of the first metal-oxide-semiconductor field effect transistor M1 with the drain electrode in a wherein end be connected amplitude limit end VZ, the other end ground connection; Simultaneously, between power input VDD and grounding end GND, be connected voltage-stabiliser tube Z5; Wherein, described the 3rd metal-oxide-semiconductor field effect transistor M3～the 5th metal-oxide-semiconductor field effect transistor M5 is N channel enhancement metal-oxide-semiconductor field effect transistor; Described the first metal-oxide-semiconductor field effect transistor M1, the 6th metal-oxide-semiconductor field effect transistor M6～the 9th metal-oxide-semiconductor field effect transistor M9 is the P-channel enhancement type metal-oxide-semiconductor field effect transistor.
Described source electrode with the first metal-oxide-semiconductor field effect transistor M1 is connected amplitude limit end VZ, the other end ground connection with a wherein end in the drain electrode; In the specific implementation, the source electrode of the first metal-oxide-semiconductor field effect transistor M1 can be connected amplitude limit end VZ, grounded drain; Also the drain electrode of the first metal-oxide-semiconductor field effect transistor M1 can be connected amplitude limit end VZ, source ground.
Referring to Fig. 2, the working principle of motorcycle in-coming angle igniter dedicated integrated circuit and trigger input circuit 6 is:
Pull-up resistor R20, the pull down resistor R21 of outside input resistance R1 and IC interior and the first metal-oxide-semiconductor field effect transistor M1 consist of input generating positive and negative voltage amplitude limiter circuit.
When the positive pulse of input sensor signal arrives:
The source electrode of the first metal-oxide-semiconductor field effect transistor M1 meets amplitude limit end VZ, and grounded drain, amplitude limit end VZ voltage be for just, the grid voltage VG=V of the first metal-oxide-semiconductor field effect transistor M1
Z* R21/R20+R21; Wherein, V
ZThe voltage of amplitude limit end VZ, lower same;
When | VGS|=| VG-V
Z|=V
Z* R20/R20+R21〉| during VTP|, the first metal-oxide-semiconductor field effect transistor M1 conducting, restriction amplitude limit end VZ positive voltage rises; Wherein, VTP is the threshold voltage of the first metal-oxide-semiconductor field effect transistor M1, and VGS is the gate source voltage of the first metal-oxide-semiconductor field effect transistor M1, and is lower same;
When the negative impulse of input sensor signal arrives:
The source ground of the first metal-oxide-semiconductor field effect transistor M1, drain electrode meets amplitude limit end VZ, and amplitude limit end VZ voltage is negative-gate voltage, VG=V
Z* R21/R20+R21;
When | VGS|=| V
Z| * R21/R20+R21〉| during VTP|, the first metal-oxide-semiconductor field effect transistor M1 conducting, restriction amplitude limit end VZ negative voltage descends.
When amplitude limit end VZ positive voltage amplitude is low, V
Z＜| VTP|*R20+R21/R20, the first not conducting of metal-oxide-semiconductor field effect transistor M1 does not have the amplitude limit effect to the input positive pulse signal; When amplitude limit end VZ negative voltage amplitude is low, | VZ|＜| VTP|*R20+R21/R21, the first not conducting of metal-oxide-semiconductor field effect transistor M1 does not have the amplitude limit effect to the input undershoot.
When concrete the application; when appearance point firearm plug and motorcycle bad connection and when causing igniter imperfect earth; the high pressure that magnetogenerator charging winding produces makes the first metal-oxide-semiconductor field effect transistor M1 conducting; amplitude limit end VZ voltage is low; protect other metal-oxide-semiconductor field effect transistor of IC interior not damaged, further improved reliability.
The present invention compares with patent ZL2007100930104, and the present invention has abnormity protection function, has further improved reliability, and ground connection after amplitude limit end VZ does not need again with 2 voltage-stabiliser tube series connection can further be reduced product cost; Simultaneously, cancel a metal-oxide-semiconductor field effect transistor at IC interior, simplified design, made the preparation process of intergrated circuit simpler, increased a voltage-stabiliser tube at IC interior, further reduced peripheral cell.
Claims (8)
1. motor cycle ignitor specific integrated circuit, the power input (VDD) that comprises supply power, grounding end (GND), the first trigger impulse input end (IN1), the second trigger impulse input end (IN2), amplitude limit end (VZ), charging control end (RF), vibration end (CT), control of discharge end (RC) and IGNITION CONTROL pulse output end (OUT) and following circuit carried out integrated circuit, these circuit comprise: input buffer circuit (1), generating circuit from reference voltage (2), Waveform generating circuit (3), advance angle processor logic (4), output driving circuit (5), trigger input circuit (6) and comparator (IC1～IC2);
It is characterized in that: described trigger input circuit (6) is made of the first metal-oxide-semiconductor field effect transistor (M1), the 3rd metal-oxide-semiconductor field effect transistor (M3)～the 9th metal-oxide-semiconductor field effect transistor (M9), diode (D11), pull-up resistor (R20), pull down resistor (R21); The drain electrode of the drain electrode of described the 3rd metal-oxide-semiconductor field effect transistor (M3) and the 9th metal-oxide-semiconductor field effect transistor (M9) connects, and be connected to the positive input terminal (INP) of input buffer circuit (1), the source electrode of described the 3rd metal-oxide-semiconductor field effect transistor (M3) and substrate ground connection, the grid of described the 3rd metal-oxide-semiconductor field effect transistor (M3) be connected the source electrode of the 6th metal-oxide-semiconductor field effect transistor (M6) and connect and be connected to the first trigger impulse input end (IN1), drain and gate ground connection, the substrate of described the 6th metal-oxide-semiconductor field effect transistor (M6) connects power input (VDD); The source electrode of described the 9th metal-oxide-semiconductor field effect transistor (M9) and substrate connect the grounded-grid of power input (VDD), described the 9th metal-oxide-semiconductor field effect transistor (M9); The source electrode of described the 8th metal-oxide-semiconductor field effect transistor (M8) and substrate connect the grounded-grid of power input (VDD), described the 8th metal-oxide-semiconductor field effect transistor (M8); The drain electrode of the drain electrode of described the 4th metal-oxide-semiconductor field effect transistor (M4) and the 8th metal-oxide-semiconductor field effect transistor (M8) connects and is connected to the negative input end (INN) of input buffer circuit (1); The source electrode of described the 4th metal-oxide-semiconductor field effect transistor (M4) is connected the negative electrode of diode (D11) and is connected and be connected to the second trigger impulse input end (IN2) with substrate, the source electrode of described the 7th metal-oxide-semiconductor field effect transistor (M7) and substrate connect power input (VDD), the grounded-grid of described the 7th metal-oxide-semiconductor field effect transistor (M7), the drain electrode of the grid of the drain electrode of described the 7th metal-oxide-semiconductor field effect transistor (M7) and the 4th metal-oxide-semiconductor field effect transistor (M4) and the 5th metal-oxide-semiconductor field effect transistor (M5), grid connects, the source electrode of described the 5th metal-oxide-semiconductor field effect transistor (M5) and substrate ground connection, the plus earth of diode (D11); Described pull-up resistor (R20) is connected in series with pull down resistor (R21), and the other end of pull-up resistor (R20) connects amplitude limit end (VZ), the other end ground connection of pull down resistor (R21); The substrate of described the first metal-oxide-semiconductor field effect transistor (M1) is connected to power input (VDD), the grid of the first metal-oxide-semiconductor field effect transistor (M1) is connected on the connected node of pull-up resistor (R20) and pull down resistor (R21), the source electrode of the first metal-oxide-semiconductor field effect transistor (M1) with the drain electrode in a wherein end be connected amplitude limit end (VZ), the other end ground connection.
2. a kind of motor cycle ignitor specific integrated circuit according to claim 1 is characterized in that: be connected voltage-stabiliser tube (Z5) between power input (VDD) and grounding end (GND).
3. a kind of motor cycle ignitor specific integrated circuit according to claim 1 and 2, it is characterized in that: described the first metal-oxide-semiconductor field effect transistor (M1) is the P-channel enhancement type metal-oxide-semiconductor field effect transistor.
4. a kind of motor cycle ignitor specific integrated circuit according to claim 3, it is characterized in that: described the 3rd metal-oxide-semiconductor field effect transistor (M3)～the 5th metal-oxide-semiconductor field effect transistor (M5) is N channel enhancement metal-oxide-semiconductor field effect transistor; Described the 6th metal-oxide-semiconductor field effect transistor (M6)～the 9th metal-oxide-semiconductor field effect transistor (M9) is the P-channel enhancement type metal-oxide-semiconductor field effect transistor.
5. the trigger input circuit of a motor cycle ignitor specific integrated circuit is characterized in that: described trigger input circuit (6) is made of the first metal-oxide-semiconductor field effect transistor (M1), the 3rd metal-oxide-semiconductor field effect transistor (M3)～the 9th metal-oxide-semiconductor field effect transistor (M9), diode (D11), pull-up resistor (R20), pull down resistor (R21); The drain electrode of the drain electrode of described the 3rd metal-oxide-semiconductor field effect transistor (M3) and the 9th metal-oxide-semiconductor field effect transistor (M9) connects, and be connected to the positive input terminal (INP) of input buffer circuit (1), the source electrode of described the 3rd metal-oxide-semiconductor field effect transistor (M3) and substrate ground connection, the grid of described the 3rd metal-oxide-semiconductor field effect transistor (M3) be connected the source electrode of the 6th metal-oxide-semiconductor field effect transistor (M6) and connect and be connected to the first trigger impulse input end (IN1), drain and gate ground connection, the substrate of described the 6th metal-oxide-semiconductor field effect transistor (M6) connects power input (VDD); The source electrode of described the 9th metal-oxide-semiconductor field effect transistor (M9) and substrate connect the grounded-grid of power input (VDD), described the 9th metal-oxide-semiconductor field effect transistor (M9); The source electrode of described the 8th metal-oxide-semiconductor field effect transistor (M8) and substrate connect the grounded-grid of power input (VDD), described the 8th metal-oxide-semiconductor field effect transistor (M8); The drain electrode of the drain electrode of described the 4th metal-oxide-semiconductor field effect transistor (M4) and the 8th metal-oxide-semiconductor field effect transistor (M8) connects and is connected to the negative input end (INN) of input buffer circuit (1); The source electrode of described the 4th metal-oxide-semiconductor field effect transistor (M4) is connected the negative electrode of diode (D11) and is connected and be connected to the second trigger impulse input end (IN2) with substrate, the source electrode of described the 7th metal-oxide-semiconductor field effect transistor (M7) and substrate connect power input (VDD), the grounded-grid of described the 7th metal-oxide-semiconductor field effect transistor (M7), the drain electrode of the grid of the drain electrode of described the 7th metal-oxide-semiconductor field effect transistor (M7) and the 4th metal-oxide-semiconductor field effect transistor (M4) and the 5th metal-oxide-semiconductor field effect transistor (M5), grid connects, the source electrode of described the 5th metal-oxide-semiconductor field effect transistor (M5) and substrate ground connection, the plus earth of diode (D11); Described pull-up resistor (R20) is connected in series with pull down resistor (R21), and the other end of pull-up resistor (R20) connects amplitude limit end (VZ), the other end ground connection of pull down resistor (R21); The substrate of described the first metal-oxide-semiconductor field effect transistor (M1) is connected to power input (VDD), the grid of the first metal-oxide-semiconductor field effect transistor (M1) is connected on the connected node of pull-up resistor (R20) and pull down resistor (R21), the source electrode of the first metal-oxide-semiconductor field effect transistor (M1) with the drain electrode in a wherein end be connected amplitude limit end (VZ), the other end ground connection.
6. the trigger input circuit of a kind of motor cycle ignitor specific integrated circuit according to claim 5 is characterized in that: be connected voltage-stabiliser tube (Z5) between power input (VDD) and grounding end (GND).
7. according to claim 5 or the trigger input circuit of 6 described a kind of motor cycle ignitor specific integrated circuit, it is characterized in that: described the first metal-oxide-semiconductor field effect transistor (M1) is the P-channel enhancement type metal-oxide-semiconductor field effect transistor.
8. the trigger input circuit of a kind of motor cycle ignitor specific integrated circuit according to claim 7, it is characterized in that: described the 3rd metal-oxide-semiconductor field effect transistor (M3)～the 5th metal-oxide-semiconductor field effect transistor (M5) is N channel enhancement metal-oxide-semiconductor field effect transistor; Described the 6th metal-oxide-semiconductor field effect transistor (M6)～the 9th metal-oxide-semiconductor field effect transistor (M9) is the P-channel enhancement type metal-oxide-semiconductor field effect transistor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201110205873 CN102278254B (en) | 2011-07-22 | 2011-07-22 | Special integrated circuit for motorbike ignitor and trigger input circuit |
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| CN 201110205873 CN102278254B (en) | 2011-07-22 | 2011-07-22 | Special integrated circuit for motorbike ignitor and trigger input circuit |
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| CN102278254B true CN102278254B (en) | 2013-03-27 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106027012B (en) * | 2016-06-13 | 2023-05-05 | 达凯(上海)电子科技有限公司 | Pull-down resistor switch circuit |
| CN106762326B (en) * | 2016-11-09 | 2018-07-20 | 重庆三信电子股份有限公司 | A kind of motorcycle DC ignitor and application-specific integrated circuit |
Citations (4)
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|---|---|---|---|---|
| EP0173766A2 (en) * | 1984-09-05 | 1986-03-12 | Oppama Kogyo Kabushiki Kaisha | Start safety apparatus for internal combustion engine |
| CN2680889Y (en) * | 2004-02-06 | 2005-02-23 | 重庆三信电子有限公司 | Upgradable digital flame lighter of motorcycle engine |
| CN101169093A (en) * | 2007-11-21 | 2008-04-30 | 重庆三信电子有限公司 | Motorcycle in-coming angle igniter dedicated integrated circuit and trigger input circuit |
| CN201090345Y (en) * | 2007-10-30 | 2008-07-23 | 重庆工学院 | Digital type motorcycle CDI igniter |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0726605B2 (en) * | 1987-06-11 | 1995-03-29 | 国産電機株式会社 | Capacitor discharge type internal combustion engine ignition device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0173766A2 (en) * | 1984-09-05 | 1986-03-12 | Oppama Kogyo Kabushiki Kaisha | Start safety apparatus for internal combustion engine |
| CN2680889Y (en) * | 2004-02-06 | 2005-02-23 | 重庆三信电子有限公司 | Upgradable digital flame lighter of motorcycle engine |
| CN201090345Y (en) * | 2007-10-30 | 2008-07-23 | 重庆工学院 | Digital type motorcycle CDI igniter |
| CN101169093A (en) * | 2007-11-21 | 2008-04-30 | 重庆三信电子有限公司 | Motorcycle in-coming angle igniter dedicated integrated circuit and trigger input circuit |
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