CN102277242A - Cleaning agent composition - Google Patents
Cleaning agent composition Download PDFInfo
- Publication number
- CN102277242A CN102277242A CN201110170337A CN201110170337A CN102277242A CN 102277242 A CN102277242 A CN 102277242A CN 201110170337 A CN201110170337 A CN 201110170337A CN 201110170337 A CN201110170337 A CN 201110170337A CN 102277242 A CN102277242 A CN 102277242A
- Authority
- CN
- China
- Prior art keywords
- cleansing composition
- acid
- methyl
- ether
- benzotriazole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 83
- 239000012459 cleaning agent Substances 0.000 title abstract 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 24
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 12
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical class OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000004973 liquid crystal related substance Substances 0.000 claims description 26
- 238000004140 cleaning Methods 0.000 claims description 24
- -1 glycol ether compound Chemical class 0.000 claims description 21
- 210000002858 crystal cell Anatomy 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 14
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 10
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 9
- JJJOZVFVARQUJV-UHFFFAOYSA-N 2-ethylhexylphosphonic acid Chemical compound CCCCC(CC)CP(O)(O)=O JJJOZVFVARQUJV-UHFFFAOYSA-N 0.000 claims description 8
- AIDLAEPHWROGFI-UHFFFAOYSA-N 2-methylbenzene-1,3-dicarboxylic acid Chemical compound CC1=C(C(O)=O)C=CC=C1C(O)=O AIDLAEPHWROGFI-UHFFFAOYSA-N 0.000 claims description 8
- JKTORXLUQLQJCM-UHFFFAOYSA-N 4-phosphonobutylphosphonic acid Chemical compound OP(O)(=O)CCCCP(O)(O)=O JKTORXLUQLQJCM-UHFFFAOYSA-N 0.000 claims description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 5
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 4
- UTCHNZLBVKHYKC-UHFFFAOYSA-N 2-hydroxy-2-phosphonoacetic acid Chemical compound OC(=O)C(O)P(O)(O)=O UTCHNZLBVKHYKC-UHFFFAOYSA-N 0.000 claims description 4
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 4
- 150000007524 organic acids Chemical class 0.000 claims description 4
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 4
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 claims description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 3
- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 claims description 3
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 3
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 3
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 3
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 3
- OTJFQRMIRKXXRS-UHFFFAOYSA-N (hydroxymethylamino)methanol Chemical compound OCNCO OTJFQRMIRKXXRS-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- MXYOPVWZZKEAGX-UHFFFAOYSA-N 1-phosphonoethylphosphonic acid Chemical compound OP(=O)(O)C(C)P(O)(O)=O MXYOPVWZZKEAGX-UHFFFAOYSA-N 0.000 claims description 2
- OLQJQHSAWMFDJE-UHFFFAOYSA-N 2-(hydroxymethyl)-2-nitropropane-1,3-diol Chemical compound OCC(CO)(CO)[N+]([O-])=O OLQJQHSAWMFDJE-UHFFFAOYSA-N 0.000 claims description 2
- YEFTZJCPZRYCIG-UHFFFAOYSA-N 2-[(4-ethylbenzotriazol-1-yl)methyl-(2-hydroxyethyl)amino]ethanol Chemical compound CCC1=CC=CC2=C1N=NN2CN(CCO)CCO YEFTZJCPZRYCIG-UHFFFAOYSA-N 0.000 claims description 2
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 2
- UXFQFBNBSPQBJW-UHFFFAOYSA-N 2-amino-2-methylpropane-1,3-diol Chemical compound OCC(N)(C)CO UXFQFBNBSPQBJW-UHFFFAOYSA-N 0.000 claims description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 claims description 2
- 229940120146 EDTMP Drugs 0.000 claims description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 2
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims description 2
- 125000002252 acyl group Chemical group 0.000 claims description 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims description 2
- 125000003545 alkoxy group Chemical group 0.000 claims description 2
- 125000003282 alkyl amino group Chemical group 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 claims description 2
- 239000012964 benzotriazole Substances 0.000 claims description 2
- BMRWNKZVCUKKSR-UHFFFAOYSA-N butane-1,2-diol Chemical compound CCC(O)CO BMRWNKZVCUKKSR-UHFFFAOYSA-N 0.000 claims description 2
- 235000019437 butane-1,3-diol Nutrition 0.000 claims description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 claims description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 2
- 125000004181 carboxyalkyl group Chemical group 0.000 claims description 2
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 2
- 125000000753 cycloalkyl group Chemical group 0.000 claims description 2
- YMHQVDAATAEZLO-UHFFFAOYSA-N cyclohexane-1,1-diamine Chemical compound NC1(N)CCCCC1 YMHQVDAATAEZLO-UHFFFAOYSA-N 0.000 claims description 2
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 2
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 125000000623 heterocyclic group Chemical group 0.000 claims description 2
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 2
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 claims description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 2
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 claims description 2
- 229920000151 polyglycol Polymers 0.000 claims description 2
- 239000010695 polyglycol Substances 0.000 claims description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 2
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 claims description 2
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 2
- 229940058015 1,3-butylene glycol Drugs 0.000 claims 1
- 150000007514 bases Chemical class 0.000 abstract 1
- 125000000168 pyrrolyl group Chemical group 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 38
- 239000010949 copper Substances 0.000 description 27
- 239000004642 Polyimide Substances 0.000 description 17
- 229920001721 polyimide Polymers 0.000 description 17
- 239000002184 metal Substances 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 15
- 238000009736 wetting Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 230000002950 deficient Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000000149 penetrating effect Effects 0.000 description 5
- 229910021642 ultra pure water Inorganic materials 0.000 description 5
- 239000012498 ultrapure water Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 230000003204 osmotic effect Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- SZHQPBJEOCHCKM-UHFFFAOYSA-N 2-phosphonobutane-1,2,4-tricarboxylic acid Chemical compound OC(=O)CCC(P(O)(O)=O)(C(O)=O)CC(O)=O SZHQPBJEOCHCKM-UHFFFAOYSA-N 0.000 description 1
- 229910000897 Babbitt (metal) Inorganic materials 0.000 description 1
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 239000002957 persistent organic pollutant Substances 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- XTUSEBKMEQERQV-UHFFFAOYSA-N propan-2-ol;hydrate Chemical compound O.CC(C)O XTUSEBKMEQERQV-UHFFFAOYSA-N 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/36—Organic compounds containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D11/00—Special methods for preparing compositions containing mixtures of detergents
- C11D11/0094—Process for making liquid detergent compositions, e.g. slurries, pastes or gels
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/266—Esters or carbonates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1316—Methods for cleaning the liquid crystal cells, or components thereof, during manufacture: Materials therefor
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Detergent Compositions (AREA)
- Liquid Crystal (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
The invention discloses a cleaning agent composition containing no basic compounds. The composition comprises, based on the total weight of the composition, 0.1-15 weight percent of C1-C5 low alcohol, 0.1-15 weight percent of water-soluble glycol ether compounds, 0.01-10 weight percent of organic phosphoric acid, 0.001-10 weight percent of pyrrolyl compounds and the remaining water.
Description
Technical field
The present invention relates to a kind of cleansing composition.
The application requires the rights and interests of the korean patent application 10-2010-0055632 of submission on June 1st, 2010, by quoting it is incorporated among the application in full.
Background technology
Usually, in the manufacturing of liquid crystal cells, polyimide (PI) is painted on two patterned substrates with electrode pattern so that is endowed the function of oriented layer and insulation layer, and its upper surface stands friction in predetermined direction, thereby forms oriented layer.Afterwards, be used for controlling liquid crystal cell thickness seal tackiness agent and barrier sheet is configured between the substrate, so this two plate base combines togather.According to this, if pollutent remains on the oriented layer substrate, inject liquid crystal thereon, very difficult acquisition is display screen clearly, and the packing defective may non-ly desirably produce.Therefore, need be with cleaning to remove pollutent from substrate.
When making the liquid crystal cells of liquid-crystal display (LCDs), isolating impurity in the friction cloth that uses in the friction process before the contamination sources of substrate may be included in two PI substrates or PI particle combined, and may be attached on the substrate, the non-defective that desirably causes.Removing of this pollutent that produces in technology be with solvent ratio such as Virahol or isopropanol water solution traditionally, or pure water is finished.But it is disadvantageous using solvent cleaning, because solvent may remain in the back of substrate, and from concerning environmentAL safety with comprise the flammable chemical stability aspect also may right and wrong desirably debatable.In addition, along with the arrival in soaring oil prices epoch, use solvent cleaning may cause increasing the technology cost of proportional increase with cost of material.And, use pure water to clean and also do not demonstrate the cleansing power of removing pollutent fully, and therefore produce the decline of producing productive rate together.
In addition, the non-PI oriented layer of desirably damaging of clean-out system possibility that contains basic cpd.
Also have, the Japanese Patent of the flat 3-62018 of publication number discloses a kind of ultrasonic cleaning of using pure water to carry out rubbed substrate, stably to form the method for high tilt angle.But it is very difficult introducing ultrasonic wave in the technology of making indicating meter, and uses pure water to clean the performance that can not satisfy recently required clean-out system.The Japanese Patent of the flat 3-81730 of publication number discloses a kind of method of using brush to clean the surface of rubbed substrate, but owing to produces from the secondary pollutant of brush and pollutent once more attached on the substrate, so can not expectation ideal cleaning performance.
In above-mentioned Japanese Patent, in cleaning, used the equipment of the cleansing power of bestowing physics, the non-cost that desirably increases cleaning, and also have problem inevitably, comprise owing to using Virahol or pure water to make dissolvent residual on substrate, wash not good, the adhering to once more etc. of particle.
Therefore, in order to solve above-mentioned problem, superior aspect human body safety and the work safety and can show that by adding various tensio-active agents the research of the various water-based cleaning systems of high cleansing power and flushing characteristic constantly carrying out,
Summary of the invention
Therefore, the present invention aims to provide a kind of cleansing composition, and it has superior wetting and osmotic effect, and it is very effective removing pollutent from the upper surface of oriented layer substrate thus.
In addition, the present invention aims to provide a kind of cleansing composition that does not damage oriented layer.
Therefore in addition, the present invention aims to provide a kind of cleansing composition, and it has uninflammability, is safe with environment amenable, and has low foaming.
In addition, the present invention aims to provide a kind of cleansing composition, and it does not corrode copper bearing metal level of bag and the aluminiferous metal level of bag.
One aspect of the present invention provides a kind of cleansing composition of alkali-free compound, it comprises, gross weight based on composition, 0.1 the lower alcohol of C1～C5 of～15 weight %, 0.1 the water-soluble glycol ether compound of～15 weight %, 0.01 the organic phosphoric acid of～10 weight %, pyrryl compound and the residuum of 0.001～10 weight % are water.
Another aspect of the present invention provides the liquid crystal cells that comprises the oriented layer of cleaning with above-mentioned cleansing composition.
Further aspect of the present invention provides the LCD that comprises above-mentioned liquid crystal cells.
Description of drawings
To more be expressly understood the features and advantages of the present invention by following detailed description in conjunction with respective drawings, wherein:
Fig. 1 has shown the surface of Cu when the cleansing composition of use-case 1 cleans the Cu/Ti circuit board;
Fig. 2 has shown the surface of Al when the cleansing composition of use-case 2 cleans the Mo/Al/Mo circuit board;
Fig. 3 has shown the surface of Al when the cleansing composition that uses comparative example 1 cleans the Mo/Al/Mo circuit board; With
Fig. 4 has shown the surface of Cu when the cleansing composition that uses comparative example 1 cleans the Cu/Ti circuit board;
Embodiment
Provide detailed description of the present invention hereinafter.
Cleansing composition according to alkali-free compound of the present invention comprises C1～C5 lower alcohol, water-soluble glycol ether compound, organic phosphoric acid, pyrryl compound, and water.
Usually, basic cpd is used to remove pollutent or the organic substance from air.But, under basic cpd is used in situation in the liquid crystal cells process of making LCDs, may damage liquid crystal aligning layer, particularly, the PI oriented layer.Therefore, do not contain such basic cpd, thereby stop damage liquid crystal aligning layer according to cleansing composition of the present invention.
In addition, cleansing composition according to the present invention is favourable, because C1～C5 lower alcohol, the water-soluble glycol ether compound, with the combination of organic phosphoric acid, thereby removing pollutent and stoping oriented layer to show superior effect aspect being damaged and making in the liquid crystal cells process of indicating meter, before or after the friction liquid crystal aligning layer, during cleaning base plate, demonstrate uninflammability and low foaming.And said composition is being cleaned liquid crystal aligning layer particularly, is very effective to removing pollutent in the PI oriented layer.And because the pyrryl compound does not damage metal level that comprises Cu and the metal level that comprises Al according to cleansing composition of the present invention, the electrode or the lead that consequently are positioned at the liquid crystal aligning layer place of not being capped do not corrode yet.
Strengthened the wetting and penetrating power of clean-out system according to C1 contained in the cleansing composition of the present invention～C5 lower alcohol, and improved the ability that stops pollutent to be adhered to once more, thereby easily removed pollutent from substrate to substrate.
Lower alcohol can use according to the amount based on 0.1～15 weight % of composition gross weight, and preferred 0.5～10 weight %.If the amount of lower alcohol is less than 0.1 weight %, surface tension does not reduce, and makes it be difficult to show wetting and penetrating power.On the contrary, if the amount of lower alcohol surpasses 15 weight %, lower alcohol may be stayed the back of substrate, the non-defective that desirably causes.
The kind of C1～C5 lower alcohol is not particularly limited, but is based on comprising the consideration of water miscible characteristic, preferably includes C1～C4 lower alcohol, for example, methyl alcohol, ethanol, n-propyl alcohol, Virahol, ethylene glycol, 1,2-propylene glycol, 1, ammediol, 1,2 butyleneglycols, 1,3 butyleneglycols, 1,4-butyleneglycol, glycerol and 1,2, the 4-trihydroxybutane can use or use two kinds or above mixture separately.
The water-soluble glycol ether compound that is comprised in cleansing composition works aspect the solvability in water removing oily components and improve, and described oily components only is considered to be difficult to remove from the surface of rubbed substrate by using the lower alcohol aqueous solution.
The water-soluble glycol ether compound can be according to based on the composition gross weight, and the amount of 0.1～15 weight % is used, and preferred 0.5～10 weight %.If the amount of water-soluble glycol ether compound is less than 0.1 weight %, be difficult to remove oily components from the rubbed substrate surface.On the contrary, if the amount of water-soluble glycol ether compound surpasses 15 weight %, the therefore clean-out system that makes the very thickness that may become, thus it is to the wetting of substrate and penetrating power possible deviation in cleaning.
The water-soluble glycol ether of the preferred C1～C10 of water-soluble glycol ether compound.The example of the water-soluble glycol ether of C1～C10 can comprise ethylene glycol monomethyl ether (MG), diethylene glycol monomethyl ether (MDG), triethylene glycol monomethyl ether (MTG), poly glycol monomethyl ether (MPG), ethylene glycol monoethyl ether (EG), diethylene glycol monoethyl ether (EDG), ethylene glycol monobutyl ether (BG), diethylene glycol monobutyl ether (BDG), triethylene glycol butyl ether (BTG), propylene glycol monomethyl ether (MFG), dipropylene glycol monomethyl ether (MFDG), and it can use or use two kinds or above mixture separately.
Play the dispersion which contaminant particles according to organic phosphoric acid contained in the cleansing composition of the present invention, make it not accumulative effect, and in cleaning, also play the wetting and penetrating power of raising, and then improve cleaning performance substrate.In addition, organic phosphoric acid can be removed metallics effectively, and also can stop metal level that comprises Cu and the corrosion that comprises the metal level of Al.
Organic phosphoric acid can be according to based on the composition gross weight, and the amount of 0.01～10 weight % is used, and preferred 0.1～5 weight %.If the amount of organic phosphoric acid is lower than 0.01 weight %, to not increased by the wetting and penetrating power on the surface of the substrate that rubbed.On the contrary, if the amount of organic phosphoric acid surpasses 10 weight %, this component may remain in the back of substrate, the non-defective that desirably causes.
The example of organic phosphoric acid is not particularly limited, comprise Amino Trimethylene Phosphonic Acid, ethylidene diphosphonic acid, 1-hydroxy ethylene-1, the 1-di 2 ethylhexyl phosphonic acid, 1-hydroxy propylidene-1, the 1-di 2 ethylhexyl phosphonic acid, 1-hydroxy butylidene-1, the 1-di 2 ethylhexyl phosphonic acid, ethylamino dimethylene phosphonic acids, 1,2-propylene diamine tetramethylene phosphonic acid, the amino dimethylene phosphonic acids of dodecyl, nitrotrimethylolmethane methylene phosphonic acid (nitrotris (methylenephosphonic acid)), quadrol dimethylene phosphonic acids, ethylenediamine tetramethylene phosphonic acid, the hexamethylenediamire tetramethylene phosphonic acid, Diethylenetriamine pentamethylene phosphonic acids, the cyclohexanediamine tetramethylene phosphonic acid, hydroxyl phosphonoacetic acid and 2-phosphonic acids-butane-1,2, the 4-tricarboxylic acid.Useful especially is 1-hydroxy ethylene-1,1-di 2 ethylhexyl phosphonic acid, hydroxyl phosphonoacetic acid, Amino Trimethylene Phosphonic Acid or 2-phosphonic acids-butane-1,2,4-tricarboxylic acid.
The metal level that will comprise Cu according to pyrryl compound contained in the cleansing composition of the present invention minimizes with the corrosion that comprises the metal level of Al.
The pyrryl compound can be according to based on the composition gross weight, and the amount of 0.001～10 weight % is used, and preferred 0.01～3 weight %.When the consumption of this component fell in the above-mentioned scope, to metal level that comprises Cu and the damage that comprises the metal level of Al, just, its corrosion can be reduced to minimum, and can produce economic benefit.
Preferably with the pyrryl compound of following molecular formula 1 representative.
Molecular formula 1
In molecular formula 1, R
1, R
2And R
3Be independently hydrogen atom, halogen atom, C1～C6 alkyl, C3～C6 cycloalkyl, allyl group, aryl, amino, C1～C6 alkylamino, nitro, cyano group, sulfydryl (mercapto group), C1～C6 alkane sulfydryl, hydroxyl, C1～C6 hydroxyalkyl, carboxyl, C1～C6 carboxyalkyl, acyl group, C1～C6 alkoxyl group or the monovalent group of heterocyclic separately.
Pyrryl compound by molecular formula 1 representative can be selected from the benzotriazole by N-[() methyl] diethanolamine, N-[(methyl isophthalic acid H-benzotriazole-1-yl) methyl] dimethanolamine, N-[(ethyl-1H-benzotriazole-1-yl) methyl] diethanolamine, N-[(methyl isophthalic acid H-benzotriazole-1-yl) methyl] dipropanolamine, 2,2 '-[[(methyl isophthalic acid H-benzotriazole-1-yl) methyl] imino-] dicarboxylic acid, 2,2 '-[[(methyl isophthalic acid H-benzotriazole-1-yl) methyl] imino-] dimethylamine and N-[(amine-1H-benzotriazole-1-yl) methyl] group formed of diethanolamine.
In addition, be not particularly limited, but can comprise the deionized water that is suitable for semiconductor technology, and have the resistivity of 18M Ω cm at least according to the water that is comprised in the cleansing composition of the present invention.The amount of water can be adjusted according to other the amount of component.Based on the composition gross weight, add entry as residuum, so that total weight percentage of composition is 100.
According to not containing organic acid in the cleansing composition of the present invention is preferred.Reason is that metallics can be by effectively from oriented layer when containing the organic acid cleansing composition and use behind the friction orientation layer in LCDs makes, and particularly remove on the surface of PI oriented layer, and still, the corrosion of metal electrode or lead also may be accelerated.
In order to improve cleaning performance, can further comprise common additive known in the art according to cleansing composition of the present invention, for example, inhibitor, wetting/permeate agent, dispersion agent, surface-modifying agent etc.
Can use common known method preparation according to the component of cleansing composition of the present invention, and preferably have the purity of suitable semiconductor technology.
In addition, the invention provides the liquid crystal cells that comprises the oriented layer of using above-mentioned cleansing composition cleaning, in addition, the invention provides the LCD that comprises above-mentioned liquid crystal cells.
When using according to cleansing composition of the present invention, the pollutent recrement on the oriented layer substrate can be removed fully, and the liquid crystal cells that comprises such oriented layer thus has high quality.And the LCD that comprises such liquid crystal cells can provide display screen clearly.
Use does not have particular determination according to the purging method of cleansing composition of the present invention.Its example can comprise immersion, stirring, ultrasonic degradation, sprinkling (shower spraying), smash slurry (puddling), brush etc.
Cleansing composition according to the present invention has superior wetting and osmotic effect, and therefore the pollutent that is present on the oriented layer substrate can be removed effectively.Do not damage the oriented layer that is included among the LCD according to cleansing composition of the present invention, therefore in the liquid crystal cells process of making LCD, the cleaning base plate before or after the friction liquid crystal aligning layer is very effective.Particularly, when this cleansing composition is used in when making in the LCD technology, metallics can be removed by the upper surface from oriented layer effectively.And cleansing composition according to the present invention is non-combustible, is safe and environment amenable thus and can not causes bubble problem.Do not corrode metal level that comprises Cu and the metal level that comprises Al according to cleansing composition of the present invention yet.
Can obtain the present invention is better understood by following example, these examples are to be used for elaborating, rather than are interpreted as limiting of the present invention.
Example 1～11 and comparison example 1～8: the preparation of cleansing composition
The component that shows in the following table 1 is added in the mixing vessel that is equipped with agitator with predetermined amount, and at room temperature the speed with 500rpm stirred 1 hour, thereby prepared cleansing composition.
Table 1
A-1: ethanol
A-2: Virahol
A-3: glycerol
B-1: diethylene glycol monomethyl ether (MDG)
B-2: diethylene glycol monoethyl ether (EDG)
B-3: diethylene glycol monobutyl ether (BDG)
C-1:1-hydroxy ethylene-1,1-di 2 ethylhexyl phosphonic acid (HEDP)
C-2:2-phosphonic acids-butane-1,2,4-tricarboxylic acid (PBTC)
C-3: hydroxyl phosphonoacetic acid (HPA)
D-1:N-[(ethyl-1H-benzotriazole-1-yl) methyl] diethanolamine
D-2:N-[(amine-1H-benzotriazole-1-yl) methyl] diethanolamine
TMAH: Tetramethylammonium hydroxide
E-1: oxalic acid
Test examples: cleansing power and to the assessment of the damage of oriented layer
1. to the damage of PI oriented layer with remove the assessment of particle ability
A substrate (5cm x 5cm x 0.7cm), its PI oriented layer is rubbed, make it be in the air 24 hours, so that it is by pollutions such as various organism, inorganics, particles, use to spray the glass substrate washing device of type then, at room temperature cleaned 2 minutes with each cleansing composition of example 1～11 and comparison example 1～8.After the cleaning, wash substrate 30 seconds and use nitrogen drying with ultrapure water.Observe thus obtained substrate with scanning electronic microscope (SEM) (S-4700 is provided by Hitachi, Ltd), estimate whether the PI oriented layer is damaged and estimate cleansing power according to the number that remains in the gritty particle of substrate back.
The result is presented in the following table 2, and wherein ◎ is superior, and the 0th, good, △ is medium, reach * is poor.When the PI oriented layer is stripped from, can not measure the result, this situation is represented with "-".
2. remove the assessment of organic pollutant ability
A glass substrate make it be in the air 24 hours, so that it is by pollutions such as various organism, inorganics, particles, drips the ultrapure water of 0.5 μ l afterwards to it, measures contact angle with the confirmation form surface pollution before cleaning.Particularly, each cleansing composition 100ml of example 1～11 and comparison example 1～8 is joined in the 250ml beaker, at room temperature glass substrate was soaked wherein 2 minutes and clean.Afterwards, wash substrate 30 seconds and use nitrogen drying with ultrapure water.The ultrapure water of 0.5 μ l is added drop-wise to the contact angle of measuring on the glass substrate after cleaning.
The result is presented in the following table 2, wherein be 30 ° or be judged to be ◎ when bigger when the variation of cleaning the back contact angle, the variation of contact angle is judged to be zero from 15 ° when being less than 30 °, the variation of contact angle is judged to be △ when being less than 15 ° from 5 °, and the variation of contact angle be 5 ° or more hour be judged to be *.
3. to the assessment of the damage of Al, Cu
Be the damage of assessment, use the damage of Mo/Al/Mo circuit board assessment, and use the damage of Cu/Ti circuit board assessment Cu to Al to lead.Particularly, each cleansing composition 100ml of example 1～11 and comparison example 1～8 is joined in the 250ml beaker, and at room temperature (25 °) soaked glass substrate wherein 30 minutes and clean.Afterwards, wash substrate 30 seconds and use nitrogen drying with ultrapure water.Whether the Al and the Cu that observe substrate with SEM (S-4700 is provided by Hitachi, Ltd) are damaged.The result is presented in the following table 2.
Assessment result to the damage of lead is also shown among Fig. 1 to 4.
Table 2
| Ex. | Damage to the PI oriented layer | Remove the particle ability | Remove the organism ability | Damage to Al | Damage to Cu |
| 1 | Not | ◎ | ○ | Not | Not |
| 2 | Not | ◎ | ○ | Not | Not |
| 3 | Not | ◎ | ○ | Not | Not |
| 4 | Not | ○ | ○ | Not | Not |
| 5 | Not | ◎ | ○ | Not | Not |
| 6 | Not | ◎ | ○ | Not | Not |
| 7 | Not | ◎ | ○ | Not | Not |
| 8 | Not | ○ | ○ | Not | Not |
| 9 | Not | ◎ | ○ | Not | Not |
| 10 | Not | ○ | ◎ | Not | Not |
| 11 | Not | ○ | ◎ | Not | Not |
| C.1 | Be stripped from | - | ◎ | Be | Be |
| C.2 | Not | △ | ○ | Not | Not |
| C.3 | Not | × | × | Not | Not |
| C.4 | Not | ○ | ○ | Not | Be |
| C.5 | Be stripped from | - | ◎ | Not | Not |
| C.6 | Not | ◎ | ○ | Not | Be |
| C.7 | Not | △ | × | Not | Not |
| C.8 | Not | ○ | ○ | Not | Be |
Just as seen from Table 2, all cleansing compositions of embodiment according to the present invention 1～11 have shown superior cleansing power and have not caused damage to the PI oriented layer.And, do not observe damage to Al and Cu.
Yet, the cleansing composition that contains a small amount of basic cpd in the comparison example 1 has been removed the PI oriented layer fully and has been damaged the metal level that comprises Al and Cu, and the cleansing composition of comparison example 2 is effective for removing impurity, cause that but the back that organic materials remains in substrate forms dirt, the non-defective that desirably produces thus.The cleansing composition of comparison example 3 does not cause the damage to oriented layer, but has the low cleansing power of removing impurity.The cleansing composition of comparison example 4 does not cause the damage of oriented layer and has shown superior cleansing power, but damaged copper; Except component of the present invention, the non-PI oriented layer that desirably makes of cleansing composition that also further contains the comparison example 5 of basic cpd is peeled off; The non-Cu that desirably damaged of cleansing composition that does not contain the comparison example 6 of pyrryl compound.The cleansing composition that only contains the comparison example 7 of pure water does not cause the damage of PI oriented layer but right and wrong desirably demonstrate low cleansing power, and contains the non-Cu that desirably damaged of organic acid comparison example 8 cleansing compositions.
Simultaneously, Fig. 1 is the picture on the cleansing composition that shows use-case 1 Cu surface when cleaning the Cu/Ti circuit board, Fig. 2 is the photo on the cleansing composition that shows use-case 2 Al surface when cleaning the Mo/Al/Mo circuit board, Fig. 3 is the photo that shows Al surface when the cleansing composition that uses comparison example 1 cleans the Mo/Al/Mo-circuit board, and Fig. 4 is the photo that shows Cu surface when the cleansing composition that uses comparison example 1 cleans the Cu/Ti circuit board.
About Fig. 1 to 4, embodiment according to the present invention 1 and 2 cleansing composition do not cause the damage to Cu/Ti lead and Mo/Al/Mo lead.But the cleansing composition of comparison example 1 has damaged the whole of Cu/Ti lead and Mo/Al/Mo lead.
As mentioned, the invention provides cleansing composition and be very effective removing from the oriented layer upper surface of base plate aspect the pollutent with outstanding wetting and osmotic effect.Do not damage the oriented layer that is included among the LCD according to cleansing composition of the present invention, and therefore can demonstrate the superior effect aspect the substrate cleaning of in the liquid crystal cells process of making LCDs, before or after the friction liquid crystal aligning layer, implementing.Particularly, when cleansing composition according to the present invention was used to make LCD, it removes the ability that is positioned at the metallics on the oriented layer was high.Cleansing composition according to the present invention is non-combustible, is safe and environment amenable therefore, and does not produce air bubble problem.And, do not corrode metal level that comprises Cu and the metal level that comprises Al according to cleansing composition of the present invention.
Although of the present inventionly preferred embodiment be disclosed for illustrative purposes, but those skilled in the art can know the scope and the purport that need not break away from invention disclosed from subsidiary claim, and it is possible carrying out various modifications, increase and substituting.
Claims (11)
1. the cleansing composition of an alkali-free compound comprises, based on described composition gross weight,
0.1 the C1 of～15 weight %～C5 lower alcohol;
0.1 the water-soluble glycol ether compound of～15 weight %;
0.01 the organic phosphoric acid of～10 weight %;
0.001 the pyrryl compound of～10 weight %; With
Residuum is a water.
2. cleansing composition as claimed in claim 1, it is to be used in making liquid-crystal display, cleaning base plate before or after the friction process of oriented layer.
3. cleansing composition as claimed in claim 1, wherein said C1～C5 lower alcohol is to be selected from by methyl alcohol, ethanol, n-propyl alcohol, Virahol, ethylene glycol, 1,2-propylene glycol, 1, ammediol, 1,2-butyleneglycol, 1,3 butylene glycol, 1,4-butyleneglycol, glycerol and 1,2, the group that the 4-trihydroxybutane is formed.
4. cleansing composition as claimed in claim 1, wherein said water-soluble glycol ether compound are C1～C10 water-soluble glycol ether.
5. cleansing composition as claimed in claim 1, wherein said water-soluble glycol ether compound is to be selected from the group of being made up of ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, poly glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monoethyl ether, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol butyl ether, propylene glycol monomethyl ether and dipropylene glycol monomethyl ether.
6. cleansing composition as claimed in claim 1, wherein said organic phosphoric acid comprises by Amino Trimethylene Phosphonic Acid, ethylidene diphosphonic acid, 1-hydroxy ethylene-1, the 1-di 2 ethylhexyl phosphonic acid, 1-hydroxy propylidene-1, the 1-di 2 ethylhexyl phosphonic acid, 1-hydroxy butylidene-1, the 1-di 2 ethylhexyl phosphonic acid, ethylamino dimethylene phosphonic acids, 1,2-propylene diamine tetramethylene phosphonic acid, the amino dimethylene phosphonic acids of dodecyl, the nitrotrimethylolmethane methylene phosphonic acid, quadrol dimethylene phosphonic acids, ethylenediamine tetramethylene phosphonic acid, the hexamethylenediamire tetramethylene phosphonic acid, Diethylenetriamine pentamethylene phosphonic acids, the cyclohexanediamine tetramethylene phosphonic acid, hydroxyl phosphonoacetic acid and 2-phosphonic acids-butane-1,2, one or more that select in the group that the 4-tricarboxylic acid is formed.
7. cleansing composition as claimed in claim 1, wherein said pyrryl compound is represented by following molecular formula:
Molecular formula 1
R wherein
1, R
2And R
3Be independently hydrogen atom, halogen atom, C1～C6 alkyl, C3～C6 cycloalkyl, allyl group, aryl, amino, C1～C6 alkylamino, nitro, cyano group, sulfydryl, C1～C6 alkane sulfydryl, hydroxyl, C1～C6 hydroxyalkyl, carboxyl, C1～C6 carboxyalkyl, acyl group, C1～C6 alkoxyl group or the monovalent group of heterocyclic separately.
8. cleansing composition as claimed in claim 7, wherein said pyrryl compound is to be selected from the benzotriazole by N-[() methyl] diethanolamine, N-[(methyl isophthalic acid H-benzotriazole-1-yl) methyl] dimethanolamine, N-[(ethyl-1H-benzotriazole-1-yl) methyl] diethanolamine, N-[(methyl isophthalic acid H-benzotriazole-1-yl) methyl] dipropanolamine, 2,2 '-[[(methyl isophthalic acid H-benzotriazole-1-yl) methyl] imino-] dicarboxylic acid, 2,2 '-[[(methyl isophthalic acid H-benzotriazole-1-yl) methyl] imino-] dimethylamine, with N-[(amine-1H-benzotriazole-1-yl) methyl] group formed of diethanolamine.
9. cleansing composition as claimed in claim 1, it does not comprise organic acid.
10. a liquid crystal cells comprises the oriented layer of cleaning with any the described cleansing composition in the claim 1 to 9.
11. a liquid-crystal display comprises the described liquid crystal cells of claim 10.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2010-0055632 | 2010-06-11 | ||
| KR20100055632 | 2010-06-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102277242A true CN102277242A (en) | 2011-12-14 |
| CN102277242B CN102277242B (en) | 2015-01-07 |
Family
ID=45102977
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110170337.3A Active CN102277242B (en) | 2010-06-11 | 2011-06-13 | Cleaning agent composition |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5824249B2 (en) |
| KR (1) | KR101936956B1 (en) |
| CN (1) | CN102277242B (en) |
| TW (1) | TWI540206B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102816649A (en) * | 2012-08-16 | 2012-12-12 | 宋仕良 | Screen cleaning agent |
| CN104419535A (en) * | 2013-08-19 | 2015-03-18 | 南通市通州区悦硕农业开发有限公司 | Anti-fogging glass washing agent |
| CN105969554A (en) * | 2015-03-10 | 2016-09-28 | 东友精细化工有限公司 | Composition for cleaning photodegradable polyimide alignment film |
| CN111269761A (en) * | 2020-02-13 | 2020-06-12 | 金丝甲(上海)安全防范技术有限公司 | Decontamination liquid and application thereof in decontamination of actinide nuclide and transition metal nuclide pollution |
| CN111286418A (en) * | 2020-03-23 | 2020-06-16 | 苏州衍生生物科技有限公司 | Plane grinding cleaning agent and preparation method thereof |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103146246B (en) * | 2013-04-03 | 2014-12-24 | 东莞市剑鑫电子材料有限公司 | Aqueous acid metal printing ink cleaner, and preparation and using methods thereof |
| KR102377896B1 (en) * | 2015-10-07 | 2022-03-24 | 주식회사 이엔에프테크놀로지 | A Composition for Cleaning Alignment Film |
| KR102368898B1 (en) | 2020-05-18 | 2022-03-02 | 주식회사 태경코엠 | Cleaner composition comprising alkanediol or ethylhexylglycerine |
| KR20210142228A (en) | 2020-05-18 | 2021-11-25 | 주식회사 태경코엠 | Cleaner composition without surfactant |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1284705A (en) * | 1999-08-12 | 2001-02-21 | 瓦智能Bvi有限公司 | Liquid crystal display with non-specular surface reflecting sheet |
| US6638899B1 (en) * | 1999-09-10 | 2003-10-28 | Tokyo Ohka Kogyo Co., Ltd. | Photoresist stripping solution and a method of stripping photoresists with the same |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2982975B2 (en) * | 1990-11-02 | 1999-11-29 | ライオン株式会社 | Liquid crystal cell cleaning agent |
| JP4229552B2 (en) * | 1998-12-25 | 2009-02-25 | 東京応化工業株式会社 | Photoresist stripping composition and photoresist stripping method using the same |
| JP3246493B2 (en) * | 1999-01-01 | 2002-01-15 | 松下電器産業株式会社 | Substrate cleaning tank |
| TWI291065B (en) * | 2000-12-26 | 2007-12-11 | Nissan Chemical Ind Ltd | Diamines, polyimide precursors and polyimides produced by using the diamines, and liquid crystal aligning agents |
| TWI362415B (en) * | 2003-10-27 | 2012-04-21 | Wako Pure Chem Ind Ltd | Novel detergent and method for cleaning |
| JP2006098784A (en) * | 2004-09-29 | 2006-04-13 | Toshiba Corp | Viewing angle controlling device and display apparatus |
| JP2006152147A (en) * | 2004-11-30 | 2006-06-15 | Sanyo Chem Ind Ltd | Electronic component |
| US9058975B2 (en) * | 2006-06-09 | 2015-06-16 | Lam Research Corporation | Cleaning solution formulations for substrates |
-
2011
- 2011-06-09 KR KR1020110055390A patent/KR101936956B1/en active IP Right Grant
- 2011-06-09 JP JP2011129478A patent/JP5824249B2/en active Active
- 2011-06-10 TW TW100120466A patent/TWI540206B/en active
- 2011-06-13 CN CN201110170337.3A patent/CN102277242B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1284705A (en) * | 1999-08-12 | 2001-02-21 | 瓦智能Bvi有限公司 | Liquid crystal display with non-specular surface reflecting sheet |
| US6638899B1 (en) * | 1999-09-10 | 2003-10-28 | Tokyo Ohka Kogyo Co., Ltd. | Photoresist stripping solution and a method of stripping photoresists with the same |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102816649A (en) * | 2012-08-16 | 2012-12-12 | 宋仕良 | Screen cleaning agent |
| CN102816649B (en) * | 2012-08-16 | 2015-01-07 | 江苏兴达文具集团有限公司 | Screen cleaning agent |
| CN104419535A (en) * | 2013-08-19 | 2015-03-18 | 南通市通州区悦硕农业开发有限公司 | Anti-fogging glass washing agent |
| CN105969554A (en) * | 2015-03-10 | 2016-09-28 | 东友精细化工有限公司 | Composition for cleaning photodegradable polyimide alignment film |
| CN105969554B (en) * | 2015-03-10 | 2019-11-08 | 东友精细化工有限公司 | Photodegradation alignment film of polyimide composition for cleaning |
| CN111269761A (en) * | 2020-02-13 | 2020-06-12 | 金丝甲(上海)安全防范技术有限公司 | Decontamination liquid and application thereof in decontamination of actinide nuclide and transition metal nuclide pollution |
| CN111286418A (en) * | 2020-03-23 | 2020-06-16 | 苏州衍生生物科技有限公司 | Plane grinding cleaning agent and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI540206B (en) | 2016-07-01 |
| CN102277242B (en) | 2015-01-07 |
| KR101936956B1 (en) | 2019-01-09 |
| JP5824249B2 (en) | 2015-11-25 |
| TW201144429A (en) | 2011-12-16 |
| KR20110135813A (en) | 2011-12-19 |
| JP2012001719A (en) | 2012-01-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102277242B (en) | Cleaning agent composition | |
| TWI443191B (en) | Lead-free solder flux removal detergent composition and lead-free solder flux removal method | |
| KR102314305B1 (en) | Cleaning composition and cleaning method | |
| CN102482625A (en) | Cleaning agent for removal of, removal method for, and cleaning method for water-soluble, lead-free solder flux | |
| TWI794152B (en) | Composition for post chemical- mechanical- polishing cleaning | |
| JP6886469B2 (en) | Cleaning composition after chemical mechanical polishing | |
| KR101087087B1 (en) | Aqueous industrial cleaner composition | |
| KR101847208B1 (en) | Detergent composition for flat panel display device | |
| CN102560519B (en) | A kind of cleaning solution for metal corrosion resistance | |
| KR102377573B1 (en) | Composition for post chemical-mechanical-polishing cleaning | |
| TW200402469A (en) | Detergent composition for cleaning precision parts | |
| CN102575201B (en) | Cleaning solution composition for substrate for preparation of flat panel display | |
| TWI484031B (en) | Aqueous detergent composition | |
| WO2021230026A1 (en) | Detergent composition and chemical-mechanical polishing composition | |
| KR101520098B1 (en) | Aqueous detergent composition | |
| KR20080109987A (en) | Cleaning solution composition and cleaning method using the same | |
| TW202216976A (en) | Cleaner for electronic device components | |
| KR20060121360A (en) | Low foaming aqueous detergent composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent of invention or patent application | ||
| CB02 | Change of applicant information |
Address after: Jeonbuk, South Korea Applicant after: Tongwoo Fine Chemicals Co., Ltd. Address before: South Korea, Republic of Korea, Seoul special city, Jiangnan District, 30% holes, 159-9 heart airport, Tower8 layer 135-973 Applicant before: Dongwoo Fine Chem Co Ltd |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: DONGWOO FINE-CHEM CO., LTD. TO: TONGWOO FINE CHEMICALS CO., LTD. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |