CN102269520B - 一种用于中子衍射样品原位实验的镜面高温炉装置 - Google Patents
一种用于中子衍射样品原位实验的镜面高温炉装置 Download PDFInfo
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- CN102269520B CN102269520B CN201110179475.8A CN201110179475A CN102269520B CN 102269520 B CN102269520 B CN 102269520B CN 201110179475 A CN201110179475 A CN 201110179475A CN 102269520 B CN102269520 B CN 102269520B
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- 238000001683 neutron diffraction Methods 0.000 title claims abstract description 20
- 238000012613 in situ experiment Methods 0.000 title claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
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- 239000000498 cooling water Substances 0.000 claims description 5
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- 238000012986 modification Methods 0.000 description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- 230000002459 sustained effect Effects 0.000 description 1
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110179475.8A CN102269520B (zh) | 2011-06-28 | 2011-06-28 | 一种用于中子衍射样品原位实验的镜面高温炉装置 |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110179475.8A CN102269520B (zh) | 2011-06-28 | 2011-06-28 | 一种用于中子衍射样品原位实验的镜面高温炉装置 |
Publications (2)
| Publication Number | Publication Date |
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| CN102269520A CN102269520A (zh) | 2011-12-07 |
| CN102269520B true CN102269520B (zh) | 2014-06-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201110179475.8A Active CN102269520B (zh) | 2011-06-28 | 2011-06-28 | 一种用于中子衍射样品原位实验的镜面高温炉装置 |
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| CN (1) | CN102269520B (zh) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106706443A (zh) * | 2017-03-09 | 2017-05-24 | 中国工程物理研究院核物理与化学研究所 | 一种用于中子衍射的原位加热装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01126291A (ja) * | 1987-11-10 | 1989-05-18 | Nec Corp | 輻射線加熱装置 |
| CA2019941C (en) * | 1989-07-13 | 1994-01-25 | Toshio Abe | Electrostatic levitation furnace |
| JPH1126291A (ja) * | 1997-07-01 | 1999-01-29 | Taiyo Yuden Co Ltd | チップ型コンデンサアレイ |
| CN1137292C (zh) * | 2000-11-06 | 2004-02-04 | 西北工业大学 | 一种用于晶体生长的加热方法及其装置 |
| CN1932473A (zh) * | 2006-09-05 | 2007-03-21 | 西北工业大学 | 双椭圆反射柱面部分重叠光辐射热疲劳试验装置 |
| WO2008084529A1 (ja) * | 2007-01-10 | 2008-07-17 | Crystal Systems Corp. | 浮遊帯域溶融装置 |
| JP2009210459A (ja) * | 2008-03-05 | 2009-09-17 | Mitsubishi Electric Corp | 昇温脱離分析装置 |
| CN202126179U (zh) * | 2011-06-28 | 2012-01-25 | 中国原子能科学研究院 | 一种用于中子衍射样品原位实验的镜面高温炉装置 |
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- 2011-06-28 CN CN201110179475.8A patent/CN102269520B/zh active Active
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| CN102269520A (zh) | 2011-12-07 |
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Inventor after: Chen Dongfeng Inventor after: Zhang Li Inventor after: Wu Zhanhua Inventor after: Li Tianfu Inventor after: Jiao Xuesheng Inventor after: Liang Feng Inventor after: Yang Haozhi Inventor after: Wang Zijun Inventor after: Hu Rui Inventor after: Liu Yuntao Inventor after: Gao Jianbo Inventor after: Li Junhong Inventor after: Wang Hongli Inventor after: Sun Kai Inventor after: Xiao Hongwen Inventor after: Han Songbai Inventor after: Li Meijuan Inventor before: Gao Jianbo Inventor before: Zhang Li Inventor before: Wu Zhanhua Inventor before: Li Tianfu Inventor before: Jiao Xuesheng Inventor before: Liang Feng Inventor before: Yang Haozhi Inventor before: Wang Zijun Inventor before: Hu Rui Inventor before: Li Junhong Inventor before: Chen Dongfeng Inventor before: Liu Yuntao Inventor before: Wang Hongli Inventor before: Sun Kai Inventor before: Xiao Hongwen Inventor before: Han Songbai Inventor before: Li Meijuan |
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| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: GAO JIANBO LI JUNHONG CHEN DONGFENG LIU YUNTAO WANG HONGLI SUN KAI XIAO HONGWEN HAN SONGBAI LI MEIJUAN ZHANG LI WU ZHANHUA LI TIANFU JIAO XUESHENG LIANG FENG YANG HAOZHI WANG ZIJUN HU RUI TO: CHEN DONGFENG LIU YUNTAO GAO JIANBO LI JUNHONG WANG HONGLI SUN KAI XIAO HONGWEN HAN SONGBAI LI MEIJUAN ZHANG LI WU ZHANHUA LI TIANFU JIAO XUESHENG LIANG FENG YANG HAOZHI WANG ZIJUN HU RUI |
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