CN102263073A - Compound of diamond and aluminium and preparing method thereof - Google Patents
Compound of diamond and aluminium and preparing method thereof Download PDFInfo
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- CN102263073A CN102263073A CN2011101450740A CN201110145074A CN102263073A CN 102263073 A CN102263073 A CN 102263073A CN 2011101450740 A CN2011101450740 A CN 2011101450740A CN 201110145074 A CN201110145074 A CN 201110145074A CN 102263073 A CN102263073 A CN 102263073A
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Abstract
Provided is a compound of diamond and aluminium and a preparing method thereof. The compound comprises a metal films composed of pure alumimuim or aluminium alloy and used for installing heating devices, such as a diamond plate and a power semiconductor, that is to say, a 2cm large-area metal film is adopted. Adhesiveness of the diamond plate and the metal film is high, warping being small. The compound of diamond and aluminium arranged on the diamond plate (11) comprises, from a side of the diamond plate (11), a middle layer (31) composed of silicon containing aluminium alloy and a metal film (21) composed of pure alumimuim or aluminium alloy.
Description
Technical field
The present invention relates to the diamond that can be used as power semiconductor heat sink (heat sink) etc. and the conjugant and the manufacture method thereof of aluminium.
Background technology
Power semiconductor is to be used as the semiconductor device that power control is used etc.The power semiconductor of IGBT (igbt) and MOSFET (power field effect transistor a kind of) etc. heat sink has heat sink matrix that high-termal conductivity and insulating properties are arranged and the metal film that is engaged with the surface of this heat sink matrix.Described heat sink matrix is by AlN, Si
3N
4, Al
2O
3Constitute on pottery.
The magnitude of current that the described metal film that engages with power semiconductor, its thickness need adapt on the power semiconductor to be circulated has the thick above thickness of 100 μ m that reaches.This metal film is also being born the thermal stress that relaxes power semiconductor and heat sink matrix and as equal tasks of backing (heat spreader).Because require its conductivity height for metal film, the pyroconductivity height, cheap in the practicality, so use Cu and Al more.
But, as the heat sink matrix that constitutes by diamond, by with replacement by the described heat sink matrix that pottery constitutes, can realize the power semiconductor life-time dilatationization, in addition, can also tackle the more high-output powerization of power semiconductor.Diamond has high thermal conductivity (maximum in the whole material under the room temperature), little low-thermal-expansion rate and excellent electrical insulating property.
Open in the flat 11-26887 communique the spy, disclose and a kind ofly have diamond and heat heavy semiconductor laser.This semiconductor laser is presented among Fig. 3.Fig. 3 is the figure that is used to illustrate prior art, is that expression has the figure that diamond heats the structure of heavy semiconductor laser.
Semiconductor laser as shown in Figure 3, is made of following: tabular substrate 55; Be formed at substrate 55 the surface, thickness is the vapor phase synthetic diamond layer 54 of 3 μ m～9 μ m; Be combined to metallization (metallize) layer 53 that the mode on the surface of diamond layer is provided with coating gas; The semiconductor laser chip 51 that on metal layer 53, engages via the solder layer 52 of thick 2 μ m～8 μ m.
Described substrate 55 is made of Si.Described metal layer 53 is to be used for being soldered on the substrate 55 surperficial formed vapor phase synthetic diamond layers 54 semiconductor laser chip 51 needed.Described metal layer 53 is sides that contact from vapor phase synthetic diamond layer 54, forms by the sequential cascade of Ti, Pt, Au.Diamond heats to sink and is made of the vapor phase synthetic diamond layer 54 and the metal layer 53 that are formed at described substrate 55 surfaces.The surface-coated square that the substrate coated 0.75mm of being of the diamond * 0.75mm of vapor phase synthetic diamond layer 54 is arranged, as shown in Figure 3, the substrate coated whole faces (surface, the back side, side) on every side of this diamond are metallized by Ti, Pt, Au.And, on metallized diamond clad sheet, use the AuSn solder alloy, the semiconductor laser chip 51 that has the InGaAsP by 0.3mm * 0.3mm * 0.1mm to constitute with 290 ℃ brazing temperature solderings.
Aforesaid existing diamond heat heavy be small-sized semiconductor laser with heat sink, size is about 0.3mm * 0.3mm.Therefore, this metal layer can be the film of thick several μ m, for metal layer, even use desirable material, such as the such noble metal of Au, Pt, also not too can cause cost and raise.
But it is heavy that the diamond with aforesaid metal layer that is made of the such noble metal of Au, Pt heats, and as other power semiconductor usefulness of 1cm size class of the big electric current of circulation, cost promotes because can cause significantly, so can not adopt.
In recent years, in the inverter circuit of high-power usefulness, the ceramic of the thick hundreds of μ m that for example soldered joint arranged, the metal film that is made of Al or Cu is heat sink, is assembled into size for about 20mm * 30mm, by AlN, Al
2O
3On the heat sink matrix of tabular ceramic that constitutes.On described metal film, engage the power semiconductor that other very big IGBT of 1cm size class and FWD (oppositely recovering to use diode) etc. are arranged then.The joint of power semiconductor adopts soldered joint more.Described metal film is also being born all tasks of backing in as current path.
Use diamond to heat heavy matrix when substituting the heat sink matrix of the bigger ceramic of this area, metal film does not use the noble metal of high price like this such as Au, but reasonably uses cheap Al or Cu.Al and Cu are considered to merits and demerits separately, use respectively according to purposes, and when for example wanting to make heat sink light weight own, then Al is favourable.
[patent documentation 1] spy opens flat 11-26887 communique
Summary of the invention
Therefore, problem of the present invention is, the conjugant and the manufacture method thereof of a kind of diamond and aluminium are provided, it has diamond plate and is used for the metal film that is made of fine aluminium or aluminium alloy of the heat object of installation power semiconductor device etc., promptly use other large-area metal film of 2cm size class, the tack of diamond plate and this metal film is also very high, and warpage is little.
In order to solve above-mentioned problem, in the present application, set forth following technical means.
First invention is the conjugant of diamond and aluminium, it is characterized in that on diamond plate, according to the order that begins from this diamond plate side, having intermediate layer that is made of the silicon-aluminum containing alloy and the metal film that is made of fine aluminium or aluminium alloy.
Second invention is according to the conjugant of the first described diamond of invention and aluminium, it is characterized in that, described intermediate layer is the tissue that tilts, and the average content of Si is that the thickness of the above part of 5 quality % is 5 μ m～100 μ m.
The 3rd invention is according to the conjugant of the first or second described diamond of invention and aluminium, it is characterized in that the aggregate thickness in described metal film and described intermediate layer is 20 μ m～1mm.
The 4th invention is according to the conjugant of each described diamond and aluminium in first～the 3rd invention, it is characterized in that the surface roughness Ra of the described intermediate layer side of described diamond plate is in the scope of 1 μ m～10 μ m.
The 5th invention is the manufacture method of the conjugant of a kind of diamond and aluminium, be to be manufactured on the diamond plate, according to the order that begins from this diamond plate side, the method of the diamond of the metal film that has the intermediate layer that constitutes by the silicon-aluminum containing alloy and constitute by fine aluminium or aluminium alloy and the conjugant of aluminium, wherein, preparation is formed with first member of the metal level that is made of fine aluminium or silicon-aluminum containing alloy on diamond plate, with second member that on the metal film that constitutes by fine aluminium or aluminium alloy, is coated with the silicon-aluminum containing solder alloy, on the surface of the described metal level of described first member and/or at the surface coated soldering scaling powder of the described silicon-aluminum containing solder alloy of described second member, with the mode that this surface of scaling powder becomes coincidence face described first member and described second member are overlapped so that be coated with soldering, described first member and described second member of this coincidence of heating in inert gas atmosphere or in the vacuum atmosphere, make the fusion of described silicon-aluminum containing solder alloy by heating, thereby described metal film is soldered on described first member.
The 6th invention is according to the manufacture method of the conjugant of the diamond of the 5th invention and aluminium, it is characterized in that, and be 590～605 ℃ in brazing temperature, the holding time is that 5～10 minutes scope is carried out described soldering.
The conjugant of diamond of the present invention and aluminium, on the surface of diamond plate via intermediate layer that the silicon-aluminum containing alloy constituted and engage the metal film that constitutes by fine aluminium or aluminium alloy, because have structure like this, even so other large-area metal film of 2cm size class, the tack of diamond plate and this metal film is also very high, warpage is also very little, for example is suitable as the heat sink use that other power semiconductor of 1cm size class is used.
According to the manufacture method of the conjugant of diamond of the present invention and aluminium, even can access other large-area metal film of 2cm size class, the tack of diamond plate and this metal film is also very high, the diamond that warpage is also very little and the conjugant of aluminium.
Description of drawings
Fig. 1 is the profile of manufacturing process that is used to illustrate the conjugant of the diamond of one embodiment of the present of invention and aluminium.
Fig. 2 is the profile that is used to illustrate the follow-up manufacturing process of manufacturing process shown in Figure 1.
Fig. 3 is the figure that is used to illustrate prior art, is that expression has the profile that diamond heats the structure of heavy semiconductor laser.
Symbol description
1 ... the Si substrate
2 ... the vapor phase synthetic diamond film
10 ... first member
11 ... the vapor phase synthetic diamond plate
12 ... the Al-Si metal level
20 ... second member
21 ... the Al metal film
22 ... the silicon-aluminum containing solder alloy
31 ... the Al-Si intermediate layer
41 ... K-Al-F is a scaling powder
Embodiment
Below, describe in more detail for the present invention.
(1) conjugant of diamond of the present invention and aluminium, on the vapor phase synthetic diamond plate, according to the order that the side from this vapor phase synthetic diamond plate begins, have the intermediate layer that constitutes by the silicon-aluminum containing alloy (below be also referred to as " Al-Si intermediate layer ".) and metal film (following also only be called " the Al metal film " that constitute by fine aluminium or aluminium alloy.), have vapor phase synthetic diamond plate/Al-Si intermediate layer/such stepped construction of Al metal film.Al and adamantine C (carbon) need high temperature in order directly to carry out chemical bond, in that both can not form firm joint below 600 ℃.In diamond aluminium conjugant of the present invention, make the Al-Si intermediate layer between vapor phase synthetic diamond plate and Al metal film, chemical bond takes place in the C of the part of the Si in the Al-Si intermediate layer and vapor phase synthetic diamond plate thus, forms firm joint interface.
In the conjugant of diamond of the present invention and aluminium, by making the Al-Si intermediate layer between gas phase synthetic diamond plate and Al metal film, when engaging for vapor phase synthetic diamond plate soldering Al metal film, being 590～600 ℃ with brazing temperature is that the situation of Cu is compared with metal film, can carry out soldering under lower temperature.So because brazing temperature is low, in the conjugant of diamond of the present invention and aluminium, the stress that occurs on the conjugant when returning room temperature after the soldering reduces, and is difficult to produce the warpage of combination and peeling off of Al metal film.
Also have, vapor phase synthetic diamond plate/Si monomer layer/Al-Si layer/such the stepped construction of Al metal film, gentle diamond plate/Si monomer layer/Al layer/Al-Si layer/such the stepped construction of Al metal film that is combined to all can not obtain the effect for the firm joint of vapor phase synthetic diamond plate Al metal film.
Mentioning reason, is the stepped construction owing to the described Si of having monomer, and the layer that engages with the vapor phase synthetic diamond plate is the Si monomer layer, and is very crisp, low with the bond strength of Al metal film.In addition, when engaging for vapor phase synthetic diamond plate soldering Al metal film, in the brazing process of about 600 ℃ of brazing temperatures, the Si atom of Si monomer layer spreads to Al-Si layer side, but must continue to heat-treat for a long time (soldering), reach roughly state near balance until this diffusion.If the holding time deficiency, then the mixed layer of the Si of high concentration and Al remains in the interface with the vapor phase synthetic diamond plate, because this mixed layer is very crisp crystallite, so the bond strength of conjugant reduces.
In addition, stepped construction with Si monomer layer, when engaging for vapor phase synthetic diamond plate soldering Al metal film, need be on the vapor phase synthetic diamond plate, carry out the film forming in these two stages of film forming of the film forming of Si monomer layer and aluminium lamination or silicon-aluminum containing alloy-layer.Therefore, there is the interior such shortcoming of production rate variance (output is low) of unit interval.With respect to this, the conjugant of diamond of the present invention and aluminium does not need the film forming of Si monomer layer, the productivity ratio excellence (output height) in the unit interval.
(2) secondly, describe for described vapor phase synthetic diamond plate.If the gas phase synthesis method of utilization microwave plasma chemical vapor coating (CVD) method etc. then for example can form for example other large-area polycrystalline diamond of 2cm size class at an easy rate.In general, compare the intensity height of polycrystalline diamond machinery with the phase monocrystal diamond.The vapor phase synthetic diamond plate of the conjugant of diamond of the present invention and aluminium, preferably its surperficial surface roughness Ra (the arithmetic average roughness Ra of JIS B0601 defined) is the scope of 1～10 μ m.If surface roughness Ra is in described scope, then under grappling (anchor) effect, with the bond strength height at its formed layer in surface.If surface roughness Ra is littler than described scope, then with a little less than the bond strength of its formed layer in surface.In addition, if surface roughness Ra is bigger than described scope, then be easy to generate the space and for preferred with joint interface at its formed layer in surface.
In addition, the surface of described vapor phase synthetic diamond plate, also can be by { 100}, { 111}, { 311}, { the crystal face formation of representational low order such as 110}, but more preferably, when carrying out surface observation with about 5000 times multiplying power with scanning electron microscope, the crystal face of low order can not clearly be differentiated more, and the surface is coarse more good more.
Such matsurface state can be realized by the etching under the oxygen-containing atmosphere.Have as concrete method, heat treatment in oxygen plasma treatment, the oxygen, in atmosphere, utilize the methods such as flame baking vapor phase synthetic diamond plate surface of gas burner.Thus, when described Al-Si intermediate layer is existed, anchoring effect from the surface roughness of vapor phase synthetic diamond plate is only not only arranged, and because the increase of the surface area increase of the vapor phase synthetic diamond plate chemical bond point with the Si atom Al-Si intermediate layer that bring causes the bond strength increase with described Al-Si intermediate layer.
Subsidiary in addition is, the surface of vapor phase synthetic diamond plate becomes the oxygen terminal, and the combination of the Si atom in the C of vapor phase synthetic diamond plate and Al-Si intermediate layer also can exist with the form of C-O-Si.
So, if the surface of vapor phase synthetic diamond plate is by the oxygen terminalization, even when then surface area is identical, compare with the situation that the hydrogen terminal is many, chemical bond point also increases to some extent, the bond strength increase.
(3) then, describe for described Al-Si intermediate layer.In the conjugant of diamond of the present invention and aluminium, the interface of Al-Si intermediate layer and Al metal film also can be indeterminate, and the Al-Si intermediate layer also can be to tilt to form.In addition, the Al-Si intermediate layer can not be a uniform formation, but dispersion tissue.The Al-Si intermediate layer causes the Si diffusion through soldering (heat treatment), therefore becomes usually to tilt to form.In addition, become dispersion tissue easily.Otherwise the Al-Si intermediate layer becomes tilt tissue or dispersion tissue, also is that soldering (heat treatment) is by the evidence that suitably carries out.The scope of preferred 5～30 quality % of the content of the Si in Al-Si intermediate layer.
Described Al-Si intermediate layer, the average content of preferred Si are that the thickness of the above part of 5 quality % is 5～100 μ m, more preferably 10～50 μ m.The thin thickness in Al-Si intermediate layer, when this Al-Si intermediate layer is formed by soldering, the thin silicon-aluminum containing solder alloy of certain used thickness.
Therefore, when the Al-Si intermediate layer that described thickness is lower than 5 μ m is formed between vapor phase synthetic diamond plate and the Al metal film by soldering, can not spread all over the silicon-aluminum containing solder alloy of described very thin thickness at the convex-concave surface of vapor phase synthetic diamond plate side and the convex-concave surface of Al metal film side.Therefore produce the space at the junction surface, or produce pore in formed Al-Si intermediate layer, the bond strength of bonded structure reduces.Described space not only makes bond strength reduce, but also becomes the essential factor that thermal impedance is reduced.On the other hand, the Al-Si intermediate layer is compared with fine aluminium, the resistivity height, pyroconductivity is low, from this point, if the described thickness in Al-Si intermediate layer surpasses 100 μ m, then compare with fine aluminium from the Al-Si intermediate layer, resistivity height, the low this point of pyroconductivity are not preferred.
(4) next, describe for described Al metal film.The Al metal film most preferably is made of pure Al, but is not limited thereto from the viewpoint of Low ESR and high thermoconductivity, also can contain some impurity, also can be made of aluminium alloy in addition.As the interpolation element (alloying element) of aluminium alloy, though be not particularly limited, for example can enumerate Mg, Ti, Si, Zn etc., also can add up to and contain about 10 quality %.
The thickness of this Al metal film, by the separately decision of Al metal film, but with match by comprising the thickness that described Al-Si intermediate layer determines at interior thickness.That is, the thickness that Al alloy film and Al-Si intermediate layer add up to is preferably 20 μ m～1mm, more preferably 100～200 μ m.
When the thickness of described total was lower than 20 μ m, the stress of joint interface was little, so bonded structure generation warpage, or the Al alloy film produces the possibility step-down of peeling off.On the other hand, when the thickness of described total surpassed 1mm, the stress of joint interface became excessive, can not get eliminating the warpage of bonded structure and the effect of peeling off of Al metal film.Also have, in order to offset warpage, preferred structure is, not only at the face of the face side of vapor phase synthetic diamond plate, also has Al-Si intermediate layer and the Al metal film that same area, stack pile are arranged with the face of table side at the back side of vapor phase synthetic diamond plate.
(5) next, the manufacture method for diamond aluminium conjugant of the present invention describes.This manufacture method at first is to prepare first member and second member, this first member, and it is formed with the metal level that is made of fine aluminium or silicon-aluminum containing alloy on vapor phase synthetic diamond plate surface; This second member, it is coated with the silicon-aluminum containing solder alloy on the metal film that is made of fine aluminium or aluminium alloy (below be also referred to as " Al metal film ").
Described vapor phase synthetic diamond plate is for example made by microwave plasma CVD technique.In addition, the formation of the described metal level on vapor phase synthetic diamond plate surface also can be undertaken by vapour deposition method or sputtering method.
As described above, by on the vapor phase synthetic diamond plate, forming described metal level in advance, can before soldering, just make the convex-concave surface of described metal level close attachment at the vapor phase synthetic diamond plate.In addition, when forming the silicon-aluminum containing alloy-layer as described metal level, this silicon-aluminum containing alloy-layer, its Si content lacks than the Si content of described silicon-aluminum containing solder alloy.Thus, can prevent in soldering that described silicon-aluminum containing alloy-layer from taking place to soften and peel off prior to described silicon-aluminum containing solder alloy.
Secondly, on the surface of the described metal level of described first member and/or the surface coated soldering scaling powder of the described silicon-aluminum containing solder alloy of described second member, make described first member and the coincidence of described second member with the mode that this surface of scaling powder becomes coincidence face so that be coated with soldering.
Described soldering scaling powder, preferred scaling powder composition are that the K-Al-F that fluoridizes system is a scaling powder.As K-Al-F is scaling powder, can enumerate KAlF
4K
2AlF
5H
2O.
Next, the mode of being close to two members for described first member and described second member of this coincidence is pressurizeed and is increased the weight of on one side, in inert gas atmosphere, heat in (in nitrogen or the argon gas atmosphere) or the vacuum atmosphere on one side, make the fusion of described silicon-aluminum containing solder alloy by heating, the described Al metal film of soldering on described first member.
Described soldering gets final product with following condition: brazing temperature: 590～605 ℃, and the holding time: 5～10 minutes.
So, can access on the vapor phase synthetic diamond plate, according to the order that begins from this vapor phase synthetic diamond plate side, have intermediate layer that constitutes by the silicon-aluminum containing alloy and the metal film that constitutes by fine aluminium or aluminium alloy, can access and be suitable as the heat sink diamond aluminium conjugant that other power semiconductor of 1cm size class is used.
Also have, be formed at the described metal level of vapor phase synthetic diamond plate, also can constitute by the fine aluminium that does not contain Si.Mention reason and be because, by soldering, the contained Si of described silicon-aluminum containing solder alloy can be diffused in this metal level in the relatively shorter time.As a result of be, the conjugant of resulting diamond and aluminium, the layer that engages with the vapor phase synthetic diamond plate contains Si, makes the Al-Si intermediate layer between vapor phase synthetic diamond plate and Al metal film.
[embodiment]
Below, see figures.1.and.2, describe for embodiments of the invention.Fig. 1 is the profile of manufacturing process that is used to illustrate the conjugant of the diamond of one embodiment of the present of invention and aluminium, and Fig. 2 is the profile that is used to illustrate the follow-up manufacturing process of manufacturing process shown in Figure 1.
(a) shown in Fig. 1 (a), by microwave plasma CVD technique, be of a size of the 20mm size in length and breadth, thickness is to form vapor phase synthetic diamond film 2 on the Si substrate 1 of 1mm.At the hydrogen of the indoor circulation flow 1980sccm of microwave CVD device and the mist of flow 20sccm, indoor air pressure is set at 16kPa.Then, to the microwave of indoor importing microwave power 60kW, frequency 915MHz.Thus, make described mixed gas plasmaization, at the upper surface formation vapor phase synthetic diamond film 2 of Si substrate 1.Described Si substrate 1 is set on the frame substrate in the mode of contact plasma.From cradle back metal described frame substrate is carried out water-cooled, carry out the temperature adjustment thus, make the surface temperature of Si substrate 1 reach 950 ℃.The surface temperature of Si substrate 1 is by infrared radiation thermometer measure.Film forming speed under this membrance casting condition of instrumentation in advance forms the vapor phase synthetic diamond film 11 ' of thick 200 μ m.
(b) because also can form diamond film (with reference to Fig. 1 (a)), so the diamond film of this side is removed (with reference to (b) of Fig. 1) by scaife (scaif) in the side of described Si substrate 1.
(c) then, grind and remove Si substrate 1,, still can obtain treated vapor phase synthetic diamond plate 11 even there is not Si substrate 1.Can produce warpage (with reference to Fig. 1 (c)) a little 11 of the vapor phase synthetic diamond plates of having removed Si substrate 1.
(d) grind by the vapor phase synthetic diamond plate 11 that produces warpage is carried out scaife, obtain not having the vapor phase synthetic diamond plate 11 (with reference to (d) of Fig. 1) of warpage.
(e) then, in atmosphere, pass through the flame of butane burner, carry out short time baking (10～20 seconds) equably for the both sides of vapor phase synthetic diamond plate 11, be formed with the convex-concave surface of set surface roughness thus on the surface of vapor phase synthetic diamond plate 11, and, make the surperficial oxygen terminalization (with reference to (e) of Fig. 1) of vapor phase synthetic diamond plate 11.The surface roughness Ra of vapor phase synthetic diamond plate 11 is the scope of 1～10 μ m.Through the adjustment (surface roughening) of surface roughness and vapor phase synthetic diamond plate 11 surfaces of oxygen terminalization, form the Al-Si metal level 12 that constitutes by the silicon-aluminum containing alloy described later at this.
The surface of vapor phase synthetic diamond plate 11 can also be confirmed by XPS physical measurement methods such as (photoelectron spectroscopies) by the oxygen terminalization, when water droplet hangs in this surface, fails to be measured to contact angle, can confirm hydrophily.Also have, if as the surface of object by the hydrogen terminalization, then become hydrophobicity, so water droplet hangs when this surface, the contact angle of water droplet reaches more than 90 °.This is known.
(f) then, on vapor phase synthetic diamond plate 11 surfaces (in the present embodiment, the single face of vapor phase synthetic diamond plate 11), form the Al-Si metal level 12 that constitutes by the silicon-aluminum containing alloy through surface roughness adjustment (surface roughening) and oxygen terminalization.That is, vapor phase synthetic diamond plate 11 does not carry out the mode of film forming with the marginal portion in the edge 0.5mm on four limits,, is configured in the sputtering chamber of magnetic controlled tube sputtering apparatus by adhering under the state that adhesive tape covers in described marginal portion.Then, use silicon-aluminum containing alloys target (Si content: 7 quality %), on vapor phase synthetic diamond plate 11, form thick 0.2 Al-Si metal level (Si content: 7 quality %) 12.Sputtering condition is as follows, atmosphere gas: argon gas; Air pressure: 0.3Pa; DC electric current: 3mA/cm
2Form after the Al-Si metal level 12, remove described adhesion adhesive tape.So, obtain being formed with first member 10 (with reference to (f) of Fig. 2) of Al-Si metal level 12 on vapor phase synthetic diamond plate 11 surfaces.
(g) prepare second member 20, it is coated with the silicon-aluminum containing solder alloy 22 of thick 50 μ m at the single face of the Al metal film 21 of the thick 350 μ m that are made of fine aluminium.
As silicon-aluminum containing solder alloy 22, use the solder of JIS A4045 alloy (Al-10 quality %Si alloy).Second member 20 be of a size of 19mm size (19mm * 19mm) in length and breadth.
Then shown in Fig. 2 (g), be scaling powder 41 (coating weight: 5g/m at the surface coated K-Al-F of the silicon-aluminum containing solder alloy 22 of the surface of the Al-Si metal level 12 of first member 10 and second member 20
2).
(h) next, shown in Fig. 2 (h), making and being coated with K-Al-F is the face that the described surface of scaling powder 41 becomes coincidence, and first member 10 and second member 20 are overlapped.Then, soldering is on one side for as the solder object, promptly first member 10 and second member 20 that are overlapped of quilt increases the weight of (10g/cm
2About), Yi Bian use heat-treatment furnace to carry out.
Atmosphere in the described heat-treatment furnace is the following nitrogen atmosphere of oxygen concentration 10ppm.
Then, described soldering object is warming up to after 590 ℃, carries out soldering with the condition of 10 minutes 590～600 ℃ * time of temperature with 30 fens clock times.Then, make soldering object be reduced to 200 ℃ to temperature, be fetched into afterwards outside the heat-treatment furnace, make it to naturally cool to room temperature through soldering with 30 fens clock times.
(i) like this, produced on vapor phase synthetic diamond plate 11, according to the order that begins from these vapor phase synthetic diamond plate 11 sides, have the Al-Si intermediate layer 31 and the Al metal film 21 that constitute by the silicon-aluminum containing alloy, be suitable as the heat sink diamond aluminium conjugant (with reference to (i) of Fig. 2) that other power semiconductor of 1cm size class is used.
Then, the warpage of the diamond aluminium conjugant of made when being estimated by the difference of the height at the edge on the surface of the central point on Al metal film 21 surfaces and Al metal film 21, is lower than 0.01mm as can be known, can access good effect.In addition, during the cross section of the diamond aluminium conjugant that observation post makes, Al metal film 21 not taking place as can be known yet peel off from vapor phase synthetic diamond plate 11, can access the joint construction of expection.
In addition, on vapor phase synthetic diamond plate 11, form and not contain the metal level that fine aluminium constituted of Si and replace described Al-Si metal level 12, with as first member, make diamond aluminium conjugant.Then, for this diamond aluminium conjugant, carry out analysis based on EDX method (energy dispersion type x-ray spectrometry) at the interface in vapor phase synthetic diamond plate and intermediate layer.Consequently, detect the existence of Si at described interface.Can confirm that thus under the soldering effect, silicon-aluminum containing solder alloy 22 contained Si are diffused in the metal level that is made of described fine aluminium, the layer that engages as vapor phase synthetic diamond plate 11 and form the Al-Si intermediate layer.
Claims (6)
1. the conjugant of diamond and aluminium is characterized in that on diamond plate, according to the order that begins from this diamond plate side, having intermediate layer that is made of the silicon-aluminum containing alloy and the metal film that is made of fine aluminium or aluminium alloy.
2. the conjugant of diamond according to claim 1 and aluminium is characterized in that, described intermediate layer forms the tissue that tilts, and the average content of Si is that the thickness of the above part of 5 quality % is 5 μ m～100 μ m.
3. the conjugant of diamond according to claim 1 and 2 and aluminium is characterized in that, the aggregate thickness in described metal film and described intermediate layer is 20 μ m～1mm.
4. according to the conjugant of each described diamond and aluminium in the claim 1～3, it is characterized in that the surface roughness Ra on the surface of the described intermediate layer side of described diamond plate is in the scope of 1～10 μ m.
5. the manufacture method of the conjugant of diamond and aluminium, it is characterized in that, be to be manufactured on the diamond plate, according to the order that begins from this diamond plate side, the method of the diamond of the metal film that has the intermediate layer that constitutes by the silicon-aluminum containing alloy and constitute by fine aluminium or aluminium alloy and the conjugant of aluminium, wherein
Preparation is formed with first member of the metal level that is made of fine aluminium or silicon-aluminum containing alloy on diamond plate, with second member that on the metal film that constitutes by fine aluminium or aluminium alloy, is coated with the silicon-aluminum containing solder alloy, on the surface of the described metal level of described first member and/or at the surface coated soldering scaling powder of the described silicon-aluminum containing solder alloy of described second member, with the mode that this surface of scaling powder becomes coincidence face described first member and described second member are overlapped so that be coated with soldering, described first member and described second member of this coincidence of heating in inert gas atmosphere or in the vacuum atmosphere, make the fusion of described silicon-aluminum containing solder alloy by heating, thereby described metal film is soldered on described first member.
6. the manufacture method of the conjugant of diamond according to claim 5 and aluminium is characterized in that, is 590～605 ℃ in brazing temperature, and the holding time is that 5～10 minutes scope is carried out described soldering.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010121535A JP5466578B2 (en) | 2010-05-27 | 2010-05-27 | Diamond-aluminum bonded body and manufacturing method thereof |
| JP2010-121535 | 2010-05-27 |
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| Publication Number | Publication Date |
|---|---|
| CN102263073A true CN102263073A (en) | 2011-11-30 |
| CN102263073B CN102263073B (en) | 2015-02-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110145074.0A Expired - Fee Related CN102263073B (en) | 2010-05-27 | 2011-05-24 | Compound of diamond and aluminium and preparing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5466578B2 (en) |
| CN (1) | CN102263073B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107849646A (en) * | 2015-07-13 | 2018-03-27 | 株式会社Uacj | aluminium alloy brazing sheet |
| CN111162448A (en) * | 2020-02-17 | 2020-05-15 | 济南大学 | Semiconductor laser heat sink with graphical structure and manufacturing method thereof |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018143344A1 (en) * | 2017-02-02 | 2018-08-09 | 三菱電機株式会社 | Semiconductor manufacturing method and semiconductor manufacturing device |
| JP2021112874A (en) * | 2020-01-20 | 2021-08-05 | 利昌工業株式会社 | Metal base copper-clad laminate |
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| DE3520923A1 (en) * | 1984-06-16 | 1985-12-19 | Ngk Spark Plug Co., Ltd., Nagoya, Aichi | Process for positive joining of ceramic materials to metals by means of an aluminium brazing solder |
| JPH05277845A (en) * | 1992-03-27 | 1993-10-26 | Toyo Kohan Co Ltd | Manufacture of vapor phase synthetic diamond coated tool |
| US5423475A (en) * | 1993-10-06 | 1995-06-13 | Westinghouse Electric Corporation | Diamond coatings for aluminum alloys |
| JP2001274302A (en) * | 2000-03-28 | 2001-10-05 | Jsr Corp | Heat transfer sheet and method for manufacturing the same |
| US6335863B1 (en) * | 1998-01-16 | 2002-01-01 | Sumitomo Electric Industries, Ltd. | Package for semiconductors, and semiconductor module that employs the package |
| US20020191378A1 (en) * | 2000-10-31 | 2002-12-19 | Hitachi, Ltd. | Semiconductor power element heat dissipation board, and conductor plate therefor and heat sink material and solder material |
| US20030152773A1 (en) * | 2002-02-14 | 2003-08-14 | Chrysler Gregory M. | Diamond integrated heat spreader and method of manufacturing same |
| US20030183368A1 (en) * | 2002-04-02 | 2003-10-02 | Paradis Leo Richard | Diamond heat sink |
| CN1499620A (en) * | 2002-11-07 | 2004-05-26 | ��ʽ�������Ƹ��� | Radiator and semiconductor element using such radiator and semiconductor packing body |
| US20060220194A1 (en) * | 2005-03-31 | 2006-10-05 | Osenbach John W | Controlling warping in integrated circuit devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4055276B2 (en) * | 1998-01-16 | 2008-03-05 | 住友電気工業株式会社 | Semiconductor package and semiconductor module using the package |
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- 2010-05-27 JP JP2010121535A patent/JP5466578B2/en not_active Expired - Fee Related
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- 2011-05-24 CN CN201110145074.0A patent/CN102263073B/en not_active Expired - Fee Related
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3520923A1 (en) * | 1984-06-16 | 1985-12-19 | Ngk Spark Plug Co., Ltd., Nagoya, Aichi | Process for positive joining of ceramic materials to metals by means of an aluminium brazing solder |
| JPH05277845A (en) * | 1992-03-27 | 1993-10-26 | Toyo Kohan Co Ltd | Manufacture of vapor phase synthetic diamond coated tool |
| US5423475A (en) * | 1993-10-06 | 1995-06-13 | Westinghouse Electric Corporation | Diamond coatings for aluminum alloys |
| US6335863B1 (en) * | 1998-01-16 | 2002-01-01 | Sumitomo Electric Industries, Ltd. | Package for semiconductors, and semiconductor module that employs the package |
| JP2001274302A (en) * | 2000-03-28 | 2001-10-05 | Jsr Corp | Heat transfer sheet and method for manufacturing the same |
| US20020191378A1 (en) * | 2000-10-31 | 2002-12-19 | Hitachi, Ltd. | Semiconductor power element heat dissipation board, and conductor plate therefor and heat sink material and solder material |
| US20030152773A1 (en) * | 2002-02-14 | 2003-08-14 | Chrysler Gregory M. | Diamond integrated heat spreader and method of manufacturing same |
| US20030183368A1 (en) * | 2002-04-02 | 2003-10-02 | Paradis Leo Richard | Diamond heat sink |
| CN1499620A (en) * | 2002-11-07 | 2004-05-26 | ��ʽ�������Ƹ��� | Radiator and semiconductor element using such radiator and semiconductor packing body |
| US20060220194A1 (en) * | 2005-03-31 | 2006-10-05 | Osenbach John W | Controlling warping in integrated circuit devices |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107849646A (en) * | 2015-07-13 | 2018-03-27 | 株式会社Uacj | aluminium alloy brazing sheet |
| CN111162448A (en) * | 2020-02-17 | 2020-05-15 | 济南大学 | Semiconductor laser heat sink with graphical structure and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011249576A (en) | 2011-12-08 |
| CN102263073B (en) | 2015-02-18 |
| JP5466578B2 (en) | 2014-04-09 |
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