CN102262091B - Detection device and detection method for dynamic process of material micro-area structure change - Google Patents
Detection device and detection method for dynamic process of material micro-area structure change Download PDFInfo
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Abstract
The device is provided with two paths of lasers, wherein the first path of laser acts with a material to change the structure of the material microcell, and the second path of laser detects the dynamic process of the structural change. In the invention, a CCD imaging method and piezoelectric ceramics are utilized to automatically adjust a sample to the focus position of the first path of laser, and an objective lens with high numerical aperture is utilized to obtain the structural change of a micro area; the two paths of laser are coaxial and vertically incident to the surface of the sample, and light spots formed on the surface of the sample by the two paths of laser are observed simultaneously by using the CCD, so that the light spots of the two paths of laser can be accurately superposed, and the dynamic process of detecting the structural change of a smaller area is facilitated; the utilization rate of the laser is improved by utilizing the polarization beam splitter prism and the quarter wave plate, the two coaxial lasers are completely separated by utilizing the dispersion prism and the total reflection principle, the influence of non-detection light is removed, and the detection precision is improved.
Description
Technical field
The present invention relates to the optical detection field, particularly a kind of pick-up unit and detection method of material domain structure change kinetics process.
Background technology
Along with the development of laser technology, the laser-induced material structure changes and uses more and more widely, and like integrated circuit, solar cell, optical device etc., the dynamic process that material structure changes is also by research more and more.In the material structure change procedure; Dynamic process and thermodynamic process complement each other, and thermodynamic process is meant extraneous condition of its recurring structure being changed for one of material, and dynamic process is meant the dynamic process that material structure changes; The research of this process helps that not only material character is had further understanding; Like material crystalline state and amorphous conversion, can also be used for measurement, like the measurement of membraneous material thickness to some parameter of material.
A kind of measurement model commonly used has two-way laser at present; One tunnel laser vertical acts on sample surfaces, another road laser oblique incidence, and the reach with first via laser on sample surfaces overlaps; The second road laser is received by detector after the sample reflection; When first via laser changed material structure, the light intensity of the second road laser changed, and the signal that detects changes.But the method is unfavorable for utilizing CCD to observe the position of two-way laser; In order to make the second road laser can detect structural change; The reach of first via laser needs bigger, the focal position that this often will make sample surfaces depart from first via laser, and this just needs to improve laser power; Moreover first via laser action needs through having the lens of focussing force before on the material surface; In order not influence the second road laser propagation, this focal length of lens can not be too short, more can not use the high object lens of numerical aperture; This needs further to improve laser power, and needs bigger space.
In order to address the above problem, the present invention proposes first via laser and the second road laser coaxial impinges perpendicularly on the scheme of sample surfaces, and utilize CCD can observe two-way laser simultaneously, can make this two-way laser inregister, sample does not need out of focus; Among the present invention, short condenser lens or the higher object lens of numerical aperture of available focal length focus on first via laser, compact conformation, the utilization factor of raising laser.
Summary of the invention
The object of the present invention is to provide a kind of pick-up unit and method of material domain structure change kinetics process; But this device test material is under laser action; The process that structure changes also can be observed material after laser action, the result that structure changes.
Technical solution of the present invention is following:
A kind of material domain structure change kinetics process pick-up unit, characteristics are that its formation comprises:
Output wavelength is λ
1First laser instrument of laser, along being the first spectrum spectroscope, beam expanding lens, the second spectrum spectroscope successively on the laser main beam of this first laser instrument output, the described first spectrum spectroscope becomes 45 ° of placements with the second spectrum spectroscope with main beam; Main beam is object lens and testing sample through the reflection of the second spectrum spectroscope in this reflected light direction successively; Described object lens are fixed on the piezoelectric ceramics; Described sample places can be on the two-dimension moving platform of X axle and Y direction motion;
Having output wavelength is λ
2The laser of second laser instrument output of laser incide the described first spectrum spectroscope through polarization splitting prism, quarter-wave plate; After this first spectrum spectroscope reflection, advance along described main beam; This laser returns along former road after described sample reflection; Through the reflection of described polarization splitting prism,, be dispersing prism, the 3rd spectrum spectroscope, aperture, condenser lens and detector successively along this reflected light direction; Described the 3rd spectrum spectroscope and wavelength are λ
2The working direction of laser become 45 ° of placements;
White light source; The white light of this white light source output is after semi-transparent semi-reflecting spectroscope reflection; Pass through the described second spectrum spectroscope, object lens, sample successively, this white light returns along former road after the sample reflection, after described semi-transparent semi-reflecting spectroscope transmission, reaches the CCD camera;
The input end of described first laser instrument is connected with first output terminal of signal generator; The output terminal of described signal generator second output terminal and described detector is connected with oscillographic input end; The control end of described second laser instrument, signal generator, piezoelectric ceramics, two dimensional motion translation stage all is connected with the output terminal of computing machine, and described CCD camera links to each other with described input end and computer with oscillographic output terminal.
The wavelength that described second laser instrument sends is λ
2The wavelength that sends of laser and described first laser instrument be λ
1The hot spot that forms on the surface of described sample of laser overlap.
The wavelength that described second laser instrument sends is λ
2The polarization direction of laser consistent with the transmitted light polarization direction of said polarization splitting prism.
The angle of described dispersing prism is placed and satisfied: the wavelength that is sent by described first laser instrument is λ
1Laser total reflection takes place on the exit facet of this dispersing prism, the wavelength that is sent by described second laser instrument is λ
2Laser on the exit facet of this dispersing prism, see through;
The described first spectrum spectroscope is to wavelength X
1The transmissivity of laser is more than 90%, to wavelength X
2The reflectivity of laser is more than 90%.
The described second spectrum spectroscope is λ to wavelength
1The reflectivity of laser more than 90%, be λ to wavelength
2The reflectivity of laser more than 90%, to the transmission of visible light of other wavelength in the white light source more than 50%.
Described the 3rd spectrum spectroscope is λ to wavelength
1The reflectivity of laser more than 90%, be λ to wavelength
2The transmissivity of laser more than 90%.
Described CCD camera not only can obtain the described sample surfaces characteristic that described white light source illuminates, and can to obtain by the wavelength that described first laser instrument sends be λ
1The wavelength that sends of laser and second laser instrument be λ
2The hot spot characteristic that forms at described sample surfaces of laser.
The method of utilizing described material domain structure change kinetics process pick-up unit to measure comprises the following steps:
1. the oscilloscope signal receiving mode is set:
Described oscillographic signal receiving modes is arranged to rising edge trigger action pattern, and the signal that sends described signal generator is as the triggering source, and when signal generator sends a rising edge pulse signal, it is λ that described first laser instrument sends wavelength
1Laser, oscillograph recording this moment is by the data of described detector and signal generator input signal;
2. utilize the CCD camera imaging, the searching wavelength is λ
1The focal position of laser:
The described signal generator of described computer control sends the low level direct current signal, and this signal outputs to described first laser instrument, and it is λ that this laser instrument sends the lower wavelength of power
1Laser; Simultaneous computer is controlled described second laser instrument and is not sent laser; Described sample is placed on the described two-dimension moving platform, adjusts described samples vertical, regulate described two-dimension moving platform, the tested point of sample is positioned on the just right-hand focus of described object lens in the primary optical axis direction;
The input voltage of the described piezoelectric ceramics of computer control makes piezoelectric ceramics be parallel to primary optical axis direction generation micro-displacement, laser λ
1Size and brightness at the hot spot of sample surfaces formation also changes through object lens; This hot spot is imaged on the described CCD camera, the half-tone information of the hot spot on the described CCD camera of computer acquisition, and maximum when the gray-scale value of hot spot, then the tested point of described sample surfaces and wavelength are λ
1Laser overlap through the focus that object lens form;
3. measure the dynamic process that the material domain structure changes:
The input voltage of described second laser instrument of described computer installation, making second laser instrument send wavelength is λ
2Laser, this input voltage is a DC voltage, the wavelength that this magnitude of voltage determines second laser instrument to send is λ
2The power of laser; It is λ that second laser instrument sends wavelength
2The power of laser lower, guarantee described sample surfaces not recurring structure change; This wavelength is λ
2Laser after sample reflection, forming the wavelength that has the dynamic information that the sample domain structure changes is λ
2Laser, received by described detector;
Regulate the unit length of described oscillographic transverse axis and the unit length of the longitudinal axis, make its in time with amplitude on the waveform of the required measurement that can show; Oscillograph is in waits for the triggering state, regulate triggering level, make its high level less than required measured waveform;
According to measurement requirement, amplitude, the pulse width of the described signal generator output of computer installation signal, it is λ that the amplitude of this signal determines described first laser instrument to send wavelength
1The power of laser, the pulse width decision wavelength of this signal is λ
1Laser and the action time of described sample; The computer control signal generator sends pulse, triggers described first laser instrument and oscillograph simultaneously, and it is λ that first laser instrument sends wavelength
1Laser action on sample, the wavelength that has the dynamic information that the sample domain structure changes that reflects through described sample that the signal generator that described oscillograph writes down this moment simultaneously sends that pulse waveform and described detector survey is λ
2The waveform of laser; After signal generator sends a pulse signal, the described signal generator shutdown signal of computer control; The wavelength that has the dynamic information that the sample domain structure changes that reflects through described sample that pulse waveform that described oscillograph sends the tracer signal generator and described detector are surveyed is λ
2The waveform of laser send described Computer Storage;
4. the direction of motion of computer installation two-dimension moving platform and move distance, mobile example to a new position to be measured utilizes the new position to be measured of CCD camera looks sample surfaces whether damage is arranged, and when not damaging, then gets into step 6.;
5. when material surface has damage, then continue the position of control two-dimension translational platform mobile example, utilize the new position to be measured of CCD camera looks sample surfaces whether damage is arranged,, get into step 6. up to not damage;
6. repeating step 2. and 3., the dynamic process that the measuring samples domain structure changes;
7. after measuring completion, the domain structure change curve of computer drawing sample can draw the dynamic process that the material domain structure changes.
Technique effect of the present invention:
The present invention adopts laser λ
1With laser λ
2The hot spot that the coaxial object lens that incide, two-way laser form at sample surfaces behind object lens overlaps, and such design makes detecting location more accurate, structural change that can the detecting material microcell; And can observe with CCD simultaneously.
Utilize the CCD camera to gather laser λ among the present invention
1Through the facula information that object lens form at sample surfaces, in conjunction with the electrostrictive effect of piezoelectric ceramics, regulate the relative distance between sample and the object lens, until hot spot gray scale maximum, promptly sample is positioned at laser λ
1On the focus behind the object lens.The repeatability of this method is high, and personal error is few.
Utilize dispersing prism the laser λ that on optical axis, overlaps among the present invention
1With laser λ
2Separately.Laser λ
1With laser λ
2Have different deflection angles after getting into dispersing prism, two-way laser propagation direction is different; At the exit facet of dispersing prism, laser λ
1With laser λ
2Have the different angles of total reflection, adjustment dispersing prism angle can make laser λ
1On this exit facet total reflection takes place, laser λ
2Through this dispersing prism transmission.Compare with general optical filtering, this method can be eliminated laser λ fully
1To the influence of result of detection, improve the accuracy of measuring.
Utilize the polarization characteristic of laser among the present invention, improve the utilization factor of laser.Incident laser λ
2The polarization direction be adjusted to consistently with the direction of shaking thoroughly of polarization splitting prism, it is the highest that transmission power reaches, reflective power is reduced to minimum; The laser λ that propagates forward
2With the laser λ that reflects
2Twice through quarter-wave plate, laser λ
2Change of polarization to vertical with initial polarization direction, promptly vertical with the direction of shaking thoroughly of polarization splitting prism, this moment, reflective power was the highest, transmission power is reduced to minimum.Compare with general semi-transparent semi-reflecting lens, this method can reduce the loss of laser, satisfies detector in light intensity and surveys under the prerequisite that requires, and can reduce the power of laser, in order to avoid material structure is impacted.
First laser instrument that the present invention adopts sends laser λ
1Power and pulse width can modulate simultaneously through signal generator, amplitude and pulse width that signal generator sends signal determine laser λ respectively
1Output power and pulse width.Different laser power can make just that dissimilar and structural change in various degree takes place material, like type such as crystallization, ablation and in various degree variation separately, but through the dynamic process under the different variations of this research material structure; The asynchronism(-nization) that the different laser pulse width changes the material recurring structure, but the time that changes through this research material recurring structure.
Description of drawings
Fig. 1 is the light channel structure figure of the material domain structure change kinetics process pick-up unit realized of the present invention.
Fig. 2 is the measurement result that the present invention realizes material domain structure change kinetics process under the different laser powers, and Fig. 2 (a) and (b) are respectively the measurement results when laser power is 4.5mw and 7mw.
Fig. 3 is the measurement result that the present invention realizes material domain structure change kinetics process under the different laser pulse widths, and Fig. 3 (a) and (b) are respectively the measurement results when laser pulse width is 2.5us and 5us.
Embodiment
Below in conjunction with embodiment and accompanying drawing the present invention is further specified.
Fig. 1 is the light channel structure figure of the embodiment of material domain structure change kinetics process pick-up unit that realizes of the present invention.As shown in Figure 1; Material domain structure change kinetics process pick-up unit comprises 3 parts: first is the part that laser-induced material microcell changes; Second portion is the part of test material domain structure change kinetics process, and third part is that CCD observes part.
The part that laser-induced material microcell changes: on its primary optical axis, comprise the output laser wavelength lambda successively
1 First laser instrument 1, the first spectrum spectroscope 2, beam expanding lens 3, the second spectrum spectroscope 4, after 90 ° of this spectrum spectroscope reflections, primary optical axis turnover, be object lens 6 and sample 7 successively; The described first spectrum spectroscope 2 becomes 45 ° of placements with the second spectrum spectroscope 4 with primary optical axis; Described object lens 6 are fixed on the piezoelectric ceramics 5; Described sample 7 places can be on the two-dimension moving platform 8 of X axle and Y direction motion.
The part of test material domain structure change kinetics process: comprise the output laser wavelength lambda successively
2 Second laser instrument 9, polarization splitting prism 10, quarter-wave plate 11, the described first spectrum spectroscope 2; After this spectrum spectroscope reflection, advance along primary optical axis; Through described beam expanding lens 3, the second spectrum spectroscope 4, object lens 6, sample 7; This laser returns along former road after described sample 7 reflections; Along the output of the reflected light outbound course of described polarization splitting prism 10, pass through dispersing prism 12, the 3rd spectrum spectroscope 13, aperture 14, condenser lens 15 and detector 16 successively; Described the 3rd spectrum spectroscope 13 and laser λ
2Working direction become 45 ° of placements.The laser λ that described second laser instrument 9 sends
2The laser λ that sends with first laser instrument 1
1On primary optical axis, overlap, and the hot spot that forms on described sample 7 surfaces overlaps; The laser λ that described second laser instrument 9 sends
2The polarization direction be adjusted to consistent with the direction of shaking thoroughly of said polarization splitting prism 10, this moment transmission power reach the highest, laser λ
2Twice its change of polarization is to vertical with the direction of shaking thoroughly of polarization splitting prism 10 through behind described 1/4ths wave plates, and this moment, reflective power was the highest; The angle of described dispersing prism 12 is placed and is satisfied: the laser λ that is sent by described first laser instrument 1
1On the exit facet of this dispersing prism 12 total reflection takes place, the laser λ that is sent by described second laser instrument 9
2Total reflection does not take place on this surface.
CCD observes part: comprise white light source 17, semi-transparent semi-reflecting spectroscope 18 successively; Pass through the described second spectrum spectroscope 4, object lens 6, sample 7 successively along the reflection outbound course of this semi-transparent semi-reflecting spectroscope 18; White light returns along former road after sample 7 reflections; Transmission direction output along described semi-transparent semi-reflecting spectroscope 18 arrives CCD camera 19.Described CCD camera 19 not only can be observed described sample 7 surface characteristics that described white light source 17 illuminates, and can observe the laser λ that is sent by described first laser instrument 1
1The laser λ that sends with second laser instrument 9
2Hot spot characteristic in described sample surfaces formation.
Described first laser instrument 1 is connected with signal generator 20; Described signal generator 20, detector 16 are connected with oscillograph 21; Described second laser instrument 9, CCD camera 19, signal generator 20, oscillograph 21, piezoelectric ceramics 5, two dimensional motion translation stage 8 are connected with computing machine 22.Described signal generator 20 output signals are divided into two-way, output to described first laser instrument 1 and oscillograph 21 respectively; Described oscillograph 21 receives the two-way input signal, respectively from said signal generator 20 and detector 16; Described first laser instrument 1 sends the power parameter and the laser pulse parameters of laser, the signal deciding of being sent by described signal generator 20; The signal parameter that described signal generator 20 sends and second laser instrument 9 send the power parameter of laser, by described computing machine 22 controls.
2 pairs of wavelength X of the described first spectrum spectroscope
1Laser-transmitting rate more than 90%, and to wavelength X
2Laser reflectivity more than 90%; 4 pairs of wavelength X of the described second spectrum spectroscope
1Laser reflectivity more than 90%, to wavelength X
2Laser reflectivity more than 90%, to the transmission of visible light of other wavelength in the white light source 17 more than 50%; 13 pairs of wavelength X of described the 3rd spectrum spectroscope
1Laser reflectivity more than 90%, and to wavelength X
2Laser-transmitting rate more than 90%.
In the present embodiment, it is the laser instrument of 405nm that first laser instrument 1 is selected optical maser wavelength for use, and it is the laser instrument of 660nm that second laser instrument 9 is selected wavelength for use.
The concrete operations step of embodiment is following:
1. the oscilloscope signal receiving mode is set:
The signal receiving modes of oscillograph 21 is arranged to rising edge trigger action pattern; The signal that sends signal generator 20 is as the triggering source; When signal generator 20 sends a rising edge pulse signal; First laser instrument 1 sends the laser that wavelength is 405nm, the data of oscillograph 21 record two-way input signals this moment.
2. utilize the CCD imaging to seek laser λ
1The focal position:
The input voltage of computing machine 22 control piezoelectric ceramics 5; Make piezoelectric ceramics 5 be parallel to primary optical axis direction generation micro-displacement; Because object lens 6 are fixed on the piezoelectric ceramics 5; So the distance between object lens 6 and the sample 7 produces subtle change, make the size and the brightness of the hot spots that 405nm laser process object lens 6 form on sample 7 surfaces change; 405nm laser is imaged on the CCD camera 19 at sample 7 surperficial formed hot spots; The hot spot half-tone information that computing machine 22 is gathered on the CCD camera 19; When 405nm laser focused on sample 7 surfaces, the gray-scale value of hot spot was maximum, computing machine 22 these maximum gradation value of record; The input voltage of computing machine 22 adjustment piezoelectric ceramics 5 makes the hot spot gray-scale value reach maximum, and this moment, 405nm laser focused on sample 7 surfaces.
3. measure the dynamic process that the material domain structure changes:
Through computing machine 22 input voltage of second laser instrument 9 is set, makes it send the laser that wavelength is 660nm, this input voltage is a DC voltage, and output laser is continuous laser, and magnitude of voltage determines second laser instrument 9 to send the performance number of laser; It is lower that second laser instrument 9 sends laser power, avoids making the structure of sample 7 to change; 660nm laser returns along former road after sample 7 reflections, is received by detector 16 at last;
The transverse axis of regulating oscillograph 21 is the unit length of time shaft and the unit length of the longitudinal axis and range value, make its in time with amplitude on the waveform of the required measurement that can show; Oscillograph 21 is in waits for the triggering state, regulate triggering level, make its high level less than required measured waveform;
According to measurement requirement; Amplitude and pulse width through computing machine 22 signalization generators 20 output signals; The amplitude of this signal determines the power of the 405nm laser that first laser instrument 1 sends, the pulse width decision 405nm laser of this signal and the action time of sample 7; Computing machine 22 control-signals generator 20 are sent pulse, and at this moment, first laser instrument 1 sends the 405nm laser action on sample 7, and simultaneously, oscillograph 21 is triggered, record two-way waveform at this moment; After signal generator 20 sends a pulse signal, computing machine 22 its shutdown signals of control; Store measured data.
4. the direction of motion and the move distance of two-dimension moving platform 8 are set through computing machine 22; Mobile example 7 to one repositions; Whether sample surfaces has damage to utilize CCD camera 19 to observe here, if not damage, then repeating step is 2. 3. herein; Change the pulse width and the power of 405nm laser, measure the dynamic process that the material domain structure microcell under another condition changes; If material surface has damage, then continue control two-dimension translational platform 8 mobile examples 7 positions, up to sample just face do not have injury region, 2. 3. repeating step measures the dynamic process that the material domain structure under another condition changes.
5. Fig. 2 is Sb for the measurement result of an embodiment of material domain structure change kinetics process under the present invention the measures different laser powers at the present embodiment sample
2Te
3The numerical aperture of object lens 6 is 0.9, and the signal that signal generator 20 outputs to first laser instrument 1 is that pulse width all is the individual pulse signal of 5ms, in Fig. 2 (a), two kinds of situation of Fig. 2 (b); Signal generator 20 output signal high level are respectively 4.0v, 4.5v; Corresponding laser power is respectively 4.5mw, 7mw, and low level all is 0v, shown in curve V1; Laser action causes the material domain structure to change, and its dynamic process is shown in curve V2.The middle material structure of Fig. 2 (a) changes more not obvious, is observed by CCD, and laser action place material surface is a white point, and material generation crystallization is ablated; The middle material structure of Fig. 2 (b) changes more obvious, is observed by CCD, and laser action place material surface is big stain, and material is ablated.
Fig. 3 is Sb for the measurement result of an embodiment of material domain structure change kinetics process under the present invention the measures different laser pulse widths at the present embodiment sample
2Te
3The numerical aperture of object lens 6 is 0.9, and the signal that signal generator 20 outputs to first laser instrument 1 is that high level all is the individual pulse signal of 4.9v, and corresponding laser power is 10mw; Low level all is 0v; In Fig. 3 (a), two kinds of situation of Fig. 3 (b), signal generator 20 output signal pulses width are respectively 2.5us, 5.0us, shown in curve V1; Laser action causes the material domain structure to change, and its dynamic process is shown in curve V2.Can be drawn by curve, the material domain structure is not when receiving laser radiation, to change, but behind about 200ns, structure changes; And after the material domain structure changed a lot, even laser continues irradiation, domain structure no longer changed, and shown in Fig. 3 (b), laser continues irradiation, and material structure no longer changes.
Foregoing embodiment is exemplary, should not limit protection scope of the present invention with this.
Claims (9)
1. material domain structure change kinetics process pick-up unit is characterised in that its formation comprises:
The output laser wavelength lambda
1First laser instrument (1); Along being the first spectrum spectroscope (2), beam expanding lens (3), the second spectrum spectroscope (4) successively on the laser main beam of this first laser instrument (1) output, the described first spectrum spectroscope (2) becomes 45 ° of placements with the second spectrum spectroscope (4) with main beam; Main beam is object lens (6) and testing sample (7) through the reflection of the second spectrum spectroscope (4) in this reflected light direction successively; Described object lens (6) are fixed on the piezoelectric ceramics (5); Described sample (7) places can be on the two-dimension moving platform (8) of X axle and Y direction motion;
Having output wavelength is λ
2The laser of second laser instrument (9) output of laser incide the described first spectrum spectroscope (2) through polarization splitting prism (10), quarter-wave plate (11); After this first spectrum spectroscope (2) reflection, advance along described main beam; This laser returns along former road after described sample (7) reflection; Reflection through described polarization splitting prism (10); Along this reflected light direction, be dispersing prism (12), the 3rd spectrum spectroscope (13), aperture (14), condenser lens (15) and detector (16) successively; Described the 3rd spectrum spectroscope (13) is λ with wavelength
2The working direction of laser become 45 ° of placements;
White light source (17); The white light of this white light source (17) output is after semi-transparent semi-reflecting spectroscope (18) reflection; Pass through the described second spectrum spectroscope (4), object lens (6), sample (7) successively; This white light returns along former road after sample (7) reflection, after described semi-transparent semi-reflecting spectroscope (18) transmission, reaches CCD camera (19);
The input end of described first laser instrument (1) is connected with first output terminal of signal generator (20); The output terminal of described signal generator (20) second output terminals and described detector (16) is connected with the input end of oscillograph (21); The control end of described second laser instrument (9), signal generator (20), piezoelectric ceramics (5), two dimensional motion translation stage (8) all is connected with the output terminal of computing machine (22), and the output terminal of described CCD camera (19) and oscillograph (21) links to each other with the input end of described computing machine (22).
2. material domain structure change kinetics process pick-up unit according to claim 1 is characterized in that the wavelength that described second laser instrument (9) sends is λ
2Laser, the wavelength that sends with described first laser instrument (1) is λ
1The hot spot that forms on the surface of described sample (7) of laser overlap.
3. material domain structure change kinetics process pick-up unit according to claim 1 is characterized in that the wavelength that described second laser instrument (9) sends is λ
2The polarization direction of laser consistent with the transmitted light polarization direction of said polarization splitting prism (10).
4. material domain structure change kinetics process pick-up unit according to claim 1, it is characterized in that the angle of described dispersing prism (12) is placed satisfied: the wavelength that is sent by described first laser instrument (1) is λ
1Laser total reflection takes place on the exit facet of this dispersing prism, the wavelength that is sent by described second laser instrument (9) is λ
2Laser on the exit facet of this dispersing prism, see through.
5. material domain structure change kinetics process pick-up unit according to claim 1 is characterized in that the described first spectrum spectroscope (2) is to wavelength X
1The transmissivity of laser is more than 90%, to wavelength X
2The reflectivity of laser is more than 90%.
6. material domain structure change kinetics process pick-up unit according to claim 1 is characterized in that the described second spectrum spectroscope (4) is λ to wavelength
1The reflectivity of laser more than 90%, be λ to wavelength
2The reflectivity of laser more than 90%, to the transmission of visible light of other wavelength in the white light source (17) more than 50%.
7. material domain structure change kinetics process pick-up unit according to claim 1 is characterized in that described the 3rd spectrum spectroscope (13) is λ to wavelength
1The reflectivity of laser more than 90%, be λ to wavelength
2The transmissivity of laser more than 90%.
8. material domain structure change kinetics process pick-up unit according to claim 1; It is characterized in that described CCD camera (19) not only can obtain described sample (7) surface characteristics that described white light source (17) illuminates, and can to obtain by the wavelength that described first laser instrument (1) sends be λ
1The wavelength that sends of laser and second laser instrument (9) be λ
2The hot spot characteristic that forms on described sample (7) surface of laser.
9. the method for utilizing each described material domain structure change kinetics process pick-up unit of claim 1 to 8 to measure is characterized in that comprising the following steps:
1. the oscilloscope signal receiving mode is set:
The signal receiving modes of described oscillograph (21) is arranged to rising edge trigger action pattern; The signal that sends described signal generator (20) is as the triggering source; When signal generator (20) sends a rising edge pulse signal, it is λ that described first laser instrument (1) sends wavelength
1Laser, oscillograph (21) record this moment is by the data of described detector (16) and signal generator (20) input signal;
2. utilize CCD camera (19) imaging, the searching wavelength is λ
1The focal position of laser:
Described computing machine (22) is controlled described signal generator (20) and is sent the low level direct current signal, and this signal outputs to described first laser instrument (1), and it is λ that this laser instrument sends the lower wavelength of power
1Laser; Simultaneous computer (22) described second laser instrument of control (9) does not send laser; Described sample (7) is placed on the described two-dimension moving platform (8), adjusts described sample (7), regulate described two-dimension moving platform (8), the tested point of sample (7) is positioned on the just right-hand focus of described object lens (6) perpendicular to the primary optical axis direction;
Computing machine (22) is controlled the input voltage of described piezoelectric ceramics (5), makes piezoelectric ceramics (5) be parallel to primary optical axis direction generation micro-displacement, laser λ
1Size and brightness at the hot spot of sample (7) surface formation also changes through object lens (6); This hot spot is imaged on the described CCD camera (19), and computing machine (22) is gathered the half-tone information of the hot spot on the described CCD camera (19), and maximum when the gray-scale value of hot spot, the tested point and the wavelength on then described sample (7) surface are λ
1Laser overlap through the focus that object lens (6) form;
3. measure the dynamic process that the material domain structure changes:
Described computing machine (22) is provided with the input voltage of described second laser instrument (9), and making second laser instrument (9) send wavelength is λ
2Laser, this input voltage is a DC voltage, the wavelength that this magnitude of voltage determines second laser instrument (9) to send is λ
2The power of laser; It is λ that second laser instrument (9) sends wavelength
2The power of laser lower, guarantee that on described sample (7) surface recurring structure changes; This wavelength is λ
2Laser after sample (7) reflection, forming the wavelength that has the dynamic information that sample (7) domain structure changes is λ
2Laser, received by described detector (16);
Regulate unit length and the unit length of the longitudinal axis of the transverse axis of described oscillograph (21), make its in time with amplitude on the waveform of the required measurement that can show; Oscillograph (21) is in waits for the triggering state, regulate triggering level, make its high level less than required measured waveform;
According to measurement requirement, computing machine (22) is provided with amplitude, the pulse width of described signal generator (20) output signal, and it is λ that the amplitude of this signal determines described first laser instrument (1) to send wavelength
1The power of laser, the pulse width decision wavelength of this signal is λ
1Laser and the action time of described sample (7); Computing machine (22) control-signals generator (20) is sent pulse, triggers described first laser instrument (1) and oscillograph (21) simultaneously, and it is λ that first laser instrument (1) sends wavelength
1Laser action on sample (7), the wavelength that has the dynamic information that sample (7) domain structure changes that reflects through described sample (7) that the signal generator (20) that described oscillograph (21) writes down this moment simultaneously sends that pulse waveform and described detector (16) survey is λ
2The waveform of laser; After signal generator (20) sent a pulse signal, computing machine (22) was controlled described signal generator (20) shutdown signal; The wavelength that has the dynamic information that sample (7) domain structure changes that reflects through described sample (7) that pulse waveform that described oscillograph (21) sends tracer signal generator (20) and described detector (16) are surveyed is λ
2The waveform of laser send described computing machine (22) storage;
4. computing machine (22) is provided with the direction of motion and the move distance of two-dimension moving platform (8); Mobile example (7) is to a new position to be measured; Utilize new position to be measured, CCD camera (19) observation sample (7) surface whether damage is arranged, when not damaging, then get into step 6.;
5. when material surface has damage, then continue the position of control two-dimension translational platform (8) mobile example (7), utilize new position to be measured, CCD camera (19) observation sample (7) surface whether damage is arranged,, get into step 6. up to not damage;
6. repeating step 2. and 3., the dynamic process that measuring samples (7) domain structure changes;
7. after measuring completion, the domain structure change curve of computer drawing sample (7) can draw the dynamic process that the material domain structure changes.
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| TWI467156B (en) * | 2011-12-21 | 2015-01-01 | Ind Tech Res Inst | Liquid crystal cell properties measuring apparatus and liquid crystal cell properties measuring method |
| CN108931783B (en) * | 2018-08-20 | 2023-09-12 | 中国科学院上海技术物理研究所 | Device and method for measuring performance of laser ranging system with high precision |
| CN109164064B (en) * | 2018-09-28 | 2023-08-25 | 中国工程物理研究院激光聚变研究中心 | Device and method for accurately measuring refractive index change value of single-layer chemical film |
| CN109406562B (en) * | 2018-11-17 | 2024-01-30 | 金华职业技术学院 | Device for researching phase change of sample under high pressure |
| CN110686618B (en) * | 2019-11-22 | 2020-09-15 | 北京理工大学 | Aspheric parameter error interferometry method and system combining total reflection angle positioning |
| CN113899738B (en) * | 2021-09-23 | 2024-04-12 | 中国科学院上海光学精密机械研究所 | Single-layer and multi-layer micro-nano structure graph sample tracking device and method |
| CN114544498B (en) * | 2022-02-21 | 2024-04-12 | 中国科学院上海光学精密机械研究所 | Photoetching sample and micro-nano structure tracking device and method |
| CN115575341B (en) * | 2022-12-07 | 2023-04-18 | 之江实验室 | Self-healing material characterization method based on transmission spectrum change |
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