CN102257609B - 具有隔离的微结构的微机电器件及其生产方法 - Google Patents

具有隔离的微结构的微机电器件及其生产方法 Download PDF

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Publication number
CN102257609B
CN102257609B CN200980150738.3A CN200980150738A CN102257609B CN 102257609 B CN102257609 B CN 102257609B CN 200980150738 A CN200980150738 A CN 200980150738A CN 102257609 B CN102257609 B CN 102257609B
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nitride
layer
trench
polysilicon
sacrificial
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Chinese (zh)
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CN102257609A (zh
Inventor
L·Z·张
L·H·卡尔林
R·B·蒙特兹
朴佑泰
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NXP USA Inc
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Freescale Semiconductor Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00642—Manufacture or treatment of devices or systems in or on a substrate for improving the physical properties of a device
    • B81C1/00698—Electrical characteristics, e.g. by doping materials

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Pressure Sensors (AREA)
CN200980150738.3A 2008-12-19 2009-11-25 具有隔离的微结构的微机电器件及其生产方法 Expired - Fee Related CN102257609B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/340,202 US7943525B2 (en) 2008-12-19 2008-12-19 Method of producing microelectromechanical device with isolated microstructures
US12/340,202 2008-12-19
PCT/US2009/065905 WO2010080229A1 (en) 2008-12-19 2009-11-25 Microelectromechanical device with isolated microstructures and method of producing same

Publications (2)

Publication Number Publication Date
CN102257609A CN102257609A (zh) 2011-11-23
CN102257609B true CN102257609B (zh) 2014-02-12

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Country Status (5)

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US (1) US7943525B2 (OSRAM)
JP (1) JP5602761B2 (OSRAM)
CN (1) CN102257609B (OSRAM)
TW (1) TW201034933A (OSRAM)
WO (1) WO2010080229A1 (OSRAM)

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US20100289065A1 (en) * 2009-05-12 2010-11-18 Pixart Imaging Incorporation Mems integrated chip with cross-area interconnection
TW201109267A (en) * 2009-09-08 2011-03-16 Jung-Tang Huang A general strength and sensitivity enhancement method for micromachined devices
TWI388496B (zh) * 2010-01-12 2013-03-11 Maxchip Electronics Corp 微機電系統結構及其製造方法
EP2426083A3 (en) * 2010-09-03 2013-11-13 Domintech Co., LTD. Mems sensor package
CN108470679B (zh) * 2011-01-25 2022-03-29 Ev 集团 E·索尔纳有限责任公司 用于永久接合晶片的方法
CN102183677B (zh) 2011-03-15 2012-08-08 迈尔森电子（天津）有限公司 集成惯性传感器与压力传感器及其形成方法
US8673756B2 (en) * 2011-04-14 2014-03-18 Robert Bosch Gmbh Out-of-plane spacer defined electrode
US8610222B2 (en) 2011-04-18 2013-12-17 Freescale Semiconductor, Inc. MEMS device with central anchor for stress isolation
US8846129B2 (en) * 2012-02-13 2014-09-30 Taiwan Semiconductor Manufacturing Company, Ltd. Biological sensing structures and methods of forming the same
US8828772B2 (en) * 2012-03-05 2014-09-09 Taiwan Semiconductor Manufacturing Co., Ltd. High aspect ratio MEMS devices and methods for forming the same
US9469522B2 (en) * 2013-03-15 2016-10-18 Robert Bosch Gmbh Epi-poly etch stop for out of plane spacer defined electrode
US9079763B2 (en) 2013-04-22 2015-07-14 Freescale Semiconductor, Inc. MEMS device with stress isolation and method of fabrication
US9034679B2 (en) 2013-06-25 2015-05-19 Freescale Semiconductor, Inc. Method for fabricating multiple types of MEMS devices
DE102014202820A1 (de) * 2014-02-17 2015-08-20 Robert Bosch Gmbh Schichtenanordnung für ein mikromechanisches Bauelement
US9617142B1 (en) * 2015-09-30 2017-04-11 Mems Drive, Inc. MEMS grid for manipulating structural parameters of MEMS devices
EP3153851B1 (en) 2015-10-06 2024-05-01 Carrier Corporation Mems die with sensing structures
CN105890827B (zh) * 2016-01-18 2019-05-21 广东合微集成电路技术有限公司 一种电容式压力传感器及其制造方法
US9950920B2 (en) * 2016-01-22 2018-04-24 United Microelectronics Corp. Micro-electro-mechanical system structure and method for forming the same
KR102088584B1 (ko) * 2018-11-28 2020-03-12 한국과학기술원 Mems 멤브레인 구조체 및 그 제조방법
DE102020202262A1 (de) * 2020-02-21 2021-08-26 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung einer nanoskaligen Kanalstruktur
IT202000011755A1 (it) * 2020-05-20 2021-11-20 St Microelectronics Srl Procedimento di fabbricazione di un dispositivo micro-elettro-meccanico, in particolare sensore di movimento con comando/rilevazione di tipo capacitivo, e relativo dispositivo mems
CN113387319B (zh) * 2021-06-11 2023-07-14 中国兵器工业集团第二一四研究所苏州研发中心 基于多通孔硅基板的mems芯片封装结构及其制备方法
CN116902904A (zh) * 2023-07-14 2023-10-20 绍兴中芯集成电路制造股份有限公司 一种mems器件、mems器件的制备方法和电子装置

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US5580815A (en) * 1993-08-12 1996-12-03 Motorola Inc. Process for forming field isolation and a structure over a semiconductor substrate
US6170332B1 (en) * 1993-05-26 2001-01-09 Cornell Research Foundation, Inc. Micromechanical accelerometer for automotive applications
US20040099928A1 (en) * 2002-11-27 2004-05-27 Nunan Thomas K. Composite dielectric with improved etch selectivity for high voltage mems structures
US6960488B2 (en) * 1997-06-13 2005-11-01 The Regents Of The University Of California Method of fabricating a microfabricated high aspect ratio device with electrical isolation

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JP3367113B2 (ja) * 1992-04-27 2003-01-14 株式会社デンソー 加速度センサ
DE69942486D1 (de) 1998-01-15 2010-07-22 Cornell Res Foundation Inc Grabenisolation für mikromechanische bauelemente
JP4214584B2 (ja) * 1998-11-27 2009-01-28 株式会社デンソー 半導体力学量センサおよびその製造方法
US6395644B1 (en) 2000-01-18 2002-05-28 Advanced Micro Devices, Inc. Process for fabricating a semiconductor device using a silicon-rich silicon nitride ARC
DE10065013B4 (de) 2000-12-23 2009-12-24 Robert Bosch Gmbh Verfahren zum Herstellen eines mikromechanischen Bauelements
KR100443126B1 (ko) 2002-08-19 2004-08-04 삼성전자주식회사 트렌치 구조물 및 이의 형성 방법
US6770506B2 (en) 2002-12-23 2004-08-03 Motorola, Inc. Release etch method for micromachined sensors
US6936491B2 (en) 2003-06-04 2005-08-30 Robert Bosch Gmbh Method of fabricating microelectromechanical systems and devices having trench isolated contacts
US20060148133A1 (en) 2005-01-03 2006-07-06 Analog Devices, Inc. Method of forming a MEMS device
US7372617B2 (en) * 2005-07-06 2008-05-13 Peter Enoksson Hidden hinge MEMS device
JP2008080444A (ja) * 2006-09-27 2008-04-10 Toshiba Corp Ｍｅｍｓ素子製造方法およびｍｅｍｓ素子
DE102006052630A1 (de) * 2006-10-19 2008-04-24 Robert Bosch Gmbh Mikromechanisches Bauelement mit monolithisch integrierter Schaltung und Verfahren zur Herstellung eines Bauelements

Patent Citations (4)

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Publication number Priority date Publication date Assignee Title
US6170332B1 (en) * 1993-05-26 2001-01-09 Cornell Research Foundation, Inc. Micromechanical accelerometer for automotive applications
US5580815A (en) * 1993-08-12 1996-12-03 Motorola Inc. Process for forming field isolation and a structure over a semiconductor substrate
US6960488B2 (en) * 1997-06-13 2005-11-01 The Regents Of The University Of California Method of fabricating a microfabricated high aspect ratio device with electrical isolation
US20040099928A1 (en) * 2002-11-27 2004-05-27 Nunan Thomas K. Composite dielectric with improved etch selectivity for high voltage mems structures

Also Published As

Publication number Publication date
US7943525B2 (en) 2011-05-17
JP2012512754A (ja) 2012-06-07
TW201034933A (en) 2010-10-01
WO2010080229A1 (en) 2010-07-15
US20100155861A1 (en) 2010-06-24
CN102257609A (zh) 2011-11-23
JP5602761B2 (ja) 2014-10-08

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