CN102254847B - 等离子体处理装置 - Google Patents

等离子体处理装置 Download PDF

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Publication number
CN102254847B
CN102254847B CN201110127888.1A CN201110127888A CN102254847B CN 102254847 B CN102254847 B CN 102254847B CN 201110127888 A CN201110127888 A CN 201110127888A CN 102254847 B CN102254847 B CN 102254847B
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CN
China
Prior art keywords
mentioned
upper electrode
processing apparatus
annular component
plasma processing
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Expired - Fee Related
Application number
CN201110127888.1A
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English (en)
Chinese (zh)
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CN102254847A (zh
Inventor
饭塚八城
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication of CN102254847A publication Critical patent/CN102254847A/zh
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Publication of CN102254847B publication Critical patent/CN102254847B/zh
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN201110127888.1A 2010-05-17 2011-05-17 等离子体处理装置 Expired - Fee Related CN102254847B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010113262A JP5591585B2 (ja) 2010-05-17 2010-05-17 プラズマ処理装置
JP2010-113262 2010-05-17

Publications (2)

Publication Number Publication Date
CN102254847A CN102254847A (zh) 2011-11-23
CN102254847B true CN102254847B (zh) 2014-04-02

Family

ID=44971468

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110127888.1A Expired - Fee Related CN102254847B (zh) 2010-05-17 2011-05-17 等离子体处理装置

Country Status (5)

Country Link
US (1) US20110284165A1 (ko)
JP (1) JP5591585B2 (ko)
KR (1) KR101755313B1 (ko)
CN (1) CN102254847B (ko)
TW (1) TWI517281B (ko)

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Publication number Priority date Publication date Assignee Title
JP5432686B2 (ja) * 2009-12-03 2014-03-05 東京エレクトロン株式会社 プラズマ処理装置
JP5444044B2 (ja) * 2010-03-02 2014-03-19 東京エレクトロン株式会社 プラズマ処理装置及びシャワーヘッド
US8869742B2 (en) * 2010-08-04 2014-10-28 Lam Research Corporation Plasma processing chamber with dual axial gas injection and exhaust
JP2014056987A (ja) * 2012-09-13 2014-03-27 Tokyo Electron Ltd プラズマ処理装置
US9490149B2 (en) * 2013-07-03 2016-11-08 Lam Research Corporation Chemical deposition apparatus having conductance control
US9349605B1 (en) * 2015-08-07 2016-05-24 Applied Materials, Inc. Oxide etch selectivity systems and methods
KR102479923B1 (ko) * 2018-08-22 2022-12-20 어플라이드 머티어리얼스, 인코포레이티드 고밀도 플라즈마 강화 화학 기상 증착 챔버
CN112309807B (zh) * 2019-08-02 2022-12-30 中微半导体设备(上海)股份有限公司 等离子体刻蚀设备
TWI731463B (zh) * 2019-11-06 2021-06-21 聚昌科技股份有限公司 側向擾流式高均勻度感應耦合電漿蝕刻機之製造方法及其結構
CN113745081B (zh) * 2020-05-27 2024-03-12 中微半导体设备(上海)股份有限公司 一种隔离环组件、等离子体处理装置及处理方法
CN113972124B (zh) * 2020-07-23 2023-09-29 中微半导体设备(上海)股份有限公司 一种接地组件及其等离子体处理装置与工作方法
CN114388322A (zh) * 2020-10-19 2022-04-22 中微半导体设备(上海)股份有限公司 一种等离子体处理装置及其气体喷淋环的制作方法

Citations (1)

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Publication number Priority date Publication date Assignee Title
CN101533764A (zh) * 2008-03-14 2009-09-16 东京毅力科创株式会社 喷淋头和基板处理装置

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US4209357A (en) * 1979-05-18 1980-06-24 Tegal Corporation Plasma reactor apparatus
JPS6012735A (ja) * 1983-07-01 1985-01-23 Hitachi Ltd エツチング装置
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
JP3121524B2 (ja) * 1995-06-07 2001-01-09 東京エレクトロン株式会社 エッチング装置
TW327236B (en) * 1996-03-12 1998-02-21 Varian Associates Inductively coupled plasma reactor with faraday-sputter shield
JPH09306896A (ja) * 1996-03-15 1997-11-28 Sumitomo Metal Ind Ltd プラズマ処理装置およびプラズマ処理方法
US6210539B1 (en) * 1997-05-14 2001-04-03 Applied Materials, Inc. Method and apparatus for producing a uniform density plasma above a substrate
US6537418B1 (en) 1997-09-19 2003-03-25 Siemens Aktiengesellschaft Spatially uniform gas supply and pump configuration for large wafer diameters
JP3002448B1 (ja) * 1998-07-31 2000-01-24 国際電気株式会社 基板処理装置
US6471830B1 (en) * 2000-10-03 2002-10-29 Veeco/Cvc, Inc. Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system
WO2002033729A2 (en) * 2000-10-16 2002-04-25 Tokyo Electron Limited Plasma reactor with reduced reaction chamber
US20050103265A1 (en) * 2003-11-19 2005-05-19 Applied Materials, Inc., A Delaware Corporation Gas distribution showerhead featuring exhaust apertures
US20070080141A1 (en) * 2005-10-07 2007-04-12 Applied Materials, Inc. Low-voltage inductively coupled source for plasma processing
US20070202701A1 (en) * 2006-02-27 2007-08-30 Tokyo Electron Limited Plasma etching apparatus and method
JP5179389B2 (ja) * 2008-03-19 2013-04-10 東京エレクトロン株式会社 シャワーヘッド及び基板処理装置
TWI495402B (zh) * 2008-10-09 2015-08-01 Applied Materials Inc 具有射頻迴流路徑之電漿處理腔室
JP5432686B2 (ja) * 2009-12-03 2014-03-05 東京エレクトロン株式会社 プラズマ処理装置

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Also Published As

Publication number Publication date
CN102254847A (zh) 2011-11-23
KR20110126556A (ko) 2011-11-23
JP5591585B2 (ja) 2014-09-17
JP2011243688A (ja) 2011-12-01
KR101755313B1 (ko) 2017-07-07
TW201216395A (en) 2012-04-16
TWI517281B (zh) 2016-01-11
US20110284165A1 (en) 2011-11-24

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CF01 Termination of patent right due to non-payment of annual fee