CN102254816A - Method for improving surface performance of reclaiming wafer and method for depositing SiOx thin film on reclaiming wafer - Google Patents
Method for improving surface performance of reclaiming wafer and method for depositing SiOx thin film on reclaiming wafer Download PDFInfo
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- CN102254816A CN102254816A CN2010101813468A CN201010181346A CN102254816A CN 102254816 A CN102254816 A CN 102254816A CN 2010101813468 A CN2010101813468 A CN 2010101813468A CN 201010181346 A CN201010181346 A CN 201010181346A CN 102254816 A CN102254816 A CN 102254816A
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Abstract
The invention provides a method for improving a surface performance of a reclaiming wafer. The improvement method comprises an annealing treatment in a nitrogen-containing atmosphere. Besides, the invention also provides a method for depositing a SiOx thin film on the reclaiming wafer. The deposition method comprises the following steps: providing a reclaiming wafer; carrying out an annealing treatment on the reclaiming wafer in a nitrogen-containing atmosphere; and depositing a SiOx thin film on the reclaiming wafer. According to the deposition method, there are no strip defects on the surface of the SiOx thin film; a utilization rate of the reclaiming wafer is improved and cost is saved.
Description
Technical field
The present invention relates to the semiconductor fabrication techniques field, relate in particular to a kind of method of improving the method for reconstituted wafers surface property and on reconstituted wafers, depositing the oxygen-rich oxide silicon thin film.
Background technology
In fabrication of semiconductor device, hundreds of road manufacture craft is arranged, wherein, each road manufacture craft all needs to monitor, at this moment just need the lower test wafer of use cost, whether come the characterization processes parameter correct, and ensure the production yield of product, these wafers that are used for process monitoring are commonly called control sheet (Control wafer) or washer (Dummy wafer).
Before, this test all can abandon with wafer later, but fast development along with industry, it is big and more and more expensive that scantling becomes, after 6 cun wafers, progressively begin to reclaim and utilize these test wafers once more, be called the cost of controlling sheet (Control wafer) or washer (Dummy wafer) with reduction, the wafer that these recovery reuse just is called as reconstituted wafers.
Reconstituted wafers be with the pollutants such as film on the used test wafer grind, polishing, and the continuous program of recycling is thinned to certain below restriction up to wafer thickness, just really abandons or demotes and use as solar base plate.
At oxygen-rich oxide silicon (SiOx, wherein the span of X is 1.35-1.88) in the manufacture craft of film, the present inventor finds, use wafer if adopt reconstituted wafers as detecting, described detection with wafer on after the deposition oxygen-rich oxide silicon thin film, strip defective (linear defect) can appear in crystal column surface, adopt normal test then this problem can not occur with wafer, shown in accompanying drawing 1a and accompanying drawing 1b, be respectively and adopt normal wafer and reconstituted wafers to form the defect map of oxygen-rich oxide silicon thin film crystal column surface appearance afterwards thereon, as can be seen from the figure, again with after the reconstituted wafers deposition oxygen-rich oxide silicon thin film, crystal column surface produces a large amount of strip defectives, and adopts after the normal wafer deposition oxygen-rich oxide silicon thin film, and crystal column surface does not produce the strip defective basically.
With reference to the accompanying drawings shown in 2, after reconstituted wafers deposition oxygen-rich oxide silicon thin film, the sem photograph of the strip defective that crystal column surface produces.The defective of this strip has had a strong impact on the film performance of test with crystal column surface, thereby causes test result substantial deviation actual conditions.
Summary of the invention
The problem that the present invention solves provides a kind of method of improving the reconstituted wafers surface property, produces the problem of strip defective to avoid prior art surface after reconstituted wafers surface deposition film.
The invention provides a kind of method of improving the reconstituted wafers surface property, comprising: in containing the atmosphere of nitrogen, carry out annealing in process.
Optionally, the temperature range of described annealing is 400 to 600 degrees centigrade, and the time is 200 to 400s.
Optionally, the temperature of described annealing is 500 degrees centigrade, and the time is 300s.
The present invention also provides a kind of method that deposits the oxygen-rich oxide silicon thin film on reconstituted wafers, comprising: reconstituted wafers is provided; Reconstituted wafers is carried out annealing in process in containing the atmosphere of nitrogen; Deposition oxygen-rich oxide silicon thin film on reconstituted wafers.
Optionally, the temperature range of described annealing is 400 to 600 degrees centigrade, and the time is 200 to 400s.
Optionally, the temperature of described annealing is 500 degrees centigrade, and the time is 300s.
Owing to adopted technique scheme, compared with prior art, the present invention has the following advantages:
By in containing the atmosphere of nitrogen, carrying out annealing in process, after reconstituted wafers surface deposition oxygen-rich oxide silicon thin film, find that the thin layer surface the strip defective can not occur again.Adopt described method, improved the utilance of reconstituted wafers, provide cost savings.
Description of drawings
Fig. 1 is respectively and adopts normal wafer and reconstituted wafers to form the defect map of oxygen-rich oxide silicon thin film crystal column surface appearance afterwards thereon;
Fig. 2 deposits for reconstituted wafers after the oxygen-rich oxide silicon thin film, the sem photograph of the strip defective that crystal column surface produces;
Fig. 3 is after the described method of the employing embodiment of the invention is handled reconstituted wafers, at reconstituted wafers surface deposition oxygen-rich oxide silicon thin film, and the defect map of oxygen-rich oxide silicon film surface;
Fig. 4 is after the described method of employing present embodiment of the present invention is handled reconstituted wafers, at reconstituted wafers surface deposition oxygen-rich oxide silicon thin film, and the projection electron microscope figure of oxygen-rich oxide silicon film surface;
Fig. 5 adopts present embodiment of the present invention to deposit the process chart of the method for oxygen-rich oxide silicon thin film on reconstituted wafers.
Embodiment
According to the description in the background technology, the inventor is after reconstituted wafers surface deposition oxygen-rich oxide silicon thin film, and the strip defective appears in film surface.For this reason, the inventor has carried out further research, to determine to occur the reason of described defective.At first, the consersion unit that carries out the oxygen-rich oxide silicon deposited film is checked and tested, therefore each reaction chamber (chamber) that found that consersion unit, can get rid of the possibility that reaction chamber goes wrong and causes defective to produce in order.
Next, the inventor carries out the depositing operation of other retes in same reaction chamber, discovery deposits after other retes in same reaction chamber, the strip defective does not appear in the surface of other retes, so the particulate situation in the proved response chamber is not to cause the oxygen-rich oxide silicon film surface reason of strip defective to occur.
Subsequently, adopt a plurality of reconstituted wafers in reaction chamber, to deposit the oxygen-rich oxide silicon thin film, discovery is for the reconstituted wafers of different qualities, after the deposition oxygen-rich oxide silicon thin film, all can there be similar strip defective in film surface, adopts after the normal test wafer deposition oxygen-rich oxide silicon thin film, and then can there be the strip defective in film surface, therefore, illustrate that reconstituted wafers is the reason that produces the strip defective.By described strip defective being carried out focused ion beam (Focused Ion Beam, FIB) analysis and projection electron microscope analysis, the main component of finding the strip defective is oxygen and silicon, proof strip defective is film internal flaw (infilmparticle), has verified that further reconstituted wafers is the reason that produces the strip defective.
Below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
Present embodiment provides a kind of method of improving the reconstituted wafers surface property, comprising: carry out annealing in process in containing the atmosphere of nitrogen.
Optionally, the temperature range of described annealing is 400 degrees centigrade to 600 degrees centigrade, and the time is 200s to 400s (second).In a specific embodiment, the temperature of described annealing is 500 degrees centigrade, and the time is 300s.
By in containing the atmosphere of nitrogen, carrying out annealing in process, after reconstituted wafers surface deposition oxygen-rich oxide silicon thin film, find that the thin layer surface the strip defective can not occur again.Adopt described method, improved the utilance of reconstituted wafers, provide cost savings.
With reference to the accompanying drawings shown in 3, for adopting after the described method of present embodiment handles reconstituted wafers, in reconstituted wafers surface deposition oxygen-rich oxide silicon thin film, the defect map of oxygen-rich oxide silicon film surface, as can be seen from the figure, the oxygen-rich oxide silicon thin film does not almost have the strip defective.
With reference to the accompanying drawings shown in 4, for adopting after the described method of present embodiment handles reconstituted wafers, at reconstituted wafers surface deposition oxygen-rich oxide silicon thin film, the projection electron microscope figure of oxygen-rich oxide silicon film surface, as can be seen from the figure, the oxygen-rich oxide silicon film surface does not have the strip defective to occur.
Because reconstituted wafers is that the pollutants such as film on the used test wafer are ground, polishing, and the program of continuous recycling, therefore for reconstituted wafers, it is ground, the process of polishing, lattice defect and crystal dislocation on the wafer are increased, in the process of its surface deposition oxygen-rich oxide silicon thin film, owing to adopt about 500 degrees centigrade high temperature, therefore, increase in the wafer deposition rate that produces the lattice defect direction, thereby cause the surface to produce the strip defective, by described annealing in process, can eliminate described lattice defect, and crystal dislocation is improved, therefore, can avoid in the technology of reconstituted wafers surface deposition oxygen-rich oxide silicon thin film, producing the strip defective.
Present embodiment also provides a kind of method that deposits the oxygen-rich oxide silicon thin film on reconstituted wafers, comprising: step s1: reconstituted wafers is provided; Step s2: reconstituted wafers is carried out annealing in process in containing the atmosphere of nitrogen; Step s3: deposition oxygen-rich oxide silicon thin film on reconstituted wafers.
Described reconstituted wafers is conventional control sheet (Control wafer) or washer (Dummy wafer), through removing the rete on surface, carries out recycling.
Reconstituted wafers is carried out the processing step of annealing in process in containing the atmosphere of nitrogen, can eliminate described lattice defect, and crystal dislocation is improved, optionally, the temperature range of described annealing is 400 degrees centigrade to 600 degrees centigrade, and the time is 200s to 400s.Optionally, the temperature of described annealing is 500 degrees centigrade, and the time is 300s.
The technology of described deposition oxygen-rich oxide silicon thin film for example is chemical vapor deposition method, in a specific embodiment, adopts SiH
4And N
2O is a raw material deposition oxygen-rich oxide silicon thin film, and range of reaction temperature is 400-600 degree centigrade, and preferably 500 degrees centigrade, the thickness range of the oxygen-rich oxide silicon thin film of formation is 810 dusts～900 dusts.
In a specific embodiment of the present invention, adopt the described process of present embodiment, the number of defects on reconstituted wafers surface is 632 before carrying out annealing process, the number of defects on reconstituted wafers surface is 14 after the employing annealing process, adopt depositing operation after carrying out the reconstituted wafers surface deposition oxygen-rich oxide silicon thin film of annealing process, the defective added value on reconstituted wafers surface is 0.
By in containing the atmosphere of nitrogen, carrying out annealing in process, after reconstituted wafers surface deposition oxygen-rich oxide silicon thin film, find that the thin layer surface the strip defective can not occur again.Adopt described method, improved the utilance of reconstituted wafers, provide cost savings.
Though oneself discloses the present invention as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can do various changes and modification, so protection scope of the present invention should be as the criterion with claim institute restricted portion.
Claims (6)
1. a method of improving the reconstituted wafers surface property is characterized in that, comprising: carry out annealing in process in containing the atmosphere of nitrogen.
2. the method for improving the reconstituted wafers surface property according to claim 1 is characterized in that, the temperature range of described annealing is 400 to 600 degrees centigrade, and the time is 200 to 400s.
3. the method for improving the reconstituted wafers surface property according to claim 2 is characterized in that, the temperature of described annealing is 500 degrees centigrade, and the time is 300s.
4. the method for a deposition oxygen-rich oxide silicon thin film on reconstituted wafers is characterized in that, comprising: reconstituted wafers is provided; Reconstituted wafers is carried out annealing in process in containing the atmosphere of nitrogen; Deposition oxygen-rich oxide silicon thin film on reconstituted wafers.
5. according to claim 1 on reconstituted wafers the method for deposition oxygen-rich oxide silicon thin film, it is characterized in that the temperature range of described annealing is 400 to 600 degrees centigrade, the time is 200 to 400s.
6. the method that deposits the oxygen-rich oxide silicon thin film on reconstituted wafers according to claim 2 is characterized in that the temperature of described annealing is 500 degrees centigrade, and the time is 300s.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2010101813468A CN102254816A (en) | 2010-05-21 | 2010-05-21 | Method for improving surface performance of reclaiming wafer and method for depositing SiOx thin film on reclaiming wafer |
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| CN2010101813468A CN102254816A (en) | 2010-05-21 | 2010-05-21 | Method for improving surface performance of reclaiming wafer and method for depositing SiOx thin film on reclaiming wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113270312A (en) * | 2021-05-13 | 2021-08-17 | 中国振华集团永光电子有限公司（国营第八七三厂） | Method for improving CVD surface defects |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1290028A (en) * | 1999-09-27 | 2001-04-04 | 中国科学院半导体研究所 | Technology for preparing semiconductor substrate |
| US6660657B1 (en) * | 2000-08-07 | 2003-12-09 | Micron Technology, Inc. | Methods of incorporating nitrogen into silicon-oxide-containing layers |
| TW200717615A (en) * | 2005-08-05 | 2007-05-01 | Tokyo Electron Ltd | In-situ atomic layer deposition |
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- 2010-05-21 CN CN2010101813468A patent/CN102254816A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1290028A (en) * | 1999-09-27 | 2001-04-04 | 中国科学院半导体研究所 | Technology for preparing semiconductor substrate |
| US6660657B1 (en) * | 2000-08-07 | 2003-12-09 | Micron Technology, Inc. | Methods of incorporating nitrogen into silicon-oxide-containing layers |
| TW200717615A (en) * | 2005-08-05 | 2007-05-01 | Tokyo Electron Ltd | In-situ atomic layer deposition |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113270312A (en) * | 2021-05-13 | 2021-08-17 | 中国振华集团永光电子有限公司（国营第八七三厂） | Method for improving CVD surface defects |
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Application publication date: 20111123 |