CN101378024B - Method for detecting wafer defect - Google Patents
Method for detecting wafer defect Download PDFInfo
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- CN101378024B CN101378024B CN2007100454856A CN200710045485A CN101378024B CN 101378024 B CN101378024 B CN 101378024B CN 2007100454856 A CN2007100454856 A CN 2007100454856A CN 200710045485 A CN200710045485 A CN 200710045485A CN 101378024 B CN101378024 B CN 101378024B
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Abstract
The invention discloses a method for detecting the defects of a wafer and relates to the detection field of semiconductors. The method includes the following steps of: selecting a detection area, which is a circular area and takes the center of a wafer as the circle center, with the radius being one tenth to one fifth of that of the wafer; selecting more than 49 radial detection points uniformly distributed in the detection area; and analyzing each detection point and finding the position of defects. Compared with the prior art, by arranging more detection points in a smaller area, the methodcan effectively detect the tiny defects appearing in the center area of the wafer, thus improving the production conditions of wafers in time and increasing the wafer yield.
Description
Technical field
The present invention relates to the detection technique of semiconductor applications, specifically, relate to a kind of detection method of wafer defect.
Background technology
At high-density plasma reaction (High density plasma, when abbreviation " HDP ") carrying out deposition step in the equipment, generally to be plasma at the reative cell (chamber) of HDP equipment distribute evenly more flows stablely more, and the thickness of the sedimentary deposit that forms at crystal column surface is also even more.Therefore in order to improve the uniformity of crystal column surface deposit thickness, the top of reative cell and sidepiece all are provided with equally distributed gas inlet and radio-frequency voltage.
Though adopt the reative cell of said structure can make the deposit thickness of crystal column surface even, a plurality of air inlets are not easy control, if the gas flow instability of certain air inlet is easy to form defective at crystal column surface.The central area of the corresponding wafer of reactor top air inlet is affected especially easily.In addition, if when wafer has only the central area to have tiny flaw, adopt conventional detection can't detect the position of defective.Such wafer can go wrong in successive process, causes wafer loss when serious.For example, if defective occurs during wafer shallow groove deposited oxide layer, carry out in the wet etching at follow-up nitration case to wafer so, the oxide layer that produces defective also can be destroyed by etched solution.Destroy the space that produces and filled by polysilicon in subsequent deposition polysilicon step, the phenomenon that is short-circuited causes wafer loss, causes and produces waste.
In view of this, need provide a kind of detection method of new wafer defect to overcome above-mentioned defective.
Summary of the invention
The technical problem that the present invention solves is to provide the detection method of the wafer defect that improves the product yield.
For solving the problems of the technologies described above, the invention provides a kind of detection method of wafer defect, it comprises the steps: selected surveyed area, and this surveyed area is to be the center of circle with the crystal circle center, and radius is the border circular areas of wafer radius 1/10th to 1/5th; Choose several and be the equally distributed test point of radioactivity in this surveyed area, test point is greater than 49; Each test point is analyzed, found out the position of defective.
Compared with prior art, detection method of the present invention by at wafer than the zonule, more test point is set, thereby can effectively detects the tiny defect that crystal circle center zone occurs, and in time improve the working condition of wafer, played the beneficial effect of the rate of finished products that has improved wafer.
Embodiment
Below the detection method of wafer defect disclosed by the invention is described in further detail.
The wafer that with the diameter is 200mm is an example, when wafer after the reative cell of HDP equipment carries out deposition step, adopt detection method disclosed by the invention that this wafer is carried out defects detection.At first choosing surveyed area, is the center of circle with the center of wafer, and radius is that the circle of 10mm is a surveyed area.The radius of surveyed area be generally wafer radius 1/10th and 1/5th between, even diameter wafer is 300mm, then the radius of surveyed area is 15-30mm.
Choose several test points then in surveyed area, test point is that benchmark is radioactivity and evenly distributes with the crystal circle center.Test point distributes intensive more, and testing result is accurate more, if but quantity is too many, can lower detection efficiency, so present embodiment test point optimal number is 181.
At last the test point of choosing is analyzed, determined whether this wafer exists defective.And find out the particular location of defective at wafer.
Whether the wafer that adopts detection method of the present invention can detect effectively behind the deposition step exists defective, if exist defective can in time safeguard HDP equipment or adjusting process condition, avoids causing and produces waste.
Be understandable that, foregoing only is the description to detection method specific embodiment of the present invention, do not cause any qualification, be not limited to detect, can also be applied to other processing procedures that semiconductor device is made at the wafer that carries out behind the deposition step as detection method of the present invention.
Claims (4)
1. the detection method of a wafer defect is characterized in that, this detection method comprises: selected surveyed area, and this surveyed area is to be the center of circle with the crystal circle center, radius is the border circular areas of wafer radius 1/10th to 1/5th; Choose several and be the equally distributed test point of radioactivity in this surveyed area, test point is greater than 49; Each test point is analyzed, found out the position of defective.
2. detection method as claimed in claim 1 is characterized in that: the radius of surveyed area is 1/10th of a wafer radius.
3. detection method as claimed in claim 1 is characterized in that: choose 181 test points in this surveyed area.
4. detection method as claimed in claim 1 is characterized in that: the radius of surveyed area is 10mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100454856A CN101378024B (en) | 2007-08-31 | 2007-08-31 | Method for detecting wafer defect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2007100454856A CN101378024B (en) | 2007-08-31 | 2007-08-31 | Method for detecting wafer defect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101378024A CN101378024A (en) | 2009-03-04 |
| CN101378024B true CN101378024B (en) | 2010-07-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2007100454856A Active CN101378024B (en) | 2007-08-31 | 2007-08-31 | Method for detecting wafer defect |
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| CN (1) | CN101378024B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102130031B (en) * | 2010-01-18 | 2013-02-13 | 上海华虹Nec电子有限公司 | Method for detecting wafer |
| CN102689366A (en) * | 2011-03-23 | 2012-09-26 | 正恩科技有限公司 | *-character searching method of wafer fragment edge |
| CN102435629B (en) * | 2011-11-28 | 2015-01-21 | 上海华力微电子有限公司 | Detection method of scanning electron microscope |
| CN103151287B (en) * | 2013-02-20 | 2015-07-29 | 上海华力微电子有限公司 | A kind of method of assembling location determination problem process margins according to wafer defect |
| CN105719993B (en) * | 2016-03-01 | 2018-05-01 | 上海华力微电子有限公司 | A kind of method of correcting electronic microscope electron beam and wafer position deviation |
| CN106903072A (en) * | 2017-03-21 | 2017-06-30 | 湖南师范大学 | Defect inspection method |
| CN110727247B (en) * | 2018-07-17 | 2022-10-04 | 敖翔科技股份有限公司 | Defect operation system and device for semiconductor factory |
| CN112697703A (en) * | 2019-10-22 | 2021-04-23 | 超能高新材料股份有限公司 | Wafer defect detection and alignment device |
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2007
- 2007-08-31 CN CN2007100454856A patent/CN101378024B/en active Active
Non-Patent Citations (2)
| Title |
|---|
| JP平4-65143A 1992.03.02 |
| JP特开平7-283278A 1995.10.27 |
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| CN101378024A (en) | 2009-03-04 |
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