CN102246276B - Workpiece cooling method and system for transferring heat away - Google Patents

Workpiece cooling method and system for transferring heat away Download PDF

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Publication number
CN102246276B
CN102246276B CN200980149410XA CN200980149410A CN102246276B CN 102246276 B CN102246276 B CN 102246276B CN 200980149410X A CN200980149410X A CN 200980149410XA CN 200980149410 A CN200980149410 A CN 200980149410A CN 102246276 B CN102246276 B CN 102246276B
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workpiece
heat
gas
transmitted
leaving
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CN102246276A (en
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史帝文·R·沃特
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Varian Semiconductor Equipment Associates Inc
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Varian Semiconductor Equipment Associates Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/002—Cooling arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/2001—Maintaining constant desired temperature

Abstract

A workpiece cooling system and method are disclosed. Transferring heat away from a workpiece, such as a semiconductor wafer during ion implantation, is essential. Typically this heat is transferred to the workpiece support, or platen. In one embodiment, the desired operating temperature is determined. Based on this, a gas having a vapor pressure within a desired range, such as 10-50 torr, is selected. This range is required to be sufficiently low so as to be less than the clamping force. This condensible gas is used to fill the volume between the workpiece and the workpiece support. Heat transfer occurs based on adsorption and desorption, thereby offering improved transfer properties than traditionally employed gases, such as helium, hydrogen, nitrogen, argon and air.

Description

Heat is transmitted the method and system that leaves from workpiece
Technical field
The invention relates to a kind of semiconductor manufacturing, and particularly relevant for a kind of cooling system for cooling workpiece (workpiece).
Background technology
Ion Implantation Equipment generally is used for the manufacturing of semiconductor crystal wafer.Ion source is in order to producing ion beam, and ion beam then is directed toward wafer.When ionic bombardment (strike) wafer, mix in its specific region to wafer.The configuration of doped region (configuration) defines its function, and via the use of conductor intraconnections (conductive interconnect), these wafers can be changed into complicated circuit.
Fig. 1 is the block schematic diagram of typical Ion Implantation Equipment 100.Ion source 110 produces required ionic species (species).In certain embodiments, these kinds are atomic ion (atomic ion), and it is suitable for the high energy of implanting most.In other embodiments, these kinds are molecular ion (molecular ion), and it is suitable for the low energy of implanting.These ions form bunch (beam), and it is then by source filter (source filter) 120.Source filter preferably is positioned near the ion source.Ion in the ion beam is accelerated/is decelerated to the energy rank of wanting (energy level) in cylinder (column) 130.Use has the mass analyzer magnet (mass analyzer magnet) 140 in parsing hole (aperture) 145 to remove unwanted composition from ion beam, makes the ion beam 150 with required energy and mass property pass and resolves hole 145.
In certain embodiments, ion beam 150 is bundles (spot beam).In this example, ion beam passes scanner 160.Scanner 160 can be electrostatic scanner or magnetic scanner.Scanner 160 deflects ion beam 150, to produce scanning beam 155～157.In certain embodiments, scanner 160 comprises the scanning board that separates (scan plate) that carries out communication (communication) with scanning generator (scan generator).The scanning generator produces the scanning voltage waveform, such as the sinusoidal waveform with amplitude and frequency component, sawtooth waveform or triangular waveform.These scanning voltage waveforms are applied on the scanning board.In a preferred embodiment, sweep waveform makes scanning beam stop the identical time that is close in each position usually very near triangular wave (fixed slope).Can be used to make ion beam to reach even from leg-of-mutton departing from.The electric field that produces causes the ion beam bifurcated, as shown in Figure 1.
In another embodiment, ion beam 150 is ribbon beam (ribbon beam).In this embodiment, do not need scanner, ribbon beam is shaped according to suitable mode.
Angle corrector (angle corrector) the 170th is used for ion beam 155～157 with bifurcated to be deflected into one group and to have the ion beam of parallel orbit (trajectories) in fact.Preferably, angle corrector 170 comprises magnetic coil (magnet coil) and a plurality of pole pieces (magnetic pole pieces), and these magnetic coils and pole piece separate to form the gap each other, and ion beam passes from the gap.Magnetic coil is endowed energy, and producing magnetic field in the gap, and ion beam deflects according to intensity and the direction in the magnetic field that applies.See through the electric current adjustable magnetic fields that changes the magnetic coil of flowing through.Alternatively, other structures such as parallelization lens (parallelizing lens) also can be used to carry out this function.
Through after the angle corrector 170, scanning beam alignment pieces 175.Workpiece is attached on the workpiece support.Workpiece support provides multiple move angle.
Workpiece support is used for wafer is remained on the appropriate location and wafer is carried out orientation, so that ion beam is suitably implanted wafer.For wafer is remained on the appropriate location effectively, most workpiece support (also being called platform) uses revolving force (circular force) usually and workpiece is still on the workpiece support.Usually, platform uses electrostatic force that workpiece is remained on the appropriate location.By producing strong electrostatic force (also being called electrostatic chuck (chuck)) at platform, need not any mechanical fastening system and just workpiece or wafer can be remained on the appropriate location.Thus, pollution is reduced to minimum, and circulation timei, (cycle time) was improved, because wafer need not dismounting after finishing implantation.These suckers use one of two kinds of power that wafer is remained on the appropriate location usually: Coulomb attraction (coulombic force) or Jansen-La Bake power (Johnson-Rahbeck force).
Workpiece support generally can be on one or more directions travelling workpiece.For instance, in ion was implanted, ion beam was generally scanning beam or ribbon beam, and it has the width greater than height.The width of supposing ion beam is defined as the x axle, and the height of ion beam is defined as the y axle, and the mobile route of ion beam is defined as the z axle.The width of ion beam generally is wider than workpiece, makes that workpiece does not need to move in the x direction.Yet, be common along y axle travelling workpiece whole work-piece is exposed to ion beam.
Another critical function of workpiece support is for providing heat radiation (heat sink) to workpiece.For instance, in the process that ion is implanted, lot of energy (with the form of heat) is transferred into workpiece.Mixed and disorderly unordered heat may be treated the characteristic of implanting workpiece and impact.Therefore, be preferably heat transmitted and leave workpiece and be sent to workpiece support.Then, workpiece support removes hot type.In certain embodiments, the fluid conduit in the workpiece support of flowing through, these conduits make heat be transferred to fluid and leave workpiece support.The method of other cooling workpiece support also is known in the art.
In certain embodiments, heat is sent to workpiece support via the contact of the physics between two elements from workpiece simply.Yet test shows, because the flaw of abutment surface and coarse even workpiece contacts with workpiece support physics, on the microcosmic degree, only has few relatively actual contact between two elements.
Above-mentioned ion implant system preferred means is in the environment near vacuum state.In fact, the pressure in this environment is generally less than 10 -5Torr.Because context near absolute vacuum, does not therefore have other can transmit the media of heat.Therefore, heat transmits far fewer than desired.
A kind of technology that the heat of improvement from workpiece to workpiece support transmits is for using " rear end (back side) gas ".Fig. 2 is the schematic diagram of technology for this reason.Briefly, workpiece 200 uses machineries or electrostatic equipment and is fixed in workpiece support.Then, the conduit 220 in the workpiece support 210 is sent to space between workpiece 200 and the workpiece support 210 that is wafer/platform interface with gas 250.
Fig. 3 is the schematic diagram of hot transfer mechanism.Heat takes place when gas molecule collision workpiece 200 transmit, to absorb the heat from workpiece 200.Then, gas molecule collision workpiece support 210 is to be sent to workpiece support with heat.Workpiece support is as radiator and keep acceptable temperature.In certain embodiments, workpiece support by the fluid that makes the cooling duct 230 of flowing through by cooling off.The rear end gas flow can (mass flow controller MFC) 240 controls by the matter stream controller.
Because therefore the increase (for example by increasing pressure) that these transmit the gas molecule quantity of heat has improved hot transmission.Yet the pressure of rear end gas has higher limit, and along with the increase of rear end gas pressure, it begins to overcome bed knife (clamping forces), therefore makes workpiece pushed away from workpiece support.This has reduced the actual physics contact between two surfaces, and has obviously reduced hot transmission.The phenomenon of this minimizing occurs under the low-down pressure, and for example the pressure in the ion implantation environment is less than 50Torr.Excessive pressure also can cause workpiece is caused damage.In addition, the quantity that increases molecule in order to increase the collision between the molecule also can cause heat between the solid to transmit reducing.
As mentioned above, along with gas molecule is accepted to be sent to workpiece support from the heat of workpiece and with heat, rear end gas helps heat to transmit.As is well known, have the effect that heat transmits at gas-solid interface, it is according to the type of gas molecule and the type of solid.This effect is by adjustment factor (accommodation coefficient) expression, and its value circle is between 0 (not having heat transmits) and 1 (optimal heat transmission).Adjustment factor (α) is commonly defined as:
α＝(T r-T i)/(T s-T i)
T rTemperature for reflection molecule (that is, the gas molecule behind the surface of solids is left in reflection);
T iTemperature for incident molecule (that is the gas molecule before the bump surface of solids);
T sTemperature for the surface of solids.
Compare with heavier gas (for example nitrogen, argon gas and air), lighter gas (for example helium and hydrogen) generally has lower adjustment factor.In addition, transmit because some solids are compared the heat that provides preferable with other, the surface of solids is conducive to adjustment factor.Please refer to Fig. 3, suppose that the adjustment factor between gas molecule and workpiece 200 is α 1, and the adjustment factor between gas molecule and workpiece support 210 is α 2When the molecular collision workpiece, these molecule absorption from the heat of workpiece (with adjustment factor α 1Proportional).Afterwards, these molecular collision workpiece supports 210 are to transmit heat (with adjustment factor α 2Proportional).Therefore, the actual heat between workpiece and the workpiece support transmits and α 1* α 2Proportional.For instance, if adjustment factor is 0.9 at an interface with specific gas, and adjustment factor is 0.7 at another interface of gas therewith, and then to transmit only be 63% effect to the heat between two interfaces.Heavier gas can increase these coefficients, yet lighter gas molecule moves comparatively fast, and therefore more promptly transmits heat.This may cause being partial to the lighter gas of use but not heavier gas, and no matter the difference of adjustment factor.
In many environment, it is very important that workpiece is remained on predetermined temperature range.Therefore, it is indispensable effectively heat being sent to workpiece support from workpiece.Therefore, development is favourable in order to the System and method for of promoting workpiece (the particularly semiconductor crystal wafer in the ion implant system) cooling.
Summary of the invention
Prior art problems can overcome by the work-piece cools System and method among the application.Typically, heat is transferred into workpiece support or platform.In one embodiment, required operating temperature is determined.Based on this, select the gas with the vapour pressure (for example 10torr to 50torr) in required scope.This scope must be enough low, so that be lower than bed knife.This condensable gases is in order to insert the space between workpiece and the workpiece support.Based on adsorbing (adsorption) and going absorption (desorption), the heat transmission takes place, compare with the gas (for example helium, hydrogen, nitrogen, argon gas and air) that tradition is used, improved transmission characteristic is provided by this.
Description of drawings
Fig. 1 is the schematic diagram of traditional Ion Implantation Equipment.
Fig. 2 is the workpiece that illustrates according to an embodiment and the profile of workpiece support.
Fig. 3 is the schematic diagram of the hot transfer mechanism of prior art.
Fig. 4 is the schematic diagram of hot transfer mechanism of the present invention.
Fig. 5 is the flow chart according to the employed fabrication steps of an embodiment.
Embodiment
As mentioned above, the temperature of keeping workpiece (for example semiconductor crystal wafer in the ion implantation manufacture process) is necessary.To be sent to workpiece support (it is physical property ground contact workpiece) from the heat of workpiece (for example platform) in order to the present technology dependence of keeping workpiece temperature.Some embodiment increase hot transfer mechanism by transmitting " rear end gas " in the space between workpiece and workpiece support.These gas molecules are in order to send heat from workpiece (or heat of a part) to workpiece support.Yet as mentioned above, this hot transfer mechanism is also effective not as what imagine.
Please refer to Fig. 2, it shows the section of workpiece support 210 and workpiece 200.Workpiece support can have two kinds of conduits.Conduit 220 is directed to the rear end of workpiece, the space between workpiece and the workpiece support with gas 250.The gas 250 preferable central memories (central reservoir) that are stored in, accumulator tank (tank) for example, and can pass the matter stream controller or pressure regulator 240 passes flowing of conduit 220 to regulate it.In certain embodiments, minor groove 260 is provided in to make gas 250 closely go into the space so that clear path to be provided in the upper surface of workpiece support 210.MFC or pressure regulator 240 control gas flow are to reach required gas pressure.As mentioned above, because excessive pressure may make workpiece leave workpiece support and maybe may damage workpiece, therefore controlled pressure is preferable modestly.
In certain embodiments, second conduit 230 is used for cooling off the fluid of workpiece support in order to circulation.For instance, water, air or suitable cooling agent (coolant) can be circulated through the conduit 230 of workpiece inside, so that platform is left in thermal steering.
Each ion implantation manufacture process has predetermined operating temperature range.For instance, many ions are implanted in 0 ℃ to 50 ℃ the temperature range and carry out, and more generally carry out under room temperature (15 ℃ to 30 ℃).Other can also carry out at low temperatures, for example are being lower than under-50 ℃.Other can also at high temperature carry out, and for example are being higher than under 100 ℃.Once determine required opereating specification, then select suitable gas.Gas should have enough low vapour pressure under required operating temperature.For instance, at room temperature, the have an appointment vapour pressure of 20Torr of glassware for drinking water.Implant for the low temperature at-100 ℃, propane has similar vapour pressure.Ammonia (ammonia, NH 3) also be suitable for low temperature and implant.At-80 ℃, the vapour pressure of ammonia is about 30Torr.Implant for high temperature, can use for example material of glycerol (glycerine), its vapour pressure is about 40Torr at 200 ℃.
As mentioned above, the vapour pressure of the gas in the working region must be lower than the bed knife that puts on the workpiece, does not contact so that workpiece can not suffer damage and keep with workpiece support.In other words, gas institute applied pressure (being multiplied by the area of workpiece) determines to be applied in the direction of leaving workpiece support the power of workpiece.Power bed knife by contrast therewith.Contact with workpiece support in order to keep workpiece, bed knife must be greater than gas pressure (being multiplied by the area of workpiece).Because the area of workpiece is fixed, so gas pressure must be through control to guarantee to satisfy above-mentioned condition.
In many examples, required vapour pressure circle is between the 1Torr to 50Torr, though other scopes also are possible and in the application's scope.Selected gas is transmitted and passes conduit 220.For instance, as mentioned above, at room temperature, glassware for drinking water bounded is in the vapour pressure of 10Torr to 20Torr.Implant for the ion that occurs in room temperature, water vapour is transferred into the space between workpiece and the workpiece support.This can be by using the conduit 220 among Fig. 2 to reach.Use 240 pairs of water vapour pressurizations of MFC or pressure regulator, so that vapor phase and liquid phase are reached balance.When this phenomenon took place, the film 205 of steam was adsorbed on the back side of wafer 200.Film 215 also is adsorbed on the end face of workpiece support 210.By the film that produces gas vapor on each surface, hot transfer mechanism can be changed.
Fig. 4 is the schematic diagram of hot transfer mechanism.In this scheme, the film 205 of gas vapor Molecular Adsorption to the surface of the work.Different stream molecule (at high temperature) is removed (displaced) and is gone absorption from film 205.The molecule of removing then is adsorbed to the film 215 on the end face of workpiece support 210.Come, under the workpiece support temperature that reduces, different molecules then are removed again.Because the molecule that is gone to adsorb (is T under the temperature of solid or under the temperature near solid rApproximate T greatly s), therefore can realize the adjustment factor near 1.
Fig. 5 is the flow chart of aforementioned fabrication steps.As mentioned above, at first, determine required operating temperature (square 400).Then, based on this operating temperature, select suitable gas (square 410).The vapour pressure of this gas is preferably enough low and can not damage workpiece or overcome bed knife under required temperature.As mentioned above, if necessary, can use MFC or pressure regulator 240 to be reduced in operating pressure under the vapour pressure of working fluid.Then, selected gas is sent to space (square 420) between workpiece and the workpiece support.Be preferably, provide time enough in the space, to reach steady-state condition (steady-state conditions) (square 430) to allow gas.When gas pressure equals vapour pressure, then meet steady-state condition.This allows gas absorption on the back side of workpiece and be adsorbed on the end face of workpiece support.In case reach steady-state condition, then can begin to carry out ion implantation manufacture process (square 440).
Shown in square 430, be preferably and before ion implantation manufacture process, make steam reach steady-state condition.This can be realized by several different methods.In one embodiment, the process cycle time, (process cycle time) was lowered, to allow to reach steady-state condition.In other words, in case new workpiece or wafer place on the platform, then begin flowing of steam.Before ion implantation manufacture process begins, consume a large amount of time.This allows vapour pressure and adsorbed film to reach steady state value time.The method is simple, but may influence productivity ratio, and it depends on reaches the required time of balance.
Can use additive method to reduce vapour pressure and reach the required time of steady-state condition.For instance, adsorbed steam blanket can be kept during wafer exchange by the temperature that reduces workpiece support on the workpiece support.Lower temperature will make film liquefaction or freeze.In addition, steam can be guided and be passed porous media (it is the part of workpiece support).At last, before workpiece places workpiece support, with the selected gas of workpiece coating, liquid or material, can reduce the required time.For instance, workpiece can be exposed to water vapour before placing workpiece support, and then was frozen (chilled) to keep water, up to placing on the workpiece support.In one embodiment, use wafer localizer station (wafer orient station) with while coating water vapour and freezing wafer (in position fixing process).After this finishes, wafer is placed on the workpiece support, and along with wafer and workpiece support temperature and the stable state vapour pressure of setting up be established.
Though the application has disclosed the ion implantation, the application is not limited to this embodiment.Method and system described herein can be used in the application of any use workpiece and workpiece support, particularly in vacuum environment.

Claims (15)

1. one kind is transmitted the method for leaving from workpiece with heat when handling workpiece, and described workpiece is installed on the workpiece support, and described method comprises:
A. determine the operating temperature range in order to handle;
B. select gas, have vapour pressure in required scope at described gas under the described operating temperature range;
C. transmit described gas to the space between the end face of the back side of described workpiece and described workpiece support; And
D. handle described workpiece,
Waited for before handling described workpiece that wherein described gas reaches balance in described space, and wherein liquid film results from the described back side of described workpiece and the described end face of described workpiece support, and the power that applies to be remaining on described workpiece on the described workpiece support, and the described vapour pressure of described required scope produces the opposing force less than the described power that keeps described workpiece.
2. from workpiece heat is transmitted the method for leaving during processing workpiece as claimed in claim 1, wherein said gas is transmitted under the pressure of described vapour pressure equaling.
3. from workpiece heat is transmitted the method for leaving during processing workpiece as claimed in claim 1, also be included in the step of cooling off described workpiece support before the mobile treated described workpiece.
4. from workpiece heat is transmitted the method for leaving during processing workpiece as claimed in claim 1, wherein said operating temperature range circle is between 0 ℃ to 50 ℃, and selected described gas comprises water vapour.
5. from workpiece heat is transmitted the method for leaving during processing workpiece as claimed in claim 4, wherein said vapour pressure circle is in 10torr to 50torr.
6. from workpiece heat is transmitted the method for leaving during processing workpiece as claimed in claim 1, wherein said operating temperature range is lower than-50 ℃, and selected described gas comprises ammonia.
7. from workpiece heat is transmitted the method for leaving during processing workpiece as claimed in claim 1, wherein said operating temperature range is higher than 100 ℃, and selected described gas comprises glycerol.
8. from workpiece heat is transmitted the method for leaving during processing workpiece as claimed in claim 1, wherein said processing comprises that ion implants.
9. one kind in order to transmit the system leave from workpiece with heat, and described workpiece is processed under predetermined operating temperature range, and described system comprises:
A. workpiece support, described workpiece is positioned on the described workpiece support, so that the end face of described workpiece support contacts with the back side of described workpiece;
B. for the device that described workpiece is remained on the described workpiece support, described device applies power in described workpiece;
C. conduit is in order to provide the space of gas to the described end face by the described back side of described workpiece and described workpiece support defines; And
D. memory, in order to keep described gas, wherein described gas has vapour pressure under described operating temperature range, and wherein the described vapour pressure that produces the opposing force that puts on described workpiece is less than the described power that is applied to keep described workpiece by described device,
Wherein said gas reached balance in described space before described workpiece is processed, and wherein liquid film results from the described back side of described workpiece and the described end face of described workpiece support.
10. as claimed in claim 9 in order to from workpiece heat is transmitted the system of leaving, wherein said operating temperature range circle is between 0 ℃ to 50 ℃, and described gas comprises water vapour.
11. as claimed in claim 9 in order to from workpiece heat is transmitted the system of leaving, wherein said operating temperature range is lower than-50 ℃, and described gas comprises ammonia.
12. as claimed in claim 9 in order to from workpiece heat is transmitted the system of leaving, wherein said operating temperature range is higher than 100 ℃, and described gas comprises glycerol.
13. as claimed in claim 9 wherein said conduit is arranged in described workpiece support in order to from workpiece heat is transmitted the system of leaving, and described gas passes described workpiece support to described space.
14. as claimed in claim 9 in order to from workpiece heat is transmitted the system of leaving, also comprise matter stream controller or pressure regulator between described memory and described space.
15. as claimed in claim 14 in order to from workpiece heat is transmitted the system of leaving, wherein said matter stream controller is equaling to transmit described gas under the pressure of described vapour pressure.
CN200980149410XA 2008-12-19 2009-12-15 Workpiece cooling method and system for transferring heat away Active CN102246276B (en)

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US12/339,235 2008-12-19
US12/339,235 US20100155026A1 (en) 2008-12-19 2008-12-19 Condensible gas cooling system
PCT/US2009/068002 WO2010080390A2 (en) 2008-12-19 2009-12-15 Condensible gas cooling system

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CN102246276A CN102246276A (en) 2011-11-16
CN102246276B true CN102246276B (en) 2013-08-28

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