CN102242346A - Device and process for growing TiAlN film on surface of aluminum alloy in situ - Google Patents
Device and process for growing TiAlN film on surface of aluminum alloy in situ Download PDFInfo
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- CN102242346A CN102242346A CN2011101790884A CN201110179088A CN102242346A CN 102242346 A CN102242346 A CN 102242346A CN 2011101790884 A CN2011101790884 A CN 2011101790884A CN 201110179088 A CN201110179088 A CN 201110179088A CN 102242346 A CN102242346 A CN 102242346A
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Abstract
The invention relates to a device and a process for growing a TiAlN film on the surface of an aluminum alloy in situ. In the device, an ion injection source 1, a magnetron sputtering target 2, a vacuum system 3, a gas supply system 4, an ion injection control power supply 5, a magnetron sputtering control power supply 6, a rotating workpiece bracket 7 and a plurality of auxiliary observation windows and temperature measuring instruments are arranged on a vacuum chamber of which the vacuum degree is 1*10<-3> to 5*10<-4>Pa and in which a gas medium can be filled, wherein the aluminum alloy is taken as a substrate, titanium is taken as the sputtering target, nitrogen is taken as injected gas, an ion sputtering technology and an ion injection technology are compounded, argon is introduced into an ion sputtering cavity, pure titanium is sputtered by argon ions and deposited on the aluminum alloy, and N ions are injected simultaneously; by utilizing the characteristics of uniform ion sputtering, fine particles, high ion injection binding force and no deformation, the titanium is subjected to ion sputtering on the surface of the aluminum alloy, the N ions are injected simultaneously and are injected ions and a reaction element, and ion sputtering and ion injection are performed according to certain process parameters; a high-hardness TiAlN film is grown on the surface of the aluminum alloy in situ, and the aim of modifying the surface of the aluminum alloy is fulfilled; and the invention has the characteristic of good surface condition, and is precise and controllable.
Description
Technical field
Aluminum alloy surface growth in situ TiAlN membrane unit of the present invention and technology belong to modification of metallic substance plasma surface and ion bombardment thermo-chemical treatment technical field.
Background technology
Existing metal surface properties modification method has a lot, and such as magnetron sputtering, ion sputtering etc., but various technology all has its weak point, and bad such as the magnetron sputtering bonding force, ion implantation speed is slow, and direct projection etc. is arranged.
Aluminium and aluminium alloy density are less, the intensity height, and conduction, thermal conductivity is good, and plasticity and formability are fine, and no low temperature brittleness is easily processed.At present, aluminium and aluminum alloy materials have been widely used in the fields such as building, aviation, military affairs, automobile, navigation, medical treatment.Yet, the wearing no resistance of aluminium, corrosion potential is more negative, serious corrosion.
Electroplate as traditional surface treatment method and also to be used in the surface treatment of aluminium alloy, the plating of aluminium alloy generally be ornamental in order to improve, improve surface hardness and wear resistance, reduction rubbing factor improve oilness, improve surface conductivity and reflecting rate.But electroplating technology is seriously polluted, and the shortcoming of work under bad environment has limited this The Application of Technology again.
Oxide treatment remains the main method that aluminum alloy surface is handled at present, and the one, hard anodizing, another kind are composite anode oxides.But anodic oxidation be unable to do without toxic article such as electrolytic solution.Thermospray is applied to aluminum alloy surface and handles and also to have obtained certain success, but the shortcoming of thermospray poor working environment also is disadvantageous to the surface treatment of aluminium alloy.
High speed development along with modernization industry, the particularly develop rapidly in fields such as aerospace, automobile, building, the application of aluminium alloy in all trades and professions will be more extensive, the singularity requirement of some special conditionss, extreme condition, feasible surface treatment to aluminium alloy has higher requirement, forces people more and more higher to the performance study of aluminium alloy.Some costs are low, pollute less, multielement, multi-level surface recombination technology will become the main direction of future development, the application of the process for modifying surface of, magnetron sputtering auxiliary such as ion implantation, the ion of collection and one, the application of the aluminium film of various performance characteristics will be more and more wider also.
Chinese scholars is attached great importance to the research of Surface Strengthening of Aluminum Alloy, and wherein the surface of titanium or titanium alloy formation TiAlN reinforcement film is exactly one of problem of research.
Summary of the invention
Aluminum alloy surface growth in situ TiAlN membrane unit of the present invention and technology purpose are, are to utilize magnetron sputtering principle and ion implantation effect, for the aluminum alloy surface modification provides a kind of new device and novel process.Thereby realize the aluminum alloy surface modification.
To achieve these goals, the present invention adopts following technical scheme:
A kind of aluminum alloy surface growth in situ TiAlN membrane unit, this device is can reach 1 * 10 in vacuum tightness
-3～5 * 10
-4On the vacuum chamber of Pa and energy fill gas body medium, be provided with source ion implantation; Magnetron sputtering target; Vacuum system; Airing system; Ion implantation control power supply; Magnetron sputtering control power supply; The rotational workpieces support; And some auxiliary viewing window and temperature measurers, magnetron sputtering target is connected with magnetron sputtering control power supply, source ion implantation is connected with ion implantation control power supply, vacuum system, airing system are connected with the vacuum interior space of device respectively, and source ion implantation, magnetron sputtering target, rotational workpieces support all are fixed in the vacuum chamber.
Above-mentioned aluminum alloy surface growth in situ TiAlN membrane unit carries out compound spatter film forming technology, it is characterized in that:
1), at first by mechanical pump, the molecular pump of air-bleed system vacuum chamber being evacuated to vacuum tightness is 1 * 10
-3Pa ~ 2 * 10
-4Pa,
2) cleaning device feeds argon gas to 8.4 * 10
-3Pa is pressurized to 400 volts, and line carries out ion to substrate for 80 milliamperes and cleaned 10 minutes;
3) then charge into the rare gas element argon gas to air pressure to 10 by airing system 4
-1～10
-2About Pa, connect shielding power supply (about power 150W), 200 volts of bias voltages produce aluminum particulate stream and substrate (7) are carried out magnetron sputtering, about 5 minutes; Under the attraction of negative bias, bombard substrate (7) surface;
4) in ion implantation chamber, feed nitrogen, to air pressure 10
-3～10
-2Pa is pressurized to 30,000 volts, the substrate of deposition of aluminum is carried out ion annotate nitrogen, relies on the N ion energy to the substrate bombardment of deposition of aluminum, with Ti, Al, three kinds of element consolutes of N, forms the TiAlN film at substrate surface;
TiAlN thin film composition of the present invention diversification can improve the aluminum alloy surface stress distribution, and products obtained therefrom is fine and close evenly, microhardness is big, and the bonding strength height satisfies the demand of aluminum alloy surface strengthening.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Embodiment
Further specify below in conjunction with accompanying drawing:
As shown in Figure 1, a kind of aluminum alloy surface growth in situ TiAlN membrane unit, this device is can reach 1 * 10 in vacuum tightness
-3～5 * 10
-4On the vacuum chamber of Pa and energy fill gas body medium, be provided with source ion implantation 1, magnetron sputtering target 2, vacuum system 3, airing system 4, ion implantation control power supply 5, magnetron sputtering control power supply 6, rotational workpieces support 7 and some auxiliary viewing window and temperature measurer, magnetron sputtering target 2 is connected with magnetron sputtering control power supply 6, source ion implantation 1 is connected with ion implantation control power supply 5, vacuum system 3, airing system 4 are connected with the vacuum interior space of device respectively, and source ion implantation 1, magnetron sputtering target 2, rotational workpieces support 7 all are fixed in the vacuum chamber.
Above-mentioned aluminum alloy surface growth in situ TiAlN membrane unit carries out compound spatter film forming technology,
1), at first by mechanical pump, the molecular pump of air-bleed system vacuum chamber being evacuated to vacuum tightness is 1 * 10
-3Pa ~ 2 * 10
-4Pa,
2) cleaning device feeds argon gas to 8.4 * 10
-3Pa is pressurized to 400 volts, and line carries out ion to substrate for 80 milliamperes and cleaned 10 minutes;
3) then charge into the rare gas element argon gas to air pressure to 10 by airing system 4
-1～10
-2About Pa, connect shielding power supply (about power 150W), 200 volts of bias voltages produce aluminum particulate stream and substrate (7) are carried out magnetron sputtering, about 5 minutes; Under the attraction of negative bias, bombard substrate (7) surface;
4) in ion implantation chamber, feed nitrogen, to air pressure 10
-3～10
-2Pa is pressurized to 30,000 volts, the substrate of deposition of aluminum is carried out ion annotate nitrogen, relies on the N ion energy to the substrate bombardment of deposition of aluminum, with Ti, Al, three kinds of element consolutes of N, forms the TiAlN film at substrate surface.
Claims (2)
1. aluminum alloy surface growth in situ TiAlN membrane unit, it is characterized in that: this device is can reach 1 * 10 in vacuum tightness
-3～5 * 10
-4On the vacuum chamber of Pa and energy fill gas body medium, be provided with source ion implantation 1, magnetron sputtering target 2, vacuum system 3, airing system 4, ion implantation control power supply 5, magnetron sputtering control power supply 6, rotational workpieces support 7 and some auxiliary viewing window and temperature measurer, magnetron sputtering target is connected with magnetron sputtering control power supply, source ion implantation is connected with ion implantation control power supply, vacuum system, airing system are connected with the vacuum interior space of device respectively, and source ion implantation, magnetron sputtering target, rotational workpieces support all are fixed in the vacuum chamber.
2. one kind is adopted the described aluminum alloy surface growth in situ of claim 1 TiAlN membrane unit, and it is characterized in that: device carries out compound spatter film forming technology and is:
1), at first by mechanical pump, the molecular pump of air-bleed system vacuum chamber being evacuated to vacuum tightness is 1 * 10
-3Pa ~ 2 * 10
-4Pa,
2) cleaning device feeds argon gas to 8.4 * 10
-3Pa is pressurized to 400 volts, and line carries out ion to substrate for 80 milliamperes and cleaned 10 minutes;
3) then charge into the rare gas element argon gas to air pressure to 10 by airing system 4
-1～10
-2About Pa, connect shielding power supply (about power 150W), 200 volts of bias voltages produce aluminum particulate stream and substrate (7) are carried out magnetron sputtering, about 5 minutes; Under the attraction of negative bias, bombard substrate (7) surface;
4) in ion implantation chamber, feed nitrogen, to air pressure 10
-3～10
-2Pa is pressurized to 30,000 volts, the substrate of deposition of aluminum is carried out ion annotate nitrogen, relies on the N ion energy to the substrate bombardment of deposition of aluminum, with Ti, Al, three kinds of element consolutes of N, forms the TiAlN film at substrate surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101790884A CN102242346A (en) | 2011-06-29 | 2011-06-29 | Device and process for growing TiAlN film on surface of aluminum alloy in situ |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101790884A CN102242346A (en) | 2011-06-29 | 2011-06-29 | Device and process for growing TiAlN film on surface of aluminum alloy in situ |
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| Publication Number | Publication Date |
|---|---|
| CN102242346A true CN102242346A (en) | 2011-11-16 |
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|---|---|---|---|
| CN2011101790884A Pending CN102242346A (en) | 2011-06-29 | 2011-06-29 | Device and process for growing TiAlN film on surface of aluminum alloy in situ |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102677010A (en) * | 2012-05-23 | 2012-09-19 | 文晓斌 | Direct-current pulse device for magnetron-sputtering film-coating process |
| CN108570650A (en) * | 2018-06-04 | 2018-09-25 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of method that ion implanting prepares Cu doping AlN diluted semi-conductor thin-films |
| CN110042353A (en) * | 2019-04-04 | 2019-07-23 | 内蒙古科技大学 | A kind of nano-stack aluminum matrix composite and preparation method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1074715A (en) * | 1992-01-21 | 1993-07-28 | 大连理工大学 | The arc sowrce-multi-ion beam material surface modification tecbnique |
-
2011
- 2011-06-29 CN CN2011101790884A patent/CN102242346A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1074715A (en) * | 1992-01-21 | 1993-07-28 | 大连理工大学 | The arc sowrce-multi-ion beam material surface modification tecbnique |
Non-Patent Citations (1)
| Title |
|---|
| 黄晓辉 左秀荣: "氮流量对采用独立钛靶制备的(Ti，Al)N薄膜结构与性能的影响", 《真空科学与技术学报》, vol. 30, no. 4, 31 August 2010 (2010-08-31), pages 395 - 400 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102677010A (en) * | 2012-05-23 | 2012-09-19 | 文晓斌 | Direct-current pulse device for magnetron-sputtering film-coating process |
| CN108570650A (en) * | 2018-06-04 | 2018-09-25 | 中建材蚌埠玻璃工业设计研究院有限公司 | A kind of method that ion implanting prepares Cu doping AlN diluted semi-conductor thin-films |
| CN110042353A (en) * | 2019-04-04 | 2019-07-23 | 内蒙古科技大学 | A kind of nano-stack aluminum matrix composite and preparation method |
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Application publication date: 20111116 |