CN102235969A - Multi-channel filter array micro electro mechanical system (MEMS) spectrum type gas sensitive sensor - Google Patents
Multi-channel filter array micro electro mechanical system (MEMS) spectrum type gas sensitive sensor Download PDFInfo
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- CN102235969A CN102235969A CN 201010157527 CN201010157527A CN102235969A CN 102235969 A CN102235969 A CN 102235969A CN 201010157527 CN201010157527 CN 201010157527 CN 201010157527 A CN201010157527 A CN 201010157527A CN 102235969 A CN102235969 A CN 102235969A
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- 238000001228 spectrum Methods 0.000 title abstract description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
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- 239000004038 photonic crystal Substances 0.000 abstract description 5
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Abstract
The invention discloses a multi-channel filter array micro electro mechanical system (MEMS) spectrum type gas sensitive sensor. Category and concentration of a measured gas are determined by analyzing the infrared transmission spectrum of the gas to be measured. The sensor consists of a light source (1) manufactured on a silicon substrate, a gas chamber (2), a one-dimensional photonic crystal filter array (3) and an infrared light intensity detection array (4), wherein infrared light emitted by the light source (1) enters the gas chamber (2); after the infrared light is interacted with the gas to be measured, the infrared light is emitted through different filter channels of the one-dimensional photonic crystal filter array (3); light intensity signals emitted from the filter channels are converted into electrical signals on the corresponding different detection units of the infrared light intensity detection array (4) respectively and output, and the intensity of the signals output by the detection units at different positions reflects the absorption condition of the gas to be measured on the infrared light of different wavelengths; and the components of the gas can be judged and the concentration of the gas can be determined by measuring the transmission spectrum of the gas to be measured and comparing the transmission spectrum with the characteristics of a pre-stored map and by means of a chemometrics algorithm.
Description
Technical field
The present invention relates to the gas sensor technical field, relate in particular to a kind of multi-channel filter array MEMS spectroscopic gas sensor, this sensor in conjunction with chemometrics method, is determined the kind and the concentration of gas to be measured by detecting the infrared transmission spectrum of gas to be measured.The existing gas sensor selectivity of effective solution is low, the problem of anti-interference difference, and its making and standard CMOS process compatibility, is convenient to realize on the sheet integrated.
Background technology
Along with society is constantly progressive, gas sensor is more and more important in the application in fields such as pharmacy, medical science detection, food service industry, petrochemical industry, customs, colliery.The big power consumption height of traditional gas sensor volume, sensitivity is low and use inconvenience, is difficult to promote; The low power consumption of sensitive membrane class MEMS gas sensor volume is low, but often there is the difficulty that sensitivity and life-span be difficult to compromise in this type of sensor, and the gaseous species that can detect is subjected to the sensitive membrane effect of material performance.For more newfound materials, be difficult to find the functional material of high specificity.
Spectral analysis be a great development direction that effectively solves present gas sensor research and development field problems, but the big cost height of existing spectroscopic gas sensor volume is not easy to be extensive use of as chemico-analytic Last Resort.When obtaining spectrum, they utilize the raster scanning beam split mostly, or the resonant selecting frequency beam split, and the movable structure processing difficulties is difficult to realize microminiaturized.
Summary of the invention
(1) technical matters that will solve
Problems such as existing gas sensor sensitivity is low in order to solve, poor selectivity, processed complex, cost height, the invention provides a kind of multi-channel filter array MEMS gas sensor, with satisfy people for gaseous environment easily and fast, the requirement that accurately detects.
(2) technical scheme
For achieving the above object, the invention provides a kind of multi-channel filter array MEMS spectroscopic gas sensor, by analyzing the infrared transmission spectrum of gas to be measured, determine the kind and the concentration of the gas of surveying, this sensor is made of the light source 1, air chamber 2,1-D photon crystal filter array 3, the infrared light intensity detection arrays 4 that are produced on the silicon substrate, wherein, the infrared light that light source 1 sends enters air chamber 2, after interacting with gas to be measured, by the different filtering channel outgoing of 1-D photon crystal filter array 3; The light intensity signal of each filtering channel outgoing is separately converted to electric signal output on the different detection units of infrared light intensity detection arrays 4 correspondences, the signal intensity of the detecting unit output of diverse location has embodied the absorbing state of gas to be measured to the infrared light of different wave length, by measuring the transmission spectrum of gas to be measured, and with prestore the collection of illustrative plates feature relatively, by the Chemical Measurement algorithm, can judge gas componant and determine its concentration.
In the such scheme, described light source 1 is a heat radiation light source, is made of polysilicon resistance bridge and interconnection line and associated lead etc., electric work is converted into heat radiation, for sensor provides the wide range infrared energy.
In the such scheme, the gas passage of described air chamber 2 for etching on the silicon chip communicates with measurement environment.
In the such scheme, a series of deep trouths of described 1-D photon crystal filter array 3 for etching on the silicon chip.
In the such scheme, described 1-D photon crystal filter array 3 is formed by the narrow band filter parallel arranged at different wave length.
In the such scheme, the narrow band filter that described 1-D photon crystal filter array 3 is included forms the 1-D photon crystal cascade by two or more silicon grooves of arranging according to different cycles and constitutes.
In the such scheme, the silicon waveguide cascade by on silicon chip, etching between the silicon groove sequence of described different cycles.
In the such scheme, described narrow band filter input/output signal is by optical waveguide coupled.
In the such scheme, described infrared light intensity detection arrays 4 is the photodiode linear array, the infrared signal intensity of incident on it can be turned to electric signal output.
In the such scheme, detecting units different on the output terminal of the different filtering channels of described 1-D photon crystal filter array 3 and the described infrared light intensity detection arrays 4 is corresponding one by one.
(3) beneficial effect
As can be seen from the above technical solutions, the present invention has following beneficial effect:
(1) multi-channel filter array MEMS spectroscopic gas sensor provided by the invention, the detection means of spectral analysis is applied to the MEMS gas sensor, overcome shortcomings such as sensitive membrane class MEMS gas sensor poor selectivity, easily poisoning, dependence sensitive material, had advantages such as highly sensitive, that the life-span is long, usable range is wide.
(2) multi-channel filter array MEMS spectroscopic gas sensor provided by the invention, by many parallel arrowband bandpass filtering passages, the infrared light that penetrates gas to be measured is spatially launched, and the infrared signal sequence is converted to electrical signal sequence output by the infrared light intensity detection arrays of correspondence, utilize the infrared transmission spectrum of gas to determine the kind and the concentration thereof of gas.
(3) multi-channel filter array MEMS spectroscopic gas sensor provided by the invention, parameter adjustment is flexible, no movable structure, technology is simple, it is low effectively to improve existing micro spectral analysis device resolution, and problems such as analyst coverage is narrow, complex manufacturing technology, poor stability are easy to batch making.
(4) multi-channel filter array MEMS spectroscopic gas sensor provided by the invention, with the standard CMOS process compatibility, can be integrated with functional module monolithics such as signal Processing, data storage, data computation, realize on the intelligence micro sensing system on chip integrated.
Description of drawings
Fig. 1 is a multi-channel filter array MEMS spectroscopic gas sensor planar structure synoptic diagram provided by the invention;
Fig. 2 is a multi-channel filter array MEMS spectroscopic gas sensor 1-D photon crystal filter array structural representation provided by the invention;
Fig. 3 is a multi-channel filter array MEMS spectroscopic gas sensor filtering channel structural representation provided by the invention.
Among the figure, light source 1, air chamber 2,1-D photon crystal filter array 3, infrared light intensity detection arrays 4, photonic crystal filtering channel 301, coupled fiber 302, coupled waveguide 303, photonic crystal periodic sequence 304.
Embodiment
For making the purpose, technical solutions and advantages of the present invention clearer, be instantiation below in conjunction with methenyl choloride steam in the analysis environments gas, and with reference to accompanying drawing, the present invention is described in more detail.
As shown in Figure 1, Fig. 1 is a multi-channel filter array MEMS spectroscopic gas sensor planar structure synoptic diagram provided by the invention, this sensor is made of the light source 1, air chamber 2,1-D photon crystal filter array 3, the infrared light intensity detection arrays 4 that are produced on the silicon substrate, wherein, the infrared light that light source 1 sends enters air chamber 2, after interacting with gas to be measured, by the different filtering channel outgoing of 1-D photon crystal filter array 3; The light intensity signal of each filtering channel outgoing is separately converted to electric signal output on the different detection units of infrared light intensity detection arrays 4 correspondences, the signal intensity of the detecting unit output of diverse location has embodied the absorbing state of gas to be measured to the infrared light of different wave length, by measuring the transmission spectrum of gas to be measured, and with prestore the collection of illustrative plates feature relatively, by the Chemical Measurement algorithm, can judge gas componant and determine its concentration.
As shown in Figure 2,1-D photon crystal filter array 3 is made of a series of parallel photonic crystal narrow band filters of arranging.Each filtering channel allows the infrared band that passes through adjacent and do not repeat, and makes the wide range incident light by behind this filter array, according to different wavelength at space development.
As shown in Figure 3, filtering channel 301 is formed by two or more 1-D photon crystal wave filter cascades.Described 1-D photon crystal wave filter is made of the periodicity silicon groove sequence 304 that is produced on the silicon substrate, and the cycle of different wave filters changes according to its handled infrared light wavelength.Filtering channel by coupled fiber 302 in light path with other component interconnect, filter filtering is then by silicon waveguide 303 cascades step by step.
The a series of deep trouths of 1-D photon crystal filter array 3 for etching on the silicon chip are formed by the narrow band filter parallel arranged at different wave length.The narrow band filter that 1-D photon crystal filter array 3 is included, forming the 1-D photon crystal cascade by two or more silicon grooves of arranging according to different cycles constitutes, silicon waveguide cascade by etching on silicon chip between the silicon groove sequence of different cycles, the narrow band filter input/output signal is by optical waveguide coupled.Infrared light intensity detection arrays 4 is the photodiode linear array, the infrared signal intensity of incident on it can be turned to electric signal output.Detecting units different on the output terminal of the different filtering channels of 1-D photon crystal filter array 3 and the infrared light intensity detection arrays 4 is corresponding one by one.
After the infrared light that light source sends enters air chamber 2, interact with the gas to be measured in it, pass air chamber 2 after, enter the incident end of 1-D photon crystal filter array 3 different passages, emergent light imaging on each detecting unit of infrared detection array 4, and its intensity is converted into electric signal output.The measure field result who obtains and the calibration model that prestores are compared, can find with the corresponding wavelength of the characteristic peak of methenyl choloride be that tangible decay has taken place for the infrared light light intensity of 2374.7nm, 1861.9nm, 1695.8nm, 1412.4nm, 1152.9nm, and methenyl choloride concentration is high more, and above-mentioned characteristic wavelength infrared light damping capacity is big more.Detect the intensity of decay, just know the concentration of measuring methenyl choloride in the air chamber.
Above-described specific embodiment; purpose of the present invention, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. multi-channel filter array MEMS spectroscopic gas sensor, by analyzing the infrared transmission spectrum of gas to be measured, determine the kind and the concentration of the gas of surveying, it is characterized in that, this sensor is made of the light source (1), air chamber (2), 1-D photon crystal filter array (3), the infrared light intensity detection arrays (4) that are produced on the silicon substrate, wherein, the infrared light that light source (1) sends enters air chamber (2), after gas interaction to be measured, by the different filtering channel outgoing of 1-D photon crystal filter array (3); The light intensity signal of each filtering channel outgoing is separately converted to electric signal output on the corresponding different detection units of infrared light intensity detection arrays (4), the signal intensity of the detecting unit output of diverse location has embodied the absorbing state of gas to be measured to the infrared light of different wave length, by measuring the transmission spectrum of gas to be measured, and with prestore the collection of illustrative plates feature relatively, by the Chemical Measurement algorithm, can judge gas componant and determine its concentration.
2. multi-channel filter array MEMS spectroscopic gas sensor according to claim 1, it is characterized in that described light source (1) is a heat radiation light source, constitute by polysilicon resistance bridge and interconnection line and associated lead etc., electric work is converted into heat radiation, for sensor provides the wide range infrared energy.
3. multi-channel filter array MEMS spectroscopic gas sensor according to claim 1 is characterized in that, the gas passage of described air chamber (2) for etching on the silicon chip communicates with measurement environment.
4. multi-channel filter array MEMS spectroscopic gas sensor according to claim 1 is characterized in that, a series of deep trouths of described 1-D photon crystal filter array (3) for etching on the silicon chip.
5. multi-channel filter array MEMS spectroscopic gas sensor according to claim 4 is characterized in that described 1-D photon crystal filter array (3) is formed by the narrow band filter parallel arranged at different wave length.
6. multi-channel filter array MEMS spectroscopic gas sensor according to claim 5, it is characterized in that, the included narrow band filter of described 1-D photon crystal filter array (3) forms the 1-D photon crystal cascade by two or more silicon grooves of arranging according to different cycles and constitutes.
7. multi-channel filter array MEMS spectroscopic gas sensor according to claim 6 is characterized in that, the silicon waveguide cascade by etching on silicon chip between the silicon groove sequence of described different cycles.
8. multi-channel filter array MEMS spectroscopic gas sensor according to claim 5 is characterized in that, described narrow band filter input/output signal is by optical waveguide coupled.
9. multi-channel filter array MEMS spectroscopic gas sensor according to claim 1 is characterized in that described infrared light intensity detection arrays (4) is the photodiode linear array, the infrared signal intensity of incident on it can be turned to electric signal output.
10. multi-channel filter array MEMS spectroscopic gas sensor according to claim 1, it is characterized in that the output terminal of the different filtering channels of described 1-D photon crystal filter array (3) is corresponding one by one with the last different detecting unit of described infrared light intensity detection arrays (4).
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103575690A (en) * | 2013-11-05 | 2014-02-12 | 中国科学院微电子研究所 | Fruit maturity detection system based on infrared gas sensor |
| CN110398468A (en) * | 2019-06-14 | 2019-11-01 | 京东方科技集团股份有限公司 | Gas-detecting device |
| CN111257268A (en) * | 2020-03-23 | 2020-06-09 | 京东方科技集团股份有限公司 | Infrared filtering device, preparation method thereof and infrared gas sensor |
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| US20070200067A1 (en) * | 2006-02-27 | 2007-08-30 | Denso Corporation | Optical gas-detecting device |
| US20070279633A1 (en) * | 2003-12-12 | 2007-12-06 | Elt Inc. | Gas Sensor |
| CN101329291A (en) * | 2007-06-20 | 2008-12-24 | 中国科学院微电子研究所 | Gas-sensitive sensor |
| CN101470074A (en) * | 2007-12-26 | 2009-07-01 | 中国科学院微电子研究所 | MEMS spectrum gas-sensitive sensor |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20070279633A1 (en) * | 2003-12-12 | 2007-12-06 | Elt Inc. | Gas Sensor |
| US20070200067A1 (en) * | 2006-02-27 | 2007-08-30 | Denso Corporation | Optical gas-detecting device |
| CN101329291A (en) * | 2007-06-20 | 2008-12-24 | 中国科学院微电子研究所 | Gas-sensitive sensor |
| CN101470074A (en) * | 2007-12-26 | 2009-07-01 | 中国科学院微电子研究所 | MEMS spectrum gas-sensitive sensor |
Non-Patent Citations (1)
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| 《工矿自动化》 20100228 任晓力等 基于红外光学原理的便携式甲烷报警仪 7-10 1-10 , 第2期 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103575690A (en) * | 2013-11-05 | 2014-02-12 | 中国科学院微电子研究所 | Fruit maturity detection system based on infrared gas sensor |
| CN110398468A (en) * | 2019-06-14 | 2019-11-01 | 京东方科技集团股份有限公司 | Gas-detecting device |
| CN111257268A (en) * | 2020-03-23 | 2020-06-09 | 京东方科技集团股份有限公司 | Infrared filtering device, preparation method thereof and infrared gas sensor |
| CN111257268B (en) * | 2020-03-23 | 2023-11-28 | 京东方科技集团股份有限公司 | Infrared filter device, manufacturing method thereof and infrared gas sensor |
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Effective date of registration: 20180226 Address after: 100086 Beijing city Huairou District Yanqi Yanqi Economic Development Zone South four Street No. 25 Building No. 3 hospital No. 307 Patentee after: Beijing Zhongke Micro Intellectual Property Service Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |